auf Bestellung 194 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 50.21 EUR |
| 10+ | 44.60 EUR |
| 20+ | 44.58 EUR |
| 50+ | 44.56 EUR |
| 100+ | 38.98 EUR |
| 200+ | 35.39 EUR |
Produktrezensionen
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Technische Details IXFN94N50P2 IXYS
Description: MOSFET N-CH 500V 68A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 68A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V.
Weitere Produktangebote IXFN94N50P2 nach Preis ab 43.29 EUR bis 54.96 EUR
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IXFN94N50P2 | Hersteller : IXYS |
 Description: MOSFET N-CH 500V 68A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V Power Dissipation (Max): 780W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V |
auf Bestellung 322 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFN94N50P2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 68A 4-Pin SOT-227B |
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IXFN94N50P2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 68A 4-Pin SOT-227B |
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IXFN94N50P2 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A Polarisation: unipolar Drain-source voltage: 500V Drain current: 68A Pulsed drain current: 240A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 55mΩ Gate charge: 0.22µC Kind of channel: enhancement Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: HiPerFET™; Polar2™ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFN94N50P2 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A Polarisation: unipolar Drain-source voltage: 500V Drain current: 68A Pulsed drain current: 240A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 55mΩ Gate charge: 0.22µC Kind of channel: enhancement Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: HiPerFET™; Polar2™ |
Produkt ist nicht verfügbar |