| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXTA300N04T2-7 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 40V; 300A; 480W; TO263-7; 53ns Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 40V Drain current: 300A Power dissipation: 480W Case: TO263-7 On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 145nC Kind of channel: enhancement Reverse recovery time: 53ns Gate-source voltage: 20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXTK100N25P | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264 Type of transistor: N-MOSFET Drain-source voltage: 250V Drain current: 100A Power dissipation: 600W Case: TO264 Gate-source voltage: ±20V Mounting: THT Gate charge: 185nC Kind of channel: enhancement Polarisation: unipolar Technology: PolarHT™ Kind of package: tube On-state resistance: 27mΩ Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFA7N80P-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 800V; 7A; 200W; D2PAK,TO263; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™ Drain-source voltage: 800V Drain current: 7A Power dissipation: 200W Case: D2PAK; TO263 Gate-source voltage: 30V On-state resistance: 1.44Ω Mounting: SMD Kind of channel: enhancement Reverse recovery time: 250ns Gate charge: 32nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFP7N80PM | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 800V; 3.5A; 50W; TO220-3; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™ Drain-source voltage: 800V Drain current: 3.5A Power dissipation: 50W Case: TO220-3 Gate-source voltage: 30V On-state resistance: 1.44Ω Mounting: THT Kind of channel: enhancement Reverse recovery time: 250ns Gate charge: 32nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXKR47N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 278W Case: ISOPLUS247™ On-state resistance: 45mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 150nC Features of semiconductor devices: super junction coolmos |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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MCO150-12IO1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw Gate current: 150/200mA Max. forward voltage: 1.89V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 158A Kind of package: bulk Semiconductor structure: single thyristor Case: SOT227B |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CPC5602CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.13A Power dissipation: 2.5W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion |
auf Bestellung 107 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDI609CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -9...9A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 755 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDI609YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXDI609PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -9...9A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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XBB170 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: THT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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XBB170P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 248 Stücke: Lieferzeit 14-21 Tag (e) |
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XBB170S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 195 Stücke: Lieferzeit 14-21 Tag (e) |
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| XBB170PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| XBB170STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| IXSG110N65L2K | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; N; 650V; 111A; 600W; TOLL Type of transistor: N-MOSFET Technology: SiC Polarisation: N Drain-source voltage: 650V Drain current: 111A Power dissipation: 600W Case: TOLL Gate-source voltage: -5...20V On-state resistance: 25Ω Mounting: SMD Kind of channel: enhancement Gate charge: 125nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXFK360N15T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264 Case: TO264 Mounting: THT Power dissipation: 1.67kW Gate charge: 715nC Polarisation: unipolar Technology: GigaMOS™; HiPerFET™; TrenchT2™ Drain current: 360A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube On-state resistance: 4mΩ Reverse recovery time: 150ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| IXFH160N15T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; N; 150V; 160A; 830W; TO247-3; 90ns Case: TO247-3 Mounting: THT Power dissipation: 830W Gate charge: 160nC Polarisation: N Drain current: 160A Kind of channel: enhancement Drain-source voltage: 150V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 30V On-state resistance: 9.6mΩ Reverse recovery time: 90ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXFN360N15T2 | IXYS |
Category: Transistor modules Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A Case: SOT227B Pulsed drain current: 900A Type of semiconductor module: MOSFET transistor Power dissipation: 1.07kW Gate charge: 715nC Polarisation: unipolar Technology: GigaMOS™; HiPerFET™; TrenchT2™ Drain current: 310A Kind of channel: enhancement Drain-source voltage: 150V Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: ±30V Semiconductor structure: single transistor On-state resistance: 4mΩ Reverse recovery time: 150ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFX360N15T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns Case: PLUS247™ Mounting: THT Power dissipation: 1.67kW Gate charge: 715nC Polarisation: unipolar Technology: GigaMOS™; HiPerFET™; TrenchT2™ Drain current: 360A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube On-state resistance: 4mΩ Reverse recovery time: 150ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| IXTH160N15T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 150V; 160A; 830W; TO247-3; 115ns Case: TO247-3 Mounting: THT Power dissipation: 830W Gate charge: 160nC Drain current: 160A Kind of channel: enhancement Drain-source voltage: 150V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 30V On-state resistance: 9.6mΩ Reverse recovery time: 115ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| MMIX1H60N150V1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.5kV; SMPD; SMD; 32kA Type of thyristor: thyristor Max. off-state voltage: 1.5kV Case: SMPD Mounting: SMD Max. forward impulse current: 32kA Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| MMIX1F360N15T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A Case: SMPD Mounting: SMD Pulsed drain current: 900A Power dissipation: 680W Gate charge: 715nC Polarisation: unipolar Technology: GigaMOS™; HiPerFET™; TrenchT2™ Drain current: 235A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 4.4mΩ Reverse recovery time: 150ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| IXGT32N120A3-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 32A; 300W; TO268HV Case: TO268HV Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 1.2kV Power dissipation: 300W Gate charge: 89nC Pulsed collector current: 230A Type of transistor: IGBT Collector current: 32A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXGH32N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 1.2kV Power dissipation: 300W Gate charge: 89nC Technology: GenX3™; PT Pulsed collector current: 230A Type of transistor: IGBT Turn-on time: 239ns Turn-off time: 1.38µs Gate-emitter voltage: ±20V Collector current: 32A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXGT32N120A3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO268 Case: TO268 Mounting: SMD Kind of package: tube Collector-emitter voltage: 1.2kV Power dissipation: 300W Gate charge: 89nC Technology: GenX3™; PT Pulsed collector current: 230A Type of transistor: IGBT Turn-on time: 239ns Turn-off time: 1.38s Gate-emitter voltage: ±20V Collector current: 32A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTY44N10T-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; 100V; 44A; 130W; DPAK,TO252AA; 60ns Case: DPAK; TO252AA Mounting: SMD Power dissipation: 130W Gate charge: 33nC Technology: Trench Drain current: 44A Kind of channel: enhancement Drain-source voltage: 100V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 30V On-state resistance: 30mΩ Reverse recovery time: 60ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXFT50N30Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO268 Power dissipation: 690W Gate charge: 65nC Polarisation: unipolar Drain current: 50A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Kind of package: tube Case: TO268 On-state resistance: 80mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MMIX1F160N30T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 102A Pulsed drain current: 440A Power dissipation: 570W Case: SMPD Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of channel: enhancement Reverse recovery time: 200ns Gate charge: 367nC Technology: GigaMOS™; HiPerFET™; Trench™ |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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| MCC312-12io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 320Ax2; Ifmax: 520A; Y1-CU Case: Y1-CU Kind of package: bulk Max. forward impulse current: 8kA Gate current: 150/220mA Max. forward voltage: 1.32V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 320A x2 Max. load current: 520A Semiconductor structure: double series |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXXN340N65B4 | IXYS |
Category: IGBT modules Description: Module: IGBT; Ic: 520A; SOT227B; tube; screw Case: SOT227B Kind of package: tube Type of semiconductor module: IGBT Mechanical mounting: screw Pulsed collector current: 1.2kA Gate-emitter voltage: ±20V Collector current: 520A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXFX520N075T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 520A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 2.2mΩ Mounting: THT Gate charge: 545nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTP220N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 220A Power dissipation: 360W Case: TO220AB On-state resistance: 3.5mΩ Mounting: THT Gate charge: 112nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 45ns Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 267 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFX220N17T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 170V Drain current: 220A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 6.3mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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DJ6025LCTP | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 25A; TO220AB; tube Mounting: THT Max. off-state voltage: 0.6kV Load current: 25A Kind of package: tube Case: TO220AB Type of diode: rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| IX4341UE | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side; MSOP8; 5A; Ch: 2; MOSFET; 4.5÷18V Case: MSOP8 Mounting: SMD Output current: 5A Type of integrated circuit: driver Kind of output: inverting Operating temperature: -40...125°C Integrated circuit features: MOSFET Pulse fall time: 7ns Kind of integrated circuit: low-side Number of channels: 2 Impulse rise time: 7ns Supply voltage: 4.5...18V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| IX4341UETR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side; MSOP8; 5A; Ch: 2; MOSFET; 4.5÷18V Case: MSOP8 Mounting: SMD Output current: 5A Type of integrated circuit: driver Kind of output: inverting Operating temperature: -40...125°C Integrated circuit features: MOSFET Pulse fall time: 7ns Kind of integrated circuit: low-side Number of channels: 2 Impulse rise time: 7ns Supply voltage: 4.5...18V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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DSA1-16D | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 2.3A; Ifsm: 110A; FP-Case; tube Type of diode: rectifying Max. off-state voltage: 1.6kV Load current: 2.3A Semiconductor structure: single diode Case: FP-Case Mounting: THT Max. forward voltage: 1.34V Max. forward impulse current: 110A Features of semiconductor devices: avalanche breakdown effect Kind of package: tube |
auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
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DAA200X1800NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B; 200A Max. off-state voltage: 1.8kV Load current: 100A x2 Semiconductor structure: double independent Case: SOT227B Max. forward voltage: 1.21V Max. load current: 200A Max. forward impulse current: 1.5kA Features of semiconductor devices: avalanche breakdown effect Kind of package: tube Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP20N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 36W; TO220FP; 350ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 36W Case: TO220FP On-state resistance: 0.185Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.35µs Gate charge: 27nC Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTH420N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 420A Power dissipation: 935W Case: TO247-3 On-state resistance: 2mΩ Mounting: THT Gate charge: 315nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 74ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CPC1150NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 1ms Turn-off time: 2ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| CPC2330NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Max. operating current: 120mA Mounting: SMT Operating temperature: -40...85°C Body dimensions: 9.35x3.81x2.18mm Switched voltage: max. 350V AC; max. 350V DC Contacts configuration: SPST-NO + SPST-NC Type of relay: solid state Manufacturer series: OptoMOS Relay variant: 1-phase; current source Insulation voltage: 1.5kV Turn-on time: 3ms Case: SO8 Turn-off time: 3ms Control current max.: 50mA On-state resistance: 30Ω |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| CPC1330GRTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Max. operating current: 120mA Mounting: SMT Operating temperature: -40...85°C Body dimensions: 4.57x6.35x3.3mm Switched voltage: max. 350V AC; max. 350V DC Contacts configuration: SPST-NO Type of relay: solid state Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Insulation voltage: 5kV Turn-on time: 2ms Case: DIP4 Turn-off time: 1ms Control current max.: 50mA On-state resistance: 30Ω |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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CPC1786J | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 800mA; max.1kVDC; THT; i4-pac; OptoMOS; 2Ω Mounting: THT Turn-off time: 5ms Control current max.: 100mA On-state resistance: 2Ω Type of relay: solid state Manufacturer series: OptoMOS Relay variant: current source Kind of output: MOSFET Body dimensions: 19.91x20.88x5.03mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 20ms Switched voltage: max. 1kV DC Case: i4-pac Max. operating current: 0.8A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTY08N50D2-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 500V; 800mA; 60W; DPAK; 400ns; module Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 500V Drain current: 0.8A Power dissipation: 60W Case: DPAK Gate-source voltage: 20V On-state resistance: 4.6Ω Mounting: SMD Gate charge: 12.7nC Kind of channel: enhancement Reverse recovery time: 400ns Version: module |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MDD142-16N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V Max. forward impulse current: 4kA Max. forward voltage: 1.05V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: screw Load current: 165A Max. load current: 300A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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DSS60-0045B | IXYS |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 60A; TO247-2; Ufmax: 0.57V Mounting: THT Max. forward voltage: 0.57V Power dissipation: 155W Max. off-state voltage: 45V Load current: 60A Kind of package: tube Semiconductor structure: single diode Case: TO247-2 Type of diode: Schottky rectifying Max. forward impulse current: 0.6kA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXYH8N250CHV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO247HV Case: TO247HV Mounting: THT Power dissipation: 280W Gate charge: 45nC Technology: XPT™ Features of semiconductor devices: high voltage Pulsed collector current: 70A Type of transistor: IGBT Turn-on time: 24ns Kind of package: tube Turn-off time: 328ns Gate-emitter voltage: ±20V Collector current: 8A Collector-emitter voltage: 2.5kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXYA8N250CHV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO263 Case: TO263 Mounting: SMD Power dissipation: 280W Gate charge: 45nC Technology: XPT™ Features of semiconductor devices: high voltage Pulsed collector current: 70A Type of transistor: IGBT Turn-on time: 24ns Kind of package: tube Turn-off time: 328ns Gate-emitter voltage: ±20V Collector current: 8A Collector-emitter voltage: 2.5kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| IXYH8N250C | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 29A; 280W; TO247-3 Case: TO247-3 Mounting: THT Power dissipation: 280W Gate charge: 45nC Technology: XPT™ Features of semiconductor devices: high voltage Pulsed collector current: 32A Type of transistor: IGBT Turn-on time: 12ns Kind of package: tube Turn-off time: 180ns Gate-emitter voltage: ±20V Collector current: 29A Collector-emitter voltage: 2.5kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXYH8N250CV1HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO247HV Case: TO247HV Mounting: THT Power dissipation: 280W Gate charge: 45nC Technology: XPT™ Features of semiconductor devices: high voltage Pulsed collector current: 70A Type of transistor: IGBT Turn-on time: 24ns Kind of package: tube Turn-off time: 328ns Gate-emitter voltage: ±20V Collector current: 8A Collector-emitter voltage: 2.5kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| IXTH58N25L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 250V; 58A; 540W; TO247-3; 400ns Case: TO247-3 Mounting: THT Power dissipation: 540W Drain current: 58A Drain-source voltage: 250V Type of transistor: N-MOSFET Gate-source voltage: 20V On-state resistance: 64mΩ Reverse recovery time: 400ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXFP34N65X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 446W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Pulsed drain current: 48A Gate charge: 29nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTA34N65X2-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; 650V; 34A; 540W; D2PAK,TO263; 390ns Type of transistor: N-MOSFET Technology: X2-Class Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: D2PAK; TO263 Gate-source voltage: 30V On-state resistance: 96mΩ Mounting: SMD Kind of channel: enhancement Reverse recovery time: 390ns Gate charge: 54nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTT34N65X2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO268HV On-state resistance: 96mΩ Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Gate charge: 54nC Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXXK110N65B4H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 880W Case: TO264 Mounting: THT Kind of package: tube Turn-off time: 250ns Gate-emitter voltage: ±20V Collector current: 110A Collector-emitter voltage: 650V Gate charge: 183nC Pulsed collector current: 570A Turn-on time: 65ns |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYP10N65C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 160W Case: TO220-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 10A Collector-emitter voltage: 650V Gate charge: 18nC Pulsed collector current: 54A Turn-on time: 44ns Turn-off time: 128ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXXN110N65B4H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B Technology: GenX4™; XPT™ Power dissipation: 750W Case: SOT227B Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 110A Type of semiconductor module: IGBT Mechanical mounting: screw Pulsed collector current: 650A Max. off-state voltage: 650V Electrical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXXN110N65C4H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B Technology: GenX3™; XPT™ Power dissipation: 750W Case: SOT227B Gate-emitter voltage: ±20V Collector current: 110A Type of semiconductor module: IGBT Mechanical mounting: screw Pulsed collector current: 470A Max. off-state voltage: 650V Electrical mounting: screw Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTA300N04T2-7 |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 300A; 480W; TO263-7; 53ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 145nC
Kind of channel: enhancement
Reverse recovery time: 53ns
Gate-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 300A; 480W; TO263-7; 53ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 145nC
Kind of channel: enhancement
Reverse recovery time: 53ns
Gate-source voltage: 20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTK100N25P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Type of transistor: N-MOSFET
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 600W
Case: TO264
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 185nC
Kind of channel: enhancement
Polarisation: unipolar
Technology: PolarHT™
Kind of package: tube
On-state resistance: 27mΩ
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Type of transistor: N-MOSFET
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 600W
Case: TO264
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 185nC
Kind of channel: enhancement
Polarisation: unipolar
Technology: PolarHT™
Kind of package: tube
On-state resistance: 27mΩ
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFA7N80P-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 800V; 7A; 200W; D2PAK,TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 1.44Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 800V; 7A; 200W; D2PAK,TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 1.44Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFP7N80PM |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 800V; 3.5A; 50W; TO220-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 800V
Drain current: 3.5A
Power dissipation: 50W
Case: TO220-3
Gate-source voltage: 30V
On-state resistance: 1.44Ω
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 800V; 3.5A; 50W; TO220-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 800V
Drain current: 3.5A
Power dissipation: 50W
Case: TO220-3
Gate-source voltage: 30V
On-state resistance: 1.44Ω
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 32nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXKR47N60C5 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Features of semiconductor devices: super junction coolmos
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 31.73 EUR |
| MCO150-12IO1 |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Gate current: 150/200mA
Max. forward voltage: 1.89V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 158A
Kind of package: bulk
Semiconductor structure: single thyristor
Case: SOT227B
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Gate current: 150/200mA
Max. forward voltage: 1.89V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 158A
Kind of package: bulk
Semiconductor structure: single thyristor
Case: SOT227B
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPC5602CTR |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 3.06 EUR |
| 47+ | 1.83 EUR |
| 100+ | 1.3 EUR |
| IXDI609CI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 755 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 4.52 EUR |
| 25+ | 3.4 EUR |
| 50+ | 3.3 EUR |
| IXDI609YI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXDI609PI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| XBB170 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 13.07 EUR |
| 10+ | 11.4 EUR |
| 250+ | 9.6 EUR |
| XBB170P |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 18.79 EUR |
| 50+ | 12.3 EUR |
| XBB170S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 18.79 EUR |
| 50+ | 12.3 EUR |
| XBB170PTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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| XBB170STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| IXSG110N65L2K |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 111A; 600W; TOLL
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 111A
Power dissipation: 600W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 25Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 125nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 111A; 600W; TOLL
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 111A
Power dissipation: 600W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 25Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 125nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| IXFK360N15T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Power dissipation: 1.67kW
Gate charge: 715nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 360A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 4mΩ
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Power dissipation: 1.67kW
Gate charge: 715nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 360A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 4mΩ
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH160N15T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 150V; 160A; 830W; TO247-3; 90ns
Case: TO247-3
Mounting: THT
Power dissipation: 830W
Gate charge: 160nC
Polarisation: N
Drain current: 160A
Kind of channel: enhancement
Drain-source voltage: 150V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 30V
On-state resistance: 9.6mΩ
Reverse recovery time: 90ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 150V; 160A; 830W; TO247-3; 90ns
Case: TO247-3
Mounting: THT
Power dissipation: 830W
Gate charge: 160nC
Polarisation: N
Drain current: 160A
Kind of channel: enhancement
Drain-source voltage: 150V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 30V
On-state resistance: 9.6mΩ
Reverse recovery time: 90ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXFN360N15T2 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Case: SOT227B
Pulsed drain current: 900A
Type of semiconductor module: MOSFET transistor
Power dissipation: 1.07kW
Gate charge: 715nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 310A
Kind of channel: enhancement
Drain-source voltage: 150V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±30V
Semiconductor structure: single transistor
On-state resistance: 4mΩ
Reverse recovery time: 150ns
Category: Transistor modules
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Case: SOT227B
Pulsed drain current: 900A
Type of semiconductor module: MOSFET transistor
Power dissipation: 1.07kW
Gate charge: 715nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 310A
Kind of channel: enhancement
Drain-source voltage: 150V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±30V
Semiconductor structure: single transistor
On-state resistance: 4mΩ
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXFX360N15T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Case: PLUS247™
Mounting: THT
Power dissipation: 1.67kW
Gate charge: 715nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 360A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 4mΩ
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Case: PLUS247™
Mounting: THT
Power dissipation: 1.67kW
Gate charge: 715nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 360A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 4mΩ
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH160N15T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 150V; 160A; 830W; TO247-3; 115ns
Case: TO247-3
Mounting: THT
Power dissipation: 830W
Gate charge: 160nC
Drain current: 160A
Kind of channel: enhancement
Drain-source voltage: 150V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 30V
On-state resistance: 9.6mΩ
Reverse recovery time: 115ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 150V; 160A; 830W; TO247-3; 115ns
Case: TO247-3
Mounting: THT
Power dissipation: 830W
Gate charge: 160nC
Drain current: 160A
Kind of channel: enhancement
Drain-source voltage: 150V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 30V
On-state resistance: 9.6mΩ
Reverse recovery time: 115ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| MMIX1H60N150V1 |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMIX1F360N15T2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 680W
Gate charge: 715nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 235A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Reverse recovery time: 150ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 680W
Gate charge: 715nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 235A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGT32N120A3-TRL |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 32A; 300W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 89nC
Pulsed collector current: 230A
Type of transistor: IGBT
Collector current: 32A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 32A; 300W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 89nC
Pulsed collector current: 230A
Type of transistor: IGBT
Collector current: 32A
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
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| IXGH32N120A3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 89nC
Technology: GenX3™; PT
Pulsed collector current: 230A
Type of transistor: IGBT
Turn-on time: 239ns
Turn-off time: 1.38µs
Gate-emitter voltage: ±20V
Collector current: 32A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 89nC
Technology: GenX3™; PT
Pulsed collector current: 230A
Type of transistor: IGBT
Turn-on time: 239ns
Turn-off time: 1.38µs
Gate-emitter voltage: ±20V
Collector current: 32A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGT32N120A3 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 89nC
Technology: GenX3™; PT
Pulsed collector current: 230A
Type of transistor: IGBT
Turn-on time: 239ns
Turn-off time: 1.38s
Gate-emitter voltage: ±20V
Collector current: 32A
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 89nC
Technology: GenX3™; PT
Pulsed collector current: 230A
Type of transistor: IGBT
Turn-on time: 239ns
Turn-off time: 1.38s
Gate-emitter voltage: ±20V
Collector current: 32A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTY44N10T-TRL |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 44A; 130W; DPAK,TO252AA; 60ns
Case: DPAK; TO252AA
Mounting: SMD
Power dissipation: 130W
Gate charge: 33nC
Technology: Trench
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 30V
On-state resistance: 30mΩ
Reverse recovery time: 60ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 44A; 130W; DPAK,TO252AA; 60ns
Case: DPAK; TO252AA
Mounting: SMD
Power dissipation: 130W
Gate charge: 33nC
Technology: Trench
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 30V
On-state resistance: 30mΩ
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IXFT50N30Q3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO268
Power dissipation: 690W
Gate charge: 65nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268
On-state resistance: 80mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO268
Power dissipation: 690W
Gate charge: 65nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268
On-state resistance: 80mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMIX1F160N30T |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Pulsed drain current: 440A
Power dissipation: 570W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate charge: 367nC
Technology: GigaMOS™; HiPerFET™; Trench™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Pulsed drain current: 440A
Power dissipation: 570W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate charge: 367nC
Technology: GigaMOS™; HiPerFET™; Trench™
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 64.8 EUR |
| 3+ | 57.31 EUR |
| 10+ | 51.46 EUR |
| 20+ | 48.05 EUR |
| MCC312-12io1 |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320Ax2; Ifmax: 520A; Y1-CU
Case: Y1-CU
Kind of package: bulk
Max. forward impulse current: 8kA
Gate current: 150/220mA
Max. forward voltage: 1.32V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 320A x2
Max. load current: 520A
Semiconductor structure: double series
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320Ax2; Ifmax: 520A; Y1-CU
Case: Y1-CU
Kind of package: bulk
Max. forward impulse current: 8kA
Gate current: 150/220mA
Max. forward voltage: 1.32V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 320A x2
Max. load current: 520A
Semiconductor structure: double series
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 249.33 EUR |
| IXXN340N65B4 |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; Ic: 520A; SOT227B; tube; screw
Case: SOT227B
Kind of package: tube
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 1.2kA
Gate-emitter voltage: ±20V
Collector current: 520A
Category: IGBT modules
Description: Module: IGBT; Ic: 520A; SOT227B; tube; screw
Case: SOT227B
Kind of package: tube
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 1.2kA
Gate-emitter voltage: ±20V
Collector current: 520A
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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Stück im Wert von UAH
| IXFX520N075T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP220N04T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 6.02 EUR |
| 25+ | 3.44 EUR |
| IXFX220N17T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.66 EUR |
| 6+ | 15.72 EUR |
| 10+ | 14.24 EUR |
| DJ6025LCTP |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; TO220AB; tube
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 25A
Kind of package: tube
Case: TO220AB
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; TO220AB; tube
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 25A
Kind of package: tube
Case: TO220AB
Type of diode: rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IX4341UE |
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; MSOP8; 5A; Ch: 2; MOSFET; 4.5÷18V
Case: MSOP8
Mounting: SMD
Output current: 5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 7ns
Kind of integrated circuit: low-side
Number of channels: 2
Impulse rise time: 7ns
Supply voltage: 4.5...18V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; MSOP8; 5A; Ch: 2; MOSFET; 4.5÷18V
Case: MSOP8
Mounting: SMD
Output current: 5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 7ns
Kind of integrated circuit: low-side
Number of channels: 2
Impulse rise time: 7ns
Supply voltage: 4.5...18V
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| IX4341UETR |
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; MSOP8; 5A; Ch: 2; MOSFET; 4.5÷18V
Case: MSOP8
Mounting: SMD
Output current: 5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 7ns
Kind of integrated circuit: low-side
Number of channels: 2
Impulse rise time: 7ns
Supply voltage: 4.5...18V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; MSOP8; 5A; Ch: 2; MOSFET; 4.5÷18V
Case: MSOP8
Mounting: SMD
Output current: 5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 7ns
Kind of integrated circuit: low-side
Number of channels: 2
Impulse rise time: 7ns
Supply voltage: 4.5...18V
Produkt ist nicht verfügbar
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| DSA1-16D |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 2.3A; Ifsm: 110A; FP-Case; tube
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Load current: 2.3A
Semiconductor structure: single diode
Case: FP-Case
Mounting: THT
Max. forward voltage: 1.34V
Max. forward impulse current: 110A
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 2.3A; Ifsm: 110A; FP-Case; tube
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Load current: 2.3A
Semiconductor structure: single diode
Case: FP-Case
Mounting: THT
Max. forward voltage: 1.34V
Max. forward impulse current: 110A
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 9.23 EUR |
| 12+ | 7.64 EUR |
| 13+ | 6.97 EUR |
| 50+ | 5.69 EUR |
| 100+ | 5.33 EUR |
| DAA200X1800NA |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B; 200A
Max. off-state voltage: 1.8kV
Load current: 100A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.21V
Max. load current: 200A
Max. forward impulse current: 1.5kA
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B; 200A
Max. off-state voltage: 1.8kV
Load current: 100A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.21V
Max. load current: 200A
Max. forward impulse current: 1.5kA
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 50.47 EUR |
| 3+ | 48.83 EUR |
| 10+ | 45.52 EUR |
| 30+ | 44.33 EUR |
| IXTP20N65X2M |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 36W; TO220FP; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.35µs
Gate charge: 27nC
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 36W; TO220FP; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.35µs
Gate charge: 27nC
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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| IXTH420N04T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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| CPC1150NTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| CPC2330NTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Max. operating current: 120mA
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Switched voltage: max. 350V AC; max. 350V DC
Contacts configuration: SPST-NO + SPST-NC
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Turn-on time: 3ms
Case: SO8
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 30Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Max. operating current: 120mA
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Switched voltage: max. 350V AC; max. 350V DC
Contacts configuration: SPST-NO + SPST-NC
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Turn-on time: 3ms
Case: SO8
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 30Ω
Produkt ist nicht verfügbar
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| CPC1330GRTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Max. operating current: 120mA
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Switched voltage: max. 350V AC; max. 350V DC
Contacts configuration: SPST-NO
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Insulation voltage: 5kV
Turn-on time: 2ms
Case: DIP4
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 30Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Max. operating current: 120mA
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Switched voltage: max. 350V AC; max. 350V DC
Contacts configuration: SPST-NO
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Insulation voltage: 5kV
Turn-on time: 2ms
Case: DIP4
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 30Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| CPC1786J |
|
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 800mA; max.1kVDC; THT; i4-pac; OptoMOS; 2Ω
Mounting: THT
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 2Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 1kV DC
Case: i4-pac
Max. operating current: 0.8A
Category: DC Solid State Relays
Description: Relay: solid state; 800mA; max.1kVDC; THT; i4-pac; OptoMOS; 2Ω
Mounting: THT
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 2Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 1kV DC
Case: i4-pac
Max. operating current: 0.8A
Produkt ist nicht verfügbar
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| IXTY08N50D2-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 800mA; 60W; DPAK; 400ns; module
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 12.7nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Version: module
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 800mA; 60W; DPAK; 400ns; module
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 12.7nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Version: module
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| MDD142-16N1 |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Max. forward impulse current: 4kA
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 165A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Max. forward impulse current: 4kA
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 165A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Produkt ist nicht verfügbar
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| DSS60-0045B |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 60A; TO247-2; Ufmax: 0.57V
Mounting: THT
Max. forward voltage: 0.57V
Power dissipation: 155W
Max. off-state voltage: 45V
Load current: 60A
Kind of package: tube
Semiconductor structure: single diode
Case: TO247-2
Type of diode: Schottky rectifying
Max. forward impulse current: 0.6kA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 60A; TO247-2; Ufmax: 0.57V
Mounting: THT
Max. forward voltage: 0.57V
Power dissipation: 155W
Max. off-state voltage: 45V
Load current: 60A
Kind of package: tube
Semiconductor structure: single diode
Case: TO247-2
Type of diode: Schottky rectifying
Max. forward impulse current: 0.6kA
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXYH8N250CHV |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO247HV
Case: TO247HV
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 24ns
Kind of package: tube
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 2.5kV
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO247HV
Case: TO247HV
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 24ns
Kind of package: tube
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 2.5kV
Produkt ist nicht verfügbar
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| IXYA8N250CHV |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO263
Case: TO263
Mounting: SMD
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 24ns
Kind of package: tube
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 2.5kV
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO263
Case: TO263
Mounting: SMD
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 24ns
Kind of package: tube
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 2.5kV
Produkt ist nicht verfügbar
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| IXYH8N250C |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 29A; 280W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 32A
Type of transistor: IGBT
Turn-on time: 12ns
Kind of package: tube
Turn-off time: 180ns
Gate-emitter voltage: ±20V
Collector current: 29A
Collector-emitter voltage: 2.5kV
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 29A; 280W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 32A
Type of transistor: IGBT
Turn-on time: 12ns
Kind of package: tube
Turn-off time: 180ns
Gate-emitter voltage: ±20V
Collector current: 29A
Collector-emitter voltage: 2.5kV
Produkt ist nicht verfügbar
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| IXYH8N250CV1HV |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO247HV
Case: TO247HV
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 24ns
Kind of package: tube
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 2.5kV
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO247HV
Case: TO247HV
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 24ns
Kind of package: tube
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Collector current: 8A
Collector-emitter voltage: 2.5kV
Produkt ist nicht verfügbar
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| IXTH58N25L2 |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 250V; 58A; 540W; TO247-3; 400ns
Case: TO247-3
Mounting: THT
Power dissipation: 540W
Drain current: 58A
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
On-state resistance: 64mΩ
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 250V; 58A; 540W; TO247-3; 400ns
Case: TO247-3
Mounting: THT
Power dissipation: 540W
Drain current: 58A
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
On-state resistance: 64mΩ
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXFP34N65X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Pulsed drain current: 48A
Gate charge: 29nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Pulsed drain current: 48A
Gate charge: 29nC
Produkt ist nicht verfügbar
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| IXTA34N65X2-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; 650V; 34A; 540W; D2PAK,TO263; 390ns
Type of transistor: N-MOSFET
Technology: X2-Class
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 96mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; 650V; 34A; 540W; D2PAK,TO263; 390ns
Type of transistor: N-MOSFET
Technology: X2-Class
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 96mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXTT34N65X2HV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXXK110N65B4H1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: TO264
Mounting: THT
Kind of package: tube
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 110A
Collector-emitter voltage: 650V
Gate charge: 183nC
Pulsed collector current: 570A
Turn-on time: 65ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: TO264
Mounting: THT
Kind of package: tube
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 110A
Collector-emitter voltage: 650V
Gate charge: 183nC
Pulsed collector current: 570A
Turn-on time: 65ns
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 31.57 EUR |
| 5+ | 29.93 EUR |
| 10+ | 27.39 EUR |
| 25+ | 24.15 EUR |
| 50+ | 22.31 EUR |
| IXYP10N65C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 650V
Gate charge: 18nC
Pulsed collector current: 54A
Turn-on time: 44ns
Turn-off time: 128ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 650V
Gate charge: 18nC
Pulsed collector current: 54A
Turn-on time: 44ns
Turn-off time: 128ns
Produkt ist nicht verfügbar
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| IXXN110N65B4H1 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Power dissipation: 750W
Case: SOT227B
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 650A
Max. off-state voltage: 650V
Electrical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Power dissipation: 750W
Case: SOT227B
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 650A
Max. off-state voltage: 650V
Electrical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXXN110N65C4H1 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 110A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 470A
Max. off-state voltage: 650V
Electrical mounting: screw
Semiconductor structure: single transistor
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 110A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 470A
Max. off-state voltage: 650V
Electrical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH