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MMIX1H60N150V1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF049A4BE1158BF&compId=MMIX1H60N150V1.pdf?ci_sign=2ae92bab7b597b60581a48f40ba8030aeacc3a55 Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
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MMIX1F360N15T2 IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4.4mΩ
Drain current: 235A
Power dissipation: 680W
Drain-source voltage: 150V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
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CPC1025N CPC1025N IXYS CPC1025N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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VBE26-12NO7 VBE26-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8780D7329C2D40C4&compId=VBE26-12NO7.pdf?ci_sign=7cf9369ddc2ee331fe38db0bf5b3fc5f0b9d17cd Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 32A; Ifsm: 75A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 75A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
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VBO54-16NO7 VBO54-16NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FF25AA44FB60C4&compId=VBO54-16NO7.pdf?ci_sign=7f734f131e6f9d9a207efe1716b6539285ad3357 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 55A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
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CLA16E1200PN CLA16E1200PN IXYS CLA16E1200PN.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50mA
Load current: 10A
Max. load current: 16A
Max. forward impulse current: 195A
Max. off-state voltage: 1.2kV
Case: TO220FP
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IXTP140N055T2 IXTP140N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1323820&compId=IXTP140N055T2.pdf?ci_sign=4fde222e64865f76b52f5a21b6005238850dbe91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 140A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
Features of semiconductor devices: thrench gate power mosfet
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IXTT440N055T2 IXTT440N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5661D46317820&compId=IXTH(T)440N055T2.pdf?ci_sign=5f4942b500a3c0ddae739b2aec9961823a876808 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO268; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO268
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
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IXTH440N055T2 IXTH440N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5661D46317820&compId=IXTH(T)440N055T2.pdf?ci_sign=5f4942b500a3c0ddae739b2aec9961823a876808 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP110N055T2 IXTP110N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A327B8DD935820&compId=IXTA(P)110N055T2.pdf?ci_sign=95ba3ca6ece76e436480df8f9f361f529bc19588 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
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24+3.07 EUR
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IXTA80N10T IXTA80N10T IXYS IXTA(P)80N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
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IXTP180N10T IXTP180N10T IXYS IXTA(P)180N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
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IXTP01N100D IXTP01N100D IXYS IXTP(Y)01N100D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 80Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 2ns
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IXXH30N65B4 IXXH30N65B4 IXYS IXXH30N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
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IXXH30N65C4D1 IXXH30N65C4D1 IXYS IXXH30N65C4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 161ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 136A
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IXYP30N65C3 IXYP30N65C3 IXYS IXYH(P)30N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXXH30N65B4D1 IXXH30N65B4D1 IXYS IXXH30N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
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IXYH30N65C3 IXYH30N65C3 IXYS IXYH(P)30N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Gate charge: 44nC
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXYH30N65C3H1 IXYH30N65C3H1 IXYS IXY_30N65C3H1_HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXYT30N65C3H1HV IXYS IXY_30N65C3H1_HV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXTP36P15P IXTP36P15P IXYS IXT_36P15P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Gate charge: 55nC
Reverse recovery time: 228ns
On-state resistance: 0.11Ω
Power dissipation: 300W
Gate-source voltage: ±20V
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IXTR36P15P IXTR36P15P IXYS IXTR36P15P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -22A; 150W; 150ns
Case: ISOPLUS247™
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -22A
Gate charge: 55nC
Reverse recovery time: 150ns
On-state resistance: 0.12Ω
Power dissipation: 150W
Gate-source voltage: ±20V
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IXTA36P15P IXTA36P15P IXYS IXT_36P15P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
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IXTH36P15P IXTH36P15P IXYS IXT_36P15P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
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IXTQ36P15P IXTQ36P15P IXYS IXT_36P15P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
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IXFH26N50P3 IXFH26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar3™
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IXFH26N50P IXFH26N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F4D820&compId=IXFH26N50P.pdf?ci_sign=d5eff1cf7d858618cda3bc4dde50d0892b2bdfa0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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IXTQ26N50P IXTQ26N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC6476E5667820&compId=IXTQ(T%2CV)26N50P_S.pdf?ci_sign=05792dbff65769b8475857717b66702fd485dd9b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
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IXFA26N50P3 IXFA26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
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IXFQ26N50P3 IXFQ26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO3P
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
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IXFJ26N50P3 IXFJ26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BAB693B12D7660C4&compId=IXFJ26N50P3.pdf?ci_sign=5ef1ecd6bc543a0395eb4820b9ef6d4f9818ecfb Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 180W
Case: ISO247™
On-state resistance: 0.295Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Pulsed drain current: 78A
Technology: HiPerFET™; Polar3™
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IXTT26N50P IXTT26N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC6476E5667820&compId=IXTQ(T%2CV)26N50P_S.pdf?ci_sign=05792dbff65769b8475857717b66702fd485dd9b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
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IXFQ28N60P3 IXFQ28N60P3 IXYS IXFH(Q)28N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
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LAA100 LAA100 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 250 Stücke:
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LAA100L LAA100L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892080C7&compId=LAA100L.pdf?ci_sign=133833099cee8dee4dfa302627eb4b749f2b8824 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 250 Stücke:
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15+5 EUR
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LAA100S LAA100S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
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DSEI60-02A DSEI60-02A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD571E80678D8BF&compId=DSEI60-02A.pdf?ci_sign=a0fb9e8e737a89169c2b9a3753e0abe4ec11b12a description Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 69A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 0.88V
Power dissipation: 150W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 252 Stücke:
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11+7.06 EUR
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MCMA140PD1200TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B4CE2C84A0C4&compId=MCMA140PD1200TB.pdf?ci_sign=012f7d812458ee72f1d124319d295e2f227a1db6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Mechanical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.28V
Threshold on-voltage: 0.85V
Load current: 140A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.2kV
Max. load current: 220A
Kind of package: bulk
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IXFK420N10T IXFK420N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA57BFF6D4A18BF&compId=IXFK420N10T_IXFX420N10T.pdf?ci_sign=f703b8f2c268b8e9ba07cd2c3e4e8ce0b331312c Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Reverse recovery time: 140ns
Gate charge: 670nC
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Kind of channel: enhancement
Case: TO264
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
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CPC1014NTR CPC1014NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A752E0C7&compId=CPC1014N.pdf?ci_sign=a4c02ddb082d95fd63da7394eecc1088ee03122f Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1025NTR CPC1025NTR IXYS CPC1025N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXA30RG1200DHGLB IXA30RG1200DHGLB IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA759B209DC6143&compId=IXA30RG1200DHGLB.pdf?ci_sign=f6eb0238051d648061ebca520c13ec7c26cb22f3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA7B6B514524143&compId=SMPD%20MOSFET%20and%20IGBTs_Product%20Brief.pdf?ci_sign=8939cb3b27982fb8078171d673d8402b08fb3dc3 Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Technology: ISOPLUS™; Sonic FRD™
Power dissipation: 147W
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IXFB300N10P IXFB300N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED46E259E172A18&compId=IXFB300N10P.pdf?ci_sign=9dc76b5f08d73e0cf6cbcdad5881837d048e6e99 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 279nC
Reverse recovery time: 200ns
On-state resistance: 5.5mΩ
Drain current: 300A
Gate-source voltage: ±20V
Power dissipation: 1.5kW
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Case: PLUS264™
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CLA60PD1200NA CLA60PD1200NA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89188AC1A1F8BF&compId=CLA60PD1200NA.pdf?ci_sign=8a1d155a6a91fc089fa0a68417874f3c7352585e Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Kind of package: bulk
Case: SOT227B
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 40/80mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.09V
Load current: 60A
Max. load current: 94A
Max. forward impulse current: 935A
Max. off-state voltage: 1.2kV
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CLA110MB1200NA CLA110MB1200NA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF14CC06F2398BF&compId=CLA110MB1200NA.pdf?ci_sign=8ff423e678d1d339a3ca9cfba184e03ee39f4269 Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Kind of package: bulk
Semiconductor structure: opposing
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Type of semiconductor module: thyristor
Gate current: 40/80mA
Max. forward voltage: 1.04V
Load current: 50A
Max. forward impulse current: 935A
Max. off-state voltage: 1.2kV
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IXGN200N60B3 IXGN200N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3ABB94C6CA26FE1EC&compId=ixgn200n60b3.pdf?ci_sign=d01a746c4ff41454ca16c191f704bec2cc169241 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mechanical mounting: screw
Technology: GenX3™; PT
Power dissipation: 830W
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DPF240X200NA DPF240X200NA IXYS DPF240X200NA.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Max. forward voltage: 1.06V
Max. load current: 120A
Load current: 120A x2
Max. off-state voltage: 200V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Semiconductor structure: double independent
Type of semiconductor module: diode
auf Bestellung 56 Stücke:
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2+50.84 EUR
3+45.3 EUR
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CS45-12IO1 CS45-12IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C90DA181DE27&compId=CS45-08IO1-DTE.pdf?ci_sign=370091429d5995645cf0ec659bab53cef7de1ae0 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 45A
Case: TO247AD
Mounting: THT
Max. load current: 71A
Max. forward impulse current: 520A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
auf Bestellung 297 Stücke:
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14+5.16 EUR
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IXTX102N65X2 IXTX102N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A30509622B9820&compId=IXTK(X)102N65X2.pdf?ci_sign=179728ba4b6154ce0a3f464c48ebd958f7ec0bd6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
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IXTP48P05T IXTP48P05T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
auf Bestellung 295 Stücke:
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15+4.78 EUR
20+3.68 EUR
50+3.12 EUR
100+3.02 EUR
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IXTP44N10T IXTP44N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Reverse recovery time: 60ns
On-state resistance: 30mΩ
Power dissipation: 130W
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39+1.84 EUR
52+1.4 EUR
100+1.26 EUR
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IXTY44N10T IXTY44N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Reverse recovery time: 60ns
On-state resistance: 30mΩ
Power dissipation: 130W
auf Bestellung 288 Stücke:
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26+2.85 EUR
29+2.47 EUR
36+2 EUR
70+1.73 EUR
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IXTY48P05T IXTY48P05T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
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IXTA48P05T IXTA48P05T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
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IXTK120P20T IXTK120P20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EA563468D18BF&compId=IXT_120P20T.pdf?ci_sign=b303308099e4550f537d8d87d7d46f104218dd25 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Case: PLUS264™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Produkt ist nicht verfügbar
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IXTK102N65X2 IXTK102N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A30509622B9820&compId=IXTK(X)102N65X2.pdf?ci_sign=179728ba4b6154ce0a3f464c48ebd958f7ec0bd6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Case: TO264
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
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IXTN120P20T IXTN120P20T IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794A7765FE1E748&compId=IXTN120P20T.pdf?ci_sign=424025f9bccd2160baf20cb9a4a14aba3d44a2f2 Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: TrenchP™
Polarisation: unipolar
Pulsed drain current: -400A
Drain-source voltage: -200V
Drain current: -106A
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 830W
Produkt ist nicht verfügbar
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IXTN102N65X2 IXTN102N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9E6330B4C1820&compId=IXTN102N65X2.pdf?ci_sign=9e7b58dfb51537d8509f57c064d3549be58d17de Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: X2-Class
Polarisation: unipolar
Pulsed drain current: 204A
Drain-source voltage: 650V
Drain current: 76A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Gate-source voltage: ±40V
Power dissipation: 595W
Produkt ist nicht verfügbar
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DAA200X1800NA DAA200X1800NA IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA995824A0EA360C7&compId=DAA200X1800NA.pdf?ci_sign=db1937538aeee57eb4a8511896da8a8361264e03 Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Max. forward voltage: 1.21V
Load current: 100A x2
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.8kV
Features of semiconductor devices: avalanche breakdown effect
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
2+42.41 EUR
3+41.03 EUR
10+38.25 EUR
30+37.25 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CLA15E1200NPZ-TUB CLA15E1200NPZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5B432A891E0C4&compId=CLA15E1200NPZ.pdf?ci_sign=2ea2a8fa3bab3e7257fd2545af159cb17839baac Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 20/40mA; TO263ABHV; SMD; tube
Mounting: SMD
Type of thyristor: thyristor
Case: TO263ABHV
Kind of package: tube
Features of semiconductor devices: two gate polarities
Gate current: 20/40mA
Load current: 15A
Max. load current: 33A
Max. forward impulse current: 0.145kA
Max. off-state voltage: 1.2kV
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.53 EUR
32+2.27 EUR
36+2.02 EUR
50+1.83 EUR
Mindestbestellmenge: 29
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MMIX1H60N150V1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF049A4BE1158BF&compId=MMIX1H60N150V1.pdf?ci_sign=2ae92bab7b597b60581a48f40ba8030aeacc3a55
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Produkt ist nicht verfügbar
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MMIX1F360N15T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4.4mΩ
Drain current: 235A
Power dissipation: 680W
Drain-source voltage: 150V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Produkt ist nicht verfügbar
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CPC1025N CPC1025N.pdf
CPC1025N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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VBE26-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8780D7329C2D40C4&compId=VBE26-12NO7.pdf?ci_sign=7cf9369ddc2ee331fe38db0bf5b3fc5f0b9d17cd
VBE26-12NO7
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 32A; Ifsm: 75A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 75A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.82 EUR
10+16.27 EUR
Mindestbestellmenge: 4
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VBO54-16NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FF25AA44FB60C4&compId=VBO54-16NO7.pdf?ci_sign=7f734f131e6f9d9a207efe1716b6539285ad3357
VBO54-16NO7
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 55A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.68 EUR
5+17.16 EUR
10+15.56 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
CLA16E1200PN CLA16E1200PN.pdf
CLA16E1200PN
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50mA
Load current: 10A
Max. load current: 16A
Max. forward impulse current: 195A
Max. off-state voltage: 1.2kV
Case: TO220FP
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.03 EUR
33+2.22 EUR
50+2.03 EUR
100+1.96 EUR
Mindestbestellmenge: 18
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IXTP140N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1323820&compId=IXTP140N055T2.pdf?ci_sign=4fde222e64865f76b52f5a21b6005238850dbe91
IXTP140N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 140A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTT440N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5661D46317820&compId=IXTH(T)440N055T2.pdf?ci_sign=5f4942b500a3c0ddae739b2aec9961823a876808
IXTT440N055T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO268; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO268
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH440N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5661D46317820&compId=IXTH(T)440N055T2.pdf?ci_sign=5f4942b500a3c0ddae739b2aec9961823a876808
IXTH440N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTP110N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A327B8DD935820&compId=IXTA(P)110N055T2.pdf?ci_sign=95ba3ca6ece76e436480df8f9f361f529bc19588
IXTP110N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.42 EUR
24+3.07 EUR
30+2.42 EUR
50+2.06 EUR
Mindestbestellmenge: 21
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IXTA80N10T IXTA(P)80N10T.pdf
IXTA80N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
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IXTP180N10T IXTA(P)180N10T.pdf
IXTP180N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
Produkt ist nicht verfügbar
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IXTP01N100D IXTP(Y)01N100D.pdf
IXTP01N100D
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 80Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 2ns
auf Bestellung 319 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.57 EUR
11+7.05 EUR
25+5.63 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXXH30N65B4 IXXH30N65B4.pdf
IXXH30N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
Produkt ist nicht verfügbar
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IXXH30N65C4D1 IXXH30N65C4D1.pdf
IXXH30N65C4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 161ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 136A
Produkt ist nicht verfügbar
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IXYP30N65C3 IXYH(P)30N65C3.pdf
IXYP30N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Produkt ist nicht verfügbar
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IXXH30N65B4D1 IXXH30N65B4D1.pdf
IXXH30N65B4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
Produkt ist nicht verfügbar
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IXYH30N65C3 IXYH(P)30N65C3.pdf
IXYH30N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Gate charge: 44nC
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Produkt ist nicht verfügbar
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IXYH30N65C3H1 IXY_30N65C3H1_HV.pdf
IXYH30N65C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Produkt ist nicht verfügbar
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IXYT30N65C3H1HV IXY_30N65C3H1_HV.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Produkt ist nicht verfügbar
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IXTP36P15P IXT_36P15P.pdf
IXTP36P15P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Gate charge: 55nC
Reverse recovery time: 228ns
On-state resistance: 0.11Ω
Power dissipation: 300W
Gate-source voltage: ±20V
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.12 EUR
15+4.92 EUR
50+4.83 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXTR36P15P IXTR36P15P.pdf
IXTR36P15P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -22A; 150W; 150ns
Case: ISOPLUS247™
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -22A
Gate charge: 55nC
Reverse recovery time: 150ns
On-state resistance: 0.12Ω
Power dissipation: 150W
Gate-source voltage: ±20V
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.14 EUR
12+6.31 EUR
13+5.66 EUR
30+5.29 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXTA36P15P IXT_36P15P.pdf
IXTA36P15P
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
Produkt ist nicht verfügbar
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IXTH36P15P IXT_36P15P.pdf
IXTH36P15P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
Produkt ist nicht verfügbar
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IXTQ36P15P IXT_36P15P.pdf
IXTQ36P15P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
Produkt ist nicht verfügbar
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IXFH26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFH26N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar3™
auf Bestellung 406 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.31 EUR
11+6.99 EUR
12+6.31 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFH26N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F4D820&compId=IXFH26N50P.pdf?ci_sign=d5eff1cf7d858618cda3bc4dde50d0892b2bdfa0
IXFH26N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.64 EUR
12+6.31 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ26N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC6476E5667820&compId=IXTQ(T%2CV)26N50P_S.pdf?ci_sign=05792dbff65769b8475857717b66702fd485dd9b
IXTQ26N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
auf Bestellung 211 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.29 EUR
11+6.71 EUR
13+5.82 EUR
30+5.75 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXFA26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFA26N50P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.26 EUR
Mindestbestellmenge: 32
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IXFQ26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFQ26N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO3P
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFJ26N50P3 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BAB693B12D7660C4&compId=IXFJ26N50P3.pdf?ci_sign=5ef1ecd6bc543a0395eb4820b9ef6d4f9818ecfb
IXFJ26N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 180W
Case: ISO247™
On-state resistance: 0.295Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Pulsed drain current: 78A
Technology: HiPerFET™; Polar3™
Produkt ist nicht verfügbar
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IXTT26N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC6476E5667820&compId=IXTQ(T%2CV)26N50P_S.pdf?ci_sign=05792dbff65769b8475857717b66702fd485dd9b
IXTT26N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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IXFQ28N60P3 IXFH(Q)28N60P3.pdf
IXFQ28N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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LAA100 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58
LAA100
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.13 EUR
14+5.36 EUR
250+4.33 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
LAA100L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892080C7&compId=LAA100L.pdf?ci_sign=133833099cee8dee4dfa302627eb4b749f2b8824
LAA100L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5 EUR
50+4.3 EUR
Mindestbestellmenge: 15
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LAA100S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58
LAA100S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.22 EUR
50+5.39 EUR
Mindestbestellmenge: 9
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DSEI60-02A description pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD571E80678D8BF&compId=DSEI60-02A.pdf?ci_sign=a0fb9e8e737a89169c2b9a3753e0abe4ec11b12a
DSEI60-02A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 69A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 0.88V
Power dissipation: 150W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 252 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.44 EUR
11+7.06 EUR
12+6.13 EUR
30+5.65 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
MCMA140PD1200TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B4CE2C84A0C4&compId=MCMA140PD1200TB.pdf?ci_sign=012f7d812458ee72f1d124319d295e2f227a1db6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Mechanical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.28V
Threshold on-voltage: 0.85V
Load current: 140A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.2kV
Max. load current: 220A
Kind of package: bulk
Produkt ist nicht verfügbar
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IXFK420N10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA57BFF6D4A18BF&compId=IXFK420N10T_IXFX420N10T.pdf?ci_sign=f703b8f2c268b8e9ba07cd2c3e4e8ce0b331312c
IXFK420N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Reverse recovery time: 140ns
Gate charge: 670nC
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Kind of channel: enhancement
Case: TO264
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.16 EUR
5+17.17 EUR
Mindestbestellmenge: 4
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CPC1014NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A752E0C7&compId=CPC1014N.pdf?ci_sign=a4c02ddb082d95fd63da7394eecc1088ee03122f
CPC1014NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1025NTR CPC1025N.pdf
CPC1025NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXA30RG1200DHGLB pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA759B209DC6143&compId=IXA30RG1200DHGLB.pdf?ci_sign=f6eb0238051d648061ebca520c13ec7c26cb22f3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA7B6B514524143&compId=SMPD%20MOSFET%20and%20IGBTs_Product%20Brief.pdf?ci_sign=8939cb3b27982fb8078171d673d8402b08fb3dc3
IXA30RG1200DHGLB
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Technology: ISOPLUS™; Sonic FRD™
Power dissipation: 147W
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.64 EUR
Mindestbestellmenge: 10
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IXFB300N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED46E259E172A18&compId=IXFB300N10P.pdf?ci_sign=9dc76b5f08d73e0cf6cbcdad5881837d048e6e99
IXFB300N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 279nC
Reverse recovery time: 200ns
On-state resistance: 5.5mΩ
Drain current: 300A
Gate-source voltage: ±20V
Power dissipation: 1.5kW
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Case: PLUS264™
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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CLA60PD1200NA pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89188AC1A1F8BF&compId=CLA60PD1200NA.pdf?ci_sign=8a1d155a6a91fc089fa0a68417874f3c7352585e
CLA60PD1200NA
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Kind of package: bulk
Case: SOT227B
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 40/80mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.09V
Load current: 60A
Max. load current: 94A
Max. forward impulse current: 935A
Max. off-state voltage: 1.2kV
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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CLA110MB1200NA pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF14CC06F2398BF&compId=CLA110MB1200NA.pdf?ci_sign=8ff423e678d1d339a3ca9cfba184e03ee39f4269
CLA110MB1200NA
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Kind of package: bulk
Semiconductor structure: opposing
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Type of semiconductor module: thyristor
Gate current: 40/80mA
Max. forward voltage: 1.04V
Load current: 50A
Max. forward impulse current: 935A
Max. off-state voltage: 1.2kV
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+26.4 EUR
5+24.17 EUR
Mindestbestellmenge: 3
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IXGN200N60B3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED3ABB94C6CA26FE1EC&compId=ixgn200n60b3.pdf?ci_sign=d01a746c4ff41454ca16c191f704bec2cc169241
IXGN200N60B3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mechanical mounting: screw
Technology: GenX3™; PT
Power dissipation: 830W
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+61.78 EUR
3+56.54 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DPF240X200NA DPF240X200NA.pdf
DPF240X200NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Max. forward voltage: 1.06V
Max. load current: 120A
Load current: 120A x2
Max. off-state voltage: 200V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Semiconductor structure: double independent
Type of semiconductor module: diode
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+50.84 EUR
3+45.3 EUR
9+44.66 EUR
Mindestbestellmenge: 2
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CS45-12IO1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C90DA181DE27&compId=CS45-08IO1-DTE.pdf?ci_sign=370091429d5995645cf0ec659bab53cef7de1ae0
CS45-12IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 45A
Case: TO247AD
Mounting: THT
Max. load current: 71A
Max. forward impulse current: 520A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.45 EUR
13+5.85 EUR
14+5.16 EUR
30+4.75 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXTX102N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A30509622B9820&compId=IXTK(X)102N65X2.pdf?ci_sign=179728ba4b6154ce0a3f464c48ebd958f7ec0bd6
IXTX102N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP48P05T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14
IXTP48P05T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.78 EUR
20+3.68 EUR
50+3.12 EUR
100+3.02 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IXTP44N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a
IXTP44N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Reverse recovery time: 60ns
On-state resistance: 30mΩ
Power dissipation: 130W
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.37 EUR
39+1.84 EUR
52+1.4 EUR
100+1.26 EUR
Mindestbestellmenge: 31
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IXTY44N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a
IXTY44N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Reverse recovery time: 60ns
On-state resistance: 30mΩ
Power dissipation: 130W
auf Bestellung 288 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
29+2.47 EUR
36+2 EUR
70+1.73 EUR
Mindestbestellmenge: 26
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IXTY48P05T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14
IXTY48P05T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
Produkt ist nicht verfügbar
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IXTA48P05T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14
IXTA48P05T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
Produkt ist nicht verfügbar
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IXTK120P20T pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EA563468D18BF&compId=IXT_120P20T.pdf?ci_sign=b303308099e4550f537d8d87d7d46f104218dd25
IXTK120P20T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Case: PLUS264™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Produkt ist nicht verfügbar
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IXTK102N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A30509622B9820&compId=IXTK(X)102N65X2.pdf?ci_sign=179728ba4b6154ce0a3f464c48ebd958f7ec0bd6
IXTK102N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Case: TO264
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
Produkt ist nicht verfügbar
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IXTN120P20T pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794A7765FE1E748&compId=IXTN120P20T.pdf?ci_sign=424025f9bccd2160baf20cb9a4a14aba3d44a2f2
IXTN120P20T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: TrenchP™
Polarisation: unipolar
Pulsed drain current: -400A
Drain-source voltage: -200V
Drain current: -106A
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 830W
Produkt ist nicht verfügbar
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IXTN102N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9E6330B4C1820&compId=IXTN102N65X2.pdf?ci_sign=9e7b58dfb51537d8509f57c064d3549be58d17de
IXTN102N65X2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: X2-Class
Polarisation: unipolar
Pulsed drain current: 204A
Drain-source voltage: 650V
Drain current: 76A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Gate-source voltage: ±40V
Power dissipation: 595W
Produkt ist nicht verfügbar
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DAA200X1800NA pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA995824A0EA360C7&compId=DAA200X1800NA.pdf?ci_sign=db1937538aeee57eb4a8511896da8a8361264e03
DAA200X1800NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Max. forward voltage: 1.21V
Load current: 100A x2
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.8kV
Features of semiconductor devices: avalanche breakdown effect
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.41 EUR
3+41.03 EUR
10+38.25 EUR
30+37.25 EUR
Mindestbestellmenge: 2
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CLA15E1200NPZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5B432A891E0C4&compId=CLA15E1200NPZ.pdf?ci_sign=2ea2a8fa3bab3e7257fd2545af159cb17839baac
CLA15E1200NPZ-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 20/40mA; TO263ABHV; SMD; tube
Mounting: SMD
Type of thyristor: thyristor
Case: TO263ABHV
Kind of package: tube
Features of semiconductor devices: two gate polarities
Gate current: 20/40mA
Load current: 15A
Max. load current: 33A
Max. forward impulse current: 0.145kA
Max. off-state voltage: 1.2kV
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.53 EUR
32+2.27 EUR
36+2.02 EUR
50+1.83 EUR
Mindestbestellmenge: 29
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