| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| MCNA150P2200YA | IXYS |
 Category: Thyristor modulesDescription: Module: thyristor; double series; 2.2kV; 150A; Y4-M6; Ufmax: 1.51V Gate current: 150/200mA Max. forward voltage: 1.51V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 150A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCNA180P2200YA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 180A; Y4-M6; Ufmax: 1.51V Gate current: 150/200mA Max. forward voltage: 1.51V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 180A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCNA220P2200YA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 220A; Y4-M6; Ufmax: 1.53V Gate current: 150/200mA Max. forward voltage: 1.53V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 220A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCNA40P2200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 40A; TO240AA; Ufmax: 1.74V Gate current: 70/150mA Max. forward voltage: 1.74V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 40A Kind of package: bulk Semiconductor structure: double series Case: TO240AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCNA650P2200CA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 650A; ComPack; screw Gate current: 300/400mA Max. forward voltage: 1.59V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 650A Kind of package: bulk Semiconductor structure: double series Case: ComPack |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCNA75P2200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 75A; TO240AA; Ufmax: 1.58V Gate current: 95/200mA Max. forward voltage: 1.58V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 75A Kind of package: bulk Semiconductor structure: double series Case: TO240AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCNA95P2200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 95A; TO240AA; Ufmax: 1.63V Gate current: 150/200mA Max. forward voltage: 1.63V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 95A Kind of package: bulk Semiconductor structure: double series Case: TO240AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MDNA140P2200TG | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 140A; TO240AA; Ufmax: 1.11V Max. forward impulse current: 2.8kA Max. forward voltage: 1.11V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 140A Kind of package: bulk Semiconductor structure: double series Case: TO240AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MDNA380P2200KC | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V Max. forward impulse current: 11kA Max. forward voltage: 0.93V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 380A Kind of package: bulk Semiconductor structure: double series Case: Y1-CU |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IXTA380N036T4-7-TR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 36V; 380A; 480W; TO263-7; 54ns Type of transistor: N-MOSFET Drain-source voltage: 36V Drain current: 380A Power dissipation: 480W Case: TO263-7 Gate-source voltage: 15V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhancement Reverse recovery time: 54ns Gate charge: 260nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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CPC1706Y | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω Mounting: THT Control current max.: 50mA On-state resistance: 90mΩ Type of relay: solid state Manufacturer series: OptoMOS Relay variant: current source Kind of output: MOSFET Body dimensions: 21.08x10.16x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 5ms Switched voltage: max. 60V DC Case: SOP4 Max. operating current: 4A Turn-off time: 2ms |
auf Bestellung 724 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXFZ140N25T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 100A Power dissipation: 445W Case: DE475 On-state resistance: 17mΩ Mounting: SMD Gate charge: 255nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IXGH16N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 11A Power dissipation: 190W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 35ns Turn-off time: 298ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DSEI2X101-12A | IXYS |
 Category: Diode modulesDescription: Module: diode; double independent; 1.2kV; If: 91Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 91A x2 Case: SOT227B Max. forward voltage: 1.87V Max. forward impulse current: 970A Electrical mounting: screw Max. load current: 182A Mechanical mounting: screw Kind of package: tube |
auf Bestellung 64 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXYA55N65B5 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 55A; 395W; D2PAK Type of transistor: IGBT Power dissipation: 395W Case: D2PAK Mounting: SMD Gate charge: 130nC Kind of package: tube Collector current: 55A Collector-emitter voltage: 650V Pulsed collector current: 250A Turn-off time: 200ns Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFH34N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 34A Case: TO247-3 On-state resistance: 0.18Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 695W Gate charge: 60nC |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFX64N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 830W Case: PLUS247™ On-state resistance: 85mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 184 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN64N50P | IXYS |
Category: Transistor modules Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A Polarisation: unipolar Drain-source voltage: 500V Drain current: 50A Pulsed drain current: 150A Power dissipation: 625W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 85mΩ Gate charge: 150nC Kind of channel: enhancement Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 200ns Type of semiconductor module: MOSFET transistor Technology: HiPerFET™; Polar™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN94N50P2 | IXYS |
Category: Transistor modules Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A Polarisation: unipolar Drain-source voltage: 500V Drain current: 68A Pulsed drain current: 240A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 55mΩ Gate charge: 0.22µC Kind of channel: enhancement Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 250ns Type of semiconductor module: MOSFET transistor Technology: HiPerFET™; Polar2™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK94N50P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 94A Power dissipation: 1.3kW Case: TO264 On-state resistance: 55mΩ Mounting: THT Gate charge: 228nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFR44N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 24A Power dissipation: 208W Case: ISOPLUS247™ On-state resistance: 0.15Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK64N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 830W Case: TO264 On-state resistance: 85mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK64N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 1kW Case: TO264 On-state resistance: 85mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFX94N50P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 94A Power dissipation: 1.3kW Case: PLUS247™ Gate-source voltage: ±30V On-state resistance: 55mΩ Mounting: THT Gate charge: 228nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns Technology: HiPerFET™; Polar2™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH44N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 830W Case: TO247-3 On-state resistance: 0.14Ω Mounting: THT Gate charge: 93nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK44N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 650W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns Technology: HiPerFET™; Polar™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFR64N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 37A; 300W; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 37A Power dissipation: 300W Case: ISOPLUS247™ Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns Technology: HiPerFET™; PolarHV™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFX64N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 1kW Case: PLUS247™ On-state resistance: 85mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFX74N50P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 74A Power dissipation: 1.4kW Case: PLUS247™ On-state resistance: 77mΩ Mounting: THT Gate charge: 165nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTQ44N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 650W Case: TO3P On-state resistance: 0.14Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFQ34N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 34A Power dissipation: 695W Case: TO3P On-state resistance: 0.18Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFR64N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 500W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 45A Power dissipation: 500W Case: ISOPLUS247™ On-state resistance: 94mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFT44N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 650W Case: TO268 On-state resistance: 0.14Ω Mounting: SMD Gate charge: 98nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFT44N50Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 830W Case: TO268 On-state resistance: 0.14Ω Mounting: SMD Gate charge: 93nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFP20N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 500V; 20A; 380W; TO220-3; 250ns Type of transistor: N-MOSFET Drain-source voltage: 500V Drain current: 20A Power dissipation: 380W Case: TO220-3 Gate-source voltage: 30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 36nC Kind of channel: enhancement Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DSA120X200LB-TUB | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; tube; 185W Case: SMPD Mounting: SMD Max. forward impulse current: 700A Max. forward voltage: 0.67V Power dissipation: 185W Max. off-state voltage: 200V Load current: 65A x2 Kind of package: tube Semiconductor structure: double independent Type of diode: Schottky rectifying |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXYH20N65C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 230W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 105A Turn-on time: 51ns Turn-off time: 132ns Gate charge: 30nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DSSK60-015A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; TO247-3; Ufmax: 0.69V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 0.69V Max. forward impulse current: 0.6kA Power dissipation: 190W Kind of package: tube |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IX4428MTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2 Case: DFN8 Mounting: SMD Number of channels: 2 Supply voltage: 4.5...30V Output current: -1.5...1.5A Type of integrated circuit: driver Kind of output: inverting; non-inverting Operating temperature: -40...125°C Kind of package: reel; tape Kind of integrated circuit: low-side; MOSFET gate driver |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MUBW25-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A Collector current: 21A Power dissipation: 100W Case: E1-Pack Technology: NPT Mechanical mounting: screw Pulsed collector current: 40A Application: motors Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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DSS40-0008D | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 8V; 40A; TO247-3; Ufmax: 0.23V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 8V Load current: 40A Semiconductor structure: single diode Max. forward voltage: 0.23V Max. forward impulse current: 0.6kA Kind of package: tube Power dissipation: 155W Case: TO247-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DSA20C100PN | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.71V Mounting: THT Case: TO220FP Max. off-state voltage: 0.1kV Load current: 10A x2 Kind of package: tube Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Max. forward impulse current: 0.24kA Max. forward voltage: 0.71V Power dissipation: 35W |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DSA20C45PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220AB; Ufmax: 0.61V Mounting: THT Max. forward impulse current: 260A Max. forward voltage: 0.61V Power dissipation: 45W Max. off-state voltage: 45V Heatsink thickness: 1.14...1.39mm Load current: 10A x2 Kind of package: tube Semiconductor structure: common cathode; double Case: TO220AB Type of diode: Schottky rectifying |
auf Bestellung 312 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MIXA60HU1200VA | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W Technology: Sonic FRD™; XPT™ Power dissipation: 290W Case: V1-A-Pack Gate-emitter voltage: ±20V Collector current: 60A Topology: boost chopper; buck chopper; H-bridge Type of semiconductor module: IGBT Mechanical mounting: screw Pulsed collector current: 150A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors Semiconductor structure: diode/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IXTH26N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 460W Case: TO247-3 On-state resistance: 0.27Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs Features of semiconductor devices: standard power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFT26N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 460W Case: TO268 On-state resistance: 0.27Ω Mounting: SMD Gate charge: 72nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTQ26N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 460W Case: TO3P On-state resistance: 0.27Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs Features of semiconductor devices: standard power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTT26N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 460W Case: TO268 On-state resistance: 0.27Ω Mounting: SMD Gate charge: 72nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs Features of semiconductor devices: standard power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP36P15P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB Reverse recovery time: 228ns Mounting: THT Power dissipation: 300W Gate charge: 55nC Polarisation: unipolar Technology: PolarP™ Drain current: -36A Kind of channel: enhancement Drain-source voltage: -150V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB On-state resistance: 0.11Ω |
auf Bestellung 183 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP36N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO220AB Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 36A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns |
auf Bestellung 194 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXSA40N120L2-7TR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 30A; 250W; D2PAK-7 Type of transistor: N-MOSFET Technology: SiC Polarisation: N Drain-source voltage: 1.2kV Drain current: 30A Power dissipation: 250W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 53nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IXSH40N120L2KHV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 40A; 250W; TO247-4; 28.6ns Type of transistor: N-MOSFET Technology: SiC Polarisation: N Drain-source voltage: 1.2kV Drain current: 40A Power dissipation: 250W Case: TO247-4 Gate-source voltage: -5...20V On-state resistance: 80mΩ Mounting: THT Gate charge: 53nC Kind of channel: enhancement Reverse recovery time: 28.6ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXTY4N65X2-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; 650V; 4A; 80W; DPAK,TO252AA; 160ns Type of transistor: N-MOSFET Drain-source voltage: 650V Drain current: 4A Case: DPAK; TO252AA Gate-source voltage: 30V On-state resistance: 0.85Ω Mounting: SMD Kind of channel: enhancement Reverse recovery time: 160ns Power dissipation: 80W Gate charge: 8.3nC Technology: X2-Class |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXFH34N65X2W | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; N; 650V; 34A; 540W; TO247-3; 180ns Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 650V Drain current: 34A Case: TO247-3 Gate-source voltage: 30V On-state resistance: 0.1Ω Mounting: THT Kind of channel: enhancement Reverse recovery time: 180ns Power dissipation: 540W Gate charge: 64nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IXTN500N20X4 | IXYS |
Category: Transistor modules Description: Module; 200V; 500A; SOT227B; 1.15kW; 250ns; screw Type of semiconductor module: MOSFET transistor Drain-source voltage: 200V Drain current: 500A Case: SOT227B On-state resistance: 1.99mΩ Power dissipation: 1.15kW Reverse recovery time: 250ns Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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|
DSP25-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 25A; Ifsm: 300A; TO247-3; tube; 160W Max. off-state voltage: 1.2kV Load current: 25A Kind of package: tube Semiconductor structure: double series Case: TO247-3 Type of diode: rectifying Mounting: THT Max. forward impulse current: 0.3kA Max. forward voltage: 1.16V Power dissipation: 160W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MKI50-06A7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 50A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 0.6kV Collector current: 50A Case: E2-Pack Application: for UPS; motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 225W Technology: NPT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
CPC3730CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89 Power dissipation: 1.4W Polarisation: unipolar Drain current: 0.14A Kind of channel: depletion Drain-source voltage: 350V Type of transistor: N-MOSFET Gate-source voltage: ±15V Kind of package: reel; tape Case: SOT89 On-state resistance: 35Ω Mounting: SMD |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DPF10I600APA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; TO220AC; tube Type of diode: rectifying Case: TO220AC Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA80N075L2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 357W Case: TO263 On-state resistance: 24mΩ Mounting: SMD Gate charge: 103nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 160ns |
auf Bestellung 259 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MCNA150P2200YA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 150A; Y4-M6; Ufmax: 1.51V
Gate current: 150/200mA
Max. forward voltage: 1.51V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 150A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 150A; Y4-M6; Ufmax: 1.51V
Gate current: 150/200mA
Max. forward voltage: 1.51V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 150A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCNA180P2200YA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 180A; Y4-M6; Ufmax: 1.51V
Gate current: 150/200mA
Max. forward voltage: 1.51V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 180A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 180A; Y4-M6; Ufmax: 1.51V
Gate current: 150/200mA
Max. forward voltage: 1.51V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 180A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCNA220P2200YA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 220A; Y4-M6; Ufmax: 1.53V
Gate current: 150/200mA
Max. forward voltage: 1.53V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 220A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 220A; Y4-M6; Ufmax: 1.53V
Gate current: 150/200mA
Max. forward voltage: 1.53V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 220A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCNA40P2200TA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 40A; TO240AA; Ufmax: 1.74V
Gate current: 70/150mA
Max. forward voltage: 1.74V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 40A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 40A; TO240AA; Ufmax: 1.74V
Gate current: 70/150mA
Max. forward voltage: 1.74V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 40A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCNA650P2200CA |
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 650A; ComPack; screw
Gate current: 300/400mA
Max. forward voltage: 1.59V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 650A
Kind of package: bulk
Semiconductor structure: double series
Case: ComPack
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 650A; ComPack; screw
Gate current: 300/400mA
Max. forward voltage: 1.59V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 650A
Kind of package: bulk
Semiconductor structure: double series
Case: ComPack
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCNA75P2200TA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 75A; TO240AA; Ufmax: 1.58V
Gate current: 95/200mA
Max. forward voltage: 1.58V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 75A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 75A; TO240AA; Ufmax: 1.58V
Gate current: 95/200mA
Max. forward voltage: 1.58V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 75A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCNA95P2200TA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 95A; TO240AA; Ufmax: 1.63V
Gate current: 150/200mA
Max. forward voltage: 1.63V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 95A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 95A; TO240AA; Ufmax: 1.63V
Gate current: 150/200mA
Max. forward voltage: 1.63V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 95A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MDNA140P2200TG |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Max. forward impulse current: 2.8kA
Max. forward voltage: 1.11V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 140A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Max. forward impulse current: 2.8kA
Max. forward voltage: 1.11V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 140A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MDNA380P2200KC |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V
Max. forward impulse current: 11kA
Max. forward voltage: 0.93V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 380A
Kind of package: bulk
Semiconductor structure: double series
Case: Y1-CU
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V
Max. forward impulse current: 11kA
Max. forward voltage: 0.93V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 380A
Kind of package: bulk
Semiconductor structure: double series
Case: Y1-CU
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA380N036T4-7-TR |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 15V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 54ns
Gate charge: 260nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 15V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 54ns
Gate charge: 260nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CPC1706Y |
|
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Mounting: THT
Control current max.: 50mA
On-state resistance: 90mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 5ms
Switched voltage: max. 60V DC
Case: SOP4
Max. operating current: 4A
Turn-off time: 2ms
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Mounting: THT
Control current max.: 50mA
On-state resistance: 90mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 5ms
Switched voltage: max. 60V DC
Case: SOP4
Max. operating current: 4A
Turn-off time: 2ms
auf Bestellung 724 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFZ140N25T |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 445W
Case: DE475
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 445W
Case: DE475
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXGH16N170A |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSEI2X101-12A |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 91Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 91A x2
Case: SOT227B
Max. forward voltage: 1.87V
Max. forward impulse current: 970A
Electrical mounting: screw
Max. load current: 182A
Mechanical mounting: screw
Kind of package: tube
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 91Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 91A x2
Case: SOT227B
Max. forward voltage: 1.87V
Max. forward impulse current: 970A
Electrical mounting: screw
Max. load current: 182A
Mechanical mounting: screw
Kind of package: tube
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYA55N65B5 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 395W; D2PAK
Type of transistor: IGBT
Power dissipation: 395W
Case: D2PAK
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Collector current: 55A
Collector-emitter voltage: 650V
Pulsed collector current: 250A
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 395W; D2PAK
Type of transistor: IGBT
Power dissipation: 395W
Case: D2PAK
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Collector current: 55A
Collector-emitter voltage: 650V
Pulsed collector current: 250A
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFH34N50P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Case: TO247-3
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 695W
Gate charge: 60nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Case: TO247-3
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 695W
Gate charge: 60nC
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFX64N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFN64N50P |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 85mΩ
Gate charge: 150nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
Category: Transistor modules
Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 85mΩ
Gate charge: 150nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFN94N50P2 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar2™
Category: Transistor modules
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar2™
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXFK94N50P2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXFR44N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXFK64N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFK64N50Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFX94N50P2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar2™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar2™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH44N50Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFK44N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFR64N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 37A; 300W; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 37A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHV™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 37A; 300W; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 37A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHV™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFX64N50Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFX74N50P2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 74A
Power dissipation: 1.4kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 74A
Power dissipation: 1.4kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTQ44N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFQ34N50P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFR64N50Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFT44N50P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFT44N50Q3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFP20N50P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 500V; 20A; 380W; TO220-3; 250ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO220-3
Gate-source voltage: 30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 500V; 20A; 380W; TO220-3; 250ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO220-3
Gate-source voltage: 30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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Stück im Wert von UAH
| DSA120X200LB-TUB |
|
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; tube; 185W
Case: SMPD
Mounting: SMD
Max. forward impulse current: 700A
Max. forward voltage: 0.67V
Power dissipation: 185W
Max. off-state voltage: 200V
Load current: 65A x2
Kind of package: tube
Semiconductor structure: double independent
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; tube; 185W
Case: SMPD
Mounting: SMD
Max. forward impulse current: 700A
Max. forward voltage: 0.67V
Power dissipation: 185W
Max. off-state voltage: 200V
Load current: 65A x2
Kind of package: tube
Semiconductor structure: double independent
Type of diode: Schottky rectifying
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYH20N65C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 105A
Turn-on time: 51ns
Turn-off time: 132ns
Gate charge: 30nC
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 105A
Turn-on time: 51ns
Turn-off time: 132ns
Gate charge: 30nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSSK60-015A |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; TO247-3; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.69V
Max. forward impulse current: 0.6kA
Power dissipation: 190W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; TO247-3; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.69V
Max. forward impulse current: 0.6kA
Power dissipation: 190W
Kind of package: tube
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
| IX4428MTR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Mounting: SMD
Number of channels: 2
Supply voltage: 4.5...30V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: inverting; non-inverting
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Mounting: SMD
Number of channels: 2
Supply voltage: 4.5...30V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: inverting; non-inverting
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| MUBW25-06A6K |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A
Collector current: 21A
Power dissipation: 100W
Case: E1-Pack
Technology: NPT
Mechanical mounting: screw
Pulsed collector current: 40A
Application: motors
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A
Collector current: 21A
Power dissipation: 100W
Case: E1-Pack
Technology: NPT
Mechanical mounting: screw
Pulsed collector current: 40A
Application: motors
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSS40-0008D |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40A; TO247-3; Ufmax: 0.23V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 0.23V
Max. forward impulse current: 0.6kA
Kind of package: tube
Power dissipation: 155W
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40A; TO247-3; Ufmax: 0.23V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 0.23V
Max. forward impulse current: 0.6kA
Kind of package: tube
Power dissipation: 155W
Case: TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen
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| DSA20C100PN |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.71V
Mounting: THT
Case: TO220FP
Max. off-state voltage: 0.1kV
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward impulse current: 0.24kA
Max. forward voltage: 0.71V
Power dissipation: 35W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.71V
Mounting: THT
Case: TO220FP
Max. off-state voltage: 0.1kV
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward impulse current: 0.24kA
Max. forward voltage: 0.71V
Power dissipation: 35W
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
| DSA20C45PB |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220AB; Ufmax: 0.61V
Mounting: THT
Max. forward impulse current: 260A
Max. forward voltage: 0.61V
Power dissipation: 45W
Max. off-state voltage: 45V
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220AB; Ufmax: 0.61V
Mounting: THT
Max. forward impulse current: 260A
Max. forward voltage: 0.61V
Power dissipation: 45W
Max. off-state voltage: 45V
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
auf Bestellung 312 Stücke:
Lieferzeit 14-21 Tag (e)
| MIXA60HU1200VA |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Technology: Sonic FRD™; XPT™
Power dissipation: 290W
Case: V1-A-Pack
Gate-emitter voltage: ±20V
Collector current: 60A
Topology: boost chopper; buck chopper; H-bridge
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors
Semiconductor structure: diode/transistor
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Technology: Sonic FRD™; XPT™
Power dissipation: 290W
Case: V1-A-Pack
Gate-emitter voltage: ±20V
Collector current: 60A
Topology: boost chopper; buck chopper; H-bridge
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors
Semiconductor structure: diode/transistor
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| IXTH26N60P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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| IXFT26N60P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| IXTQ26N60P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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Im Einkaufswagen
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| IXTT26N60P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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| IXTP36P15P |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB
Reverse recovery time: 228ns
Mounting: THT
Power dissipation: 300W
Gate charge: 55nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -36A
Kind of channel: enhancement
Drain-source voltage: -150V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 0.11Ω
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB
Reverse recovery time: 228ns
Mounting: THT
Power dissipation: 300W
Gate charge: 55nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -36A
Kind of channel: enhancement
Drain-source voltage: -150V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 0.11Ω
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTP36N30P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)
| IXSA40N120L2-7TR |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 30A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 53nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 30A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 53nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXSH40N120L2KHV |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 40A; 250W; TO247-4; 28.6ns
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 40A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 53nC
Kind of channel: enhancement
Reverse recovery time: 28.6ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 40A; 250W; TO247-4; 28.6ns
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 40A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 53nC
Kind of channel: enhancement
Reverse recovery time: 28.6ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
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| IXTY4N65X2-TRL |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; 650V; 4A; 80W; DPAK,TO252AA; 160ns
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 4A
Case: DPAK; TO252AA
Gate-source voltage: 30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 160ns
Power dissipation: 80W
Gate charge: 8.3nC
Technology: X2-Class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; 650V; 4A; 80W; DPAK,TO252AA; 160ns
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 4A
Case: DPAK; TO252AA
Gate-source voltage: 30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 160ns
Power dissipation: 80W
Gate charge: 8.3nC
Technology: X2-Class
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IXFH34N65X2W |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 34A; 540W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 34A
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 0.1Ω
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 180ns
Power dissipation: 540W
Gate charge: 64nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 34A; 540W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 34A
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 0.1Ω
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 180ns
Power dissipation: 540W
Gate charge: 64nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXTN500N20X4 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; 200V; 500A; SOT227B; 1.15kW; 250ns; screw
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 200V
Drain current: 500A
Case: SOT227B
On-state resistance: 1.99mΩ
Power dissipation: 1.15kW
Reverse recovery time: 250ns
Mechanical mounting: screw
Category: Transistor modules
Description: Module; 200V; 500A; SOT227B; 1.15kW; 250ns; screw
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 200V
Drain current: 500A
Case: SOT227B
On-state resistance: 1.99mΩ
Power dissipation: 1.15kW
Reverse recovery time: 250ns
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| DSP25-12A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 25A; Ifsm: 300A; TO247-3; tube; 160W
Max. off-state voltage: 1.2kV
Load current: 25A
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.16V
Power dissipation: 160W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 25A; Ifsm: 300A; TO247-3; tube; 160W
Max. off-state voltage: 1.2kV
Load current: 25A
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.16V
Power dissipation: 160W
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| MKI50-06A7T |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 0.6kV
Collector current: 50A
Case: E2-Pack
Application: for UPS; motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 225W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 0.6kV
Collector current: 50A
Case: E2-Pack
Application: for UPS; motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 225W
Technology: NPT
Mechanical mounting: screw
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| CPC3730CTR |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Power dissipation: 1.4W
Polarisation: unipolar
Drain current: 0.14A
Kind of channel: depletion
Drain-source voltage: 350V
Type of transistor: N-MOSFET
Gate-source voltage: ±15V
Kind of package: reel; tape
Case: SOT89
On-state resistance: 35Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Power dissipation: 1.4W
Polarisation: unipolar
Drain current: 0.14A
Kind of channel: depletion
Drain-source voltage: 350V
Type of transistor: N-MOSFET
Gate-source voltage: ±15V
Kind of package: reel; tape
Case: SOT89
On-state resistance: 35Ω
Mounting: SMD
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
| DPF10I600APA |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; TO220AC; tube
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; TO220AC; tube
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA80N075L2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)