| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFY4N85X | IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W Mounting: SMD Pulsed drain current: 10A Power dissipation: 150W Gate charge: 7nC Polarisation: unipolar Technology: HiPerFET™; X-Class Features of semiconductor devices: ultra junction x-class Drain current: 3.5A Kind of channel: enhancement Drain-source voltage: 850V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO252 On-state resistance: 2.5Ω Reverse recovery time: 170ns |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA8N85XHV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W Mounting: SMD Pulsed drain current: 16A Power dissipation: 200W Gate charge: 17nC Polarisation: unipolar Technology: HiPerFET™; X-Class Drain current: 8A Kind of channel: enhancement Drain-source voltage: 850V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: TO263HV On-state resistance: 0.85Ω Reverse recovery time: 125ns |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK66N85X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns Mounting: THT Power dissipation: 1.25kW Gate charge: 230nC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 66A Kind of channel: enhancement Drain-source voltage: 850V Type of transistor: N-MOSFET Kind of package: tube Case: TO264 On-state resistance: 65mΩ Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFH14N85X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO247-3; 116ns Mounting: THT Power dissipation: 460W Gate charge: 30nC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 14A Kind of channel: enhancement Drain-source voltage: 850V Type of transistor: N-MOSFET Kind of package: tube Case: TO247-3 On-state resistance: 0.55Ω Reverse recovery time: 116ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFH30N85X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO247-3; 160ns Mounting: THT Power dissipation: 695W Gate charge: 68nC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 30A Kind of channel: enhancement Drain-source voltage: 850V Type of transistor: N-MOSFET Kind of package: tube Case: TO247-3 On-state resistance: 0.23Ω Reverse recovery time: 160ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFT50N85XHV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns Mounting: SMD Power dissipation: 890W Gate charge: 152nC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 50A Kind of channel: enhancement Drain-source voltage: 850V Type of transistor: N-MOSFET Kind of package: tube Case: TO268HV On-state resistance: 0.105Ω Reverse recovery time: 218ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX66N85X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; PLUS247™; 250ns Mounting: THT Power dissipation: 1.25kW Gate charge: 230nC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 66A Kind of channel: enhancement Drain-source voltage: 850V Type of transistor: N-MOSFET Kind of package: tube Case: PLUS247™ On-state resistance: 65mΩ Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFA14N85XHV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns Mounting: SMD Power dissipation: 460W Gate charge: 30nC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 14A Kind of channel: enhancement Drain-source voltage: 850V Type of transistor: N-MOSFET Kind of package: tube Case: TO263HV On-state resistance: 0.55Ω Reverse recovery time: 116ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| IXFA14N85XHV-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 850V; 14A; 460W; D2PAK-3; 116ns Mounting: SMD Power dissipation: 460W Gate charge: 30nC Technology: HiPerFET™ Drain current: 14A Kind of channel: enhancement Drain-source voltage: 850V Type of transistor: N-MOSFET Gate-source voltage: 30V Case: D2PAK-3 On-state resistance: 0.55Ω Reverse recovery time: 116ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXFA20N85XHV-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 850V; 20A; 540W; D2PAK,TO263AB; 190ns Mounting: SMD Power dissipation: 540W Gate charge: 63nC Technology: HiPerFET™ Drain current: 20A Kind of channel: enhancement Drain-source voltage: 850V Type of transistor: N-MOSFET Gate-source voltage: 30V Case: D2PAK; TO263AB Reverse recovery time: 190ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFH20N85X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO247-3; 190ns Mounting: THT Power dissipation: 540W Gate charge: 63nC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 20A Kind of channel: enhancement Drain-source voltage: 850V Type of transistor: N-MOSFET Kind of package: tube Case: TO247-3 On-state resistance: 0.33Ω Reverse recovery time: 190ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFK50N85X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns Mounting: THT Power dissipation: 890W Gate charge: 152nC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 50A Kind of channel: enhancement Drain-source voltage: 850V Type of transistor: N-MOSFET Kind of package: tube Case: TO264 On-state resistance: 0.105Ω Reverse recovery time: 218ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| IXFH70N65X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W Case: TO247-3 Mounting: THT Kind of package: tube Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 44mΩ Reverse recovery time: 165ns Pulsed drain current: 110A Power dissipation: 780W Gate charge: 66nC Polarisation: unipolar Technology: HiPerFET™; X3-Class Drain current: 70A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IXFT70N65X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; D3PAK,TO268 Case: D3PAK; TO268 Mounting: SMD Type of transistor: N-MOSFET Technology: X3-Class |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXFN170N65X2 | IXYS |
Category: Transistor modules Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A Case: SOT227B Kind of channel: enhancement Drain-source voltage: 650V Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: ±30V Semiconductor structure: single transistor On-state resistance: 13mΩ Reverse recovery time: 270ns Pulsed drain current: 340A Type of semiconductor module: MOSFET transistor Power dissipation: 1.17kW Gate charge: 434nC Polarisation: unipolar Technology: HiPerFET™; X2-Class Drain current: 170A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| IXTT10N100D2-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 1kV; 10A; 695W; D3PAK,TO268; 1.2us Type of transistor: N-MOSFET Drain-source voltage: 1kV Drain current: 10A Power dissipation: 695W Case: D3PAK; TO268 Gate-source voltage: 20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 200nC Reverse recovery time: 1.2µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXTT110N10L2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 600W Case: TO268 On-state resistance: 18mΩ Mounting: SMD Gate charge: 260nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 230ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTQ110N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 480W Case: TO3P Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Technology: PolarHT™ Reverse recovery time: 130ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| IXTT110N10L2-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 100V; 110A; 600W; D3PAK,TO268; 230ns Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 110A Power dissipation: 600W Case: D3PAK; TO268 Gate-source voltage: 20V Mounting: SMD Gate charge: 260nC Reverse recovery time: 230ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXTT110N10P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 480W Case: TO268 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Technology: PolarHT™ Reverse recovery time: 130ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTP160N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB Mounting: THT Power dissipation: 430W Gate charge: 132nC Polarisation: unipolar Technology: Trench™ Drain current: 160A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB On-state resistance: 7mΩ Reverse recovery time: 60ns |
auf Bestellung 228 Stücke: Lieferzeit 14-21 Tag (e) |
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DMA30P1600HR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 30A; Ifsm: 255A; ISO247™; tube; 115W Mounting: THT Max. forward impulse current: 255A Max. forward voltage: 1.23V Power dissipation: 115W Max. off-state voltage: 1.6kV Load current: 30A Kind of package: tube Semiconductor structure: double series Case: ISO247™ Type of diode: rectifying |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| MDNA50P2200TG | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 50A; TO240AA; Ufmax: 1.09V Max. forward impulse current: 850A Max. forward voltage: 1.09V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 50A Kind of package: bulk Semiconductor structure: double series Case: TO240AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MDNA700P2200CC | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 700A; ComPack; Ufmax: 1.05V Max. forward impulse current: 20kA Max. forward voltage: 1.05V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 700A Kind of package: bulk Semiconductor structure: double series Case: ComPack |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCNA55P2200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 55A; TO240AA; Ufmax: 1.56V Gate current: 95/200mA Max. forward voltage: 1.56V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 55A Kind of package: bulk Semiconductor structure: double series Case: TO240AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCNA120P2200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 120A; TO240AA; screw Gate current: 100/200mA Max. forward voltage: 1.78V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 120A Kind of package: bulk Semiconductor structure: double series Case: TO240AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCNA150P2200YA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 150A; Y4-M6; Ufmax: 1.51V Gate current: 150/200mA Max. forward voltage: 1.51V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 150A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCNA180P2200YA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 180A; Y4-M6; Ufmax: 1.51V Gate current: 150/200mA Max. forward voltage: 1.51V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 180A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCNA220P2200YA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 220A; Y4-M6; Ufmax: 1.53V Gate current: 150/200mA Max. forward voltage: 1.53V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 220A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCNA40P2200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 40A; TO240AA; Ufmax: 1.74V Gate current: 70/150mA Max. forward voltage: 1.74V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 40A Kind of package: bulk Semiconductor structure: double series Case: TO240AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCNA650P2200CA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 650A; ComPack; screw Gate current: 300/400mA Max. forward voltage: 1.59V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 650A Kind of package: bulk Semiconductor structure: double series Case: ComPack |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCNA75P2200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 75A; TO240AA; Ufmax: 1.58V Gate current: 95/200mA Max. forward voltage: 1.58V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 75A Kind of package: bulk Semiconductor structure: double series Case: TO240AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCNA95P2200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 95A; TO240AA; Ufmax: 1.63V Gate current: 150/200mA Max. forward voltage: 1.63V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 95A Kind of package: bulk Semiconductor structure: double series Case: TO240AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MDNA140P2200TG | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 140A; TO240AA; Ufmax: 1.11V Max. forward impulse current: 2.8kA Max. forward voltage: 1.11V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 140A Kind of package: bulk Semiconductor structure: double series Case: TO240AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MDNA380P2200KC | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V Max. forward impulse current: 11kA Max. forward voltage: 0.93V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 380A Kind of package: bulk Semiconductor structure: double series Case: Y1-CU |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IXTA380N036T4-7-TR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 36V; 380A; 480W; TO263-7; 54ns Type of transistor: N-MOSFET Drain-source voltage: 36V Drain current: 380A Power dissipation: 480W Case: TO263-7 Gate-source voltage: 15V On-state resistance: 1mΩ Mounting: SMD Gate charge: 260nC Kind of channel: enhancement Reverse recovery time: 54ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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CPC1706Y | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω Mounting: THT Control current max.: 50mA On-state resistance: 90mΩ Type of relay: solid state Manufacturer series: OptoMOS Relay variant: current source Kind of output: MOSFET Body dimensions: 21.08x10.16x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 5ms Switched voltage: max. 60V DC Case: SOP4 Max. operating current: 4A Turn-off time: 2ms |
auf Bestellung 724 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXFZ140N25T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 100A Power dissipation: 445W Case: DE475 On-state resistance: 17mΩ Mounting: SMD Gate charge: 255nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXGH16N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 11A Power dissipation: 190W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 35ns Turn-off time: 298ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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DSEI2X101-12A | IXYS |
 Category: Diode modulesDescription: Module: diode; double independent; 1.2kV; If: 91Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 91A x2 Case: SOT227B Max. forward voltage: 1.87V Max. forward impulse current: 970A Electrical mounting: screw Max. load current: 182A Mechanical mounting: screw Kind of package: tube |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYA55N65B5 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 55A; 395W; D2PAK Type of transistor: IGBT Power dissipation: 395W Case: D2PAK Mounting: SMD Gate charge: 130nC Kind of package: tube Collector current: 55A Collector-emitter voltage: 650V Pulsed collector current: 250A Turn-off time: 200ns Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFH34N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 34A Power dissipation: 695W Case: TO247-3 On-state resistance: 0.18Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFX64N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 830W Case: PLUS247™ On-state resistance: 85mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 184 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN64N50P | IXYS |
Category: Transistor modules Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A Polarisation: unipolar Drain-source voltage: 500V Drain current: 50A Pulsed drain current: 150A Power dissipation: 625W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 85mΩ Gate charge: 150nC Kind of channel: enhancement Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 200ns Type of semiconductor module: MOSFET transistor Technology: HiPerFET™; Polar™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFN94N50P2 | IXYS |
Category: Transistor modules Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A Polarisation: unipolar Drain-source voltage: 500V Drain current: 68A Pulsed drain current: 240A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 55mΩ Gate charge: 0.22µC Kind of channel: enhancement Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 250ns Type of semiconductor module: MOSFET transistor Technology: HiPerFET™; Polar2™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFK94N50P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 94A Power dissipation: 1.3kW Case: TO264 On-state resistance: 55mΩ Mounting: THT Gate charge: 228nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFR44N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 24A Power dissipation: 208W Case: ISOPLUS247™ On-state resistance: 0.15Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFK64N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 830W Case: TO264 On-state resistance: 85mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFK64N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 1kW Case: TO264 On-state resistance: 85mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX94N50P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 94A Power dissipation: 1.3kW Case: PLUS247™ Gate-source voltage: ±30V On-state resistance: 55mΩ Mounting: THT Gate charge: 228nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns Technology: HiPerFET™; Polar2™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFH44N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 830W Case: TO247-3 On-state resistance: 0.14Ω Mounting: THT Gate charge: 93nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFK44N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 650W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns Technology: HiPerFET™; Polar™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFR64N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 37A; 300W; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 37A Power dissipation: 300W Case: ISOPLUS247™ Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns Technology: HiPerFET™; PolarHV™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX64N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 1kW Case: PLUS247™ On-state resistance: 85mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX74N50P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 74A Power dissipation: 1.4kW Case: PLUS247™ On-state resistance: 77mΩ Mounting: THT Gate charge: 165nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTQ44N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 650W Case: TO3P On-state resistance: 0.14Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFQ34N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 34A Power dissipation: 695W Case: TO3P On-state resistance: 0.18Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFR64N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 500W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 45A Power dissipation: 500W Case: ISOPLUS247™ On-state resistance: 94mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFT44N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 650W Case: TO268 On-state resistance: 0.14Ω Mounting: SMD Gate charge: 98nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFT44N50Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 830W Case: TO268 On-state resistance: 0.14Ω Mounting: SMD Gate charge: 93nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFY4N85X |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO252
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO252
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 14.17 EUR |
| IXFA8N85XHV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W
Mounting: SMD
Pulsed drain current: 16A
Power dissipation: 200W
Gate charge: 17nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: TO263HV
On-state resistance: 0.85Ω
Reverse recovery time: 125ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W
Mounting: SMD
Pulsed drain current: 16A
Power dissipation: 200W
Gate charge: 17nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: TO263HV
On-state resistance: 0.85Ω
Reverse recovery time: 125ns
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 7.91 EUR |
| 12+ | 7.09 EUR |
| 13+ | 7 EUR |
| IXFK66N85X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 65mΩ
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 65mΩ
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH14N85X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO247-3; 116ns
Mounting: THT
Power dissipation: 460W
Gate charge: 30nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO247-3; 116ns
Mounting: THT
Power dissipation: 460W
Gate charge: 30nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH30N85X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO247-3; 160ns
Mounting: THT
Power dissipation: 695W
Gate charge: 68nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.23Ω
Reverse recovery time: 160ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO247-3; 160ns
Mounting: THT
Power dissipation: 695W
Gate charge: 68nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.23Ω
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFT50N85XHV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Mounting: SMD
Power dissipation: 890W
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268HV
On-state resistance: 0.105Ω
Reverse recovery time: 218ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Mounting: SMD
Power dissipation: 890W
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268HV
On-state resistance: 0.105Ω
Reverse recovery time: 218ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFX66N85X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; PLUS247™; 250ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 65mΩ
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; PLUS247™; 250ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 65mΩ
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFA14N85XHV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Mounting: SMD
Power dissipation: 460W
Gate charge: 30nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263HV
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Mounting: SMD
Power dissipation: 460W
Gate charge: 30nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263HV
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFA14N85XHV-TRL |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 850V; 14A; 460W; D2PAK-3; 116ns
Mounting: SMD
Power dissipation: 460W
Gate charge: 30nC
Technology: HiPerFET™
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK-3
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 850V; 14A; 460W; D2PAK-3; 116ns
Mounting: SMD
Power dissipation: 460W
Gate charge: 30nC
Technology: HiPerFET™
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK-3
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFA20N85XHV-TRL |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 850V; 20A; 540W; D2PAK,TO263AB; 190ns
Mounting: SMD
Power dissipation: 540W
Gate charge: 63nC
Technology: HiPerFET™
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263AB
Reverse recovery time: 190ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 850V; 20A; 540W; D2PAK,TO263AB; 190ns
Mounting: SMD
Power dissipation: 540W
Gate charge: 63nC
Technology: HiPerFET™
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263AB
Reverse recovery time: 190ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFH20N85X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO247-3; 190ns
Mounting: THT
Power dissipation: 540W
Gate charge: 63nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.33Ω
Reverse recovery time: 190ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO247-3; 190ns
Mounting: THT
Power dissipation: 540W
Gate charge: 63nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.33Ω
Reverse recovery time: 190ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFK50N85X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Mounting: THT
Power dissipation: 890W
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 0.105Ω
Reverse recovery time: 218ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Mounting: THT
Power dissipation: 890W
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 0.105Ω
Reverse recovery time: 218ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFH70N65X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Reverse recovery time: 165ns
Pulsed drain current: 110A
Power dissipation: 780W
Gate charge: 66nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 70A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Reverse recovery time: 165ns
Pulsed drain current: 110A
Power dissipation: 780W
Gate charge: 66nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 70A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFT70N65X3HV |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; D3PAK,TO268
Case: D3PAK; TO268
Mounting: SMD
Type of transistor: N-MOSFET
Technology: X3-Class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; D3PAK,TO268
Case: D3PAK; TO268
Mounting: SMD
Type of transistor: N-MOSFET
Technology: X3-Class
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFN170N65X2 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Case: SOT227B
Kind of channel: enhancement
Drain-source voltage: 650V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±30V
Semiconductor structure: single transistor
On-state resistance: 13mΩ
Reverse recovery time: 270ns
Pulsed drain current: 340A
Type of semiconductor module: MOSFET transistor
Power dissipation: 1.17kW
Gate charge: 434nC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 170A
Category: Transistor modules
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Case: SOT227B
Kind of channel: enhancement
Drain-source voltage: 650V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±30V
Semiconductor structure: single transistor
On-state resistance: 13mΩ
Reverse recovery time: 270ns
Pulsed drain current: 340A
Type of semiconductor module: MOSFET transistor
Power dissipation: 1.17kW
Gate charge: 434nC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 170A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTT10N100D2-TRL |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 10A; 695W; D3PAK,TO268; 1.2us
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 200nC
Reverse recovery time: 1.2µs
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 10A; 695W; D3PAK,TO268; 1.2us
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 200nC
Reverse recovery time: 1.2µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTT110N10L2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
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| IXTQ110N10P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
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| IXTT110N10L2-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 110A; 600W; D3PAK,TO268; 230ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 260nC
Reverse recovery time: 230ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 110A; 600W; D3PAK,TO268; 230ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 260nC
Reverse recovery time: 230ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
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| IXTT110N10P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
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| IXTP160N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Mounting: THT
Power dissipation: 430W
Gate charge: 132nC
Polarisation: unipolar
Technology: Trench™
Drain current: 160A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 7mΩ
Reverse recovery time: 60ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Mounting: THT
Power dissipation: 430W
Gate charge: 132nC
Polarisation: unipolar
Technology: Trench™
Drain current: 160A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 7mΩ
Reverse recovery time: 60ns
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.59 EUR |
| 17+ | 5.27 EUR |
| 50+ | 4.38 EUR |
| 100+ | 4.26 EUR |
| DMA30P1600HR |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; Ifsm: 255A; ISO247™; tube; 115W
Mounting: THT
Max. forward impulse current: 255A
Max. forward voltage: 1.23V
Power dissipation: 115W
Max. off-state voltage: 1.6kV
Load current: 30A
Kind of package: tube
Semiconductor structure: double series
Case: ISO247™
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; Ifsm: 255A; ISO247™; tube; 115W
Mounting: THT
Max. forward impulse current: 255A
Max. forward voltage: 1.23V
Power dissipation: 115W
Max. off-state voltage: 1.6kV
Load current: 30A
Kind of package: tube
Semiconductor structure: double series
Case: ISO247™
Type of diode: rectifying
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 10.94 EUR |
| 10+ | 9.66 EUR |
| 30+ | 8.85 EUR |
| MDNA50P2200TG |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Max. forward impulse current: 850A
Max. forward voltage: 1.09V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Max. forward impulse current: 850A
Max. forward voltage: 1.09V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
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| MDNA700P2200CC |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 700A; ComPack; Ufmax: 1.05V
Max. forward impulse current: 20kA
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 700A
Kind of package: bulk
Semiconductor structure: double series
Case: ComPack
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 700A; ComPack; Ufmax: 1.05V
Max. forward impulse current: 20kA
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 700A
Kind of package: bulk
Semiconductor structure: double series
Case: ComPack
Produkt ist nicht verfügbar
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| MCNA55P2200TA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 55A; TO240AA; Ufmax: 1.56V
Gate current: 95/200mA
Max. forward voltage: 1.56V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 55A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 55A; TO240AA; Ufmax: 1.56V
Gate current: 95/200mA
Max. forward voltage: 1.56V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 55A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
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| MCNA120P2200TA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 120A; TO240AA; screw
Gate current: 100/200mA
Max. forward voltage: 1.78V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 120A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 120A; TO240AA; screw
Gate current: 100/200mA
Max. forward voltage: 1.78V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 120A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
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| MCNA150P2200YA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 150A; Y4-M6; Ufmax: 1.51V
Gate current: 150/200mA
Max. forward voltage: 1.51V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 150A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 150A; Y4-M6; Ufmax: 1.51V
Gate current: 150/200mA
Max. forward voltage: 1.51V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 150A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Produkt ist nicht verfügbar
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| MCNA180P2200YA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 180A; Y4-M6; Ufmax: 1.51V
Gate current: 150/200mA
Max. forward voltage: 1.51V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 180A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 180A; Y4-M6; Ufmax: 1.51V
Gate current: 150/200mA
Max. forward voltage: 1.51V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 180A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Produkt ist nicht verfügbar
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| MCNA220P2200YA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 220A; Y4-M6; Ufmax: 1.53V
Gate current: 150/200mA
Max. forward voltage: 1.53V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 220A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 220A; Y4-M6; Ufmax: 1.53V
Gate current: 150/200mA
Max. forward voltage: 1.53V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 220A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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| MCNA40P2200TA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 40A; TO240AA; Ufmax: 1.74V
Gate current: 70/150mA
Max. forward voltage: 1.74V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 40A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 40A; TO240AA; Ufmax: 1.74V
Gate current: 70/150mA
Max. forward voltage: 1.74V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 40A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
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| MCNA650P2200CA |
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 650A; ComPack; screw
Gate current: 300/400mA
Max. forward voltage: 1.59V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 650A
Kind of package: bulk
Semiconductor structure: double series
Case: ComPack
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 650A; ComPack; screw
Gate current: 300/400mA
Max. forward voltage: 1.59V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 650A
Kind of package: bulk
Semiconductor structure: double series
Case: ComPack
Produkt ist nicht verfügbar
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| MCNA75P2200TA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 75A; TO240AA; Ufmax: 1.58V
Gate current: 95/200mA
Max. forward voltage: 1.58V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 75A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 75A; TO240AA; Ufmax: 1.58V
Gate current: 95/200mA
Max. forward voltage: 1.58V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 75A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
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| MCNA95P2200TA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 95A; TO240AA; Ufmax: 1.63V
Gate current: 150/200mA
Max. forward voltage: 1.63V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 95A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 95A; TO240AA; Ufmax: 1.63V
Gate current: 150/200mA
Max. forward voltage: 1.63V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 95A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
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| MDNA140P2200TG |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Max. forward impulse current: 2.8kA
Max. forward voltage: 1.11V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 140A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Max. forward impulse current: 2.8kA
Max. forward voltage: 1.11V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 140A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
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| MDNA380P2200KC |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V
Max. forward impulse current: 11kA
Max. forward voltage: 0.93V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 380A
Kind of package: bulk
Semiconductor structure: double series
Case: Y1-CU
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V
Max. forward impulse current: 11kA
Max. forward voltage: 0.93V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 380A
Kind of package: bulk
Semiconductor structure: double series
Case: Y1-CU
Produkt ist nicht verfügbar
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| IXTA380N036T4-7-TR |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 15V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhancement
Reverse recovery time: 54ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 15V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhancement
Reverse recovery time: 54ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CPC1706Y |
|
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Mounting: THT
Control current max.: 50mA
On-state resistance: 90mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 5ms
Switched voltage: max. 60V DC
Case: SOP4
Max. operating current: 4A
Turn-off time: 2ms
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Mounting: THT
Control current max.: 50mA
On-state resistance: 90mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 5ms
Switched voltage: max. 60V DC
Case: SOP4
Max. operating current: 4A
Turn-off time: 2ms
auf Bestellung 724 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 8.03 EUR |
| 13+ | 6.77 EUR |
| 25+ | 6.32 EUR |
| IXFZ140N25T |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 445W
Case: DE475
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 445W
Case: DE475
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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| IXGH16N170A |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSEI2X101-12A |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 91Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 91A x2
Case: SOT227B
Max. forward voltage: 1.87V
Max. forward impulse current: 970A
Electrical mounting: screw
Max. load current: 182A
Mechanical mounting: screw
Kind of package: tube
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 91Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 91A x2
Case: SOT227B
Max. forward voltage: 1.87V
Max. forward impulse current: 970A
Electrical mounting: screw
Max. load current: 182A
Mechanical mounting: screw
Kind of package: tube
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 63.56 EUR |
| 5+ | 58.38 EUR |
| 10+ | 55.13 EUR |
| IXYA55N65B5 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 395W; D2PAK
Type of transistor: IGBT
Power dissipation: 395W
Case: D2PAK
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Collector current: 55A
Collector-emitter voltage: 650V
Pulsed collector current: 250A
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 395W; D2PAK
Type of transistor: IGBT
Power dissipation: 395W
Case: D2PAK
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Collector current: 55A
Collector-emitter voltage: 650V
Pulsed collector current: 250A
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFH34N50P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 12.28 EUR |
| 10+ | 8.83 EUR |
| IXFX64N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 23.7 EUR |
| 5+ | 21.03 EUR |
| 10+ | 19.71 EUR |
| 30+ | 17.92 EUR |
| IXFN64N50P |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 85mΩ
Gate charge: 150nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
Category: Transistor modules
Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 85mΩ
Gate charge: 150nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFN94N50P2 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar2™
Category: Transistor modules
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar2™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFK94N50P2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFR44N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFK64N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFK64N50Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFX94N50P2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar2™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar2™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH44N50Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFK44N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFR64N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 37A; 300W; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 37A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHV™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 37A; 300W; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 37A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHV™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFX64N50Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFX74N50P2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 74A
Power dissipation: 1.4kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 74A
Power dissipation: 1.4kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTQ44N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFQ34N50P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFR64N50Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFT44N50P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFT44N50Q3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH