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IXTH75N10L2 IXTH75N10L2 IXYS IXT_75N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
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MMIX1F132N50P3
+1
 		MMIX1F132N50P3 IXYS littelfuse-discrete-mosfets-mmix1f132n50p3-datasheet?assetguid=78cb4333-d3a9-496a-a626-6ed7394c5316 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Pulsed drain current: 330A
Power dissipation: 520W
Technology: HiPerFET™; Polar3™
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IXFN132N50P3 IXFN132N50P3 IXYS IXFN132N50P3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 112A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 39mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Gate charge: 250nC
Reverse recovery time: 250ns
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Pulsed drain current: 330A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
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IXFB132N50P3 IXFB132N50P3 IXYS IXFB132N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Power dissipation: 1890W
Technology: HiPerFET™; Polar3™
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IXFL132N50P3 IXFL132N50P3 IXYS IXFL132N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Power dissipation: 520W
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IXTH1N450HV IXTH1N450HV IXYS IXTH(T)1N450HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 80Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
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IXTH60N20L2 IXTH60N20L2 IXYS IXTH(T,Q)60N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
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IXTH26N60P IXTH26N60P IXYS IXTH(Q,T,V)26N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
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IXFH60N50P3 IXFH60N50P3 IXYS IXF_60N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
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IXTX60N50L2 IXTX60N50L2 IXYS IXTK(X)60N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 980ns
Gate charge: 610nC
On-state resistance: 0.1Ω
Drain-source voltage: 500V
Drain current: 60A
Features of semiconductor devices: linear power mosfet
Kind of channel: enhancement
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DSA120X200LB-TRR IXYS Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. forward voltage: 0.67V
Load current: 65A x2
Power dissipation: 185W
Max. off-state voltage: 200V
Max. forward impulse current: 700A
Semiconductor structure: double independent
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CPC3982TTR CPC3982TTR IXYS CPC3982.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Kind of package: reel; tape
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Drain current: 0.15A
Power dissipation: 0.4W
Gate-source voltage: ±15V
On-state resistance: 380Ω
Drain-source voltage: 800V
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CPC3730CTR CPC3730CTR IXYS CPC3730.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Mounting: SMD
Drain current: 0.14A
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.4W
Kind of channel: depletion
Gate-source voltage: ±15V
On-state resistance: 35Ω
Case: SOT89
Drain-source voltage: 350V
Kind of package: reel; tape
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IXTA90N055T2 IXTA90N055T2 IXYS IXTA(I,P,Y)90N055T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO263; 37ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Case: TO263
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 37ns
Power dissipation: 150W
Drain current: 90A
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 42nC
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IXFH90N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh90n65x3-datasheet?assetguid=d4c565e9-7fdb-4ff8-bc54-16d1603a6ce2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 90A; Idm: 150A; 960W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 90A
Pulsed drain current: 150A
Power dissipation: 960W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 175ns
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IXTH80N075L2 IXTH80N075L2 IXYS IXTA(H,P)80N075L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
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IXTP80N075L2 IXTP80N075L2 IXYS IXTA(H,P)80N075L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
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IXTA80N075L2 IXTA80N075L2 IXYS IXTA(H,P)80N075L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
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VUO160-12NO7 IXYS VUO160-12NO7.pdf LFPCN250701_PWS-x screw.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.39V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
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VBO160-12NO7 IXYS VBO160-12NO7.pdf LFPCN250701_PWS-x screw.pdf Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 160A; Ifsm: 2.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 160A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
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IXFH20N100P IXFH20N100P IXYS IXF_20N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
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IXFT20N100P IXFT20N100P IXYS IXF_20N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
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XBB170P XBB170P IXYS XBB170.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LBB110 LBB110 IXYS LBB110.pdf description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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FUO50-16N FUO50-16N IXYS FUO50-16N.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Electrical mounting: THT
Type of bridge rectifier: three-phase
Load current: 50A
Max. forward voltage: 1.04V
Max. forward impulse current: 270A
Max. off-state voltage: 1.6kV
Case: ISOPLUS i4-pac™ x024a
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IXFN210N20P IXFN210N20P IXYS IXFN210N20P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 188A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10.5mΩ
Pulsed drain current: 600A
Power dissipation: 1.07kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 255nC
Kind of channel: enhancement
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IXFN44N100P IXFN44N100P IXYS IXFN44N100P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 37A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 0.35µC
Kind of channel: enhancement
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MDD142-14N1 IXYS MDD142-14N1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y4-M6
Mechanical mounting: screw
Electrical mounting: screw
Load current: 165A
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Max. off-state voltage: 1.4kV
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MDD142-16N1 MDD142-16N1 IXYS MDD142-16N1-DTE.pdf PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y4-M6
Mechanical mounting: screw
Electrical mounting: screw
Load current: 165A
Max. load current: 300A
Max. forward voltage: 1.05V
Max. forward impulse current: 4kA
Max. off-state voltage: 1.6kV
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MDD142-18N1 IXYS PCN241015_Y4-M6 screw.pdf MDD142-18N1.pdf Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y4-M6
Mechanical mounting: screw
Electrical mounting: screw
Load current: 165A
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Max. off-state voltage: 1.8kV
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MDD142-08N1 IXYS MDD142-08N1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double series; 800V; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y4-M6
Mechanical mounting: screw
Electrical mounting: screw
Load current: 165A
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Max. off-state voltage: 0.8kV
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MDD142-12N1 IXYS MDD142-12N1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y4-M6
Mechanical mounting: screw
Electrical mounting: screw
Load current: 165A
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Max. off-state voltage: 1.2kV
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CLA60PD1200NA CLA60PD1200NA IXYS CLA60PD1200NA.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Gate current: 40/80mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.09V
Load current: 60A
Max. load current: 94A
Max. forward impulse current: 935A
Max. off-state voltage: 1.2kV
Kind of package: bulk
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CLA100PD1200NA CLA100PD1200NA IXYS Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 100A
Case: SOT227B
Max. forward voltage: 1.21V
Max. forward impulse current: 1.5kA
Gate current: 40/80mA
Electrical mounting: screw
Max. load current: 150A
Threshold on-voltage: 0.83V
Kind of package: bulk
Mechanical mounting: screw
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IXFH15N100P IXFH15N100P IXYS IXFH15N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
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IXFA5N100P IXFA5N100P IXYS IXFA(H,P)5N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 5A; 250W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 250W
Case: TO263
Mounting: SMD
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
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IXTP05N100P IXTP05N100P IXYS IXTP05N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.5A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
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IXTP05N100 IXTP05N100 IXYS IXTA(P)05N100_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO220AB
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
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IXTA05N100 IXTA05N100 IXYS IXTA(P)05N100_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
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IXTP05N100M IXTP05N100M IXYS IXTP05N100M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.7A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
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IXFH15N100Q3 IXFH15N100Q3 IXYS IXF_15N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
auf Bestellung 300 Stücke:
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5+16.03 EUR
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IXFT15N100Q3 IXFT15N100Q3 IXYS IXF_15N100Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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LDA100STR LDA100STR IXYS LDA100.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 33-300%@1mA; 50mA
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
Collector-emitter voltage: 30V
Number of channels: 1
CTR@If: 33-300%@1mA
Insulation voltage: 3.75kV
auf Bestellung 720 Stücke:
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78+0.92 EUR
100+0.79 EUR
400+0.72 EUR
500+0.71 EUR
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LDA102 LDA102 IXYS LDA102.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 500mV
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: transistor
Collector-emitter voltage: 500mV
Number of channels: 1
CTR@If: 50-350%@1mA
Insulation voltage: 3.75kV
Case: DIP6
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LDA100 LDA100 IXYS LDA100.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 30V
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: transistor
Collector-emitter voltage: 30V
Number of channels: 1
CTR@If: 33-300%@1mA
Insulation voltage: 3.75kV
Case: DIP6
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IXTT1N450HV IXTT1N450HV IXYS IXTH(T)1N450HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1A
Power dissipation: 520W
Case: TO268HV
On-state resistance: 80Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Produkt ist nicht verfügbar
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CPC1150NTR CPC1150NTR IXYS CPC1150N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXTN30N100L IXTN30N100L IXYS IXTN30N100L.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.45Ω
Gate charge: 545nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Technology: Linear™
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXTB30N100L IXYS IXTB30N100L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXFA130N10T2 IXFA130N10T2 IXYS IXFA(P)130N10T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXTP130N10T IXTP130N10T IXYS IXTA(P)130N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 67ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA130N10T IXYS IXTA130N10T.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
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IXTA130N10T-TRL IXYS IXTA130N10T.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
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IXTA130N10T7 IXYS IXTA130N10T7.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
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IXTA340N04T4-7 IXTA340N04T4-7 IXYS IXTA340N04T4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263-7; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Produkt ist nicht verfügbar
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IXTH340N04T4 IXTH340N04T4 IXYS IXTH(P)340N04T4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO247-3; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Produkt ist nicht verfügbar
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IXTA340N04T4 IXTA340N04T4 IXYS IXTA340N04T4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Produkt ist nicht verfügbar
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IXTP340N04T4 IXTP340N04T4 IXYS IXTH(P)340N04T4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO220AB; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Produkt ist nicht verfügbar
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IXTT440N04T4HV IXTT440N04T4HV IXYS IXTT440N04T4HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 440A; 940W; TO268HV; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 440A
Power dissipation: 940W
Case: TO268HV
On-state resistance: 1.25mΩ
Mounting: SMD
Gate charge: 480nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
Produkt ist nicht verfügbar
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IXTQ3N150M IXTQ3N150M IXYS IXTQ3N150M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.83A
Pulsed drain current: 9A
Power dissipation: 73W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 7.3Ω
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXTH75N10L2 IXT_75N10L2.pdf
IXTH75N10L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
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MMIX1F132N50P3 littelfuse-discrete-mosfets-mmix1f132n50p3-datasheet?assetguid=78cb4333-d3a9-496a-a626-6ed7394c5316
MMIX1F132N50P3
+1
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Pulsed drain current: 330A
Power dissipation: 520W
Technology: HiPerFET™; Polar3™
auf Bestellung 20 Stücke:
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2+58.34 EUR
3+51.59 EUR
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IXFN132N50P3 IXFN132N50P3.pdf
IXFN132N50P3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 112A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 39mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Gate charge: 250nC
Reverse recovery time: 250ns
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Pulsed drain current: 330A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
auf Bestellung 20 Stücke:
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2+49.34 EUR
5+46.3 EUR
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IXFB132N50P3 IXFB132N50P3.pdf
IXFB132N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Power dissipation: 1890W
Technology: HiPerFET™; Polar3™
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IXFL132N50P3 IXFL132N50P3.pdf
IXFL132N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Power dissipation: 520W
Produkt ist nicht verfügbar
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IXTH1N450HV IXTH(T)1N450HV.pdf
IXTH1N450HV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 80Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
auf Bestellung 28 Stücke:
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Anzahl Preis
2+44.14 EUR
5+43.6 EUR
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IXTH60N20L2 IXTH(T,Q)60N20L2.pdf
IXTH60N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
Produkt ist nicht verfügbar
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IXTH26N60P IXTH(Q,T,V)26N60P_S.pdf
IXTH26N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXFH60N50P3 IXF_60N50P3.pdf
IXFH60N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
auf Bestellung 339 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.32 EUR
9+8.35 EUR
Mindestbestellmenge: 8
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IXTX60N50L2 IXTK(X)60N50L2.pdf
IXTX60N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 980ns
Gate charge: 610nC
On-state resistance: 0.1Ω
Drain-source voltage: 500V
Drain current: 60A
Features of semiconductor devices: linear power mosfet
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DSA120X200LB-TRR
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. forward voltage: 0.67V
Load current: 65A x2
Power dissipation: 185W
Max. off-state voltage: 200V
Max. forward impulse current: 700A
Semiconductor structure: double independent
Produkt ist nicht verfügbar
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CPC3982TTR CPC3982.pdf
CPC3982TTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Kind of package: reel; tape
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Drain current: 0.15A
Power dissipation: 0.4W
Gate-source voltage: ±15V
On-state resistance: 380Ω
Drain-source voltage: 800V
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
Mindestbestellmenge: 139
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CPC3730CTR CPC3730.pdf
CPC3730CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Mounting: SMD
Drain current: 0.14A
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.4W
Kind of channel: depletion
Gate-source voltage: ±15V
On-state resistance: 35Ω
Case: SOT89
Drain-source voltage: 350V
Kind of package: reel; tape
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.1 EUR
Mindestbestellmenge: 23
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IXTA90N055T2 IXTA(I,P,Y)90N055T2.pdf
IXTA90N055T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO263; 37ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Case: TO263
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 37ns
Power dissipation: 150W
Drain current: 90A
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 42nC
Produkt ist nicht verfügbar
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IXFH90N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh90n65x3-datasheet?assetguid=d4c565e9-7fdb-4ff8-bc54-16d1603a6ce2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 90A; Idm: 150A; 960W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 90A
Pulsed drain current: 150A
Power dissipation: 960W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 175ns
Produkt ist nicht verfügbar
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IXTH80N075L2 IXTA(H,P)80N075L2.pdf
IXTH80N075L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.94 EUR
9+8.17 EUR
10+7.28 EUR
30+7.26 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTP80N075L2 IXTA(H,P)80N075L2.pdf
IXTP80N075L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.08 EUR
11+6.85 EUR
12+6.15 EUR
50+6.09 EUR
Mindestbestellmenge: 9
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IXTA80N075L2 IXTA(H,P)80N075L2.pdf
IXTA80N075L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.84 EUR
10+13.08 EUR
25+11.47 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
VUO160-12NO7 VUO160-12NO7.pdf LFPCN250701_PWS-x screw.pdf
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.39V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
Produkt ist nicht verfügbar
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VBO160-12NO7 VBO160-12NO7.pdf LFPCN250701_PWS-x screw.pdf
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 160A; Ifsm: 2.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 160A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFH20N100P IXF_20N100P.pdf
IXFH20N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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IXFT20N100P IXF_20N100P.pdf
IXFT20N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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XBB170P XBB170.pdf
XBB170P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.55 EUR
50+6.26 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
LBB110 description LBB110.pdf
LBB110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.11 EUR
13+5.68 EUR
100+4.93 EUR
Mindestbestellmenge: 11
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FUO50-16N FUO50-16N.pdf
FUO50-16N
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Electrical mounting: THT
Type of bridge rectifier: three-phase
Load current: 50A
Max. forward voltage: 1.04V
Max. forward impulse current: 270A
Max. off-state voltage: 1.6kV
Case: ISOPLUS i4-pac™ x024a
auf Bestellung 169 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.81 EUR
5+21.46 EUR
Mindestbestellmenge: 4
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IXFN210N20P IXFN210N20P.pdf
IXFN210N20P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 188A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10.5mΩ
Pulsed drain current: 600A
Power dissipation: 1.07kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 255nC
Kind of channel: enhancement
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+46.89 EUR
10+42.99 EUR
Mindestbestellmenge: 2
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IXFN44N100P IXFN44N100P.pdf
IXFN44N100P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 37A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 0.35µC
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+43.59 EUR
10+42.57 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MDD142-14N1 MDD142-14N1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y4-M6
Mechanical mounting: screw
Electrical mounting: screw
Load current: 165A
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Max. off-state voltage: 1.4kV
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+79.78 EUR
3+71.86 EUR
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MDD142-16N1 MDD142-16N1-DTE.pdf PCN241015_Y4-M6 screw.pdf
MDD142-16N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y4-M6
Mechanical mounting: screw
Electrical mounting: screw
Load current: 165A
Max. load current: 300A
Max. forward voltage: 1.05V
Max. forward impulse current: 4kA
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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MDD142-18N1 PCN241015_Y4-M6 screw.pdf MDD142-18N1.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y4-M6
Mechanical mounting: screw
Electrical mounting: screw
Load current: 165A
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Max. off-state voltage: 1.8kV
Produkt ist nicht verfügbar
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MDD142-08N1 MDD142-08N1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 800V; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y4-M6
Mechanical mounting: screw
Electrical mounting: screw
Load current: 165A
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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MDD142-12N1 MDD142-12N1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y4-M6
Mechanical mounting: screw
Electrical mounting: screw
Load current: 165A
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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CLA60PD1200NA CLA60PD1200NA.pdf
CLA60PD1200NA
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Gate current: 40/80mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.09V
Load current: 60A
Max. load current: 94A
Max. forward impulse current: 935A
Max. off-state voltage: 1.2kV
Kind of package: bulk
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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CLA100PD1200NA Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969
CLA100PD1200NA
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 100A
Case: SOT227B
Max. forward voltage: 1.21V
Max. forward impulse current: 1.5kA
Gate current: 40/80mA
Electrical mounting: screw
Max. load current: 150A
Threshold on-voltage: 0.83V
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+45.63 EUR
Mindestbestellmenge: 2
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IXFH15N100P IXFH15N100P.pdf
IXFH15N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.48 EUR
10+11.04 EUR
30+9.91 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFA5N100P IXFA(H,P)5N100P.pdf
IXFA5N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 5A; 250W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 250W
Case: TO263
Mounting: SMD
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTP05N100P IXTP05N100P.pdf
IXTP05N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.5A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
Produkt ist nicht verfügbar
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IXTP05N100 IXTA(P)05N100_HV.pdf
IXTP05N100
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO220AB
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
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IXTA05N100 IXTA(P)05N100_HV.pdf
IXTA05N100
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
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IXTP05N100M IXTP05N100M.pdf
IXTP05N100M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.7A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
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IXFH15N100Q3 IXF_15N100Q3.pdf
IXFH15N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.02 EUR
5+16.03 EUR
10+15.72 EUR
Mindestbestellmenge: 4
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IXFT15N100Q3 IXF_15N100Q3.pdf
IXFT15N100Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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LDA100STR LDA100.pdf
LDA100STR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 33-300%@1mA; 50mA
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
Collector-emitter voltage: 30V
Number of channels: 1
CTR@If: 33-300%@1mA
Insulation voltage: 3.75kV
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
78+0.92 EUR
100+0.79 EUR
400+0.72 EUR
500+0.71 EUR
Mindestbestellmenge: 66
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LDA102 LDA102.pdf
LDA102
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 500mV
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: transistor
Collector-emitter voltage: 500mV
Number of channels: 1
CTR@If: 50-350%@1mA
Insulation voltage: 3.75kV
Case: DIP6
auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
222+0.32 EUR
242+0.3 EUR
Mindestbestellmenge: 125
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LDA100 LDA100.pdf
LDA100
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 30V
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: transistor
Collector-emitter voltage: 30V
Number of channels: 1
CTR@If: 33-300%@1mA
Insulation voltage: 3.75kV
Case: DIP6
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.93 EUR
Mindestbestellmenge: 37
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IXTT1N450HV IXTH(T)1N450HV.pdf
IXTT1N450HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1A
Power dissipation: 520W
Case: TO268HV
On-state resistance: 80Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
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CPC1150NTR CPC1150N.pdf
CPC1150NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXTN30N100L IXTN30N100L.pdf
IXTN30N100L
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.45Ω
Gate charge: 545nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Technology: Linear™
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXTB30N100L IXTB30N100L.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXFA130N10T2 IXFA(P)130N10T2.pdf
IXFA130N10T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTP130N10T IXTA(P)130N10T.pdf
IXTP130N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 67ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA130N10T IXTA130N10T.PDF
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
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IXTA130N10T-TRL IXTA130N10T.PDF
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
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IXTA130N10T7 IXTA130N10T7.PDF
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
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IXTA340N04T4-7 IXTA340N04T4.pdf
IXTA340N04T4-7
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263-7; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Produkt ist nicht verfügbar
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IXTH340N04T4 IXTH(P)340N04T4.pdf
IXTH340N04T4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO247-3; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
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IXTA340N04T4 IXTA340N04T4.pdf
IXTA340N04T4
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Produkt ist nicht verfügbar
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IXTP340N04T4 IXTH(P)340N04T4.pdf
IXTP340N04T4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO220AB; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Produkt ist nicht verfügbar
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IXTT440N04T4HV IXTT440N04T4HV.pdf
IXTT440N04T4HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 440A; 940W; TO268HV; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 440A
Power dissipation: 940W
Case: TO268HV
On-state resistance: 1.25mΩ
Mounting: SMD
Gate charge: 480nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
Produkt ist nicht verfügbar
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IXTQ3N150M IXTQ3N150M.pdf
IXTQ3N150M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.83A
Pulsed drain current: 9A
Power dissipation: 73W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 7.3Ω
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
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