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CPC2317N CPC2317N IXYS CPC2317N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Mounting: SMT
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Kind of output: MOSFET
Max. operating current: 120mA
On-state resistance: 16Ω
Case: SO8
Insulation voltage: 1.5kV
auf Bestellung 577 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.16 EUR
36+2 EUR
38+1.9 EUR
50+1.8 EUR
100+1.72 EUR
150+1.7 EUR
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IXTP34N65X2 IXTP34N65X2 IXYS IXT_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
Produkt ist nicht verfügbar
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IXFN60N80P IXFN60N80P IXYS IXFN60N80P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 53A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.14Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 250nC
Reverse recovery time: 250ns
Kind of channel: enhancement
auf Bestellung 195 Stücke:
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2+45.62 EUR
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IXFX300N20X3 IXFX300N20X3 IXYS IXF_300N20X3.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
auf Bestellung 21 Stücke:
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3+34.41 EUR
10+31.4 EUR
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MCD312-16io1 MCD312-16io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4DA694FFC2469&compId=MCC312-12IO1.pdf?ci_sign=3f968db46db8a1b8ba38583aacd1605eca7d74da Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
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IXFT24N80P IXFT24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTP100N04T2 IXTP100N04T2 IXYS IXTA(P)100N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
On-state resistance: 7mΩ
Drain current: 100A
Drain-source voltage: 40V
auf Bestellung 267 Stücke:
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24+3.02 EUR
38+1.89 EUR
50+1.66 EUR
100+1.6 EUR
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IXTY2N65X2 IXTY2N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89C4F8CE3158BF&compId=IXTP(Y)2N65X2.pdf?ci_sign=a1b44b73e461987c86a1219b0eef051f39a61060 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
Produkt ist nicht verfügbar
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IXFH26N60P IXFH26N60P IXYS IXFH26N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 259 Stücke:
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8+10.2 EUR
9+8.71 EUR
10+7.38 EUR
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CPC1117NTR CPC1117NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20A20C7&compId=CPC1117N.pdf?ci_sign=18d490086b78a6320fb704976e77bbb11aadfa34 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXFK64N60P3 IXFK64N60P3 IXYS IXF_64N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
auf Bestellung 291 Stücke:
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5+15.04 EUR
10+13.69 EUR
25+12.87 EUR
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IXTQ64N25P IXTQ64N25P IXYS IXTQ64N25P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO3P
Mounting: THT
Power dissipation: 400W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: PolarHT™
Case: TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 200ns
On-state resistance: 49mΩ
Drain current: 64A
Produkt ist nicht verfügbar
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IXKK85N60C IXKK85N60C IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC765820&compId=IXKK85N60C.pdf?ci_sign=45f48f1ec514485461df7d7e3f166714c6045391 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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IXTA120P065T IXTA120P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO263
Technology: TrenchP™
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
auf Bestellung 277 Stücke:
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13+5.68 EUR
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IXFK44N50P IXFK44N50P IXYS IXFK44N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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VHF25-08IO7 VHF25-08IO7 IXYS VHF25-ser.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 32A
Max. forward impulse current: 180A
Gate current: 25/50mA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
auf Bestellung 20 Stücke:
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4+18.79 EUR
5+16.6 EUR
10+14.93 EUR
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MDA72-16N1B MDA72-16N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double,common anode; 1.6kV; If: 113Ax2; TO240AA
Max. forward impulse current: 1.54kA
Semiconductor structure: common anode; double
Case: TO240AA
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.6V
Load current: 113A x2
Type of semiconductor module: diode
auf Bestellung 20 Stücke:
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2+45.8 EUR
3+40.53 EUR
10+36.36 EUR
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IXBH20N300 IXBH20N300 IXYS littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 64ns
Gate charge: 105nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Power dissipation: 250W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
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DPF240X400NA DPF240X400NA IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA92966DC56E4A20C4&compId=DPF240X400NA.pdf?ci_sign=6fc4d0c4dfe81c07d0f6501815c460a2ef5b3645 Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Max. forward voltage: 1.06V
Max. load current: 120A
Load current: 120A x2
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.2kA
auf Bestellung 43 Stücke:
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2+49.68 EUR
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IXFP6N120P IXFP6N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D454445020B820&compId=IXFA(H%2CP)6N120P.pdf?ci_sign=943297d656831e25efec803b2ad2b28ea7b42a34 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 92nC
Power dissipation: 250W
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8+9.7 EUR
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CMA80MT1600NHR CMA80MT1600NHR IXYS media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet Category: Triacs
Description: Triac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: ISO247™
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
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7+11.38 EUR
10+9.42 EUR
30+7.99 EUR
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IXTA200N055T2 IXTA200N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD8F02C5009820&compId=IXTA(P)200N055T2.pdf?ci_sign=b09970100e7885edd8a9745146ea46cc0cf0637b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263
Polarisation: unipolar
Reverse recovery time: 49ns
Gate charge: 109nC
On-state resistance: 4.2mΩ
Drain-source voltage: 55V
Drain current: 200A
Power dissipation: 360W
Kind of package: tube
Kind of channel: enhancement
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IXFH28N60P3 IXFH28N60P3 IXYS IXFH(Q)28N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
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9+8.05 EUR
11+6.55 EUR
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MCC132-14io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED783F9BB4B38B42259&compId=MCC132-14io1.pdf?ci_sign=36cce519676ef7befdb41694a085cfd5acae9487 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.04kA
Kind of package: bulk
Semiconductor structure: double series
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MCC132-16io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D5FD28D50DE27&compId=MCC132-16IO1-DTE.pdf?ci_sign=ede7be546f4de8829bef360b7a919176f9b7d2d7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.14V
Load current: 130A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-08io1 MCC132-08io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 0.8kV
Kind of package: bulk
Semiconductor structure: double series
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2+62.03 EUR
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MCC132-12io1 MCC132-12io1 IXYS pVersion=0046&contRep=ZT&docId=E2920706D3E035F19A99005056AB752F&compId=L079.pdf?ci_sign=670f371d8f9338259ca653a886128336d5194817 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: thyristor
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.36V
Max. off-state voltage: 1.2kV
Load current: 130A
Max. forward impulse current: 5.08kA
Semiconductor structure: double series
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2+71 EUR
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MCC132-18IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
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MCC132-14IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86EB5FF3B4F0C0C4&compId=MCC132-14io1B.pdf?ci_sign=075be34417d6ea2469487752d23265a7171d8ffc pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.4kV
Kind of package: bulk
Semiconductor structure: double series
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MCC132-16IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
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MCC132-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
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DSA60C45HB DSA60C45HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9AAE31081D8BF&compId=DSA60C45HB.pdf?ci_sign=c0020e9ae6ab7c51a260e30c95c39c59b755ac0d Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
Power dissipation: 160W
auf Bestellung 300 Stücke:
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17+4.33 EUR
19+3.9 EUR
21+3.45 EUR
30+3.16 EUR
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DSA60C60PB DSA60C60PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9B77B89AF38BF&compId=DSA60C60PB.pdf?ci_sign=973506983f66217d2a25bc2d0322d9632fed9b1d Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
Power dissipation: 175W
Produkt ist nicht verfügbar
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IXFK210N30X3 IXFK210N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB2D57B02A78BF&compId=IXF_210N30X3.pdf?ci_sign=b936bb2c259b202c476c66a13724d25b3b29cb21 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; TO264
Mounting: THT
Polarisation: unipolar
Reverse recovery time: 190ns
Gate charge: 375nC
On-state resistance: 5.5mΩ
Gate-source voltage: ±20V
Drain current: 210A
Drain-source voltage: 300V
Power dissipation: 1.25kW
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO264
Type of transistor: N-MOSFET
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CMA80MT1600NHB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA78234DDB91E00C4&compId=CMA80MT1600NHB.pdf?ci_sign=d55165b06458e6d8f4d3090ec4ae7776c173744c Category: Triacs
Description: Triac; 1.6kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: TO247-3
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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CMA60MT1600NHB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA7822AE67CA100C4&compId=CMA60MT1600NHB.pdf?ci_sign=c7185daf19a3ef746f2ca09df41abf01f190c007 Category: Triacs
Description: Triac; 1.6kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: TO247-3
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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CMA60MT1600NHR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFB01983335E0C4&compId=CMA60MT1600NHR.pdf?ci_sign=bea444f984a1305865b5b5358c10e1731808fe4e Category: Triacs
Description: Triac; 1.6kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: ISO247™
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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IXFB82N60P IXFB82N60P IXYS IXFB82N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
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IXFH36N60P IXFH36N60P IXYS IXFH(K,T)36N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
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IXBH6N170 IXBH6N170 IXYS IXBH6N170_IXBT6N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate charge: 17nC
Turn-on time: 104ns
Turn-off time: 700ns
Collector current: 6A
Gate-emitter voltage: ±20V
Pulsed collector current: 36A
Power dissipation: 75W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
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LDA110STR LDA110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB58A04A7C1EC&compId=LDA110.pdf?ci_sign=368e2f280db3432d5a1624678db96d81054a5ca6 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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MDD312-22N1 MDD312-22N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E01C8331E23E28&compId=MDD312-12N1-DTE.pdf?ci_sign=043306e02e77acc5fdfc8d441dfb8de71669a927 Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
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MDD312-18N1 MDD312-18N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB839C5C18C220C4&compId=MDD312-18N1.pdf?ci_sign=f229946a3c1f909f80b42a167f7d8fe79ddd8ef9 Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 310A
Max. forward impulse current: 10.8kA
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MDD312-16N1 MDD312-16N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E01C8331E23E28&compId=MDD312-12N1-DTE.pdf?ci_sign=043306e02e77acc5fdfc8d441dfb8de71669a927 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Produkt ist nicht verfügbar
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MDD312-12N1 MDD312-12N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E01C8331E23E28&compId=MDD312-12N1-DTE.pdf?ci_sign=043306e02e77acc5fdfc8d441dfb8de71669a927 Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Produkt ist nicht verfügbar
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MCD312-18io1 MCD312-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01C8815261E27&compId=MCD312-18IO1-DTE.pdf?ci_sign=46dd44920e8fc7cd073f39f8e074bbc49191b6f1 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Produkt ist nicht verfügbar
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MCD312-14io1 MCD312-14io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFDCA8EB05EA0C4&compId=MCD312-14io1.pdf?ci_sign=dedd65bbebe3c59db1f5b685833ef89066744455 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Produkt ist nicht verfügbar
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MDD312-14N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8392079BA940C4&compId=MDD312-14N1.pdf?ci_sign=792bda4b8120bd8f2e2ccc7516966de107f48090 Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 310A
Max. forward impulse current: 10.8kA
Produkt ist nicht verfügbar
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MDD312-20N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83AD4FE0FE20C4&compId=MDD312-20N1.pdf?ci_sign=3fd8972fcbd5dd17cb14f503e124146bb1d0a2e8 Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 310A
Max. forward impulse current: 10.8kA
Produkt ist nicht verfügbar
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MCD312-12io1 MCD312-12io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFDC6C3F32440C4&compId=MCD312-12io1.pdf?ci_sign=79086fa485071a4678fa5cfc24230c5f25f91f2a Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Produkt ist nicht verfügbar
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CPC1976Y CPC1976Y IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9958F47397AEAF8BF&compId=CPC1976.pdf?ci_sign=7dca44109e48c92fa27552e2a09f1c4b0605d5cc Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
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15+4.92 EUR
25+4.86 EUR
250+4.43 EUR
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CPC1963G CPC1963G IXYS CPC1963.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Type of relay: solid state
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Operating temperature: -40...85°C
Control current max.: 50mA
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
auf Bestellung 334 Stücke:
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50+6.84 EUR
250+5.49 EUR
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IXFN180N25T IXFN180N25T IXYS IXFN180N25T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 364nC
Reverse recovery time: 200ns
Kind of channel: enhancement
auf Bestellung 279 Stücke:
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5+27.31 EUR
10+26.44 EUR
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MCMA25P1600TA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Kind of package: bulk
Type of semiconductor module: thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Case: TO240AA
Gate current: 55/80mA
Max. forward voltage: 1.52V
Load current: 25A
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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MDMA425P1600PTSF IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9986F31ACAD840D5&compId=MDMA425P1600PTSF.pdf?ci_sign=256148c68a58f15821faeddf355176a8fe2207f6 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: Press-Fit
Mechanical mounting: screw
Case: SimBus F
Load current: 425A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
Produkt ist nicht verfügbar
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IXDN604PI IXDN604PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC684A2EAF820&compId=IXD_604.pdf?ci_sign=5212fc240f089b60cb86612e9306367e8987585c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 238 Stücke:
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36+2 EUR
50+1.46 EUR
53+1.36 EUR
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IXDN604SIA IXDN604SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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43+1.69 EUR
50+1.46 EUR
Mindestbestellmenge: 43
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IXDN604SI IXDN604SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 879 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.19 EUR
50+2.7 EUR
100+2.52 EUR
200+2.35 EUR
300+2.3 EUR
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IXDN604SIATR IXDN604SIATR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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IXDN602D2TR IXDN602D2TR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.52 EUR
44+1.63 EUR
52+1.39 EUR
59+1.23 EUR
100+1.1 EUR
250+0.96 EUR
500+0.94 EUR
Mindestbestellmenge: 29
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CPC2317N CPC2317N.pdf
CPC2317N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Mounting: SMT
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Kind of output: MOSFET
Max. operating current: 120mA
On-state resistance: 16Ω
Case: SO8
Insulation voltage: 1.5kV
auf Bestellung 577 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.16 EUR
36+2 EUR
38+1.9 EUR
50+1.8 EUR
100+1.72 EUR
150+1.7 EUR
Mindestbestellmenge: 34
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IXTP34N65X2 IXT_34N65X2.pdf
IXTP34N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
Produkt ist nicht verfügbar
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IXFN60N80P description IXFN60N80P.pdf
IXFN60N80P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 53A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.14Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 250nC
Reverse recovery time: 250ns
Kind of channel: enhancement
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+45.62 EUR
Mindestbestellmenge: 2
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IXFX300N20X3 IXF_300N20X3.pdf 200VProductBrief.pdf
IXFX300N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+34.41 EUR
10+31.4 EUR
Mindestbestellmenge: 3
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MCD312-16io1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4DA694FFC2469&compId=MCC312-12IO1.pdf?ci_sign=3f968db46db8a1b8ba38583aacd1605eca7d74da
MCD312-16io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Produkt ist nicht verfügbar
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IXFT24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91
IXFT24N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTP100N04T2 IXTA(P)100N04T2.pdf
IXTP100N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
On-state resistance: 7mΩ
Drain current: 100A
Drain-source voltage: 40V
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.02 EUR
38+1.89 EUR
50+1.66 EUR
100+1.6 EUR
Mindestbestellmenge: 24
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IXTY2N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89C4F8CE3158BF&compId=IXTP(Y)2N65X2.pdf?ci_sign=a1b44b73e461987c86a1219b0eef051f39a61060
IXTY2N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
Produkt ist nicht verfügbar
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IXFH26N60P IXFH26N60P.pdf
IXFH26N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.2 EUR
9+8.71 EUR
10+7.38 EUR
Mindestbestellmenge: 8
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CPC1117NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20A20C7&compId=CPC1117N.pdf?ci_sign=18d490086b78a6320fb704976e77bbb11aadfa34
CPC1117NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXFK64N60P3 IXF_64N60P3.pdf
IXFK64N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.04 EUR
10+13.69 EUR
25+12.87 EUR
Mindestbestellmenge: 5
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IXTQ64N25P IXTQ64N25P-DTE.pdf
IXTQ64N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO3P
Mounting: THT
Power dissipation: 400W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: PolarHT™
Case: TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 200ns
On-state resistance: 49mΩ
Drain current: 64A
Produkt ist nicht verfügbar
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IXKK85N60C pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC765820&compId=IXKK85N60C.pdf?ci_sign=45f48f1ec514485461df7d7e3f166714c6045391
IXKK85N60C
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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IXTA120P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7
IXTA120P065T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO263
Technology: TrenchP™
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.86 EUR
13+5.68 EUR
50+4.69 EUR
Mindestbestellmenge: 11
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IXFK44N50P IXFK44N50P.pdf
IXFK44N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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VHF25-08IO7 VHF25-ser.pdf
VHF25-08IO7
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 32A
Max. forward impulse current: 180A
Gate current: 25/50mA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.79 EUR
5+16.6 EUR
10+14.93 EUR
Mindestbestellmenge: 4
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MDA72-16N1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MDA72-16N1B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 1.6kV; If: 113Ax2; TO240AA
Max. forward impulse current: 1.54kA
Semiconductor structure: common anode; double
Case: TO240AA
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.6V
Load current: 113A x2
Type of semiconductor module: diode
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+45.8 EUR
3+40.53 EUR
10+36.36 EUR
Mindestbestellmenge: 2
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IXBH20N300 littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc
IXBH20N300
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 64ns
Gate charge: 105nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Power dissipation: 250W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
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DPF240X400NA pVersion=0046&contRep=ZT&docId=005056AB90B41EDA92966DC56E4A20C4&compId=DPF240X400NA.pdf?ci_sign=6fc4d0c4dfe81c07d0f6501815c460a2ef5b3645
DPF240X400NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Max. forward voltage: 1.06V
Max. load current: 120A
Load current: 120A x2
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.2kA
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+49.68 EUR
3+47.88 EUR
Mindestbestellmenge: 2
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IXFP6N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D454445020B820&compId=IXFA(H%2CP)6N120P.pdf?ci_sign=943297d656831e25efec803b2ad2b28ea7b42a34
IXFP6N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 92nC
Power dissipation: 250W
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.37 EUR
8+9.7 EUR
10+8.52 EUR
25+7.61 EUR
Mindestbestellmenge: 7
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CMA80MT1600NHR media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet
CMA80MT1600NHR
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: ISO247™
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.38 EUR
10+9.42 EUR
30+7.99 EUR
Mindestbestellmenge: 7
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IXTA200N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD8F02C5009820&compId=IXTA(P)200N055T2.pdf?ci_sign=b09970100e7885edd8a9745146ea46cc0cf0637b
IXTA200N055T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263
Polarisation: unipolar
Reverse recovery time: 49ns
Gate charge: 109nC
On-state resistance: 4.2mΩ
Drain-source voltage: 55V
Drain current: 200A
Power dissipation: 360W
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFH28N60P3 IXFH(Q)28N60P3.pdf
IXFH28N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.05 EUR
11+6.55 EUR
13+5.91 EUR
Mindestbestellmenge: 9
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MCC132-14io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED783F9BB4B38B42259&compId=MCC132-14io1.pdf?ci_sign=36cce519676ef7befdb41694a085cfd5acae9487 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.04kA
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-16io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D5FD28D50DE27&compId=MCC132-16IO1-DTE.pdf?ci_sign=ede7be546f4de8829bef360b7a919176f9b7d2d7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.14V
Load current: 130A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC132-08io1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCC132-08io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 0.8kV
Kind of package: bulk
Semiconductor structure: double series
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+62.03 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MCC132-12io1 pVersion=0046&contRep=ZT&docId=E2920706D3E035F19A99005056AB752F&compId=L079.pdf?ci_sign=670f371d8f9338259ca653a886128336d5194817 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCC132-12io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: thyristor
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.36V
Max. off-state voltage: 1.2kV
Load current: 130A
Max. forward impulse current: 5.08kA
Semiconductor structure: double series
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+71 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MCC132-18IO1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC132-14IO1B pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86EB5FF3B4F0C0C4&compId=MCC132-14io1B.pdf?ci_sign=075be34417d6ea2469487752d23265a7171d8ffc pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.4kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC132-16IO1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCC132-18io1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSA60C45HB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9AAE31081D8BF&compId=DSA60C45HB.pdf?ci_sign=c0020e9ae6ab7c51a260e30c95c39c59b755ac0d
DSA60C45HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
Power dissipation: 160W
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.33 EUR
19+3.9 EUR
21+3.45 EUR
30+3.16 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
DSA60C60PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9B77B89AF38BF&compId=DSA60C60PB.pdf?ci_sign=973506983f66217d2a25bc2d0322d9632fed9b1d
DSA60C60PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
Power dissipation: 175W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK210N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB2D57B02A78BF&compId=IXF_210N30X3.pdf?ci_sign=b936bb2c259b202c476c66a13724d25b3b29cb21 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFK210N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; TO264
Mounting: THT
Polarisation: unipolar
Reverse recovery time: 190ns
Gate charge: 375nC
On-state resistance: 5.5mΩ
Gate-source voltage: ±20V
Drain current: 210A
Drain-source voltage: 300V
Power dissipation: 1.25kW
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO264
Type of transistor: N-MOSFET
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CMA80MT1600NHB pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA78234DDB91E00C4&compId=CMA80MT1600NHB.pdf?ci_sign=d55165b06458e6d8f4d3090ec4ae7776c173744c
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: TO247-3
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMA60MT1600NHB pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA7822AE67CA100C4&compId=CMA60MT1600NHB.pdf?ci_sign=c7185daf19a3ef746f2ca09df41abf01f190c007
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: TO247-3
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMA60MT1600NHR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFB01983335E0C4&compId=CMA60MT1600NHR.pdf?ci_sign=bea444f984a1305865b5b5358c10e1731808fe4e
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: ISO247™
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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IXFB82N60P IXFB82N60P.pdf
IXFB82N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+31.59 EUR
5+28.31 EUR
25+27.9 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFH36N60P IXFH(K,T)36N60P.pdf
IXFH36N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.67 EUR
Mindestbestellmenge: 8
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IXBH6N170 IXBH6N170_IXBT6N170.pdf
IXBH6N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate charge: 17nC
Turn-on time: 104ns
Turn-off time: 700ns
Collector current: 6A
Gate-emitter voltage: ±20V
Pulsed collector current: 36A
Power dissipation: 75W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LDA110STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB58A04A7C1EC&compId=LDA110.pdf?ci_sign=368e2f280db3432d5a1624678db96d81054a5ca6
LDA110STR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-22N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E01C8331E23E28&compId=MDD312-12N1-DTE.pdf?ci_sign=043306e02e77acc5fdfc8d441dfb8de71669a927
MDD312-22N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+181.75 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-18N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB839C5C18C220C4&compId=MDD312-18N1.pdf?ci_sign=f229946a3c1f909f80b42a167f7d8fe79ddd8ef9
MDD312-18N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 310A
Max. forward impulse current: 10.8kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-16N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E01C8331E23E28&compId=MDD312-12N1-DTE.pdf?ci_sign=043306e02e77acc5fdfc8d441dfb8de71669a927
MDD312-16N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-12N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E01C8331E23E28&compId=MDD312-12N1-DTE.pdf?ci_sign=043306e02e77acc5fdfc8d441dfb8de71669a927
MDD312-12N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD312-18io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01C8815261E27&compId=MCD312-18IO1-DTE.pdf?ci_sign=46dd44920e8fc7cd073f39f8e074bbc49191b6f1
MCD312-18io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD312-14io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFDCA8EB05EA0C4&compId=MCD312-14io1.pdf?ci_sign=dedd65bbebe3c59db1f5b685833ef89066744455
MCD312-14io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-14N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8392079BA940C4&compId=MDD312-14N1.pdf?ci_sign=792bda4b8120bd8f2e2ccc7516966de107f48090
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 310A
Max. forward impulse current: 10.8kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-20N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83AD4FE0FE20C4&compId=MDD312-20N1.pdf?ci_sign=3fd8972fcbd5dd17cb14f503e124146bb1d0a2e8
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 310A
Max. forward impulse current: 10.8kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD312-12io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFDC6C3F32440C4&compId=MCD312-12io1.pdf?ci_sign=79086fa485071a4678fa5cfc24230c5f25f91f2a
MCD312-12io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC1976Y pVersion=0046&contRep=ZT&docId=005056AB82531EE9958F47397AEAF8BF&compId=CPC1976.pdf?ci_sign=7dca44109e48c92fa27552e2a09f1c4b0605d5cc
CPC1976Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
auf Bestellung 494 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.92 EUR
25+4.86 EUR
250+4.43 EUR
Mindestbestellmenge: 15
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CPC1963G CPC1963.pdf
CPC1963G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Type of relay: solid state
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Operating temperature: -40...85°C
Control current max.: 50mA
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
auf Bestellung 334 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.42 EUR
50+6.84 EUR
250+5.49 EUR
Mindestbestellmenge: 7
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IXFN180N25T IXFN180N25T.pdf
IXFN180N25T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 364nC
Reverse recovery time: 200ns
Kind of channel: enhancement
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.09 EUR
5+27.31 EUR
10+26.44 EUR
Mindestbestellmenge: 3
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MCMA25P1600TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Kind of package: bulk
Type of semiconductor module: thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Case: TO240AA
Gate current: 55/80mA
Max. forward voltage: 1.52V
Load current: 25A
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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MDMA425P1600PTSF pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9986F31ACAD840D5&compId=MDMA425P1600PTSF.pdf?ci_sign=256148c68a58f15821faeddf355176a8fe2207f6
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: Press-Fit
Mechanical mounting: screw
Case: SimBus F
Load current: 425A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
Produkt ist nicht verfügbar
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IXDN604PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC684A2EAF820&compId=IXD_604.pdf?ci_sign=5212fc240f089b60cb86612e9306367e8987585c
IXDN604PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2 EUR
50+1.46 EUR
53+1.36 EUR
Mindestbestellmenge: 36
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IXDN604SIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDN604SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 626 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.69 EUR
50+1.46 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
IXDN604SI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDN604SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 879 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.19 EUR
50+2.7 EUR
100+2.52 EUR
200+2.35 EUR
300+2.3 EUR
Mindestbestellmenge: 23
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IXDN604SIATR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
IXDN604SIATR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDN602D2TR pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDN602D2TR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.52 EUR
44+1.63 EUR
52+1.39 EUR
59+1.23 EUR
100+1.1 EUR
250+0.96 EUR
500+0.94 EUR
Mindestbestellmenge: 29
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