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IXFP6N120P IXFP6N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D454445020B820&compId=IXFA(H%2CP)6N120P.pdf?ci_sign=943297d656831e25efec803b2ad2b28ea7b42a34 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 92nC
Power dissipation: 250W
auf Bestellung 43 Stücke:
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7+11.2 EUR
9+8.08 EUR
10+7.64 EUR
Mindestbestellmenge: 7
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CMA80MT1600NHR CMA80MT1600NHR IXYS media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet Category: Triacs
Description: Triac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: ISO247™
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
auf Bestellung 43 Stücke:
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7+11.38 EUR
10+9.42 EUR
30+7.99 EUR
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IXTA200N055T2 IXTA200N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD8F02C5009820&compId=IXTA(P)200N055T2.pdf?ci_sign=b09970100e7885edd8a9745146ea46cc0cf0637b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263
Polarisation: unipolar
Reverse recovery time: 49ns
Gate charge: 109nC
On-state resistance: 4.2mΩ
Drain-source voltage: 55V
Drain current: 200A
Power dissipation: 360W
Kind of package: tube
Kind of channel: enhancement
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IXFH28N60P3 IXFH28N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285A2A90AE15820&compId=IXFH(Q)28N60P3.pdf?ci_sign=0f34ebb36ef205574a8cc03b1e646bbbf9a5d93c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 509 Stücke:
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9+8.05 EUR
11+6.55 EUR
13+5.91 EUR
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IXTH3N150 IXTH3N150 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494D3820&compId=IXTH3N150.pdf?ci_sign=9f26c436d8a2db1056604f21919c428f65c6491b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 38.6nC
Reverse recovery time: 900ns
Drain current: 3A
Power dissipation: 250W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MCC132-14io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED783F9BB4B38B42259&compId=MCC132-14io1.pdf?ci_sign=36cce519676ef7befdb41694a085cfd5acae9487 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.04kA
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-16io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D5FD28D50DE27&compId=MCC132-16IO1-DTE.pdf?ci_sign=ede7be546f4de8829bef360b7a919176f9b7d2d7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.14V
Load current: 130A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-08io1 MCC132-08io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 0.8kV
Kind of package: bulk
Semiconductor structure: double series
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2+62.03 EUR
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MCC132-12io1 MCC132-12io1 IXYS pVersion=0046&contRep=ZT&docId=E2920706D3E035F19A99005056AB752F&compId=L079.pdf?ci_sign=670f371d8f9338259ca653a886128336d5194817 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: thyristor
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.36V
Max. off-state voltage: 1.2kV
Load current: 130A
Max. forward impulse current: 5.08kA
Semiconductor structure: double series
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2+71 EUR
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MCC132-18IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-14IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86EB5FF3B4F0C0C4&compId=MCC132-14io1B.pdf?ci_sign=075be34417d6ea2469487752d23265a7171d8ffc pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.4kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-16IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
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MCC132-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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DSA60C45HB DSA60C45HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9AAE31081D8BF&compId=DSA60C45HB.pdf?ci_sign=c0020e9ae6ab7c51a260e30c95c39c59b755ac0d Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
Power dissipation: 160W
auf Bestellung 300 Stücke:
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17+4.33 EUR
19+3.9 EUR
21+3.45 EUR
30+3.16 EUR
Mindestbestellmenge: 17
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DSA60C60PB DSA60C60PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9B77B89AF38BF&compId=DSA60C60PB.pdf?ci_sign=973506983f66217d2a25bc2d0322d9632fed9b1d Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
Power dissipation: 175W
Produkt ist nicht verfügbar
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IXFK210N30X3 IXFK210N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB2D57B02A78BF&compId=IXF_210N30X3.pdf?ci_sign=b936bb2c259b202c476c66a13724d25b3b29cb21 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; TO264
Mounting: THT
Polarisation: unipolar
Reverse recovery time: 190ns
Gate charge: 375nC
On-state resistance: 5.5mΩ
Gate-source voltage: ±20V
Drain current: 210A
Drain-source voltage: 300V
Power dissipation: 1.25kW
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO264
Type of transistor: N-MOSFET
auf Bestellung 1 Stücke:
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1+71.5 EUR
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CMA80MT1600NHB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA78234DDB91E00C4&compId=CMA80MT1600NHB.pdf?ci_sign=d55165b06458e6d8f4d3090ec4ae7776c173744c Category: Triacs
Description: Triac; 1.6kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: TO247-3
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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CMA60MT1600NHB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA7822AE67CA100C4&compId=CMA60MT1600NHB.pdf?ci_sign=c7185daf19a3ef746f2ca09df41abf01f190c007 Category: Triacs
Description: Triac; 1.6kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: TO247-3
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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CMA60MT1600NHR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFB01983335E0C4&compId=CMA60MT1600NHR.pdf?ci_sign=bea444f984a1305865b5b5358c10e1731808fe4e Category: Triacs
Description: Triac; 1.6kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: ISO247™
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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IXFB82N60P IXFB82N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED483D4DA614A18&compId=IXFB82N60P.pdf?ci_sign=dd1a9bcc358e003653cce67b74f6b719913560a2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 100 Stücke:
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3+31.59 EUR
5+28.31 EUR
25+27.9 EUR
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DSEC240-04A DSEC240-04A IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8EE4C0897461E0D3&compId=DSEC240-04A.pdf?ci_sign=fa2bfa7fb181c32a0e1f65011cdbef81fa691611 description Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 120Ax2; SOT227UI; Ufmax: 1V
Semiconductor structure: common cathode
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227UI
Max. forward voltage: 1V
Max. off-state voltage: 0.4kV
Max. load current: 120A
Load current: 120A x2
Max. forward impulse current: 2kA
Produkt ist nicht verfügbar
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IXFT120N30X3HV IXFT120N30X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBD406B0DCD8BF&compId=IXF_120N30X3_HV.pdf?ci_sign=44c2594b70f8a430a588605e95888b402a9a745c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Mounting: SMD
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO268
Polarisation: unipolar
Gate charge: 170nC
Reverse recovery time: 145ns
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 735W
Kind of package: tube
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4+18.5 EUR
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MDD26-12N1B MDD26-12N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7DFA740E87FDE28&compId=MDD26-12N1B-DTE.pdf?ci_sign=294202a7f37e66c7e53bb6d1714460469e1f9ac7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V
Electrical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Case: TO240AA
Max. forward voltage: 1.05V
Load current: 36A
Max. load current: 60A
Max. forward impulse current: 555A
Max. off-state voltage: 1.2kV
auf Bestellung 13 Stücke:
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3+24.74 EUR
4+23.39 EUR
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IXFH36N60P IXFH36N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC1E5B4133F820&compId=IXFH(K%2CT)36N60P.pdf?ci_sign=f303cae51d0f22faf44d1bff5e4ef775e61b58ec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 285 Stücke:
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8+9.67 EUR
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IXBH6N170 IXBH6N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1B474D794F8BF&compId=IXBH6N170_IXBT6N170.pdf?ci_sign=11ff0739ef8a82a3156ed9b2978a4d7167a1a158 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate charge: 17nC
Turn-on time: 104ns
Turn-off time: 700ns
Collector current: 6A
Gate-emitter voltage: ±20V
Pulsed collector current: 36A
Power dissipation: 75W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
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IXTH260N055T2 IXTH260N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B9183B820&compId=IXTH260N055T2.pdf?ci_sign=37da9bdeca5f2967218f2665567ee32f4d9d1a34 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns
Case: TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTH360N055T2 IXTH360N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF1C858E7B820&compId=IXTH(T)360N055T2.pdf?ci_sign=23fb805fbce6e75a57fc84bdd4dfce3194e210b5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 78ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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LDA110STR LDA110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB58A04A7C1EC&compId=LDA110.pdf?ci_sign=368e2f280db3432d5a1624678db96d81054a5ca6 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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MDD312-22N1 MDD312-22N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E01C8331E23E28&compId=MDD312-12N1-DTE.pdf?ci_sign=043306e02e77acc5fdfc8d441dfb8de71669a927 Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
auf Bestellung 1 Stücke:
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1+181.75 EUR
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MDD312-18N1 MDD312-18N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB839C5C18C220C4&compId=MDD312-18N1.pdf?ci_sign=f229946a3c1f909f80b42a167f7d8fe79ddd8ef9 Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 310A
Max. forward impulse current: 10.8kA
Produkt ist nicht verfügbar
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MDD312-16N1 MDD312-16N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E01C8331E23E28&compId=MDD312-12N1-DTE.pdf?ci_sign=043306e02e77acc5fdfc8d441dfb8de71669a927 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Produkt ist nicht verfügbar
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MDD312-12N1 MDD312-12N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E01C8331E23E28&compId=MDD312-12N1-DTE.pdf?ci_sign=043306e02e77acc5fdfc8d441dfb8de71669a927 Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Produkt ist nicht verfügbar
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MCD312-18io1 MCD312-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01C8815261E27&compId=MCD312-18IO1-DTE.pdf?ci_sign=46dd44920e8fc7cd073f39f8e074bbc49191b6f1 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Produkt ist nicht verfügbar
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MCD312-14io1 MCD312-14io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFDCA8EB05EA0C4&compId=MCD312-14io1.pdf?ci_sign=dedd65bbebe3c59db1f5b685833ef89066744455 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Produkt ist nicht verfügbar
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MDD312-14N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8392079BA940C4&compId=MDD312-14N1.pdf?ci_sign=792bda4b8120bd8f2e2ccc7516966de107f48090 Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 310A
Max. forward impulse current: 10.8kA
Produkt ist nicht verfügbar
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MDD312-20N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83AD4FE0FE20C4&compId=MDD312-20N1.pdf?ci_sign=3fd8972fcbd5dd17cb14f503e124146bb1d0a2e8 Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 310A
Max. forward impulse current: 10.8kA
Produkt ist nicht verfügbar
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MCD312-12io1 MCD312-12io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFDC6C3F32440C4&compId=MCD312-12io1.pdf?ci_sign=79086fa485071a4678fa5cfc24230c5f25f91f2a Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Produkt ist nicht verfügbar
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CPC1976Y CPC1976Y IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9958F47397AEAF8BF&compId=CPC1976.pdf?ci_sign=7dca44109e48c92fa27552e2a09f1c4b0605d5cc Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
auf Bestellung 494 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.92 EUR
25+4.86 EUR
250+4.43 EUR
Mindestbestellmenge: 15
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CPC1393GR CPC1393GR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Max. operating current: 90mA
On-state resistance: 50Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 5kV
Type of relay: solid state
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Body dimensions: 4.57x6.35x3.3mm
auf Bestellung 675 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.5 EUR
31+2.32 EUR
35+2.09 EUR
50+1.99 EUR
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CPC1963G CPC1963G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81B80C7&compId=CPC1963.pdf?ci_sign=2da1d21c69f1322b9b80590b037dcf21bef53c98 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Mounting: THT
Operating temperature: -40...85°C
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
auf Bestellung 364 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.42 EUR
50+6.84 EUR
250+5.49 EUR
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MDO600-16N1 MDO600-16N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E0B6A8D9091E28&compId=MDO600-16N1-DTE.pdf?ci_sign=85daf70db78e274567cdc548301bd5844612f039 Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 1.01V
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Electrical mounting: screw
Case: Y1-CU
Max. forward voltage: 1.01V
Load current: 560A
Max. forward impulse current: 12.8kA
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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IXFN180N25T IXFN180N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C6EEE88A158BF&compId=IXFN180N25T.pdf?ci_sign=93b68cf1b62ba6ba3001a31573d6dc6b40bde40e Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 364nC
Kind of channel: enhancement
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
3+32.09 EUR
5+27.31 EUR
10+26.44 EUR
Mindestbestellmenge: 3
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MCMA25P1600TA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Kind of package: bulk
Type of semiconductor module: thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Case: TO240AA
Gate current: 55/80mA
Max. forward voltage: 1.52V
Load current: 25A
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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MDMA425P1600PTSF IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9986F31ACAD840D5&compId=MDMA425P1600PTSF.pdf?ci_sign=256148c68a58f15821faeddf355176a8fe2207f6 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: Press-Fit
Mechanical mounting: screw
Case: SimBus F
Load current: 425A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
Produkt ist nicht verfügbar
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VUO52-16NO1 VUO52-16NO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFC7C2484CF820&compId=VUO52-16NO1.pdf?ci_sign=cb3d514fb98f76504c6323abae3ecd47f2564f93 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 0.83V
Leads: connectors
Leads dimensions: 2x0.5mm
Case: V1-A-Pack
Mechanical mounting: screw
auf Bestellung 10 Stücke:
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3+34.56 EUR
5+33.46 EUR
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IXDN604PI IXDN604PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC684A2EAF820&compId=IXD_604.pdf?ci_sign=5212fc240f089b60cb86612e9306367e8987585c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 238 Stücke:
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36+2 EUR
50+1.46 EUR
53+1.36 EUR
Mindestbestellmenge: 36
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IXDN604SIA IXDN604SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 626 Stücke:
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43+1.69 EUR
50+1.46 EUR
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IXDN604SI IXDN604SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 879 Stücke:
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23+3.19 EUR
50+2.7 EUR
100+2.52 EUR
200+2.35 EUR
300+2.3 EUR
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IXDN604SIATR IXDN604SIATR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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IXDN602D2TR IXDN602D2TR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 2000 Stücke:
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29+2.52 EUR
44+1.63 EUR
52+1.39 EUR
59+1.23 EUR
100+1.1 EUR
250+0.96 EUR
500+0.94 EUR
Mindestbestellmenge: 29
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IXTN110N20L2 IXTN110N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8D4C2C0D3B820&compId=IXTN110N20L2.pdf?ci_sign=22d1ef7a7256a11bcc8df888639ad4005a52d7b3 Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Technology: Linear L2™
Reverse recovery time: 420ns
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXTK110N20L2 IXTK110N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9939600E0EFF298BF&compId=IXT_110N20L2.pdf?ci_sign=2efcd7c71b9a3d0ca4fa8423b4cac407d61b052b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
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OMA160 OMA160 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2699C0C7&compId=OMA160.pdf?ci_sign=81480a08d275770b533880aac2266f2ea5be6c1b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Mounting: THT
Insulation voltage: 3.75kV
Case: DIP6
Turn-on time: 125µs
Turn-off time: 125µs
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.19 EUR
17+4.25 EUR
25+3.69 EUR
Mindestbestellmenge: 14
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CPC1030NTR CPC1030NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75BE0C7&compId=CPC1030N.pdf?ci_sign=f5306a3547ebea4ac3441d82e07f700914fb2e7d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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CPC1706Y CPC1706Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4927C8677A0C7&compId=CPC1706.pdf?ci_sign=9ed605bb3e0989318f6e250694ab09cd9e3ff237 Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 4A
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 90mΩ
Mounting: THT
Case: SOP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.73 EUR
24+3.1 EUR
25+2.89 EUR
Mindestbestellmenge: 20
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VHFD37-16IO1 VHFD37-16IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F20DBFE661D820&compId=VHFD37-ser.pdf?ci_sign=2d812ba971aecf8861ab1d3dd43e94b87114da19 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
2+42.04 EUR
10+39.04 EUR
Mindestbestellmenge: 2
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PLA191S PLA191S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.73 EUR
100+4.38 EUR
Mindestbestellmenge: 13
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DSEI30-10A DSEI30-10A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD568A65B4938BF&compId=DSEI30-10A.pdf?ci_sign=852498fdf79c980b238d3a278082ea33068754bc description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 185A
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 138W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.83 EUR
Mindestbestellmenge: 19
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IXFH120N20P IXFH120N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9869832FD820&compId=IXFH(K)120N20P.pdf?ci_sign=ab9ee0cda8be66ad18abdb1fb39f266891be68ee Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Case: TO247-3
Mounting: THT
Gate charge: 152nC
Reverse recovery time: 100ns
On-state resistance: 22mΩ
Drain current: 120A
Power dissipation: 714W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Type of transistor: N-MOSFET
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
6+14.09 EUR
7+11.34 EUR
10+10.51 EUR
Mindestbestellmenge: 6
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CPC3701CTR CPC3701CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE7919FFA760F104746&compId=CPC3701.pdf?ci_sign=3b686c50781704a72018b86754c7a8d41bba5ce4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Mounting: SMD
Kind of channel: depletion
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.6A
On-state resistance: 1Ω
Power dissipation: 1.1W
Gate-source voltage: ±15V
Drain-source voltage: 60V
Case: SOT89
auf Bestellung 330 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
89+0.8 EUR
140+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 61
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IXFP6N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D454445020B820&compId=IXFA(H%2CP)6N120P.pdf?ci_sign=943297d656831e25efec803b2ad2b28ea7b42a34
IXFP6N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 92nC
Power dissipation: 250W
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.2 EUR
9+8.08 EUR
10+7.64 EUR
Mindestbestellmenge: 7
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CMA80MT1600NHR media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet
CMA80MT1600NHR
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: ISO247™
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.38 EUR
10+9.42 EUR
30+7.99 EUR
Mindestbestellmenge: 7
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IXTA200N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD8F02C5009820&compId=IXTA(P)200N055T2.pdf?ci_sign=b09970100e7885edd8a9745146ea46cc0cf0637b
IXTA200N055T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263
Polarisation: unipolar
Reverse recovery time: 49ns
Gate charge: 109nC
On-state resistance: 4.2mΩ
Drain-source voltage: 55V
Drain current: 200A
Power dissipation: 360W
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFH28N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285A2A90AE15820&compId=IXFH(Q)28N60P3.pdf?ci_sign=0f34ebb36ef205574a8cc03b1e646bbbf9a5d93c
IXFH28N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 509 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.05 EUR
11+6.55 EUR
13+5.91 EUR
Mindestbestellmenge: 9
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IXTH3N150 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494D3820&compId=IXTH3N150.pdf?ci_sign=9f26c436d8a2db1056604f21919c428f65c6491b
IXTH3N150
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 38.6nC
Reverse recovery time: 900ns
Drain current: 3A
Power dissipation: 250W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MCC132-14io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED783F9BB4B38B42259&compId=MCC132-14io1.pdf?ci_sign=36cce519676ef7befdb41694a085cfd5acae9487 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.04kA
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-16io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D5FD28D50DE27&compId=MCC132-16IO1-DTE.pdf?ci_sign=ede7be546f4de8829bef360b7a919176f9b7d2d7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.14V
Load current: 130A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-08io1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCC132-08io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 0.8kV
Kind of package: bulk
Semiconductor structure: double series
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+62.03 EUR
Mindestbestellmenge: 2
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MCC132-12io1 pVersion=0046&contRep=ZT&docId=E2920706D3E035F19A99005056AB752F&compId=L079.pdf?ci_sign=670f371d8f9338259ca653a886128336d5194817 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCC132-12io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: thyristor
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.36V
Max. off-state voltage: 1.2kV
Load current: 130A
Max. forward impulse current: 5.08kA
Semiconductor structure: double series
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+71 EUR
Mindestbestellmenge: 2
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MCC132-18IO1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-14IO1B pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86EB5FF3B4F0C0C4&compId=MCC132-14io1B.pdf?ci_sign=075be34417d6ea2469487752d23265a7171d8ffc pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.4kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-16IO1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC132-18io1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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DSA60C45HB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9AAE31081D8BF&compId=DSA60C45HB.pdf?ci_sign=c0020e9ae6ab7c51a260e30c95c39c59b755ac0d
DSA60C45HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
Power dissipation: 160W
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.33 EUR
19+3.9 EUR
21+3.45 EUR
30+3.16 EUR
Mindestbestellmenge: 17
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DSA60C60PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9B77B89AF38BF&compId=DSA60C60PB.pdf?ci_sign=973506983f66217d2a25bc2d0322d9632fed9b1d
DSA60C60PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
Power dissipation: 175W
Produkt ist nicht verfügbar
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IXFK210N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB2D57B02A78BF&compId=IXF_210N30X3.pdf?ci_sign=b936bb2c259b202c476c66a13724d25b3b29cb21 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFK210N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; TO264
Mounting: THT
Polarisation: unipolar
Reverse recovery time: 190ns
Gate charge: 375nC
On-state resistance: 5.5mΩ
Gate-source voltage: ±20V
Drain current: 210A
Drain-source voltage: 300V
Power dissipation: 1.25kW
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO264
Type of transistor: N-MOSFET
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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CMA80MT1600NHB pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA78234DDB91E00C4&compId=CMA80MT1600NHB.pdf?ci_sign=d55165b06458e6d8f4d3090ec4ae7776c173744c
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: TO247-3
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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CMA60MT1600NHB pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA7822AE67CA100C4&compId=CMA60MT1600NHB.pdf?ci_sign=c7185daf19a3ef746f2ca09df41abf01f190c007
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: TO247-3
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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CMA60MT1600NHR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFB01983335E0C4&compId=CMA60MT1600NHR.pdf?ci_sign=bea444f984a1305865b5b5358c10e1731808fe4e
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: ISO247™
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
Produkt ist nicht verfügbar
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IXFB82N60P pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED483D4DA614A18&compId=IXFB82N60P.pdf?ci_sign=dd1a9bcc358e003653cce67b74f6b719913560a2
IXFB82N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+31.59 EUR
5+28.31 EUR
25+27.9 EUR
Mindestbestellmenge: 3
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DSEC240-04A description pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8EE4C0897461E0D3&compId=DSEC240-04A.pdf?ci_sign=fa2bfa7fb181c32a0e1f65011cdbef81fa691611
DSEC240-04A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 120Ax2; SOT227UI; Ufmax: 1V
Semiconductor structure: common cathode
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227UI
Max. forward voltage: 1V
Max. off-state voltage: 0.4kV
Max. load current: 120A
Load current: 120A x2
Max. forward impulse current: 2kA
Produkt ist nicht verfügbar
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IXFT120N30X3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBD406B0DCD8BF&compId=IXF_120N30X3_HV.pdf?ci_sign=44c2594b70f8a430a588605e95888b402a9a745c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFT120N30X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Mounting: SMD
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO268
Polarisation: unipolar
Gate charge: 170nC
Reverse recovery time: 145ns
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 735W
Kind of package: tube
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.5 EUR
Mindestbestellmenge: 4
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MDD26-12N1B pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7DFA740E87FDE28&compId=MDD26-12N1B-DTE.pdf?ci_sign=294202a7f37e66c7e53bb6d1714460469e1f9ac7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MDD26-12N1B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V
Electrical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
Mechanical mounting: screw
Case: TO240AA
Max. forward voltage: 1.05V
Load current: 36A
Max. load current: 60A
Max. forward impulse current: 555A
Max. off-state voltage: 1.2kV
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.74 EUR
4+23.39 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFH36N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC1E5B4133F820&compId=IXFH(K%2CT)36N60P.pdf?ci_sign=f303cae51d0f22faf44d1bff5e4ef775e61b58ec
IXFH36N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.67 EUR
Mindestbestellmenge: 8
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IXBH6N170 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1B474D794F8BF&compId=IXBH6N170_IXBT6N170.pdf?ci_sign=11ff0739ef8a82a3156ed9b2978a4d7167a1a158
IXBH6N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate charge: 17nC
Turn-on time: 104ns
Turn-off time: 700ns
Collector current: 6A
Gate-emitter voltage: ±20V
Pulsed collector current: 36A
Power dissipation: 75W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
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IXTH260N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B9183B820&compId=IXTH260N055T2.pdf?ci_sign=37da9bdeca5f2967218f2665567ee32f4d9d1a34
IXTH260N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns
Case: TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTH360N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF1C858E7B820&compId=IXTH(T)360N055T2.pdf?ci_sign=23fb805fbce6e75a57fc84bdd4dfce3194e210b5
IXTH360N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 78ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LDA110STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB58A04A7C1EC&compId=LDA110.pdf?ci_sign=368e2f280db3432d5a1624678db96d81054a5ca6
LDA110STR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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MDD312-22N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E01C8331E23E28&compId=MDD312-12N1-DTE.pdf?ci_sign=043306e02e77acc5fdfc8d441dfb8de71669a927
MDD312-22N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+181.75 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-18N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB839C5C18C220C4&compId=MDD312-18N1.pdf?ci_sign=f229946a3c1f909f80b42a167f7d8fe79ddd8ef9
MDD312-18N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 310A
Max. forward impulse current: 10.8kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-16N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E01C8331E23E28&compId=MDD312-12N1-DTE.pdf?ci_sign=043306e02e77acc5fdfc8d441dfb8de71669a927
MDD312-16N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-12N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E01C8331E23E28&compId=MDD312-12N1-DTE.pdf?ci_sign=043306e02e77acc5fdfc8d441dfb8de71669a927
MDD312-12N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD312-18io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01C8815261E27&compId=MCD312-18IO1-DTE.pdf?ci_sign=46dd44920e8fc7cd073f39f8e074bbc49191b6f1
MCD312-18io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD312-14io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFDCA8EB05EA0C4&compId=MCD312-14io1.pdf?ci_sign=dedd65bbebe3c59db1f5b685833ef89066744455
MCD312-14io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-14N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8392079BA940C4&compId=MDD312-14N1.pdf?ci_sign=792bda4b8120bd8f2e2ccc7516966de107f48090
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 310A
Max. forward impulse current: 10.8kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-20N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83AD4FE0FE20C4&compId=MDD312-20N1.pdf?ci_sign=3fd8972fcbd5dd17cb14f503e124146bb1d0a2e8
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 310A
Max. forward impulse current: 10.8kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD312-12io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFDC6C3F32440C4&compId=MCD312-12io1.pdf?ci_sign=79086fa485071a4678fa5cfc24230c5f25f91f2a
MCD312-12io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Produkt ist nicht verfügbar
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CPC1976Y pVersion=0046&contRep=ZT&docId=005056AB82531EE9958F47397AEAF8BF&compId=CPC1976.pdf?ci_sign=7dca44109e48c92fa27552e2a09f1c4b0605d5cc
CPC1976Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
auf Bestellung 494 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.92 EUR
25+4.86 EUR
250+4.43 EUR
Mindestbestellmenge: 15
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CPC1393GR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640
CPC1393GR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Max. operating current: 90mA
On-state resistance: 50Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 5kV
Type of relay: solid state
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Body dimensions: 4.57x6.35x3.3mm
auf Bestellung 675 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.5 EUR
31+2.32 EUR
35+2.09 EUR
50+1.99 EUR
Mindestbestellmenge: 29
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CPC1963G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81B80C7&compId=CPC1963.pdf?ci_sign=2da1d21c69f1322b9b80590b037dcf21bef53c98
CPC1963G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Mounting: THT
Operating temperature: -40...85°C
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
auf Bestellung 364 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.42 EUR
50+6.84 EUR
250+5.49 EUR
Mindestbestellmenge: 7
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MDO600-16N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E0B6A8D9091E28&compId=MDO600-16N1-DTE.pdf?ci_sign=85daf70db78e274567cdc548301bd5844612f039
MDO600-16N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 1.01V
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Electrical mounting: screw
Case: Y1-CU
Max. forward voltage: 1.01V
Load current: 560A
Max. forward impulse current: 12.8kA
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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IXFN180N25T pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C6EEE88A158BF&compId=IXFN180N25T.pdf?ci_sign=93b68cf1b62ba6ba3001a31573d6dc6b40bde40e
IXFN180N25T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 364nC
Kind of channel: enhancement
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.09 EUR
5+27.31 EUR
10+26.44 EUR
Mindestbestellmenge: 3
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MCMA25P1600TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Kind of package: bulk
Type of semiconductor module: thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Case: TO240AA
Gate current: 55/80mA
Max. forward voltage: 1.52V
Load current: 25A
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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MDMA425P1600PTSF pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9986F31ACAD840D5&compId=MDMA425P1600PTSF.pdf?ci_sign=256148c68a58f15821faeddf355176a8fe2207f6
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: Press-Fit
Mechanical mounting: screw
Case: SimBus F
Load current: 425A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
Produkt ist nicht verfügbar
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VUO52-16NO1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFC7C2484CF820&compId=VUO52-16NO1.pdf?ci_sign=cb3d514fb98f76504c6323abae3ecd47f2564f93
VUO52-16NO1
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 0.83V
Leads: connectors
Leads dimensions: 2x0.5mm
Case: V1-A-Pack
Mechanical mounting: screw
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+34.56 EUR
5+33.46 EUR
Mindestbestellmenge: 3
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IXDN604PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC684A2EAF820&compId=IXD_604.pdf?ci_sign=5212fc240f089b60cb86612e9306367e8987585c
IXDN604PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2 EUR
50+1.46 EUR
53+1.36 EUR
Mindestbestellmenge: 36
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IXDN604SIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDN604SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 626 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.69 EUR
50+1.46 EUR
Mindestbestellmenge: 43
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IXDN604SI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDN604SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 879 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.19 EUR
50+2.7 EUR
100+2.52 EUR
200+2.35 EUR
300+2.3 EUR
Mindestbestellmenge: 23
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IXDN604SIATR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
IXDN604SIATR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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IXDN602D2TR pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDN602D2TR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.52 EUR
44+1.63 EUR
52+1.39 EUR
59+1.23 EUR
100+1.1 EUR
250+0.96 EUR
500+0.94 EUR
Mindestbestellmenge: 29
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IXTN110N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8D4C2C0D3B820&compId=IXTN110N20L2.pdf?ci_sign=22d1ef7a7256a11bcc8df888639ad4005a52d7b3
IXTN110N20L2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Technology: Linear L2™
Reverse recovery time: 420ns
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXTK110N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE9939600E0EFF298BF&compId=IXT_110N20L2.pdf?ci_sign=2efcd7c71b9a3d0ca4fa8423b4cac407d61b052b
IXTK110N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
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OMA160 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2699C0C7&compId=OMA160.pdf?ci_sign=81480a08d275770b533880aac2266f2ea5be6c1b
OMA160
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Mounting: THT
Insulation voltage: 3.75kV
Case: DIP6
Turn-on time: 125µs
Turn-off time: 125µs
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.19 EUR
17+4.25 EUR
25+3.69 EUR
Mindestbestellmenge: 14
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CPC1030NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75BE0C7&compId=CPC1030N.pdf?ci_sign=f5306a3547ebea4ac3441d82e07f700914fb2e7d
CPC1030NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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CPC1706Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4927C8677A0C7&compId=CPC1706.pdf?ci_sign=9ed605bb3e0989318f6e250694ab09cd9e3ff237
CPC1706Y
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 4A
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 90mΩ
Mounting: THT
Case: SOP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.73 EUR
24+3.1 EUR
25+2.89 EUR
Mindestbestellmenge: 20
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VHFD37-16IO1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F20DBFE661D820&compId=VHFD37-ser.pdf?ci_sign=2d812ba971aecf8861ab1d3dd43e94b87114da19
VHFD37-16IO1
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.04 EUR
10+39.04 EUR
Mindestbestellmenge: 2
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PLA191S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b
PLA191S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.73 EUR
100+4.38 EUR
Mindestbestellmenge: 13
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DSEI30-10A description pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD568A65B4938BF&compId=DSEI30-10A.pdf?ci_sign=852498fdf79c980b238d3a278082ea33068754bc
DSEI30-10A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 185A
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 138W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.83 EUR
Mindestbestellmenge: 19
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IXFH120N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9869832FD820&compId=IXFH(K)120N20P.pdf?ci_sign=ab9ee0cda8be66ad18abdb1fb39f266891be68ee
IXFH120N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Case: TO247-3
Mounting: THT
Gate charge: 152nC
Reverse recovery time: 100ns
On-state resistance: 22mΩ
Drain current: 120A
Power dissipation: 714W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Type of transistor: N-MOSFET
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.09 EUR
7+11.34 EUR
10+10.51 EUR
Mindestbestellmenge: 6
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CPC3701CTR pVersion=0046&contRep=ZT&docId=005056AB752F1EE7919FFA760F104746&compId=CPC3701.pdf?ci_sign=3b686c50781704a72018b86754c7a8d41bba5ce4
CPC3701CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Mounting: SMD
Kind of channel: depletion
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.6A
On-state resistance: 1Ω
Power dissipation: 1.1W
Gate-source voltage: ±15V
Drain-source voltage: 60V
Case: SOT89
auf Bestellung 330 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
89+0.8 EUR
140+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 61
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