Technische Details IXKT70N60C5 Littelfuse
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 66A, Power dissipation: 540W, Case: TO268, On-state resistance: 45mΩ, Mounting: SMD, Gate charge: 150nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: super junction coolmos, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXKT70N60C5
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IXKT70N60C5 | Hersteller : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 66A Power dissipation: 540W Case: TO268 On-state resistance: 45mΩ Mounting: SMD Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IXKT70N60C5 | Hersteller : IXYS |
Description: MOSFET P-CH 600V 68A TO-268 Packaging: Bulk |
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IXKT70N60C5 | Hersteller : IXYS |
MOSFET 70 Amps 600V |
Produkt ist nicht verfügbar |
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IXKT70N60C5 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 66A Power dissipation: 540W Case: TO268 On-state resistance: 45mΩ Mounting: SMD Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos |
Produkt ist nicht verfügbar |