| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXD2012NTR | IXYS |
 Category: MOSFET/IGBT driversDescription: IC: driver; H-bridge; half-bridge; SOIC8; 2.3A; Ch: 2; MOSFET; 10÷20V Mounting: SMD Case: SOIC8 Maximum output current: 2.3A Output current: 2.3A Type of integrated circuit: driver Power dissipation: 0.625W Operating temperature: -40...125°C Integrated circuit features: MOSFET Pulse fall time: 20ns Kind of integrated circuit: half-bridge Number of channels: 2 Impulse rise time: 30ns Topology: H-bridge Supply voltage: 10...20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IXTP26P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns Type of transistor: P-MOSFET Drain-source voltage: -100V Drain current: -26A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube Reverse recovery time: 70ns Gate charge: 52nC Polarisation: unipolar Technology: TrenchP™ |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTY26P10T-TRL | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; 100V; 26A; 150W; DPAK,TO252AA Type of transistor: P-MOSFET Drain-source voltage: 100V Drain current: 26A Power dissipation: 150W Case: DPAK; TO252AA Gate-source voltage: 15V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTY26P10T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252 Type of transistor: P-MOSFET Drain-source voltage: -100V Drain current: -26A Power dissipation: 150W Case: TO252 Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhancement Kind of package: tube Reverse recovery time: 70ns Gate charge: 52nC Polarisation: unipolar Technology: TrenchP™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTA26P10T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263 Type of transistor: P-MOSFET Drain-source voltage: -100V Drain current: -26A Power dissipation: 150W Case: TO263 Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhancement Kind of package: tube Reverse recovery time: 70ns Gate charge: 52nC Polarisation: unipolar Technology: TrenchP™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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XS170S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 244 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGT10N170A | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO268 Collector current: 5A Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 20A Power dissipation: 140W Gate charge: 29nC Technology: NPT Features of semiconductor devices: high voltage Type of transistor: IGBT Turn-on time: 107ns Kind of package: tube Turn-off time: 240ns Mounting: SMD Collector-emitter voltage: 1.7kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXGT10N170 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO268 Collector current: 10A Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 70A Power dissipation: 110W Gate charge: 32nC Technology: NPT Features of semiconductor devices: high voltage Type of transistor: IGBT Turn-on time: 0.3µs Kind of package: tube Turn-off time: 630ns Mounting: SMD Collector-emitter voltage: 1.7kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IXGT10N170-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.7kV; 10A; 110W; TO268 Collector current: 10A Case: TO268 Power dissipation: 110W Type of transistor: IGBT Kind of package: reel; tape Mounting: SMD Collector-emitter voltage: 1.7kV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IXTQ150N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P Mounting: THT Case: TO3P Kind of package: tube Power dissipation: 714W Gate charge: 0.19µC Polarisation: unipolar Technology: PolarHT™ Drain current: 150A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 13mΩ Reverse recovery time: 150ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFA220N06T3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 220A Power dissipation: 440W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 136nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 38ns Technology: HiPerFET™; TrenchT3™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFH220N06T3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 220A Power dissipation: 440W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 136nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 38ns Technology: HiPerFET™; TrenchT3™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTA120P065T-TRL | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; P; 65V; 298W; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: P Drain-source voltage: 65V Power dissipation: 298W Case: D2PAK; TO263 Gate-source voltage: 15V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXGK72N60B3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 450A Mounting: THT Gate charge: 225nC Kind of package: tube Turn-on time: 63ns Turn-off time: 370ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| MCMA25P1600TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V Gate current: 55/80mA Max. forward voltage: 1.52V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: screw Load current: 25A Kind of package: bulk Semiconductor structure: double series Case: TO240AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MDMA425P1600PT-PC | IXYS |
Category: Diode modules Description: Module: diode; 1.6kV; 425A; screw Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 1.6kV Load current: 425A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 24 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IXGA20N120A3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 180W Case: TO263 Mounting: SMD Gate charge: 50nC Kind of package: tube Turn-on time: 66ns Turn-off time: 1.53µs Gate-emitter voltage: ±20V Collector current: 20A Collector-emitter voltage: 1.2kV Pulsed collector current: 120A |
auf Bestellung 534 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYH20N120C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX3™; XPT™ Power dissipation: 230W Case: TO247-3 Mounting: THT Gate charge: 53nC Kind of package: tube Turn-on time: 60ns Turn-off time: 0.22µs Gate-emitter voltage: ±20V Collector current: 20A Collector-emitter voltage: 1.2kV Pulsed collector current: 88A |
auf Bestellung 233 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGH20N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 180W Case: TO247-3 Mounting: THT Gate charge: 50nC Kind of package: tube Turn-on time: 66ns Turn-off time: 1.53µs Gate-emitter voltage: ±20V Collector current: 20A Collector-emitter voltage: 1.2kV Pulsed collector current: 120A |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGA20N120B3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 180W Case: TO263 Mounting: SMD Gate charge: 51nC Kind of package: tube Turn-on time: 61ns Turn-off time: 720ns Gate-emitter voltage: ±20V Collector current: 20A Collector-emitter voltage: 1.2kV Pulsed collector current: 80A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXYA20N120C3HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2 Type of transistor: IGBT Technology: GenX3™; XPT™ Power dissipation: 278W Case: TO263-2 Mounting: SMD Gate charge: 53nC Kind of package: tube Turn-on time: 60ns Turn-off time: 215ns Gate-emitter voltage: ±20V Collector current: 20A Collector-emitter voltage: 1.2kV Pulsed collector current: 96A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXYA20N120A4HV-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; TO263 Type of transistor: IGBT Case: TO263 Mounting: SMD Kind of package: reel; tape Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXYT20N120C3D1HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV Type of transistor: IGBT Technology: GenX3™; XPT™ Power dissipation: 230W Case: TO268HV Mounting: SMD Gate charge: 53nC Kind of package: tube Turn-on time: 60ns Turn-off time: 0.22µs Gate-emitter voltage: ±20V Collector current: 17A Collector-emitter voltage: 1.2kV Pulsed collector current: 88A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXGA20N120A3-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 180W; D2PAK Type of transistor: IGBT Power dissipation: 180W Case: D2PAK Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Gate-emitter voltage: ±20V Collector current: 40A Collector-emitter voltage: 1.2kV Pulsed collector current: 120A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXGA20N120B3-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 36A; 180W; D2PAK Type of transistor: IGBT Power dissipation: 180W Case: D2PAK Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Turn-off time: 150ns Gate-emitter voltage: ±20V Collector current: 36A Collector-emitter voltage: 1.2kV Pulsed collector current: 80A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXYA20N120A4HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 80A; 375W; D2PAK Type of transistor: IGBT Power dissipation: 375W Case: D2PAK Mounting: SMD Gate charge: 46nC Kind of package: tube Gate-emitter voltage: ±20V Collector current: 80A Collector-emitter voltage: 1.2kV Pulsed collector current: 135A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXYA20N120B4HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 76A; 375W; D2PAK Type of transistor: IGBT Power dissipation: 375W Case: D2PAK Mounting: SMD Gate charge: 44nC Kind of package: tube Turn-off time: 200ns Gate-emitter voltage: ±20V Collector current: 76A Collector-emitter voltage: 1.2kV Pulsed collector current: 130A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IXYA20N120B4HV-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 68A; 375W; TO263HV Type of transistor: IGBT Power dissipation: 375W Case: TO263HV Mounting: SMD Kind of package: reel; tape Collector current: 68A Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IXYA20N120C3HV-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 278W; D2PAK Type of transistor: IGBT Power dissipation: 278W Case: D2PAK Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Turn-off time: 90ns Gate-emitter voltage: ±20V Collector current: 40A Collector-emitter voltage: 1.2kV Pulsed collector current: 96A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXYA20N120C4HV-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 68A; 375W; D2PAK Type of transistor: IGBT Power dissipation: 375W Case: D2PAK Mounting: SMD Kind of package: reel; tape Collector current: 68A Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXYH20N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 278W Case: TO247-3 Mounting: THT Gate charge: 53nC Kind of package: tube Turn-on time: 60ns Turn-off time: 0.22µs Gate-emitter voltage: ±20V Collector current: 20A Collector-emitter voltage: 1.2kV Pulsed collector current: 96A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IXYH20N120C4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 36A; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 36A Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| IXYJ20N120C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247 Type of transistor: IGBT Technology: GenX3™; XPT™ Power dissipation: 105W Case: TO247 Mounting: THT Gate charge: 53nC Kind of package: tube Turn-on time: 20ns Turn-off time: 90ns Gate-emitter voltage: ±20V Collector current: 21A Collector-emitter voltage: 1.2kV Pulsed collector current: 40A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IXYP20N120A4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 80A; 375W; TO220-3 Type of transistor: IGBT Power dissipation: 375W Case: TO220-3 Mounting: THT Gate charge: 46nC Kind of package: tube Gate-emitter voltage: ±20V Collector current: 80A Collector-emitter voltage: 1.2kV Pulsed collector current: 135A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXYP20N120B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 76A; 375W; TO220-3 Type of transistor: IGBT Power dissipation: 375W Case: TO220-3 Mounting: THT Gate charge: 44nC Kind of package: tube Turn-off time: 200ns Gate-emitter voltage: ±20V Collector current: 76A Collector-emitter voltage: 1.2kV Pulsed collector current: 130A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXYP20N120C4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 68A; 375W; TO220-3 Type of transistor: IGBT Power dissipation: 375W Case: TO220-3 Mounting: THT Gate charge: 44nC Kind of package: tube Turn-off time: 160ns Gate-emitter voltage: ±20V Collector current: 68A Collector-emitter voltage: 1.2kV Pulsed collector current: 120A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXGK120N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 830W Case: TO264 Mounting: THT Gate charge: 420nC Kind of package: tube Turn-on time: 105ns Turn-off time: 1365ns Gate-emitter voltage: ±20V Collector current: 120A Collector-emitter voltage: 1.2kV Pulsed collector current: 600A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IXYK120N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 320A; 1.5kW; TO264 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 320A Power dissipation: 1.5kW Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 800A Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IXGK120N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 830W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 370A Mounting: THT Gate charge: 470nC Kind of package: tube Turn-on time: 122ns Turn-off time: 885ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXYN120N120C3 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B Technology: GenX3™; XPT™ Collector current: 120A Power dissipation: 1.2kW Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 700A Max. off-state voltage: 1.2kV Electrical mounting: screw Semiconductor structure: single transistor Type of semiconductor module: IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| MMIX1G120N120A3V1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 105A Power dissipation: 400W Case: SMPD Gate-emitter voltage: ±20V Pulsed collector current: 700A Mounting: SMD Gate charge: 420nC Kind of package: tube Turn-on time: 105ns Turn-off time: 1365ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IXTU4N70X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Pulsed drain current: 8A Power dissipation: 80W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 11.8nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH50N30L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 540W; TO247-3; 430ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 50A Power dissipation: 540W Case: TO247-3 On-state resistance: 72mΩ Mounting: THT Gate charge: 330nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 430ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IXBOD2-04 | IXYS |
Category: Thyristors - others Description: Thyristor: BOD; 0.9A; FP-Case; THT; 2nd Gen; 400V; bulk Type of thyristor: BOD Max. load current: 0.9A Case: FP-Case Mounting: THT Technology: 2nd Gen Breakover voltage: 400V Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MD16130S-DKM2MM | IXYS |
Category: Diode modules Description: Module: diode; double,common cathode; 1.6kV; If: 130A; package S Mechanical mounting: screw Electrical mounting: screw Max. forward impulse current: 3.5kA Max. forward voltage: 1.5V Type of semiconductor module: diode Max. off-state voltage: 1.6kV Load current: 130A Max. load current: 204A Kind of package: bulk Semiconductor structure: common cathode; double Case: package S |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IXTH10N100D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Power dissipation: 695W Case: TO247-3 On-state resistance: 1.5Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: depletion Reverse recovery time: 70ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTT10N100D | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Pulsed drain current: 20A Power dissipation: 400W Case: TO268 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 130nC Kind of package: tube Kind of channel: depletion Reverse recovery time: 850ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTT10N100D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Power dissipation: 695W Case: TO268 On-state resistance: 1.5Ω Mounting: SMD Kind of package: tube Kind of channel: depletion Reverse recovery time: 70ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTY01N100D | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252; 2ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.1A Power dissipation: 25W Case: TO252 On-state resistance: 80Ω Mounting: SMD Gate charge: 0.1µC Kind of package: tube Kind of channel: depletion Reverse recovery time: 2ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTT50P10 | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns Mounting: SMD Power dissipation: 300W Gate charge: 0.14µC Polarisation: unipolar Drain current: -50A Kind of channel: enhancement Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO268 On-state resistance: 55mΩ Reverse recovery time: 180ns |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFB62N80Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Q3-Class; unipolar; 800V; 62A; 1560W; 300ns Case: PLUS264™ Mounting: THT Kind of package: tube Power dissipation: 1.56kW Gate charge: 0.27µC Polarisation: unipolar Technology: HiPerFET™; Q3-Class Drain current: 62A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 0.14Ω Reverse recovery time: 300ns |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN32N80P | IXYS |
Category: Transistor modules Description: Module; single transistor; 800V; 29A; SOT227B; screw; Idm: 250A Case: SOT227B Pulsed drain current: 250A Type of semiconductor module: MOSFET transistor Power dissipation: 625W Gate charge: 150nC Polarisation: unipolar Technology: HiPerFET™; PolarHV™ Drain current: 29A Kind of channel: enhancement Drain-source voltage: 800V Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: ±40V Semiconductor structure: single transistor On-state resistance: 0.27Ω Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFN62N80Q3 | IXYS |
Category: Transistor modules Description: Module; single transistor; 800V; 49A; SOT227B; screw; Idm: 180A Case: SOT227B Pulsed drain current: 180A Type of semiconductor module: MOSFET transistor Power dissipation: 960W Gate charge: 0.27µC Polarisation: unipolar Technology: HiPerFET™; Q3-Class Drain current: 49A Kind of channel: enhancement Drain-source voltage: 800V Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: ±40V Semiconductor structure: single transistor On-state resistance: 0.14Ω Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFK32N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; TO264 Case: TO264 Mounting: THT Kind of package: tube Power dissipation: 830W Gate charge: 150nC Polarisation: unipolar Drain current: 32A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET On-state resistance: 0.27Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFR32N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 300W; ISOPLUS247™ Case: ISOPLUS247™ Mounting: THT Kind of package: tube Power dissipation: 300W Gate charge: 150nC Polarisation: unipolar Drain current: 20A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET On-state resistance: 0.29Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFR32N80Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 500W; ISOPLUS247™ Case: ISOPLUS247™ Mounting: THT Kind of package: tube Power dissipation: 500W Gate charge: 0.14µC Polarisation: unipolar Drain current: 24A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET On-state resistance: 0.3Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFX32N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™ Case: PLUS247™ Mounting: THT Kind of package: tube Power dissipation: 830W Gate charge: 150nC Polarisation: unipolar Drain current: 32A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET On-state resistance: 0.27Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFX32N80Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; PLUS247™ Case: PLUS247™ Mounting: THT Kind of package: tube Power dissipation: 1kW Gate charge: 0.14µC Polarisation: unipolar Drain current: 32A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET On-state resistance: 0.27Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CS19-12HO1 | IXYS |
 Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28mA; TO220AB; THT; tube Max. off-state voltage: 1.2kV Load current: 20A Case: TO220AB Mounting: THT Max. load current: 31A Max. forward impulse current: 180A Kind of package: tube Gate current: 28mA Type of thyristor: thyristor |
auf Bestellung 506 Stücke: Lieferzeit 14-21 Tag (e) |
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CLA5E1200UC-TRL | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; DPAK; SMD; tube Max. off-state voltage: 1.2kV Load current: 5A Case: DPAK Mounting: SMD Max. load current: 7.8A Max. forward impulse current: 60A Kind of package: tube Gate current: 30/50mA Type of thyristor: thyristor |
auf Bestellung 2219 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXD2012NTR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; SOIC8; 2.3A; Ch: 2; MOSFET; 10÷20V
Mounting: SMD
Case: SOIC8
Maximum output current: 2.3A
Output current: 2.3A
Type of integrated circuit: driver
Power dissipation: 0.625W
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 20ns
Kind of integrated circuit: half-bridge
Number of channels: 2
Impulse rise time: 30ns
Topology: H-bridge
Supply voltage: 10...20V
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; SOIC8; 2.3A; Ch: 2; MOSFET; 10÷20V
Mounting: SMD
Case: SOIC8
Maximum output current: 2.3A
Output current: 2.3A
Type of integrated circuit: driver
Power dissipation: 0.625W
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 20ns
Kind of integrated circuit: half-bridge
Number of channels: 2
Impulse rise time: 30ns
Topology: H-bridge
Supply voltage: 10...20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTP26P10T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 70ns
Gate charge: 52nC
Polarisation: unipolar
Technology: TrenchP™
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 70ns
Gate charge: 52nC
Polarisation: unipolar
Technology: TrenchP™
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 42.54 EUR |
| IXTY26P10T-TRL |
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; 26A; 150W; DPAK,TO252AA
Type of transistor: P-MOSFET
Drain-source voltage: 100V
Drain current: 26A
Power dissipation: 150W
Case: DPAK; TO252AA
Gate-source voltage: 15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; 26A; 150W; DPAK,TO252AA
Type of transistor: P-MOSFET
Drain-source voltage: 100V
Drain current: 26A
Power dissipation: 150W
Case: DPAK; TO252AA
Gate-source voltage: 15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTY26P10T |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 70ns
Gate charge: 52nC
Polarisation: unipolar
Technology: TrenchP™
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 70ns
Gate charge: 52nC
Polarisation: unipolar
Technology: TrenchP™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA26P10T |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 70ns
Gate charge: 52nC
Polarisation: unipolar
Technology: TrenchP™
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 70ns
Gate charge: 52nC
Polarisation: unipolar
Technology: TrenchP™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| XS170S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 4.75 EUR |
| 50+ | 3.12 EUR |
| IXGT10N170A |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO268
Collector current: 5A
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 140W
Gate charge: 29nC
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 107ns
Kind of package: tube
Turn-off time: 240ns
Mounting: SMD
Collector-emitter voltage: 1.7kV
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO268
Collector current: 5A
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 140W
Gate charge: 29nC
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 107ns
Kind of package: tube
Turn-off time: 240ns
Mounting: SMD
Collector-emitter voltage: 1.7kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGT10N170 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO268
Collector current: 10A
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Power dissipation: 110W
Gate charge: 32nC
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 0.3µs
Kind of package: tube
Turn-off time: 630ns
Mounting: SMD
Collector-emitter voltage: 1.7kV
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO268
Collector current: 10A
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Power dissipation: 110W
Gate charge: 32nC
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 0.3µs
Kind of package: tube
Turn-off time: 630ns
Mounting: SMD
Collector-emitter voltage: 1.7kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGT10N170-TRL |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.7kV; 10A; 110W; TO268
Collector current: 10A
Case: TO268
Power dissipation: 110W
Type of transistor: IGBT
Kind of package: reel; tape
Mounting: SMD
Collector-emitter voltage: 1.7kV
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.7kV; 10A; 110W; TO268
Collector current: 10A
Case: TO268
Power dissipation: 110W
Type of transistor: IGBT
Kind of package: reel; tape
Mounting: SMD
Collector-emitter voltage: 1.7kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTQ150N15P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Power dissipation: 714W
Gate charge: 0.19µC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Power dissipation: 714W
Gate charge: 0.19µC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFA220N06T3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Technology: HiPerFET™; TrenchT3™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Technology: HiPerFET™; TrenchT3™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH220N06T3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Technology: HiPerFET™; TrenchT3™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Technology: HiPerFET™; TrenchT3™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA120P065T-TRL |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 65V; 298W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: P
Drain-source voltage: 65V
Power dissipation: 298W
Case: D2PAK; TO263
Gate-source voltage: 15V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 65V; 298W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: P
Drain-source voltage: 65V
Power dissipation: 298W
Case: D2PAK; TO263
Gate-source voltage: 15V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXGK72N60B3H1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCMA25P1600TA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Gate current: 55/80mA
Max. forward voltage: 1.52V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 25A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Gate current: 55/80mA
Max. forward voltage: 1.52V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 25A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MDMA425P1600PT-PC |
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; 1.6kV; 425A; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Load current: 425A
Category: Diode modules
Description: Module: diode; 1.6kV; 425A; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Load current: 425A
Produkt ist nicht verfügbar
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXGA20N120A3 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO263
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 120A
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO263
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 120A
auf Bestellung 534 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 10.41 EUR |
| 10+ | 8.52 EUR |
| IXYH20N120C3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 88A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 88A
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 12.3 EUR |
| 8+ | 11.6 EUR |
| IXGH20N120A3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO247-3
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 120A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO247-3
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 120A
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 11.63 EUR |
| 11+ | 7.84 EUR |
| 30+ | 6.79 EUR |
| IXGA20N120B3 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO263
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 80A
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 180W
Case: TO263
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 80A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXYA20N120C3HV |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 278W
Case: TO263-2
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 96A
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 278W
Case: TO263-2
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 96A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYA20N120A4HV-TRL |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; TO263
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Category: SMD IGBT transistors
Description: Transistor: IGBT; TO263
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXYT20N120C3D1HV |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 230W
Case: TO268HV
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 17A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 88A
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 230W
Case: TO268HV
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 17A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 88A
Produkt ist nicht verfügbar
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| IXGA20N120A3-TRL |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 180W; D2PAK
Type of transistor: IGBT
Power dissipation: 180W
Case: D2PAK
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 120A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 180W; D2PAK
Type of transistor: IGBT
Power dissipation: 180W
Case: D2PAK
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 120A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXGA20N120B3-TRL |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 36A; 180W; D2PAK
Type of transistor: IGBT
Power dissipation: 180W
Case: D2PAK
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Turn-off time: 150ns
Gate-emitter voltage: ±20V
Collector current: 36A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 80A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 36A; 180W; D2PAK
Type of transistor: IGBT
Power dissipation: 180W
Case: D2PAK
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Turn-off time: 150ns
Gate-emitter voltage: ±20V
Collector current: 36A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 80A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXYA20N120A4HV |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 375W; D2PAK
Type of transistor: IGBT
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 80A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 135A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 375W; D2PAK
Type of transistor: IGBT
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 80A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 135A
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXYA20N120B4HV |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 76A; 375W; D2PAK
Type of transistor: IGBT
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Collector current: 76A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 130A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 76A; 375W; D2PAK
Type of transistor: IGBT
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Collector current: 76A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 130A
Produkt ist nicht verfügbar
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| IXYA20N120B4HV-TRL |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 68A; 375W; TO263HV
Type of transistor: IGBT
Power dissipation: 375W
Case: TO263HV
Mounting: SMD
Kind of package: reel; tape
Collector current: 68A
Collector-emitter voltage: 1.2kV
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 68A; 375W; TO263HV
Type of transistor: IGBT
Power dissipation: 375W
Case: TO263HV
Mounting: SMD
Kind of package: reel; tape
Collector current: 68A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXYA20N120C3HV-TRL |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 278W; D2PAK
Type of transistor: IGBT
Power dissipation: 278W
Case: D2PAK
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Turn-off time: 90ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 96A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 278W; D2PAK
Type of transistor: IGBT
Power dissipation: 278W
Case: D2PAK
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Turn-off time: 90ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 96A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXYA20N120C4HV-TRL |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 68A; 375W; D2PAK
Type of transistor: IGBT
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 68A
Collector-emitter voltage: 1.2kV
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 68A; 375W; D2PAK
Type of transistor: IGBT
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 68A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXYH20N120C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO247-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 96A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 278W
Case: TO247-3
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 96A
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXYH20N120C4 |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 36A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 36A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 36A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 36A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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| IXYJ20N120C3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 105W
Case: TO247
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 20ns
Turn-off time: 90ns
Gate-emitter voltage: ±20V
Collector current: 21A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 105W
Case: TO247
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 20ns
Turn-off time: 90ns
Gate-emitter voltage: ±20V
Collector current: 21A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXYP20N120A4 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 375W; TO220-3
Type of transistor: IGBT
Power dissipation: 375W
Case: TO220-3
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 80A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 135A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 375W; TO220-3
Type of transistor: IGBT
Power dissipation: 375W
Case: TO220-3
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 80A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 135A
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXYP20N120B4 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 76A; 375W; TO220-3
Type of transistor: IGBT
Power dissipation: 375W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Collector current: 76A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 130A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 76A; 375W; TO220-3
Type of transistor: IGBT
Power dissipation: 375W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Collector current: 76A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 130A
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXYP20N120C4 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 68A; 375W; TO220-3
Type of transistor: IGBT
Power dissipation: 375W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Collector current: 68A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 120A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 68A; 375W; TO220-3
Type of transistor: IGBT
Power dissipation: 375W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Collector current: 68A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 120A
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXGK120N120A3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 830W
Case: TO264
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
Gate-emitter voltage: ±20V
Collector current: 120A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 600A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 830W
Case: TO264
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
Gate-emitter voltage: ±20V
Collector current: 120A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 600A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXYK120N120B3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 320A; 1.5kW; TO264
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 320A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 320A; 1.5kW; TO264
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 320A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXGK120N120B3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
Produkt ist nicht verfügbar
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| IXYN120N120C3 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B
Technology: GenX3™; XPT™
Collector current: 120A
Power dissipation: 1.2kW
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B
Technology: GenX3™; XPT™
Collector current: 120A
Power dissipation: 1.2kW
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MMIX1G120N120A3V1 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 105A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 105A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
Produkt ist nicht verfügbar
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| IXTU4N70X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 3.17 EUR |
| 30+ | 2.86 EUR |
| 34+ | 2.52 EUR |
| IXTH50N30L2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 540W; TO247-3; 430ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 50A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 72mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 430ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 540W; TO247-3; 430ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 50A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 72mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 430ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXBOD2-04 |
|
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; 2nd Gen; 400V; bulk
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Technology: 2nd Gen
Breakover voltage: 400V
Kind of package: bulk
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; 2nd Gen; 400V; bulk
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Technology: 2nd Gen
Breakover voltage: 400V
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MD16130S-DKM2MM |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 130A; package S
Mechanical mounting: screw
Electrical mounting: screw
Max. forward impulse current: 3.5kA
Max. forward voltage: 1.5V
Type of semiconductor module: diode
Max. off-state voltage: 1.6kV
Load current: 130A
Max. load current: 204A
Kind of package: bulk
Semiconductor structure: common cathode; double
Case: package S
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 130A; package S
Mechanical mounting: screw
Electrical mounting: screw
Max. forward impulse current: 3.5kA
Max. forward voltage: 1.5V
Type of semiconductor module: diode
Max. off-state voltage: 1.6kV
Load current: 130A
Max. load current: 204A
Kind of package: bulk
Semiconductor structure: common cathode; double
Case: package S
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH10N100D2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTT10N100D |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 850ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 850ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTT10N100D2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO268
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO268
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTY01N100D |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO252
On-state resistance: 80Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 2ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO252
On-state resistance: 80Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 2ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTT50P10 |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Mounting: SMD
Power dissipation: 300W
Gate charge: 0.14µC
Polarisation: unipolar
Drain current: -50A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 55mΩ
Reverse recovery time: 180ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Mounting: SMD
Power dissipation: 300W
Gate charge: 0.14µC
Polarisation: unipolar
Drain current: -50A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 55mΩ
Reverse recovery time: 180ns
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 12.82 EUR |
| 8+ | 11.33 EUR |
| 10+ | 10.17 EUR |
| IXFB62N80Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 800V; 62A; 1560W; 300ns
Case: PLUS264™
Mounting: THT
Kind of package: tube
Power dissipation: 1.56kW
Gate charge: 0.27µC
Polarisation: unipolar
Technology: HiPerFET™; Q3-Class
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 800V; 62A; 1560W; 300ns
Case: PLUS264™
Mounting: THT
Kind of package: tube
Power dissipation: 1.56kW
Gate charge: 0.27µC
Polarisation: unipolar
Technology: HiPerFET™; Q3-Class
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Reverse recovery time: 300ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |
| IXFN32N80P |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 800V; 29A; SOT227B; screw; Idm: 250A
Case: SOT227B
Pulsed drain current: 250A
Type of semiconductor module: MOSFET transistor
Power dissipation: 625W
Gate charge: 150nC
Polarisation: unipolar
Technology: HiPerFET™; PolarHV™
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 800V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
On-state resistance: 0.27Ω
Reverse recovery time: 250ns
Category: Transistor modules
Description: Module; single transistor; 800V; 29A; SOT227B; screw; Idm: 250A
Case: SOT227B
Pulsed drain current: 250A
Type of semiconductor module: MOSFET transistor
Power dissipation: 625W
Gate charge: 150nC
Polarisation: unipolar
Technology: HiPerFET™; PolarHV™
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 800V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
On-state resistance: 0.27Ω
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFN62N80Q3 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 800V; 49A; SOT227B; screw; Idm: 180A
Case: SOT227B
Pulsed drain current: 180A
Type of semiconductor module: MOSFET transistor
Power dissipation: 960W
Gate charge: 0.27µC
Polarisation: unipolar
Technology: HiPerFET™; Q3-Class
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 800V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
On-state resistance: 0.14Ω
Reverse recovery time: 300ns
Category: Transistor modules
Description: Module; single transistor; 800V; 49A; SOT227B; screw; Idm: 180A
Case: SOT227B
Pulsed drain current: 180A
Type of semiconductor module: MOSFET transistor
Power dissipation: 960W
Gate charge: 0.27µC
Polarisation: unipolar
Technology: HiPerFET™; Q3-Class
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 800V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
On-state resistance: 0.14Ω
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFK32N80P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 830W
Gate charge: 150nC
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 830W
Gate charge: 150nC
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFR32N80P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 300W
Gate charge: 150nC
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.29Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 300W
Gate charge: 150nC
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.29Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFR32N80Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 500W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 500W
Gate charge: 0.14µC
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.3Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 500W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 500W
Gate charge: 0.14µC
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.3Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFX32N80P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 830W
Gate charge: 150nC
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 830W
Gate charge: 150nC
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFX32N80Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 1kW
Gate charge: 0.14µC
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 1kW
Gate charge: 0.14µC
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CS19-12HO1 |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 20A
Case: TO220AB
Mounting: THT
Max. load current: 31A
Max. forward impulse current: 180A
Kind of package: tube
Gate current: 28mA
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 20A
Case: TO220AB
Mounting: THT
Max. load current: 31A
Max. forward impulse current: 180A
Kind of package: tube
Gate current: 28mA
Type of thyristor: thyristor
auf Bestellung 506 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 4.76 EUR |
| 23+ | 3.72 EUR |
| 28+ | 3.08 EUR |
| 50+ | 2.46 EUR |
| 100+ | 2.43 EUR |
| CLA5E1200UC-TRL |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; DPAK; SMD; tube
Max. off-state voltage: 1.2kV
Load current: 5A
Case: DPAK
Mounting: SMD
Max. load current: 7.8A
Max. forward impulse current: 60A
Kind of package: tube
Gate current: 30/50mA
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; DPAK; SMD; tube
Max. off-state voltage: 1.2kV
Load current: 5A
Case: DPAK
Mounting: SMD
Max. load current: 7.8A
Max. forward impulse current: 60A
Kind of package: tube
Gate current: 30/50mA
Type of thyristor: thyristor
auf Bestellung 2219 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 3.03 EUR |
| 31+ | 2.77 EUR |
| 32+ | 2.73 EUR |
| 100+ | 2.53 EUR |
| 250+ | 2.42 EUR |
| 500+ | 2.17 EUR |