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IXTP160N04T2 IXTP160N04T2 IXYS IXTA(P)160N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
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IXFH46N65X2 IXFH46N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F8F820&compId=IXFH46N65X2.pdf?ci_sign=18d8737ea270a8587aa3e2cf370bec98f3fe9809 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 220 Stücke:
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CPC1150N CPC1150N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A3B9CF7BD978BF&compId=CPC1150N.pdf?ci_sign=c821c2d7d5de511af558a9ef727e8d94eaa1df7b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 50Ω
Turn-off time: 2ms
Turn-on time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Switched voltage: max. 350V AC; max. 350V DC
auf Bestellung 504 Stücke:
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20+3.7 EUR
100+3.09 EUR
500+2.47 EUR
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IXFH14N80P IXFH14N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF8DAC82F1820&compId=IXFH(Q%2CT)14N80P_S.pdf?ci_sign=54c4a7d42ec81caabad0953bf61c033b9e6baf24 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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IXFA180N10T2 IXFA180N10T2 IXYS IXFA(P)180N10T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
auf Bestellung 136 Stücke:
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IXFP180N10T2 IXFP180N10T2 IXYS IXFA(P)180N10T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
auf Bestellung 218 Stücke:
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13+5.71 EUR
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IXYH75N65C3H1 IXYH75N65C3H1 IXYS IXYH75N65C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
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IXYN75N65C3D1 IXYN75N65C3D1 IXYS IXYN75N65C3D1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Max. off-state voltage: 650V
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
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IXFP34N65X2 IXFP34N65X2 IXYS IXF_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
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13+5.58 EUR
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CPC1106N CPC1106N IXYS CPC1106N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-off time: 10ms
Turn-on time: 10ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 1.5kV
Case: SOP4
Mounting: SMT
Kind of output: MOSFET
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CPC1106NTR CPC1106NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75E80C7&compId=CPC1106N.pdf?ci_sign=8c782f12f65952eb66dd4b4c0c46f9f3e8745e8a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 75mA; max.60VAC
Case: SOP4
On-state resistance: 10Ω
Turn-off time: 10ms
Turn-on time: 10ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 75mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Switched voltage: max. 60V AC; max. 60V DC
auf Bestellung 757 Stücke:
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47+1.54 EUR
100+1.36 EUR
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IXGT72N60A3 IXGT72N60A3 IXYS IXG_72N60A3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO268
Type of transistor: IGBT
Power dissipation: 540W
Case: TO268
Mounting: SMD
Gate charge: 230nC
Kind of package: tube
Collector current: 72A
Pulsed collector current: 400A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: GenX3™
Turn-on time: 61ns
Turn-off time: 885ns
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IXGH72N60A3 IXGH72N60A3 IXYS IXG_72N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Power dissipation: 540W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Collector current: 72A
Pulsed collector current: 400A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: GenX3™; XPT™
Turn-on time: 61ns
Turn-off time: 885ns
auf Bestellung 236 Stücke:
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10+10.37 EUR
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120+7.44 EUR
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DSEI30-06A DSEI30-06A IXYS DSEI30-06A.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 37A; tube; Ifsm: 300A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 37A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
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IXFA22N60P3 IXFA22N60P3 IXYS IXFA(H,P,Q)22N60P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 296 Stücke:
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13+5.82 EUR
14+5.23 EUR
16+4.62 EUR
50+4.15 EUR
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IXFH22N60P IXFH22N60P IXYS IXFH22N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 164 Stücke:
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10+7.25 EUR
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30+6.42 EUR
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IXFH22N60P3 IXFH22N60P3 IXYS IXFA(H,P,Q)22N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 580 Stücke:
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IXFP22N60P3 IXFP22N60P3 IXYS IXFA(H,P,Q)22N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 143 Stücke:
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12+6.13 EUR
14+5.26 EUR
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100+4.28 EUR
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IXKH35N60C5 IXKH35N60C5 IXYS IXKH35N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; 357W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Gate charge: 60nC
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IXKN75N60C IXKN75N60C IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B5CF884CAC483E28&compId=IXKN75N60C-DTE.pdf?ci_sign=0fa51332a57718507258414fc17eaf7b8be70c9b Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 560W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Gate charge: 500nC
Kind of channel: enhancement
Reverse recovery time: 580ns
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
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IXXH75N60C3 IXXH75N60C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB419567FC1820&compId=IXXH75N60C3.pdf?ci_sign=9e7c3e8f477c39f364e70435e4f49d0340f77efb Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 105ns
Turn-off time: 165ns
Gate-emitter voltage: ±20V
Collector current: 75A
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IXXH75N60C3D1 IXXH75N60C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB43B72332F820&compId=IXXH75N60C3D1.pdf?ci_sign=7226b060f7541cfae9705b803247e882175885cd Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 185ns
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IXFN120N65X2 IXFN120N65X2 IXYS IXFN120N65X2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 108A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 24mΩ
Kind of channel: enhancement
Pulsed drain current: 240A
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate charge: 240nC
Reverse recovery time: 220ns
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IXFN26N120P IXFN26N120P IXYS IXFN26N120P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.5Ω
Pulsed drain current: 60A
Power dissipation: 695W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 255nC
Reverse recovery time: 300ns
Kind of channel: enhancement
auf Bestellung 7 Stücke:
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1+78.52 EUR
3+69.34 EUR
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CPC1114N CPC1114N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75FE0C7&compId=CPC1114N.pdf?ci_sign=36ecf46fb10f7b97fccf3227e429fc88dfec2307 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Case: SOP4
On-state resistance: 2Ω
Turn-off time: 5ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.4A
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Switched voltage: max. 60V AC; max. 60V DC
auf Bestellung 70 Stücke:
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33+2.19 EUR
40+1.83 EUR
54+1.34 EUR
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IXTK210P10T IXTK210P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794B99F61BE8748&compId=IXTK210P10T.pdf?ci_sign=770cd11c3591d5f99ee9f471b3427981351a0ec8 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Kind of channel: enhancement
Technology: TrenchP™
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IXTA76N25T IXTA76N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4165ECB579820&compId=IXTA(H%2CI%2CP%2CQ)76N25T.pdf?ci_sign=5561f98ce5cfa59f8e5ad5e0fac5ca227be0863e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 148ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA76P10T IXTA76P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0666B5AC438BF&compId=IXT_76P10T_HV.pdf?ci_sign=885b69a53fc37e69ce9f6124910ae9a6856f96fd Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
auf Bestellung 137 Stücke:
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10+7.79 EUR
11+6.95 EUR
12+6.42 EUR
13+5.63 EUR
50+4.69 EUR
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IXFN110N85X IXFN110N85X IXYS IXFN110N85X.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 220A
Power dissipation: 1170W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 425nC
Reverse recovery time: 205ns
Kind of channel: enhancement
auf Bestellung 8 Stücke:
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1+90.7 EUR
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IXFN180N15P IXFN180N15P IXYS IXFN180N15P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 150A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 11mΩ
Pulsed drain current: 380A
Power dissipation: 680W
Technology: HiPerFET™; PolarHT™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 240nC
Reverse recovery time: 200ns
Kind of channel: enhancement
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IXFB150N65X2 IXFB150N65X2 IXYS IXFB150N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Power dissipation: 1.56kW
Case: PLUS264™
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhancement
Reverse recovery time: 260ns
On-state resistance: 17mΩ
Drain current: 150A
Gate-source voltage: ±30V
Technology: HiPerFET™; X2-Class
Drain-source voltage: 650V
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VUO68-16NO7 VUO68-16NO7 IXYS pVersion=0046&contRep=ZT&docId=E2920A1362DBFCF19A99005056AB752F&compId=VUO68-16NO7.pdf?ci_sign=fbd0ecee230da44ce53781abb73e734948a92ccc Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 68A; Ifsm: 300A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 68A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.5V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
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IX4340N IX4340N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D86254426D5D8BF&compId=IX4340.pdf?ci_sign=560a08df3f47fc5e55b105888745757deeb6a350 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Case: SO8
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: non-inverting
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IX4340NE IX4340NE IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D86254426D5D8BF&compId=IX4340.pdf?ci_sign=560a08df3f47fc5e55b105888745757deeb6a350 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Case: SO8-EP
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: non-inverting
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IX4340NETR IXYS IX4340NE?assetguid=B6D399FA-9C99-4C15-B6C0-B87CEC93F28F Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Case: SO8-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: non-inverting
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IX4340NTR IX4340NTR IXYS littelfuse-integrated-circuits-ix4340-datasheet?assetguid=628db25e-f5aa-46f2-a8e9-89ea7f36cc00 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: non-inverting
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CLA100E1200HB CLA100E1200HB IXYS CLA100E1200HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 160A
Load current: 100A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.19kA
auf Bestellung 355 Stücke:
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IXFP20N85X IXFP20N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD263488393820&compId=IXFH(P)20N85X.pdf?ci_sign=7c12a971503592693c6f40300c433ab581bc443f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 63nC
Reverse recovery time: 190ns
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IXKP20N60C5M IXKP20N60C5M IXYS IXKP20N60C5M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; TO220FP; 340ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Reverse recovery time: 340ns
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IXTP20N65X2M IXTP20N65X2M IXYS IXTP20N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 36W; TO220FP; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
Reverse recovery time: 0.35µs
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IXYP20N65B3D1 IXYP20N65B3D1 IXYS IXYP20N65B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Collector-emitter voltage: 650V
Turn-on time: 39ns
Gate charge: 29nC
Turn-off time: 271ns
Produkt ist nicht verfügbar
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IXKH20N60C5 IXKH20N60C5 IXYS IXK(H)20N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Gate charge: 32nC
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IXTP60N20T IXTP60N20T IXYS IXTA(P,Q)60N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
Mounting: THT
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Power dissipation: 500W
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 206 Stücke:
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IXTQ60N20T IXTQ60N20T IXYS IXTA(P,Q)60N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
Mounting: THT
Kind of package: tube
Case: TO3P
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Power dissipation: 500W
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 232 Stücke:
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IXYN120N120C3 IXYN120N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F33CFF369FB820&compId=IXYN120N120C3.pdf?ci_sign=0cb637b49ca6754540e316b6ac2e3f1cf1f671e8 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 1.2kW
Case: SOT227B
Max. off-state voltage: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
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IXFT50N60P3 IXFT50N60P3 IXYS IXFH(T,Q)50N60P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
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IXFT50N60X IXFT50N60X IXYS IXFH(Q,T)50N60X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 195ns
Features of semiconductor devices: ultra junction x-class
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IXXA50N60B3 IXXA50N60B3 IXYS IXXA(p,h)50N60B3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: TO263
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
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IXXH50N60B3 IXXH50N60B3 IXYS IXXA(p,h)50N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
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IXXH50N60B3D1 IXXH50N60B3D1 IXYS IXXH50N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
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IXXH50N60C3 IXXH50N60C3 IXYS IXXH50N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
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IXXH50N60C3D1 IXXH50N60C3D1 IXYS IXXH50N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
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IXXP50N60B3 IXXP50N60B3 IXYS IXXA(p,h)50N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
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IXXH150N60C3 IXXH150N60C3 IXYS IXXH150N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 700A
Collector-emitter voltage: 600V
auf Bestellung 301 Stücke:
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5+15.32 EUR
10+13.38 EUR
30+12.04 EUR
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IXYN150N60B3 IXYN150N60B3 IXYS IXYN150N60B3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 830W
Case: SOT227B
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Collector current: 140A
Semiconductor structure: single transistor
Pulsed collector current: 750A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
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IXYA20N65C3 IXYA20N65C3 IXYS IXYA(H)20N65C3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
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IXYA20N65C3D1 IXYA20N65C3D1 IXYS IXY_20N65C3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
auf Bestellung 141 Stücke:
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20+3.65 EUR
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IXYH20N65C3 IXYH20N65C3 IXYS IXYA(H)20N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
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IXYP20N65C3D1 IXYP20N65C3D1 IXYS IXY_20N65C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
auf Bestellung 252 Stücke:
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15+5.08 EUR
21+3.43 EUR
50+2.69 EUR
100+2.46 EUR
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IXYP20N65C3D1M IXYP20N65C3D1M IXYS IXYP20N65C3D1M.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 50W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
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IXTP160N04T2 IXTA(P)160N04T2.pdf
IXTP160N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
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IXFH46N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F8F820&compId=IXFH46N65X2.pdf?ci_sign=18d8737ea270a8587aa3e2cf370bec98f3fe9809
IXFH46N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.76 EUR
Mindestbestellmenge: 10
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CPC1150N pVersion=0046&contRep=ZT&docId=005056AB82531EE995A3B9CF7BD978BF&compId=CPC1150N.pdf?ci_sign=c821c2d7d5de511af558a9ef727e8d94eaa1df7b
CPC1150N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 50Ω
Turn-off time: 2ms
Turn-on time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Switched voltage: max. 350V AC; max. 350V DC
auf Bestellung 504 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.7 EUR
100+3.09 EUR
500+2.47 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXFH14N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF8DAC82F1820&compId=IXFH(Q%2CT)14N80P_S.pdf?ci_sign=54c4a7d42ec81caabad0953bf61c033b9e6baf24
IXFH14N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFA180N10T2 IXFA(P)180N10T2.pdf
IXFA180N10T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.31 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXFP180N10T2 IXFA(P)180N10T2.pdf
IXFP180N10T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.75 EUR
13+5.71 EUR
15+4.99 EUR
50+4.93 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXYH75N65C3H1 IXYH75N65C3H1.pdf
IXYH75N65C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IXYN75N65C3D1 IXYN75N65C3D1.pdf
IXYN75N65C3D1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Max. off-state voltage: 650V
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 360A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFP34N65X2 IXF_34N65X2.pdf
IXFP34N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.61 EUR
13+5.58 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
CPC1106N CPC1106N.pdf
CPC1106N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-off time: 10ms
Turn-on time: 10ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 1.5kV
Case: SOP4
Mounting: SMT
Kind of output: MOSFET
auf Bestellung 2866 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.53 EUR
50+1.44 EUR
60+1.2 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
CPC1106NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75E80C7&compId=CPC1106N.pdf?ci_sign=8c782f12f65952eb66dd4b4c0c46f9f3e8745e8a
CPC1106NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 75mA; max.60VAC
Case: SOP4
On-state resistance: 10Ω
Turn-off time: 10ms
Turn-on time: 10ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 75mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Switched voltage: max. 60V AC; max. 60V DC
auf Bestellung 757 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
47+1.54 EUR
100+1.36 EUR
500+1.16 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IXGT72N60A3 IXG_72N60A3.pdf
IXGT72N60A3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO268
Type of transistor: IGBT
Power dissipation: 540W
Case: TO268
Mounting: SMD
Gate charge: 230nC
Kind of package: tube
Collector current: 72A
Pulsed collector current: 400A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: GenX3™
Turn-on time: 61ns
Turn-off time: 885ns
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.57 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXGH72N60A3 IXG_72N60A3.pdf
IXGH72N60A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Power dissipation: 540W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Collector current: 72A
Pulsed collector current: 400A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: GenX3™; XPT™
Turn-on time: 61ns
Turn-off time: 885ns
auf Bestellung 236 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.54 EUR
10+10.37 EUR
30+7.86 EUR
120+7.44 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
DSEI30-06A description DSEI30-06A.pdf
DSEI30-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 37A; tube; Ifsm: 300A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 37A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA22N60P3 IXFA(H,P,Q)22N60P3.pdf
IXFA22N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.82 EUR
14+5.23 EUR
16+4.62 EUR
50+4.15 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXFH22N60P IXFH22N60P.pdf
IXFH22N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.21 EUR
10+7.25 EUR
11+6.52 EUR
30+6.42 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFH22N60P3 IXFA(H,P,Q)22N60P3.pdf
IXFH22N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 580 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.09 EUR
15+5.11 EUR
30+4.69 EUR
120+4.65 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXFP22N60P3 IXFA(H,P,Q)22N60P3.pdf
IXFP22N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.13 EUR
14+5.26 EUR
50+4.58 EUR
100+4.28 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IXKH35N60C5 IXKH35N60C5.pdf
IXKH35N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; 357W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Gate charge: 60nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXKN75N60C pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B5CF884CAC483E28&compId=IXKN75N60C-DTE.pdf?ci_sign=0fa51332a57718507258414fc17eaf7b8be70c9b
IXKN75N60C
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 560W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Gate charge: 500nC
Kind of channel: enhancement
Reverse recovery time: 580ns
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXXH75N60C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB419567FC1820&compId=IXXH75N60C3.pdf?ci_sign=9e7c3e8f477c39f364e70435e4f49d0340f77efb
IXXH75N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 105ns
Turn-off time: 165ns
Gate-emitter voltage: ±20V
Collector current: 75A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXXH75N60C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB43B72332F820&compId=IXXH75N60C3D1.pdf?ci_sign=7226b060f7541cfae9705b803247e882175885cd
IXXH75N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 185ns
Produkt ist nicht verfügbar
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IXFN120N65X2 IXFN120N65X2.pdf
IXFN120N65X2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 108A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 24mΩ
Kind of channel: enhancement
Pulsed drain current: 240A
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate charge: 240nC
Reverse recovery time: 220ns
Produkt ist nicht verfügbar
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IXFN26N120P IXFN26N120P.pdf
IXFN26N120P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.5Ω
Pulsed drain current: 60A
Power dissipation: 695W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 255nC
Reverse recovery time: 300ns
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+78.52 EUR
3+69.34 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CPC1114N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75FE0C7&compId=CPC1114N.pdf?ci_sign=36ecf46fb10f7b97fccf3227e429fc88dfec2307
CPC1114N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Case: SOP4
On-state resistance: 2Ω
Turn-off time: 5ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.4A
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Switched voltage: max. 60V AC; max. 60V DC
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.19 EUR
40+1.83 EUR
54+1.34 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IXTK210P10T pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794B99F61BE8748&compId=IXTK210P10T.pdf?ci_sign=770cd11c3591d5f99ee9f471b3427981351a0ec8
IXTK210P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Kind of channel: enhancement
Technology: TrenchP™
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTA76N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4165ECB579820&compId=IXTA(H%2CI%2CP%2CQ)76N25T.pdf?ci_sign=5561f98ce5cfa59f8e5ad5e0fac5ca227be0863e
IXTA76N25T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 148ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA76P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0666B5AC438BF&compId=IXT_76P10T_HV.pdf?ci_sign=885b69a53fc37e69ce9f6124910ae9a6856f96fd
IXTA76P10T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.79 EUR
11+6.95 EUR
12+6.42 EUR
13+5.63 EUR
50+4.69 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXFN110N85X IXFN110N85X.pdf
IXFN110N85X
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 220A
Power dissipation: 1170W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 425nC
Reverse recovery time: 205ns
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+90.7 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFN180N15P description IXFN180N15P.pdf
IXFN180N15P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 150A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 11mΩ
Pulsed drain current: 380A
Power dissipation: 680W
Technology: HiPerFET™; PolarHT™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 240nC
Reverse recovery time: 200ns
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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IXFB150N65X2 IXFB150N65X2.pdf
IXFB150N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Power dissipation: 1.56kW
Case: PLUS264™
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhancement
Reverse recovery time: 260ns
On-state resistance: 17mΩ
Drain current: 150A
Gate-source voltage: ±30V
Technology: HiPerFET™; X2-Class
Drain-source voltage: 650V
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.03 EUR
10+31.55 EUR
Mindestbestellmenge: 3
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VUO68-16NO7 pVersion=0046&contRep=ZT&docId=E2920A1362DBFCF19A99005056AB752F&compId=VUO68-16NO7.pdf?ci_sign=fbd0ecee230da44ce53781abb73e734948a92ccc
VUO68-16NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 68A; Ifsm: 300A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 68A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.5V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.86 EUR
5+17.59 EUR
10+16.55 EUR
Mindestbestellmenge: 4
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IX4340N pVersion=0046&contRep=ZT&docId=005056AB82531EE98D86254426D5D8BF&compId=IX4340.pdf?ci_sign=560a08df3f47fc5e55b105888745757deeb6a350
IX4340N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Case: SO8
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: non-inverting
auf Bestellung 874 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
71+1.01 EUR
86+0.84 EUR
100+0.77 EUR
300+0.68 EUR
Mindestbestellmenge: 44
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IX4340NE pVersion=0046&contRep=ZT&docId=005056AB82531EE98D86254426D5D8BF&compId=IX4340.pdf?ci_sign=560a08df3f47fc5e55b105888745757deeb6a350
IX4340NE
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Case: SO8-EP
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: non-inverting
auf Bestellung 920 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
75+0.96 EUR
86+0.83 EUR
106+0.68 EUR
Mindestbestellmenge: 52
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IX4340NETR IX4340NE?assetguid=B6D399FA-9C99-4C15-B6C0-B87CEC93F28F
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Case: SO8-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: non-inverting
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IX4340NTR littelfuse-integrated-circuits-ix4340-datasheet?assetguid=628db25e-f5aa-46f2-a8e9-89ea7f36cc00
IX4340NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: non-inverting
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CLA100E1200HB CLA100E1200HB.pdf
CLA100E1200HB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 160A
Load current: 100A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.19kA
auf Bestellung 355 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.18 EUR
10+7.25 EUR
12+6.45 EUR
30+6.23 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXFP20N85X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD263488393820&compId=IXFH(P)20N85X.pdf?ci_sign=7c12a971503592693c6f40300c433ab581bc443f
IXFP20N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 63nC
Reverse recovery time: 190ns
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.76 EUR
Mindestbestellmenge: 19
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IXKP20N60C5M IXKP20N60C5M.pdf
IXKP20N60C5M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; TO220FP; 340ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Reverse recovery time: 340ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP20N65X2M IXTP20N65X2M.pdf
IXTP20N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 36W; TO220FP; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
Reverse recovery time: 0.35µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYP20N65B3D1 IXYP20N65B3D1.pdf
IXYP20N65B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Collector-emitter voltage: 650V
Turn-on time: 39ns
Gate charge: 29nC
Turn-off time: 271ns
Produkt ist nicht verfügbar
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IXKH20N60C5 IXK(H)20N60C5.pdf
IXKH20N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Gate charge: 32nC
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
10+7.16 EUR
12+6.33 EUR
30+5.69 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXTP60N20T IXTA(P,Q)60N20T.pdf
IXTP60N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
Mounting: THT
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Power dissipation: 500W
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.39 EUR
13+5.51 EUR
25+4.53 EUR
50+4.48 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ60N20T IXTA(P,Q)60N20T.pdf
IXTQ60N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
Mounting: THT
Kind of package: tube
Case: TO3P
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Power dissipation: 500W
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.38 EUR
16+4.76 EUR
30+4.22 EUR
120+3.55 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IXYN120N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F33CFF369FB820&compId=IXYN120N120C3.pdf?ci_sign=0cb637b49ca6754540e316b6ac2e3f1cf1f671e8
IXYN120N120C3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 1.2kW
Case: SOT227B
Max. off-state voltage: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFT50N60P3 IXFH(T,Q)50N60P3.pdf
IXFT50N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.01 EUR
30+10.25 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFT50N60X IXFH(Q,T)50N60X.pdf
IXFT50N60X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 195ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.23 EUR
6+13.71 EUR
10+12.08 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXXA50N60B3 IXXA(p,h)50N60B3.pdf
IXXA50N60B3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: TO263
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IXXH50N60B3 IXXA(p,h)50N60B3.pdf
IXXH50N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IXXH50N60B3D1 IXXH50N60B3D1.pdf
IXXH50N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IXXH50N60C3 IXXH50N60C3.pdf
IXXH50N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXXH50N60C3D1 IXXH50N60C3D1.pdf
IXXH50N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IXXP50N60B3 IXXA(p,h)50N60B3.pdf
IXXP50N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IXXH150N60C3 IXXH150N60C3.pdf
IXXH150N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 700A
Collector-emitter voltage: 600V
auf Bestellung 301 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.32 EUR
10+13.38 EUR
30+12.04 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXYN150N60B3 IXYN150N60B3.pdf
IXYN150N60B3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 830W
Case: SOT227B
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Collector current: 140A
Semiconductor structure: single transistor
Pulsed collector current: 750A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYA20N65C3 IXYA(H)20N65C3.pdf
IXYA20N65C3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYA20N65C3D1 IXY_20N65C3D1.pdf
IXYA20N65C3D1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.06 EUR
20+3.65 EUR
23+3.23 EUR
50+2.9 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IXYH20N65C3 IXYA(H)20N65C3.pdf
IXYH20N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYP20N65C3D1 IXY_20N65C3D1.pdf
IXYP20N65C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
auf Bestellung 252 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.08 EUR
21+3.43 EUR
50+2.69 EUR
100+2.46 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IXYP20N65C3D1M IXYP20N65C3D1M.pdf
IXYP20N65C3D1M
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 50W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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