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IXYA20N120B4HV-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 68A; 375W; TO263HV
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 68A
Power dissipation: 375W
Case: TO263HV
Mounting: SMD
Kind of package: reel; tape
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IXYA20N120C3HV-TRL IXYA20N120C3HV-TRL IXYS DS100484BIXYHPA20N120C3HV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 278W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 278W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Turn-off time: 90ns
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IXYA20N120C4HV-TRL IXYA20N120C4HV-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 68A; 375W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 68A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
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IXYH20N120C3 IXYH20N120C3 IXYS IXYH(P)20N120C3_HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
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IXYH20N120C4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 36A; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 36A
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
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IXYJ20N120C3D1 IXYS IXYJ20N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 21A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 20ns
Turn-off time: 90ns
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IXYP20N120A4 IXYP20N120A4 IXYS littelfuse-discrete-igbts-ixy-20n120a4-datasheet?assetguid=b40a9e42-70b2-4715-a4d2-5a93d0449e25 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 135A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
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IXYP20N120B4 IXYP20N120B4 IXYS littelfuse-discrete-igbts-ixy-20n120b4-datasheet?assetguid=aeb4cb01-5ee7-4115-97e3-a99b8c505c4e Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 76A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 76A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 130A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-off time: 200ns
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IXYP20N120C4 IXYP20N120C4 IXYS littelfuse-discrete-igbts-ixy-20n120c4-datasheet?assetguid=3c16feb5-2ff7-4546-a254-e439f5e43f0d Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 68A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 68A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-off time: 160ns
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IXGK120N120A3 IXGK120N120A3 IXYS IXGK(x)120N120A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
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IXYK120N120B3 IXYS littelfuse-discrete-igbts-ixy-120n120b3-datasheet?assetguid=18553f1c-eef0-4d23-a446-4aba83b01353 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 320A; 1.5kW; TO264
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 320A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Kind of package: tube
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IXGK120N120B3 IXGK120N120B3 IXYS IXGK(x)120N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
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IXYN120N120C3 IXYN120N120C3 IXYS IXYN120N120C3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B
Technology: GenX3™; XPT™
Collector current: 120A
Power dissipation: 1.2kW
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
Mechanical mounting: screw
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MMIX1G120N120A3V1 IXYS MMIX1G120N120A3V1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 105A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
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IXTU4N70X2 IXTU4N70X2 IXYS ixty2n65x2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
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IXTH50N30L2 IXTH50N30L2 IXYS IXTH50N30L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 540W; TO247-3; 430ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 50A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 72mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 430ns
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IXBOD2-04 IXYS IXBOD2.pdf Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; 2nd Gen; 400V; bulk
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Technology: 2nd Gen
Breakover voltage: 400V
Kind of package: bulk
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MD16130S-DKM2MM IXYS media?resourcetype=datasheets&itemid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8&filename=littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 130A; package S
Mechanical mounting: screw
Electrical mounting: screw
Max. forward impulse current: 3.5kA
Max. forward voltage: 1.5V
Type of semiconductor module: diode
Max. off-state voltage: 1.6kV
Load current: 130A
Max. load current: 204A
Kind of package: bulk
Semiconductor structure: common cathode; double
Case: package S
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IXTH10N100D2 IXTH10N100D2 IXYS IXTH(T)10N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
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IXTT10N100D IXTT10N100D IXYS IXTH(T)10N100D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 850ns
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IXTT10N100D2 IXTT10N100D2 IXYS IXTH(T)10N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO268
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
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IXTY01N100D IXTY01N100D IXYS IXTP(Y)01N100D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO252
On-state resistance: 80Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 2ns
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IXTT50P10 IXTT50P10 IXYS IXT_50P10.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Mounting: SMD
Power dissipation: 300W
Gate charge: 0.14µC
Polarisation: unipolar
Drain current: -50A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 55mΩ
Reverse recovery time: 180ns
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IXFB62N80Q3 IXFB62N80Q3 IXYS IXFB62N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 800V; 62A; 1560W; 300ns
Case: PLUS264™
Mounting: THT
Kind of package: tube
Power dissipation: 1.56kW
Gate charge: 0.27µC
Polarisation: unipolar
Technology: HiPerFET™; Q3-Class
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Reverse recovery time: 300ns
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IXFN32N80P IXFN32N80P IXYS IXFN32N80P.pdf Category: Transistor modules
Description: Module; single transistor; 800V; 29A; SOT227B; screw; Idm: 250A
Case: SOT227B
Pulsed drain current: 250A
Type of semiconductor module: MOSFET transistor
Power dissipation: 625W
Gate charge: 150nC
Polarisation: unipolar
Technology: HiPerFET™; PolarHV™
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 800V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
On-state resistance: 0.27Ω
Reverse recovery time: 250ns
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IXFN62N80Q3 IXFN62N80Q3 IXYS IXFN62N80Q3.pdf Category: Transistor modules
Description: Module; single transistor; 800V; 49A; SOT227B; screw; Idm: 180A
Case: SOT227B
Pulsed drain current: 180A
Type of semiconductor module: MOSFET transistor
Power dissipation: 960W
Gate charge: 0.27µC
Polarisation: unipolar
Technology: HiPerFET™; Q3-Class
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 800V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
On-state resistance: 0.14Ω
Reverse recovery time: 300ns
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IXFK32N80P IXFK32N80P IXYS IXFK(X)32N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 830W
Gate charge: 150nC
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
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IXFR32N80P IXFR32N80P IXYS IXFR32N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 300W
Gate charge: 150nC
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.29Ω
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IXFR32N80Q3 IXFR32N80Q3 IXYS IXFR32N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 500W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 500W
Gate charge: 0.14µC
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.3Ω
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IXFX32N80P IXFX32N80P IXYS IXFK(X)32N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 830W
Gate charge: 150nC
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
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IXFX32N80Q3 IXFX32N80Q3 IXYS IXFK(X)32N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 1kW
Gate charge: 0.14µC
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
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CS19-12HO1 CS19-12HO1 IXYS CS19-12HO1.pdf description Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 20A
Case: TO220AB
Mounting: THT
Max. load current: 31A
Max. forward impulse current: 180A
Kind of package: tube
Gate current: 28mA
Type of thyristor: thyristor
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CLA5E1200UC-TRL CLA5E1200UC-TRL IXYS CLA5E1200UC.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; DPAK; SMD; tube
Max. off-state voltage: 1.2kV
Load current: 5A
Case: DPAK
Mounting: SMD
Max. load current: 7.8A
Max. forward impulse current: 60A
Kind of package: tube
Gate current: 30/50mA
Type of thyristor: thyristor
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31+2.77 EUR
32+2.73 EUR
100+2.53 EUR
250+2.42 EUR
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CS22-12IO1M CS22-12IO1M IXYS CS22-12IO1M-DTE.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 25A; 16A; Igt: 30mA; TO220FP; THT; tube
Max. off-state voltage: 1.2kV
Load current: 16A
Case: TO220FP
Mounting: THT
Max. load current: 25A
Max. forward impulse current: 0.3kA
Kind of package: tube
Gate current: 30mA
Type of thyristor: thyristor
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CLA15E1200NPB CLA15E1200NPB IXYS CLA15E1200NPB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 40mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 15A
Case: TO220AB
Mounting: THT
Max. load current: 33A
Max. forward impulse current: 185A
Kind of package: tube
Features of semiconductor devices: two gate polarities
Gate current: 40mA
Type of thyristor: thyristor
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IX2127G IX2127G IXYS IX2127.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
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IXTK90N25L2 IXTK90N25L2 IXYS IXTK(X)90N25L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; TO264; 266ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Power dissipation: 960W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 266ns
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CPC1393GR CPC1393GR IXYS CPC1393.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 50Ω
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NO
Turn-on time: 5ms
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CPC1394GR CPC1394GR IXYS CPC1394.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 3ms
On-state resistance: 40Ω
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NO
Turn-on time: 5ms
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CPC1333GR CPC1333GR IXYS CPC1333.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 3ms
On-state resistance: 30Ω
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NC
Turn-on time: 2ms
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CPC1394GV CPC1394GV IXYS CPC1394.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 3ms
On-state resistance: 40Ω
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NO
Turn-on time: 5ms
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MIXG450PF1700TSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 435A
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Technology: X2PT
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: SimBus F
Collector current: 435A
Topology: IGBT half-bridge; NTC thermistor
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IXFH160N15T2 IXFH160N15T2 IXYS IXFH160N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 160A
Power dissipation: 880W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 253nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXYH60N90C3 IXYH60N90C3 IXYS IXYH60N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 60A; 750W; TO247-3
Type of transistor: IGBT
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 310A
Turn-on time: 104ns
Turn-off time: 268ns
Gate-emitter voltage: ±20V
Collector current: 60A
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IXDD604SI IXDD604SI IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXDD604D2TR IXDD604D2TR IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXDD604SITR IXDD604SITR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXGH50N90B2D1 IXGH50N90B2D1 IXYS IXG_50N90B2D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Technology: GenX3™; HiPerFAST™; PT
Turn-on time: 48ns
Turn-off time: 820ns
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IXGH50N90B2 IXGH50N90B2 IXYS IXGH(T)50N90B2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Technology: HiPerFAST™; XPT™
Turn-on time: 48ns
Turn-off time: 820ns
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IXYN80N90C3H1 IXYN80N90C3H1 IXYS IXYN80N90C3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 70A; SOT227B; 500W
Collector current: 70A
Power dissipation: 500W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 340A
Type of semiconductor module: IGBT
Technology: GenX3™; XPT™
Mechanical mounting: screw
Max. off-state voltage: 900V
Electrical mounting: screw
Semiconductor structure: single transistor
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IXYT80N90C3 IXYT80N90C3 IXYS IXYH(T)80N90C3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 80A
Power dissipation: 830W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 134ns
Turn-off time: 201ns
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IXYH80N90C3 IXYH80N90C3 IXYS IXYH(T)80N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 80A
Power dissipation: 830W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 134ns
Turn-off time: 201ns
Produkt ist nicht verfügbar
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IXFP50N20X3 IXFP50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
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IXFA50N20X3 IXFA50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXFH150N20T IXFH150N20T IXYS IXFH(T)150N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
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IXFT150N20T IXFT150N20T IXYS IXFH(T)150N20T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
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IXFA12N50P IXFA12N50P IXYS IXF_12N50P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
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IXFP12N50P IXFP12N50P IXYS IXF_12N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
On-state resistance: 0.5Ω
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IXTA12N50P IXTA12N50P IXYS IXTA12N50P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Technology: Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
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IXFH16N80P IXFH16N80P IXYS IXFH16N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: PolarHV™
Gate-source voltage: ±30V
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IXYA20N120B4HV-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 68A; 375W; TO263HV
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 68A
Power dissipation: 375W
Case: TO263HV
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IXYA20N120C3HV-TRL DS100484BIXYHPA20N120C3HV.pdf
IXYA20N120C3HV-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 278W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 278W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Turn-off time: 90ns
Produkt ist nicht verfügbar
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IXYA20N120C4HV-TRL
IXYA20N120C4HV-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 68A; 375W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 68A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IXYH20N120C3 IXYH(P)20N120C3_HV.pdf
IXYH20N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Produkt ist nicht verfügbar
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IXYH20N120C4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 36A; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 36A
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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IXYJ20N120C3D1 IXYJ20N120C3D1.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 21A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 20ns
Turn-off time: 90ns
Produkt ist nicht verfügbar
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IXYP20N120A4 littelfuse-discrete-igbts-ixy-20n120a4-datasheet?assetguid=b40a9e42-70b2-4715-a4d2-5a93d0449e25
IXYP20N120A4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 135A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Produkt ist nicht verfügbar
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IXYP20N120B4 littelfuse-discrete-igbts-ixy-20n120b4-datasheet?assetguid=aeb4cb01-5ee7-4115-97e3-a99b8c505c4e
IXYP20N120B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 76A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 76A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 130A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-off time: 200ns
Produkt ist nicht verfügbar
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IXYP20N120C4 littelfuse-discrete-igbts-ixy-20n120c4-datasheet?assetguid=3c16feb5-2ff7-4546-a254-e439f5e43f0d
IXYP20N120C4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 68A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 68A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-off time: 160ns
Produkt ist nicht verfügbar
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IXGK120N120A3 IXGK(x)120N120A3.pdf
IXGK120N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
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IXYK120N120B3 littelfuse-discrete-igbts-ixy-120n120b3-datasheet?assetguid=18553f1c-eef0-4d23-a446-4aba83b01353
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 320A; 1.5kW; TO264
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 320A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Kind of package: tube
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IXGK120N120B3 IXGK(x)120N120B3.pdf
IXGK120N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
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IXYN120N120C3 IXYN120N120C3.pdf
IXYN120N120C3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B
Technology: GenX3™; XPT™
Collector current: 120A
Power dissipation: 1.2kW
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
Mechanical mounting: screw
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MMIX1G120N120A3V1 MMIX1G120N120A3V1.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 105A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
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IXTU4N70X2 ixty2n65x2.pdf
IXTU4N70X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
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27+3.17 EUR
30+2.86 EUR
34+2.52 EUR
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IXTH50N30L2 IXTH50N30L2.pdf
IXTH50N30L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 540W; TO247-3; 430ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 50A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 72mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 430ns
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IXBOD2-04 IXBOD2.pdf
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; 2nd Gen; 400V; bulk
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Technology: 2nd Gen
Breakover voltage: 400V
Kind of package: bulk
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MD16130S-DKM2MM media?resourcetype=datasheets&itemid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8&filename=littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 130A; package S
Mechanical mounting: screw
Electrical mounting: screw
Max. forward impulse current: 3.5kA
Max. forward voltage: 1.5V
Type of semiconductor module: diode
Max. off-state voltage: 1.6kV
Load current: 130A
Max. load current: 204A
Kind of package: bulk
Semiconductor structure: common cathode; double
Case: package S
Produkt ist nicht verfügbar
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IXTH10N100D2 IXTH(T)10N100D2.pdf
IXTH10N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
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IXTT10N100D IXTH(T)10N100D.pdf
IXTT10N100D
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 850ns
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IXTT10N100D2 IXTH(T)10N100D2.pdf
IXTT10N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO268
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
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IXTY01N100D IXTP(Y)01N100D.pdf
IXTY01N100D
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO252
On-state resistance: 80Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 2ns
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IXTT50P10 IXT_50P10.pdf
IXTT50P10
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Mounting: SMD
Power dissipation: 300W
Gate charge: 0.14µC
Polarisation: unipolar
Drain current: -50A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 55mΩ
Reverse recovery time: 180ns
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IXFB62N80Q3 IXFB62N80Q3.pdf
IXFB62N80Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 800V; 62A; 1560W; 300ns
Case: PLUS264™
Mounting: THT
Kind of package: tube
Power dissipation: 1.56kW
Gate charge: 0.27µC
Polarisation: unipolar
Technology: HiPerFET™; Q3-Class
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Reverse recovery time: 300ns
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IXFN32N80P IXFN32N80P.pdf
IXFN32N80P
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 800V; 29A; SOT227B; screw; Idm: 250A
Case: SOT227B
Pulsed drain current: 250A
Type of semiconductor module: MOSFET transistor
Power dissipation: 625W
Gate charge: 150nC
Polarisation: unipolar
Technology: HiPerFET™; PolarHV™
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 800V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
On-state resistance: 0.27Ω
Reverse recovery time: 250ns
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IXFN62N80Q3 IXFN62N80Q3.pdf
IXFN62N80Q3
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 800V; 49A; SOT227B; screw; Idm: 180A
Case: SOT227B
Pulsed drain current: 180A
Type of semiconductor module: MOSFET transistor
Power dissipation: 960W
Gate charge: 0.27µC
Polarisation: unipolar
Technology: HiPerFET™; Q3-Class
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 800V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
On-state resistance: 0.14Ω
Reverse recovery time: 300ns
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IXFK32N80P IXFK(X)32N80P.pdf
IXFK32N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 830W
Gate charge: 150nC
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
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IXFR32N80P IXFR32N80P.pdf
IXFR32N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 300W
Gate charge: 150nC
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.29Ω
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IXFR32N80Q3 IXFR32N80Q3.pdf
IXFR32N80Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 500W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 500W
Gate charge: 0.14µC
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.3Ω
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IXFX32N80P IXFK(X)32N80P.pdf
IXFX32N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 830W
Gate charge: 150nC
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
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IXFX32N80Q3 IXFK(X)32N80Q3.pdf
IXFX32N80Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 1kW
Gate charge: 0.14µC
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.27Ω
Produkt ist nicht verfügbar
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CS19-12HO1 description CS19-12HO1.pdf
CS19-12HO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 20A
Case: TO220AB
Mounting: THT
Max. load current: 31A
Max. forward impulse current: 180A
Kind of package: tube
Gate current: 28mA
Type of thyristor: thyristor
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23+3.72 EUR
28+3.08 EUR
50+2.46 EUR
100+2.43 EUR
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CLA5E1200UC-TRL CLA5E1200UC.pdf
CLA5E1200UC-TRL
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; DPAK; SMD; tube
Max. off-state voltage: 1.2kV
Load current: 5A
Case: DPAK
Mounting: SMD
Max. load current: 7.8A
Max. forward impulse current: 60A
Kind of package: tube
Gate current: 30/50mA
Type of thyristor: thyristor
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29+3.03 EUR
31+2.77 EUR
32+2.73 EUR
100+2.53 EUR
250+2.42 EUR
500+2.17 EUR
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CS22-12IO1M CS22-12IO1M-DTE.pdf
CS22-12IO1M
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 25A; 16A; Igt: 30mA; TO220FP; THT; tube
Max. off-state voltage: 1.2kV
Load current: 16A
Case: TO220FP
Mounting: THT
Max. load current: 25A
Max. forward impulse current: 0.3kA
Kind of package: tube
Gate current: 30mA
Type of thyristor: thyristor
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CLA15E1200NPB CLA15E1200NPB.pdf
CLA15E1200NPB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 40mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 15A
Case: TO220AB
Mounting: THT
Max. load current: 33A
Max. forward impulse current: 185A
Kind of package: tube
Features of semiconductor devices: two gate polarities
Gate current: 40mA
Type of thyristor: thyristor
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IX2127G IX2127.pdf
IX2127G
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
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IXTK90N25L2 IXTK(X)90N25L2.pdf
IXTK90N25L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; TO264; 266ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Power dissipation: 960W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 266ns
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CPC1393GR CPC1393.pdf
CPC1393GR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 5ms
On-state resistance: 50Ω
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NO
Turn-on time: 5ms
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CPC1394GR CPC1394.pdf
CPC1394GR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 3ms
On-state resistance: 40Ω
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NO
Turn-on time: 5ms
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CPC1333GR CPC1333.pdf
CPC1333GR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 3ms
On-state resistance: 30Ω
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NC
Turn-on time: 2ms
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CPC1394GV CPC1394.pdf
CPC1394GV
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Operating temperature: -40...85°C
Turn-off time: 3ms
On-state resistance: 40Ω
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NO
Turn-on time: 5ms
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MIXG450PF1700TSF
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 435A
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Technology: X2PT
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: SimBus F
Collector current: 435A
Topology: IGBT half-bridge; NTC thermistor
Produkt ist nicht verfügbar
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IXFH160N15T2 IXFH160N15T2.pdf
IXFH160N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 160A
Power dissipation: 880W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 253nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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8+10.97 EUR
30+8.91 EUR
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IXYH60N90C3 IXYH60N90C3.pdf
IXYH60N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 60A; 750W; TO247-3
Type of transistor: IGBT
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 310A
Turn-on time: 104ns
Turn-off time: 268ns
Gate-emitter voltage: ±20V
Collector current: 60A
auf Bestellung 257 Stücke:
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10+11.16 EUR
30+9.42 EUR
60+9.35 EUR
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IXDD604SI IXDD604PI.pdf
IXDD604SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 1291 Stücke:
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19+4.58 EUR
25+3.47 EUR
27+3.18 EUR
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IXDD604D2TR IXDD604PI.pdf
IXDD604D2TR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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IXDD604SITR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
IXDD604SITR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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IXGH50N90B2D1 IXG_50N90B2D1.pdf
IXGH50N90B2D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Technology: GenX3™; HiPerFAST™; PT
Turn-on time: 48ns
Turn-off time: 820ns
auf Bestellung 240 Stücke:
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4+21.6 EUR
5+20.08 EUR
10+17.89 EUR
30+15.09 EUR
60+14.14 EUR
120+13.57 EUR
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IXGH50N90B2 IXGH(T)50N90B2.pdf
IXGH50N90B2
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Technology: HiPerFAST™; XPT™
Turn-on time: 48ns
Turn-off time: 820ns
auf Bestellung 122 Stücke:
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8+10.89 EUR
9+9.81 EUR
10+8.66 EUR
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IXYN80N90C3H1 IXYN80N90C3H1.pdf
IXYN80N90C3H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 70A; SOT227B; 500W
Collector current: 70A
Power dissipation: 500W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 340A
Type of semiconductor module: IGBT
Technology: GenX3™; XPT™
Mechanical mounting: screw
Max. off-state voltage: 900V
Electrical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXYT80N90C3 IXYH(T)80N90C3.pdf
IXYT80N90C3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 80A
Power dissipation: 830W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 134ns
Turn-off time: 201ns
Produkt ist nicht verfügbar
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IXYH80N90C3 IXYH(T)80N90C3.pdf
IXYH80N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 80A
Power dissipation: 830W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 134ns
Turn-off time: 201ns
Produkt ist nicht verfügbar
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IXFP50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
IXFP50N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXFA50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
IXFA50N20X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXFH150N20T IXFH(T)150N20T.pdf
IXFH150N20T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFT150N20T IXFH(T)150N20T.pdf
IXFT150N20T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFA12N50P IXF_12N50P.pdf
IXFA12N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
22+3.99 EUR
50+3.63 EUR
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IXFP12N50P IXF_12N50P.pdf
IXFP12N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
On-state resistance: 0.5Ω
Produkt ist nicht verfügbar
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IXTA12N50P IXTA12N50P-DTE.pdf
IXTA12N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Technology: Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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IXFH16N80P IXFH16N80P.pdf
IXFH16N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: PolarHV™
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
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