IXFT50N60P3
Produktcode: 152198
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Weitere Produktangebote IXFT50N60P3 nach Preis ab 14.77 EUR bis 28.23 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXFT50N60P3 | Ixys Corporation |
Trans MOSFET N-CH 600V 50A 3-Pin(2+Tab) TO-268 |
auf Bestellung 102 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFT50N60P3 | IXYS |
MOSFETs 600V 50A 0.145Ohm PolarP3 Power MOSFET |
auf Bestellung 357 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFT50N60P3 | IXYS |
Description: MOSFET N-CH 600V 50A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V |
auf Bestellung 343 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFT50N60P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268 Type of transistor: N-MOSFET Power dissipation: 1.04kW Case: TO268 Mounting: SMD Kind of package: tube Drain-source voltage: 600V On-state resistance: 0.16Ω Gate charge: 94nC Polarisation: unipolar Drain current: 50A Kind of channel: enhancement |
auf Bestellung 102 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXFT50N60P3 |
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Hersteller: Ixys Corporation
Trans MOSFET N-CH 600V 50A 3-Pin(2+Tab) TO-268
Trans MOSFET N-CH 600V 50A 3-Pin(2+Tab) TO-268
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 25.34 EUR |
| 10+ | 20.59 EUR |
| IXFT50N60P3 |
|
Hersteller: IXYS
MOSFETs 600V 50A 0.145Ohm PolarP3 Power MOSFET
MOSFETs 600V 50A 0.145Ohm PolarP3 Power MOSFET
auf Bestellung 357 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.92 EUR |
| 10+ | 15.96 EUR |
| 120+ | 15.35 EUR |
| IXFT50N60P3 |
|
Hersteller: IXYS
Description: MOSFET N-CH 600V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Description: MOSFET N-CH 600V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
auf Bestellung 343 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.23 EUR |
| 30+ | 17.18 EUR |
| 60+ | 15.87 EUR |
| 120+ | 14.77 EUR |
| IXFT50N60P3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Case: TO268
Mounting: SMD
Kind of package: tube
Drain-source voltage: 600V
On-state resistance: 0.16Ω
Gate charge: 94nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Case: TO268
Mounting: SMD
Kind of package: tube
Drain-source voltage: 600V
On-state resistance: 0.16Ω
Gate charge: 94nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhancement
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)