auf Bestellung 537 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 50.65 EUR |
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Technische Details IXFN220N20X3 IXYS
Description: MOSFET N-CH 200V 160A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V.
Weitere Produktangebote IXFN220N20X3 nach Preis ab 35.42 EUR bis 71.50 EUR
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IXFN220N20X3 | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 200V 160A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V |
auf Bestellung 262 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN220N20X3 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 160A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 6.2mΩ Pulsed drain current: 500A Power dissipation: 390W Technology: HiPerFET™; X3-Class Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 128ns Gate charge: 204nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN220N20X3 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 160A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 6.2mΩ Pulsed drain current: 500A Power dissipation: 390W Technology: HiPerFET™; X3-Class Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 128ns Gate charge: 204nC Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN220N20X3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 200V 160A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN220N20X3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 200V 160A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN220N20X3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 200V 160A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |