IXFN220N20X3 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 200V 160A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 1+ | 54.14 EUR |
| 10+ | 40.11 EUR |
| 100+ | 35.59 EUR |
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Technische Details IXFN220N20X3 IXYS
Description: MOSFET N-CH 200V 160A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V.
Weitere Produktangebote IXFN220N20X3 nach Preis ab 49.24 EUR bis 71.5 EUR
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IXFN220N20X3 | Hersteller : IXYS |
MOSFET Modules MBLOC 200V 160A N-CH X3CLASS |
auf Bestellung 595 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN220N20X3 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±30V Reverse recovery time: 128ns Gate charge: 204nC On-state resistance: 6.2mΩ Technology: HiPerFET™; X3-Class Drain current: 160A Pulsed drain current: 500A Drain-source voltage: 200V Power dissipation: 390W Type of semiconductor module: MOSFET transistor |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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