| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MDD312-20N1 | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 2kV Type of semiconductor module: diode Semiconductor structure: double series Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.03V Load current: 310A Max. load current: 310A Max. forward impulse current: 10.8kA |
Produkt ist nicht verfügbar |
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MCD312-12io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.2kV Type of semiconductor module: diode-thyristor Semiconductor structure: double series Features of semiconductor devices: Kelvin terminal Electrical mounting: screw Mechanical mounting: screw Gate current: 150/220mA Threshold on-voltage: 0.8V Max. forward voltage: 1.06V Load current: 320A Max. load current: 520A Max. forward impulse current: 9.6kA Kind of package: bulk |
Produkt ist nicht verfügbar |
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CPC1976Y | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; 1-phase Type of relay: solid state Control current max.: 50mA Max. operating current: 2A Switched voltage: max. 240V AC Relay variant: 1-phase Mounting: THT Case: SIP4 Body dimensions: 21.08x10.16x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV Operating temperature: -40...85°C |
auf Bestellung 494 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1393GR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC Mounting: SMT Case: DIP4 Operating temperature: -40...85°C Kind of output: MOSFET Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA Max. operating current: 90mA On-state resistance: 50Ω Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source Insulation voltage: 5kV Type of relay: solid state Manufacturer series: OptoMOS Contacts configuration: SPST-NO Body dimensions: 4.57x6.35x3.3mm |
auf Bestellung 675 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1963G | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase Type of relay: solid state Max. operating current: 0.5A Switched voltage: max. 600V AC Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Switching method: zero voltage switching Operating temperature: -40...85°C Control current max.: 50mA Insulation voltage: 3.75kV Case: DIP6 Mounting: THT |
auf Bestellung 334 Stücke: Lieferzeit 14-21 Tag (e) |
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MDO600-16N1 | IXYS |
Category: Diode modulesDescription: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 1.01V Mechanical mounting: screw Type of semiconductor module: diode Semiconductor structure: single diode Electrical mounting: screw Case: Y1-CU Max. forward voltage: 1.01V Load current: 560A Max. forward impulse current: 12.8kA Max. off-state voltage: 1.6kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IXFN180N25T | IXYS |
Category: Transistor modules MOSFETDescription: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 250V Drain current: 168A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 12.9mΩ Pulsed drain current: 500A Power dissipation: 900W Technology: GigaMOS™ Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 200ns Gate charge: 364nC Kind of channel: enhancement |
auf Bestellung 279 Stücke: Lieferzeit 14-21 Tag (e) |
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| MCMA25P1600TA | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V Kind of package: bulk Type of semiconductor module: thyristor Semiconductor structure: double series Electrical mounting: screw Mechanical mounting: screw Case: TO240AA Gate current: 55/80mA Max. forward voltage: 1.52V Load current: 25A Max. off-state voltage: 1.6kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MDMA425P1600PTSF | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA Type of semiconductor module: diode Semiconductor structure: double series Electrical mounting: Press-Fit Mechanical mounting: screw Case: SimBus F Load current: 425A Max. off-state voltage: 1.6kV Max. forward impulse current: 10kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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VUO52-16NO1 | IXYS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 60A Max. forward impulse current: 350A Electrical mounting: FASTON connectors Version: module Max. forward voltage: 0.83V Leads: connectors Leads dimensions: 2x0.5mm Case: V1-A-Pack Mechanical mounting: screw |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN604PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -4...4A Number of channels: 2 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
auf Bestellung 238 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN604SIA | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -4...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
auf Bestellung 626 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN604SI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -4...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
auf Bestellung 879 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN604SIATR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -4...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IXDN602D2TR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DFN8 Output current: -2...2A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTN110N20L2 | IXYS |
Category: Transistor modules MOSFETDescription: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 275A Power dissipation: 735W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 24mΩ Gate charge: 500nC Kind of channel: enhancement Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: MOSFET transistor Technology: Linear L2™ Reverse recovery time: 420ns Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IXTK110N20L2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 110A Power dissipation: 960W Case: TO264 On-state resistance: 24mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 420ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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OMA160 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC Operating temperature: -40...85°C Manufacturer series: OptoMOS Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO Turn-on time: 125µs Turn-off time: 125µs Body dimensions: 8.38x6.35x3.3mm Max. operating current: 50mA Control current max.: 50mA On-state resistance: 100Ω Switched voltage: max. 250V AC; max. 250V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP6 |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1030NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Switched voltage: max. 350V AC; max. 350V DC Operating temperature: -40...85°C Manufacturer series: OptoMOS Insulation voltage: 1.5kV Kind of output: MOSFET Mounting: SMT Type of relay: solid state Case: SOP4 Contacts configuration: SPST-NO Turn-on time: 2ms Turn-off time: 1ms Body dimensions: 4.09x3.81x2.03mm Control current max.: 50mA Max. operating current: 120mA On-state resistance: 30Ω Relay variant: 1-phase; current source |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CPC1706Y | IXYS |
Category: DC Solid State RelaysDescription: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω Type of relay: solid state Max. operating current: 4A Switched voltage: max. 60V DC Mounting: THT Case: SOP4 Relay variant: current source Manufacturer series: OptoMOS Body dimensions: 21.08x10.16x3.3mm Turn-on time: 5ms Turn-off time: 2ms Contacts configuration: SPST-NO On-state resistance: 90mΩ Control current max.: 50mA Kind of output: MOSFET Insulation voltage: 2.5kV Operating temperature: -40...85°C |
auf Bestellung 449 Stücke: Lieferzeit 14-21 Tag (e) |
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VHFD37-16IO1 | IXYS |
Category: Single phase controlled bridge rectif.Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw Type of bridge rectifier: half-controlled Max. off-state voltage: 1.6kV Load current: 40A Max. forward impulse current: 280A Gate current: 50/80mA Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Case: V1-A-Pack Leads: connectors Leads dimensions: 2x0.5mm Features of semiconductor devices: field diodes; freewheelling diode |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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PLA191S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC Kind of output: MOSFET Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Turn-on time: 3ms Turn-off time: 1ms Body dimensions: 8.38x6.35x3.3mm Max. operating current: 250mA Control current max.: 50mA On-state resistance: 8Ω Switched voltage: max. 400V AC; max. 400V DC Insulation voltage: 5kV Relay variant: 1-phase; current source Case: DIP6 Type of relay: solid state Contacts configuration: SPST-NO |
auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEI30-10A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 185A Case: TO247-2 Max. forward voltage: 2V Power dissipation: 138W Reverse recovery time: 35ns Technology: FRED |
auf Bestellung 196 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH120N20P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3 Case: TO247-3 Mounting: THT Gate charge: 152nC Reverse recovery time: 100ns On-state resistance: 22mΩ Drain current: 120A Power dissipation: 714W Drain-source voltage: 200V Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Polar™ Polarisation: unipolar Type of transistor: N-MOSFET |
auf Bestellung 53 Stücke: Lieferzeit 14-21 Tag (e) |
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IXXH100N60B3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3 Mounting: THT Turn-off time: 350ns Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 480A Collector-emitter voltage: 600V Power dissipation: 830W Technology: GenX3™; Planar; XPT™ Type of transistor: IGBT Case: TO247-3 Kind of package: tube Turn-on time: 92ns Gate charge: 143nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IXDN609SI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 1340 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN609SIA | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 367 Stücke: Lieferzeit 14-21 Tag (e) |
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| LF2136BTR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Output current: -0.35...0.2A Operating temperature: -40...125°C Supply voltage: 10...20V Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Mounting: SMD Number of channels: 6 Voltage class: 600V Kind of package: reel; tape Case: SO28 Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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PBA150S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA Mounting: SMT Turn-on time: 2.5ms Turn-off time: 2.5ms Body dimensions: 9.65x6.35x3.3mm Control current max.: 50mA Max. operating current: 250mA On-state resistance: 7Ω Switched voltage: max. 250V AC; max. 250V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Operating temperature: -40...85°C |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA50N20P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO263 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: PolarHT™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IXFA34N65X3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO263 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: HiPerFET™; X3-Class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IXFH34N65X3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: HiPerFET™; X3-Class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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CPC2907B | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS Case: PowerSO8 Mounting: SMT Kind of output: MOSFET Contacts configuration: SPST-NO x2 Type of relay: solid state Operating temperature: -40...85°C Turn-off time: 0.25ms Turn-on time: 2.5ms On-state resistance: 0.15Ω Body dimensions: 21.08x10.16x3.3mm Control current max.: 50mA Max. operating current: 2A Switched voltage: max. 60V AC; max. 60V DC Insulation voltage: 4kV Relay variant: 1-phase; current source Manufacturer series: OptoMOS |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFR44N80P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 26A Power dissipation: 360W Case: ISOPLUS247™ On-state resistance: 0.19Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IXDN614PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 130ns Turn-on time: 140ns Supply voltage: 4.5...35V |
auf Bestellung 82 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1966YX6 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase Type of relay: solid state Control current max.: 50mA Max. operating current: 3A Switched voltage: max. 600V AC Relay variant: 1-phase Mounting: THT Case: SIP4 Body dimensions: 21.08x10.16x3.3mm Switching method: instantaneous switching Insulation voltage: 3.75kV Operating temperature: -40...85°C Turn-on time: 500µs |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1981Y | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 180mA Switched voltage: max. 1kV AC Manufacturer series: OptoMOS Relay variant: 1-phase On-state resistance: 18Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Turn-on time: 10ms Turn-off time: 5ms Body dimensions: 21.08x10.16x3.3mm Control current max.: 50mA Insulation voltage: 2.5kV Kind of output: MOSFET |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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DSA15IM200UC | IXYS |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 200V Load current: 15A Semiconductor structure: single diode Max. forward voltage: 0.78V Max. forward impulse current: 200A Kind of package: reel; tape Power dissipation: 75W |
auf Bestellung 1739 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG20C300PN | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W Technology: HiPerFRED™ 2nd Gen Case: TO220FP Semiconductor structure: common cathode; double Mounting: THT Type of diode: rectifying Kind of package: tube Reverse recovery time: 35ns Max. forward voltage: 1.27V Load current: 10A x2 Power dissipation: 35W Max. forward impulse current: 140A Max. off-state voltage: 300V Features of semiconductor devices: fast switching |
auf Bestellung 556 Stücke: Lieferzeit 14-21 Tag (e) |
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DPG20C300PB | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W Technology: HiPerFRED™ 2nd Gen Case: TO220AB Semiconductor structure: common cathode; double Mounting: THT Type of diode: rectifying Kind of package: tube Reverse recovery time: 35ns Heatsink thickness: 1.14...1.39mm Max. forward voltage: 1.27V Load current: 10A x2 Power dissipation: 65W Max. forward impulse current: 140A Max. off-state voltage: 300V Features of semiconductor devices: fast switching |
auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN602PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN602SIA | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
auf Bestellung 569 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1965G | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase Mounting: THT Type of relay: solid state Switching method: zero voltage switching Operating temperature: -40...85°C Body dimensions: 19.2x7.62x3.3mm Control current max.: 100mA Max. operating current: 1A Switched voltage: max. 260V AC Insulation voltage: 3.75kV Relay variant: 1-phase Case: DIP4 |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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MEK300-06DA | IXYS |
Category: Diode modulesDescription: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V Type of semiconductor module: diode Semiconductor structure: common cathode Max. off-state voltage: 0.6kV Load current: 304A Case: Y4-M6 Max. forward voltage: 1.19V Max. forward impulse current: 2.4kA Electrical mounting: screw Mechanical mounting: screw |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC2330N | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Case: SO8 Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Operating temperature: -40...85°C On-state resistance: 30Ω Turn-off time: 3ms Turn-on time: 3ms Body dimensions: 9.35x3.81x2.18mm Control current max.: 50mA Max. operating current: 120mA Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 1.5kV Manufacturer series: OptoMOS |
auf Bestellung 479 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP450P2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 43nC Reverse recovery time: 400ns Power dissipation: 300W On-state resistance: 0.33Ω Drain current: 16A Drain-source voltage: 500V Polarisation: unipolar Case: TO220AB Kind of channel: enhancement Mounting: THT |
auf Bestellung 176 Stücke: Lieferzeit 14-21 Tag (e) |
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MCD162-18io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Max. off-state voltage: 1.8kV Load current: 181A Max. forward impulse current: 6kA Case: Y4-M6 Electrical mounting: FASTON connectors; screw Kind of package: bulk Max. forward voltage: 1.03V Gate current: 150/200mA Threshold on-voltage: 0.88V Max. load current: 300A Semiconductor structure: double series Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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PD2401 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase Mounting: THT Type of relay: solid state Switching method: zero voltage switching Operating temperature: -40...85°C Body dimensions: 19.2x6.35x3.3mm Control current max.: 100mA Max. operating current: 1A Switched voltage: max. 500V AC Insulation voltage: 3.75kV Relay variant: 1-phase Case: DIP4 |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP50N20P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: PolarHT™ |
auf Bestellung 206 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTQ50N20P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO3P Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: PolarHT™ |
auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP50N20PM | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 20A Power dissipation: 90W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: Polar™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IXTX110N20L2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 110A Power dissipation: 960W Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Technology: Linear L2™ Reverse recovery time: 420ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IXTH16N50D2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 695W Case: TO247-3 On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: depletion Reverse recovery time: 130ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IXKH47N60C | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 290W Case: TO247-3 On-state resistance: 70mΩ Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: super junction coolmos |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IXXH80N65B4 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 625W Case: TO247-3 Mounting: THT Gate charge: 0.12µC Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 125ns Turn-off time: 222ns Gate-emitter voltage: ±20V Collector current: 80A Pulsed collector current: 430A |
auf Bestellung 263 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH110N10P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3 Case: TO247-3 Kind of package: tube Technology: HiPerFET™; Polar™ Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 110nC On-state resistance: 15mΩ Drain current: 110A Drain-source voltage: 100V Power dissipation: 480W Kind of channel: enhancement |
auf Bestellung 204 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1726Y | IXYS |
Category: DC Solid State RelaysDescription: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; OptoMOS; 0.75Ω Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 1A Switched voltage: max. 250V DC Manufacturer series: OptoMOS Relay variant: current source On-state resistance: 0.75Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 2ms Body dimensions: 21.08x10.16x3.3mm Control current max.: 50mA Insulation voltage: 2.5kV Kind of output: MOSFET |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
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CLA100E1200KB | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube Max. off-state voltage: 1.2kV Load current: 100A Case: TO264 Mounting: THT Max. load current: 160A Max. forward impulse current: 1.19kA Kind of package: tube Type of thyristor: thyristor Gate current: 80mA |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK150N30P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 197nC On-state resistance: 19mΩ Drain current: 150A Drain-source voltage: 300V Mounting: THT Power dissipation: 1.3kW Kind of package: tube Case: TO264 |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP120P065T | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns Kind of channel: enhancement Type of transistor: P-MOSFET Case: TO220AB Technology: TrenchP™ Mounting: THT Kind of package: tube Polarisation: unipolar Drain-source voltage: -65V Drain current: -120A Gate charge: 185nC Reverse recovery time: 53ns On-state resistance: 10mΩ Gate-source voltage: ±15V Power dissipation: 298W |
auf Bestellung 262 Stücke: Lieferzeit 14-21 Tag (e) |
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| MDD312-20N1 |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 310A
Max. forward impulse current: 10.8kA
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 310A
Max. forward impulse current: 10.8kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCD312-12io1 |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPC1976Y |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
auf Bestellung 494 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.92 EUR |
| 25+ | 4.86 EUR |
| 250+ | 4.43 EUR |
| CPC1393GR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Max. operating current: 90mA
On-state resistance: 50Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 5kV
Type of relay: solid state
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Body dimensions: 4.57x6.35x3.3mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Max. operating current: 90mA
On-state resistance: 50Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 5kV
Type of relay: solid state
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Body dimensions: 4.57x6.35x3.3mm
auf Bestellung 675 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.5 EUR |
| 31+ | 2.32 EUR |
| 35+ | 2.09 EUR |
| 50+ | 1.99 EUR |
| CPC1963G |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Type of relay: solid state
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Operating temperature: -40...85°C
Control current max.: 50mA
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Type of relay: solid state
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Operating temperature: -40...85°C
Control current max.: 50mA
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
auf Bestellung 334 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.42 EUR |
| 50+ | 6.84 EUR |
| 250+ | 5.49 EUR |
| MDO600-16N1 |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 1.01V
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Electrical mounting: screw
Case: Y1-CU
Max. forward voltage: 1.01V
Load current: 560A
Max. forward impulse current: 12.8kA
Max. off-state voltage: 1.6kV
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 1.01V
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Electrical mounting: screw
Case: Y1-CU
Max. forward voltage: 1.01V
Load current: 560A
Max. forward impulse current: 12.8kA
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFN180N25T |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 364nC
Kind of channel: enhancement
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 364nC
Kind of channel: enhancement
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 32.09 EUR |
| 5+ | 27.31 EUR |
| 10+ | 26.44 EUR |
| MCMA25P1600TA |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Kind of package: bulk
Type of semiconductor module: thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Case: TO240AA
Gate current: 55/80mA
Max. forward voltage: 1.52V
Load current: 25A
Max. off-state voltage: 1.6kV
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Kind of package: bulk
Type of semiconductor module: thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Case: TO240AA
Gate current: 55/80mA
Max. forward voltage: 1.52V
Load current: 25A
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MDMA425P1600PTSF |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: Press-Fit
Mechanical mounting: screw
Case: SimBus F
Load current: 425A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: Press-Fit
Mechanical mounting: screw
Case: SimBus F
Load current: 425A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VUO52-16NO1 |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 0.83V
Leads: connectors
Leads dimensions: 2x0.5mm
Case: V1-A-Pack
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 0.83V
Leads: connectors
Leads dimensions: 2x0.5mm
Case: V1-A-Pack
Mechanical mounting: screw
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 34.56 EUR |
| 5+ | 33.46 EUR |
| IXDN604PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2 EUR |
| 50+ | 1.46 EUR |
| 53+ | 1.36 EUR |
| IXDN604SIA |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 626 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.69 EUR |
| 50+ | 1.46 EUR |
| IXDN604SI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 879 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.19 EUR |
| 50+ | 2.7 EUR |
| 100+ | 2.52 EUR |
| 200+ | 2.35 EUR |
| 300+ | 2.3 EUR |
| IXDN604SIATR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXDN602D2TR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.52 EUR |
| 44+ | 1.63 EUR |
| 52+ | 1.39 EUR |
| 59+ | 1.23 EUR |
| 100+ | 1.1 EUR |
| 250+ | 0.96 EUR |
| 500+ | 0.94 EUR |
| IXTN110N20L2 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Technology: Linear L2™
Reverse recovery time: 420ns
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Technology: Linear L2™
Reverse recovery time: 420ns
Semiconductor structure: single transistor
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| IXTK110N20L2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
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| OMA160 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 125µs
Turn-off time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 125µs
Turn-off time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.19 EUR |
| 17+ | 4.25 EUR |
| 25+ | 3.69 EUR |
| CPC1030NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Relay variant: 1-phase; current source
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| CPC1706Y |
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Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Max. operating current: 4A
Switched voltage: max. 60V DC
Mounting: THT
Case: SOP4
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 21.08x10.16x3.3mm
Turn-on time: 5ms
Turn-off time: 2ms
Contacts configuration: SPST-NO
On-state resistance: 90mΩ
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Max. operating current: 4A
Switched voltage: max. 60V DC
Mounting: THT
Case: SOP4
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 21.08x10.16x3.3mm
Turn-on time: 5ms
Turn-off time: 2ms
Contacts configuration: SPST-NO
On-state resistance: 90mΩ
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
auf Bestellung 449 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.73 EUR |
| 24+ | 3.1 EUR |
| 25+ | 2.89 EUR |
| VHFD37-16IO1 |
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Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 42.04 EUR |
| 10+ | 39.04 EUR |
| PLA191S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.73 EUR |
| 100+ | 4.38 EUR |
| DSEI30-10A | ![]() |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 185A
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 138W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 185A
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 138W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.83 EUR |
| IXFH120N20P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Case: TO247-3
Mounting: THT
Gate charge: 152nC
Reverse recovery time: 100ns
On-state resistance: 22mΩ
Drain current: 120A
Power dissipation: 714W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Case: TO247-3
Mounting: THT
Gate charge: 152nC
Reverse recovery time: 100ns
On-state resistance: 22mΩ
Drain current: 120A
Power dissipation: 714W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Type of transistor: N-MOSFET
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 14.09 EUR |
| 7+ | 11.34 EUR |
| 10+ | 10.51 EUR |
| IXXH100N60B3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
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| IXDN609SI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 1340 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.17 EUR |
| 32+ | 2.3 EUR |
| 33+ | 2.19 EUR |
| 50+ | 2.1 EUR |
| 100+ | 2.04 EUR |
| IXDN609SIA |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 367 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.92 EUR |
| 52+ | 1.4 EUR |
| 55+ | 1.32 EUR |
| LF2136BTR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Case: SO28
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Case: SO28
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen
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| PBA150S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Mounting: SMT
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Mounting: SMT
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.72 EUR |
| 10+ | 7.35 EUR |
| IXTA50N20P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Produkt ist nicht verfügbar
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| IXFA34N65X3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IXFH34N65X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPC2907B |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Case: PowerSO8
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
On-state resistance: 0.15Ω
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Case: PowerSO8
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
On-state resistance: 0.15Ω
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.47 EUR |
| IXFR44N80P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXDN614PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.08 EUR |
| 28+ | 2.62 EUR |
| 50+ | 2.03 EUR |
| CPC1966YX6 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: instantaneous switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-on time: 500µs
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: instantaneous switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-on time: 500µs
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.62 EUR |
| 11+ | 6.66 EUR |
| 12+ | 6.31 EUR |
| 25+ | 6.28 EUR |
| CPC1981Y |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 180mA
Switched voltage: max. 1kV AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 18Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 10ms
Turn-off time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 180mA
Switched voltage: max. 1kV AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 18Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 10ms
Turn-off time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.58 EUR |
| 14+ | 5.11 EUR |
| DSA15IM200UC |
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Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
auf Bestellung 1739 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.82 EUR |
| 52+ | 1.39 EUR |
| 59+ | 1.23 EUR |
| 100+ | 1.12 EUR |
| DPG20C300PN |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP
Semiconductor structure: common cathode; double
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.27V
Load current: 10A x2
Power dissipation: 35W
Max. forward impulse current: 140A
Max. off-state voltage: 300V
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220FP; 35W
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP
Semiconductor structure: common cathode; double
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.27V
Load current: 10A x2
Power dissipation: 35W
Max. forward impulse current: 140A
Max. off-state voltage: 300V
Features of semiconductor devices: fast switching
auf Bestellung 556 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.23 EUR |
| 36+ | 2.02 EUR |
| 41+ | 1.77 EUR |
| 46+ | 1.59 EUR |
| 48+ | 1.5 EUR |
| 250+ | 1.49 EUR |
| DPG20C300PB |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Technology: HiPerFRED™ 2nd Gen
Case: TO220AB
Semiconductor structure: common cathode; double
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A x2
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 300V
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Technology: HiPerFRED™ 2nd Gen
Case: TO220AB
Semiconductor structure: common cathode; double
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A x2
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 300V
Features of semiconductor devices: fast switching
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.76 EUR |
| 29+ | 2.53 EUR |
| 36+ | 2 EUR |
| 38+ | 1.89 EUR |
| IXDN602PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 54+ | 1.33 EUR |
| 69+ | 1.04 EUR |
| 74+ | 0.97 EUR |
| IXDN602SIA |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 569 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.43 EUR |
| 72+ | 1 EUR |
| 77+ | 0.93 EUR |
| CPC1965G |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x7.62x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP4
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x7.62x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP4
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 7.95 EUR |
| MEK300-06DA |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Type of semiconductor module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 0.6kV
Load current: 304A
Case: Y4-M6
Max. forward voltage: 1.19V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Type of semiconductor module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 0.6kV
Load current: 304A
Case: Y4-M6
Max. forward voltage: 1.19V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 84.94 EUR |
| 2+ | 83.66 EUR |
| CPC2330N |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Case: SO8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
On-state resistance: 30Ω
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Case: SO8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
On-state resistance: 30Ω
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.6 EUR |
| 50+ | 2.16 EUR |
| 150+ | 2.06 EUR |
| IXTP450P2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Reverse recovery time: 400ns
Power dissipation: 300W
On-state resistance: 0.33Ω
Drain current: 16A
Drain-source voltage: 500V
Polarisation: unipolar
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Reverse recovery time: 400ns
Power dissipation: 300W
On-state resistance: 0.33Ω
Drain current: 16A
Drain-source voltage: 500V
Polarisation: unipolar
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.86 EUR |
| 50+ | 3.15 EUR |
| 100+ | 2.92 EUR |
| MCD162-18io1 |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. off-state voltage: 1.8kV
Load current: 181A
Max. forward impulse current: 6kA
Case: Y4-M6
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.03V
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. load current: 300A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. off-state voltage: 1.8kV
Load current: 181A
Max. forward impulse current: 6kA
Case: Y4-M6
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.03V
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. load current: 300A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 79.69 EUR |
| PD2401 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP4
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP4
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.22 EUR |
| 25+ | 6.91 EUR |
| IXTP50N20P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.89 EUR |
| 18+ | 4.02 EUR |
| 50+ | 3.55 EUR |
| 100+ | 3.35 EUR |
| IXTQ50N20P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.82 EUR |
| 16+ | 4.76 EUR |
| 30+ | 4.26 EUR |
| 120+ | 3.66 EUR |
| IXTP50N20PM |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: Polar™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTX110N20L2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Technology: Linear L2™
Reverse recovery time: 420ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Technology: Linear L2™
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH16N50D2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXKH47N60C |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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| IXXH80N65B4 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 125ns
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 125ns
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
auf Bestellung 263 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.65 EUR |
| 10+ | 7.86 EUR |
| 30+ | 6.08 EUR |
| 120+ | 5.81 EUR |
| IXFH110N10P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Case: TO247-3
Kind of package: tube
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 110nC
On-state resistance: 15mΩ
Drain current: 110A
Drain-source voltage: 100V
Power dissipation: 480W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Case: TO247-3
Kind of package: tube
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 110nC
On-state resistance: 15mΩ
Drain current: 110A
Drain-source voltage: 100V
Power dissipation: 480W
Kind of channel: enhancement
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.67 EUR |
| 10+ | 7.44 EUR |
| 11+ | 6.76 EUR |
| 20+ | 6.06 EUR |
| 30+ | 5.65 EUR |
| 120+ | 5.62 EUR |
| CPC1726Y |
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Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; OptoMOS; 0.75Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1A
Switched voltage: max. 250V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.75Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; OptoMOS; 0.75Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1A
Switched voltage: max. 250V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.75Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.19 EUR |
| CLA100E1200KB |
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Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Max. off-state voltage: 1.2kV
Load current: 100A
Case: TO264
Mounting: THT
Max. load current: 160A
Max. forward impulse current: 1.19kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Max. off-state voltage: 1.2kV
Load current: 100A
Case: TO264
Mounting: THT
Max. load current: 160A
Max. forward impulse current: 1.19kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.04 EUR |
| 10+ | 7.78 EUR |
| 25+ | 7.62 EUR |
| IXFK150N30P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 197nC
On-state resistance: 19mΩ
Drain current: 150A
Drain-source voltage: 300V
Mounting: THT
Power dissipation: 1.3kW
Kind of package: tube
Case: TO264
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 197nC
On-state resistance: 19mΩ
Drain current: 150A
Drain-source voltage: 300V
Mounting: THT
Power dissipation: 1.3kW
Kind of package: tube
Case: TO264
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 22.35 EUR |
| 10+ | 19.56 EUR |
| IXTP120P065T |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.34 EUR |
| 50+ | 5.68 EUR |








































