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IXTN110N20L2 IXTN110N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8D4C2C0D3B820&compId=IXTN110N20L2.pdf?ci_sign=22d1ef7a7256a11bcc8df888639ad4005a52d7b3 Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Technology: Linear L2™
Reverse recovery time: 420ns
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXTK110N20L2 IXTK110N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9939600E0EFF298BF&compId=IXT_110N20L2.pdf?ci_sign=2efcd7c71b9a3d0ca4fa8423b4cac407d61b052b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
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OMA160 OMA160 IXYS OMA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 125µs
Turn-off time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.19 EUR
17+4.25 EUR
25+3.69 EUR
Mindestbestellmenge: 14
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CPC1706Y CPC1706Y IXYS CPC1706.pdf Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Max. operating current: 4A
Switched voltage: max. 60V DC
Mounting: THT
Case: SOP4
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 21.08x10.16x3.3mm
Turn-on time: 5ms
Turn-off time: 2ms
Contacts configuration: SPST-NO
On-state resistance: 90mΩ
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
auf Bestellung 449 Stücke:
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20+3.73 EUR
24+3.1 EUR
25+2.89 EUR
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VHFD37-16IO1 VHFD37-16IO1 IXYS VHFD37-ser.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
auf Bestellung 15 Stücke:
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2+42.04 EUR
10+39.04 EUR
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PLA191S PLA191S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 199 Stücke:
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13+5.73 EUR
100+4.38 EUR
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IXXH100N60B3 IXXH100N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB4A5F5037D820&compId=IXXH100N60B3.pdf?ci_sign=0b1678af7c3157780613381fd45916184563f06e Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
Produkt ist nicht verfügbar
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IXDN609SI IXDN609SI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 1340 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.17 EUR
32+2.3 EUR
33+2.19 EUR
50+2.1 EUR
100+2.04 EUR
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IXDN609SIA IXDN609SIA IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 367 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.92 EUR
52+1.4 EUR
55+1.32 EUR
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LF2136BTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F27090BC18C0CE&compId=LF2136BTR.pdf?ci_sign=7d4488ec65212ff10c76d0a7eb8b2083d5f4913f Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Case: SO28
Type of integrated circuit: driver
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IXTA50N20P IXTA50N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Produkt ist nicht verfügbar
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IXFA34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa34n65x3-datasheet?assetguid=7bd01bfc-f3d8-4755-8e6c-5e250cb5176f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXFH34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet?assetguid=965e45cd-8715-4cf1-b85d-adaafdfc5ec2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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CPC2907B CPC2907B IXYS CPC2907B.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Case: PowerSO8
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
On-state resistance: 0.15Ω
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.47 EUR
Mindestbestellmenge: 7
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IXFR44N80P IXFR44N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC577820&compId=IXFR44N80P.pdf?ci_sign=51db11391181a2835bbd75c1ae0c474b83eb49a1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXDN614PI IXDN614PI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.58 EUR
25+2.95 EUR
50+2.29 EUR
Mindestbestellmenge: 16
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CPC1981Y CPC1981Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B4C0C7&compId=CPC1981.pdf?ci_sign=49fda13fe6a6bae85cf657bec9b4905da8f5b07d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 180mA
Switched voltage: max. 1kV AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 18Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 10ms
Turn-off time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.58 EUR
14+5.11 EUR
Mindestbestellmenge: 13
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DSA15IM200UC DSA15IM200UC IXYS DSA15IM200UC.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
auf Bestellung 1739 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.82 EUR
52+1.39 EUR
59+1.23 EUR
100+1.12 EUR
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IXDN602PI IXDN602PI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 1000 Stücke:
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54+1.33 EUR
69+1.04 EUR
74+0.97 EUR
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IXDN602SIA IXDN602SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 569 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
72+1 EUR
77+0.93 EUR
Mindestbestellmenge: 50
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CPC1965G CPC1965G IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A44BA23226F8BF&compId=CPC1965G.pdf?ci_sign=3a2396cdfa67a4109f17be1dd9e9ffa31f3979f0 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x7.62x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP4
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.95 EUR
Mindestbestellmenge: 9
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MEK300-06DA MEK300-06DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A5A417959964C0E2&compId=MEx300-06DA.pdf?ci_sign=0556e9583efd8b38c39b9e2bb9f3f3b9775ec323 Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Type of semiconductor module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 0.6kV
Load current: 304A
Case: Y4-M6
Max. forward voltage: 1.19V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
1+84.94 EUR
2+83.66 EUR
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MCD162-18io1 MCD162-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01F68DDF93E27&compId=MCD162-18IO1-DTE.pdf?ci_sign=455e3bcba99267b8d353287e50d54a847388ebe6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. off-state voltage: 1.8kV
Load current: 181A
Max. forward impulse current: 6kA
Case: Y4-M6
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.03V
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. load current: 300A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
1+79.69 EUR
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PD2401 PD2401 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98480C7&compId=PD2401.pdf?ci_sign=a60ef1f1aa10789c66a0d571757966686af45183 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP4
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.22 EUR
25+6.91 EUR
Mindestbestellmenge: 10
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IXTP50N20P IXTP50N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.89 EUR
18+4.02 EUR
50+3.55 EUR
100+3.35 EUR
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IXTQ50N20P IXTQ50N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.82 EUR
16+4.76 EUR
30+4.26 EUR
120+3.66 EUR
Mindestbestellmenge: 13
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IXTP50N20PM IXTP50N20PM IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF907F47B5969E27&compId=IXTP50N20PM-DTE.pdf?ci_sign=3960f7e3d34464ae58cc23f154da7e0b579f8434 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: Polar™
Produkt ist nicht verfügbar
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IXTX110N20L2 IXTX110N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9939600E0EFF298BF&compId=IXT_110N20L2.pdf?ci_sign=2efcd7c71b9a3d0ca4fa8423b4cac407d61b052b Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Technology: Linear L2™
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
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IXTH16N50D2 IXTH16N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
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IXKH47N60C IXKH47N60C IXYS IXKH47N60C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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IXXH80N65B4 IXXH80N65B4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9E035A3E93820&compId=IXXH80N65B4.pdf?ci_sign=87dde9e4c61408c192916628afc8e7dc723e51a1 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 125ns
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
auf Bestellung 263 Stücke:
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CPC1726Y CPC1726Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931BC75C80C7&compId=CPC1726.pdf?ci_sign=a53eb8bf498480b7b73e068027bb14401528e7ca Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; OptoMOS; 0.75Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1A
Switched voltage: max. 250V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.75Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
auf Bestellung 68 Stücke:
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CLA100E1200KB CLA100E1200KB IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3BE18465FA0D2&compId=CLA100E1200KB.pdf?ci_sign=8a6a9c1a38dc741ed9180f9f3b065cc6992c0b39 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Max. off-state voltage: 1.2kV
Load current: 100A
Case: TO264
Mounting: THT
Max. load current: 160A
Max. forward impulse current: 1.19kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
auf Bestellung 44 Stücke:
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8+9.04 EUR
10+7.78 EUR
25+7.62 EUR
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IXFK150N30P3 IXFK150N30P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D336DC7D7F5820&compId=IXFK(X)150N30P3.pdf?ci_sign=e1cc3cf21ad8db90ded334fd7d3c224869e18e9c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 197nC
On-state resistance: 19mΩ
Drain current: 150A
Drain-source voltage: 300V
Mounting: THT
Power dissipation: 1.3kW
Kind of package: tube
Case: TO264
auf Bestellung 100 Stücke:
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4+22.35 EUR
10+19.56 EUR
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IXTP120P065T IXTP120P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
auf Bestellung 262 Stücke:
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50+5.68 EUR
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MCMA140PD1600TB MCMA140PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B7921B0CE0C4&compId=MCMA140PD1600TB.pdf?ci_sign=c6eeb5142d57bdd4750d35a87b20279a22ab7570 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Max. off-state voltage: 1.6kV
Load current: 140A
Max. forward impulse current: 2.4kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.28V
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. load current: 220A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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IXTP10P50P IXTP10P50P IXYS IXT_10P50P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: PolarP™
Gate charge: 50nC
Reverse recovery time: 414ns
auf Bestellung 182 Stücke:
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14+5.38 EUR
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IXTH90P10P IXTH90P10P IXYS IXT_90P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Kind of package: tube
Drain-source voltage: -100V
Drain current: -90A
Reverse recovery time: 144ns
Gate charge: 0.12µC
On-state resistance: 25mΩ
Power dissipation: 462W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: TO247-3
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
auf Bestellung 144 Stücke:
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10+9.4 EUR
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IXTP8N65X2 IXTP8N65X2 IXYS IXT_8N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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IXFP16N50P IXFP16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 286 Stücke:
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IXTP16N50P IXTP16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
auf Bestellung 230 Stücke:
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IXFA16N50P3 IXFA16N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
auf Bestellung 31 Stücke:
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21+3.45 EUR
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IXTT16N50D2 IXTT16N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
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IXTQ16N50P IXTQ16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
Produkt ist nicht verfügbar
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IXFH16N50P IXFH16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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IXFA16N50P IXFA16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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IXFH16N50P3 IXFH16N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
Produkt ist nicht verfügbar
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IXTA16N50P IXTA16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXDN630MYI IXDN630MYI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: non-inverting
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IXTQ22N50P IXTQ22N50P IXYS IXTH(Q,V)22N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
auf Bestellung 48 Stücke:
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14+5.49 EUR
30+5.05 EUR
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IXFH22N50P IXFH22N50P IXYS IXFH22N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 103 Stücke:
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IXTH22N50P IXTH22N50P IXYS IXTH(Q,V)22N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
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LCA110 LCA110 IXYS LCA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
auf Bestellung 663 Stücke:
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30+2.42 EUR
40+1.82 EUR
50+1.77 EUR
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CPC1125NTR CPC1125NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20B60C7&compId=CPC1125N.pdf?ci_sign=37beec7290e33484c75fff726185ce9ab1651de2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXTH120P065T IXTH120P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO247-3
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.27 EUR
10+7.48 EUR
30+6.55 EUR
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IXFT140N20X3HV IXFT140N20X3HV IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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LAA100P LAA100P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 6 Stücke:
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6+11.91 EUR
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IXGH12N120A3 IXGH12N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB6BEF0478F820&compId=IXGA(p%2Ch)12N120A3.pdf?ci_sign=7ff57f903aa71d4892f3c9c90fda1c4b6514c180 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3
Collector current: 12A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Kind of package: tube
Gate charge: 20.4nC
Turn-on time: 202ns
Turn-off time: 1545ns
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
Produkt ist nicht verfügbar
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CLA50E1200TC-TUB CLA50E1200TC-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF06C1A1D9BB8BF&compId=CLA50E1200TC.pdf?ci_sign=b629e30eda934e1f86d73525caad02b28cb70d3d Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Max. off-state voltage: 1.2kV
Load current: 50A
Case: D3PAK
Mounting: SMD
Max. load current: 79A
Max. forward impulse current: 555A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.72 EUR
10+8.35 EUR
30+7.34 EUR
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CLA50E1200TC-TRL IXYS Littelfuse-Power-Semiconductors-CLA50E1200TC-Datasheet?assetguid=0a7ad2bc-21e4-400c-913e-65dfcb8907e4 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
Produkt ist nicht verfügbar
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IXTN110N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8D4C2C0D3B820&compId=IXTN110N20L2.pdf?ci_sign=22d1ef7a7256a11bcc8df888639ad4005a52d7b3
IXTN110N20L2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Technology: Linear L2™
Reverse recovery time: 420ns
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXTK110N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE9939600E0EFF298BF&compId=IXT_110N20L2.pdf?ci_sign=2efcd7c71b9a3d0ca4fa8423b4cac407d61b052b
IXTK110N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
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OMA160 OMA160.pdf
OMA160
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 125µs
Turn-off time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.19 EUR
17+4.25 EUR
25+3.69 EUR
Mindestbestellmenge: 14
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CPC1706Y CPC1706.pdf
CPC1706Y
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Max. operating current: 4A
Switched voltage: max. 60V DC
Mounting: THT
Case: SOP4
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 21.08x10.16x3.3mm
Turn-on time: 5ms
Turn-off time: 2ms
Contacts configuration: SPST-NO
On-state resistance: 90mΩ
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
auf Bestellung 449 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.73 EUR
24+3.1 EUR
25+2.89 EUR
Mindestbestellmenge: 20
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VHFD37-16IO1 VHFD37-ser.pdf
VHFD37-16IO1
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.04 EUR
10+39.04 EUR
Mindestbestellmenge: 2
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PLA191S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b
PLA191S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.73 EUR
100+4.38 EUR
Mindestbestellmenge: 13
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IXXH100N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB4A5F5037D820&compId=IXXH100N60B3.pdf?ci_sign=0b1678af7c3157780613381fd45916184563f06e
IXXH100N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
Produkt ist nicht verfügbar
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IXDN609SI IXDD609CI.pdf
IXDN609SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 1340 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.17 EUR
32+2.3 EUR
33+2.19 EUR
50+2.1 EUR
100+2.04 EUR
Mindestbestellmenge: 23
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IXDN609SIA IXDD609CI.pdf
IXDN609SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 367 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.92 EUR
52+1.4 EUR
55+1.32 EUR
Mindestbestellmenge: 38
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LF2136BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F27090BC18C0CE&compId=LF2136BTR.pdf?ci_sign=7d4488ec65212ff10c76d0a7eb8b2083d5f4913f
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Case: SO28
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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IXTA50N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34
IXTA50N20P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Produkt ist nicht verfügbar
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IXFA34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa34n65x3-datasheet?assetguid=7bd01bfc-f3d8-4755-8e6c-5e250cb5176f
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXFH34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet?assetguid=965e45cd-8715-4cf1-b85d-adaafdfc5ec2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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CPC2907B CPC2907B.pdf
CPC2907B
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Case: PowerSO8
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
On-state resistance: 0.15Ω
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.47 EUR
Mindestbestellmenge: 7
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IXFR44N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC577820&compId=IXFR44N80P.pdf?ci_sign=51db11391181a2835bbd75c1ae0c474b83eb49a1
IXFR44N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXDN614PI IXDD614CI-DTE.pdf
IXDN614PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.58 EUR
25+2.95 EUR
50+2.29 EUR
Mindestbestellmenge: 16
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CPC1981Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B4C0C7&compId=CPC1981.pdf?ci_sign=49fda13fe6a6bae85cf657bec9b4905da8f5b07d
CPC1981Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 180mA
Switched voltage: max. 1kV AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 18Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 10ms
Turn-off time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.58 EUR
14+5.11 EUR
Mindestbestellmenge: 13
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DSA15IM200UC DSA15IM200UC.pdf
DSA15IM200UC
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
auf Bestellung 1739 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.82 EUR
52+1.39 EUR
59+1.23 EUR
100+1.12 EUR
Mindestbestellmenge: 40
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IXDN602PI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDN602PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
69+1.04 EUR
74+0.97 EUR
Mindestbestellmenge: 54
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IXDN602SIA pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDN602SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 569 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
72+1 EUR
77+0.93 EUR
Mindestbestellmenge: 50
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CPC1965G pVersion=0046&contRep=ZT&docId=005056AB82531EE995A44BA23226F8BF&compId=CPC1965G.pdf?ci_sign=3a2396cdfa67a4109f17be1dd9e9ffa31f3979f0
CPC1965G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x7.62x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP4
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
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MEK300-06DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A5A417959964C0E2&compId=MEx300-06DA.pdf?ci_sign=0556e9583efd8b38c39b9e2bb9f3f3b9775ec323
MEK300-06DA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Type of semiconductor module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 0.6kV
Load current: 304A
Case: Y4-M6
Max. forward voltage: 1.19V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+84.94 EUR
2+83.66 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MCD162-18io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01F68DDF93E27&compId=MCD162-18IO1-DTE.pdf?ci_sign=455e3bcba99267b8d353287e50d54a847388ebe6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCD162-18io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. off-state voltage: 1.8kV
Load current: 181A
Max. forward impulse current: 6kA
Case: Y4-M6
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.03V
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. load current: 300A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+79.69 EUR
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PD2401 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98480C7&compId=PD2401.pdf?ci_sign=a60ef1f1aa10789c66a0d571757966686af45183
PD2401
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP4
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.22 EUR
25+6.91 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXTP50N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34
IXTP50N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.89 EUR
18+4.02 EUR
50+3.55 EUR
100+3.35 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ50N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9077F895E69E27&compId=IXTA50N20P-DTE.pdf?ci_sign=612057febd20f9989f5be1c49cefc90efaebcd34
IXTQ50N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.82 EUR
16+4.76 EUR
30+4.26 EUR
120+3.66 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXTP50N20PM pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF907F47B5969E27&compId=IXTP50N20PM-DTE.pdf?ci_sign=3960f7e3d34464ae58cc23f154da7e0b579f8434
IXTP50N20PM
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTX110N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE9939600E0EFF298BF&compId=IXT_110N20L2.pdf?ci_sign=2efcd7c71b9a3d0ca4fa8423b4cac407d61b052b
IXTX110N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Technology: Linear L2™
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH16N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005
IXTH16N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXKH47N60C IXKH47N60C.pdf
IXKH47N60C
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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IXXH80N65B4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9E035A3E93820&compId=IXXH80N65B4.pdf?ci_sign=87dde9e4c61408c192916628afc8e7dc723e51a1
IXXH80N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 125ns
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
auf Bestellung 263 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.65 EUR
10+7.86 EUR
30+6.08 EUR
120+5.81 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
CPC1726Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931BC75C80C7&compId=CPC1726.pdf?ci_sign=a53eb8bf498480b7b73e068027bb14401528e7ca
CPC1726Y
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; OptoMOS; 0.75Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1A
Switched voltage: max. 250V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.75Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.19 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
CLA100E1200KB pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3BE18465FA0D2&compId=CLA100E1200KB.pdf?ci_sign=8a6a9c1a38dc741ed9180f9f3b065cc6992c0b39
CLA100E1200KB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Max. off-state voltage: 1.2kV
Load current: 100A
Case: TO264
Mounting: THT
Max. load current: 160A
Max. forward impulse current: 1.19kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.04 EUR
10+7.78 EUR
25+7.62 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXFK150N30P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D336DC7D7F5820&compId=IXFK(X)150N30P3.pdf?ci_sign=e1cc3cf21ad8db90ded334fd7d3c224869e18e9c
IXFK150N30P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 197nC
On-state resistance: 19mΩ
Drain current: 150A
Drain-source voltage: 300V
Mounting: THT
Power dissipation: 1.3kW
Kind of package: tube
Case: TO264
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+22.35 EUR
10+19.56 EUR
Mindestbestellmenge: 4
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IXTP120P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7
IXTP120P065T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.34 EUR
50+5.68 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
MCMA140PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B7921B0CE0C4&compId=MCMA140PD1600TB.pdf?ci_sign=c6eeb5142d57bdd4750d35a87b20279a22ab7570 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCMA140PD1600TB
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Max. off-state voltage: 1.6kV
Load current: 140A
Max. forward impulse current: 2.4kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.28V
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. load current: 220A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+44.93 EUR
6+41.27 EUR
Mindestbestellmenge: 2
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IXTP10P50P IXT_10P50P.pdf
IXTP10P50P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: PolarP™
Gate charge: 50nC
Reverse recovery time: 414ns
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.09 EUR
13+5.93 EUR
14+5.38 EUR
50+4.83 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXTH90P10P IXT_90P10P.pdf
IXTH90P10P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Kind of package: tube
Drain-source voltage: -100V
Drain current: -90A
Reverse recovery time: 144ns
Gate charge: 0.12µC
On-state resistance: 25mΩ
Power dissipation: 462W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: TO247-3
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.1 EUR
7+10.65 EUR
10+9.4 EUR
30+8.75 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXTP8N65X2 IXT_8N65X2.pdf
IXTP8N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
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IXFP16N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7
IXFP16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.13 EUR
18+4.15 EUR
50+3.27 EUR
100+3.26 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IXTP16N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1
IXTP16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.11 EUR
23+3.22 EUR
50+3.1 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IXFA16N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da
IXFA16N50P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.45 EUR
24+3.1 EUR
27+2.73 EUR
Mindestbestellmenge: 21
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IXTT16N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005
IXTT16N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
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IXTQ16N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1
IXTQ16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH16N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7
IXFH16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA16N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7
IXFA16N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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IXFH16N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da
IXFH16N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
Produkt ist nicht verfügbar
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IXTA16N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1
IXTA16N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXDN630MYI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDN630MYI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: non-inverting
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.38 EUR
10+8.35 EUR
Mindestbestellmenge: 8
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IXTQ22N50P IXTH(Q,V)22N50P_S.pdf
IXTQ22N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.62 EUR
14+5.49 EUR
30+5.05 EUR
Mindestbestellmenge: 11
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IXFH22N50P IXFH22N50P.pdf
IXFH22N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.86 EUR
14+5.42 EUR
30+5.02 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXTH22N50P IXTH(Q,V)22N50P_S.pdf
IXTH22N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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LCA110 LCA110.pdf
LCA110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
auf Bestellung 663 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.42 EUR
40+1.82 EUR
50+1.77 EUR
Mindestbestellmenge: 30
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CPC1125NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20B60C7&compId=CPC1125N.pdf?ci_sign=37beec7290e33484c75fff726185ce9ab1651de2
CPC1125NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXTH120P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7
IXTH120P065T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO247-3
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.27 EUR
10+7.48 EUR
30+6.55 EUR
Mindestbestellmenge: 8
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IXFT140N20X3HV IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFT140N20X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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LAA100P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58
LAA100P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
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IXGH12N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB6BEF0478F820&compId=IXGA(p%2Ch)12N120A3.pdf?ci_sign=7ff57f903aa71d4892f3c9c90fda1c4b6514c180
IXGH12N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3
Collector current: 12A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Kind of package: tube
Gate charge: 20.4nC
Turn-on time: 202ns
Turn-off time: 1545ns
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
Produkt ist nicht verfügbar
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CLA50E1200TC-TUB pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF06C1A1D9BB8BF&compId=CLA50E1200TC.pdf?ci_sign=b629e30eda934e1f86d73525caad02b28cb70d3d
CLA50E1200TC-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Max. off-state voltage: 1.2kV
Load current: 50A
Case: D3PAK
Mounting: SMD
Max. load current: 79A
Max. forward impulse current: 555A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.72 EUR
10+8.35 EUR
30+7.34 EUR
Mindestbestellmenge: 8
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CLA50E1200TC-TRL Littelfuse-Power-Semiconductors-CLA50E1200TC-Datasheet?assetguid=0a7ad2bc-21e4-400c-913e-65dfcb8907e4
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
Produkt ist nicht verfügbar
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