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DSA120X200LB-TUB DSA120X200LB-TUB IXYS DSA120X200LB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; tube; 185W
Mounting: SMD
Max. forward impulse current: 700A
Max. forward voltage: 0.67V
Power dissipation: 185W
Max. off-state voltage: 200V
Load current: 65A x2
Kind of package: tube
Semiconductor structure: double independent
Case: SMPD
Type of diode: Schottky rectifying
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IXYH20N65C3 IXYH20N65C3 IXYS IXYA(H)20N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Mounting: THT
Pulsed collector current: 105A
Type of transistor: IGBT
Turn-on time: 51ns
Kind of package: tube
Case: TO247-3
Turn-off time: 132ns
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 650V
Power dissipation: 230W
Gate charge: 30nC
Technology: GenX3™; Planar; XPT™
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DSSK60-015A DSSK60-015A IXYS DSSK60-015A_AR.pdf description Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; TO247-3; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.69V
Max. forward impulse current: 0.6kA
Power dissipation: 190W
Kind of package: tube
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IX4428MTR IX4428MTR IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Mounting: SMD
Number of channels: 2
Supply voltage: 4.5...30V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: inverting; non-inverting
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
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MUBW25-06A6K IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A
Collector current: 21A
Power dissipation: 100W
Case: E1-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Technology: NPT
Mechanical mounting: screw
Application: motors
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DSS40-0008D DSS40-0008D IXYS DSS40-0008D.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40A; TO247-3; Ufmax: 0.23V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 0.23V
Max. forward impulse current: 0.6kA
Kind of package: tube
Power dissipation: 155W
Case: TO247-3
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DSA20C100PN DSA20C100PN IXYS DSA20C100PN.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.71V
Mounting: THT
Max. forward impulse current: 0.24kA
Max. forward voltage: 0.71V
Power dissipation: 35W
Max. off-state voltage: 0.1kV
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220FP
Type of diode: Schottky rectifying
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DSA20C45PB DSA20C45PB IXYS DSA20C45PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220AB; Ufmax: 0.61V
Mounting: THT
Max. forward impulse current: 260A
Max. forward voltage: 0.61V
Power dissipation: 45W
Max. off-state voltage: 45V
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
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MIXA60HU1200VA IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Technology: Sonic FRD™; XPT™
Power dissipation: 290W
Case: V1-A-Pack
Gate-emitter voltage: ±20V
Collector current: 60A
Topology: boost chopper; buck chopper; H-bridge
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors
Semiconductor structure: diode/transistor
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IXTH26N60P IXTH26N60P IXYS IXTH(Q,T,V)26N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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IXFT26N60P IXFT26N60P IXYS IXFH26N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
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IXTQ26N60P IXTQ26N60P IXYS IXTH(Q,T,V)26N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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IXTT26N60P IXTT26N60P IXYS IXTH(Q,T,V)26N60P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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IXTP36P15P IXTP36P15P IXYS IXT_36P15P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB
Reverse recovery time: 228ns
Mounting: THT
Power dissipation: 300W
Gate charge: 55nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -36A
Kind of channel: enhancement
Drain-source voltage: -150V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 0.11Ω
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IXTP36N30P IXTP36N30P IXYS IXTA36N30P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO220AB
Reverse recovery time: 250ns
Mounting: THT
Power dissipation: 300W
Gate charge: 70nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
On-state resistance: 0.11Ω
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IXSA40N120L2-7TR IXYS ixsa40n120l2-7-datasheet?assetguid=91c535e6-431a-48bd-bac5-7f59dc11aae0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 30A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 53nC
Kind of channel: enhancement
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IXSH40N120L2KHV IXYS ixsh40n120l2khv-datasheet?assetguid=ecb921c0-eed4-4667-83f5-046994313c3d Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 40A; 250W; TO247-4; 28.6ns
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 40A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 53nC
Kind of channel: enhancement
Reverse recovery time: 28.6ns
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IXTY4N65X2-TRL IXTY4N65X2-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; 650V; 4A; 80W; DPAK,TO252AA; 160ns
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 4A
Case: DPAK; TO252AA
Gate-source voltage: 30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 160ns
Power dissipation: 80W
Gate charge: 8.3nC
Technology: X2-Class
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IXFH34N65X2W IXYS ixfh34n65x2w-datasheet?assetguid=e83b9dc5-823b-41b2-9833-15806c11776b Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 34A; 540W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 34A
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 0.1Ω
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 180ns
Power dissipation: 540W
Gate charge: 64nC
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IXTN500N20X4 IXYS ixtn500n20x4-datasheet?assetguid=4bd1ad75-1294-42a5-9dc5-05bb88ff6c2a Category: Transistor modules
Description: Module; 200V; 500A; SOT227B; 1.15kW; 250ns; screw
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 200V
Drain current: 500A
Case: SOT227B
On-state resistance: 1.99mΩ
Power dissipation: 1.15kW
Reverse recovery time: 250ns
Mechanical mounting: screw
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DSP25-12A DSP25-12A IXYS DSP25-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 25A; Ifsm: 300A; TO247-3; tube; 160W
Max. off-state voltage: 1.2kV
Load current: 25A
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.16V
Power dissipation: 160W
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MKI50-06A7T IXYS MKI50-06A7_MKI50-06A7T.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 0.6kV
Collector current: 50A
Case: E2-Pack
Application: for UPS; motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 225W
Technology: NPT
Mechanical mounting: screw
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CPC3730CTR CPC3730CTR IXYS CPC3730.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Power dissipation: 1.4W
Polarisation: unipolar
Drain current: 0.14A
Kind of channel: depletion
Drain-source voltage: 350V
Type of transistor: N-MOSFET
Gate-source voltage: ±15V
Kind of package: reel; tape
Case: SOT89
On-state resistance: 35Ω
Mounting: SMD
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DPF10I600APA DPF10I600APA IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; TO220AC; tube
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
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IXTA80N075L2 IXTA80N075L2 IXYS IXTA(H,P)80N075L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
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IXTH80N075L2 IXTH80N075L2 IXYS IXTA(H,P)80N075L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
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IXTP80N075L2 IXTP80N075L2 IXYS IXTA(H,P)80N075L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
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IXTA80N075L2-TRL IXTA80N075L2-TRL IXYS littelfuse-discrete-mosfets-ixt-80n075-datasheet?assetguid=09b664e9-c301-4232-b44a-1bb876c4d880 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 75V; 80A; Idm: 80A; 357W; D2PAK,TO263; 160ns
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: D2PAK; TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of channel: enhancement
Reverse recovery time: 160ns
Pulsed drain current: 80A
Gate-source voltage: 20V
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IXTA110N055T2-TRL IXTA110N055T2-TRL IXYS littelfuse-discrete-mosfets-ixt-110n055t2-datasheet?assetguid=21c020da-ce9b-49ec-a4f7-c30b99262b3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 110A; 180W; D2PAK,TO263; 38ns
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: D2PAK; TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of channel: enhancement
Reverse recovery time: 38ns
Application: automotive industry
Gate-source voltage: 20V
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IXTP260N055T2 IXTP260N055T2 IXYS IXTA(P)260N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
Mounting: THT
Power dissipation: 480W
Gate charge: 0.14µC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 260A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 3.3mΩ
Reverse recovery time: 60ns
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IXTK32P60P IXTK32P60P IXYS IXTK32P60P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264
Mounting: THT
Power dissipation: 890W
Gate charge: 196nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -32A
Kind of channel: enhancement
Drain-source voltage: -600V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 0.35Ω
Reverse recovery time: 480ns
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IXTT16P60P IXTT16P60P IXYS IXT_16P60P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO268
Mounting: SMD
Power dissipation: 460W
Gate charge: 92nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -16A
Kind of channel: enhancement
Drain-source voltage: -600V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 720mΩ
Reverse recovery time: 440ns
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PLB150 PLB150 IXYS PLB150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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PLB150STR IXYS PLB150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC2125N CPC2125N IXYS CPC2125N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC x2
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 400V AC; max. 400V DC
Case: SO8
Max. operating current: 0.1A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
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CPC2125NTR IXYS CPC2125N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC x2
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 400V AC; max. 400V DC
Case: SO8
Max. operating current: 0.1A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
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MDD142-14N1MDD142-14N1
MDD142-14N1MDD142-14N1
 MDD142-14N1 IXYS MDD142-14N1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Case: Y4-M6
Kind of package: bulk
Max. forward impulse current: 4.7kA
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 165A
Max. load current: 300A
Semiconductor structure: double series
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IXXN100N60B3H1 IXXN100N60B3H1 IXYS IXXN100N60B3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W
Technology: GenX3™; XPT™
Power dissipation: 500W
Case: SOT227B
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 440A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
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IXFK120N30T IXFK120N30T IXYS IXFK(X)120N30T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264
Power dissipation: 960W
Gate charge: 265nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
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MUBW50-12A8 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Technology: NPT
Mechanical mounting: screw
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IXSG40N65L2K IXYS power-semiconductor-sic-mosfet-ixsg40n65l2k-datasheet?assetguid=15bde63b-8e75-40b2-8290-b484f25a2b34 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 40A; 174W; TOLL
Type of transistor: N-MOSFET
Power dissipation: 174W
Case: TOLL
Mounting: SMD
Gate charge: 64nC
On-state resistance: 60Ω
Polarisation: N
Technology: SiC
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: -5...20V
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IXTQ22N50P IXTQ22N50P IXYS IXTH(Q,V)22N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
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10+9 EUR
11+7.75 EUR
13+7 EUR
30+5.89 EUR
60+5.31 EUR
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IXTH22N50P IXTH22N50P IXYS IXTH(Q,V)22N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
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IXTQ60N20L2 IXTQ60N20L2 IXYS IXTH(T,Q)60N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO3P
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of channel: enhancement
Reverse recovery time: 330ns
Features of semiconductor devices: linear power mosfet
Kind of package: tube
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IXTA60N20T IXTA60N20T IXYS IXTA(P,Q)60N20T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO263; 118ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 500W
Case: TO263
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 73nC
Kind of channel: enhancement
Reverse recovery time: 118ns
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
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IXTA60N20T-TRL IXTA60N20T-TRL IXYS littelfuse-discrete-mosfets-ixt-60n20t-datasheet?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 200V; 60A; 500W; D2PAK,TO263; 118ns
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 500W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 73nC
Kind of channel: enhancement
Reverse recovery time: 118ns
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IXTA60N20X4 IXTA60N20X4 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixta60n20x4-datasheet?assetguid=2b3218dd-12ed-427b-9078-1e7ab94ad93a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X4-Class; N; 200V; 60A; 250W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: X4-Class
Polarisation: N
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhancement
Reverse recovery time: 110ns
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IXTH60N20X4 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixth60n20x4-datasheet?assetguid=6d5361e1-8da4-4f6c-9b68-d39e4489d126 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X4-Class; N; 200V; 60A; 250W; TO247-3; 110ns
Type of transistor: N-MOSFET
Technology: X4-Class
Polarisation: N
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 33nC
Kind of channel: enhancement
Reverse recovery time: 110ns
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IXTP60N20X4 IXTP60N20X4 IXYS IXTP60N20X4_DS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X4-Class; N; 200V; 60A; 250W; TO220-3; 110ns
Type of transistor: N-MOSFET
Technology: X4-Class
Polarisation: N
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 33nC
Kind of channel: enhancement
Reverse recovery time: 110ns
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IXTT60N20L2 IXTT60N20L2 IXYS IXTH(T,Q)60N20L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO268; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 255nC
Kind of channel: enhancement
Reverse recovery time: 330ns
Features of semiconductor devices: linear power mosfet
Kind of package: tube
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IXFA16N50P-TRL IXFA16N50P-TRL IXYS littelfuse-discrete-mosfets-ixf-16n50p-datasheet?assetguid=bb00d7c9-0646-4c67-89ce-480fb9520851 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 16A; 300W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Technology: HiPerFET™
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IXTA16N50P-TRL IXTA16N50P-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 16A; 300W; D2PAK,TO263; 400ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of channel: enhancement
Reverse recovery time: 400ns
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MCC26-16io1B MCC26-16io1B IXYS MCC26-16io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.27V
Max. forward impulse current: 520A
Gate current: 100/200mA
Max. forward voltage: 1.27V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 27A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
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MDD26-16N1B MDD26-16N1B IXYS MDD26-16N1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 36A; TO240AA; Ufmax: 1.05V
Max. forward impulse current: 555A
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 36A
Max. load current: 60A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
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MCD26-16io8B MCD26-16io8B IXYS MCD26-16io8B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. forward impulse current: 520A
Gate current: 100/200mA
Max. forward voltage: 1.27V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 27A
Max. load current: 42A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
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MCC26-16io8B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V
Gate current: 100/200mA
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 27A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
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IXFH46N65X2W IXYS ixfh64n65x2w-datasheet?assetguid=8f26fe38-2800-4147-8599-7c18fc4773c8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 46A; 650W; TO247-3; 210ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 650W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 90nC
Kind of channel: enhancement
Reverse recovery time: 210ns
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IXTA4N150HV-TRL IXTA4N150HV-TRL IXYS littelfuse-discrete-mosfets-ixta4n150hv-datasheet?assetguid=ba849f96-97bf-4690-9a95-fae4b36fe859 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1.5kV; 4A; 280W; D2PAK,TO263AB; 900ns
Type of transistor: N-MOSFET
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: D2PAK; TO263AB
Gate-source voltage: 30V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of channel: enhancement
Reverse recovery time: 900ns
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IXTT4N150HV-TRL IXYS littelfuse-discrete-mosfets-ixta4n150hv-datasheet?assetguid=ba849f96-97bf-4690-9a95-fae4b36fe859 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1.5kV; 4A; 280W; D3PAK,TO268; 900ns
Type of transistor: N-MOSFET
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: D3PAK; TO268
Gate-source voltage: 30V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of channel: enhancement
Reverse recovery time: 900ns
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FDM47-06KC5FDM47-06KC5
FDM47-06KC5FDM47-06KC5
 FDM47-06KC5 IXYS FDM47-06KC5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Gate charge: 150nC
Polarisation: unipolar
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Features of semiconductor devices: super junction coolmos
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Semiconductor structure: diode/transistor
Case: ISOPLUS i4-pac™ x024a
On-state resistance: 45mΩ
Topology: buck chopper
Mounting: THT
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7+12.67 EUR
10+12.08 EUR
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DSA120X200LB-TUB DSA120X200LB.pdf
DSA120X200LB-TUB
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; tube; 185W
Mounting: SMD
Max. forward impulse current: 700A
Max. forward voltage: 0.67V
Power dissipation: 185W
Max. off-state voltage: 200V
Load current: 65A x2
Kind of package: tube
Semiconductor structure: double independent
Case: SMPD
Type of diode: Schottky rectifying
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IXYH20N65C3 IXYA(H)20N65C3.pdf
IXYH20N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Mounting: THT
Pulsed collector current: 105A
Type of transistor: IGBT
Turn-on time: 51ns
Kind of package: tube
Case: TO247-3
Turn-off time: 132ns
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 650V
Power dissipation: 230W
Gate charge: 30nC
Technology: GenX3™; Planar; XPT™
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DSSK60-015A description DSSK60-015A_AR.pdf
DSSK60-015A
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; TO247-3; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.69V
Max. forward impulse current: 0.6kA
Power dissipation: 190W
Kind of package: tube
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9+9.81 EUR
10+8.82 EUR
11+7.79 EUR
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IX4428MTR IX4426-27-28.pdf
IX4428MTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Mounting: SMD
Number of channels: 2
Supply voltage: 4.5...30V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: inverting; non-inverting
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
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AnzahlPrivatkunde
5+17.02 EUR
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MUBW25-06A6K
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A
Collector current: 21A
Power dissipation: 100W
Case: E1-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Technology: NPT
Mechanical mounting: screw
Application: motors
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DSS40-0008D DSS40-0008D.pdf
DSS40-0008D
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40A; TO247-3; Ufmax: 0.23V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 0.23V
Max. forward impulse current: 0.6kA
Kind of package: tube
Power dissipation: 155W
Case: TO247-3
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DSA20C100PN DSA20C100PN.pdf
DSA20C100PN
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.71V
Mounting: THT
Max. forward impulse current: 0.24kA
Max. forward voltage: 0.71V
Power dissipation: 35W
Max. off-state voltage: 0.1kV
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220FP
Type of diode: Schottky rectifying
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AnzahlPrivatkunde
35+2.43 EUR
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DSA20C45PB DSA20C45PB.pdf
DSA20C45PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220AB; Ufmax: 0.61V
Mounting: THT
Max. forward impulse current: 260A
Max. forward voltage: 0.61V
Power dissipation: 45W
Max. off-state voltage: 45V
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
auf Bestellung 312 Stücke:
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152+0.56 EUR
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MIXA60HU1200VA
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Technology: Sonic FRD™; XPT™
Power dissipation: 290W
Case: V1-A-Pack
Gate-emitter voltage: ±20V
Collector current: 60A
Topology: boost chopper; buck chopper; H-bridge
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
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IXTH26N60P IXTH(Q,T,V)26N60P_S.pdf
IXTH26N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXFT26N60P IXFH26N60P.pdf
IXFT26N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTQ26N60P IXTH(Q,T,V)26N60P_S.pdf
IXTQ26N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXTT26N60P IXTH(Q,T,V)26N60P_S.pdf
IXTT26N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXTP36P15P IXT_36P15P.pdf
IXTP36P15P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB
Reverse recovery time: 228ns
Mounting: THT
Power dissipation: 300W
Gate charge: 55nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -36A
Kind of channel: enhancement
Drain-source voltage: -150V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 0.11Ω
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
8+10.94 EUR
10+8.66 EUR
12+7.66 EUR
50+6.05 EUR
100+5.75 EUR
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IXTP36N30P IXTA36N30P-DTE.pdf
IXTP36N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO220AB
Reverse recovery time: 250ns
Mounting: THT
Power dissipation: 300W
Gate charge: 70nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
On-state resistance: 0.11Ω
auf Bestellung 194 Stücke:
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13+6.79 EUR
15+5.78 EUR
16+5.43 EUR
17+5.22 EUR
25+4.95 EUR
30+4.87 EUR
50+4.82 EUR
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IXSA40N120L2-7TR ixsa40n120l2-7-datasheet?assetguid=91c535e6-431a-48bd-bac5-7f59dc11aae0
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 30A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 53nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXSH40N120L2KHV ixsh40n120l2khv-datasheet?assetguid=ecb921c0-eed4-4667-83f5-046994313c3d
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 40A; 250W; TO247-4; 28.6ns
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 40A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 53nC
Kind of channel: enhancement
Reverse recovery time: 28.6ns
Produkt ist nicht verfügbar
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IXTY4N65X2-TRL
IXTY4N65X2-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; 650V; 4A; 80W; DPAK,TO252AA; 160ns
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 4A
Case: DPAK; TO252AA
Gate-source voltage: 30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 160ns
Power dissipation: 80W
Gate charge: 8.3nC
Technology: X2-Class
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IXFH34N65X2W ixfh34n65x2w-datasheet?assetguid=e83b9dc5-823b-41b2-9833-15806c11776b
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 34A; 540W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 34A
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 0.1Ω
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 180ns
Power dissipation: 540W
Gate charge: 64nC
Produkt ist nicht verfügbar
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IXTN500N20X4 ixtn500n20x4-datasheet?assetguid=4bd1ad75-1294-42a5-9dc5-05bb88ff6c2a
Hersteller: IXYS
Category: Transistor modules
Description: Module; 200V; 500A; SOT227B; 1.15kW; 250ns; screw
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 200V
Drain current: 500A
Case: SOT227B
On-state resistance: 1.99mΩ
Power dissipation: 1.15kW
Reverse recovery time: 250ns
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DSP25-12A DSP25-12A.pdf
DSP25-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 25A; Ifsm: 300A; TO247-3; tube; 160W
Max. off-state voltage: 1.2kV
Load current: 25A
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.16V
Power dissipation: 160W
Produkt ist nicht verfügbar
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MKI50-06A7T MKI50-06A7_MKI50-06A7T.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 0.6kV
Collector current: 50A
Case: E2-Pack
Application: for UPS; motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 225W
Technology: NPT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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CPC3730CTR CPC3730.pdf
CPC3730CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Power dissipation: 1.4W
Polarisation: unipolar
Drain current: 0.14A
Kind of channel: depletion
Drain-source voltage: 350V
Type of transistor: N-MOSFET
Gate-source voltage: ±15V
Kind of package: reel; tape
Case: SOT89
On-state resistance: 35Ω
Mounting: SMD
auf Bestellung 23 Stücke:
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AnzahlPrivatkunde
23+3.69 EUR
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DPF10I600APA
DPF10I600APA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; TO220AC; tube
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
auf Bestellung 68 Stücke:
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52+1.67 EUR
59+1.46 EUR
65+1.31 EUR
68+1.26 EUR
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IXTA80N075L2 IXTA(H,P)80N075L2.pdf
IXTA80N075L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+17.66 EUR
10+15.57 EUR
25+13.65 EUR
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IXTH80N075L2 IXTA(H,P)80N075L2.pdf
IXTH80N075L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
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IXTP80N075L2 IXTA(H,P)80N075L2.pdf
IXTP80N075L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
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IXTA80N075L2-TRL littelfuse-discrete-mosfets-ixt-80n075-datasheet?assetguid=09b664e9-c301-4232-b44a-1bb876c4d880
IXTA80N075L2-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 75V; 80A; Idm: 80A; 357W; D2PAK,TO263; 160ns
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: D2PAK; TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of channel: enhancement
Reverse recovery time: 160ns
Pulsed drain current: 80A
Gate-source voltage: 20V
Produkt ist nicht verfügbar
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IXTA110N055T2-TRL littelfuse-discrete-mosfets-ixt-110n055t2-datasheet?assetguid=21c020da-ce9b-49ec-a4f7-c30b99262b3a
IXTA110N055T2-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 110A; 180W; D2PAK,TO263; 38ns
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: D2PAK; TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of channel: enhancement
Reverse recovery time: 38ns
Application: automotive industry
Gate-source voltage: 20V
Produkt ist nicht verfügbar
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IXTP260N055T2 IXTA(P)260N055T2.pdf
IXTP260N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
Mounting: THT
Power dissipation: 480W
Gate charge: 0.14µC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 260A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 3.3mΩ
Reverse recovery time: 60ns
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.13 EUR
14+6.14 EUR
50+5.93 EUR
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IXTK32P60P IXTK32P60P.pdf
IXTK32P60P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264
Mounting: THT
Power dissipation: 890W
Gate charge: 196nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -32A
Kind of channel: enhancement
Drain-source voltage: -600V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 0.35Ω
Reverse recovery time: 480ns
auf Bestellung 202 Stücke:
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4+24.89 EUR
10+22.85 EUR
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IXTT16P60P IXT_16P60P.pdf
IXTT16P60P
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO268
Mounting: SMD
Power dissipation: 460W
Gate charge: 92nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -16A
Kind of channel: enhancement
Drain-source voltage: -600V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 720mΩ
Reverse recovery time: 440ns
auf Bestellung 101 Stücke:
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4+22.91 EUR
30+14.14 EUR
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PLB150 PLB150.pdf
PLB150
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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PLB150STR PLB150.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CPC2125N CPC2125N.pdf
CPC2125N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC x2
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 400V AC; max. 400V DC
Case: SO8
Max. operating current: 0.1A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC2125NTR CPC2125N.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC x2
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 400V AC; max. 400V DC
Case: SO8
Max. operating current: 0.1A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
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MDD142-14N1 MDD142-14N1.pdf PCN241015_Y4-M6 screw.pdf
MDD142-14N1MDD142-14N1
MDD142-14N1MDD142-14N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Case: Y4-M6
Kind of package: bulk
Max. forward impulse current: 4.7kA
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 165A
Max. load current: 300A
Semiconductor structure: double series
auf Bestellung 3 Stücke:
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AnzahlPrivatkunde
1+94.94 EUR
3+85.51 EUR
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IXXN100N60B3H1 IXXN100N60B3H1.pdf
IXXN100N60B3H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W
Technology: GenX3™; XPT™
Power dissipation: 500W
Case: SOT227B
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 440A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Produkt ist nicht verfügbar
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IXFK120N30T IXFK(X)120N30T.pdf
IXFK120N30T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264
Power dissipation: 960W
Gate charge: 265nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Produkt ist nicht verfügbar
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MUBW50-12A8
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Technology: NPT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXSG40N65L2K power-semiconductor-sic-mosfet-ixsg40n65l2k-datasheet?assetguid=15bde63b-8e75-40b2-8290-b484f25a2b34
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 40A; 174W; TOLL
Type of transistor: N-MOSFET
Power dissipation: 174W
Case: TOLL
Mounting: SMD
Gate charge: 64nC
On-state resistance: 60Ω
Polarisation: N
Technology: SiC
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: -5...20V
Produkt ist nicht verfügbar
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IXTQ22N50P IXTH(Q,V)22N50P_S.pdf
IXTQ22N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+9 EUR
11+7.75 EUR
13+7 EUR
30+5.89 EUR
60+5.31 EUR
Mindestbestellmenge: 10 Stücke
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IXTH22N50P IXTH(Q,V)22N50P_S.pdf
IXTH22N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXTQ60N20L2 IXTH(T,Q)60N20L2.pdf
IXTQ60N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO3P
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of channel: enhancement
Reverse recovery time: 330ns
Features of semiconductor devices: linear power mosfet
Kind of package: tube
Produkt ist nicht verfügbar
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IXTA60N20T IXTA(P,Q)60N20T.pdf
IXTA60N20T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO263; 118ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 500W
Case: TO263
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 73nC
Kind of channel: enhancement
Reverse recovery time: 118ns
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Produkt ist nicht verfügbar
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IXTA60N20T-TRL littelfuse-discrete-mosfets-ixt-60n20t-datasheet?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1
IXTA60N20T-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 200V; 60A; 500W; D2PAK,TO263; 118ns
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 500W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 73nC
Kind of channel: enhancement
Reverse recovery time: 118ns
Produkt ist nicht verfügbar
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IXTA60N20X4 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixta60n20x4-datasheet?assetguid=2b3218dd-12ed-427b-9078-1e7ab94ad93a
IXTA60N20X4
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X4-Class; N; 200V; 60A; 250W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: X4-Class
Polarisation: N
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhancement
Reverse recovery time: 110ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXTH60N20X4 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixth60n20x4-datasheet?assetguid=6d5361e1-8da4-4f6c-9b68-d39e4489d126
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X4-Class; N; 200V; 60A; 250W; TO247-3; 110ns
Type of transistor: N-MOSFET
Technology: X4-Class
Polarisation: N
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 33nC
Kind of channel: enhancement
Reverse recovery time: 110ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXTP60N20X4 IXTP60N20X4_DS.pdf
IXTP60N20X4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X4-Class; N; 200V; 60A; 250W; TO220-3; 110ns
Type of transistor: N-MOSFET
Technology: X4-Class
Polarisation: N
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 33nC
Kind of channel: enhancement
Reverse recovery time: 110ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXTT60N20L2 IXTH(T,Q)60N20L2.pdf
IXTT60N20L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO268; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 255nC
Kind of channel: enhancement
Reverse recovery time: 330ns
Features of semiconductor devices: linear power mosfet
Kind of package: tube
Produkt ist nicht verfügbar
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IXFA16N50P-TRL littelfuse-discrete-mosfets-ixf-16n50p-datasheet?assetguid=bb00d7c9-0646-4c67-89ce-480fb9520851
IXFA16N50P-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 16A; 300W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Technology: HiPerFET™
Produkt ist nicht verfügbar
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IXTA16N50P-TRL
IXTA16N50P-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 16A; 300W; D2PAK,TO263; 400ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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MCC26-16io1B MCC26-16io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC26-16io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.27V
Max. forward impulse current: 520A
Gate current: 100/200mA
Max. forward voltage: 1.27V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 27A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
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MDD26-16N1B MDD26-16N1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MDD26-16N1B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 36A; TO240AA; Ufmax: 1.05V
Max. forward impulse current: 555A
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 36A
Max. load current: 60A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
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MCD26-16io8B MCD26-16io8B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCD26-16io8B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. forward impulse current: 520A
Gate current: 100/200mA
Max. forward voltage: 1.27V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 27A
Max. load current: 42A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Produkt ist nicht verfügbar
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MCC26-16io8B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V
Gate current: 100/200mA
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 27A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
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IXFH46N65X2W ixfh64n65x2w-datasheet?assetguid=8f26fe38-2800-4147-8599-7c18fc4773c8
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 46A; 650W; TO247-3; 210ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 650W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 90nC
Kind of channel: enhancement
Reverse recovery time: 210ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXTA4N150HV-TRL littelfuse-discrete-mosfets-ixta4n150hv-datasheet?assetguid=ba849f96-97bf-4690-9a95-fae4b36fe859
IXTA4N150HV-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1.5kV; 4A; 280W; D2PAK,TO263AB; 900ns
Type of transistor: N-MOSFET
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: D2PAK; TO263AB
Gate-source voltage: 30V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of channel: enhancement
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IXTT4N150HV-TRL littelfuse-discrete-mosfets-ixta4n150hv-datasheet?assetguid=ba849f96-97bf-4690-9a95-fae4b36fe859
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1.5kV; 4A; 280W; D3PAK,TO268; 900ns
Type of transistor: N-MOSFET
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: D3PAK; TO268
Gate-source voltage: 30V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of channel: enhancement
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
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FDM47-06KC5 FDM47-06KC5.pdf
FDM47-06KC5FDM47-06KC5
FDM47-06KC5FDM47-06KC5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Gate charge: 150nC
Polarisation: unipolar
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Features of semiconductor devices: super junction coolmos
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Semiconductor structure: diode/transistor
Case: ISOPLUS i4-pac™ x024a
On-state resistance: 45mΩ
Topology: buck chopper
Mounting: THT
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+12.67 EUR
10+12.08 EUR
Mindestbestellmenge: 7 Stücke
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