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IXTH80N075L2 IXTH80N075L2 IXYS IXTA(H,P)80N075L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
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9+8.31 EUR
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IXTP80N075L2 IXTP80N075L2 IXYS IXTA(H,P)80N075L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
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IXTA80N075L2 IXTA80N075L2 IXYS IXTA(H,P)80N075L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
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VUO160-12NO7 IXYS VUO160-12NO7.pdf LFPCN250701_PWS-x screw.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.39V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
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VBO160-12NO7 IXYS VBO160-12NO7.pdf LFPCN250701_PWS-x screw.pdf Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 160A; Ifsm: 2.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 160A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
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IXFH20N100P IXFH20N100P IXYS IXF_20N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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IXFT20N100P IXFT20N100P IXYS IXF_20N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO268; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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XBB170P XBB170P IXYS XBB170.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LBB110 LBB110 IXYS LBB110.pdf description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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FUO50-16N FUO50-16N IXYS FUO50-16N.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Electrical mounting: THT
Type of bridge rectifier: three-phase
Load current: 50A
Max. forward voltage: 1.04V
Max. forward impulse current: 270A
Max. off-state voltage: 1.6kV
Case: ISOPLUS i4-pac™ x024a
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IXFN210N20P IXFN210N20P IXYS IXFN210N20P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 188A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10.5mΩ
Pulsed drain current: 600A
Power dissipation: 1.07kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 255nC
Kind of channel: enhancement
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IXFN44N100P IXFN44N100P IXYS IXFN44N100P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 37A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 0.35µC
Kind of channel: enhancement
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MDD142-14N1 IXYS MDD142-14N1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y4-M6
Mechanical mounting: screw
Electrical mounting: screw
Load current: 165A
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Max. off-state voltage: 1.4kV
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MDD142-16N1 MDD142-16N1 IXYS MDD142-16N1-DTE.pdf PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y4-M6
Mechanical mounting: screw
Electrical mounting: screw
Load current: 165A
Max. load current: 300A
Max. forward voltage: 1.05V
Max. forward impulse current: 4kA
Max. off-state voltage: 1.6kV
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MDD142-18N1 IXYS PCN241015_Y4-M6 screw.pdf MDD142-18N1.pdf Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y4-M6
Mechanical mounting: screw
Electrical mounting: screw
Load current: 165A
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Max. off-state voltage: 1.8kV
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MDD142-08N1 IXYS MDD142-08N1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double series; 800V; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y4-M6
Mechanical mounting: screw
Electrical mounting: screw
Load current: 165A
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Max. off-state voltage: 0.8kV
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MDD142-12N1 IXYS MDD142-12N1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y4-M6
Mechanical mounting: screw
Electrical mounting: screw
Load current: 165A
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Max. off-state voltage: 1.2kV
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CLA60PD1200NA CLA60PD1200NA IXYS CLA60PD1200NA.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Gate current: 40/80mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.09V
Load current: 60A
Max. load current: 94A
Max. forward impulse current: 935A
Max. off-state voltage: 1.2kV
Kind of package: bulk
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CLA100PD1200NA CLA100PD1200NA IXYS Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 100A
Case: SOT227B
Max. forward voltage: 1.21V
Max. forward impulse current: 1.5kA
Gate current: 40/80mA
Electrical mounting: screw
Max. load current: 150A
Threshold on-voltage: 0.83V
Kind of package: bulk
Mechanical mounting: screw
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IXFH15N100P IXFH15N100P IXYS IXFH15N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
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IXFA5N100P IXFA5N100P IXYS IXFA(H,P)5N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 5A; 250W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 250W
Case: TO263
Mounting: SMD
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
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IXTP05N100P IXTP05N100P IXYS IXTP05N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.5A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
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IXTP05N100 IXTP05N100 IXYS IXTA(P)05N100_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO220AB
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
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IXTA05N100 IXTA05N100 IXYS IXTA(P)05N100_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
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IXTP05N100M IXTP05N100M IXYS IXTP05N100M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.7A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
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IXFH15N100Q3 IXFH15N100Q3 IXYS IXF_15N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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IXFT15N100Q3 IXFT15N100Q3 IXYS IXF_15N100Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
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LDA100STR LDA100STR IXYS LDA100.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 33-300%@1mA; 50mA
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
Collector-emitter voltage: 30V
Number of channels: 1
CTR@If: 33-300%@1mA
Insulation voltage: 3.75kV
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LDA102 LDA102 IXYS LDA102.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 500mV
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: transistor
Collector-emitter voltage: 500mV
Number of channels: 1
CTR@If: 50-350%@1mA
Insulation voltage: 3.75kV
Case: DIP6
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LDA100 LDA100 IXYS LDA100.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 30V
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: transistor
Collector-emitter voltage: 30V
Number of channels: 1
CTR@If: 33-300%@1mA
Insulation voltage: 3.75kV
Case: DIP6
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IXTT1N450HV IXTT1N450HV IXYS IXTH(T)1N450HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1A
Power dissipation: 520W
Case: TO268HV
On-state resistance: 80Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
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CPC1150NTR CPC1150NTR IXYS CPC1150N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXTN30N100L IXTN30N100L IXYS IXTN30N100L.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.45Ω
Gate charge: 545nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Technology: Linear™
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
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IXTB30N100L IXYS IXTB30N100L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
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IXFA130N10T2 IXFA130N10T2 IXYS IXFA(P)130N10T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXTP130N10T IXTP130N10T IXYS IXTA(P)130N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 67ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTA130N10T IXYS IXTA130N10T.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
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IXTA130N10T-TRL IXYS IXTA130N10T.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
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IXTA130N10T7 IXYS IXTA130N10T7.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
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IXTA340N04T4-7 IXTA340N04T4-7 IXYS IXTA340N04T4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263-7; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Produkt ist nicht verfügbar
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IXTH340N04T4 IXTH340N04T4 IXYS IXTH(P)340N04T4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO247-3; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Produkt ist nicht verfügbar
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IXTA340N04T4 IXTA340N04T4 IXYS IXTA340N04T4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Produkt ist nicht verfügbar
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IXTP340N04T4 IXTP340N04T4 IXYS IXTH(P)340N04T4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO220AB; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Produkt ist nicht verfügbar
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IXTT440N04T4HV IXTT440N04T4HV IXYS IXTT440N04T4HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 440A; 940W; TO268HV; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 440A
Power dissipation: 940W
Case: TO268HV
On-state resistance: 1.25mΩ
Mounting: SMD
Gate charge: 480nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
Produkt ist nicht verfügbar
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IXTQ3N150M IXTQ3N150M IXYS IXTQ3N150M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.83A
Pulsed drain current: 9A
Power dissipation: 73W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 7.3Ω
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
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IXTH3N150 IXTH3N150 IXYS IXTH3N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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DSP8-12A DSP8-12A IXYS DSP8-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Kind of package: tube
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Power dissipation: 100W
auf Bestellung 452 Stücke:
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35+2.09 EUR
50+1.9 EUR
100+1.87 EUR
Mindestbestellmenge: 24
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DSP8-12AS-TRL DSP8-12AS-TRL IXYS DSP8-12AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Kind of package: reel; tape
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
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DSEP8-12A DSEP8-12A IXYS DSEP8-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 40A; TO220AC; 60W; 40ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.96V
Max. forward impulse current: 40A
Power dissipation: 60W
Technology: HiPerFRED™
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DSEC16-12A DSEC16-12A IXYS DSEC16-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Reverse recovery time: 40ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.94V
Max. forward impulse current: 40A
Power dissipation: 60W
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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DSEC16-12AS-TUB IXYS DSEC16-12AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A x2
Reverse recovery time: 40ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.96V
Max. forward impulse current: 40A
Power dissipation: 60W
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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DSP8-12S-TUB IXYS DSP8-12S.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Produkt ist nicht verfügbar
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DSP8-12AS-TUB DSP8-12AS-TUB IXYS DSP8-12AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Produkt ist nicht verfügbar
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IXFQ22N60P3 IXFQ22N60P3 IXYS IXFA(H,P,Q)22N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO3P
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTQ22N60P IXTQ22N60P IXYS IXTQ22N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXFH70N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh70n65x3-datasheet?assetguid=b5819e4b-925f-4a8e-b528-ff8e8c93904b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 110A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 165ns
Produkt ist nicht verfügbar
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IXFN170N65X2 IXFN170N65X2 IXYS IXFN170N65X2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 13mΩ
Gate charge: 434nC
Kind of channel: enhancement
Reverse recovery time: 270ns
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MID145-12A3 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5
Case: Y4-M5
Semiconductor structure: diode/transistor
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 200A
Power dissipation: 700W
Max. off-state voltage: 1.2kV
Topology: boost chopper
Technology: NPT
Produkt ist nicht verfügbar
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IXFH320N10T2 IXFH320N10T2 IXYS IXFH(T)320N10T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
Produkt ist nicht verfügbar
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IXFT320N10T2 IXFT320N10T2 IXYS IXFH(T)320N10T2.pdf IXFT320N10T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
Produkt ist nicht verfügbar
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IXTH80N075L2 IXTA(H,P)80N075L2.pdf
IXTH80N075L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
auf Bestellung 252 Stücke:
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8+9.9 EUR
9+8.31 EUR
10+7.54 EUR
30+7.26 EUR
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IXTP80N075L2 IXTA(H,P)80N075L2.pdf
IXTP80N075L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
auf Bestellung 171 Stücke:
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IXTA80N075L2 IXTA(H,P)80N075L2.pdf
IXTA80N075L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
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5+14.84 EUR
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VUO160-12NO7 VUO160-12NO7.pdf LFPCN250701_PWS-x screw.pdf
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.39V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
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VBO160-12NO7 VBO160-12NO7.pdf LFPCN250701_PWS-x screw.pdf
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 160A; Ifsm: 2.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 160A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFH20N100P IXF_20N100P.pdf
IXFH20N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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IXFT20N100P IXF_20N100P.pdf
IXFT20N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO268; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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XBB170P XBB170.pdf
XBB170P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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8+9.55 EUR
50+6.26 EUR
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LBB110 description LBB110.pdf
LBB110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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Anzahl Preis
11+7.11 EUR
13+5.68 EUR
100+4.93 EUR
Mindestbestellmenge: 11
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FUO50-16N FUO50-16N.pdf
FUO50-16N
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Electrical mounting: THT
Type of bridge rectifier: three-phase
Load current: 50A
Max. forward voltage: 1.04V
Max. forward impulse current: 270A
Max. off-state voltage: 1.6kV
Case: ISOPLUS i4-pac™ x024a
auf Bestellung 169 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.81 EUR
5+21.46 EUR
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IXFN210N20P IXFN210N20P.pdf
IXFN210N20P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 188A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10.5mΩ
Pulsed drain current: 600A
Power dissipation: 1.07kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 255nC
Kind of channel: enhancement
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+46.89 EUR
10+42.99 EUR
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IXFN44N100P IXFN44N100P.pdf
IXFN44N100P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 37A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 0.35µC
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+43.59 EUR
10+42.57 EUR
Mindestbestellmenge: 2
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MDD142-14N1 MDD142-14N1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y4-M6
Mechanical mounting: screw
Electrical mounting: screw
Load current: 165A
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Max. off-state voltage: 1.4kV
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+79.78 EUR
3+71.86 EUR
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MDD142-16N1 MDD142-16N1-DTE.pdf PCN241015_Y4-M6 screw.pdf
MDD142-16N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y4-M6
Mechanical mounting: screw
Electrical mounting: screw
Load current: 165A
Max. load current: 300A
Max. forward voltage: 1.05V
Max. forward impulse current: 4kA
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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MDD142-18N1 PCN241015_Y4-M6 screw.pdf MDD142-18N1.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y4-M6
Mechanical mounting: screw
Electrical mounting: screw
Load current: 165A
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Max. off-state voltage: 1.8kV
Produkt ist nicht verfügbar
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MDD142-08N1 MDD142-08N1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 800V; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y4-M6
Mechanical mounting: screw
Electrical mounting: screw
Load current: 165A
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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MDD142-12N1 MDD142-12N1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y4-M6
Mechanical mounting: screw
Electrical mounting: screw
Load current: 165A
Max. forward voltage: 1.05V
Max. forward impulse current: 4.7kA
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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CLA60PD1200NA CLA60PD1200NA.pdf
CLA60PD1200NA
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Gate current: 40/80mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.09V
Load current: 60A
Max. load current: 94A
Max. forward impulse current: 935A
Max. off-state voltage: 1.2kV
Kind of package: bulk
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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CLA100PD1200NA Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969
CLA100PD1200NA
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 100A
Case: SOT227B
Max. forward voltage: 1.21V
Max. forward impulse current: 1.5kA
Gate current: 40/80mA
Electrical mounting: screw
Max. load current: 150A
Threshold on-voltage: 0.83V
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+45.63 EUR
Mindestbestellmenge: 2
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IXFH15N100P IXFH15N100P.pdf
IXFH15N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.48 EUR
10+11.04 EUR
30+9.91 EUR
Mindestbestellmenge: 6
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IXFA5N100P IXFA(H,P)5N100P.pdf
IXFA5N100P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 5A; 250W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 250W
Case: TO263
Mounting: SMD
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTP05N100P IXTP05N100P.pdf
IXTP05N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.5A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
Produkt ist nicht verfügbar
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IXTP05N100 IXTA(P)05N100_HV.pdf
IXTP05N100
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO220AB
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
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IXTA05N100 IXTA(P)05N100_HV.pdf
IXTA05N100
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
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IXTP05N100M IXTP05N100M.pdf
IXTP05N100M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.7A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
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IXFH15N100Q3 IXF_15N100Q3.pdf
IXFH15N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXFT15N100Q3 IXF_15N100Q3.pdf
IXFT15N100Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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LDA100STR LDA100.pdf
LDA100STR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 33-300%@1mA; 50mA
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
Collector-emitter voltage: 30V
Number of channels: 1
CTR@If: 33-300%@1mA
Insulation voltage: 3.75kV
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
78+0.92 EUR
100+0.79 EUR
400+0.72 EUR
500+0.71 EUR
Mindestbestellmenge: 66
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LDA102 LDA102.pdf
LDA102
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 500mV
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: transistor
Collector-emitter voltage: 500mV
Number of channels: 1
CTR@If: 50-350%@1mA
Insulation voltage: 3.75kV
Case: DIP6
auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
222+0.32 EUR
242+0.3 EUR
Mindestbestellmenge: 125
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LDA100 LDA100.pdf
LDA100
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 30V
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: transistor
Collector-emitter voltage: 30V
Number of channels: 1
CTR@If: 33-300%@1mA
Insulation voltage: 3.75kV
Case: DIP6
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.93 EUR
Mindestbestellmenge: 37
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IXTT1N450HV IXTH(T)1N450HV.pdf
IXTT1N450HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1A
Power dissipation: 520W
Case: TO268HV
On-state resistance: 80Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Produkt ist nicht verfügbar
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CPC1150NTR CPC1150N.pdf
CPC1150NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXTN30N100L IXTN30N100L.pdf
IXTN30N100L
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.45Ω
Gate charge: 545nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Technology: Linear™
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXTB30N100L IXTB30N100L.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXFA130N10T2 IXFA(P)130N10T2.pdf
IXFA130N10T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTP130N10T IXTA(P)130N10T.pdf
IXTP130N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 67ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTA130N10T IXTA130N10T.PDF
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
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IXTA130N10T-TRL IXTA130N10T.PDF
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
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IXTA130N10T7 IXTA130N10T7.PDF
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
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IXTA340N04T4-7 IXTA340N04T4.pdf
IXTA340N04T4-7
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263-7; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Produkt ist nicht verfügbar
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IXTH340N04T4 IXTH(P)340N04T4.pdf
IXTH340N04T4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO247-3; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Produkt ist nicht verfügbar
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IXTA340N04T4 IXTA340N04T4.pdf
IXTA340N04T4
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Produkt ist nicht verfügbar
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IXTP340N04T4 IXTH(P)340N04T4.pdf
IXTP340N04T4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO220AB; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Produkt ist nicht verfügbar
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IXTT440N04T4HV IXTT440N04T4HV.pdf
IXTT440N04T4HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 440A; 940W; TO268HV; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 440A
Power dissipation: 940W
Case: TO268HV
On-state resistance: 1.25mΩ
Mounting: SMD
Gate charge: 480nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
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IXTQ3N150M IXTQ3N150M.pdf
IXTQ3N150M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.83A
Pulsed drain current: 9A
Power dissipation: 73W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 7.3Ω
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
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IXTH3N150 IXTH3N150.pdf
IXTH3N150
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
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DSP8-12A DSP8-12A.pdf
DSP8-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Kind of package: tube
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Power dissipation: 100W
auf Bestellung 452 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.1 EUR
28+2.57 EUR
31+2.36 EUR
35+2.09 EUR
50+1.9 EUR
100+1.87 EUR
Mindestbestellmenge: 24
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DSP8-12AS-TRL DSP8-12AS.pdf
DSP8-12AS-TRL
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Kind of package: reel; tape
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
auf Bestellung 792 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.37 EUR
24+3 EUR
27+2.73 EUR
Mindestbestellmenge: 22
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DSEP8-12A DSEP8-12A.pdf
DSEP8-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 40A; TO220AC; 60W; 40ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.96V
Max. forward impulse current: 40A
Power dissipation: 60W
Technology: HiPerFRED™
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.75 EUR
42+1.72 EUR
50+1.53 EUR
Mindestbestellmenge: 27
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DSEC16-12A DSEC16-12A.pdf
DSEC16-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Reverse recovery time: 40ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.94V
Max. forward impulse current: 40A
Power dissipation: 60W
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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DSEC16-12AS-TUB DSEC16-12AS.pdf
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A x2
Reverse recovery time: 40ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.96V
Max. forward impulse current: 40A
Power dissipation: 60W
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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DSP8-12S-TUB DSP8-12S.pdf
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Produkt ist nicht verfügbar
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DSP8-12AS-TUB DSP8-12AS.pdf
DSP8-12AS-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Produkt ist nicht verfügbar
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IXFQ22N60P3 IXFA(H,P,Q)22N60P3.pdf
IXFQ22N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO3P
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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IXTQ22N60P IXTQ22N60P.pdf
IXTQ22N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
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IXFH70N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh70n65x3-datasheet?assetguid=b5819e4b-925f-4a8e-b528-ff8e8c93904b
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 110A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 165ns
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IXFN170N65X2 IXFN170N65X2.pdf
IXFN170N65X2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 13mΩ
Gate charge: 434nC
Kind of channel: enhancement
Reverse recovery time: 270ns
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MID145-12A3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5
Case: Y4-M5
Semiconductor structure: diode/transistor
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 200A
Power dissipation: 700W
Max. off-state voltage: 1.2kV
Topology: boost chopper
Technology: NPT
Produkt ist nicht verfügbar
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IXFH320N10T2 IXFH(T)320N10T2.pdf
IXFH320N10T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
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IXFT320N10T2 IXFH(T)320N10T2.pdf IXFT320N10T2.pdf
IXFT320N10T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
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