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IXTT16P60P IXTT16P60P IXYS IXT_16P60P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO268
Mounting: SMD
Power dissipation: 460W
Gate charge: 92nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -16A
Kind of channel: enhancement
Drain-source voltage: -600V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 720mΩ
Reverse recovery time: 440ns
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PLB150 PLB150 IXYS PLB150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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PLB150STR IXYS PLB150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC2125N CPC2125N IXYS CPC2125N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC x2
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 400V AC; max. 400V DC
Case: SO8
Max. operating current: 0.1A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
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CPC2125NTR IXYS CPC2125N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC x2
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 400V AC; max. 400V DC
Case: SO8
Max. operating current: 0.1A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
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MDD142-14N1MDD142-14N1
MDD142-14N1MDD142-14N1
 MDD142-14N1 IXYS MDD142-14N1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Case: Y4-M6
Kind of package: bulk
Max. forward impulse current: 4.7kA
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 165A
Max. load current: 300A
Semiconductor structure: double series
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IXXN100N60B3H1 IXXN100N60B3H1 IXYS IXXN100N60B3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W
Technology: GenX3™; XPT™
Power dissipation: 500W
Case: SOT227B
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 440A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
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IXFK120N30T IXFK120N30T IXYS IXFK(X)120N30T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264
Power dissipation: 960W
Gate charge: 265nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
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MUBW50-12A8 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Mechanical mounting: screw
Technology: NPT
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IXSG40N65L2K IXYS power-semiconductor-sic-mosfet-ixsg40n65l2k-datasheet?assetguid=15bde63b-8e75-40b2-8290-b484f25a2b34 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 40A; 174W; TOLL
Type of transistor: N-MOSFET
Power dissipation: 174W
Case: TOLL
Mounting: SMD
Gate charge: 64nC
On-state resistance: 60Ω
Polarisation: N
Technology: SiC
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: -5...20V
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IXTQ22N50P IXTQ22N50P IXYS IXTH(Q,V)22N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
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IXTH22N50P IXTH22N50P IXYS IXTH(Q,V)22N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
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IXTQ60N20L2 IXTQ60N20L2 IXYS IXTH(T,Q)60N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO3P
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of channel: enhancement
Reverse recovery time: 330ns
Features of semiconductor devices: linear power mosfet
Kind of package: tube
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IXTA60N20T IXTA60N20T IXYS IXTA(P,Q)60N20T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO263; 118ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 500W
Case: TO263
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 73nC
Kind of channel: enhancement
Reverse recovery time: 118ns
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
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IXTA60N20T-TRL IXTA60N20T-TRL IXYS littelfuse-discrete-mosfets-ixt-60n20t-datasheet?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 200V; 60A; 500W; D2PAK,TO263; 118ns
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 500W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 73nC
Kind of channel: enhancement
Reverse recovery time: 118ns
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IXTA60N20X4 IXTA60N20X4 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixta60n20x4-datasheet?assetguid=2b3218dd-12ed-427b-9078-1e7ab94ad93a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X4-Class; N; 200V; 60A; 250W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: X4-Class
Polarisation: N
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhancement
Reverse recovery time: 110ns
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IXTH60N20X4 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixth60n20x4-datasheet?assetguid=6d5361e1-8da4-4f6c-9b68-d39e4489d126 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X4-Class; N; 200V; 60A; 250W; TO247-3; 110ns
Type of transistor: N-MOSFET
Technology: X4-Class
Polarisation: N
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 33nC
Kind of channel: enhancement
Reverse recovery time: 110ns
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IXTP60N20X4 IXTP60N20X4 IXYS IXTP60N20X4_DS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X4-Class; N; 200V; 60A; 250W; TO220-3; 110ns
Type of transistor: N-MOSFET
Technology: X4-Class
Polarisation: N
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 33nC
Kind of channel: enhancement
Reverse recovery time: 110ns
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IXTT60N20L2 IXTT60N20L2 IXYS IXTH(T,Q)60N20L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO268; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 255nC
Kind of channel: enhancement
Reverse recovery time: 330ns
Features of semiconductor devices: linear power mosfet
Kind of package: tube
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IXFA16N50P-TRL IXFA16N50P-TRL IXYS littelfuse-discrete-mosfets-ixf-16n50p-datasheet?assetguid=bb00d7c9-0646-4c67-89ce-480fb9520851 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 16A; 300W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Technology: HiPerFET™
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IXTA16N50P-TRL IXTA16N50P-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 16A; 300W; D2PAK,TO263; 400ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of channel: enhancement
Reverse recovery time: 400ns
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MCC26-16io1B MCC26-16io1B IXYS MCC26-16io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.27V
Case: TO240AA
Kind of package: bulk
Max. forward impulse current: 520A
Gate current: 100/200mA
Max. forward voltage: 1.27V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 27A
Semiconductor structure: double series
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MDD26-16N1B MDD26-16N1B IXYS MDD26-16N1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 36A; TO240AA; Ufmax: 1.05V
Max. forward impulse current: 555A
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 36A
Max. load current: 60A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
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MCD26-16io8B MCD26-16io8B IXYS MCD26-16io8B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. forward impulse current: 520A
Gate current: 100/200mA
Max. forward voltage: 1.27V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 27A
Max. load current: 42A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
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MCC26-16io8B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V
Gate current: 100/200mA
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 27A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
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IXFH46N65X2W IXYS ixfh64n65x2w-datasheet?assetguid=8f26fe38-2800-4147-8599-7c18fc4773c8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 46A; 650W; TO247-3; 210ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 650W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 90nC
Kind of channel: enhancement
Reverse recovery time: 210ns
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IXTA4N150HV-TRL IXTA4N150HV-TRL IXYS littelfuse-discrete-mosfets-ixta4n150hv-datasheet?assetguid=ba849f96-97bf-4690-9a95-fae4b36fe859 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1.5kV; 4A; 280W; D2PAK,TO263AB; 900ns
Type of transistor: N-MOSFET
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: D2PAK; TO263AB
Gate-source voltage: 30V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of channel: enhancement
Reverse recovery time: 900ns
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IXTT4N150HV-TRL IXYS littelfuse-discrete-mosfets-ixta4n150hv-datasheet?assetguid=ba849f96-97bf-4690-9a95-fae4b36fe859 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1.5kV; 4A; 280W; D3PAK,TO268; 900ns
Type of transistor: N-MOSFET
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: D3PAK; TO268
Gate-source voltage: 30V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of channel: enhancement
Reverse recovery time: 900ns
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FDM47-06KC5FDM47-06KC5
FDM47-06KC5FDM47-06KC5
 FDM47-06KC5 IXYS FDM47-06KC5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Gate charge: 150nC
Polarisation: unipolar
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Features of semiconductor devices: super junction coolmos
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Semiconductor structure: diode/transistor
Case: ISOPLUS i4-pac™ x024a
On-state resistance: 45mΩ
Topology: buck chopper
Mounting: THT
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IXTA15N50L2-TRL IXTA15N50L2-TRL IXYS littelfuse-discrete-mosfets-ixt-15n50-datasheet?assetguid=e0766732-683f-41fb-b1d7-3cf72c201de1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 15A; 300W; D2PAK,TO263; 570ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of channel: enhancement
Reverse recovery time: 570ns
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IXTH6N50D2 IXTH6N50D2 IXYS IXTA(H,P)6N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
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IXTA6N50D2 IXTA6N50D2 IXYS IXTA(H,P)6N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
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IXTP6N50D2 IXTP6N50D2 IXYS IXTA(H,P)6N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
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IXTQ26N50P IXTQ26N50P IXYS IXTQ(T,V)26N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
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IXTQ36N50P IXTQ36N50P IXYS IXTH(Q,T,V)36N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXFA26N50P3 IXFA26N50P3 IXYS IXFH26N50P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Power dissipation: 500W
Gate charge: 42nC
Polarisation: unipolar
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
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IXTY1R6N50D2 IXTY1R6N50D2 IXYS IXTA(P,Y)1R6N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 23.7nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 400ns
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19+4.55 EUR
25+3.76 EUR
30+3.61 EUR
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IXTA6N50D2-TRL IXTA6N50D2-TRL IXYS littelfuse-discrete-mosfets-ixt-6n50-datasheet?assetguid=55bbd511-42cb-4098-a3a2-75365a398f37 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 6A; 300W; D2PAK,TO263; 350ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 96nC
Reverse recovery time: 0.35µs
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IXTN46N50L IXTN46N50L IXYS IXTN46N50L.pdf Category: Transistor modules
Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.16Ω
Gate charge: 260nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 0.6µs
Type of semiconductor module: MOSFET transistor
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IXTK46N50L IXTK46N50L IXYS IXTK(X)46N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; 700W; TO264; 600ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.6µs
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IXTX46N50L IXTX46N50L IXYS IXTK(X)46N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; 700W; PLUS247™; 600ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.6µs
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IXFJ26N50P3 IXFJ26N50P3 IXYS IXFJ26N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 78A
Power dissipation: 180W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 0.295Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXFH36N50P IXFH36N50P IXYS IXFH(V,T)36N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
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IXFQ26N50P3 IXFQ26N50P3 IXYS IXFH26N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO3P
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFR36N50P IXFR36N50P IXYS IXFR36N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; 156W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 19A
Power dissipation: 156W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MIXG240W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
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MIXG240W1200TEH IXYS media?resourcetype=datasheets&amp;itemid=da34aa4f-918f-4eb9-8e52-be6c5ad3ffe1&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg240w1200teh%2520datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MIXG240W1200PZTEH IXYS MIXG240W1200PZTEH.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: current shunt; IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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LAA110P IXYS LAA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LAA110L LAA110L IXYS LAA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LAA110LS LAA110LS IXYS LAA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LAA110LSTR IXYS LAA100L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LAA110PLTR IXYS LAA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LAA110PTR IXYS LAA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LAA110STR IXYS LAA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LCB717 LCB717 IXYS LCB717.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1.5A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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6+14.38 EUR
10+13.13 EUR
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LCB717S LCB717S IXYS LCB717.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1.5A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LCB717STR IXYS LCB717.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1.5A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LBA110LS LBA110LS IXYS LBA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LBA110P LBA110P IXYS LBA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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IXTT16P60P IXT_16P60P.pdf
IXTT16P60P
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO268
Mounting: SMD
Power dissipation: 460W
Gate charge: 92nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -16A
Kind of channel: enhancement
Drain-source voltage: -600V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 720mΩ
Reverse recovery time: 440ns
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4+22.91 EUR
30+14.14 EUR
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PLB150 PLB150.pdf
PLB150
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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PLB150STR PLB150.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC2125N CPC2125N.pdf
CPC2125N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC x2
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 400V AC; max. 400V DC
Case: SO8
Max. operating current: 0.1A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
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CPC2125NTR CPC2125N.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC x2
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 400V AC; max. 400V DC
Case: SO8
Max. operating current: 0.1A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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MDD142-14N1 MDD142-14N1.pdf PCN241015_Y4-M6 screw.pdf
MDD142-14N1MDD142-14N1
MDD142-14N1MDD142-14N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Case: Y4-M6
Kind of package: bulk
Max. forward impulse current: 4.7kA
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 165A
Max. load current: 300A
Semiconductor structure: double series
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1+94.94 EUR
3+85.51 EUR
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IXXN100N60B3H1 IXXN100N60B3H1.pdf
IXXN100N60B3H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W
Technology: GenX3™; XPT™
Power dissipation: 500W
Case: SOT227B
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 440A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Produkt ist nicht verfügbar
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IXFK120N30T IXFK(X)120N30T.pdf
IXFK120N30T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264
Power dissipation: 960W
Gate charge: 265nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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MUBW50-12A8
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Mechanical mounting: screw
Technology: NPT
Produkt ist nicht verfügbar
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IXSG40N65L2K power-semiconductor-sic-mosfet-ixsg40n65l2k-datasheet?assetguid=15bde63b-8e75-40b2-8290-b484f25a2b34
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 40A; 174W; TOLL
Type of transistor: N-MOSFET
Power dissipation: 174W
Case: TOLL
Mounting: SMD
Gate charge: 64nC
On-state resistance: 60Ω
Polarisation: N
Technology: SiC
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: -5...20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IXTQ22N50P IXTH(Q,V)22N50P_S.pdf
IXTQ22N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+9 EUR
11+7.75 EUR
13+7 EUR
30+5.89 EUR
60+5.31 EUR
Mindestbestellmenge: 10 Stücke
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IXTH22N50P IXTH(Q,V)22N50P_S.pdf
IXTH22N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ60N20L2 IXTH(T,Q)60N20L2.pdf
IXTQ60N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO3P
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of channel: enhancement
Reverse recovery time: 330ns
Features of semiconductor devices: linear power mosfet
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA60N20T IXTA(P,Q)60N20T.pdf
IXTA60N20T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO263; 118ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 500W
Case: TO263
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 73nC
Kind of channel: enhancement
Reverse recovery time: 118ns
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA60N20T-TRL littelfuse-discrete-mosfets-ixt-60n20t-datasheet?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1
IXTA60N20T-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 200V; 60A; 500W; D2PAK,TO263; 118ns
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 500W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 73nC
Kind of channel: enhancement
Reverse recovery time: 118ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IXTA60N20X4 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixta60n20x4-datasheet?assetguid=2b3218dd-12ed-427b-9078-1e7ab94ad93a
IXTA60N20X4
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X4-Class; N; 200V; 60A; 250W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: X4-Class
Polarisation: N
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhancement
Reverse recovery time: 110ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXTH60N20X4 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixth60n20x4-datasheet?assetguid=6d5361e1-8da4-4f6c-9b68-d39e4489d126
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X4-Class; N; 200V; 60A; 250W; TO247-3; 110ns
Type of transistor: N-MOSFET
Technology: X4-Class
Polarisation: N
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 33nC
Kind of channel: enhancement
Reverse recovery time: 110ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXTP60N20X4 IXTP60N20X4_DS.pdf
IXTP60N20X4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X4-Class; N; 200V; 60A; 250W; TO220-3; 110ns
Type of transistor: N-MOSFET
Technology: X4-Class
Polarisation: N
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 33nC
Kind of channel: enhancement
Reverse recovery time: 110ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXTT60N20L2 IXTH(T,Q)60N20L2.pdf
IXTT60N20L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO268; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 255nC
Kind of channel: enhancement
Reverse recovery time: 330ns
Features of semiconductor devices: linear power mosfet
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFA16N50P-TRL littelfuse-discrete-mosfets-ixf-16n50p-datasheet?assetguid=bb00d7c9-0646-4c67-89ce-480fb9520851
IXFA16N50P-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 16A; 300W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Technology: HiPerFET™
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IXTA16N50P-TRL
IXTA16N50P-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 16A; 300W; D2PAK,TO263; 400ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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MCC26-16io1B MCC26-16io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC26-16io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.27V
Case: TO240AA
Kind of package: bulk
Max. forward impulse current: 520A
Gate current: 100/200mA
Max. forward voltage: 1.27V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 27A
Semiconductor structure: double series
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3+39.97 EUR
36+38.66 EUR
Mindestbestellmenge: 3 Stücke
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MDD26-16N1B MDD26-16N1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MDD26-16N1B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 36A; TO240AA; Ufmax: 1.05V
Max. forward impulse current: 555A
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 36A
Max. load current: 60A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD26-16io8B MCD26-16io8B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCD26-16io8B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. forward impulse current: 520A
Gate current: 100/200mA
Max. forward voltage: 1.27V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 27A
Max. load current: 42A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 36 Stücke
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MCC26-16io8B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V
Gate current: 100/200mA
Max. forward voltage: 1.65V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 27A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH46N65X2W ixfh64n65x2w-datasheet?assetguid=8f26fe38-2800-4147-8599-7c18fc4773c8
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 46A; 650W; TO247-3; 210ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 650W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 90nC
Kind of channel: enhancement
Reverse recovery time: 210ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXTA4N150HV-TRL littelfuse-discrete-mosfets-ixta4n150hv-datasheet?assetguid=ba849f96-97bf-4690-9a95-fae4b36fe859
IXTA4N150HV-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1.5kV; 4A; 280W; D2PAK,TO263AB; 900ns
Type of transistor: N-MOSFET
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: D2PAK; TO263AB
Gate-source voltage: 30V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of channel: enhancement
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IXTT4N150HV-TRL littelfuse-discrete-mosfets-ixta4n150hv-datasheet?assetguid=ba849f96-97bf-4690-9a95-fae4b36fe859
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1.5kV; 4A; 280W; D3PAK,TO268; 900ns
Type of transistor: N-MOSFET
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: D3PAK; TO268
Gate-source voltage: 30V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of channel: enhancement
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
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FDM47-06KC5 FDM47-06KC5.pdf
FDM47-06KC5FDM47-06KC5
FDM47-06KC5FDM47-06KC5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Gate charge: 150nC
Polarisation: unipolar
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Features of semiconductor devices: super junction coolmos
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Semiconductor structure: diode/transistor
Case: ISOPLUS i4-pac™ x024a
On-state resistance: 45mΩ
Topology: buck chopper
Mounting: THT
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+12.67 EUR
10+12.08 EUR
Mindestbestellmenge: 7 Stücke
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IXTA15N50L2-TRL littelfuse-discrete-mosfets-ixt-15n50-datasheet?assetguid=e0766732-683f-41fb-b1d7-3cf72c201de1
IXTA15N50L2-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 15A; 300W; D2PAK,TO263; 570ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of channel: enhancement
Reverse recovery time: 570ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IXTH6N50D2 IXTA(H,P)6N50D2.pdf
IXTH6N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+12.76 EUR
10+10.57 EUR
30+9.89 EUR
120+9.03 EUR
Mindestbestellmenge: 7 Stücke
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IXTA6N50D2 IXTA(H,P)6N50D2.pdf
IXTA6N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+14.02 EUR
10+11.79 EUR
25+9.9 EUR
50+9.12 EUR
Mindestbestellmenge: 7 Stücke
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IXTP6N50D2 IXTA(H,P)6N50D2.pdf
IXTP6N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+12.38 EUR
10+8.78 EUR
50+7.04 EUR
100+6.81 EUR
Mindestbestellmenge: 7 Stücke
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IXTQ26N50P IXTQ(T,V)26N50P_S.pdf
IXTQ26N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
auf Bestellung 163 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+8.68 EUR
11+7.98 EUR
13+6.93 EUR
30+6.84 EUR
Mindestbestellmenge: 10 Stücke
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IXTQ36N50P IXTH(Q,T,V)36N50P_S.pdf
IXTQ36N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+13.92 EUR
30+11.88 EUR
Mindestbestellmenge: 7 Stücke
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IXFA26N50P3 IXFH26N50P3.pdf
IXFA26N50P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Power dissipation: 500W
Gate charge: 42nC
Polarisation: unipolar
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
33+2.65 EUR
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IXTY1R6N50D2 IXTA(P,Y)1R6N50D2.pdf
IXTY1R6N50D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 23.7nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 400ns
auf Bestellung 331 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
16+5.55 EUR
19+4.55 EUR
25+3.76 EUR
30+3.61 EUR
50+3.21 EUR
70+3.09 EUR
Mindestbestellmenge: 16 Stücke
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IXTA6N50D2-TRL littelfuse-discrete-mosfets-ixt-6n50-datasheet?assetguid=55bbd511-42cb-4098-a3a2-75365a398f37
IXTA6N50D2-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 6A; 300W; D2PAK,TO263; 350ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 96nC
Reverse recovery time: 0.35µs
Produkt ist nicht verfügbar
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IXTN46N50L IXTN46N50L.pdf
IXTN46N50L
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.16Ω
Gate charge: 260nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 0.6µs
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXTK46N50L IXTK(X)46N50L.pdf
IXTK46N50L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; 700W; TO264; 600ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.6µs
Produkt ist nicht verfügbar
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IXTX46N50L IXTK(X)46N50L.pdf
IXTX46N50L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; 700W; PLUS247™; 600ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.6µs
Produkt ist nicht verfügbar
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IXFJ26N50P3 IXFJ26N50P3.pdf
IXFJ26N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 78A
Power dissipation: 180W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 0.295Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXFH36N50P IXFH(V,T)36N50P_S.pdf
IXFH36N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFQ26N50P3 IXFH26N50P3.pdf
IXFQ26N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO3P
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFR36N50P IXFR36N50P.pdf
IXFR36N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; 156W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 19A
Power dissipation: 156W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MIXG240W1200PTEH
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MIXG240W1200TEH media?resourcetype=datasheets&amp;itemid=da34aa4f-918f-4eb9-8e52-be6c5ad3ffe1&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg240w1200teh%2520datasheet.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MIXG240W1200PZTEH MIXG240W1200PZTEH.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: current shunt; IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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LAA110P LAA100.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LAA110L LAA110L.pdf
LAA110L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LAA110LS LAA110L.pdf
LAA110LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LAA110LSTR LAA100L.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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LAA110PLTR LAA110L.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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LAA110PTR LAA110.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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LAA110STR LAA110.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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LCB717 LCB717.pdf
LCB717
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1.5A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6+14.38 EUR
10+13.13 EUR
Mindestbestellmenge: 6 Stücke
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LCB717S LCB717.pdf
LCB717S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1.5A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCB717STR LCB717.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1.5A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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LBA110LS LBA110L.pdf
LBA110LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LBA110P LBA110.pdf
LBA110P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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