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IXFA180N10T2 IXFA180N10T2 IXYS IXFA(P)180N10T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 66ns
Features of semiconductor devices: thrench gate power mosfet
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IXFP180N10T2 IXFP180N10T2 IXYS IXFA(P)180N10T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 66ns
Features of semiconductor devices: thrench gate power mosfet
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11+8.02 EUR
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IXTA180N10T IXTA180N10T IXYS IXTA(P)180N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 72ns
Features of semiconductor devices: thrench gate power mosfet
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11+7.87 EUR
25+6.41 EUR
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IXTA80N10T IXTA80N10T IXYS IXTA(P)80N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA80N10T-TRL IXTA80N10T-TRL IXYS littelfuse-discrete-mosfets-ixtp80n10t-datasheet?assetguid=97c849e2-6910-43ce-9bda-8b33b853f553 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 80A; 230W; D2PAK,TO263; 100ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
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IXTA180N10T-TRL IXTA180N10T-TRL IXYS littelfuse-discrete-mosfets-ixt-180n10t-datasheet?assetguid=a45c8ae2-5c3f-4d3f-be24-0a3d6e97b45b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 180A; Idm: 180A; 480W; D2PAK
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Pulsed drain current: 180A
Power dissipation: 480W
Case: D2PAK
Gate-source voltage: 20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 72ns
Technology: Trench
Application: automotive industry
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IXTP180N10T IXTP180N10T IXYS IXTA(P)180N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 72ns
Features of semiconductor devices: thrench gate power mosfet
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IXFA180N10T2-TRL IXFA180N10T2-TRL IXYS littelfuse-discrete-mosfets-ixf-180n10t2-datasheet?assetguid=fe756911-5a6e-4383-b388-3883df0a0b48 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; D2PAK,TO263; 66ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 66ns
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IXTA180N10T7 IXYS littelfuse-discrete-mosfets-ixta180n10t7-datasheet?assetguid=63142f38-9ba5-4484-ab78-644b1c6ee8aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 480W; TO263-7; 100ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
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IXTA180N10T7-TRL IXYS littelfuse-discrete-mosfets-ixta180n10t7-datasheet?assetguid=63142f38-9ba5-4484-ab78-644b1c6ee8aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; TO263-7; 100ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
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IXTH180N10T IXYS 9eb2cdbcabd045fc94224c3d8305fcd7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 480W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
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IXTQ180N10T IXYS PdfFile387540.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; TO3P; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
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DHG60C600HB DHG60C600HB IXYS DHG60C600HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 200A; TO247-3; tube; 180W
Max. off-state voltage: 0.6kV
Load current: 30A x2
Max. forward impulse current: 200A
Max. forward voltage: 2.21V
Case: TO247-3
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 40ns
Mounting: THT
Power dissipation: 180W
Features of semiconductor devices: fast switching
Semiconductor structure: common cathode; double
Type of diode: rectifying
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DHG60I1200HA DHG60I1200HA IXYS DHG60I1200HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; Ifsm: 500A; TO247-2; tube; 360W
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 0.5kA
Max. forward voltage: 2.34V
Case: TO247-2
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 360W
Features of semiconductor devices: fast switching
Semiconductor structure: single diode
Type of diode: rectifying
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DHG60U1200LB-TRR IXYS DHG60U1200LB.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Max. forward voltage: 3.15V
Case: SMPD-B
Kind of package: reel; tape
Technology: Sonic FRD™
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DHG60U1200LB-TUB IXYS media?resourcetype=datasheets&itemid=18f98573-a03e-4696-beb4-d5c97f0ab1a8&filename=Littelfuse-Power-Semiconductors-DHG60U1200LB-Datasheet Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Max. forward voltage: 3.15V
Case: SMPD-B
Kind of package: tube
Technology: Sonic FRD™
Produkt ist nicht verfügbar
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IXFR44N50Q IXFR44N50Q IXYS IXFR44N50Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 313W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 313W
Case: ISOPLUS247™
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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3+29.05 EUR
4+27.11 EUR
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IXFA14N60P-TRL IXFA14N60P-TRL IXYS littelfuse-discrete-mosfets-ixf-14n60p-datasheet?assetguid=9b66dd8c-b998-4e01-b450-afadebd1db30 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 14A; 300W; D2PAK,TO263; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate charge: 36nC
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IXTY14N60X2-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; 600V; 14A; 180W; TO252/DPAK; 320ns
Type of transistor: N-MOSFET
Technology: X2-Class
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: TO252/DPAK
Gate-source voltage: 30V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 320ns
Gate charge: 16.7nC
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MCMA450UH1600TEH IXYS Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; 1.6kV; If: 450A; Ifsm: 2.4kA
Type of bridge rectifier: half-controlled
Max. forward impulse current: 2.4kA
Version: module
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: Press-in PCB
Load current: 450A
Case: E3-Pack
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IXFT24N90P-TRL IXYS littelfuse-discrete-mosfets-ixf-24n90p-datasheet?assetguid=1850cbbc-4a71-4b6c-9e4b-bd580f61e590 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 900V; 24A; 660W; D3PAK,TO268; 300ns
Mounting: SMD
Power dissipation: 660W
Gate charge: 130nC
Technology: HiPerFET™
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D3PAK; TO268
On-state resistance: 0.42Ω
Reverse recovery time: 300ns
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IXSJ25N120R1 IXYS power-semiconductor-sic-mosfet-ixsj25n120r1-datasheet?assetguid=41aa58a1-83ff-4308-9387-9a356004e0b6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 25A; 75.3W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 75.3W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
On-state resistance: 62mΩ
Polarisation: N
Technology: SiC
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Gate-source voltage: -4...21V
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IXFT24N80P IXFT24N80P IXYS IXFH(K,T)24N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Mounting: SMD
Power dissipation: 650W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268
On-state resistance: 0.4Ω
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IXFA10N60P-TRL IXFA10N60P-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: 30V
On-state resistance: 0.74Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate charge: 32nC
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IXTA10N60P IXTA10N60P IXYS media?resourcetype=datasheets&itemid=2CD94402-C675-4847-A76E-45DC222A7AF8&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-10N60P-Datasheet.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK,TO263AB; 500ns
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: D2PAK; TO263AB
Gate-source voltage: 30V
On-state resistance: 0.74Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 32nC
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IXFH60N65X2W IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IXSA60N65L2-7TR IXYS power-semiconductor-sic-mosfet-ixsa60n65l2-7tr-datasheet?assetguid=13dbac17-813e-4c03-8ede-0725d4259010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 60A
Case: D2PAK-7
Gate-source voltage: -5...20V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 249W
Gate charge: 94.7nC
Technology: SiC
On-state resistance: 40Ω
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IXSG60N65L2K IXYS power-semiconductor-sic-mosfet-ixsg60n65l2k-datasheet?assetguid=fc242485-266f-41e4-ac41-70a3366d5139 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; TOLL
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 60A
Case: TOLL
Gate-source voltage: -5...20V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 249W
Gate charge: 94.7nC
Technology: SiC
On-state resistance: 40Ω
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IXSH60N65L2KHV IXYS Littlefuse_7-24-2025_Power_Semiconductor_SiC_MOSFET_IXSH60N65L2KHV_Datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; TO247-4
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-4
Gate-source voltage: -5...20V
Mounting: THT
Kind of channel: enhancement
Power dissipation: 249W
Gate charge: 94.7nC
Technology: SiC
On-state resistance: 40Ω
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IXFA12N65X2-TRL IXFA12N65X2-TRL IXYS littelfuse-discrete-mosfets-ixf-12n65x2-datasheet?assetguid=ca7fb720-7825-4c0e-b2dd-7746de20884a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 12A; 180W; D2PAK,TO263; 155ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
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IXTK600N04T2 IXTK600N04T2 IXYS IXTK(X)600N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 590nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
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IXFJ20N85X IXFJ20N85X IXYS IXFJ20N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 9.5A; Idm: 50A; 110W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 110W
Gate charge: 63nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: ISO247™
On-state resistance: 0.36Ω
Reverse recovery time: 190ns
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IXFP4N85X IXFP4N85X IXYS IXFA(P,Y)4N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: THT
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
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IXFA4N85X IXFA4N85X IXYS IXFA(P,Y)4N85X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO263
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
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IXFY4N85X IXFY4N85X IXYS IXFA(P,Y)4N85X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO252
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
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IXFA8N85XHV IXFA8N85XHV IXYS IXFP(Q)8N85X_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W
Mounting: SMD
Pulsed drain current: 16A
Power dissipation: 200W
Gate charge: 17nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: TO263HV
On-state resistance: 0.85Ω
Reverse recovery time: 125ns
auf Bestellung 31 Stücke:
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13+7 EUR
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IXFK66N85X IXFK66N85X IXYS IXFK(X)66N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 65mΩ
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXFH14N85X IXFH14N85X IXYS IXFA(H,P)14N85X_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO247-3; 116ns
Mounting: THT
Power dissipation: 460W
Gate charge: 30nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
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IXFH30N85X IXFH30N85X IXYS IXFH30N85X_IXFT30N85XHV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO247-3; 160ns
Mounting: THT
Power dissipation: 695W
Gate charge: 68nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.23Ω
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
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IXFT50N85XHV IXFT50N85XHV IXYS IXF_50N85X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Mounting: SMD
Power dissipation: 890W
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268HV
On-state resistance: 0.105Ω
Reverse recovery time: 218ns
Produkt ist nicht verfügbar
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IXFX66N85X IXFX66N85X IXYS IXFK(X)66N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; PLUS247™; 250ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 65mΩ
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXFA14N85XHV IXFA14N85XHV IXYS IXFA(H,P)14N85X_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Mounting: SMD
Power dissipation: 460W
Gate charge: 30nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263HV
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
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IXFA14N85XHV-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 850V; 14A; 460W; D2PAK-3; 116ns
Mounting: SMD
Power dissipation: 460W
Gate charge: 30nC
Technology: HiPerFET™
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK-3
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
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IXFA20N85XHV-TRL IXFA20N85XHV-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 850V; 20A; 540W; D2PAK,TO263AB; 190ns
Mounting: SMD
Power dissipation: 540W
Gate charge: 63nC
Technology: HiPerFET™
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263AB
Reverse recovery time: 190ns
Produkt ist nicht verfügbar
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IXFH20N85X IXFH20N85X IXYS IXFH(P)20N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO247-3; 190ns
Mounting: THT
Power dissipation: 540W
Gate charge: 63nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.33Ω
Reverse recovery time: 190ns
Produkt ist nicht verfügbar
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IXFK50N85X IXFK50N85X IXYS IXF_50N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Mounting: THT
Power dissipation: 890W
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 0.105Ω
Reverse recovery time: 218ns
Produkt ist nicht verfügbar
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IXFH70N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh70n65x3-datasheet?assetguid=b5819e4b-925f-4a8e-b528-ff8e8c93904b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Reverse recovery time: 165ns
Pulsed drain current: 110A
Power dissipation: 780W
Gate charge: 66nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 70A
Produkt ist nicht verfügbar
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IXFT70N65X3HV IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; D3PAK,TO268
Case: D3PAK; TO268
Mounting: SMD
Type of transistor: N-MOSFET
Technology: X3-Class
Produkt ist nicht verfügbar
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IXFN170N65X2 IXFN170N65X2 IXYS IXFN170N65X2.pdf Category: Transistor modules
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Case: SOT227B
Kind of channel: enhancement
Drain-source voltage: 650V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±30V
Semiconductor structure: single transistor
On-state resistance: 13mΩ
Reverse recovery time: 270ns
Pulsed drain current: 340A
Type of semiconductor module: MOSFET transistor
Power dissipation: 1.17kW
Gate charge: 434nC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 170A
Produkt ist nicht verfügbar
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IXTT10N100D2-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 10A; 695W; D3PAK,TO268; 1.2us
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 200nC
Reverse recovery time: 1.2µs
Produkt ist nicht verfügbar
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IXTT110N10L2 IXTT110N10L2 IXYS IXTH(T)110N10L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
Produkt ist nicht verfügbar
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IXTQ110N10P IXTQ110N10P IXYS IXTQ110N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
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IXTT110N10L2-TRL IXYS PdfFile135152.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 110A; 600W; D3PAK,TO268; 230ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 260nC
Reverse recovery time: 230ns
Produkt ist nicht verfügbar
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IXTT110N10P IXTT110N10P IXYS IXTQ110N10P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
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IXTP160N10T IXTP160N10T IXYS IXT_160N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
On-state resistance: 7mΩ
Reverse recovery time: 60ns
Mounting: THT
Power dissipation: 430W
Gate charge: 132nC
Polarisation: unipolar
Technology: Trench™
Drain current: 160A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
auf Bestellung 230 Stücke:
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12+7.59 EUR
17+5.27 EUR
50+4.38 EUR
100+4.26 EUR
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DMA30P1600HR DMA30P1600HR IXYS DMA30P1600HR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; Ifsm: 255A; ISO247™; tube; 115W
Mounting: THT
Max. forward impulse current: 255A
Max. forward voltage: 1.23V
Power dissipation: 115W
Max. off-state voltage: 1.6kV
Load current: 30A
Kind of package: tube
Semiconductor structure: double series
Case: ISO247™
Type of diode: rectifying
auf Bestellung 30 Stücke:
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8+10.94 EUR
10+9.66 EUR
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MDNA50P2200TG IXYS MDNA50P2200TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Max. forward impulse current: 850A
Max. forward voltage: 1.09V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
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MDNA700P2200CC IXYS littelfuse-diode-modules-dual-mdna700p2200cc-datasheet?assetguid=c926db6b-d806-48cc-a63f-5ae7c494cb13 Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 700A; ComPack; Ufmax: 1.05V
Max. forward impulse current: 20kA
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 700A
Kind of package: bulk
Semiconductor structure: double series
Case: ComPack
Produkt ist nicht verfügbar
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MCNA55P2200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 55A; TO240AA; Ufmax: 1.56V
Gate current: 95/200mA
Max. forward voltage: 1.56V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 55A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
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MCNA120P2200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 120A; TO240AA; screw
Gate current: 100/200mA
Max. forward voltage: 1.78V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 120A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
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IXFA180N10T2 IXFA(P)180N10T2.pdf
IXFA180N10T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 66ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 111 Stücke:
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11+8.43 EUR
14+6.32 EUR
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IXFP180N10T2 IXFA(P)180N10T2.pdf
IXFP180N10T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 66ns
Features of semiconductor devices: thrench gate power mosfet
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10+8.94 EUR
11+8.02 EUR
14+6.53 EUR
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IXTA180N10T IXTA(P)180N10T.pdf
IXTA180N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 72ns
Features of semiconductor devices: thrench gate power mosfet
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AnzahlPrivatkunde
10+9.45 EUR
11+7.87 EUR
25+6.41 EUR
50+5.31 EUR
100+5.15 EUR
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IXTA80N10T IXTA(P)80N10T.pdf
IXTA80N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTA80N10T-TRL littelfuse-discrete-mosfets-ixtp80n10t-datasheet?assetguid=97c849e2-6910-43ce-9bda-8b33b853f553
IXTA80N10T-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 80A; 230W; D2PAK,TO263; 100ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
Produkt ist nicht verfügbar
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IXTA180N10T-TRL littelfuse-discrete-mosfets-ixt-180n10t-datasheet?assetguid=a45c8ae2-5c3f-4d3f-be24-0a3d6e97b45b
IXTA180N10T-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 180A; Idm: 180A; 480W; D2PAK
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Pulsed drain current: 180A
Power dissipation: 480W
Case: D2PAK
Gate-source voltage: 20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 72ns
Technology: Trench
Application: automotive industry
Produkt ist nicht verfügbar
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IXTP180N10T IXTA(P)180N10T.pdf
IXTP180N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 72ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFA180N10T2-TRL littelfuse-discrete-mosfets-ixf-180n10t2-datasheet?assetguid=fe756911-5a6e-4383-b388-3883df0a0b48
IXFA180N10T2-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; D2PAK,TO263; 66ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 66ns
Produkt ist nicht verfügbar
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IXTA180N10T7 littelfuse-discrete-mosfets-ixta180n10t7-datasheet?assetguid=63142f38-9ba5-4484-ab78-644b1c6ee8aa
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 480W; TO263-7; 100ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
Produkt ist nicht verfügbar
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IXTA180N10T7-TRL littelfuse-discrete-mosfets-ixta180n10t7-datasheet?assetguid=63142f38-9ba5-4484-ab78-644b1c6ee8aa
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; TO263-7; 100ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
Produkt ist nicht verfügbar
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IXTH180N10T 9eb2cdbcabd045fc94224c3d8305fcd7.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 480W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
Produkt ist nicht verfügbar
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IXTQ180N10T PdfFile387540.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; TO3P; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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DHG60C600HB DHG60C600HB.pdf
DHG60C600HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 200A; TO247-3; tube; 180W
Max. off-state voltage: 0.6kV
Load current: 30A x2
Max. forward impulse current: 200A
Max. forward voltage: 2.21V
Case: TO247-3
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 40ns
Mounting: THT
Power dissipation: 180W
Features of semiconductor devices: fast switching
Semiconductor structure: common cathode; double
Type of diode: rectifying
Produkt ist nicht verfügbar
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DHG60I1200HA DHG60I1200HA.pdf
DHG60I1200HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; Ifsm: 500A; TO247-2; tube; 360W
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 0.5kA
Max. forward voltage: 2.34V
Case: TO247-2
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 360W
Features of semiconductor devices: fast switching
Semiconductor structure: single diode
Type of diode: rectifying
Produkt ist nicht verfügbar
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DHG60U1200LB-TRR DHG60U1200LB.pdf
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Max. forward voltage: 3.15V
Case: SMPD-B
Kind of package: reel; tape
Technology: Sonic FRD™
Produkt ist nicht verfügbar
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DHG60U1200LB-TUB media?resourcetype=datasheets&itemid=18f98573-a03e-4696-beb4-d5c97f0ab1a8&filename=Littelfuse-Power-Semiconductors-DHG60U1200LB-Datasheet
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Max. forward voltage: 3.15V
Case: SMPD-B
Kind of package: tube
Technology: Sonic FRD™
Produkt ist nicht verfügbar
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IXFR44N50Q IXFR44N50Q.pdf
IXFR44N50Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 313W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 313W
Case: ISOPLUS247™
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 97 Stücke:
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AnzahlPrivatkunde
3+29.05 EUR
4+27.11 EUR
10+25.25 EUR
Mindestbestellmenge: 3 Stücke
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IXFA14N60P-TRL littelfuse-discrete-mosfets-ixf-14n60p-datasheet?assetguid=9b66dd8c-b998-4e01-b450-afadebd1db30
IXFA14N60P-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 14A; 300W; D2PAK,TO263; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate charge: 36nC
Produkt ist nicht verfügbar
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IXTY14N60X2-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; 600V; 14A; 180W; TO252/DPAK; 320ns
Type of transistor: N-MOSFET
Technology: X2-Class
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: TO252/DPAK
Gate-source voltage: 30V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 320ns
Gate charge: 16.7nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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MCMA450UH1600TEH
Hersteller: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; 1.6kV; If: 450A; Ifsm: 2.4kA
Type of bridge rectifier: half-controlled
Max. forward impulse current: 2.4kA
Version: module
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: Press-in PCB
Load current: 450A
Case: E3-Pack
Produkt ist nicht verfügbar
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IXFT24N90P-TRL littelfuse-discrete-mosfets-ixf-24n90p-datasheet?assetguid=1850cbbc-4a71-4b6c-9e4b-bd580f61e590
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 900V; 24A; 660W; D3PAK,TO268; 300ns
Mounting: SMD
Power dissipation: 660W
Gate charge: 130nC
Technology: HiPerFET™
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D3PAK; TO268
On-state resistance: 0.42Ω
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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IXSJ25N120R1 power-semiconductor-sic-mosfet-ixsj25n120r1-datasheet?assetguid=41aa58a1-83ff-4308-9387-9a356004e0b6
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 25A; 75.3W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 75.3W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
On-state resistance: 62mΩ
Polarisation: N
Technology: SiC
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Gate-source voltage: -4...21V
Produkt ist nicht verfügbar
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IXFT24N80P IXFH(K,T)24N80P.pdf
IXFT24N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Mounting: SMD
Power dissipation: 650W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268
On-state resistance: 0.4Ω
Produkt ist nicht verfügbar
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IXFA10N60P-TRL
IXFA10N60P-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: 30V
On-state resistance: 0.74Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate charge: 32nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IXTA10N60P media?resourcetype=datasheets&itemid=2CD94402-C675-4847-A76E-45DC222A7AF8&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-10N60P-Datasheet.PDF
IXTA10N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK,TO263AB; 500ns
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: D2PAK; TO263AB
Gate-source voltage: 30V
On-state resistance: 0.74Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 32nC
Produkt ist nicht verfügbar
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IXFH60N65X2W
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXSA60N65L2-7TR power-semiconductor-sic-mosfet-ixsa60n65l2-7tr-datasheet?assetguid=13dbac17-813e-4c03-8ede-0725d4259010
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 60A
Case: D2PAK-7
Gate-source voltage: -5...20V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 249W
Gate charge: 94.7nC
Technology: SiC
On-state resistance: 40Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IXSG60N65L2K power-semiconductor-sic-mosfet-ixsg60n65l2k-datasheet?assetguid=fc242485-266f-41e4-ac41-70a3366d5139
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; TOLL
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 60A
Case: TOLL
Gate-source voltage: -5...20V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 249W
Gate charge: 94.7nC
Technology: SiC
On-state resistance: 40Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IXSH60N65L2KHV Littlefuse_7-24-2025_Power_Semiconductor_SiC_MOSFET_IXSH60N65L2KHV_Datasheet.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; TO247-4
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-4
Gate-source voltage: -5...20V
Mounting: THT
Kind of channel: enhancement
Power dissipation: 249W
Gate charge: 94.7nC
Technology: SiC
On-state resistance: 40Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
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IXFA12N65X2-TRL littelfuse-discrete-mosfets-ixf-12n65x2-datasheet?assetguid=ca7fb720-7825-4c0e-b2dd-7746de20884a
IXFA12N65X2-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 12A; 180W; D2PAK,TO263; 155ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Produkt ist nicht verfügbar
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IXTK600N04T2 IXTK(X)600N04T2.pdf
IXTK600N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 590nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
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IXFJ20N85X IXFJ20N85X.pdf
IXFJ20N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 9.5A; Idm: 50A; 110W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 110W
Gate charge: 63nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: ISO247™
On-state resistance: 0.36Ω
Reverse recovery time: 190ns
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AnzahlPrivatkunde
5+17.02 EUR
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IXFP4N85X IXFA(P,Y)4N85X.pdf
IXFP4N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: THT
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
13+6.85 EUR
50+3.65 EUR
100+3.32 EUR
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IXFA4N85X IXFA(P,Y)4N85X.pdf
IXFA4N85X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO263
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
18+4.95 EUR
50+2.64 EUR
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IXFY4N85X IXFA(P,Y)4N85X.pdf
IXFY4N85X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO252
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6+14.17 EUR
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IXFA8N85XHV IXFP(Q)8N85X_HV.pdf
IXFA8N85XHV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W
Mounting: SMD
Pulsed drain current: 16A
Power dissipation: 200W
Gate charge: 17nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: TO263HV
On-state resistance: 0.85Ω
Reverse recovery time: 125ns
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
11+7.91 EUR
12+7.09 EUR
13+7 EUR
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IXFK66N85X IXFK(X)66N85X.pdf
IXFK66N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 65mΩ
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXFH14N85X IXFA(H,P)14N85X_HV.pdf
IXFH14N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO247-3; 116ns
Mounting: THT
Power dissipation: 460W
Gate charge: 30nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
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IXFH30N85X IXFH30N85X_IXFT30N85XHV.pdf
IXFH30N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO247-3; 160ns
Mounting: THT
Power dissipation: 695W
Gate charge: 68nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.23Ω
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
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IXFT50N85XHV IXF_50N85X.pdf
IXFT50N85XHV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Mounting: SMD
Power dissipation: 890W
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268HV
On-state resistance: 0.105Ω
Reverse recovery time: 218ns
Produkt ist nicht verfügbar
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IXFX66N85X IXFK(X)66N85X.pdf
IXFX66N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; PLUS247™; 250ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 65mΩ
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXFA14N85XHV IXFA(H,P)14N85X_HV.pdf
IXFA14N85XHV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Mounting: SMD
Power dissipation: 460W
Gate charge: 30nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263HV
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
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IXFA14N85XHV-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 850V; 14A; 460W; D2PAK-3; 116ns
Mounting: SMD
Power dissipation: 460W
Gate charge: 30nC
Technology: HiPerFET™
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK-3
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IXFA20N85XHV-TRL
IXFA20N85XHV-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 850V; 20A; 540W; D2PAK,TO263AB; 190ns
Mounting: SMD
Power dissipation: 540W
Gate charge: 63nC
Technology: HiPerFET™
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263AB
Reverse recovery time: 190ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IXFH20N85X IXFH(P)20N85X.pdf
IXFH20N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO247-3; 190ns
Mounting: THT
Power dissipation: 540W
Gate charge: 63nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.33Ω
Reverse recovery time: 190ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXFK50N85X IXF_50N85X.pdf
IXFK50N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Mounting: THT
Power dissipation: 890W
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 0.105Ω
Reverse recovery time: 218ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXFH70N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh70n65x3-datasheet?assetguid=b5819e4b-925f-4a8e-b528-ff8e8c93904b
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Reverse recovery time: 165ns
Pulsed drain current: 110A
Power dissipation: 780W
Gate charge: 66nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 70A
Produkt ist nicht verfügbar
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IXFT70N65X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; D3PAK,TO268
Case: D3PAK; TO268
Mounting: SMD
Type of transistor: N-MOSFET
Technology: X3-Class
Produkt ist nicht verfügbar
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IXFN170N65X2 IXFN170N65X2.pdf
IXFN170N65X2
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Case: SOT227B
Kind of channel: enhancement
Drain-source voltage: 650V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±30V
Semiconductor structure: single transistor
On-state resistance: 13mΩ
Reverse recovery time: 270ns
Pulsed drain current: 340A
Type of semiconductor module: MOSFET transistor
Power dissipation: 1.17kW
Gate charge: 434nC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 170A
Produkt ist nicht verfügbar
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IXTT10N100D2-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 10A; 695W; D3PAK,TO268; 1.2us
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 200nC
Reverse recovery time: 1.2µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
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IXTT110N10L2 IXTH(T)110N10L2.pdf
IXTT110N10L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
Produkt ist nicht verfügbar
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IXTQ110N10P IXTQ110N10P-DTE.pdf
IXTQ110N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
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IXTT110N10L2-TRL PdfFile135152.pdf
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 110A; 600W; D3PAK,TO268; 230ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 260nC
Reverse recovery time: 230ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
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IXTT110N10P IXTQ110N10P-DTE.pdf
IXTT110N10P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
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IXTP160N10T IXT_160N10T.pdf
IXTP160N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
On-state resistance: 7mΩ
Reverse recovery time: 60ns
Mounting: THT
Power dissipation: 430W
Gate charge: 132nC
Polarisation: unipolar
Technology: Trench™
Drain current: 160A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.59 EUR
17+5.27 EUR
50+4.38 EUR
100+4.26 EUR
Mindestbestellmenge: 12 Stücke
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DMA30P1600HR DMA30P1600HR.pdf
DMA30P1600HR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; Ifsm: 255A; ISO247™; tube; 115W
Mounting: THT
Max. forward impulse current: 255A
Max. forward voltage: 1.23V
Power dissipation: 115W
Max. off-state voltage: 1.6kV
Load current: 30A
Kind of package: tube
Semiconductor structure: double series
Case: ISO247™
Type of diode: rectifying
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
8+10.94 EUR
10+9.66 EUR
30+8.85 EUR
Mindestbestellmenge: 8 Stücke
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MDNA50P2200TG MDNA50P2200TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Max. forward impulse current: 850A
Max. forward voltage: 1.09V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
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MDNA700P2200CC littelfuse-diode-modules-dual-mdna700p2200cc-datasheet?assetguid=c926db6b-d806-48cc-a63f-5ae7c494cb13
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 700A; ComPack; Ufmax: 1.05V
Max. forward impulse current: 20kA
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 700A
Kind of package: bulk
Semiconductor structure: double series
Case: ComPack
Produkt ist nicht verfügbar
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MCNA55P2200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 55A; TO240AA; Ufmax: 1.56V
Gate current: 95/200mA
Max. forward voltage: 1.56V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 55A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
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MCNA120P2200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 120A; TO240AA; screw
Gate current: 100/200mA
Max. forward voltage: 1.78V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 120A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
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