| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXFA16N50P3 | IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 330W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns Technology: HiPerFET™; Polar3™ |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH16N50D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 695W Case: TO247-3 On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: depletion Reverse recovery time: 130ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXFH16N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns Technology: HiPerFET™; Polar™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXFH16N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 330W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns Technology: HiPerFET™; Polar3™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTQ16N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 300W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 400ns Technology: PolarHT™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTT16N50D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 695W Case: TO268 On-state resistance: 0.3Ω Mounting: SMD Kind of package: tube Kind of channel: depletion Reverse recovery time: 130ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXFA16N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 300W Case: TO263 On-state resistance: 0.4Ω Mounting: SMD Gate charge: 43nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Polar™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTA16N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 300W Case: TO263 On-state resistance: 0.4Ω Mounting: SMD Gate charge: 43nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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PAA140L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS Type of relay: solid state Max. operating current: 250mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 1ms Control current max.: 50mA On-state resistance: 8Ω Mounting: THT Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO x2 |
auf Bestellung 61 Stücke: Lieferzeit 14-21 Tag (e) |
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PAA140 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS Type of relay: solid state Max. operating current: 250mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 1ms Control current max.: 50mA On-state resistance: 8Ω Mounting: THT Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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PAA140S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS Type of relay: solid state Max. operating current: 250mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 1ms Control current max.: 50mA On-state resistance: 8Ω Mounting: SMT Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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PAA140LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS Type of relay: solid state Max. operating current: 250mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 1ms Control current max.: 50mA On-state resistance: 8Ω Mounting: SMT Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| PAA140LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS Type of relay: solid state Max. operating current: 250mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 1ms Control current max.: 50mA On-state resistance: 8Ω Mounting: SMT Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO x2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| PAA140STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS Type of relay: solid state Max. operating current: 250mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 1ms Control current max.: 50mA On-state resistance: 8Ω Mounting: SMT Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO x2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| IXD2012NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge; half-bridge; SOIC8; 2.3A; Ch: 2; MOSFET; 10÷20V Mounting: SMD Case: SOIC8 Maximum output current: 2.3A Output current: 2.3A Type of integrated circuit: driver Power dissipation: 0.625W Operating temperature: -40...125°C Integrated circuit features: MOSFET Pulse fall time: 20ns Kind of integrated circuit: half-bridge Number of channels: 2 Impulse rise time: 30ns Topology: H-bridge Supply voltage: 10...20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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IXTP26P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns Type of transistor: P-MOSFET Drain-source voltage: -100V Drain current: -26A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube Reverse recovery time: 70ns Gate charge: 52nC Polarisation: unipolar Technology: TrenchP™ |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTY26P10T-TRL | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; 100V; 26A; 150W; DPAK,TO252AA Type of transistor: P-MOSFET Drain-source voltage: 100V Drain current: 26A Power dissipation: 150W Case: DPAK; TO252AA Gate-source voltage: 15V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTY26P10T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252 Type of transistor: P-MOSFET Drain-source voltage: -100V Drain current: -26A Power dissipation: 150W Case: TO252 Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhancement Kind of package: tube Reverse recovery time: 70ns Gate charge: 52nC Polarisation: unipolar Technology: TrenchP™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTA26P10T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263 Type of transistor: P-MOSFET Drain-source voltage: -100V Drain current: -26A Power dissipation: 150W Case: TO263 Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhancement Kind of package: tube Reverse recovery time: 70ns Gate charge: 52nC Polarisation: unipolar Technology: TrenchP™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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XS170S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 244 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGT10N170A | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO268 Collector current: 5A Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 20A Power dissipation: 140W Gate charge: 29nC Technology: NPT Features of semiconductor devices: high voltage Type of transistor: IGBT Turn-on time: 107ns Kind of package: tube Turn-off time: 240ns Mounting: SMD Collector-emitter voltage: 1.7kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXGT10N170 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO268 Collector current: 10A Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 70A Power dissipation: 110W Gate charge: 32nC Technology: NPT Features of semiconductor devices: high voltage Type of transistor: IGBT Turn-on time: 0.3µs Kind of package: tube Turn-off time: 630ns Mounting: SMD Collector-emitter voltage: 1.7kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| IXGT10N170-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.7kV; 10A; 110W; TO268 Collector current: 10A Case: TO268 Power dissipation: 110W Type of transistor: IGBT Kind of package: reel; tape Mounting: SMD Collector-emitter voltage: 1.7kV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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IXTQ150N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P Mounting: THT Case: TO3P Kind of package: tube Power dissipation: 714W Gate charge: 0.19µC Polarisation: unipolar Technology: PolarHT™ Drain current: 150A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 13mΩ Reverse recovery time: 150ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXFA220N06T3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 220A Power dissipation: 440W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 136nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 38ns Technology: HiPerFET™; TrenchT3™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXFH220N06T3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 220A Power dissipation: 440W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 136nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 38ns Technology: HiPerFET™; TrenchT3™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXTA120P065T-TRL | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; P; 65V; 298W; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: P Drain-source voltage: 65V Power dissipation: 298W Case: D2PAK; TO263 Gate-source voltage: 15V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXGK72N60B3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 450A Mounting: THT Gate charge: 225nC Kind of package: tube Turn-on time: 63ns Turn-off time: 370ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| MCMA25P1600TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V Gate current: 55/80mA Max. forward voltage: 1.52V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: screw Load current: 25A Kind of package: bulk Semiconductor structure: double series Case: TO240AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| MDMA425P1600PT-PC | IXYS |
Category: Diode modules Description: Module: diode; 1.6kV; 425A; screw Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 1.6kV Load current: 425A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 24 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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IXGA20N120A3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 180W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 50nC Kind of package: tube Turn-on time: 66ns Turn-off time: 1.53µs |
auf Bestellung 589 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYH20N120C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 230W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 88A Mounting: THT Gate charge: 53nC Kind of package: tube Turn-on time: 60ns Turn-off time: 0.22µs |
auf Bestellung 233 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGH20N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 180W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 50nC Kind of package: tube Turn-on time: 66ns Turn-off time: 1.53µs |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGA20N120B3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 180W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 51nC Kind of package: tube Turn-on time: 61ns Turn-off time: 720ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXYA20N120C3HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2 Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 278W Case: TO263-2 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: SMD Gate charge: 53nC Kind of package: tube Turn-on time: 60ns Turn-off time: 215ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXYA20N120A4HV-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; TO263 Type of transistor: IGBT Case: TO263 Gate-emitter voltage: ±20V Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXYT20N120C3D1HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 17A Power dissipation: 230W Case: TO268HV Gate-emitter voltage: ±20V Pulsed collector current: 88A Mounting: SMD Gate charge: 53nC Kind of package: tube Turn-on time: 60ns Turn-off time: 0.22µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXGA20N120A3-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 180W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 180W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 50nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXGA20N120B3-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 36A; 180W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 36A Power dissipation: 180W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Turn-off time: 150ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXYA20N120A4HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 80A; 375W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 80A Power dissipation: 375W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 135A Mounting: SMD Gate charge: 46nC Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXYA20N120B4HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 76A; 375W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 76A Power dissipation: 375W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 130A Mounting: SMD Gate charge: 44nC Kind of package: tube Turn-off time: 200ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| IXYA20N120B4HV-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 68A; 375W; TO263HV Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 68A Power dissipation: 375W Case: TO263HV Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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IXYA20N120C3HV-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 278W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 278W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Turn-off time: 90ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXYA20N120C4HV-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 68A; 375W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 68A Power dissipation: 375W Case: D2PAK Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXYH20N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 278W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 53nC Kind of package: tube Turn-on time: 60ns Turn-off time: 0.22µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| IXYH20N120C4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 36A; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 36A Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| IXYJ20N120C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247 Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 21A Power dissipation: 105W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 53nC Kind of package: tube Turn-on time: 20ns Turn-off time: 90ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
 |
IXYP20N120A4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 80A; 375W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 80A Power dissipation: 375W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 135A Mounting: THT Gate charge: 46nC Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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|
IXYP20N120B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 76A; 375W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 76A Power dissipation: 375W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 130A Mounting: THT Gate charge: 44nC Kind of package: tube Turn-off time: 200ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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|
IXYP20N120C4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 68A; 375W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 68A Power dissipation: 375W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 44nC Kind of package: tube Turn-off time: 160ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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|
IXGK120N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 830W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT Gate charge: 420nC Kind of package: tube Turn-on time: 105ns Turn-off time: 1365ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| IXYK120N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 320A; 1.5kW; TO264 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 320A Power dissipation: 1.5kW Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 800A Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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|
IXGK120N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 830W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 370A Mounting: THT Gate charge: 470nC Kind of package: tube Turn-on time: 122ns Turn-off time: 885ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
 |
IXYN120N120C3 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B Technology: GenX3™; XPT™ Collector current: 120A Power dissipation: 1.2kW Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 700A Max. off-state voltage: 1.2kV Electrical mounting: screw Semiconductor structure: single transistor Type of semiconductor module: IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| MMIX1G120N120A3V1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 105A Power dissipation: 400W Case: SMPD Gate-emitter voltage: ±20V Pulsed collector current: 700A Mounting: SMD Gate charge: 420nC Kind of package: tube Turn-on time: 105ns Turn-off time: 1365ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
 |
IXTU4N70X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Pulsed drain current: 8A Power dissipation: 80W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 11.8nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXFA16N50P3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 4.11 EUR |
| 24+ | 3.69 EUR |
| 27+ | 3.25 EUR |
| IXTH16N50D2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH16N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH16N50P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTQ16N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTT16N50D2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFA16N50P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA16N50P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PAA140L |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: THT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: THT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 18.65 EUR |
| 50+ | 15.67 EUR |
| PAA140 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: THT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: THT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PAA140S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PAA140LS |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PAA140LSTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PAA140STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXD2012NTR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; SOIC8; 2.3A; Ch: 2; MOSFET; 10÷20V
Mounting: SMD
Case: SOIC8
Maximum output current: 2.3A
Output current: 2.3A
Type of integrated circuit: driver
Power dissipation: 0.625W
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 20ns
Kind of integrated circuit: half-bridge
Number of channels: 2
Impulse rise time: 30ns
Topology: H-bridge
Supply voltage: 10...20V
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; SOIC8; 2.3A; Ch: 2; MOSFET; 10÷20V
Mounting: SMD
Case: SOIC8
Maximum output current: 2.3A
Output current: 2.3A
Type of integrated circuit: driver
Power dissipation: 0.625W
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 20ns
Kind of integrated circuit: half-bridge
Number of channels: 2
Impulse rise time: 30ns
Topology: H-bridge
Supply voltage: 10...20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTP26P10T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 70ns
Gate charge: 52nC
Polarisation: unipolar
Technology: TrenchP™
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 70ns
Gate charge: 52nC
Polarisation: unipolar
Technology: TrenchP™
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 42.54 EUR |
| IXTY26P10T-TRL |
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; 26A; 150W; DPAK,TO252AA
Type of transistor: P-MOSFET
Drain-source voltage: 100V
Drain current: 26A
Power dissipation: 150W
Case: DPAK; TO252AA
Gate-source voltage: 15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; 26A; 150W; DPAK,TO252AA
Type of transistor: P-MOSFET
Drain-source voltage: 100V
Drain current: 26A
Power dissipation: 150W
Case: DPAK; TO252AA
Gate-source voltage: 15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IXTY26P10T |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 70ns
Gate charge: 52nC
Polarisation: unipolar
Technology: TrenchP™
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 70ns
Gate charge: 52nC
Polarisation: unipolar
Technology: TrenchP™
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXTA26P10T |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 70ns
Gate charge: 52nC
Polarisation: unipolar
Technology: TrenchP™
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 70ns
Gate charge: 52nC
Polarisation: unipolar
Technology: TrenchP™
Produkt ist nicht verfügbar
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| XS170S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 4.75 EUR |
| 50+ | 3.12 EUR |
| IXGT10N170A |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO268
Collector current: 5A
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 140W
Gate charge: 29nC
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 107ns
Kind of package: tube
Turn-off time: 240ns
Mounting: SMD
Collector-emitter voltage: 1.7kV
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO268
Collector current: 5A
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 140W
Gate charge: 29nC
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 107ns
Kind of package: tube
Turn-off time: 240ns
Mounting: SMD
Collector-emitter voltage: 1.7kV
Produkt ist nicht verfügbar
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| IXGT10N170 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO268
Collector current: 10A
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Power dissipation: 110W
Gate charge: 32nC
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 0.3µs
Kind of package: tube
Turn-off time: 630ns
Mounting: SMD
Collector-emitter voltage: 1.7kV
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO268
Collector current: 10A
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Power dissipation: 110W
Gate charge: 32nC
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 0.3µs
Kind of package: tube
Turn-off time: 630ns
Mounting: SMD
Collector-emitter voltage: 1.7kV
Produkt ist nicht verfügbar
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| IXGT10N170-TRL |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.7kV; 10A; 110W; TO268
Collector current: 10A
Case: TO268
Power dissipation: 110W
Type of transistor: IGBT
Kind of package: reel; tape
Mounting: SMD
Collector-emitter voltage: 1.7kV
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.7kV; 10A; 110W; TO268
Collector current: 10A
Case: TO268
Power dissipation: 110W
Type of transistor: IGBT
Kind of package: reel; tape
Mounting: SMD
Collector-emitter voltage: 1.7kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
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| IXTQ150N15P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Power dissipation: 714W
Gate charge: 0.19µC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Power dissipation: 714W
Gate charge: 0.19µC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXFA220N06T3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Technology: HiPerFET™; TrenchT3™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Technology: HiPerFET™; TrenchT3™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH220N06T3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Technology: HiPerFET™; TrenchT3™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
Technology: HiPerFET™; TrenchT3™
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXTA120P065T-TRL |
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 65V; 298W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: P
Drain-source voltage: 65V
Power dissipation: 298W
Case: D2PAK; TO263
Gate-source voltage: 15V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 65V; 298W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: P
Drain-source voltage: 65V
Power dissipation: 298W
Case: D2PAK; TO263
Gate-source voltage: 15V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXGK72N60B3H1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MCMA25P1600TA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Gate current: 55/80mA
Max. forward voltage: 1.52V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 25A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Gate current: 55/80mA
Max. forward voltage: 1.52V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 25A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Produkt ist nicht verfügbar
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| MDMA425P1600PT-PC |
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; 1.6kV; 425A; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Load current: 425A
Category: Diode modules
Description: Module: diode; 1.6kV; 425A; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Load current: 425A
Produkt ist nicht verfügbar
Mindestbestellmenge: 24 Stücke
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| IXGA20N120A3 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
auf Bestellung 589 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 10.41 EUR |
| 10+ | 8.52 EUR |
| IXYH20N120C3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 12.3 EUR |
| 8+ | 11.6 EUR |
| IXGH20N120A3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 11.63 EUR |
| 11+ | 7.84 EUR |
| 30+ | 6.79 EUR |
| IXGA20N120B3 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYA20N120C3HV |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IXYA20N120A4HV-TRL |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; TO263
Type of transistor: IGBT
Case: TO263
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; TO263
Type of transistor: IGBT
Case: TO263
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXYT20N120C3D1HV |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 17A
Power dissipation: 230W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 17A
Power dissipation: 230W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGA20N120A3-TRL |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 180W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 180W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 180W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 180W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| IXGA20N120B3-TRL |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 36A; 180W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 36A
Power dissipation: 180W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Turn-off time: 150ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 36A; 180W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 36A
Power dissipation: 180W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Turn-off time: 150ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXYA20N120A4HV |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 375W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 375W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 135A
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 375W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 375W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 135A
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Produkt ist nicht verfügbar
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| IXYA20N120B4HV |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 76A; 375W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 76A
Power dissipation: 375W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 130A
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Turn-off time: 200ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 76A; 375W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 76A
Power dissipation: 375W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 130A
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Turn-off time: 200ns
Produkt ist nicht verfügbar
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| IXYA20N120B4HV-TRL |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 68A; 375W; TO263HV
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 68A
Power dissipation: 375W
Case: TO263HV
Mounting: SMD
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 68A; 375W; TO263HV
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 68A
Power dissipation: 375W
Case: TO263HV
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| IXYA20N120C3HV-TRL |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 278W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 278W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Turn-off time: 90ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 278W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 278W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Turn-off time: 90ns
Produkt ist nicht verfügbar
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| IXYA20N120C4HV-TRL |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 68A; 375W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 68A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 68A; 375W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 68A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXYH20N120C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Produkt ist nicht verfügbar
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| IXYH20N120C4 |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 36A; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 36A
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 36A; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 36A
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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| IXYJ20N120C3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 21A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 20ns
Turn-off time: 90ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 21A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 20ns
Turn-off time: 90ns
Produkt ist nicht verfügbar
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| IXYP20N120A4 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 135A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 135A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXYP20N120B4 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 76A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 76A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 130A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-off time: 200ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 76A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 76A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 130A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-off time: 200ns
Produkt ist nicht verfügbar
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| IXYP20N120C4 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 68A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 68A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-off time: 160ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 68A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 68A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-off time: 160ns
Produkt ist nicht verfügbar
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| IXGK120N120A3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
Produkt ist nicht verfügbar
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| IXYK120N120B3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 320A; 1.5kW; TO264
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 320A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 320A; 1.5kW; TO264
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 320A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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| IXGK120N120B3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
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| IXYN120N120C3 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B
Technology: GenX3™; XPT™
Collector current: 120A
Power dissipation: 1.2kW
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B
Technology: GenX3™; XPT™
Collector current: 120A
Power dissipation: 1.2kW
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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| MMIX1G120N120A3V1 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 105A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 105A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
Produkt ist nicht verfügbar
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| IXTU4N70X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 3.17 EUR |
| 30+ | 2.86 EUR |
| 34+ | 2.52 EUR |