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IXDN614SI IXDN614SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 23 Stücke:
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19+3.79 EUR
22+3.39 EUR
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IXFN220N20X3 IXFN220N20X3 IXYS IXFN220N20X3.pdf 200VProductBrief.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 128ns
Gate charge: 204nC
Kind of channel: enhancement
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IXTX8N150L IXTX8N150L IXYS IXTK(X)8N150L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Case: PLUS247™
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 8A
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
auf Bestellung 2 Stücke:
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2+44.43 EUR
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IXTP2N65X2 IXTP2N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89C4F8CE3158BF&compId=IXTP(Y)2N65X2.pdf?ci_sign=a1b44b73e461987c86a1219b0eef051f39a61060 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
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IXTP24N65X2M IXTP24N65X2M IXYS IXTP24N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
auf Bestellung 91 Stücke:
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15+5.09 EUR
21+3.42 EUR
50+3.29 EUR
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IXGH36N60B3 IXGH36N60B3 IXYS IXGH36N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
auf Bestellung 225 Stücke:
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12+6.49 EUR
14+5.22 EUR
30+4.4 EUR
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IXGH36N60B3C1 IXGH36N60B3C1 IXYS IXGx36N60B3C1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 47ns
Turn-off time: 350ns
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
auf Bestellung 1 Stücke:
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MCD132-12io1 IXYS MCD132-12io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Semiconductor module: diode-thyristor; 1.2kV; 130A; Y4-M6; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
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MCD132-14io1 IXYS MCD132-14io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Semiconductor module: diode-thyristor; 1.4kV; 130A; Y4-M6; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
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MCD132-16io1 IXYS MCD132-16IO1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Semiconductor module: diode-thyristor; 1.6kV; 130A; Y4-M6; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
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MCD132-18io1 IXYS MCD132-18io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Semiconductor module: diode-thyristor; 1.8kV; 130A; Y4-M6; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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IXFL82N60P IXFL82N60P IXYS IXFL82N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 55A
Power dissipation: 625W
Case: ISOPLUS264™
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
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5+14.5 EUR
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MCMA50P1200TA MCMA50P1200TA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.48V
Load current: 50A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: thyristor
auf Bestellung 25 Stücke:
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3+27.74 EUR
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MCMA50P1600TA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 50A; TO240AA; Ufmax: 1.48V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.48V
Load current: 50A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: thyristor
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MDMA50P1200TG IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82E9F44A6C80C4&compId=MDMA50P1200TG.pdf?ci_sign=c338cd758340ff753151ab05348149331307a229 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: diode
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MDMA50P1600TG IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82F5CADE9380C4&compId=MDMA50P1600TG.pdf?ci_sign=0a5f5597242916f0250f9ce76767b1af5665c5e0 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 50A; TO240AA; Ufmax: 1.09V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.6kV
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: diode
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IXFN50N120SK IXFN50N120SK IXYS media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 54ns
Gate charge: 115nC
Kind of channel: enhancement
auf Bestellung 8 Stücke:
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1+111.74 EUR
3+98.78 EUR
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IXFA130N10T2 IXFA130N10T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDDFC904CE7820&compId=IXFA(P)130N10T2.pdf?ci_sign=9f7a4995595efb7e18b0a338b9a9c0baa1ff9a83 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXFH230N10T IXFH230N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F37820&compId=IXFH230N10T.pdf?ci_sign=7906ddc75f59da0a6c8caab968b9ecc6143741fa Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 250nC
Reverse recovery time: 82ns
On-state resistance: 4.7mΩ
Drain current: 230A
Power dissipation: 650W
Drain-source voltage: 100V
Kind of channel: enhancement
Case: TO247-3
auf Bestellung 7 Stücke:
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7+10.51 EUR
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IXFP130N10T2 IXFP130N10T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDDFC904CE7820&compId=IXFA(P)130N10T2.pdf?ci_sign=9f7a4995595efb7e18b0a338b9a9c0baa1ff9a83 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 10.1mΩ
Drain current: 130A
Power dissipation: 360W
Drain-source voltage: 100V
Kind of channel: enhancement
Case: TO220AB
auf Bestellung 42 Stücke:
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16+4.49 EUR
18+4.03 EUR
20+3.58 EUR
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CPC1560G CPC1560G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D8C0C7&compId=CPC1560.pdf?ci_sign=c3c246383ef6fa3887c9a7b5b676f250f34749d1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Mounting: THT
Case: DIP8
Contacts configuration: SPST-NO
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 0.1ms
Turn-off time: 400µs
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 146 Stücke:
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14+5.21 EUR
16+4.58 EUR
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VVZ110-12IO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C861DB90B34D8BF&compId=VVZ110_VVZ175.pdf?ci_sign=07196062ed3a464ff7e33b39e08a02fdb9b7931a Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E
Version: module
Case: PWS-E
Leads: M6 screws
Electrical mounting: FASTON connectors; screw
Type of bridge rectifier: half-controlled
Mechanical mounting: screw
Gate current: 100/200mA
Max. forward voltage: 1.75V
Load current: 110A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.35kA
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IXTH50P10 IXTH50P10 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA07D75C831B8BF&compId=IXT_50P10.pdf?ci_sign=cc953308140627b6febcf9593e82ba0797b12d8b Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO247-3
auf Bestellung 306 Stücke:
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6+13.21 EUR
10+11.27 EUR
30+10.57 EUR
120+9.7 EUR
270+9.24 EUR
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IXTT50P10 IXTT50P10 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA07D75C831B8BF&compId=IXT_50P10.pdf?ci_sign=cc953308140627b6febcf9593e82ba0797b12d8b Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO268
auf Bestellung 17 Stücke:
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7+10.77 EUR
8+9.52 EUR
10+8.55 EUR
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IXFP60N25X3M IXFP60N25X3M IXYS IXFP60N25X3M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 36W
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 20 Stücke:
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9+8.55 EUR
10+7.58 EUR
12+6.15 EUR
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IXTN210P10T IXTN210P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE797949FD586272748&compId=IXTN210P10T.pdf?ci_sign=c7eaa6ff621298b381d20e5aabc3375642501283 Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Case: SOT227B
Semiconductor structure: single transistor
Polarisation: unipolar
Pulsed drain current: -800A
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 830W
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: TrenchP™
Type of semiconductor module: MOSFET transistor
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IXTR210P10T IXTR210P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA04275137A38BF&compId=IXTR210P10T.pdf?ci_sign=6be69c09b119a4bc5566676e52a110aa09280e61 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -195A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 8mΩ
Gate-source voltage: ±15V
Power dissipation: 390W
Kind of channel: enhancement
Technology: TrenchP™
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
2+39.27 EUR
3+34.73 EUR
10+31.53 EUR
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IXTX210P10T IXTX210P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03E7174C718BF&compId=IXTX210P10T.pdf?ci_sign=eb9be669937aaa10adc6b2be9042b5a5749257a3 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Kind of channel: enhancement
Technology: TrenchP™
auf Bestellung 15 Stücke:
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3+31.95 EUR
10+29.26 EUR
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CPC1510G CPC1510G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004780C7&compId=CPC1510.pdf?ci_sign=dca2f490d390e88ab018824ec0cbe6d4e63b3e56 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
auf Bestellung 450 Stücke:
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20+3.62 EUR
50+3.5 EUR
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CPC1510GS CPC1510GS IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9958FDF2EB56DF8BF&compId=CPC1510.pdf?ci_sign=9749f199defe3add8fb64a51a16864787d36708b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
auf Bestellung 245 Stücke:
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DSEC16-12A DSEC16-12A IXYS DSEC16-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 40ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.94V
Max. off-state voltage: 1.2kV
Load current: 8A x2
Max. forward impulse current: 40A
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
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DSEC16-12AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4F5F44C2260C4&compId=DSEC16-12AS.pdf?ci_sign=7fe88d45cfa69a339b55e2fa6635825aa1a7704b Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Mounting: SMD
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 1.96V
Max. off-state voltage: 1.2kV
Load current: 8A x2
Max. forward impulse current: 40A
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: D2PAK
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
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IXTQ120N20P IXTQ120N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9109183E093E27&compId=IXTK120N20P-DTE.pdf?ci_sign=8d92652847182241575b90496cedc624b85642c3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Gate-source voltage: ±20V
Power dissipation: 714W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
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PLB190 PLB190 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
auf Bestellung 240 Stücke:
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12+6.38 EUR
13+5.53 EUR
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PLB190S PLB190S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
auf Bestellung 12 Stücke:
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12+6.35 EUR
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PLB190STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
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IXTQ34N65X2M IXTQ34N65X2M IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtq34n65x2m_datasheet.pdf?assetguid=9e2804bf-85d4-45e2-ba6f-de4ee48d3cec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 27 Stücke:
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7+10.71 EUR
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IXTQ48N65X2M IXTQ48N65X2M IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 15 Stücke:
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6+13.08 EUR
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IXFP60N25X3 IXFP60N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48077B3DDB820&compId=IXFA(P%2CQ)60N25X3.pdf?ci_sign=40bf31d6f48e6a29413d60f94152aaab04d45448 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 300 Stücke:
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8+9.44 EUR
9+8.79 EUR
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IXTH32N65X IXTH32N65X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC14A9F2EB3820&compId=IXTH(P%2CQ)32N65X.pdf?ci_sign=6a88174097b72279f3942c45d4c91b42e2da5718 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 157 Stücke:
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9+8.45 EUR
10+7.61 EUR
11+6.72 EUR
30+6.03 EUR
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IXFN240N15T2 IXFN240N15T2 IXYS IXFN240N15T2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 460nC
Kind of channel: enhancement
auf Bestellung 1 Stücke:
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1+71.5 EUR
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DSS25-0025B DSS25-0025B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAD2C325DCD8BF&compId=DSS25-0025B.pdf?ci_sign=f6f65f217afdcd493a817c25caa07db6fbf77538 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 330A
Kind of package: tube
Power dissipation: 90W
Produkt ist nicht verfügbar
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IXFN36N100 IXFN36N100 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA766581850B820&compId=IXFN36N100.pdf?ci_sign=ed624506c3a3f62202f258b7df94949020d4b004 description Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 36A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.24Ω
Pulsed drain current: 144A
Power dissipation: 694W
Technology: HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 180ns
Gate charge: 380nC
Kind of channel: enhancement
auf Bestellung 18 Stücke:
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3+96.4 EUR
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CPC1973Y CPC1973Y IXYS CPC1973.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Case: SIP4
On-state resistance: 5Ω
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Max. operating current: 0.35mA
Turn-off time: 3ms
Turn-on time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Switched voltage: max. 400V AC
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Relay variant: 1-phase
auf Bestellung 44 Stücke:
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13+5.95 EUR
14+5.22 EUR
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IXFB82N60Q3 IXFB82N60Q3 IXYS IXFB82N60Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
auf Bestellung 13 Stücke:
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5+16.04 EUR
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IXTP15P15T IXTP15P15T IXYS IXT_15P15T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Gate charge: 48nC
Reverse recovery time: 116ns
On-state resistance: 0.24Ω
Power dissipation: 150W
Gate-source voltage: ±15V
auf Bestellung 182 Stücke:
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15+4.82 EUR
17+4.42 EUR
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100+3.13 EUR
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CPC1218Y CPC1218Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF21340C7&compId=CPC1218.pdf?ci_sign=9c98dc3d6e8c890d0b45503495283d4f4da9397b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 5÷12VDC; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 5...12V DC
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1.1Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Kind of output: MOSFET
auf Bestellung 136 Stücke:
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10+7.22 EUR
13+5.68 EUR
25+5.11 EUR
50+4.68 EUR
100+4.26 EUR
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CPC1393G CPC1393G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 4.57x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
auf Bestellung 221 Stücke:
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29+2.53 EUR
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CPC1393GV CPC1393GV IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 4.57x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
auf Bestellung 500 Stücke:
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19+3.85 EUR
100+2.52 EUR
500+2.03 EUR
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CMA50P1600FC CMA50P1600FC IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF097A4C94098BF&compId=CMA50P1600FC.pdf?ci_sign=b72ced94642464a929aa6ab7e507a6825f1b9885 Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80/200mA; THT; tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 80/200mA
Load current: 50A
Max. load current: 79A
Max. forward impulse current: 610A
Max. off-state voltage: 1.6kV
Kind of package: tube
Semiconductor structure: double series
Case: ISOPLUS i4-pac™ x024a
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DMA50P1200HB DMA50P1200HB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-3
auf Bestellung 42 Stücke:
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10+7.28 EUR
11+6.55 EUR
13+5.79 EUR
30+5.31 EUR
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DMA50P1200HR DMA50P1200HR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB45968090540C4&compId=DMA50P1200HR.pdf?ci_sign=a806f1fbc18861dcff822bd89a4281ead6ff11bb Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 555A; ISO247™; 210W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Kind of package: tube
Max. forward impulse current: 555A
Case: ISO247™
Max. forward voltage: 1.28V
Power dissipation: 210W
auf Bestellung 42 Stücke:
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6+13.13 EUR
7+11.83 EUR
10+10.45 EUR
30+9.58 EUR
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DMA50P1600HB DMA50P1600HB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-3
Mounting: THT
Type of diode: rectifying
Load current: 50A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.6kV
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
Produkt ist nicht verfügbar
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LDA111 LDA111 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 30V
Case: DIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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LDA111S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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LDA111STR LDA111STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 30V; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
Collector-emitter voltage: 30V
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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IXFN66N85X IXFN66N85X IXYS IXFN66N85X.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 230nC
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
2+57.13 EUR
3+50.46 EUR
Mindestbestellmenge: 2
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PLA140L PLA140L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98E60C7&compId=PLA140L.pdf?ci_sign=e9ab2af998e9385483102ff11a793c893e887522 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.11 EUR
18+4.15 EUR
Mindestbestellmenge: 15
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CMA30E1600PB CMA30E1600PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF07E7D1C4758BF&compId=CMA30E1600PB.pdf?ci_sign=93aaff634305ba81457d0cfdba5f3a374fb2216d Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO220AB; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO220AB
Gate current: 28/50mA
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 220A
Max. off-state voltage: 1.6kV
Kind of package: tube
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.73 EUR
28+2.62 EUR
29+2.47 EUR
50+2.4 EUR
Mindestbestellmenge: 16
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IXFP26N65X2 IXFP26N65X2 IXYS 238_K248734.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.01 EUR
10+8.34 EUR
Mindestbestellmenge: 8
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IXDN614SI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDN614SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.79 EUR
22+3.39 EUR
Mindestbestellmenge: 19
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IXFN220N20X3 IXFN220N20X3.pdf 200VProductBrief.pdf
IXFN220N20X3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 128ns
Gate charge: 204nC
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXTX8N150L IXTK(X)8N150L.pdf
IXTX8N150L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Case: PLUS247™
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 8A
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+44.43 EUR
Mindestbestellmenge: 2
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IXTP2N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89C4F8CE3158BF&compId=IXTP(Y)2N65X2.pdf?ci_sign=a1b44b73e461987c86a1219b0eef051f39a61060
IXTP2N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
Produkt ist nicht verfügbar
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IXTP24N65X2M IXTP24N65X2M.pdf
IXTP24N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.09 EUR
21+3.42 EUR
50+3.29 EUR
Mindestbestellmenge: 15
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IXGH36N60B3 IXGH36N60B3.pdf
IXGH36N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.49 EUR
14+5.22 EUR
30+4.4 EUR
Mindestbestellmenge: 12
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IXGH36N60B3C1 IXGx36N60B3C1-DTE.pdf
IXGH36N60B3C1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 47ns
Turn-off time: 350ns
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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MCD132-12io1 MCD132-12io1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Semiconductor module: diode-thyristor; 1.2kV; 130A; Y4-M6; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MCD132-14io1 MCD132-14io1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Semiconductor module: diode-thyristor; 1.4kV; 130A; Y4-M6; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MCD132-16io1 MCD132-16IO1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Semiconductor module: diode-thyristor; 1.6kV; 130A; Y4-M6; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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MCD132-18io1 MCD132-18io1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Semiconductor module: diode-thyristor; 1.8kV; 130A; Y4-M6; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
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IXFL82N60P IXFL82N60P.pdf
IXFL82N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 55A
Power dissipation: 625W
Case: ISOPLUS264™
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.5 EUR
Mindestbestellmenge: 5
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MCMA50P1200TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCMA50P1200TA
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.48V
Load current: 50A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: thyristor
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+27.74 EUR
Mindestbestellmenge: 3
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MCMA50P1600TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 50A; TO240AA; Ufmax: 1.48V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.48V
Load current: 50A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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MDMA50P1200TG pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82E9F44A6C80C4&compId=MDMA50P1200TG.pdf?ci_sign=c338cd758340ff753151ab05348149331307a229 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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MDMA50P1600TG pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82F5CADE9380C4&compId=MDMA50P1600TG.pdf?ci_sign=0a5f5597242916f0250f9ce76767b1af5665c5e0 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 50A; TO240AA; Ufmax: 1.09V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.6kV
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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IXFN50N120SK media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet
IXFN50N120SK
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 54ns
Gate charge: 115nC
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+111.74 EUR
3+98.78 EUR
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IXFA130N10T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDDFC904CE7820&compId=IXFA(P)130N10T2.pdf?ci_sign=9f7a4995595efb7e18b0a338b9a9c0baa1ff9a83
IXFA130N10T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFH230N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F37820&compId=IXFH230N10T.pdf?ci_sign=7906ddc75f59da0a6c8caab968b9ecc6143741fa
IXFH230N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 250nC
Reverse recovery time: 82ns
On-state resistance: 4.7mΩ
Drain current: 230A
Power dissipation: 650W
Drain-source voltage: 100V
Kind of channel: enhancement
Case: TO247-3
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.51 EUR
Mindestbestellmenge: 7
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IXFP130N10T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDDFC904CE7820&compId=IXFA(P)130N10T2.pdf?ci_sign=9f7a4995595efb7e18b0a338b9a9c0baa1ff9a83
IXFP130N10T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 10.1mΩ
Drain current: 130A
Power dissipation: 360W
Drain-source voltage: 100V
Kind of channel: enhancement
Case: TO220AB
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.49 EUR
18+4.03 EUR
20+3.58 EUR
Mindestbestellmenge: 16
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CPC1560G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D8C0C7&compId=CPC1560.pdf?ci_sign=c3c246383ef6fa3887c9a7b5b676f250f34749d1
CPC1560G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Mounting: THT
Case: DIP8
Contacts configuration: SPST-NO
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 0.1ms
Turn-off time: 400µs
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.21 EUR
16+4.58 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
VVZ110-12IO7 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C861DB90B34D8BF&compId=VVZ110_VVZ175.pdf?ci_sign=07196062ed3a464ff7e33b39e08a02fdb9b7931a
Hersteller: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E
Version: module
Case: PWS-E
Leads: M6 screws
Electrical mounting: FASTON connectors; screw
Type of bridge rectifier: half-controlled
Mechanical mounting: screw
Gate current: 100/200mA
Max. forward voltage: 1.75V
Load current: 110A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.35kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH50P10 pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA07D75C831B8BF&compId=IXT_50P10.pdf?ci_sign=cc953308140627b6febcf9593e82ba0797b12d8b
IXTH50P10
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO247-3
auf Bestellung 306 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.21 EUR
10+11.27 EUR
30+10.57 EUR
120+9.7 EUR
270+9.24 EUR
Mindestbestellmenge: 6
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IXTT50P10 pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA07D75C831B8BF&compId=IXT_50P10.pdf?ci_sign=cc953308140627b6febcf9593e82ba0797b12d8b
IXTT50P10
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO268
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.77 EUR
8+9.52 EUR
10+8.55 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFP60N25X3M IXFP60N25X3M.pdf
IXFP60N25X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 36W
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.55 EUR
10+7.58 EUR
12+6.15 EUR
Mindestbestellmenge: 9
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IXTN210P10T pVersion=0046&contRep=ZT&docId=005056AB752F1EE797949FD586272748&compId=IXTN210P10T.pdf?ci_sign=c7eaa6ff621298b381d20e5aabc3375642501283
IXTN210P10T
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Case: SOT227B
Semiconductor structure: single transistor
Polarisation: unipolar
Pulsed drain current: -800A
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 830W
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: TrenchP™
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTR210P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA04275137A38BF&compId=IXTR210P10T.pdf?ci_sign=6be69c09b119a4bc5566676e52a110aa09280e61
IXTR210P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -195A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 8mΩ
Gate-source voltage: ±15V
Power dissipation: 390W
Kind of channel: enhancement
Technology: TrenchP™
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+39.27 EUR
3+34.73 EUR
10+31.53 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXTX210P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03E7174C718BF&compId=IXTX210P10T.pdf?ci_sign=eb9be669937aaa10adc6b2be9042b5a5749257a3
IXTX210P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Kind of channel: enhancement
Technology: TrenchP™
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+31.95 EUR
10+29.26 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
CPC1510G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004780C7&compId=CPC1510.pdf?ci_sign=dca2f490d390e88ab018824ec0cbe6d4e63b3e56
CPC1510G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.62 EUR
50+3.5 EUR
300+3.27 EUR
Mindestbestellmenge: 20
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CPC1510GS pVersion=0046&contRep=ZT&docId=005056AB82531EE9958FDF2EB56DF8BF&compId=CPC1510.pdf?ci_sign=9749f199defe3add8fb64a51a16864787d36708b
CPC1510GS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.49 EUR
50+5.96 EUR
100+5.09 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
DSEC16-12A DSEC16-12A.pdf
DSEC16-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 40ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.94V
Max. off-state voltage: 1.2kV
Load current: 8A x2
Max. forward impulse current: 40A
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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DSEC16-12AS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4F5F44C2260C4&compId=DSEC16-12AS.pdf?ci_sign=7fe88d45cfa69a339b55e2fa6635825aa1a7704b
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Mounting: SMD
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 1.96V
Max. off-state voltage: 1.2kV
Load current: 8A x2
Max. forward impulse current: 40A
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: D2PAK
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ120N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9109183E093E27&compId=IXTK120N20P-DTE.pdf?ci_sign=8d92652847182241575b90496cedc624b85642c3
IXTQ120N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Gate-source voltage: ±20V
Power dissipation: 714W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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PLB190 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78
PLB190
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.38 EUR
13+5.53 EUR
50+4.76 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
PLB190S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78
PLB190S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.35 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
PLB190STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ34N65X2M littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtq34n65x2m_datasheet.pdf?assetguid=9e2804bf-85d4-45e2-ba6f-de4ee48d3cec
IXTQ34N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.71 EUR
8+9.62 EUR
10+8.51 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ48N65X2M
IXTQ48N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.08 EUR
7+11.8 EUR
10+10.42 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFP60N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48077B3DDB820&compId=IXFA(P%2CQ)60N25X3.pdf?ci_sign=40bf31d6f48e6a29413d60f94152aaab04d45448
IXFP60N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.44 EUR
9+8.79 EUR
10+7.78 EUR
50+6.55 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTH32N65X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC14A9F2EB3820&compId=IXTH(P%2CQ)32N65X.pdf?ci_sign=6a88174097b72279f3942c45d4c91b42e2da5718
IXTH32N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.45 EUR
10+7.61 EUR
11+6.72 EUR
30+6.03 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFN240N15T2 IXFN240N15T2.pdf
IXFN240N15T2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 460nC
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DSS25-0025B pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAD2C325DCD8BF&compId=DSS25-0025B.pdf?ci_sign=f6f65f217afdcd493a817c25caa07db6fbf77538
DSS25-0025B
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 330A
Kind of package: tube
Power dissipation: 90W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN36N100 description pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA766581850B820&compId=IXFN36N100.pdf?ci_sign=ed624506c3a3f62202f258b7df94949020d4b004
IXFN36N100
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 36A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.24Ω
Pulsed drain current: 144A
Power dissipation: 694W
Technology: HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 180ns
Gate charge: 380nC
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+109.11 EUR
3+96.4 EUR
10+86.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CPC1973Y CPC1973.pdf
CPC1973Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Case: SIP4
On-state resistance: 5Ω
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Max. operating current: 0.35mA
Turn-off time: 3ms
Turn-on time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Switched voltage: max. 400V AC
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Relay variant: 1-phase
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.95 EUR
14+5.22 EUR
25+4.75 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXFB82N60Q3 IXFB82N60Q3.pdf
IXFB82N60Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.04 EUR
Mindestbestellmenge: 5
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IXTP15P15T IXT_15P15T.pdf
IXTP15P15T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Gate charge: 48nC
Reverse recovery time: 116ns
On-state resistance: 0.24Ω
Power dissipation: 150W
Gate-source voltage: ±15V
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.82 EUR
17+4.42 EUR
50+3.56 EUR
100+3.13 EUR
Mindestbestellmenge: 15
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CPC1218Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF21340C7&compId=CPC1218.pdf?ci_sign=9c98dc3d6e8c890d0b45503495283d4f4da9397b
CPC1218Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 5÷12VDC; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 5...12V DC
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1.1Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Kind of output: MOSFET
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.22 EUR
13+5.68 EUR
25+5.11 EUR
50+4.68 EUR
100+4.26 EUR
Mindestbestellmenge: 10
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CPC1393G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640
CPC1393G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 4.57x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
auf Bestellung 221 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.53 EUR
Mindestbestellmenge: 29
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CPC1393GV pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640
CPC1393GV
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 4.57x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.85 EUR
100+2.52 EUR
500+2.03 EUR
Mindestbestellmenge: 19
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CMA50P1600FC pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF097A4C94098BF&compId=CMA50P1600FC.pdf?ci_sign=b72ced94642464a929aa6ab7e507a6825f1b9885
CMA50P1600FC
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80/200mA; THT; tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 80/200mA
Load current: 50A
Max. load current: 79A
Max. forward impulse current: 610A
Max. off-state voltage: 1.6kV
Kind of package: tube
Semiconductor structure: double series
Case: ISOPLUS i4-pac™ x024a
Produkt ist nicht verfügbar
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DMA50P1200HB
DMA50P1200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-3
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.28 EUR
11+6.55 EUR
13+5.79 EUR
30+5.31 EUR
Mindestbestellmenge: 10
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DMA50P1200HR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB45968090540C4&compId=DMA50P1200HR.pdf?ci_sign=a806f1fbc18861dcff822bd89a4281ead6ff11bb
DMA50P1200HR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 555A; ISO247™; 210W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Kind of package: tube
Max. forward impulse current: 555A
Case: ISO247™
Max. forward voltage: 1.28V
Power dissipation: 210W
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.13 EUR
7+11.83 EUR
10+10.45 EUR
30+9.58 EUR
Mindestbestellmenge: 6
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DMA50P1600HB
DMA50P1600HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-3
Mounting: THT
Type of diode: rectifying
Load current: 50A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.6kV
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
Produkt ist nicht verfügbar
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LDA111 pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea
LDA111
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 30V
Case: DIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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LDA111S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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LDA111STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea
LDA111STR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 30V; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
Collector-emitter voltage: 30V
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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IXFN66N85X IXFN66N85X.pdf
IXFN66N85X
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 230nC
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+57.13 EUR
3+50.46 EUR
Mindestbestellmenge: 2
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PLA140L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98E60C7&compId=PLA140L.pdf?ci_sign=e9ab2af998e9385483102ff11a793c893e887522
PLA140L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.11 EUR
18+4.15 EUR
Mindestbestellmenge: 15
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CMA30E1600PB pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF07E7D1C4758BF&compId=CMA30E1600PB.pdf?ci_sign=93aaff634305ba81457d0cfdba5f3a374fb2216d
CMA30E1600PB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO220AB; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO220AB
Gate current: 28/50mA
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 220A
Max. off-state voltage: 1.6kV
Kind of package: tube
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.73 EUR
28+2.62 EUR
29+2.47 EUR
50+2.4 EUR
Mindestbestellmenge: 16
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IXFP26N65X2 238_K248734.pdf
IXFP26N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.01 EUR
10+8.34 EUR
Mindestbestellmenge: 8
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