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MCMA110P1200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCMA140P1200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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DSEI2X101-06P DSEI2X101-06P IXYS DSEI2X101-06P.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; ECO-PAC 2; THT
Electrical mounting: THT
Max. forward impulse current: 1.2kA
Max. forward voltage: 1.17V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Load current: 96A x2
Max. load current: 192A
Kind of package: bulk
Semiconductor structure: double independent
Case: ECO-PAC 2
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IXTK170P10P IXTK170P10P IXYS IXTK170P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Drain current: -170A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 14mΩ
Reverse recovery time: 176ns
Mounting: THT
Power dissipation: 890W
Gate charge: 240nC
Polarisation: unipolar
Technology: PolarP™
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IXTK17N120L IXTK17N120L IXYS IXTK(X)17N120L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; TO264; 1.83us
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 0.9Ω
Reverse recovery time: 1.83µs
Mounting: THT
Power dissipation: 700W
Gate charge: 155nC
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
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PLB171PTR IXYS PLB171.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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DSSK30-018A DSSK30-018A IXYS DSSK30-018A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 180V; 15Ax2; TO247-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 180V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.72V
Max. forward impulse current: 120A
Power dissipation: 90W
Kind of package: tube
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IXTH64N10L2 IXTH64N10L2 IXYS IXTA(H,P)64N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
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DHG50X650NA DHG50X650NA IXYS DFE240X600NA.pdf Category: Diode modules
Description: Module: diode; double independent; 650V; If: 25Ax2; SOT227B; screw
Max. forward impulse current: 200A
Max. forward voltage: 2.03V
Type of semiconductor module: diode
Technology: Sonic FRD™
Mechanical mounting: screw
Max. off-state voltage: 650V
Electrical mounting: screw
Load current: 25A x2
Max. load current: 50A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
Reverse recovery time: 35ns
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DFE250X600NA DFE250X600NA IXYS DFE250X600NA.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 125Ax2; SOT227B; screw
Max. forward impulse current: 1.2kA
Type of semiconductor module: diode
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 125A x2
Max. load current: 250A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
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IXTQ14N60P IXTQ14N60P IXYS IXTA(P,Q)14N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
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IXFP14N60P IXFP14N60P IXYS IXFA(H,P)14N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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IXFH14N60P IXFH14N60P IXYS IXFA(H,P)14N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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IXFA14N60P IXFA14N60P IXYS IXFA(H,P)14N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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IXTA14N60P IXTA14N60P IXYS IXTA(P,Q)14N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO263; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
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IXTP14N60P IXTP14N60P IXYS IXTA(P,Q)14N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
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LAA108 LAA108 IXYS LAA108.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: THT
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 8Ω
Kind of output: MOSFET
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DH20-18A DH20-18A IXYS DH20-18A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 20A; Ifsm: 150A; TO247-2; tube; 140W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 150A
Kind of package: tube
Max. forward voltage: 2.35V
Power dissipation: 140W
Features of semiconductor devices: fast switching
Reverse recovery time: 300ns
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10+8.82 EUR
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DSEI36-06AS-TRL DSEI36-06AS-TRL IXYS littelfuse-power-semiconductors-dsei36-06as-datasheet?assetguid=e6dafff2-758c-449a-9042-56d94bd941ff Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 50ns; D2PAK,TO263AB; Ufmax: 1.6V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 1.6V
Max. forward impulse current: 0.3kA
Technology: FRED
Kind of package: reel; tape
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DSEI36-06AS-TUB IXYS DSEI36-06AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 37A; 35ns; TO263AB; Ufmax: 1.4V; 125W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 37A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.4V
Max. forward impulse current: 0.3kA
Power dissipation: 125W
Technology: FRED
Kind of package: tube
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PM1206 PM1206 IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Mounting: THT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Max. operating current: 0.5A
Control current max.: 100mA
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IXYN75N65C3D1 IXYN75N65C3D1 IXYS IXYN75N65C3D1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Max. off-state voltage: 650V
Electrical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 360A
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IXFT150N30X3HV-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 300V; 150A; 890W; D3PAK,TO268; 167ns
Mounting: SMD
Power dissipation: 890W
Gate charge: 177nC
Technology: HiPerFET™
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: D3PAK; TO268
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
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CPC2907B CPC2907B IXYS CPC2907B.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Insulation voltage: 4kV
Turn-on time: 2.5ms
Switched voltage: max. 60V AC; max. 60V DC
Case: PowerSO8
Max. operating current: 2A
Turn-off time: 0.25ms
Control current max.: 50mA
On-state resistance: 0.15Ω
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MEA250-12DA IXYS PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double,common anode; 1.2kV; If: 260A; Y4-M6; screw
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 260A
Semiconductor structure: common anode; double
Max. forward impulse current: 2.4kA
Max. forward voltage: 1.54V
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IXFA180N10T2 IXFA180N10T2 IXYS IXFA(P)180N10T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 66ns
Features of semiconductor devices: thrench gate power mosfet
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IXFP180N10T2 IXFP180N10T2 IXYS IXFA(P)180N10T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 66ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA180N10T IXTA180N10T IXYS IXTA(P)180N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 72ns
Features of semiconductor devices: thrench gate power mosfet
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25+6.41 EUR
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IXTA80N10T IXTA80N10T IXYS IXTA(P)80N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA80N10T-TRL IXTA80N10T-TRL IXYS littelfuse-discrete-mosfets-ixtp80n10t-datasheet?assetguid=97c849e2-6910-43ce-9bda-8b33b853f553 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 80A; 230W; D2PAK,TO263; 100ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
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IXTA180N10T-TRL IXTA180N10T-TRL IXYS littelfuse-discrete-mosfets-ixt-180n10t-datasheet?assetguid=a45c8ae2-5c3f-4d3f-be24-0a3d6e97b45b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 180A; Idm: 180A; 480W; D2PAK
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Pulsed drain current: 180A
Power dissipation: 480W
Case: D2PAK
Gate-source voltage: 20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 72ns
Technology: Trench
Application: automotive industry
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IXTP180N10T IXTP180N10T IXYS IXTA(P)180N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 72ns
Features of semiconductor devices: thrench gate power mosfet
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IXFA180N10T2-TRL IXFA180N10T2-TRL IXYS littelfuse-discrete-mosfets-ixf-180n10t2-datasheet?assetguid=fe756911-5a6e-4383-b388-3883df0a0b48 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; D2PAK,TO263; 66ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 66ns
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IXTA180N10T7 IXYS littelfuse-discrete-mosfets-ixta180n10t7-datasheet?assetguid=63142f38-9ba5-4484-ab78-644b1c6ee8aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 480W; TO263-7; 100ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
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IXTA180N10T7-TRL IXYS littelfuse-discrete-mosfets-ixta180n10t7-datasheet?assetguid=63142f38-9ba5-4484-ab78-644b1c6ee8aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; TO263-7; 100ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
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IXTH180N10T IXYS 9eb2cdbcabd045fc94224c3d8305fcd7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 480W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
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IXTQ180N10T IXYS PdfFile387540.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; TO3P; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
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DHG60C600HB DHG60C600HB IXYS DHG60C600HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 200A; TO247-3; tube; 180W
Max. off-state voltage: 0.6kV
Load current: 30A x2
Max. forward impulse current: 200A
Max. forward voltage: 2.21V
Case: TO247-3
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 40ns
Mounting: THT
Power dissipation: 180W
Features of semiconductor devices: fast switching
Semiconductor structure: common cathode; double
Type of diode: rectifying
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DHG60I1200HA DHG60I1200HA IXYS DHG60I1200HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; Ifsm: 500A; TO247-2; tube; 360W
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 0.5kA
Max. forward voltage: 2.34V
Case: TO247-2
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 360W
Features of semiconductor devices: fast switching
Semiconductor structure: single diode
Type of diode: rectifying
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DHG60U1200LB-TRR IXYS DHG60U1200LB.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Max. forward voltage: 3.15V
Case: SMPD-B
Kind of package: reel; tape
Technology: Sonic FRD™
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DHG60U1200LB-TUB IXYS media?resourcetype=datasheets&itemid=18f98573-a03e-4696-beb4-d5c97f0ab1a8&filename=Littelfuse-Power-Semiconductors-DHG60U1200LB-Datasheet Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Max. forward voltage: 3.15V
Case: SMPD-B
Kind of package: tube
Technology: Sonic FRD™
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IXFR44N50Q IXFR44N50Q IXYS IXFR44N50Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 313W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 313W
Case: ISOPLUS247™
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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3+29.05 EUR
4+27.11 EUR
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IXFA14N60P-TRL IXFA14N60P-TRL IXYS littelfuse-discrete-mosfets-ixf-14n60p-datasheet?assetguid=9b66dd8c-b998-4e01-b450-afadebd1db30 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 14A; 300W; D2PAK,TO263; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate charge: 36nC
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IXTY14N60X2-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; 600V; 14A; 180W; TO252/DPAK; 320ns
Type of transistor: N-MOSFET
Technology: X2-Class
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: TO252/DPAK
Gate-source voltage: 30V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 320ns
Gate charge: 16.7nC
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MCMA450UH1600TEH IXYS Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; 1.6kV; If: 450A; Ifsm: 2.4kA
Type of bridge rectifier: half-controlled
Max. forward impulse current: 2.4kA
Version: module
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: Press-in PCB
Load current: 450A
Case: E3-Pack
Produkt ist nicht verfügbar
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IXFT24N90P-TRL IXYS littelfuse-discrete-mosfets-ixf-24n90p-datasheet?assetguid=1850cbbc-4a71-4b6c-9e4b-bd580f61e590 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 900V; 24A; 660W; D3PAK,TO268; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Power dissipation: 660W
Case: D3PAK; TO268
Mounting: SMD
Gate charge: 130nC
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 900V
Gate-source voltage: 30V
On-state resistance: 0.42Ω
Reverse recovery time: 300ns
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IXSJ25N120R1 IXYS power-semiconductor-sic-mosfet-ixsj25n120r1-datasheet?assetguid=41aa58a1-83ff-4308-9387-9a356004e0b6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 25A; 75.3W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 75.3W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
On-state resistance: 62mΩ
Polarisation: N
Technology: SiC
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Gate-source voltage: -4...21V
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IXFT24N80P IXFT24N80P IXYS IXFH(K,T)24N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Mounting: SMD
Power dissipation: 650W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268
On-state resistance: 0.4Ω
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IXFA10N60P-TRL IXFA10N60P-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: 30V
On-state resistance: 0.74Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate charge: 32nC
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IXTA10N60P IXTA10N60P IXYS media?resourcetype=datasheets&itemid=2CD94402-C675-4847-A76E-45DC222A7AF8&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-10N60P-Datasheet.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK,TO263AB; 500ns
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: D2PAK; TO263AB
Gate-source voltage: 30V
On-state resistance: 0.74Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 32nC
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IXFH60N65X2W IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IXSA60N65L2-7TR IXYS power-semiconductor-sic-mosfet-ixsa60n65l2-7tr-datasheet?assetguid=13dbac17-813e-4c03-8ede-0725d4259010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 60A
Case: D2PAK-7
Gate-source voltage: -5...20V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 249W
Gate charge: 94.7nC
Technology: SiC
On-state resistance: 40Ω
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IXSG60N65L2K IXYS power-semiconductor-sic-mosfet-ixsg60n65l2k-datasheet?assetguid=fc242485-266f-41e4-ac41-70a3366d5139 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; TOLL
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 60A
Case: TOLL
Gate-source voltage: -5...20V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 249W
Gate charge: 94.7nC
Technology: SiC
On-state resistance: 40Ω
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IXSH60N65L2KHV IXYS Littlefuse_7-24-2025_Power_Semiconductor_SiC_MOSFET_IXSH60N65L2KHV_Datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; TO247-4
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-4
Gate-source voltage: -5...20V
Mounting: THT
Kind of channel: enhancement
Power dissipation: 249W
Gate charge: 94.7nC
Technology: SiC
On-state resistance: 40Ω
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IXFA12N65X2-TRL IXFA12N65X2-TRL IXYS littelfuse-discrete-mosfets-ixf-12n65x2-datasheet?assetguid=ca7fb720-7825-4c0e-b2dd-7746de20884a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 12A; 180W; D2PAK,TO263; 155ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
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IXTK600N04T2 IXTK600N04T2 IXYS IXTK(X)600N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 590nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
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IXFJ20N85X IXFJ20N85X IXYS IXFJ20N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 9.5A; Idm: 50A; 110W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 110W
Gate charge: 63nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: ISO247™
On-state resistance: 0.36Ω
Reverse recovery time: 190ns
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IXFP4N85X IXFP4N85X IXYS IXFA(P,Y)4N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: THT
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
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IXFA4N85X IXFA4N85X IXYS IXFA(P,Y)4N85X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO263
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
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IXFY4N85X IXFY4N85X IXYS IXFA(P,Y)4N85X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO252
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
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MCMA110P1200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCMA140P1200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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DSEI2X101-06P DSEI2X101-06P.pdf
DSEI2X101-06P
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; ECO-PAC 2; THT
Electrical mounting: THT
Max. forward impulse current: 1.2kA
Max. forward voltage: 1.17V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Load current: 96A x2
Max. load current: 192A
Kind of package: bulk
Semiconductor structure: double independent
Case: ECO-PAC 2
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3+33.08 EUR
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IXTK170P10P IXTK170P10P.pdf
IXTK170P10P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Drain current: -170A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 14mΩ
Reverse recovery time: 176ns
Mounting: THT
Power dissipation: 890W
Gate charge: 240nC
Polarisation: unipolar
Technology: PolarP™
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IXTK17N120L IXTK(X)17N120L.pdf
IXTK17N120L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; TO264; 1.83us
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 0.9Ω
Reverse recovery time: 1.83µs
Mounting: THT
Power dissipation: 700W
Gate charge: 155nC
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
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PLB171PTR PLB171.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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DSSK30-018A DSSK30-018A.pdf
DSSK30-018A
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 180V; 15Ax2; TO247-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 180V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.72V
Max. forward impulse current: 120A
Power dissipation: 90W
Kind of package: tube
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IXTH64N10L2 IXTA(H,P)64N10L2.pdf
IXTH64N10L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
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DHG50X650NA DFE240X600NA.pdf
DHG50X650NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 25Ax2; SOT227B; screw
Max. forward impulse current: 200A
Max. forward voltage: 2.03V
Type of semiconductor module: diode
Technology: Sonic FRD™
Mechanical mounting: screw
Max. off-state voltage: 650V
Electrical mounting: screw
Load current: 25A x2
Max. load current: 50A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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DFE250X600NA DFE250X600NA.pdf
DFE250X600NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 125Ax2; SOT227B; screw
Max. forward impulse current: 1.2kA
Type of semiconductor module: diode
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 125A x2
Max. load current: 250A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
Produkt ist nicht verfügbar
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IXTQ14N60P IXTA(P,Q)14N60P.pdf
IXTQ14N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXFP14N60P IXFA(H,P)14N60P.pdf
IXFP14N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
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IXFH14N60P IXFA(H,P)14N60P.pdf
IXFH14N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
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IXFA14N60P IXFA(H,P)14N60P.pdf
IXFA14N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
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IXTA14N60P IXTA(P,Q)14N60P.pdf
IXTA14N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO263; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXTP14N60P IXTA(P,Q)14N60P.pdf
IXTP14N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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LAA108 LAA108.pdf
LAA108
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: THT
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 8Ω
Kind of output: MOSFET
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
13+6.56 EUR
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DH20-18A DH20-18A.pdf
DH20-18A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 20A; Ifsm: 150A; TO247-2; tube; 140W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 150A
Kind of package: tube
Max. forward voltage: 2.35V
Power dissipation: 140W
Features of semiconductor devices: fast switching
Reverse recovery time: 300ns
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
9+9.98 EUR
10+8.82 EUR
11+8.04 EUR
Mindestbestellmenge: 9 Stücke
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DSEI36-06AS-TRL littelfuse-power-semiconductors-dsei36-06as-datasheet?assetguid=e6dafff2-758c-449a-9042-56d94bd941ff
DSEI36-06AS-TRL
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 50ns; D2PAK,TO263AB; Ufmax: 1.6V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 1.6V
Max. forward impulse current: 0.3kA
Technology: FRED
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DSEI36-06AS-TUB DSEI36-06AS.pdf
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 37A; 35ns; TO263AB; Ufmax: 1.4V; 125W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 37A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.4V
Max. forward impulse current: 0.3kA
Power dissipation: 125W
Technology: FRED
Kind of package: tube
Produkt ist nicht verfügbar
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PM1206 PM1206.pdf
PM1206
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Case: DIP6
Mounting: THT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Max. operating current: 0.5A
Control current max.: 100mA
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4+23.38 EUR
50+15.32 EUR
Mindestbestellmenge: 4 Stücke
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IXYN75N65C3D1 IXYN75N65C3D1.pdf
IXYN75N65C3D1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Max. off-state voltage: 650V
Electrical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 360A
Produkt ist nicht verfügbar
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IXFT150N30X3HV-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 300V; 150A; 890W; D3PAK,TO268; 167ns
Mounting: SMD
Power dissipation: 890W
Gate charge: 177nC
Technology: HiPerFET™
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: D3PAK; TO268
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
Produkt ist nicht verfügbar
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CPC2907B CPC2907B.pdf
CPC2907B
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Insulation voltage: 4kV
Turn-on time: 2.5ms
Switched voltage: max. 60V AC; max. 60V DC
Case: PowerSO8
Max. operating current: 2A
Turn-off time: 0.25ms
Control current max.: 50mA
On-state resistance: 0.15Ω
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4+24.94 EUR
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MEA250-12DA PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 1.2kV; If: 260A; Y4-M6; screw
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 260A
Semiconductor structure: common anode; double
Max. forward impulse current: 2.4kA
Max. forward voltage: 1.54V
Produkt ist nicht verfügbar
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IXFA180N10T2 IXFA(P)180N10T2.pdf
IXFA180N10T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 66ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
11+8.43 EUR
14+6.32 EUR
Mindestbestellmenge: 11 Stücke
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IXFP180N10T2 IXFA(P)180N10T2.pdf
IXFP180N10T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 66ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+8.94 EUR
11+8.02 EUR
14+6.53 EUR
50+5.87 EUR
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IXTA180N10T IXTA(P)180N10T.pdf
IXTA180N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 72ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+9.45 EUR
11+7.87 EUR
25+6.41 EUR
50+5.31 EUR
100+5.15 EUR
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IXTA80N10T IXTA(P)80N10T.pdf
IXTA80N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTA80N10T-TRL littelfuse-discrete-mosfets-ixtp80n10t-datasheet?assetguid=97c849e2-6910-43ce-9bda-8b33b853f553
IXTA80N10T-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 80A; 230W; D2PAK,TO263; 100ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
Produkt ist nicht verfügbar
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IXTA180N10T-TRL littelfuse-discrete-mosfets-ixt-180n10t-datasheet?assetguid=a45c8ae2-5c3f-4d3f-be24-0a3d6e97b45b
IXTA180N10T-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 180A; Idm: 180A; 480W; D2PAK
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Pulsed drain current: 180A
Power dissipation: 480W
Case: D2PAK
Gate-source voltage: 20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 72ns
Technology: Trench
Application: automotive industry
Produkt ist nicht verfügbar
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IXTP180N10T IXTA(P)180N10T.pdf
IXTP180N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 72ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXFA180N10T2-TRL littelfuse-discrete-mosfets-ixf-180n10t2-datasheet?assetguid=fe756911-5a6e-4383-b388-3883df0a0b48
IXFA180N10T2-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; D2PAK,TO263; 66ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 66ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IXTA180N10T7 littelfuse-discrete-mosfets-ixta180n10t7-datasheet?assetguid=63142f38-9ba5-4484-ab78-644b1c6ee8aa
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 480W; TO263-7; 100ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXTA180N10T7-TRL littelfuse-discrete-mosfets-ixta180n10t7-datasheet?assetguid=63142f38-9ba5-4484-ab78-644b1c6ee8aa
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; TO263-7; 100ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
Produkt ist nicht verfügbar
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IXTH180N10T 9eb2cdbcabd045fc94224c3d8305fcd7.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 480W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
Produkt ist nicht verfügbar
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IXTQ180N10T PdfFile387540.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; TO3P; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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DHG60C600HB DHG60C600HB.pdf
DHG60C600HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 200A; TO247-3; tube; 180W
Max. off-state voltage: 0.6kV
Load current: 30A x2
Max. forward impulse current: 200A
Max. forward voltage: 2.21V
Case: TO247-3
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 40ns
Mounting: THT
Power dissipation: 180W
Features of semiconductor devices: fast switching
Semiconductor structure: common cathode; double
Type of diode: rectifying
Produkt ist nicht verfügbar
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DHG60I1200HA DHG60I1200HA.pdf
DHG60I1200HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; Ifsm: 500A; TO247-2; tube; 360W
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 0.5kA
Max. forward voltage: 2.34V
Case: TO247-2
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 360W
Features of semiconductor devices: fast switching
Semiconductor structure: single diode
Type of diode: rectifying
Produkt ist nicht verfügbar
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DHG60U1200LB-TRR DHG60U1200LB.pdf
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Max. forward voltage: 3.15V
Case: SMPD-B
Kind of package: reel; tape
Technology: Sonic FRD™
Produkt ist nicht verfügbar
Mindestbestellmenge: 200 Stücke
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DHG60U1200LB-TUB media?resourcetype=datasheets&itemid=18f98573-a03e-4696-beb4-d5c97f0ab1a8&filename=Littelfuse-Power-Semiconductors-DHG60U1200LB-Datasheet
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Max. forward voltage: 3.15V
Case: SMPD-B
Kind of package: tube
Technology: Sonic FRD™
Produkt ist nicht verfügbar
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IXFR44N50Q IXFR44N50Q.pdf
IXFR44N50Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 313W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 313W
Case: ISOPLUS247™
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 93 Stücke:
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3+29.05 EUR
4+27.11 EUR
10+25.25 EUR
Mindestbestellmenge: 3 Stücke
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IXFA14N60P-TRL littelfuse-discrete-mosfets-ixf-14n60p-datasheet?assetguid=9b66dd8c-b998-4e01-b450-afadebd1db30
IXFA14N60P-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 14A; 300W; D2PAK,TO263; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate charge: 36nC
Produkt ist nicht verfügbar
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IXTY14N60X2-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; 600V; 14A; 180W; TO252/DPAK; 320ns
Type of transistor: N-MOSFET
Technology: X2-Class
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: TO252/DPAK
Gate-source voltage: 30V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 320ns
Gate charge: 16.7nC
Produkt ist nicht verfügbar
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MCMA450UH1600TEH
Hersteller: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; 1.6kV; If: 450A; Ifsm: 2.4kA
Type of bridge rectifier: half-controlled
Max. forward impulse current: 2.4kA
Version: module
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: Press-in PCB
Load current: 450A
Case: E3-Pack
Produkt ist nicht verfügbar
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IXFT24N90P-TRL littelfuse-discrete-mosfets-ixf-24n90p-datasheet?assetguid=1850cbbc-4a71-4b6c-9e4b-bd580f61e590
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 900V; 24A; 660W; D3PAK,TO268; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Power dissipation: 660W
Case: D3PAK; TO268
Mounting: SMD
Gate charge: 130nC
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 900V
Gate-source voltage: 30V
On-state resistance: 0.42Ω
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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IXSJ25N120R1 power-semiconductor-sic-mosfet-ixsj25n120r1-datasheet?assetguid=41aa58a1-83ff-4308-9387-9a356004e0b6
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 25A; 75.3W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 75.3W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
On-state resistance: 62mΩ
Polarisation: N
Technology: SiC
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Gate-source voltage: -4...21V
Produkt ist nicht verfügbar
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IXFT24N80P IXFH(K,T)24N80P.pdf
IXFT24N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Mounting: SMD
Power dissipation: 650W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268
On-state resistance: 0.4Ω
Produkt ist nicht verfügbar
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IXFA10N60P-TRL
IXFA10N60P-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: 30V
On-state resistance: 0.74Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate charge: 32nC
Produkt ist nicht verfügbar
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IXTA10N60P media?resourcetype=datasheets&itemid=2CD94402-C675-4847-A76E-45DC222A7AF8&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-10N60P-Datasheet.PDF
IXTA10N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10A; 200W; D2PAK,TO263AB; 500ns
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: D2PAK; TO263AB
Gate-source voltage: 30V
On-state resistance: 0.74Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 32nC
Produkt ist nicht verfügbar
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IXFH60N65X2W
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXSA60N65L2-7TR power-semiconductor-sic-mosfet-ixsa60n65l2-7tr-datasheet?assetguid=13dbac17-813e-4c03-8ede-0725d4259010
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 60A
Case: D2PAK-7
Gate-source voltage: -5...20V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 249W
Gate charge: 94.7nC
Technology: SiC
On-state resistance: 40Ω
Produkt ist nicht verfügbar
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IXSG60N65L2K power-semiconductor-sic-mosfet-ixsg60n65l2k-datasheet?assetguid=fc242485-266f-41e4-ac41-70a3366d5139
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; TOLL
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 60A
Case: TOLL
Gate-source voltage: -5...20V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 249W
Gate charge: 94.7nC
Technology: SiC
On-state resistance: 40Ω
Produkt ist nicht verfügbar
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IXSH60N65L2KHV Littlefuse_7-24-2025_Power_Semiconductor_SiC_MOSFET_IXSH60N65L2KHV_Datasheet.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; TO247-4
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-4
Gate-source voltage: -5...20V
Mounting: THT
Kind of channel: enhancement
Power dissipation: 249W
Gate charge: 94.7nC
Technology: SiC
On-state resistance: 40Ω
Produkt ist nicht verfügbar
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IXFA12N65X2-TRL littelfuse-discrete-mosfets-ixf-12n65x2-datasheet?assetguid=ca7fb720-7825-4c0e-b2dd-7746de20884a
IXFA12N65X2-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 12A; 180W; D2PAK,TO263; 155ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Produkt ist nicht verfügbar
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IXTK600N04T2 IXTK(X)600N04T2.pdf
IXTK600N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 590nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
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IXFJ20N85X IXFJ20N85X.pdf
IXFJ20N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 9.5A; Idm: 50A; 110W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 110W
Gate charge: 63nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: ISO247™
On-state resistance: 0.36Ω
Reverse recovery time: 190ns
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5+17.02 EUR
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IXFP4N85X IXFA(P,Y)4N85X.pdf
IXFP4N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: THT
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
auf Bestellung 267 Stücke:
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13+6.85 EUR
50+3.65 EUR
100+3.32 EUR
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IXFA4N85X IXFA(P,Y)4N85X.pdf
IXFA4N85X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO263
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
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18+4.95 EUR
50+2.64 EUR
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IXFY4N85X IXFA(P,Y)4N85X.pdf
IXFY4N85X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO252
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6+14.17 EUR
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