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DSEC16-12AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4F5F44C2260C4&compId=DSEC16-12AS.pdf?ci_sign=7fe88d45cfa69a339b55e2fa6635825aa1a7704b Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Mounting: SMD
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 1.96V
Max. off-state voltage: 1.2kV
Load current: 8A x2
Max. forward impulse current: 40A
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: D2PAK
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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IXTQ120N20P IXTQ120N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9109183E093E27&compId=IXTK120N20P-DTE.pdf?ci_sign=8d92652847182241575b90496cedc624b85642c3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Gate-source voltage: ±20V
Power dissipation: 714W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
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PLB190 PLB190 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
auf Bestellung 240 Stücke:
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12+6.38 EUR
13+5.53 EUR
50+4.76 EUR
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PLB190S PLB190S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
auf Bestellung 12 Stücke:
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12+6.35 EUR
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PLB190STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
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IXTQ34N65X2M IXTQ34N65X2M IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtq34n65x2m_datasheet.pdf?assetguid=9e2804bf-85d4-45e2-ba6f-de4ee48d3cec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.71 EUR
8+9.62 EUR
10+8.51 EUR
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IXTQ48N65X2M IXTQ48N65X2M IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 15 Stücke:
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6+13.08 EUR
7+11.8 EUR
10+10.42 EUR
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IXFP60N25X3 IXFP60N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48077B3DDB820&compId=IXFA(P%2CQ)60N25X3.pdf?ci_sign=40bf31d6f48e6a29413d60f94152aaab04d45448 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.44 EUR
9+8.79 EUR
10+7.78 EUR
50+6.55 EUR
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IXTH32N65X IXTH32N65X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC14A9F2EB3820&compId=IXTH(P%2CQ)32N65X.pdf?ci_sign=6a88174097b72279f3942c45d4c91b42e2da5718 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.45 EUR
10+7.61 EUR
11+6.72 EUR
30+6.03 EUR
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IXFN240N15T2 IXFN240N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF632B0BFD4D820&compId=IXFN240N15T2.pdf?ci_sign=ff1aa251ad84ebead4a899a8d1f4d4e5b551871d Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 460nC
Kind of channel: enhancement
auf Bestellung 1 Stücke:
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1+71.5 EUR
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DSS25-0025B DSS25-0025B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAD2C325DCD8BF&compId=DSS25-0025B.pdf?ci_sign=f6f65f217afdcd493a817c25caa07db6fbf77538 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 330A
Kind of package: tube
Power dissipation: 90W
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IXFN36N100 IXFN36N100 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA766581850B820&compId=IXFN36N100.pdf?ci_sign=ed624506c3a3f62202f258b7df94949020d4b004 description Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 36A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.24Ω
Pulsed drain current: 144A
Power dissipation: 694W
Technology: HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 180ns
Gate charge: 380nC
Kind of channel: enhancement
auf Bestellung 18 Stücke:
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1+109.11 EUR
3+96.4 EUR
10+86.57 EUR
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CPC1973Y CPC1973Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8AE80C7&compId=CPC1973.pdf?ci_sign=91729805be6023b15ac75007105dc829532fec53 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Case: SIP4
On-state resistance: 5Ω
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Max. operating current: 0.35mA
Turn-off time: 3ms
Turn-on time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Switched voltage: max. 400V AC
Insulation voltage: 2.5kV
Relay variant: 1-phase
Manufacturer series: OptoMOS
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.95 EUR
14+5.22 EUR
25+4.75 EUR
Mindestbestellmenge: 13
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IXFB82N60Q3 IXFB82N60Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4881A0D0D8A18&compId=IXFB82N60Q3.pdf?ci_sign=45d0b854272d2bfbbaa194f4db1d7265f64eef15 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
auf Bestellung 19 Stücke:
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5+15.96 EUR
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IXTP15P15T IXTP15P15T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0315E91ECF8BF&compId=IXT_15P15T.pdf?ci_sign=89c9e7e0f50fcdf0bdf9b8cab3248220932eecac Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Gate charge: 48nC
Reverse recovery time: 116ns
auf Bestellung 182 Stücke:
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15+4.82 EUR
17+4.42 EUR
50+3.56 EUR
100+3.13 EUR
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CPC1218Y CPC1218Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF21340C7&compId=CPC1218.pdf?ci_sign=9c98dc3d6e8c890d0b45503495283d4f4da9397b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 5÷12VDC; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 5...12V DC
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1.1Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Kind of output: MOSFET
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.22 EUR
13+5.68 EUR
25+5.11 EUR
50+4.68 EUR
100+4.26 EUR
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CPC1393G CPC1393G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 4.57x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
auf Bestellung 221 Stücke:
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29+2.53 EUR
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CPC1393GV CPC1393GV IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 4.57x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
auf Bestellung 500 Stücke:
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19+3.85 EUR
100+2.52 EUR
500+2.03 EUR
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CMA50P1600FC CMA50P1600FC IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF097A4C94098BF&compId=CMA50P1600FC.pdf?ci_sign=b72ced94642464a929aa6ab7e507a6825f1b9885 Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80/200mA; THT; tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 80/200mA
Load current: 50A
Max. load current: 79A
Max. forward impulse current: 610A
Max. off-state voltage: 1.6kV
Kind of package: tube
Semiconductor structure: double series
Case: ISOPLUS i4-pac™ x024a
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DMA50P1200HB DMA50P1200HB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-3
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.28 EUR
11+6.55 EUR
13+5.79 EUR
30+5.31 EUR
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DMA50P1200HR DMA50P1200HR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB45968090540C4&compId=DMA50P1200HR.pdf?ci_sign=a806f1fbc18861dcff822bd89a4281ead6ff11bb Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 555A; ISO247™; 210W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Kind of package: tube
Max. forward impulse current: 555A
Case: ISO247™
Max. forward voltage: 1.28V
Power dissipation: 210W
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.13 EUR
7+11.83 EUR
10+10.45 EUR
30+9.58 EUR
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DMA50P1600HB DMA50P1600HB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-3
Mounting: THT
Type of diode: rectifying
Load current: 50A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.6kV
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
Produkt ist nicht verfügbar
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LDA111 LDA111 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 30V
Case: DIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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LDA111S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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LDA111STR LDA111STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 30V; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
Collector-emitter voltage: 30V
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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IXFN66N85X IXFN66N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA70A95430AF820&compId=IXFN66N85X.pdf?ci_sign=2d203018ce9c13744ae92c3349badbac31ecd4da Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 230nC
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
2+57.13 EUR
3+50.46 EUR
Mindestbestellmenge: 2
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PLA140L PLA140L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98E60C7&compId=PLA140L.pdf?ci_sign=e9ab2af998e9385483102ff11a793c893e887522 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 77 Stücke:
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18+4.15 EUR
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CMA30E1600PB CMA30E1600PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF07E7D1C4758BF&compId=CMA30E1600PB.pdf?ci_sign=93aaff634305ba81457d0cfdba5f3a374fb2216d Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO220AB; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO220AB
Gate current: 28/50mA
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 220A
Max. off-state voltage: 1.6kV
Kind of package: tube
auf Bestellung 69 Stücke:
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28+2.62 EUR
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50+2.4 EUR
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IXFP26N65X2 IXFP26N65X2 IXYS 238_K248734.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.01 EUR
10+8.34 EUR
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IXFN40N110P IXFN40N110P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA812D6D7BDF820&compId=IXFN40N110P.pdf?ci_sign=6226376dd3ad6996a210b08f7f2500c2f3b3461c Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 34A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 310nC
Kind of channel: enhancement
auf Bestellung 1 Stücke:
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IXFN40N110Q3 IXFN40N110Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA817BC850F1820&compId=IXFN40N110Q3.pdf?ci_sign=2c2fccbdd7e7ae4e20d8d950b06dc1a068f013a8 Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 35A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 434ns
Gate charge: 300nC
Kind of channel: enhancement
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2+35.75 EUR
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MCD95-16IO1B MCD95-16IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D70923CA158A50&compId=MCD95-16IO1B-DTE.pdf?ci_sign=2b68c24bb34f43ba3ab2eb5cec3b22c657190eaa pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Max. off-state voltage: 1.6kV
Load current: 116A
Max. forward impulse current: 2.25kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.28V
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. load current: 180A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
auf Bestellung 30 Stücke:
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2+43.27 EUR
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CPC1540G CPC1540G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D740C7&compId=CPC1540.pdf?ci_sign=5f1209c6b4ad2777cac01c5c99b40e7fe82056f9 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
auf Bestellung 965 Stücke:
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15+4.78 EUR
50+3.13 EUR
500+2.5 EUR
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CPC2317N CPC2317N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891960C7&compId=CPC2317N.pdf?ci_sign=29adb11cf05dc8881e900756a93efa2a5d0cc008 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 16Ω
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Case: SO8
Kind of output: MOSFET
auf Bestellung 577 Stücke:
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34+2.16 EUR
36+2 EUR
38+1.9 EUR
50+1.8 EUR
100+1.72 EUR
150+1.7 EUR
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IXTP34N65X2 IXTP34N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99396442E3226F8BF&compId=IXT_34N65X2.pdf?ci_sign=0ea056e8008ffbda4aac0eaac650eb7fba1e7e65 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
Produkt ist nicht verfügbar
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IXFN60N80P IXFN60N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F24B9F9CDFB820&compId=IXFN60N80P.pdf?ci_sign=559fd8e3a46ccaf185911c21319f68de98543251 description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 53A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.14Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 250nC
Kind of channel: enhancement
auf Bestellung 195 Stücke:
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2+45.62 EUR
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IXFH12N100P IXFH12N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECD690369AF8BF&compId=IXFH12N100P.pdf?ci_sign=8751df66a55edb8599692f6d06c233eb891e3c87 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 266 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.1 EUR
9+8.28 EUR
10+7.84 EUR
30+7.54 EUR
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IXFX300N20X3 IXFX300N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB1B71634818BF&compId=IXF_300N20X3.pdf?ci_sign=d7ceaf98ba04f28d6cca73c11a6a109100fa462b pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Gate-source voltage: ±20V
Drain current: 300A
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 170ns
On-state resistance: 4mΩ
Power dissipation: 1.25kW
Type of transistor: N-MOSFET
auf Bestellung 21 Stücke:
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3+34.41 EUR
10+31.4 EUR
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IXTH11P50 IXTH11P50 IXYS pVersion=0046&contRep=ZT&docId=E29204E7FB2FFDF19A99005056AB752F&compId=DS94535L(IXTH-T11P50).pdf?ci_sign=75e2ecd6057bd9959b8b067840c0bc20763188af Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Gate charge: 145nC
Reverse recovery time: 0.5µs
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 300W
auf Bestellung 295 Stücke:
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6+12.36 EUR
10+10.47 EUR
30+10.05 EUR
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MCD312-16io1 MCD312-16io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4DA694FFC2469&compId=MCC312-12IO1.pdf?ci_sign=3f968db46db8a1b8ba38583aacd1605eca7d74da Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Produkt ist nicht verfügbar
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IXFT24N80P IXFT24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTP100N04T2 IXTP100N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E1F1BA8D9820&compId=IXTA(P)100N04T2.pdf?ci_sign=6a88636d3dd1a68af7406b8bccbef80c68bda003 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 34ns
On-state resistance: 7mΩ
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
auf Bestellung 267 Stücke:
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24+3.02 EUR
38+1.89 EUR
50+1.66 EUR
100+1.6 EUR
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NCD2400MTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB1E7FD5DAAB860C7&compId=NCD2400M.pdf?ci_sign=302289e6c19ab2fb5c5049a324b7c154f34eb477 Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Type of integrated circuit: digital capacitor
Interface: 2-wire; I2C
Kind of memory: EEPROM; non-volatile
Case: DFN6
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.5...5.5V
Application: for OCXO application
Capacitance: 1.7...203pF
Number of positions: 512
Integrated circuit features: programmable
Produkt ist nicht verfügbar
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IXTY2N65X2 IXTY2N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89C4F8CE3158BF&compId=IXTP(Y)2N65X2.pdf?ci_sign=a1b44b73e461987c86a1219b0eef051f39a61060 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
Produkt ist nicht verfügbar
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IXFH26N60P IXFH26N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED783F9DF33DFBB2259&compId=IXFH26N60P.pdf?ci_sign=9bba2217361a08c9c0640ecbde1a01f412fcd492 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 259 Stücke:
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8+10.2 EUR
9+8.71 EUR
10+7.38 EUR
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IXDD609SIA IXDD609SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 111 Stücke:
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39+1.86 EUR
53+1.37 EUR
55+1.32 EUR
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IXDD604SIA IXDD604SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
auf Bestellung 732 Stücke:
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37+1.96 EUR
43+1.69 EUR
50+1.44 EUR
55+1.3 EUR
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CPC1117NTR CPC1117NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20A20C7&compId=CPC1117N.pdf?ci_sign=18d490086b78a6320fb704976e77bbb11aadfa34 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXDD604SIATR IXDD604SIATR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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IXFK64N60P3 IXFK64N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB0ABA0A0DD8BF&compId=IXF_64N60P3.pdf?ci_sign=a8ce04ebb208e064f869f0d2ea995cec98534685 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
auf Bestellung 291 Stücke:
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5+15.04 EUR
10+13.69 EUR
25+12.87 EUR
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MIXG300PF1700TSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 315A
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXTQ64N25P IXTQ64N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CE00FFAAFE27&compId=IXTQ64N25P-DTE.pdf?ci_sign=8629d9d38dc4d997f8392b5cabb1618306ba9fab Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO3P
Mounting: THT
Power dissipation: 400W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: PolarHT™
Case: TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 200ns
On-state resistance: 49mΩ
Drain current: 64A
Produkt ist nicht verfügbar
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IXKK85N60C IXKK85N60C IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC765820&compId=IXKK85N60C.pdf?ci_sign=45f48f1ec514485461df7d7e3f166714c6045391 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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IXTA120P065T IXTA120P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO263
Technology: TrenchP™
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.86 EUR
13+5.68 EUR
50+4.69 EUR
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DMA150E1600NA DMA150E1600NA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA59E3F493F0F00D6&compId=DMA150E1600NA.pdf?ci_sign=61a9de61d149c9bbbbdac5a942f6e82898210d29 Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 150A; SOT227B; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Load current: 150A
Case: SOT227B
Max. forward voltage: 1.05V
Max. forward impulse current: 3kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
2+38.21 EUR
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IXFK44N50P IXFK44N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0758E5260469&compId=IXFK44N50P.pdf?ci_sign=d640f1f4194f9dc2e366fdcc55cc57269a9c0090 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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VHF25-08IO7 VHF25-08IO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1944179591820&compId=VHF25-ser.pdf?ci_sign=b45349266645b088e679b0569fcbdcd6528c9f31 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 32A
Max. forward impulse current: 180A
Gate current: 25/50mA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.79 EUR
5+16.6 EUR
10+14.93 EUR
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MDA72-16N1B MDA72-16N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double,common anode; 1.6kV; If: 113Ax2; TO240AA
Max. forward impulse current: 1.54kA
Semiconductor structure: common anode; double
Case: TO240AA
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.6V
Load current: 113A x2
Type of semiconductor module: diode
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
2+45.8 EUR
3+40.53 EUR
10+36.36 EUR
Mindestbestellmenge: 2
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IXBH20N300 IXBH20N300 IXYS littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 64ns
Gate charge: 105nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Power dissipation: 250W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
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DPF240X400NA DPF240X400NA IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA92966DC56E4A20C4&compId=DPF240X400NA.pdf?ci_sign=6fc4d0c4dfe81c07d0f6501815c460a2ef5b3645 Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Max. forward voltage: 1.06V
Max. load current: 120A
Load current: 120A x2
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.2kA
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
2+49.68 EUR
3+47.88 EUR
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DSEC16-12AS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4F5F44C2260C4&compId=DSEC16-12AS.pdf?ci_sign=7fe88d45cfa69a339b55e2fa6635825aa1a7704b
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Mounting: SMD
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 1.96V
Max. off-state voltage: 1.2kV
Load current: 8A x2
Max. forward impulse current: 40A
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: D2PAK
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
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IXTQ120N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9109183E093E27&compId=IXTK120N20P-DTE.pdf?ci_sign=8d92652847182241575b90496cedc624b85642c3
IXTQ120N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Gate-source voltage: ±20V
Power dissipation: 714W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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PLB190 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78
PLB190
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.38 EUR
13+5.53 EUR
50+4.76 EUR
Mindestbestellmenge: 12
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PLB190S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78
PLB190S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.35 EUR
Mindestbestellmenge: 12
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PLB190STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXTQ34N65X2M littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtq34n65x2m_datasheet.pdf?assetguid=9e2804bf-85d4-45e2-ba6f-de4ee48d3cec
IXTQ34N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.71 EUR
8+9.62 EUR
10+8.51 EUR
Mindestbestellmenge: 7
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IXTQ48N65X2M
IXTQ48N65X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.08 EUR
7+11.8 EUR
10+10.42 EUR
Mindestbestellmenge: 6
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IXFP60N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48077B3DDB820&compId=IXFA(P%2CQ)60N25X3.pdf?ci_sign=40bf31d6f48e6a29413d60f94152aaab04d45448
IXFP60N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.44 EUR
9+8.79 EUR
10+7.78 EUR
50+6.55 EUR
Mindestbestellmenge: 8
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IXTH32N65X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC14A9F2EB3820&compId=IXTH(P%2CQ)32N65X.pdf?ci_sign=6a88174097b72279f3942c45d4c91b42e2da5718
IXTH32N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.45 EUR
10+7.61 EUR
11+6.72 EUR
30+6.03 EUR
Mindestbestellmenge: 9
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IXFN240N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF632B0BFD4D820&compId=IXFN240N15T2.pdf?ci_sign=ff1aa251ad84ebead4a899a8d1f4d4e5b551871d
IXFN240N15T2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 460nC
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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DSS25-0025B pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAD2C325DCD8BF&compId=DSS25-0025B.pdf?ci_sign=f6f65f217afdcd493a817c25caa07db6fbf77538
DSS25-0025B
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 330A
Kind of package: tube
Power dissipation: 90W
Produkt ist nicht verfügbar
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IXFN36N100 description pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA766581850B820&compId=IXFN36N100.pdf?ci_sign=ed624506c3a3f62202f258b7df94949020d4b004
IXFN36N100
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 36A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.24Ω
Pulsed drain current: 144A
Power dissipation: 694W
Technology: HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 180ns
Gate charge: 380nC
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+109.11 EUR
3+96.4 EUR
10+86.57 EUR
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CPC1973Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8AE80C7&compId=CPC1973.pdf?ci_sign=91729805be6023b15ac75007105dc829532fec53
CPC1973Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Case: SIP4
On-state resistance: 5Ω
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Max. operating current: 0.35mA
Turn-off time: 3ms
Turn-on time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Switched voltage: max. 400V AC
Insulation voltage: 2.5kV
Relay variant: 1-phase
Manufacturer series: OptoMOS
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.95 EUR
14+5.22 EUR
25+4.75 EUR
Mindestbestellmenge: 13
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IXFB82N60Q3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED4881A0D0D8A18&compId=IXFB82N60Q3.pdf?ci_sign=45d0b854272d2bfbbaa194f4db1d7265f64eef15
IXFB82N60Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.96 EUR
Mindestbestellmenge: 5
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IXTP15P15T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0315E91ECF8BF&compId=IXT_15P15T.pdf?ci_sign=89c9e7e0f50fcdf0bdf9b8cab3248220932eecac
IXTP15P15T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Gate charge: 48nC
Reverse recovery time: 116ns
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.82 EUR
17+4.42 EUR
50+3.56 EUR
100+3.13 EUR
Mindestbestellmenge: 15
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CPC1218Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF21340C7&compId=CPC1218.pdf?ci_sign=9c98dc3d6e8c890d0b45503495283d4f4da9397b
CPC1218Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 5÷12VDC; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 5...12V DC
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1.1Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Kind of output: MOSFET
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.22 EUR
13+5.68 EUR
25+5.11 EUR
50+4.68 EUR
100+4.26 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
CPC1393G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640
CPC1393G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 4.57x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
auf Bestellung 221 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.53 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
CPC1393GV pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640
CPC1393GV
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 4.57x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.85 EUR
100+2.52 EUR
500+2.03 EUR
Mindestbestellmenge: 19
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CMA50P1600FC pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF097A4C94098BF&compId=CMA50P1600FC.pdf?ci_sign=b72ced94642464a929aa6ab7e507a6825f1b9885
CMA50P1600FC
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80/200mA; THT; tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 80/200mA
Load current: 50A
Max. load current: 79A
Max. forward impulse current: 610A
Max. off-state voltage: 1.6kV
Kind of package: tube
Semiconductor structure: double series
Case: ISOPLUS i4-pac™ x024a
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMA50P1200HB
DMA50P1200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-3
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.28 EUR
11+6.55 EUR
13+5.79 EUR
30+5.31 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
DMA50P1200HR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB45968090540C4&compId=DMA50P1200HR.pdf?ci_sign=a806f1fbc18861dcff822bd89a4281ead6ff11bb
DMA50P1200HR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 555A; ISO247™; 210W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Kind of package: tube
Max. forward impulse current: 555A
Case: ISO247™
Max. forward voltage: 1.28V
Power dissipation: 210W
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.13 EUR
7+11.83 EUR
10+10.45 EUR
30+9.58 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
DMA50P1600HB
DMA50P1600HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-3
Mounting: THT
Type of diode: rectifying
Load current: 50A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.6kV
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LDA111 pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea
LDA111
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 30V
Case: DIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LDA111S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LDA111STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea
LDA111STR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 30V; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
Collector-emitter voltage: 30V
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN66N85X pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA70A95430AF820&compId=IXFN66N85X.pdf?ci_sign=2d203018ce9c13744ae92c3349badbac31ecd4da
IXFN66N85X
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 230nC
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+57.13 EUR
3+50.46 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
PLA140L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98E60C7&compId=PLA140L.pdf?ci_sign=e9ab2af998e9385483102ff11a793c893e887522
PLA140L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.11 EUR
18+4.15 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
CMA30E1600PB pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF07E7D1C4758BF&compId=CMA30E1600PB.pdf?ci_sign=93aaff634305ba81457d0cfdba5f3a374fb2216d
CMA30E1600PB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO220AB; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO220AB
Gate current: 28/50mA
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 220A
Max. off-state voltage: 1.6kV
Kind of package: tube
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.73 EUR
28+2.62 EUR
29+2.47 EUR
50+2.4 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IXFP26N65X2 238_K248734.pdf
IXFP26N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.01 EUR
10+8.34 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXFN40N110P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA812D6D7BDF820&compId=IXFN40N110P.pdf?ci_sign=6226376dd3ad6996a210b08f7f2500c2f3b3461c
IXFN40N110P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 34A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 310nC
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFN40N110Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA817BC850F1820&compId=IXFN40N110Q3.pdf?ci_sign=2c2fccbdd7e7ae4e20d8d950b06dc1a068f013a8
IXFN40N110Q3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 35A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 434ns
Gate charge: 300nC
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MCD95-16IO1B pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D70923CA158A50&compId=MCD95-16IO1B-DTE.pdf?ci_sign=2b68c24bb34f43ba3ab2eb5cec3b22c657190eaa pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCD95-16IO1B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Max. off-state voltage: 1.6kV
Load current: 116A
Max. forward impulse current: 2.25kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.28V
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. load current: 180A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+43.27 EUR
Mindestbestellmenge: 2
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CPC1540G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D740C7&compId=CPC1540.pdf?ci_sign=5f1209c6b4ad2777cac01c5c99b40e7fe82056f9
CPC1540G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
auf Bestellung 965 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.78 EUR
50+3.13 EUR
500+2.5 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
CPC2317N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891960C7&compId=CPC2317N.pdf?ci_sign=29adb11cf05dc8881e900756a93efa2a5d0cc008
CPC2317N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 16Ω
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Case: SO8
Kind of output: MOSFET
auf Bestellung 577 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.16 EUR
36+2 EUR
38+1.9 EUR
50+1.8 EUR
100+1.72 EUR
150+1.7 EUR
Mindestbestellmenge: 34
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IXTP34N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE99396442E3226F8BF&compId=IXT_34N65X2.pdf?ci_sign=0ea056e8008ffbda4aac0eaac650eb7fba1e7e65
IXTP34N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN60N80P description pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F24B9F9CDFB820&compId=IXFN60N80P.pdf?ci_sign=559fd8e3a46ccaf185911c21319f68de98543251
IXFN60N80P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 53A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.14Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 250nC
Kind of channel: enhancement
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+45.62 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFH12N100P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECD690369AF8BF&compId=IXFH12N100P.pdf?ci_sign=8751df66a55edb8599692f6d06c233eb891e3c87
IXFH12N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 266 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.1 EUR
9+8.28 EUR
10+7.84 EUR
30+7.54 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFX300N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB1B71634818BF&compId=IXF_300N20X3.pdf?ci_sign=d7ceaf98ba04f28d6cca73c11a6a109100fa462b pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFX300N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Gate-source voltage: ±20V
Drain current: 300A
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 170ns
On-state resistance: 4mΩ
Power dissipation: 1.25kW
Type of transistor: N-MOSFET
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+34.41 EUR
10+31.4 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXTH11P50 pVersion=0046&contRep=ZT&docId=E29204E7FB2FFDF19A99005056AB752F&compId=DS94535L(IXTH-T11P50).pdf?ci_sign=75e2ecd6057bd9959b8b067840c0bc20763188af
IXTH11P50
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Gate charge: 145nC
Reverse recovery time: 0.5µs
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 300W
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.36 EUR
10+10.47 EUR
30+10.05 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
MCD312-16io1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4DA694FFC2469&compId=MCC312-12IO1.pdf?ci_sign=3f968db46db8a1b8ba38583aacd1605eca7d74da
MCD312-16io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Produkt ist nicht verfügbar
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IXFT24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91
IXFT24N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTP100N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E1F1BA8D9820&compId=IXTA(P)100N04T2.pdf?ci_sign=6a88636d3dd1a68af7406b8bccbef80c68bda003
IXTP100N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 34ns
On-state resistance: 7mΩ
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.02 EUR
38+1.89 EUR
50+1.66 EUR
100+1.6 EUR
Mindestbestellmenge: 24
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NCD2400MTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB1E7FD5DAAB860C7&compId=NCD2400M.pdf?ci_sign=302289e6c19ab2fb5c5049a324b7c154f34eb477
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Type of integrated circuit: digital capacitor
Interface: 2-wire; I2C
Kind of memory: EEPROM; non-volatile
Case: DFN6
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.5...5.5V
Application: for OCXO application
Capacitance: 1.7...203pF
Number of positions: 512
Integrated circuit features: programmable
Produkt ist nicht verfügbar
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IXTY2N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89C4F8CE3158BF&compId=IXTP(Y)2N65X2.pdf?ci_sign=a1b44b73e461987c86a1219b0eef051f39a61060
IXTY2N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
Produkt ist nicht verfügbar
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IXFH26N60P pVersion=0046&contRep=ZT&docId=005056AB752F1ED783F9DF33DFBB2259&compId=IXFH26N60P.pdf?ci_sign=9bba2217361a08c9c0640ecbde1a01f412fcd492
IXFH26N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.2 EUR
9+8.71 EUR
10+7.38 EUR
Mindestbestellmenge: 8
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IXDD609SIA pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDD609SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.86 EUR
53+1.37 EUR
55+1.32 EUR
Mindestbestellmenge: 39
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IXDD604SIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDD604SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
auf Bestellung 732 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.96 EUR
43+1.69 EUR
50+1.44 EUR
55+1.3 EUR
Mindestbestellmenge: 37
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CPC1117NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20A20C7&compId=CPC1117N.pdf?ci_sign=18d490086b78a6320fb704976e77bbb11aadfa34
CPC1117NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXDD604SIATR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
IXDD604SIATR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Produkt ist nicht verfügbar
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IXFK64N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB0ABA0A0DD8BF&compId=IXF_64N60P3.pdf?ci_sign=a8ce04ebb208e064f869f0d2ea995cec98534685
IXFK64N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.04 EUR
10+13.69 EUR
25+12.87 EUR
Mindestbestellmenge: 5
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MIXG300PF1700TSF
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 315A
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXTQ64N25P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90CE00FFAAFE27&compId=IXTQ64N25P-DTE.pdf?ci_sign=8629d9d38dc4d997f8392b5cabb1618306ba9fab
IXTQ64N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO3P
Mounting: THT
Power dissipation: 400W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: PolarHT™
Case: TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 200ns
On-state resistance: 49mΩ
Drain current: 64A
Produkt ist nicht verfügbar
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IXKK85N60C pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC765820&compId=IXKK85N60C.pdf?ci_sign=45f48f1ec514485461df7d7e3f166714c6045391
IXKK85N60C
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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IXTA120P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7
IXTA120P065T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO263
Technology: TrenchP™
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.86 EUR
13+5.68 EUR
50+4.69 EUR
Mindestbestellmenge: 11
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DMA150E1600NA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA59E3F493F0F00D6&compId=DMA150E1600NA.pdf?ci_sign=61a9de61d149c9bbbbdac5a942f6e82898210d29
DMA150E1600NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 150A; SOT227B; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Load current: 150A
Case: SOT227B
Max. forward voltage: 1.05V
Max. forward impulse current: 3kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+38.21 EUR
Mindestbestellmenge: 2
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IXFK44N50P pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0758E5260469&compId=IXFK44N50P.pdf?ci_sign=d640f1f4194f9dc2e366fdcc55cc57269a9c0090
IXFK44N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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VHF25-08IO7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1944179591820&compId=VHF25-ser.pdf?ci_sign=b45349266645b088e679b0569fcbdcd6528c9f31
VHF25-08IO7
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 32A
Max. forward impulse current: 180A
Gate current: 25/50mA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.79 EUR
5+16.6 EUR
10+14.93 EUR
Mindestbestellmenge: 4
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MDA72-16N1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MDA72-16N1B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 1.6kV; If: 113Ax2; TO240AA
Max. forward impulse current: 1.54kA
Semiconductor structure: common anode; double
Case: TO240AA
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.6V
Load current: 113A x2
Type of semiconductor module: diode
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+45.8 EUR
3+40.53 EUR
10+36.36 EUR
Mindestbestellmenge: 2
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IXBH20N300 littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc
IXBH20N300
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 64ns
Gate charge: 105nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Power dissipation: 250W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
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DPF240X400NA pVersion=0046&contRep=ZT&docId=005056AB90B41EDA92966DC56E4A20C4&compId=DPF240X400NA.pdf?ci_sign=6fc4d0c4dfe81c07d0f6501815c460a2ef5b3645
DPF240X400NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Max. forward voltage: 1.06V
Max. load current: 120A
Load current: 120A x2
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.2kA
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+49.68 EUR
3+47.88 EUR
Mindestbestellmenge: 2
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