| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXGT30N120B3D1 | IXYS |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Power dissipation: 300W Gate charge: 87nC Technology: GenX3™; PT Pulsed collector current: 150A Turn-on time: 56ns Kind of package: tube Case: TO268 Turn-off time: 471ns Gate-emitter voltage: ±20V Collector current: 30A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
 |
IXFN30N120P | IXYS |
Category: Transistor modules Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A Drain-source voltage: 1.2kV Drain current: 30A On-state resistance: 0.35Ω Pulsed drain current: 75A Type of semiconductor module: MOSFET transistor Power dissipation: 890W Gate charge: 310nC Polarisation: unipolar Technology: HiPerFET™; Polar™ Kind of channel: enhancement Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: ±40V Semiconductor structure: single transistor Case: SOT227B Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
 |
IXYA30N120A3HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 30A; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Kind of package: tube Case: D2PAK Gate-emitter voltage: ±20V Collector current: 30A Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
IXYA30N120A4HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 106A; 500W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Power dissipation: 500W Gate charge: 57nC Pulsed collector current: 184A Kind of package: tube Case: D2PAK Gate-emitter voltage: ±20V Collector current: 106A Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
IXGA30N120B3-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 60A; 300W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Power dissipation: 300W Gate charge: 87nC Pulsed collector current: 150A Kind of package: reel; tape Case: D2PAK Gate-emitter voltage: ±20V Collector current: 60A Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
 |
IXGH30N120B3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Power dissipation: 300W Gate charge: 87nC Technology: GenX3™; PT Pulsed collector current: 150A Turn-on time: 56ns Kind of package: tube Case: TO247-3 Turn-off time: 471ns Gate-emitter voltage: ±20V Collector current: 30A Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
IXYH30N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Power dissipation: 500W Gate charge: 69nC Technology: GenX3™; XPT™ Pulsed collector current: 145A Turn-on time: 71ns Kind of package: tube Case: TO247-3 Turn-off time: 296ns Gate-emitter voltage: ±20V Collector current: 30A Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
 |
IXFB30N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™ Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 30A On-state resistance: 0.35Ω Power dissipation: 1.25kW Gate charge: 310nC Polarisation: unipolar Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate-source voltage: ±30V Kind of package: tube Case: PLUS264™ Reverse recovery time: 300ns Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IXGH30N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 60A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Power dissipation: 300W Gate charge: 87nC Pulsed collector current: 150A Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±20V Collector current: 60A Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
|
|
IXGH30N120C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Power dissipation: 250W Gate charge: 80nC Technology: GenX3™; PT Pulsed collector current: 115A Turn-on time: 60ns Kind of package: tube Case: TO247-3 Turn-off time: 415ns Gate-emitter voltage: ±20V Collector current: 24A Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
 |
IXYA30N120A4HV-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 30A; 500W; TO263 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Power dissipation: 500W Kind of package: reel; tape Case: TO263 Collector current: 30A Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IXYH30N120A4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 106A; 500W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Power dissipation: 500W Gate charge: 57nC Pulsed collector current: 184A Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±20V Collector current: 106A Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| IXYH30N120B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 100A; 500W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Power dissipation: 500W Gate charge: 58nC Pulsed collector current: 174A Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±20V Collector current: 100A Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
|
|
IXYH30N120C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Power dissipation: 416W Gate charge: 69nC Technology: GenX3™; Planar; XPT™ Pulsed collector current: 133A Turn-on time: 71ns Kind of package: tube Case: TO247-3 Turn-off time: 296ns Gate-emitter voltage: ±20V Collector current: 30A Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IXYH30N120C4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 94A; 500W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Power dissipation: 500W Gate charge: 57nC Pulsed collector current: 166A Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±20V Collector current: 94A Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| IXYH30N120C4H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 55A; 500W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Power dissipation: 500W Gate charge: 57nC Pulsed collector current: 166A Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±20V Collector current: 55A Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
 |
IXYP30N120A4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 106A; 500W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Power dissipation: 500W Gate charge: 57nC Pulsed collector current: 184A Kind of package: tube Case: TO220-3 Gate-emitter voltage: ±20V Collector current: 106A Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
IXYP30N120B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1kV; 30A; TO220AB Type of transistor: IGBT Collector-emitter voltage: 1kV Kind of package: tube Case: TO220AB Gate-emitter voltage: ±20V Collector current: 30A Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
 |
IXYP30N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Power dissipation: 500W Gate charge: 69nC Technology: GenX3™; Planar; XPT™ Pulsed collector current: 145A Turn-on time: 71ns Kind of package: tube Case: TO220-3 Turn-off time: 296ns Gate-emitter voltage: ±20V Collector current: 30A Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
IXYP30N120C4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 30A; TO220AB Type of transistor: IGBT Collector-emitter voltage: 1.2kV Kind of package: tube Case: TO220AB Gate-emitter voltage: ±20V Collector current: 30A Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
IXA33IF1200HB | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Power dissipation: 250W Gate charge: 76nC Technology: Sonic FRD™; XPT™ Pulsed collector current: 75A Turn-on time: 110ns Kind of package: tube Case: TO247-3 Turn-off time: 350ns Gate-emitter voltage: ±20V Collector current: 34A Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
 |
IXDN614CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -14...14A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns |
auf Bestellung 676 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
CPC1709J | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 11000mA; max.60VDC; THT; ISOPLUS264™; OptoMOS Mounting: THT Control current max.: 100mA On-state resistance: 50mΩ Type of relay: solid state Manufacturer series: OptoMOS Relay variant: current source Kind of output: MOSFET Body dimensions: 19.91x26.16x5.03mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 20ms Switched voltage: max. 60V DC Case: ISOPLUS264™ Max. operating current: 11A Turn-off time: 5ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
CLA110MB1200NA | IXYS |
Category: Thyristor modules Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V Type of semiconductor module: thyristor Semiconductor structure: opposing Max. off-state voltage: 1.2kV Load current: 50A Case: SOT227B Max. forward voltage: 1.04V Max. forward impulse current: 935A Gate current: 40/80mA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
MCC162-16io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.25V Max. forward impulse current: 6.48kA Gate current: 150/200mA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
MCC95-12io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 116A Case: TO240AA Max. forward voltage: 1.29V Max. forward impulse current: 2.25kA Gate current: 150/200mA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
MCC26-12io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 27A Case: TO240AA Max. forward voltage: 1.64V Max. forward impulse current: 560A Gate current: 100/200mA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
DSEP29-06B | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO220AC; tube; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 250A Case: TO220AC Kind of package: tube Max. forward voltage: 2.52V Reverse recovery time: 25ns Technology: HiPerFRED™ Power dissipation: 165W Features of semiconductor devices: fast switching Heatsink thickness: 1.14...1.39mm |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
DSEP29-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO220AC; tube; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 250A Case: TO220AC Kind of package: tube Max. forward voltage: 1.26V Reverse recovery time: 35ns Technology: HiPerFRED™ Power dissipation: 165W Features of semiconductor devices: fast switching Heatsink thickness: 1.14...1.39mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
DSEP29-06AS-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: D2PAK Max. forward voltage: 1.26V Max. forward impulse current: 250A Power dissipation: 165W Technology: HiPerFRED™ Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
DSEP29-06AS-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,TO263AB; Ufmax: 1.61V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Reverse recovery time: 35ns Semiconductor structure: single diode Case: D2PAK; TO263AB Max. forward voltage: 1.61V Max. forward impulse current: 250A Technology: FRED Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
DSEP29-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220AC; tube; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 200A Case: TO220AC Kind of package: tube Max. forward voltage: 1.81V Reverse recovery time: 40ns Technology: HiPerFRED™ Power dissipation: 165W Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| DSEP29-12B | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220-2; tube; 140ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 200A Case: TO220-2 Kind of package: tube Max. forward voltage: 3.76V Reverse recovery time: 140ns Technology: FRED |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
 |
IXDI609SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
IXDI609SIA | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 805 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
IXDI609SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IXDI609SITR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| VUO82-16NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 90A Max. forward impulse current: 750A Electrical mounting: screw Version: module Max. forward voltage: 0.78V Leads: M5 screws Case: PWS-D Mechanical mounting: screw |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
 |
IXDN630YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -30...30A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 12.5...35V Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns |
auf Bestellung 114 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
LOC110P | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV Case: Flatpack 8pin Trigger current: 1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| LOC110PTR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV Case: Flatpack 8pin Trigger current: 1A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
 |
LOC110STR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Trigger current: 1A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IXFH80N65X2W | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
 |
PM1205S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase Case: DIP6 Mounting: SMT Type of relay: solid state Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 500V AC Max. operating current: 0.5A Control current max.: 100mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| PM1205STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase Case: DIP6 Mounting: SMT Type of relay: solid state Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 500V AC Max. operating current: 0.5A Control current max.: 100mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
 |
PM1206S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase Operating temperature: -40...85°C Mounting: SMT Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 600V AC Case: DIP6 Max. operating current: 0.5A Control current max.: 100mA Type of relay: solid state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| PM1206STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase Operating temperature: -40...85°C Mounting: SMT Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 600V AC Case: DIP6 Max. operating current: 0.5A Control current max.: 100mA Type of relay: solid state |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
|
|
IXGH10N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3 Collector-emitter voltage: 1.7kV Power dissipation: 140W Gate charge: 29nC Technology: NPT Features of semiconductor devices: high voltage Pulsed collector current: 20A Type of transistor: IGBT Turn-on time: 107ns Kind of package: tube Case: TO247-3 Turn-off time: 240ns Gate-emitter voltage: ±20V Collector current: 5A Mounting: THT |
auf Bestellung 278 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
IXGH10N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3 Collector-emitter voltage: 1.7kV Power dissipation: 110W Gate charge: 32nC Technology: NPT Features of semiconductor devices: high voltage Pulsed collector current: 70A Type of transistor: IGBT Turn-on time: 0.3µs Kind of package: tube Case: TO247-3 Turn-off time: 630ns Gate-emitter voltage: ±20V Collector current: 10A Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
 |
IXFR20N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 13A Power dissipation: 290W Case: ISOPLUS247™ On-state resistance: 0.63Ω Mounting: THT Gate charge: 193nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
IXFX20N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Power dissipation: 780W Case: PLUS247™ Gate-source voltage: ±30V On-state resistance: 570mΩ Mounting: THT Gate charge: 193nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
IXFK20N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Power dissipation: 780W Case: TO264 On-state resistance: 570mΩ Mounting: THT Gate charge: 193nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IXSA20N120L2-7TR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; D2PAK-7 Type of transistor: N-MOSFET Technology: SiC Polarisation: N Drain-source voltage: 1.2kV Drain current: 20A Power dissipation: 136W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 160Ω Mounting: SMD Gate charge: 29nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| IXSH20N120L2KHV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; TO247-4; 30ns Type of transistor: N-MOSFET Technology: SiC Polarisation: N Drain-source voltage: 1.2kV Drain current: 20A Power dissipation: 136W Case: TO247-4 Gate-source voltage: -5...20V On-state resistance: 160Ω Mounting: THT Gate charge: 29nC Kind of channel: enhancement Reverse recovery time: 30ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
 |
IXFA26N30X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263 Power dissipation: 170W Gate charge: 22nC Polarisation: unipolar Technology: HiPerFET™; X3-Class Drain current: 26A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO263 On-state resistance: 66mΩ Reverse recovery time: 105ns Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
DSA20C100PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.71V Mounting: THT Case: TO220AB Max. off-state voltage: 0.1kV Heatsink thickness: 1.14...1.39mm Load current: 10A x2 Kind of package: tube Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Max. forward impulse current: 0.24kA Max. forward voltage: 0.71V Power dissipation: 65W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
IXFH90N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: THT Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 85ns Polarisation: unipolar Kind of package: tube |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
IXFA90N20X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO263 Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: SMD Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 85ns Polarisation: unipolar Kind of package: tube |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
IXFP90N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: THT Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 85ns Polarisation: unipolar Kind of package: tube |
auf Bestellung 293 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
IXFQ90N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO3P Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: THT Gate charge: 78nC Kind of channel: enhancement Reverse recovery time: 85ns Polarisation: unipolar Kind of package: tube |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IXGT30N120B3D1 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO268
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO268
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFN30N120P |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 0.35Ω
Pulsed drain current: 75A
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Gate charge: 310nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
Reverse recovery time: 300ns
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 0.35Ω
Pulsed drain current: 75A
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Gate charge: 310nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYA30N120A3HV |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Kind of package: tube
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Kind of package: tube
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXYA30N120A4HV |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 106A; 500W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 184A
Kind of package: tube
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 106A
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 106A; 500W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 184A
Kind of package: tube
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 106A
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXGA30N120B3-TRL |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 300W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Pulsed collector current: 150A
Kind of package: reel; tape
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 60A
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 300W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Pulsed collector current: 150A
Kind of package: reel; tape
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 60A
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXGH30N120B3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO247-3
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO247-3
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXYH30N120C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 69nC
Technology: GenX3™; XPT™
Pulsed collector current: 145A
Turn-on time: 71ns
Kind of package: tube
Case: TO247-3
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 69nC
Technology: GenX3™; XPT™
Pulsed collector current: 145A
Turn-on time: 71ns
Kind of package: tube
Case: TO247-3
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFB30N120P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 0.35Ω
Power dissipation: 1.25kW
Gate charge: 310nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Kind of package: tube
Case: PLUS264™
Reverse recovery time: 300ns
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 0.35Ω
Power dissipation: 1.25kW
Gate charge: 310nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Kind of package: tube
Case: PLUS264™
Reverse recovery time: 300ns
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXGH30N120B3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Pulsed collector current: 150A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 60A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Pulsed collector current: 150A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 60A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXGH30N120C3H1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 80nC
Technology: GenX3™; PT
Pulsed collector current: 115A
Turn-on time: 60ns
Kind of package: tube
Case: TO247-3
Turn-off time: 415ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 80nC
Technology: GenX3™; PT
Pulsed collector current: 115A
Turn-on time: 60ns
Kind of package: tube
Case: TO247-3
Turn-off time: 415ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYA30N120A4HV-TRL |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 500W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Kind of package: reel; tape
Case: TO263
Collector current: 30A
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 500W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Kind of package: reel; tape
Case: TO263
Collector current: 30A
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXYH30N120A4 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 106A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 184A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 106A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 106A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 184A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 106A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXYH30N120B4 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 100A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 58nC
Pulsed collector current: 174A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 100A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 100A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 58nC
Pulsed collector current: 174A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 100A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXYH30N120C3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 416W
Gate charge: 69nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 133A
Turn-on time: 71ns
Kind of package: tube
Case: TO247-3
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 416W
Gate charge: 69nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 133A
Turn-on time: 71ns
Kind of package: tube
Case: TO247-3
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXYH30N120C4 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 94A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 166A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 94A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 94A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 166A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 94A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXYH30N120C4H1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 55A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 166A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 55A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 55A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 166A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 55A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXYP30N120A4 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 106A; 500W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 184A
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 106A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 106A; 500W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 184A
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 106A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXYP30N120B4 |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1kV; 30A; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1kV
Kind of package: tube
Case: TO220AB
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1kV; 30A; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1kV
Kind of package: tube
Case: TO220AB
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXYP30N120C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 69nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 145A
Turn-on time: 71ns
Kind of package: tube
Case: TO220-3
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 69nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 145A
Turn-on time: 71ns
Kind of package: tube
Case: TO220-3
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXYP30N120C4 |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Kind of package: tube
Case: TO220AB
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Kind of package: tube
Case: TO220AB
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXA33IF1200HB |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 76nC
Technology: Sonic FRD™; XPT™
Pulsed collector current: 75A
Turn-on time: 110ns
Kind of package: tube
Case: TO247-3
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 34A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 76nC
Technology: Sonic FRD™; XPT™
Pulsed collector current: 75A
Turn-on time: 110ns
Kind of package: tube
Case: TO247-3
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 34A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXDN614CI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 676 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 6.81 EUR |
| 17+ | 5.19 EUR |
| 25+ | 4.97 EUR |
| 50+ | 4.91 EUR |
| CPC1709J |
|
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 11000mA; max.60VDC; THT; ISOPLUS264™; OptoMOS
Mounting: THT
Control current max.: 100mA
On-state resistance: 50mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 60V DC
Case: ISOPLUS264™
Max. operating current: 11A
Turn-off time: 5ms
Category: DC Solid State Relays
Description: Relay: solid state; 11000mA; max.60VDC; THT; ISOPLUS264™; OptoMOS
Mounting: THT
Control current max.: 100mA
On-state resistance: 50mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 60V DC
Case: ISOPLUS264™
Max. operating current: 11A
Turn-off time: 5ms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CLA110MB1200NA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT227B
Max. forward voltage: 1.04V
Max. forward impulse current: 935A
Gate current: 40/80mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT227B
Max. forward voltage: 1.04V
Max. forward impulse current: 935A
Gate current: 40/80mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 31.27 EUR |
| MCC162-16io1 |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 108.84 EUR |
| MCC95-12io1B |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |
| MCC26-12io1B |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.64V
Max. forward impulse current: 560A
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.64V
Max. forward impulse current: 560A
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 37.96 EUR |
| 5+ | 35.3 EUR |
| DSEP29-06B |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 2.52V
Reverse recovery time: 25ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 2.52V
Reverse recovery time: 25ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
Heatsink thickness: 1.14...1.39mm
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 5.03 EUR |
| 18+ | 4.74 EUR |
| DSEP29-06A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.26V
Reverse recovery time: 35ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.26V
Reverse recovery time: 35ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
Heatsink thickness: 1.14...1.39mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSEP29-06AS-TUB |
|
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: D2PAK
Max. forward voltage: 1.26V
Max. forward impulse current: 250A
Power dissipation: 165W
Technology: HiPerFRED™
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: D2PAK
Max. forward voltage: 1.26V
Max. forward impulse current: 250A
Power dissipation: 165W
Technology: HiPerFRED™
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSEP29-06AS-TRL |
|
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,TO263AB; Ufmax: 1.61V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 1.61V
Max. forward impulse current: 250A
Technology: FRED
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,TO263AB; Ufmax: 1.61V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 1.61V
Max. forward impulse current: 250A
Technology: FRED
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DSEP29-12A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.81V
Reverse recovery time: 40ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.81V
Reverse recovery time: 40ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSEP29-12B |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220-2; tube; 140ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: TO220-2
Kind of package: tube
Max. forward voltage: 3.76V
Reverse recovery time: 140ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220-2; tube; 140ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: TO220-2
Kind of package: tube
Max. forward voltage: 3.76V
Reverse recovery time: 140ns
Technology: FRED
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXDI609SI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXDI609SIA |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 805 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 2.38 EUR |
| 48+ | 1.78 EUR |
| 50+ | 1.71 EUR |
| 52+ | 1.65 EUR |
| 100+ | 1.59 EUR |
| 300+ | 1.57 EUR |
| IXDI609SIATR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXDI609SITR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| VUO82-16NO7 |
|
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 54.3 EUR |
| 3+ | 50.92 EUR |
| 5+ | 50.88 EUR |
| IXDN630YI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 12.63 EUR |
| 10+ | 10.13 EUR |
| 25+ | 9.7 EUR |
| 50+ | 9.35 EUR |
| 100+ | 9.31 EUR |
| LOC110P |
|
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LOC110PTR |
|
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LOC110STR |
|
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFH80N65X2W |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PM1205S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PM1205STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PM1206S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PM1206STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXGH10N170A |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Collector-emitter voltage: 1.7kV
Power dissipation: 140W
Gate charge: 29nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 20A
Type of transistor: IGBT
Turn-on time: 107ns
Kind of package: tube
Case: TO247-3
Turn-off time: 240ns
Gate-emitter voltage: ±20V
Collector current: 5A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Collector-emitter voltage: 1.7kV
Power dissipation: 140W
Gate charge: 29nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 20A
Type of transistor: IGBT
Turn-on time: 107ns
Kind of package: tube
Case: TO247-3
Turn-off time: 240ns
Gate-emitter voltage: ±20V
Collector current: 5A
Mounting: THT
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 12.07 EUR |
| 10+ | 9.78 EUR |
| IXGH10N170 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Collector-emitter voltage: 1.7kV
Power dissipation: 110W
Gate charge: 32nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 0.3µs
Kind of package: tube
Case: TO247-3
Turn-off time: 630ns
Gate-emitter voltage: ±20V
Collector current: 10A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Collector-emitter voltage: 1.7kV
Power dissipation: 110W
Gate charge: 32nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 0.3µs
Kind of package: tube
Case: TO247-3
Turn-off time: 630ns
Gate-emitter voltage: ±20V
Collector current: 10A
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFR20N120P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 43.42 EUR |
| 3+ | 38.94 EUR |
| 10+ | 34.44 EUR |
| 30+ | 31.04 EUR |
| IXFX20N120P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFK20N120P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: TO264
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: TO264
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXSA20N120L2-7TR |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 136W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Mounting: SMD
Gate charge: 29nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 136W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Mounting: SMD
Gate charge: 29nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXSH20N120L2KHV |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; TO247-4; 30ns
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 136W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Mounting: THT
Gate charge: 29nC
Kind of channel: enhancement
Reverse recovery time: 30ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; TO247-4; 30ns
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 136W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Mounting: THT
Gate charge: 29nC
Kind of channel: enhancement
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFA26N30X3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Power dissipation: 170W
Gate charge: 22nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 66mΩ
Reverse recovery time: 105ns
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Power dissipation: 170W
Gate charge: 22nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 66mΩ
Reverse recovery time: 105ns
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSA20C100PB |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.71V
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.1kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward impulse current: 0.24kA
Max. forward voltage: 0.71V
Power dissipation: 65W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.71V
Mounting: THT
Case: TO220AB
Max. off-state voltage: 0.1kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward impulse current: 0.24kA
Max. forward voltage: 0.71V
Power dissipation: 65W
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFH90N20X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 14.72 EUR |
| 7+ | 13.21 EUR |
| 10+ | 11.76 EUR |
| 20+ | 10.69 EUR |
| 30+ | 10.04 EUR |
| 60+ | 9.38 EUR |
| IXFA90N20X3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 28.37 EUR |
| IXFP90N20X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 11.79 EUR |
| 11+ | 8.04 EUR |
| 25+ | 7.37 EUR |
| 50+ | 7.2 EUR |
| IXFQ90N20X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 85ns
Polarisation: unipolar
Kind of package: tube
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 13.38 EUR |
| 8+ | 12.03 EUR |
| 10+ | 10.64 EUR |