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DSEP60-06AZ-TRL IXYS dsep60-06az-datasheet?assetguid=67e17690-63b2-4b68-8e19-a7ef161d4ceb Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60A; 35ns; D3PAK,TO268AA; 2V; Ifsm: 600A
Type of diode: rectifying
Mounting: SMD
Load current: 60A
Max. forward impulse current: 0.6kA
Case: D3PAK; TO268AA
Kind of package: reel; tape
Max. forward voltage: 2V
Reverse recovery time: 35ns
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DSEP60-06AZ-TUB IXYS DSEP60-06AZ?assetguid=67e17690-63b2-4b68-8e19-a7ef161d4ceb Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60A; 35ns; D3PAK,TO268AA; 2V; Ifsm: 600A
Type of diode: rectifying
Mounting: SMD
Load current: 60A
Max. forward impulse current: 0.6kA
Case: D3PAK; TO268AA
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 35ns
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DSEP60-12B IXYS littelfuse-power-semiconductors-dsep60-12b-datasheet?assetguid=d6424097-d31e-436f-a612-3acaffab9fed Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; Ifsm: 500A; TO247-2; tube; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward impulse current: 0.5kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 3.25V
Reverse recovery time: 65ns
Technology: FRED
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IXGT25N160 IXGT25N160 IXYS IXGH(T)25N160.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
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IXGA30N120B3 IXGA30N120B3 IXYS IXGA(H,P)30N120B3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO263
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: SMD
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IXGP30N120B3 IXGP30N120B3 IXYS IXGA(H,P)30N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO220-3
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
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IXGT30N120B3D1 IXGT30N120B3D1 IXYS IXGH(t)30N120B3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO268
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: SMD
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IXFN30N120P IXFN30N120P IXYS IXFN30N120P.pdf Category: Transistor modules
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 0.35Ω
Pulsed drain current: 75A
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Gate charge: 310nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
Reverse recovery time: 300ns
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IXYA30N120A3HV IXYA30N120A3HV IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Kind of package: tube
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: SMD
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IXYA30N120A4HV IXYA30N120A4HV IXYS littelfuse-discrete-igbts-ixy-30n120a4-datasheet?assetguid=9fce9f90-2af9-4a75-bf7f-be975fe328f4 Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 106A; 500W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 184A
Kind of package: tube
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 106A
Mounting: SMD
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IXGA30N120B3-TRL IXGA30N120B3-TRL IXYS PdfFile261269.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 300W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Pulsed collector current: 150A
Kind of package: reel; tape
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 60A
Mounting: SMD
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IXGH30N120B3D1 IXGH30N120B3D1 IXYS IXGH(t)30N120B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO247-3
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
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IXYH30N120C3 IXYH30N120C3 IXYS IXY_30N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 69nC
Technology: GenX3™; XPT™
Pulsed collector current: 145A
Turn-on time: 71ns
Kind of package: tube
Case: TO247-3
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
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IXFB30N120P IXFB30N120P IXYS IXFB30N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 0.35Ω
Power dissipation: 1.25kW
Gate charge: 310nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Kind of package: tube
Case: PLUS264™
Reverse recovery time: 300ns
Mounting: THT
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IXGH30N120B3 IXYS littelfuse-discrete-igbts-ixg-30n120b3-datasheet?assetguid=cb0c0eda-e177-4166-a05f-e0899ba5bd64 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Pulsed collector current: 150A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 60A
Mounting: THT
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IXGH30N120C3H1 IXGH30N120C3H1 IXYS IXGH30N120C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 80nC
Technology: GenX3™; PT
Pulsed collector current: 115A
Turn-on time: 60ns
Kind of package: tube
Case: TO247-3
Turn-off time: 415ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: THT
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IXYA30N120A4HV-TRL IXYA30N120A4HV-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 500W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Kind of package: reel; tape
Case: TO263
Collector current: 30A
Mounting: SMD
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IXYH30N120A4 IXYS littelfuse-discrete-igbts-ixy-30n120a4-datasheet?assetguid=9fce9f90-2af9-4a75-bf7f-be975fe328f4 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 106A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 184A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 106A
Mounting: THT
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IXYH30N120B4 IXYS littelfuse-discrete-igbts-ixyh30n120b4-datasheet?assetguid=13438fd2-8a6e-4f3e-8fa7-b91305e3767c Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 100A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 58nC
Pulsed collector current: 174A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 100A
Mounting: THT
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IXYH30N120C3D1 IXYH30N120C3D1 IXYS IXYH30N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 416W
Gate charge: 69nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 133A
Turn-on time: 71ns
Kind of package: tube
Case: TO247-3
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
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IXYH30N120C4 IXYS littelfuse-discrete-igbts-ixyh30n120c4-datasheet?assetguid=c7f20c7f-04a8-494d-a5d4-ff27e9de9932 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 94A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 166A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 94A
Mounting: THT
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IXYH30N120C4H1 IXYS ixyh30n120c4h1?assetguid=25d3ae45-9a2b-4c95-83ec-2306b0257b09 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 55A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 166A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 55A
Mounting: THT
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IXYP30N120A4 IXYP30N120A4 IXYS littelfuse-discrete-igbts-ixy-30n120a4-datasheet?assetguid=9fce9f90-2af9-4a75-bf7f-be975fe328f4 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 106A; 500W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 184A
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 106A
Mounting: THT
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IXYP30N120B4 IXYP30N120B4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 1kV; 30A; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1kV
Kind of package: tube
Case: TO220AB
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
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IXYP30N120C3 IXYP30N120C3 IXYS IXY_30N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 69nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 145A
Turn-on time: 71ns
Kind of package: tube
Case: TO220-3
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
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IXYP30N120C4 IXYP30N120C4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Kind of package: tube
Case: TO220AB
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
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IXA33IF1200HB IXA33IF1200HB IXYS IXA33IF1200HB.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 76nC
Technology: Sonic FRD™; XPT™
Pulsed collector current: 75A
Turn-on time: 110ns
Kind of package: tube
Case: TO247-3
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 34A
Mounting: THT
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IXDN614CI IXDN614CI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
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CPC1709J CPC1709J IXYS CPC1709.pdf Category: DC Solid State Relays
Description: Relay: solid state; 11000mA; max.60VDC; THT; ISOPLUS264™; OptoMOS
Mounting: THT
Control current max.: 100mA
On-state resistance: 50mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 60V DC
Case: ISOPLUS264™
Max. operating current: 11A
Turn-off time: 5ms
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CLA110MB1200NA CLA110MB1200NA IXYS CLA110MB1200NA.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT227B
Max. forward voltage: 1.04V
Max. forward impulse current: 935A
Gate current: 40/80mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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MCC162-16io1 MCC162-16io1 IXYS MCC162-16IO1.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Max. forward voltage: 1.25V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 181A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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MCC95-12io1B MCC95-12io1B IXYS MCC95-12IO1B-DTE.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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MCC26-12io1B MCC26-12io1B IXYS L073.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.64V
Max. forward impulse current: 560A
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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DSEP29-06B DSEP29-06B IXYS Littelfuse-Power-Semiconductors-DSEP29-06B-Datasheet?assetguid=ee90203e-7c1e-47ff-b7dc-ff230a0cf920 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 2.52V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 165W
Reverse recovery time: 25ns
Technology: HiPerFRED™
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DSEP29-06A DSEP29-06A IXYS DSEP29-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.26V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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DSEP29-06AS-TUB DSEP29-06AS-TUB IXYS DSEP29-06AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.26V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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DSEP29-06AS-TRL DSEP29-06AS-TRL IXYS Littelfuse-Power-Semiconductors-DSEP29-06AS-Datasheet?assetguid=6f2375d2-6e96-43c3-a6cd-31a48417f060 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,TO263AB; Ufmax: 1.61V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: D2PAK; TO263AB
Kind of package: reel; tape
Max. forward voltage: 1.61V
Reverse recovery time: 35ns
Technology: FRED
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DSEP29-12A DSEP29-12A IXYS DSEP29-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.81V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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DSEP29-12B IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220-2; tube; 140ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: TO220-2
Kind of package: tube
Max. forward voltage: 3.76V
Reverse recovery time: 140ns
Technology: FRED
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IXDI609SI IXDI609SI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDI609SIA IXDI609SIA IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDI609SIATR IXDI609SIATR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDI609SITR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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VUO82-16NO7 IXYS VUO82-16NO7.pdf LFPCN250701_PWS-x screw.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
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IXDN630YI IXDN630YI IXYS IXD_630.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
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LOC110P LOC110P IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Number of channels: 1
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LOC110PTR IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Number of channels: 1
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LOC110STR LOC110STR IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Insulation voltage: 3.75kV
Trigger current: 1A
Number of channels: 1
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IXFH80N65X2W IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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PM1205S PM1205S IXYS PM1205.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
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PM1205STR IXYS PM1205.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
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PM1206S PM1206S IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
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PM1206STR IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
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IXGH10N170A IXGH10N170A IXYS IXG_10N170A.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Type of transistor: IGBT
Technology: NPT
Power dissipation: 140W
Case: TO247-3
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Pulsed collector current: 20A
Turn-on time: 107ns
Turn-off time: 240ns
Gate-emitter voltage: ±20V
Collector current: 5A
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IXGH10N170 IXGH10N170 IXYS IXGH(t)10N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Collector-emitter voltage: 1.7kV
Power dissipation: 110W
Gate charge: 32nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 0.3µs
Kind of package: tube
Case: TO247-3
Turn-off time: 630ns
Gate-emitter voltage: ±20V
Collector current: 10A
Mounting: THT
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IXFR20N120P IXFR20N120P IXYS IXFR20N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 193nC
Kind of package: tube
On-state resistance: 0.63Ω
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
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IXFX20N120P IXFX20N120P IXYS IXF_20N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Power dissipation: 780W
Case: PLUS247™
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Reverse recovery time: 300ns
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
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IXFK20N120P IXFK20N120P IXYS IXF_20N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Power dissipation: 780W
Case: TO264
Mounting: THT
Gate charge: 193nC
Kind of package: tube
On-state resistance: 570mΩ
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
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IXSA20N120L2-7TR IXYS power-semiconductor-sic-mosfet-ixsa20n120l2-7tr-datasheet?assetguid=a14281e4-0ae1-4134-8838-c211060cd4b7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Power dissipation: 136W
Case: D2PAK-7
Mounting: SMD
Gate charge: 29nC
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Polarisation: N
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
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IXSH20N120L2KHV IXYS ixsh20n120l2khv-datasheet?assetguid=9393cb5f-7bae-401e-ad69-960584edc726 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; TO247-4; 30ns
Type of transistor: N-MOSFET
Technology: SiC
Power dissipation: 136W
Case: TO247-4
Mounting: THT
Gate charge: 29nC
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Reverse recovery time: 30ns
Polarisation: N
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
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DSEP60-06AZ-TRL dsep60-06az-datasheet?assetguid=67e17690-63b2-4b68-8e19-a7ef161d4ceb
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60A; 35ns; D3PAK,TO268AA; 2V; Ifsm: 600A
Type of diode: rectifying
Mounting: SMD
Load current: 60A
Max. forward impulse current: 0.6kA
Case: D3PAK; TO268AA
Kind of package: reel; tape
Max. forward voltage: 2V
Reverse recovery time: 35ns
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DSEP60-06AZ-TUB DSEP60-06AZ?assetguid=67e17690-63b2-4b68-8e19-a7ef161d4ceb
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60A; 35ns; D3PAK,TO268AA; 2V; Ifsm: 600A
Type of diode: rectifying
Mounting: SMD
Load current: 60A
Max. forward impulse current: 0.6kA
Case: D3PAK; TO268AA
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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DSEP60-12B littelfuse-power-semiconductors-dsep60-12b-datasheet?assetguid=d6424097-d31e-436f-a612-3acaffab9fed
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; Ifsm: 500A; TO247-2; tube; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward impulse current: 0.5kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 3.25V
Reverse recovery time: 65ns
Technology: FRED
Produkt ist nicht verfügbar
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IXGT25N160 IXGH(T)25N160.pdf
IXGT25N160
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
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IXGA30N120B3 IXGA(H,P)30N120B3.pdf
IXGA30N120B3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO263
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: SMD
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IXGP30N120B3 IXGA(H,P)30N120B3.pdf
IXGP30N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO220-3
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
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IXGT30N120B3D1 IXGH(t)30N120B3D1.pdf
IXGT30N120B3D1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO268
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: SMD
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IXFN30N120P IXFN30N120P.pdf
IXFN30N120P
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 0.35Ω
Pulsed drain current: 75A
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Gate charge: 310nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
Reverse recovery time: 300ns
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IXYA30N120A3HV
IXYA30N120A3HV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Kind of package: tube
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: SMD
Produkt ist nicht verfügbar
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IXYA30N120A4HV littelfuse-discrete-igbts-ixy-30n120a4-datasheet?assetguid=9fce9f90-2af9-4a75-bf7f-be975fe328f4
IXYA30N120A4HV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 106A; 500W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 184A
Kind of package: tube
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 106A
Mounting: SMD
Produkt ist nicht verfügbar
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IXGA30N120B3-TRL PdfFile261269.pdf
IXGA30N120B3-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 300W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Pulsed collector current: 150A
Kind of package: reel; tape
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 60A
Mounting: SMD
Produkt ist nicht verfügbar
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IXGH30N120B3D1 IXGH(t)30N120B3D1.pdf
IXGH30N120B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO247-3
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
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IXYH30N120C3 IXY_30N120C3.pdf
IXYH30N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 69nC
Technology: GenX3™; XPT™
Pulsed collector current: 145A
Turn-on time: 71ns
Kind of package: tube
Case: TO247-3
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
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IXFB30N120P IXFB30N120P.pdf
IXFB30N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 0.35Ω
Power dissipation: 1.25kW
Gate charge: 310nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Kind of package: tube
Case: PLUS264™
Reverse recovery time: 300ns
Mounting: THT
Produkt ist nicht verfügbar
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IXGH30N120B3 littelfuse-discrete-igbts-ixg-30n120b3-datasheet?assetguid=cb0c0eda-e177-4166-a05f-e0899ba5bd64
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Pulsed collector current: 150A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 60A
Mounting: THT
Produkt ist nicht verfügbar
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IXGH30N120C3H1 IXGH30N120C3H1.pdf
IXGH30N120C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 80nC
Technology: GenX3™; PT
Pulsed collector current: 115A
Turn-on time: 60ns
Kind of package: tube
Case: TO247-3
Turn-off time: 415ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: THT
Produkt ist nicht verfügbar
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IXYA30N120A4HV-TRL
IXYA30N120A4HV-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 500W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Kind of package: reel; tape
Case: TO263
Collector current: 30A
Mounting: SMD
Produkt ist nicht verfügbar
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IXYH30N120A4 littelfuse-discrete-igbts-ixy-30n120a4-datasheet?assetguid=9fce9f90-2af9-4a75-bf7f-be975fe328f4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 106A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 184A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 106A
Mounting: THT
Produkt ist nicht verfügbar
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IXYH30N120B4 littelfuse-discrete-igbts-ixyh30n120b4-datasheet?assetguid=13438fd2-8a6e-4f3e-8fa7-b91305e3767c
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 100A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 58nC
Pulsed collector current: 174A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 100A
Mounting: THT
Produkt ist nicht verfügbar
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IXYH30N120C3D1 IXYH30N120C3D1.pdf
IXYH30N120C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 416W
Gate charge: 69nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 133A
Turn-on time: 71ns
Kind of package: tube
Case: TO247-3
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
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IXYH30N120C4 littelfuse-discrete-igbts-ixyh30n120c4-datasheet?assetguid=c7f20c7f-04a8-494d-a5d4-ff27e9de9932
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 94A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 166A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 94A
Mounting: THT
Produkt ist nicht verfügbar
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IXYH30N120C4H1 ixyh30n120c4h1?assetguid=25d3ae45-9a2b-4c95-83ec-2306b0257b09
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 55A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 166A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 55A
Mounting: THT
Produkt ist nicht verfügbar
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IXYP30N120A4 littelfuse-discrete-igbts-ixy-30n120a4-datasheet?assetguid=9fce9f90-2af9-4a75-bf7f-be975fe328f4
IXYP30N120A4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 106A; 500W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 184A
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 106A
Mounting: THT
Produkt ist nicht verfügbar
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IXYP30N120B4
IXYP30N120B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1kV; 30A; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1kV
Kind of package: tube
Case: TO220AB
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
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IXYP30N120C3 IXY_30N120C3.pdf
IXYP30N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 69nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 145A
Turn-on time: 71ns
Kind of package: tube
Case: TO220-3
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
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IXYP30N120C4
IXYP30N120C4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Kind of package: tube
Case: TO220AB
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
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IXA33IF1200HB IXA33IF1200HB.pdf
IXA33IF1200HB
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 76nC
Technology: Sonic FRD™; XPT™
Pulsed collector current: 75A
Turn-on time: 110ns
Kind of package: tube
Case: TO247-3
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 34A
Mounting: THT
Produkt ist nicht verfügbar
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IXDN614CI IXDD614CI-DTE.pdf
IXDN614CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 676 Stücke:
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CPC1709J CPC1709.pdf
CPC1709J
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 11000mA; max.60VDC; THT; ISOPLUS264™; OptoMOS
Mounting: THT
Control current max.: 100mA
On-state resistance: 50mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 60V DC
Case: ISOPLUS264™
Max. operating current: 11A
Turn-off time: 5ms
Produkt ist nicht verfügbar
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CLA110MB1200NA CLA110MB1200NA.pdf
CLA110MB1200NA
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT227B
Max. forward voltage: 1.04V
Max. forward impulse current: 935A
Gate current: 40/80mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 120 Stücke:
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MCC162-16io1 MCC162-16IO1.pdf PCN241015_Y4-M6 screw.pdf
MCC162-16io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Max. forward voltage: 1.25V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 181A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
auf Bestellung 1 Stücke:
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MCC95-12io1B MCC95-12IO1B-DTE.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC95-12io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 1 Stücke:
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MCC26-12io1B L073.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC26-12io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.64V
Max. forward impulse current: 560A
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 47 Stücke:
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DSEP29-06B Littelfuse-Power-Semiconductors-DSEP29-06B-Datasheet?assetguid=ee90203e-7c1e-47ff-b7dc-ff230a0cf920
DSEP29-06B
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 2.52V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 165W
Reverse recovery time: 25ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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DSEP29-06A DSEP29-06A.pdf
DSEP29-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.26V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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DSEP29-06AS-TUB DSEP29-06AS.pdf
DSEP29-06AS-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.26V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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DSEP29-06AS-TRL Littelfuse-Power-Semiconductors-DSEP29-06AS-Datasheet?assetguid=6f2375d2-6e96-43c3-a6cd-31a48417f060
DSEP29-06AS-TRL
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,TO263AB; Ufmax: 1.61V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: D2PAK; TO263AB
Kind of package: reel; tape
Max. forward voltage: 1.61V
Reverse recovery time: 35ns
Technology: FRED
Produkt ist nicht verfügbar
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DSEP29-12A DSEP29-12A.pdf
DSEP29-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.81V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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DSEP29-12B
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO220-2; tube; 140ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: TO220-2
Kind of package: tube
Max. forward voltage: 3.76V
Reverse recovery time: 140ns
Technology: FRED
Produkt ist nicht verfügbar
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IXDI609SI IXDD609CI.pdf
IXDI609SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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IXDI609SIA IXDD609CI.pdf
IXDI609SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 805 Stücke:
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IXDI609SIATR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
IXDI609SIATR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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IXDI609SITR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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VUO82-16NO7 VUO82-16NO7.pdf LFPCN250701_PWS-x screw.pdf
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
auf Bestellung 22 Stücke:
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IXDN630YI IXD_630.pdf
IXDN630YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
auf Bestellung 114 Stücke:
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LOC110P LOC110.pdf
LOC110P
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Number of channels: 1
Produkt ist nicht verfügbar
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LOC110PTR LOC110.pdf
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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LOC110STR LOC110.pdf
LOC110STR
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Insulation voltage: 3.75kV
Trigger current: 1A
Number of channels: 1
Produkt ist nicht verfügbar
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IXFH80N65X2W
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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PM1205S PM1205.pdf
PM1205S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
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PM1205STR PM1205.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 500V AC
Max. operating current: 0.5A
Control current max.: 100mA
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PM1206S PM1206.pdf
PM1206S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
Produkt ist nicht verfügbar
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PM1206STR PM1206.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IXGH10N170A IXG_10N170A.pdf
IXGH10N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Type of transistor: IGBT
Technology: NPT
Power dissipation: 140W
Case: TO247-3
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Pulsed collector current: 20A
Turn-on time: 107ns
Turn-off time: 240ns
Gate-emitter voltage: ±20V
Collector current: 5A
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
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IXGH10N170 IXGH(t)10N170.pdf
IXGH10N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Collector-emitter voltage: 1.7kV
Power dissipation: 110W
Gate charge: 32nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 70A
Type of transistor: IGBT
Turn-on time: 0.3µs
Kind of package: tube
Case: TO247-3
Turn-off time: 630ns
Gate-emitter voltage: ±20V
Collector current: 10A
Mounting: THT
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IXFR20N120P IXFR20N120P.pdf
IXFR20N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Power dissipation: 290W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 193nC
Kind of package: tube
On-state resistance: 0.63Ω
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
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IXFX20N120P IXF_20N120P.pdf
IXFX20N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Power dissipation: 780W
Case: PLUS247™
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Reverse recovery time: 300ns
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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IXFK20N120P IXF_20N120P.pdf
IXFK20N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Power dissipation: 780W
Case: TO264
Mounting: THT
Gate charge: 193nC
Kind of package: tube
On-state resistance: 570mΩ
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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IXSA20N120L2-7TR power-semiconductor-sic-mosfet-ixsa20n120l2-7tr-datasheet?assetguid=a14281e4-0ae1-4134-8838-c211060cd4b7
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Power dissipation: 136W
Case: D2PAK-7
Mounting: SMD
Gate charge: 29nC
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Polarisation: N
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IXSH20N120L2KHV ixsh20n120l2khv-datasheet?assetguid=9393cb5f-7bae-401e-ad69-960584edc726
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 20A; 136W; TO247-4; 30ns
Type of transistor: N-MOSFET
Technology: SiC
Power dissipation: 136W
Case: TO247-4
Mounting: THT
Gate charge: 29nC
Gate-source voltage: -5...20V
On-state resistance: 160Ω
Reverse recovery time: 30ns
Polarisation: N
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
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