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IXFR40N90P IXFR40N90P IXYS IXFR40N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 230nC
On-state resistance: 0.25Ω
Drain current: 21A
Power dissipation: 300W
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXFH16N80P IXFH16N80P IXYS IXFH16N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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IXFT16N80P IXFT16N80P IXYS IXFH16N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
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IXFN56N90P IXFN56N90P IXYS IXFN56N90P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Pulsed drain current: 168A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Semiconductor structure: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
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IXKC19N60C5 IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Reverse recovery time: 430ns
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IXFH10N80P IXFH10N80P IXYS IXFA(H,P,Q)10N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
auf Bestellung 261 Stücke:
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13+5.65 EUR
16+4.63 EUR
30+4.26 EUR
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IXFP10N80P IXFP10N80P IXYS IXFA(H,P,Q)10N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
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13+5.75 EUR
50+4.68 EUR
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IXFA10N80P IXFA10N80P IXYS IXFA(H,P,Q)10N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
auf Bestellung 264 Stücke:
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16+4.58 EUR
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MCNA180PD2200YB IXYS PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 180A; Y4-M6; Ufmax: 1.18V; bulk
Max. forward voltage: 1.18V
Load current: 180A
Max. load current: 280A
Max. forward impulse current: 5.4kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: Y4-M6
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA650PD2200CB IXYS media?resourcetype=datasheets&itemid=CBDA49D5-9FD9-49E5-A455-70AC7F88D31C&filename=Littelfuse-Power-Semiconductors-MCNA650PD2200CB-Datasheet Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 650A; ComPack; Ufmax: 1.16V; bulk
Max. forward voltage: 1.16V
Load current: 650A
Max. forward impulse current: 16kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: ComPack
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCNA75PD2200TB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 75A; TO240AA; Ufmax: 1.21V; bulk
Max. forward voltage: 1.21V
Load current: 75A
Max. load current: 118A
Max. forward impulse current: 1.4kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA120PD2200TB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk
Max. forward voltage: 1.34V
Load current: 120A
Max. load current: 190A
Max. forward impulse current: 2.2kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA150PD2200YB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 150A; TO240AA; Ufmax: 1.18V; bulk
Max. forward voltage: 1.18V
Load current: 150A
Max. load current: 235A
Max. forward impulse current: 4.3kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA220PD2200YB IXYS PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 220A; Y4-M6; Ufmax: 1.19V; bulk
Max. forward voltage: 1.19V
Load current: 220A
Max. load current: 345A
Max. forward impulse current: 7.2kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: Y4-M6
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA40PD2200TB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 40A; TO240AA; Ufmax: 1.29V; bulk
Max. forward voltage: 1.29V
Load current: 40A
Max. load current: 63A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA55PD2200TB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 55A; TO240AA; Ufmax: 1.2V; Ifsm: 1kA
Max. forward voltage: 1.2V
Load current: 55A
Max. load current: 86A
Max. forward impulse current: 1kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA95PD2200TB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk
Max. forward voltage: 1.24V
Load current: 95A
Max. load current: 149A
Max. forward impulse current: 1.7kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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IXKH70N60C5 IXKH70N60C5 IXYS IXKH70N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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IXKT70N60C5 IXKT70N60C5 IXYS IXKT70N60C5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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DFE240X600NA DFE240X600NA IXYS DFE240X600NA.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw
Reverse recovery time: 35ns
Technology: FRED
Max. forward voltage: 1.2V
Semiconductor structure: double independent
Load current: 120A x2
Max. forward impulse current: 1.2kA
Max. off-state voltage: 0.6kV
Mechanical mounting: screw
Type of semiconductor module: diode
Electrical mounting: screw
Case: SOT227B
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1+71.5 EUR
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DFE250X600NA DFE250X600NA IXYS DFE250X600NA.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 125Ax2; SOT227B; screw
Load current: 125A x2
Max. load current: 250A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 1.2kA
Type of semiconductor module: diode
Semiconductor structure: double independent
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Kind of package: tube
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DFE25I600HA IXYS DFE25I600HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 240A; TO247-2; 35ns
Kind of package: tube
Reverse recovery time: 35ns
Type of diode: rectifying
Technology: FRED
Max. forward voltage: 1.4V
Semiconductor structure: single diode
Load current: 25A
Max. forward impulse current: 0.24kA
Max. off-state voltage: 0.6kV
Case: TO247-2
Mounting: THT
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IXHX40N150V1HV IXHX40N150V1HV IXYS IXHX40N150V1HV.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Max. forward impulse current: 7.6kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
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DSEP2X25-12C DSEP2X25-12C IXYS DSEP2x25-12C.pdf description Category: Diode modules
Description: Module: diode; double independent; 1.2kV; 25Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 25A x2
Case: SOT227B
Max. forward voltage: 2.95V
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 45 Stücke:
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3+30.67 EUR
5+29.84 EUR
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MCMA700PD1600CB IXYS media?resourcetype=datasheets&itemid=389EEA50-C86F-4206-B0B2-66DFC83D1711&filename=Littelfuse-Power-Semiconductors-MCMA700PD1600CB-Datasheet Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 700A; ComPack; Ufmax: 1.11V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.11V
Max. forward impulse current: 19kA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Mechanical mounting: screw
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IXDI609SIA IXDI609SIA IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 893 Stücke:
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24+3.06 EUR
38+1.9 EUR
44+1.64 EUR
50+1.49 EUR
100+1.36 EUR
200+1.32 EUR
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IXDI609SIATR IXDI609SIATR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDD609SIA IXDD609SIA IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 1081 Stücke:
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37+1.94 EUR
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IXDD609SIATR IXDD609SIATR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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CPC1010N CPC1010N IXYS CPC1010N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 11.5Ω
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Case: SOP4
Manufacturer series: OptoMOS
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CPC1010NTR CPC1010NTR IXYS CPC1010N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 11.5Ω
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Case: SOP4
Manufacturer series: OptoMOS
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IXFA12N50P IXFA12N50P IXYS IXF_12N50P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Reverse recovery time: 300ns
Gate charge: 29nC
On-state resistance: 0.5Ω
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
auf Bestellung 101 Stücke:
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22+3.35 EUR
50+3.05 EUR
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IXTP12N50P IXTP12N50P IXYS IXTA12N50P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 300ns
Gate charge: 29nC
On-state resistance: 0.5Ω
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Kind of channel: enhancement
Technology: Polar™
auf Bestellung 282 Stücke:
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20+3.58 EUR
23+3.2 EUR
26+2.83 EUR
50+2.56 EUR
250+2.52 EUR
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IXFH52N50P2 IXFH52N50P2 IXYS IXFH(T)52N50P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 113nC
On-state resistance: 0.12Ω
Drain current: 52A
Drain-source voltage: 500V
Kind of channel: enhancement
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.01 EUR
7+11.78 EUR
10+10.88 EUR
30+10.15 EUR
120+9.61 EUR
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IXTB62N50L IXTB62N50L IXYS IXTB62N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 800W
Case: PLUS264™
Mounting: THT
Kind of package: tube
Reverse recovery time: 0.5µs
Gate charge: 550nC
On-state resistance: 0.1Ω
Drain current: 62A
Drain-source voltage: 500V
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
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IXTN62N50L IXTN62N50L IXYS IXTN62N50L.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Power dissipation: 800W
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 0.5µs
Gate charge: 550nC
On-state resistance: 0.1Ω
Drain current: 62A
Pulsed drain current: 150A
Gate-source voltage: ±40V
Drain-source voltage: 500V
Kind of channel: enhancement
Technology: Linear™
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IXTP02N50D IXTP02N50D IXYS IXTP02N50D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 5ns
Gate charge: 0.12µC
On-state resistance: 30Ω
Drain current: 0.2A
Drain-source voltage: 500V
Kind of channel: depletion
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IXFH42N50P2 IXFH42N50P2 IXYS IXFH(T)42N50P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 830W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 92nC
On-state resistance: 0.145Ω
Drain current: 42A
Drain-source voltage: 500V
Kind of channel: enhancement
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IXFP12N50P IXFP12N50P IXYS IXF_12N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Drain current: 12A
Drain-source voltage: 500V
Kind of channel: enhancement
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IXFT52N50P2 IXFT52N50P2 IXYS IXFH(T)52N50P2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: TO268
Mounting: SMD
Kind of package: tube
Gate charge: 113nC
On-state resistance: 0.12Ω
Drain current: 52A
Drain-source voltage: 500V
Kind of channel: enhancement
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CLA50E1200HB CLA50E1200HB IXYS CLA50E1200HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
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CLA50E1200TC-TUB CLA50E1200TC-TUB IXYS CLA50E1200TC.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
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CLA50E1200TC-TRL IXYS Littelfuse-Power-Semiconductors-CLA50E1200TC-Datasheet?assetguid=0a7ad2bc-21e4-400c-913e-65dfcb8907e4 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
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PD2401 PD2401 IXYS PD2401.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Case: DIP4
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
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IX4427N IX4427N IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
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IX4428N IX4428N IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Number of channels: 2
Output current: -1.5...1.5A
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IX4427MTR IX4427MTR IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Number of channels: 2
Output current: -1.5...1.5A
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IX4340N IX4340N IXYS IX4340.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Output current: -5...5A
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IX4340NE IX4340NE IXYS IX4340.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Output current: -5...5A
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IX4340UE IX4340UE IXYS IX4340.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Output current: -5...5A
auf Bestellung 1775 Stücke:
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100+0.72 EUR
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IX4428MTR IX4428MTR IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Number of channels: 2
Output current: -1.5...1.5A
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DSA60C45HB DSA60C45HB IXYS DSA60C45HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
Power dissipation: 160W
auf Bestellung 299 Stücke:
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DSA60C45PB DSA60C45PB IXYS DSA60C45PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.67V
Load current: 30A x2
Power dissipation: 175W
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DSA60C100PB DSA60C100PB IXYS DSA60C100PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.78V
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.78V
Load current: 30A x2
Power dissipation: 175W
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DSA60C60HB DSA60C60HB IXYS DSA60C60HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO247-3; Ufmax: 0.75V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.75V
Load current: 30A x2
Power dissipation: 160W
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DSA60C60PB DSA60C60PB IXYS DSA60C60PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
Power dissipation: 175W
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IXTT26N60P IXTT26N60P IXYS IXTH(Q,T,V)26N60P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
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IXFT26N60P IXFT26N60P IXYS IXFH26N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTQ26N60P IXTQ26N60P IXYS IXTH(Q,T,V)26N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
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DSS16-01A DSS16-01A IXYS DSS16-01A_AR.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 16A; TO220AC; Ufmax: 0.64V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 100V
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 230A
Kind of package: tube
Power dissipation: 105W
Max. load current: 35A
Produkt ist nicht verfügbar
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IXFR40N90P IXFR40N90P.pdf
IXFR40N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 230nC
On-state resistance: 0.25Ω
Drain current: 21A
Power dissipation: 300W
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXFH16N80P IXFH16N80P.pdf
IXFH16N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXFT16N80P IXFH16N80P.pdf
IXFT16N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFN56N90P IXFN56N90P.pdf
IXFN56N90P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Pulsed drain current: 168A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Semiconductor structure: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXKC19N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Reverse recovery time: 430ns
Produkt ist nicht verfügbar
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IXFH10N80P IXFA(H,P,Q)10N80P.pdf
IXFH10N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
auf Bestellung 261 Stücke:
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13+5.65 EUR
16+4.63 EUR
30+4.26 EUR
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IXFP10N80P IXFA(H,P,Q)10N80P.pdf
IXFP10N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
auf Bestellung 297 Stücke:
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13+5.75 EUR
50+4.68 EUR
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IXFA10N80P IXFA(H,P,Q)10N80P.pdf
IXFA10N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
auf Bestellung 264 Stücke:
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14+5.15 EUR
16+4.58 EUR
21+3.55 EUR
50+3.3 EUR
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MCNA180PD2200YB PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 180A; Y4-M6; Ufmax: 1.18V; bulk
Max. forward voltage: 1.18V
Load current: 180A
Max. load current: 280A
Max. forward impulse current: 5.4kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: Y4-M6
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA650PD2200CB media?resourcetype=datasheets&itemid=CBDA49D5-9FD9-49E5-A455-70AC7F88D31C&filename=Littelfuse-Power-Semiconductors-MCNA650PD2200CB-Datasheet
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 650A; ComPack; Ufmax: 1.16V; bulk
Max. forward voltage: 1.16V
Load current: 650A
Max. forward impulse current: 16kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: ComPack
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCNA75PD2200TB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 75A; TO240AA; Ufmax: 1.21V; bulk
Max. forward voltage: 1.21V
Load current: 75A
Max. load current: 118A
Max. forward impulse current: 1.4kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCNA120PD2200TB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk
Max. forward voltage: 1.34V
Load current: 120A
Max. load current: 190A
Max. forward impulse current: 2.2kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCNA150PD2200YB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 150A; TO240AA; Ufmax: 1.18V; bulk
Max. forward voltage: 1.18V
Load current: 150A
Max. load current: 235A
Max. forward impulse current: 4.3kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCNA220PD2200YB PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 220A; Y4-M6; Ufmax: 1.19V; bulk
Max. forward voltage: 1.19V
Load current: 220A
Max. load current: 345A
Max. forward impulse current: 7.2kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: Y4-M6
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCNA40PD2200TB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 40A; TO240AA; Ufmax: 1.29V; bulk
Max. forward voltage: 1.29V
Load current: 40A
Max. load current: 63A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCNA55PD2200TB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 55A; TO240AA; Ufmax: 1.2V; Ifsm: 1kA
Max. forward voltage: 1.2V
Load current: 55A
Max. load current: 86A
Max. forward impulse current: 1kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCNA95PD2200TB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk
Max. forward voltage: 1.24V
Load current: 95A
Max. load current: 149A
Max. forward impulse current: 1.7kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXKH70N60C5 IXKH70N60C5.pdf
IXKH70N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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IXKT70N60C5 IXKT70N60C5.pdf
IXKT70N60C5
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DFE240X600NA DFE240X600NA.pdf
DFE240X600NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw
Reverse recovery time: 35ns
Technology: FRED
Max. forward voltage: 1.2V
Semiconductor structure: double independent
Load current: 120A x2
Max. forward impulse current: 1.2kA
Max. off-state voltage: 0.6kV
Mechanical mounting: screw
Type of semiconductor module: diode
Electrical mounting: screw
Case: SOT227B
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DFE250X600NA DFE250X600NA.pdf
DFE250X600NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 125Ax2; SOT227B; screw
Load current: 125A x2
Max. load current: 250A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 1.2kA
Type of semiconductor module: diode
Semiconductor structure: double independent
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DFE25I600HA DFE25I600HA.pdf
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 240A; TO247-2; 35ns
Kind of package: tube
Reverse recovery time: 35ns
Type of diode: rectifying
Technology: FRED
Max. forward voltage: 1.4V
Semiconductor structure: single diode
Load current: 25A
Max. forward impulse current: 0.24kA
Max. off-state voltage: 0.6kV
Case: TO247-2
Mounting: THT
Produkt ist nicht verfügbar
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IXHX40N150V1HV IXHX40N150V1HV.pdf
IXHX40N150V1HV
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Max. forward impulse current: 7.6kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Produkt ist nicht verfügbar
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DSEP2X25-12C description DSEP2x25-12C.pdf
DSEP2X25-12C
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; 25Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 25A x2
Case: SOT227B
Max. forward voltage: 2.95V
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+30.67 EUR
5+29.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
MCMA700PD1600CB media?resourcetype=datasheets&itemid=389EEA50-C86F-4206-B0B2-66DFC83D1711&filename=Littelfuse-Power-Semiconductors-MCMA700PD1600CB-Datasheet
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 700A; ComPack; Ufmax: 1.11V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.11V
Max. forward impulse current: 19kA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDI609SIA IXDD609CI.pdf
IXDI609SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 893 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.06 EUR
38+1.9 EUR
44+1.64 EUR
50+1.49 EUR
100+1.36 EUR
200+1.32 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IXDI609SIATR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
IXDI609SIATR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDD609SIA IXDD609CI.pdf
IXDD609SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 1081 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
50+1.43 EUR
55+1.3 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IXDD609SIATR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
IXDD609SIATR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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CPC1010N CPC1010N.pdf
CPC1010N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 11.5Ω
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Case: SOP4
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
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CPC1010NTR CPC1010N.pdf
CPC1010NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 11.5Ω
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Case: SOP4
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
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IXFA12N50P IXF_12N50P.pdf
IXFA12N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Reverse recovery time: 300ns
Gate charge: 29nC
On-state resistance: 0.5Ω
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.35 EUR
50+3.05 EUR
Mindestbestellmenge: 22
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IXTP12N50P IXTA12N50P-DTE.pdf
IXTP12N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 300ns
Gate charge: 29nC
On-state resistance: 0.5Ω
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Kind of channel: enhancement
Technology: Polar™
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
23+3.2 EUR
26+2.83 EUR
50+2.56 EUR
250+2.52 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IXFH52N50P2 IXFH(T)52N50P2.pdf
IXFH52N50P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 113nC
On-state resistance: 0.12Ω
Drain current: 52A
Drain-source voltage: 500V
Kind of channel: enhancement
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.01 EUR
7+11.78 EUR
10+10.88 EUR
30+10.15 EUR
120+9.61 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXTB62N50L IXTB62N50L.pdf
IXTB62N50L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 800W
Case: PLUS264™
Mounting: THT
Kind of package: tube
Reverse recovery time: 0.5µs
Gate charge: 550nC
On-state resistance: 0.1Ω
Drain current: 62A
Drain-source voltage: 500V
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+53.54 EUR
3+47.36 EUR
10+42.56 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXTN62N50L IXTN62N50L.pdf
IXTN62N50L
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Power dissipation: 800W
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 0.5µs
Gate charge: 550nC
On-state resistance: 0.1Ω
Drain current: 62A
Pulsed drain current: 150A
Gate-source voltage: ±40V
Drain-source voltage: 500V
Kind of channel: enhancement
Technology: Linear™
Produkt ist nicht verfügbar
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IXTP02N50D IXTP02N50D.pdf
IXTP02N50D
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 5ns
Gate charge: 0.12µC
On-state resistance: 30Ω
Drain current: 0.2A
Drain-source voltage: 500V
Kind of channel: depletion
Produkt ist nicht verfügbar
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IXFH42N50P2 IXFH(T)42N50P2.pdf
IXFH42N50P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 830W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 92nC
On-state resistance: 0.145Ω
Drain current: 42A
Drain-source voltage: 500V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFP12N50P IXF_12N50P.pdf
IXFP12N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Drain current: 12A
Drain-source voltage: 500V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT52N50P2 IXFH(T)52N50P2.pdf
IXFT52N50P2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: TO268
Mounting: SMD
Kind of package: tube
Gate charge: 113nC
On-state resistance: 0.12Ω
Drain current: 52A
Drain-source voltage: 500V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CLA50E1200HB CLA50E1200HB.pdf
CLA50E1200HB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.52 EUR
15+4.88 EUR
16+4.65 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
CLA50E1200TC-TUB CLA50E1200TC.pdf
CLA50E1200TC-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.72 EUR
10+8.35 EUR
30+7.34 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
CLA50E1200TC-TRL Littelfuse-Power-Semiconductors-CLA50E1200TC-Datasheet?assetguid=0a7ad2bc-21e4-400c-913e-65dfcb8907e4
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
Produkt ist nicht verfügbar
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PD2401 PD2401.pdf
PD2401
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Case: DIP4
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.22 EUR
25+6.91 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IX4427N IX4426-27-28.pdf
IX4427N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
auf Bestellung 1128 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
88+0.82 EUR
104+0.69 EUR
Mindestbestellmenge: 66
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IX4428N IX4426-27-28.pdf
IX4428N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Number of channels: 2
Output current: -1.5...1.5A
auf Bestellung 524 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
104+0.69 EUR
Mindestbestellmenge: 81
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IX4427MTR IX4426-27-28.pdf
IX4427MTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Number of channels: 2
Output current: -1.5...1.5A
auf Bestellung 222 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.5 EUR
57+1.26 EUR
73+0.99 EUR
90+0.8 EUR
Mindestbestellmenge: 48
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IX4340N IX4340.pdf
IX4340N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Output current: -5...5A
auf Bestellung 823 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
71+1.01 EUR
86+0.84 EUR
100+0.77 EUR
300+0.68 EUR
Mindestbestellmenge: 44
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IX4340NE IX4340.pdf
IX4340NE
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Output current: -5...5A
auf Bestellung 909 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
75+0.96 EUR
86+0.83 EUR
106+0.68 EUR
Mindestbestellmenge: 52
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IX4340UE IX4340.pdf
IX4340UE
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Output current: -5...5A
auf Bestellung 1775 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.92 EUR
75+0.95 EUR
87+0.83 EUR
100+0.72 EUR
240+0.71 EUR
Mindestbestellmenge: 38
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IX4428MTR IX4426-27-28.pdf
IX4428MTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Number of channels: 2
Output current: -1.5...1.5A
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
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DSA60C45HB DSA60C45HB.pdf
DSA60C45HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
Power dissipation: 160W
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.33 EUR
19+3.9 EUR
21+3.45 EUR
30+3.16 EUR
Mindestbestellmenge: 17
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DSA60C45PB DSA60C45PB.pdf
DSA60C45PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.67V
Load current: 30A x2
Power dissipation: 175W
Produkt ist nicht verfügbar
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DSA60C100PB DSA60C100PB.pdf
DSA60C100PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.78V
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.78V
Load current: 30A x2
Power dissipation: 175W
Produkt ist nicht verfügbar
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DSA60C60HB DSA60C60HB.pdf
DSA60C60HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO247-3; Ufmax: 0.75V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.75V
Load current: 30A x2
Power dissipation: 160W
Produkt ist nicht verfügbar
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DSA60C60PB DSA60C60PB.pdf
DSA60C60PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
Power dissipation: 175W
Produkt ist nicht verfügbar
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IXTT26N60P IXTH(Q,T,V)26N60P_S.pdf
IXTT26N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXFT26N60P IXFH26N60P.pdf
IXFT26N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTQ26N60P IXTH(Q,T,V)26N60P_S.pdf
IXTQ26N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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DSS16-01A DSS16-01A_AR.pdf
DSS16-01A
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 16A; TO220AC; Ufmax: 0.64V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 100V
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 230A
Kind of package: tube
Power dissipation: 105W
Max. load current: 35A
Produkt ist nicht verfügbar
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