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CPC1303GR CPC1303GR IXYS CPC1303GR.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 30V; SO4
Number of channels: 1
Mounting: SMD
Collector-emitter voltage: 30V
CTR@If: 200-2500%@0.2mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 2µs
Case: SO4
Turn-off time: 8µs
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53+1.63 EUR
55+1.57 EUR
58+1.48 EUR
60+1.43 EUR
100+1.36 EUR
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IXYH20N65B3 IXYS media?resourcetype=datasheets&amp;itemid=1ada074a-a195-4f5e-bc03-b3cf3a2bd9e1&amp;filename=littelfuse_discrete_igbts_xpt_ixy_20n65b3_datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 58A; 230W; TO247-3
Mounting: THT
Pulsed collector current: 108A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 58A
Collector-emitter voltage: 650V
Power dissipation: 230W
Gate charge: 29nC
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IXYH75N65C3H1 IXYH75N65C3H1 IXYS IXYH75N65C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Pulsed collector current: 360A
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IXYH75N65C3 IXYH75N65C3 IXYS IXYH75N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Pulsed collector current: 360A
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IXTP120N20X4 IXTP120N20X4 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixtp120n20x4-datasheet?assetguid=498447f2-cfa1-469a-ae0d-3e02c92edc63 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X4-Class; N; 200V; 120A; 417W; TO220-3; 190ns
Reverse recovery time: 190ns
Mounting: THT
Power dissipation: 417W
Gate charge: 108nC
Polarisation: N
Technology: X4-Class
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: TO220-3
On-state resistance: 9.5mΩ
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IXYT30N65C3H1HV IXYS IXY_30N65C3H1_HV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
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IXTA30N65X2 IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; D2PAK-3
Type of transistor: N-MOSFET
Technology: X2-Class
Case: D2PAK-3
Mounting: SMD
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IXXA30N65C3HV IXXA30N65C3HV IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 52A; 230W; D2PAK
Type of transistor: IGBT
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Collector current: 52A
Collector-emitter voltage: 650V
Pulsed collector current: 113A
Gate-emitter voltage: ±20V
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IXXH30N65B4 IXXH30N65B4 IXYS IXXH30N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
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IXXH30N65B4D1 IXXH30N65B4D1 IXYS IXXH30N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
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IXXH30N65C4D1 IXXH30N65C4D1 IXYS IXXH30N65C4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 136A
Turn-on time: 65ns
Turn-off time: 161ns
Gate-emitter voltage: ±20V
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IXYH30N65C3H1 IXYH30N65C3H1 IXYS IXY_30N65C3H1_HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
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IXYP30N65C3 IXYP30N65C3 IXYS IXYH(P)30N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
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IXTR140P10T IXTR140P10T IXYS IXTR140P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -110A
Power dissipation: 270W
Case: ISOPLUS247™
Gate-source voltage: ±15V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Technology: TrenchP™
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IXTA50N25T-TRL IXTA50N25T-TRL IXYS littelfuse-discrete-mosfets-ixt-50n25t-datasheet?assetguid=d7f19b2b-0219-4b0c-a29d-b093518ee586 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 250V; 50A; 400W; D2PAK,TO263; 166ns
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 166ns
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IXFH150N15P IXFH150N15P IXYS IXFH150N15P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 150A; 714W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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IXFH150N17T2 IXYS DS100229IXFHT150N17T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; 175V; 150A; 880W; TO247-3; 160ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 175V
Drain current: 150A
Power dissipation: 880W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 233nC
Kind of channel: enhancement
Reverse recovery time: 160ns
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MCC255-14io1 IXYS LFPCN250210_Y1-screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 250A; Y1; Ufmax: 1.36V
Case: Y1
Gate current: 150/220mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 250A
Kind of package: bulk
Semiconductor structure: double series
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MCC255-16io1 IXYS MCC255-16IO1.pdf LFPCN250210_Y1-screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V
Case: Y1-CU
Max. forward impulse current: 7.82kA
Gate current: 150/220mA
Max. forward voltage: 1.08V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 250A
Kind of package: bulk
Semiconductor structure: double series
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MCC255-12io1 IXYS LFPCN250210_Y1-screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 250A; Y1; Ufmax: 1.36V
Case: Y1
Gate current: 150/220mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 250A
Kind of package: bulk
Semiconductor structure: double series
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MCC255-18io1 IXYS MCC255-18io1.pdf LFPCN250210_Y1-screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V
Case: Y1-CU
Max. forward impulse current: 7.82kA
Gate current: 150/220mA
Max. forward voltage: 1.08V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 250A
Kind of package: bulk
Semiconductor structure: double series
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IXTK120N65X2 IXTK120N65X2 IXYS IXT_120N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
On-state resistance: 23mΩ
Reverse recovery time: 505ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Technology: X2-Class
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO264
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IXTK120N20P IXTK120N20P IXYS IXTK120N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264
On-state resistance: 22mΩ
Reverse recovery time: 180ns
Mounting: THT
Power dissipation: 714W
Gate charge: 152nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
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DSEP60-06A DSEP60-06A IXYS DSEP60-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 600A; TO247-2; tube; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Max. forward impulse current: 0.6kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 1.39V
Reverse recovery time: 35ns
Technology: HiPerFRED™
Power dissipation: 330W
Features of semiconductor devices: fast switching
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9+9.63 EUR
10+8.94 EUR
30+7.98 EUR
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DSEP60-06AT-TUB DSEP60-06AT-TUB IXYS DSEP60-06AT.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 60A; 35ns; D3PAK; Ufmax: 1.39V; 330W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Max. forward impulse current: 0.6kA
Case: D3PAK
Max. forward voltage: 1.39V
Reverse recovery time: 35ns
Technology: HiPerFRED™
Power dissipation: 330W
Features of semiconductor devices: fast switching
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DSEP60-06AZ-TRL IXYS dsep60-06az-datasheet?assetguid=67e17690-63b2-4b68-8e19-a7ef161d4ceb Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60A; 35ns; D3PAK,TO268AA; 2V; Ifsm: 600A
Type of diode: rectifying
Mounting: SMD
Load current: 60A
Max. forward impulse current: 0.6kA
Case: D3PAK; TO268AA
Kind of package: reel; tape
Max. forward voltage: 2V
Reverse recovery time: 35ns
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DSEP60-06AZ-TUB IXYS DSEP60-06AZ?assetguid=67e17690-63b2-4b68-8e19-a7ef161d4ceb Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60A; 35ns; D3PAK,TO268AA; 2V; Ifsm: 600A
Type of diode: rectifying
Mounting: SMD
Load current: 60A
Max. forward impulse current: 0.6kA
Case: D3PAK; TO268AA
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 35ns
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DSEP60-12B IXYS littelfuse-power-semiconductors-dsep60-12b-datasheet?assetguid=d6424097-d31e-436f-a612-3acaffab9fed Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; Ifsm: 500A; TO247-2; tube; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward impulse current: 0.5kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 3.25V
Reverse recovery time: 65ns
Technology: FRED
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IXGT25N160 IXGT25N160 IXYS IXGH(T)25N160.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
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IXGA30N120B3 IXGA30N120B3 IXYS IXGA(H,P)30N120B3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO263
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: SMD
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10+11.2 EUR
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IXGP30N120B3 IXGP30N120B3 IXYS IXGA(H,P)30N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO220-3
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
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IXGT30N120B3D1 IXGT30N120B3D1 IXYS IXGH(t)30N120B3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO268
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: SMD
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IXFN30N120P IXFN30N120P IXYS IXFN30N120P.pdf Category: Transistor modules
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 0.35Ω
Pulsed drain current: 75A
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Gate charge: 310nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
Reverse recovery time: 300ns
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IXYA30N120A3HV IXYA30N120A3HV IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Kind of package: tube
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: SMD
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IXYA30N120A4HV IXYA30N120A4HV IXYS littelfuse-discrete-igbts-ixy-30n120a4-datasheet?assetguid=9fce9f90-2af9-4a75-bf7f-be975fe328f4 Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 106A; 500W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 184A
Kind of package: tube
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 106A
Mounting: SMD
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IXGA30N120B3-TRL IXGA30N120B3-TRL IXYS PdfFile261269.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 300W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Pulsed collector current: 150A
Kind of package: reel; tape
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 60A
Mounting: SMD
Produkt ist nicht verfügbar
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IXGH30N120B3D1 IXGH30N120B3D1 IXYS IXGH(t)30N120B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO247-3
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
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IXYH30N120C3 IXYH30N120C3 IXYS IXY_30N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 69nC
Technology: GenX3™; XPT™
Pulsed collector current: 145A
Turn-on time: 71ns
Kind of package: tube
Case: TO247-3
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
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IXFB30N120P IXFB30N120P IXYS IXFB30N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 0.35Ω
Power dissipation: 1.25kW
Gate charge: 310nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Kind of package: tube
Case: PLUS264™
Reverse recovery time: 300ns
Mounting: THT
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IXGH30N120B3 IXYS littelfuse-discrete-igbts-ixg-30n120b3-datasheet?assetguid=cb0c0eda-e177-4166-a05f-e0899ba5bd64 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Pulsed collector current: 150A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 60A
Mounting: THT
Produkt ist nicht verfügbar
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IXGH30N120C3H1 IXGH30N120C3H1 IXYS IXGH30N120C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 80nC
Technology: GenX3™; PT
Pulsed collector current: 115A
Turn-on time: 60ns
Kind of package: tube
Case: TO247-3
Turn-off time: 415ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: THT
Produkt ist nicht verfügbar
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IXYA30N120A4HV-TRL IXYA30N120A4HV-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 500W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Kind of package: reel; tape
Case: TO263
Collector current: 30A
Mounting: SMD
Produkt ist nicht verfügbar
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IXYH30N120A4 IXYS littelfuse-discrete-igbts-ixy-30n120a4-datasheet?assetguid=9fce9f90-2af9-4a75-bf7f-be975fe328f4 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 106A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 184A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 106A
Mounting: THT
Produkt ist nicht verfügbar
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IXYH30N120B4 IXYS littelfuse-discrete-igbts-ixyh30n120b4-datasheet?assetguid=13438fd2-8a6e-4f3e-8fa7-b91305e3767c Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 100A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 58nC
Pulsed collector current: 174A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 100A
Mounting: THT
Produkt ist nicht verfügbar
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IXYH30N120C3D1 IXYH30N120C3D1 IXYS IXYH30N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 416W
Gate charge: 69nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 133A
Turn-on time: 71ns
Kind of package: tube
Case: TO247-3
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
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IXYH30N120C4 IXYS littelfuse-discrete-igbts-ixyh30n120c4-datasheet?assetguid=c7f20c7f-04a8-494d-a5d4-ff27e9de9932 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 94A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 166A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 94A
Mounting: THT
Produkt ist nicht verfügbar
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IXYH30N120C4H1 IXYS ixyh30n120c4h1?assetguid=25d3ae45-9a2b-4c95-83ec-2306b0257b09 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 55A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 166A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 55A
Mounting: THT
Produkt ist nicht verfügbar
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IXYP30N120A4 IXYP30N120A4 IXYS littelfuse-discrete-igbts-ixy-30n120a4-datasheet?assetguid=9fce9f90-2af9-4a75-bf7f-be975fe328f4 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 106A; 500W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 184A
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 106A
Mounting: THT
Produkt ist nicht verfügbar
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IXYP30N120B4 IXYP30N120B4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 1kV; 30A; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1kV
Kind of package: tube
Case: TO220AB
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
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IXYP30N120C3 IXYP30N120C3 IXYS IXY_30N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 69nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 145A
Turn-on time: 71ns
Kind of package: tube
Case: TO220-3
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
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IXYP30N120C4 IXYP30N120C4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Kind of package: tube
Case: TO220AB
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
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IXA33IF1200HB IXA33IF1200HB IXYS IXA33IF1200HB.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 76nC
Technology: Sonic FRD™; XPT™
Pulsed collector current: 75A
Turn-on time: 110ns
Kind of package: tube
Case: TO247-3
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 34A
Mounting: THT
Produkt ist nicht verfügbar
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IXDN614CI IXDN614CI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 676 Stücke:
Lieferzeit 14-21 Tag (e)
13+6.81 EUR
17+5.19 EUR
25+4.97 EUR
50+4.91 EUR
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CPC1709J CPC1709J IXYS CPC1709.pdf Category: DC Solid State Relays
Description: Relay: solid state; 11000mA; max.60VDC; THT; ISOPLUS264™; OptoMOS
Mounting: THT
Control current max.: 100mA
On-state resistance: 50mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 60V DC
Case: ISOPLUS264™
Max. operating current: 11A
Turn-off time: 5ms
Produkt ist nicht verfügbar
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CLA110MB1200NA CLA110MB1200NA IXYS CLA110MB1200NA.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT227B
Max. forward voltage: 1.04V
Max. forward impulse current: 935A
Gate current: 40/80mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 120 Stücke:
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3+31.27 EUR
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MCC162-16io1 MCC162-16io1 IXYS MCC162-16IO1.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 8 Stücke:
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1+108.84 EUR
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MCC95-12io1B MCC95-12io1B IXYS MCC95-12IO1B-DTE.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 1 Stücke:
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MCC26-12io1B MCC26-12io1B IXYS L073.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.64V
Max. forward impulse current: 560A
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 47 Stücke:
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3+37.96 EUR
5+35.3 EUR
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DSEP29-06B DSEP29-06B IXYS Littelfuse-Power-Semiconductors-DSEP29-06B-Datasheet?assetguid=ee90203e-7c1e-47ff-b7dc-ff230a0cf920 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 2.52V
Reverse recovery time: 25ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
Heatsink thickness: 1.14...1.39mm
auf Bestellung 18 Stücke:
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17+5.03 EUR
18+4.74 EUR
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DSEP29-06A DSEP29-06A IXYS DSEP29-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.26V
Reverse recovery time: 35ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
Heatsink thickness: 1.14...1.39mm
Produkt ist nicht verfügbar
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CPC1303GR CPC1303GR.pdf
CPC1303GR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 30V; SO4
Number of channels: 1
Mounting: SMD
Collector-emitter voltage: 30V
CTR@If: 200-2500%@0.2mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 2µs
Case: SO4
Turn-off time: 8µs
auf Bestellung 197 Stücke:
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AnzahlPrivatkunde
44+1.95 EUR
53+1.63 EUR
55+1.57 EUR
58+1.48 EUR
60+1.43 EUR
100+1.36 EUR
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IXYH20N65B3 media?resourcetype=datasheets&amp;itemid=1ada074a-a195-4f5e-bc03-b3cf3a2bd9e1&amp;filename=littelfuse_discrete_igbts_xpt_ixy_20n65b3_datasheet.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 58A; 230W; TO247-3
Mounting: THT
Pulsed collector current: 108A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 58A
Collector-emitter voltage: 650V
Power dissipation: 230W
Gate charge: 29nC
Produkt ist nicht verfügbar
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IXYH75N65C3H1 IXYH75N65C3H1.pdf
IXYH75N65C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Pulsed collector current: 360A
Produkt ist nicht verfügbar
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IXYH75N65C3 IXYH75N65C3.pdf
IXYH75N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Pulsed collector current: 360A
Produkt ist nicht verfügbar
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IXTP120N20X4 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixtp120n20x4-datasheet?assetguid=498447f2-cfa1-469a-ae0d-3e02c92edc63
IXTP120N20X4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X4-Class; N; 200V; 120A; 417W; TO220-3; 190ns
Reverse recovery time: 190ns
Mounting: THT
Power dissipation: 417W
Gate charge: 108nC
Polarisation: N
Technology: X4-Class
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: TO220-3
On-state resistance: 9.5mΩ
Produkt ist nicht verfügbar
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IXYT30N65C3H1HV IXY_30N65C3H1_HV.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXTA30N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; D2PAK-3
Type of transistor: N-MOSFET
Technology: X2-Class
Case: D2PAK-3
Mounting: SMD
Produkt ist nicht verfügbar
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IXXA30N65C3HV
IXXA30N65C3HV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 52A; 230W; D2PAK
Type of transistor: IGBT
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Collector current: 52A
Collector-emitter voltage: 650V
Pulsed collector current: 113A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXXH30N65B4 IXXH30N65B4.pdf
IXXH30N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXXH30N65B4D1 IXXH30N65B4D1.pdf
IXXH30N65B4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXXH30N65C4D1 IXXH30N65C4D1.pdf
IXXH30N65C4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 136A
Turn-on time: 65ns
Turn-off time: 161ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXYH30N65C3H1 IXY_30N65C3H1_HV.pdf
IXYH30N65C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXYP30N65C3 IXYH(P)30N65C3.pdf
IXYP30N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXTR140P10T IXTR140P10T.pdf
IXTR140P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -110A
Power dissipation: 270W
Case: ISOPLUS247™
Gate-source voltage: ±15V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Technology: TrenchP™
Produkt ist nicht verfügbar
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IXTA50N25T-TRL littelfuse-discrete-mosfets-ixt-50n25t-datasheet?assetguid=d7f19b2b-0219-4b0c-a29d-b093518ee586
IXTA50N25T-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 250V; 50A; 400W; D2PAK,TO263; 166ns
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 166ns
Produkt ist nicht verfügbar
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IXFH150N15P IXFH150N15P.pdf
IXFH150N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 150A; 714W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFH150N17T2 DS100229IXFHT150N17T2.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 175V; 150A; 880W; TO247-3; 160ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 175V
Drain current: 150A
Power dissipation: 880W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 233nC
Kind of channel: enhancement
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
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MCC255-14io1 LFPCN250210_Y1-screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 250A; Y1; Ufmax: 1.36V
Case: Y1
Gate current: 150/220mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 250A
Kind of package: bulk
Semiconductor structure: double series
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MCC255-16io1 MCC255-16IO1.pdf LFPCN250210_Y1-screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V
Case: Y1-CU
Max. forward impulse current: 7.82kA
Gate current: 150/220mA
Max. forward voltage: 1.08V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 250A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC255-12io1 LFPCN250210_Y1-screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 250A; Y1; Ufmax: 1.36V
Case: Y1
Gate current: 150/220mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 250A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC255-18io1 MCC255-18io1.pdf LFPCN250210_Y1-screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V
Case: Y1-CU
Max. forward impulse current: 7.82kA
Gate current: 150/220mA
Max. forward voltage: 1.08V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 250A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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IXTK120N65X2 IXT_120N65X2.pdf
IXTK120N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
On-state resistance: 23mΩ
Reverse recovery time: 505ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Technology: X2-Class
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO264
Produkt ist nicht verfügbar
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IXTK120N20P IXTK120N20P-DTE.pdf
IXTK120N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264
On-state resistance: 22mΩ
Reverse recovery time: 180ns
Mounting: THT
Power dissipation: 714W
Gate charge: 152nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
Produkt ist nicht verfügbar
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DSEP60-06A DSEP60-06A.pdf
DSEP60-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 600A; TO247-2; tube; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Max. forward impulse current: 0.6kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 1.39V
Reverse recovery time: 35ns
Technology: HiPerFRED™
Power dissipation: 330W
Features of semiconductor devices: fast switching
auf Bestellung 326 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
8+11.13 EUR
9+9.63 EUR
10+8.94 EUR
30+7.98 EUR
60+7.88 EUR
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DSEP60-06AT-TUB DSEP60-06AT.pdf
DSEP60-06AT-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 60A; 35ns; D3PAK; Ufmax: 1.39V; 330W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Max. forward impulse current: 0.6kA
Case: D3PAK
Max. forward voltage: 1.39V
Reverse recovery time: 35ns
Technology: HiPerFRED™
Power dissipation: 330W
Features of semiconductor devices: fast switching
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Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+12.15 EUR
Mindestbestellmenge: 7 Stücke
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DSEP60-06AZ-TRL dsep60-06az-datasheet?assetguid=67e17690-63b2-4b68-8e19-a7ef161d4ceb
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60A; 35ns; D3PAK,TO268AA; 2V; Ifsm: 600A
Type of diode: rectifying
Mounting: SMD
Load current: 60A
Max. forward impulse current: 0.6kA
Case: D3PAK; TO268AA
Kind of package: reel; tape
Max. forward voltage: 2V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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DSEP60-06AZ-TUB DSEP60-06AZ?assetguid=67e17690-63b2-4b68-8e19-a7ef161d4ceb
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60A; 35ns; D3PAK,TO268AA; 2V; Ifsm: 600A
Type of diode: rectifying
Mounting: SMD
Load current: 60A
Max. forward impulse current: 0.6kA
Case: D3PAK; TO268AA
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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DSEP60-12B littelfuse-power-semiconductors-dsep60-12b-datasheet?assetguid=d6424097-d31e-436f-a612-3acaffab9fed
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; Ifsm: 500A; TO247-2; tube; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward impulse current: 0.5kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 3.25V
Reverse recovery time: 65ns
Technology: FRED
Produkt ist nicht verfügbar
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IXGT25N160 IXGH(T)25N160.pdf
IXGT25N160
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXGA30N120B3 IXGA(H,P)30N120B3.pdf
IXGA30N120B3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO263
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: SMD
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+12.67 EUR
10+11.2 EUR
50+10.06 EUR
Mindestbestellmenge: 7 Stücke
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IXGP30N120B3 IXGA(H,P)30N120B3.pdf
IXGP30N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO220-3
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+13.84 EUR
Mindestbestellmenge: 7 Stücke
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IXGT30N120B3D1 IXGH(t)30N120B3D1.pdf
IXGT30N120B3D1
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO268
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: SMD
Produkt ist nicht verfügbar
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IXFN30N120P IXFN30N120P.pdf
IXFN30N120P
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 0.35Ω
Pulsed drain current: 75A
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Gate charge: 310nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
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IXYA30N120A3HV
IXYA30N120A3HV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Kind of package: tube
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: SMD
Produkt ist nicht verfügbar
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IXYA30N120A4HV littelfuse-discrete-igbts-ixy-30n120a4-datasheet?assetguid=9fce9f90-2af9-4a75-bf7f-be975fe328f4
IXYA30N120A4HV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 106A; 500W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 184A
Kind of package: tube
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 106A
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXGA30N120B3-TRL PdfFile261269.pdf
IXGA30N120B3-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 300W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Pulsed collector current: 150A
Kind of package: reel; tape
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 60A
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IXGH30N120B3D1 IXGH(t)30N120B3D1.pdf
IXGH30N120B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO247-3
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXYH30N120C3 IXY_30N120C3.pdf
IXYH30N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 69nC
Technology: GenX3™; XPT™
Pulsed collector current: 145A
Turn-on time: 71ns
Kind of package: tube
Case: TO247-3
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
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IXFB30N120P IXFB30N120P.pdf
IXFB30N120P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 0.35Ω
Power dissipation: 1.25kW
Gate charge: 310nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Kind of package: tube
Case: PLUS264™
Reverse recovery time: 300ns
Mounting: THT
Produkt ist nicht verfügbar
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IXGH30N120B3 littelfuse-discrete-igbts-ixg-30n120b3-datasheet?assetguid=cb0c0eda-e177-4166-a05f-e0899ba5bd64
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Pulsed collector current: 150A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 60A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXGH30N120C3H1 IXGH30N120C3H1.pdf
IXGH30N120C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 80nC
Technology: GenX3™; PT
Pulsed collector current: 115A
Turn-on time: 60ns
Kind of package: tube
Case: TO247-3
Turn-off time: 415ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: THT
Produkt ist nicht verfügbar
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IXYA30N120A4HV-TRL
IXYA30N120A4HV-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 500W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Kind of package: reel; tape
Case: TO263
Collector current: 30A
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IXYH30N120A4 littelfuse-discrete-igbts-ixy-30n120a4-datasheet?assetguid=9fce9f90-2af9-4a75-bf7f-be975fe328f4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 106A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 184A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 106A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXYH30N120B4 littelfuse-discrete-igbts-ixyh30n120b4-datasheet?assetguid=13438fd2-8a6e-4f3e-8fa7-b91305e3767c
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 100A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 58nC
Pulsed collector current: 174A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 100A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXYH30N120C3D1 IXYH30N120C3D1.pdf
IXYH30N120C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 416W
Gate charge: 69nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 133A
Turn-on time: 71ns
Kind of package: tube
Case: TO247-3
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXYH30N120C4 littelfuse-discrete-igbts-ixyh30n120c4-datasheet?assetguid=c7f20c7f-04a8-494d-a5d4-ff27e9de9932
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 94A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 166A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 94A
Mounting: THT
Produkt ist nicht verfügbar
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IXYH30N120C4H1 ixyh30n120c4h1?assetguid=25d3ae45-9a2b-4c95-83ec-2306b0257b09
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 55A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 166A
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 55A
Mounting: THT
Produkt ist nicht verfügbar
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IXYP30N120A4 littelfuse-discrete-igbts-ixy-30n120a4-datasheet?assetguid=9fce9f90-2af9-4a75-bf7f-be975fe328f4
IXYP30N120A4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 106A; 500W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 57nC
Pulsed collector current: 184A
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 106A
Mounting: THT
Produkt ist nicht verfügbar
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IXYP30N120B4
IXYP30N120B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1kV; 30A; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1kV
Kind of package: tube
Case: TO220AB
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
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IXYP30N120C3 IXY_30N120C3.pdf
IXYP30N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 500W
Gate charge: 69nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 145A
Turn-on time: 71ns
Kind of package: tube
Case: TO220-3
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
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IXYP30N120C4
IXYP30N120C4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Kind of package: tube
Case: TO220AB
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXA33IF1200HB IXA33IF1200HB.pdf
IXA33IF1200HB
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 76nC
Technology: Sonic FRD™; XPT™
Pulsed collector current: 75A
Turn-on time: 110ns
Kind of package: tube
Case: TO247-3
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 34A
Mounting: THT
Produkt ist nicht verfügbar
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IXDN614CI IXDD614CI-DTE.pdf
IXDN614CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 676 Stücke:
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AnzahlPrivatkunde
13+6.81 EUR
17+5.19 EUR
25+4.97 EUR
50+4.91 EUR
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CPC1709J CPC1709.pdf
CPC1709J
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 11000mA; max.60VDC; THT; ISOPLUS264™; OptoMOS
Mounting: THT
Control current max.: 100mA
On-state resistance: 50mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 60V DC
Case: ISOPLUS264™
Max. operating current: 11A
Turn-off time: 5ms
Produkt ist nicht verfügbar
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CLA110MB1200NA CLA110MB1200NA.pdf
CLA110MB1200NA
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT227B
Max. forward voltage: 1.04V
Max. forward impulse current: 935A
Gate current: 40/80mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 120 Stücke:
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3+31.27 EUR
Mindestbestellmenge: 3 Stücke
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MCC162-16io1 MCC162-16IO1.pdf PCN241015_Y4-M6 screw.pdf
MCC162-16io1
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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AnzahlPrivatkunde
1+108.84 EUR
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MCC95-12io1B MCC95-12IO1B-DTE.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC95-12io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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1+85.08 EUR
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MCC26-12io1B L073.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC26-12io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.64V
Max. forward impulse current: 560A
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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3+37.96 EUR
5+35.3 EUR
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DSEP29-06B Littelfuse-Power-Semiconductors-DSEP29-06B-Datasheet?assetguid=ee90203e-7c1e-47ff-b7dc-ff230a0cf920
DSEP29-06B
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 2.52V
Reverse recovery time: 25ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
Heatsink thickness: 1.14...1.39mm
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17+5.03 EUR
18+4.74 EUR
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DSEP29-06A DSEP29-06A.pdf
DSEP29-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO220AC; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.26V
Reverse recovery time: 35ns
Technology: HiPerFRED™
Power dissipation: 165W
Features of semiconductor devices: fast switching
Heatsink thickness: 1.14...1.39mm
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