auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 43.16 EUR |
| 10+ | 35.6 EUR |
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Technische Details IXFX24N100Q3 IXYS
Description: MOSFET N-CH 1000V 24A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 440mOhm @ 12A, 10V, Power Dissipation (Max): 1000W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 4mA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V.
Weitere Produktangebote IXFX24N100Q3 nach Preis ab 28.76 EUR bis 46.29 EUR
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IXFX24N100Q3 | Hersteller : IXYS |
Description: MOSFET N-CH 1000V 24A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 12A, 10V Power Dissipation (Max): 1000W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 4mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V |
auf Bestellung 480 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFX24N100Q3 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 1KV 24A 3-Pin(3+Tab) PLUS 247 |
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IXFX24N100Q3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 24A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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IXFX24N100Q3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 24A Power dissipation: 1kW Case: PLUS247™ On-state resistance: 440mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
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IXFX24N100Q3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 24A Power dissipation: 1kW Case: PLUS247™ On-state resistance: 440mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |