IXFN24N100
Produktcode: 101787
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Lieblingsprodukt
Hersteller:
ZCODE: 8541290010
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Technische Details IXFN24N100
- MOSFET, N, SOT-227B
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:1000V
- Cont Current Id:24A
- On State Resistance:0.39ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:5.5V
- Case Style:ISOTOP
- Termination Type:Screw
- Avalanche Single Pulse Energy Eas:3J
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- Isolation voltage:2500V
- Max Junction Temperature Tj:150`C
- Max On State Resistance:0.39ohm
- Max Repetitive Avalanche Energy:60mJ
- Max Voltage Vds:1000V
- Max Voltage Vgs th:5V
- Min Junction Temperature, Tj:-55`C
- No. of Transistors:1
- Power Dissipation:600W
- Power Dissipation Pd:600W
- Pulse Current Idm:96A
- Rate of Voltage Change dv / dt:5V/es
- Typ Reverse Recovery Time, trr:250ns
- Weight:0.04kg
- Transistor Case Style:ISOTOP
Weitere Produktangebote IXFN24N100 nach Preis ab 66.26 EUR bis 89.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
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IXFN24N100 | Hersteller : IXYS |
MOSFET Modules 1KV 24A |
auf Bestellung 203 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN24N100 | Hersteller : IXYS SEMICONDUCTOR |
Description: IXYS SEMICONDUCTOR - IXFN24N100 - MOSFET-Transistor, n-Kanal, 24 A, 1 kV, 0.39 ohm, 10 V, 5.5 V tariffCode: 85412900 Transistormontage: Modul Drain-Source-Spannung Vds: 1kV rohsCompliant: YES Dauer-Drainstrom Id: 24A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.5V euEccn: NLR Verlustleistung: 600W Bauform - Transistor: ISOTOP Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.39ohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXFN24N100 |
MOSFET N-CH 1KV 24A SOT-227B Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IXFN24N100 | Hersteller : IXYS |
Description: MOSFET N-CH 1KV 24A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V Power Dissipation (Max): 568W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFN24N100 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 24A Pulsed drain current: 96A Power dissipation: 568W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 390mΩ Gate charge: 250nC Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |