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IXFH16N50P3 IXFH16N50P3 IXYS IXF_16N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
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IXTA16N50P IXTA16N50P IXYS IXTP16N50P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
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IXTQ16N50P IXTQ16N50P IXYS IXTP16N50P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
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IXTH32N65X IXTH32N65X IXYS IXTH(P,Q)32N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: ultra junction x-class
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IXTP2N65X2 IXTP2N65X2 IXYS IXTP(Y)2N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
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IXTA60N20T IXTA60N20T IXYS IXTA(P,Q)60N20T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO263; 118ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 500W
Case: TO263
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 118ns
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IXTT60N20L2 IXTT60N20L2 IXYS IXTH(T,Q)60N20L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO268; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
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IXTQ60N20L2 IXTQ60N20L2 IXYS IXTH(T,Q)60N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO3P
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
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MCMA110P1200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXFH110N10P IXFH110N10P IXYS IXFH110N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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IXTH110N10L2 IXTH110N10L2 IXYS IXTH(T)110N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 230ns
Features of semiconductor devices: linear power mosfet
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IXTT110N10L2 IXTT110N10L2 IXYS IXTH(T)110N10L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 230ns
Features of semiconductor devices: linear power mosfet
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IXTQ110N10P IXTQ110N10P IXYS IXTQ110N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
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IXTT110N10P IXTT110N10P IXYS IXTQ110N10P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
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IXA30RG1200DHGLB IXA30RG1200DHGLB IXYS IXA30RG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Topology: boost chopper
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Technology: ISOPLUS™; Sonic FRD™
Electrical mounting: SMT
Case: SMPD-B
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 75A
Power dissipation: 147W
Max. off-state voltage: 1.2kV
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IXA20PG1200DHGLB IXA20PG1200DHGLB IXYS IXA20PG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Topology: IGBT half-bridge
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Technology: ISOPLUS™; Sonic FRD™
Electrical mounting: SMT
Case: SMPD-B
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Power dissipation: 130W
Max. off-state voltage: 1.2kV
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IXTA230N04T4 IXTA230N04T4 IXYS IXTA(P)230N04T4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
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IXTP230N04T4 IXTP230N04T4 IXYS IXTA(P)230N04T4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO220AB; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO220AB
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
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IXTP230N04T4M IXTP230N04T4M IXYS IXTP230N04T4M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
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CLA100E1200KB CLA100E1200KB IXYS CLA100E1200KB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 160A
Load current: 100A
Gate current: 80mA
Case: TO264
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.19kA
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MDMA660U1600PTEH MDMA660U1600PTEH IXYS MDMA660U1600PTEH.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Electrical mounting: Press-Fit
Version: module
Mechanical mounting: screw
Type of bridge rectifier: three-phase
Max. forward impulse current: 5kA
Load current: 660A
Max. off-state voltage: 1.6kV
Case: E3-Pack
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IXA17IF1200HJ IXA17IF1200HJ IXYS IXA17IF1200HJ.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 18A; 100W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 47nC
Turn-on time: 110ns
Turn-off time: 350ns
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 100W
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
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IXFH160N15T2 IXFH160N15T2 IXYS IXFH160N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Case: TO247-3
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: tube
Gate charge: 253nC
On-state resistance: 9mΩ
Drain current: 160A
Power dissipation: 880W
Drain-source voltage: 150V
Kind of channel: enhancement
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IXFK360N15T2 IXFK360N15T2 IXYS IXFK(X)360N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of package: tube
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Kind of channel: enhancement
Gate-source voltage: ±20V
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IXFX360N15T2 IXFX360N15T2 IXYS IXFK(X)360N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Case: PLUS247™
Mounting: THT
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of package: tube
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Kind of channel: enhancement
Gate-source voltage: ±20V
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MMIX1H60N150V1 IXYS MMIX1H60N150V1.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
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MMIX1F360N15T2 IXYS media?resourcetype=datasheets&itemid=D974702A-D102-455F-98DF-8C5F7606CE98&filename=littelfuse-discrete-mosfets-n-channel-trench-gate-mmix1f360n15t2-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4.4mΩ
Drain current: 235A
Power dissipation: 680W
Drain-source voltage: 150V
Pulsed drain current: 900A
Kind of channel: enhancement
Gate-source voltage: ±20V
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IXGP20N120A3 IXGP20N120A3 IXYS IXG_20N120A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Technology: GenX3™; PT
Turn-on time: 66ns
Turn-off time: 1.53µs
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IXGP20N120B3 IXGP20N120B3 IXYS IXGA(P)20N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Technology: GenX3™; PT
Turn-on time: 61ns
Turn-off time: 720ns
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DSS40-0008D DSS40-0008D IXYS DSS40-0008D.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40A; TO247-3; Ufmax: 0.23V
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 0.23V
Max. forward impulse current: 0.6kA
Kind of package: tube
Power dissipation: 155W
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VUO86-16NO7 VUO86-16NO7 IXYS VUO86-16NO7.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 86A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.51V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
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MIXG330PF1200PTSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: X2PT
Max. off-state voltage: 1.2kV
Case: SimBus F
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MIXG330PF1200TSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: X2PT
Max. off-state voltage: 1.2kV
Case: SimBus F
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IXFH54N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh54n65x3-datasheet?assetguid=72e478f6-5b56-48fd-b5ac-2dc7d5bb4639 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: HiPerFET™; X3-Class
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IXFB60N80P IXFB60N80P IXYS IXFB60N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
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IXFL60N80P IXFL60N80P IXYS IXFL60N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 40A
Power dissipation: 625W
Case: ISOPLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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DSA240X150NA DSA240X150NA IXYS DSA240X150NA.pdf Category: Diode modules
Description: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw
Electrical mounting: screw
Max. forward voltage: 0.85V
Load current: 120A x2
Max. off-state voltage: 150V
Max. forward impulse current: 1.6kA
Max. load current: 120A
Semiconductor structure: double independent
Type of semiconductor module: diode
Case: SOT227B
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Produkt ist nicht verfügbar
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IX4426N IX4426N IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Number of channels: 2
Output current: -1.5...1.5A
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91+0.79 EUR
103+0.7 EUR
104+0.69 EUR
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IX4426MTR IX4426MTR IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Number of channels: 2
Output current: -1.5...1.5A
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IX4426NTR IX4426NTR IXYS littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Produkt ist nicht verfügbar
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CPC1972G CPC1972G IXYS CPC1972.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1972GS CPC1972GS IXYS CPC1972.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
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CPC1972GSTR IXYS CPC1972.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXTA380N036T4-7 IXTA380N036T4-7 IXYS IXTA380N036T4-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 54ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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CPC1017NTR CPC1017NTR IXYS CPC1017N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 60V DC; max. 600V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXFB62N80Q3 IXFB62N80Q3 IXYS IXFB62N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 800V; 62A; 1560W; 300ns
Case: PLUS264™
Mounting: THT
Kind of package: tube
Gate charge: 0.27µC
Reverse recovery time: 300ns
On-state resistance: 0.14Ω
Drain current: 62A
Power dissipation: 1.56kW
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IXFK32N80Q3 IXFK32N80Q3 IXYS IXFK(X)32N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 0.14µC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 1kW
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 22 Stücke:
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3+29.07 EUR
10+26.05 EUR
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IXFR32N80P IXFR32N80P IXYS IXFR32N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 150nC
On-state resistance: 0.29Ω
Drain current: 20A
Power dissipation: 300W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXFN32N80P IXFN32N80P IXYS IXFN32N80P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; SOT227B; screw; Idm: 250A
Case: SOT227B
Gate charge: 150nC
Reverse recovery time: 250ns
On-state resistance: 0.27Ω
Drain current: 29A
Pulsed drain current: 250A
Power dissipation: 625W
Gate-source voltage: ±40V
Drain-source voltage: 800V
Kind of channel: enhancement
Technology: HiPerFET™; PolarHV™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXFK32N80P IXFK32N80P IXYS IXFK(X)32N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 150nC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 830W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXFX32N80Q3 IXFX32N80Q3 IXYS IXFK(X)32N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 0.14µC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 1kW
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXFN62N80Q3 IXFN62N80Q3 IXYS IXFN62N80Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 49A; SOT227B; screw; Idm: 180A
Case: SOT227B
Gate charge: 0.27µC
Reverse recovery time: 300ns
On-state resistance: 0.14Ω
Drain current: 49A
Pulsed drain current: 180A
Power dissipation: 960W
Gate-source voltage: ±40V
Drain-source voltage: 800V
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXFR32N80Q3 IXFR32N80Q3 IXYS IXFR32N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 500W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 0.14µC
On-state resistance: 0.3Ω
Drain current: 24A
Power dissipation: 500W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXFX32N80P IXFX32N80P IXYS IXFK(X)32N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 150nC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 830W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXFB52N90P IXFB52N90P IXYS IXFB52N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Polarisation: unipolar
Gate charge: 308nC
Reverse recovery time: 300ns
On-state resistance: 0.16Ω
Drain current: 52A
Gate-source voltage: ±30V
Power dissipation: 1.25kW
Drain-source voltage: 900V
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IXFN52N90P IXFN52N90P IXYS IXFN52N90P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Polarisation: unipolar
Gate charge: 308nC
Reverse recovery time: 300ns
On-state resistance: 0.16Ω
Drain current: 43A
Pulsed drain current: 104A
Gate-source voltage: ±40V
Power dissipation: 890W
Drain-source voltage: 900V
Case: SOT227B
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXFH12N90P IXFH12N90P IXYS IXFH(V)12N90P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Polarisation: unipolar
Gate charge: 56nC
On-state resistance: 1Ω
Drain current: 12A
Power dissipation: 380W
Drain-source voltage: 900V
Case: TO247-3
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IXFK32N90P IXFK32N90P IXYS IXFK(X)32N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 0.3Ω
Drain current: 32A
Power dissipation: 960W
Drain-source voltage: 900V
Case: TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IXFX32N90P IXFX32N90P IXYS IXFK(X)32N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 0.3Ω
Drain current: 32A
Power dissipation: 960W
Drain-source voltage: 900V
Case: PLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IXGR32N90B2D1 IXGR32N90B2D1 IXYS IXGR32N90B2D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Gate charge: 89nC
Turn-on time: 42ns
Turn-off time: 690ns
Gate-emitter voltage: ±20V
Collector current: 22A
Power dissipation: 160W
Pulsed collector current: 200A
Collector-emitter voltage: 900V
Case: PLUS247™
Technology: HiPerFAST™; PT
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IXFH16N50P3 IXF_16N50P3.pdf
IXFH16N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
Produkt ist nicht verfügbar
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IXTA16N50P IXTP16N50P-DTE.pdf
IXTA16N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
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IXTQ16N50P IXTP16N50P-DTE.pdf
IXTQ16N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
Produkt ist nicht verfügbar
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IXTH32N65X IXTH(P,Q)32N65X.pdf
IXTH32N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 147 Stücke:
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Anzahl Preis
9+8.45 EUR
10+7.61 EUR
11+6.72 EUR
30+6.03 EUR
Mindestbestellmenge: 9
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IXTP2N65X2 IXTP(Y)2N65X2.pdf
IXTP2N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
Produkt ist nicht verfügbar
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IXTA60N20T IXTA(P,Q)60N20T.pdf
IXTA60N20T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO263; 118ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 500W
Case: TO263
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 118ns
Produkt ist nicht verfügbar
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IXTT60N20L2 IXTH(T,Q)60N20L2.pdf
IXTT60N20L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO268; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
Produkt ist nicht verfügbar
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IXTQ60N20L2 IXTH(T,Q)60N20L2.pdf
IXTQ60N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO3P
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
Produkt ist nicht verfügbar
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MCMA110P1200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFH110N10P IXFH110N10P.pdf
IXFH110N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.67 EUR
10+7.44 EUR
11+6.76 EUR
20+6.06 EUR
30+5.65 EUR
120+5.62 EUR
Mindestbestellmenge: 9
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IXTH110N10L2 IXTH(T)110N10L2.pdf
IXTH110N10L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 230ns
Features of semiconductor devices: linear power mosfet
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IXTT110N10L2 IXTH(T)110N10L2.pdf
IXTT110N10L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 230ns
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXTQ110N10P IXTQ110N10P-DTE.pdf
IXTQ110N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
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IXTT110N10P IXTQ110N10P-DTE.pdf
IXTT110N10P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
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IXA30RG1200DHGLB IXA30RG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf
IXA30RG1200DHGLB
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Topology: boost chopper
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Technology: ISOPLUS™; Sonic FRD™
Electrical mounting: SMT
Case: SMPD-B
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 75A
Power dissipation: 147W
Max. off-state voltage: 1.2kV
auf Bestellung 39 Stücke:
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Anzahl Preis
9+8.08 EUR
10+7.65 EUR
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IXA20PG1200DHGLB IXA20PG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf
IXA20PG1200DHGLB
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Topology: IGBT half-bridge
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Technology: ISOPLUS™; Sonic FRD™
Electrical mounting: SMT
Case: SMPD-B
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Power dissipation: 130W
Max. off-state voltage: 1.2kV
auf Bestellung 29 Stücke:
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Anzahl Preis
6+11.97 EUR
10+10.81 EUR
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IXTA230N04T4 IXTA(P)230N04T4.pdf
IXTA230N04T4
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
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IXTP230N04T4 IXTA(P)230N04T4.pdf
IXTP230N04T4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO220AB; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO220AB
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
Produkt ist nicht verfügbar
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IXTP230N04T4M IXTP230N04T4M.pdf
IXTP230N04T4M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
Produkt ist nicht verfügbar
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CLA100E1200KB CLA100E1200KB.pdf
CLA100E1200KB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 160A
Load current: 100A
Gate current: 80mA
Case: TO264
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.19kA
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.04 EUR
10+7.78 EUR
25+7.62 EUR
Mindestbestellmenge: 8
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MDMA660U1600PTEH MDMA660U1600PTEH.pdf
MDMA660U1600PTEH
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Electrical mounting: Press-Fit
Version: module
Mechanical mounting: screw
Type of bridge rectifier: three-phase
Max. forward impulse current: 5kA
Load current: 660A
Max. off-state voltage: 1.6kV
Case: E3-Pack
auf Bestellung 17 Stücke:
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Anzahl Preis
1+284.43 EUR
3+254.83 EUR
5+225.22 EUR
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IXA17IF1200HJ IXA17IF1200HJ.pdf
IXA17IF1200HJ
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 18A; 100W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 47nC
Turn-on time: 110ns
Turn-off time: 350ns
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 100W
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IXFH160N15T2 IXFH160N15T2.pdf
IXFH160N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Case: TO247-3
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: tube
Gate charge: 253nC
On-state resistance: 9mΩ
Drain current: 160A
Power dissipation: 880W
Drain-source voltage: 150V
Kind of channel: enhancement
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.22 EUR
30+7.49 EUR
Mindestbestellmenge: 8
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IXFK360N15T2 IXFK(X)360N15T2.pdf
IXFK360N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of package: tube
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IXFX360N15T2 IXFK(X)360N15T2.pdf
IXFX360N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Case: PLUS247™
Mounting: THT
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of package: tube
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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MMIX1H60N150V1 MMIX1H60N150V1.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Produkt ist nicht verfügbar
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MMIX1F360N15T2 media?resourcetype=datasheets&itemid=D974702A-D102-455F-98DF-8C5F7606CE98&filename=littelfuse-discrete-mosfets-n-channel-trench-gate-mmix1f360n15t2-datasheet
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4.4mΩ
Drain current: 235A
Power dissipation: 680W
Drain-source voltage: 150V
Pulsed drain current: 900A
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IXGP20N120A3 IXG_20N120A3.pdf
IXGP20N120A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Technology: GenX3™; PT
Turn-on time: 66ns
Turn-off time: 1.53µs
auf Bestellung 16 Stücke:
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Anzahl Preis
8+9.52 EUR
Mindestbestellmenge: 8
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IXGP20N120B3 IXGA(P)20N120B3.pdf
IXGP20N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Technology: GenX3™; PT
Turn-on time: 61ns
Turn-off time: 720ns
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.35 EUR
Mindestbestellmenge: 8
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DSS40-0008D DSS40-0008D.pdf
DSS40-0008D
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40A; TO247-3; Ufmax: 0.23V
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 0.23V
Max. forward impulse current: 0.6kA
Kind of package: tube
Power dissipation: 155W
Produkt ist nicht verfügbar
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VUO86-16NO7 VUO86-16NO7.pdf
VUO86-16NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 86A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.51V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MIXG330PF1200PTSF
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: X2PT
Max. off-state voltage: 1.2kV
Case: SimBus F
Produkt ist nicht verfügbar
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MIXG330PF1200TSF
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: X2PT
Max. off-state voltage: 1.2kV
Case: SimBus F
Produkt ist nicht verfügbar
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IXFH54N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh54n65x3-datasheet?assetguid=72e478f6-5b56-48fd-b5ac-2dc7d5bb4639
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXFB60N80P IXFB60N80P.pdf
IXFB60N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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IXFL60N80P IXFL60N80P.pdf
IXFL60N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 40A
Power dissipation: 625W
Case: ISOPLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
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DSA240X150NA DSA240X150NA.pdf
DSA240X150NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw
Electrical mounting: screw
Max. forward voltage: 0.85V
Load current: 120A x2
Max. off-state voltage: 150V
Max. forward impulse current: 1.6kA
Max. load current: 120A
Semiconductor structure: double independent
Type of semiconductor module: diode
Case: SOT227B
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Produkt ist nicht verfügbar
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IX4426N IX4426-27-28.pdf
IX4426N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Number of channels: 2
Output current: -1.5...1.5A
auf Bestellung 1041 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
91+0.79 EUR
103+0.7 EUR
104+0.69 EUR
Mindestbestellmenge: 66
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IX4426MTR IX4426-27-28.pdf
IX4426MTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Number of channels: 2
Output current: -1.5...1.5A
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
85+0.85 EUR
90+0.8 EUR
Mindestbestellmenge: 61
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IX4426NTR littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250
IX4426NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Produkt ist nicht verfügbar
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CPC1972G CPC1972.pdf
CPC1972G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1972GS CPC1972.pdf
CPC1972GS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1972GSTR CPC1972.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXTA380N036T4-7 IXTA380N036T4-7.pdf
IXTA380N036T4-7
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 54ns
Features of semiconductor devices: thrench gate power mosfet
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CPC1017NTR CPC1017N.pdf
CPC1017NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 60V DC; max. 600V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXFB62N80Q3 IXFB62N80Q3.pdf
IXFB62N80Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 800V; 62A; 1560W; 300ns
Case: PLUS264™
Mounting: THT
Kind of package: tube
Gate charge: 0.27µC
Reverse recovery time: 300ns
On-state resistance: 0.14Ω
Drain current: 62A
Power dissipation: 1.56kW
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXFK32N80Q3 IXFK(X)32N80Q3.pdf
IXFK32N80Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 0.14µC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 1kW
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.07 EUR
10+26.05 EUR
Mindestbestellmenge: 3
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IXFR32N80P IXFR32N80P.pdf
IXFR32N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 150nC
On-state resistance: 0.29Ω
Drain current: 20A
Power dissipation: 300W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXFN32N80P IXFN32N80P.pdf
IXFN32N80P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; SOT227B; screw; Idm: 250A
Case: SOT227B
Gate charge: 150nC
Reverse recovery time: 250ns
On-state resistance: 0.27Ω
Drain current: 29A
Pulsed drain current: 250A
Power dissipation: 625W
Gate-source voltage: ±40V
Drain-source voltage: 800V
Kind of channel: enhancement
Technology: HiPerFET™; PolarHV™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXFK32N80P IXFK(X)32N80P.pdf
IXFK32N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 150nC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 830W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXFX32N80Q3 IXFK(X)32N80Q3.pdf
IXFX32N80Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 0.14µC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 1kW
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXFN62N80Q3 IXFN62N80Q3.pdf
IXFN62N80Q3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 49A; SOT227B; screw; Idm: 180A
Case: SOT227B
Gate charge: 0.27µC
Reverse recovery time: 300ns
On-state resistance: 0.14Ω
Drain current: 49A
Pulsed drain current: 180A
Power dissipation: 960W
Gate-source voltage: ±40V
Drain-source voltage: 800V
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXFR32N80Q3 IXFR32N80Q3.pdf
IXFR32N80Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 500W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 0.14µC
On-state resistance: 0.3Ω
Drain current: 24A
Power dissipation: 500W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXFX32N80P IXFK(X)32N80P.pdf
IXFX32N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 150nC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 830W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXFB52N90P IXFB52N90P.pdf
IXFB52N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Polarisation: unipolar
Gate charge: 308nC
Reverse recovery time: 300ns
On-state resistance: 0.16Ω
Drain current: 52A
Gate-source voltage: ±30V
Power dissipation: 1.25kW
Drain-source voltage: 900V
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IXFN52N90P IXFN52N90P.pdf
IXFN52N90P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Polarisation: unipolar
Gate charge: 308nC
Reverse recovery time: 300ns
On-state resistance: 0.16Ω
Drain current: 43A
Pulsed drain current: 104A
Gate-source voltage: ±40V
Power dissipation: 890W
Drain-source voltage: 900V
Case: SOT227B
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXFH12N90P IXFH(V)12N90P_S.pdf
IXFH12N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Polarisation: unipolar
Gate charge: 56nC
On-state resistance: 1Ω
Drain current: 12A
Power dissipation: 380W
Drain-source voltage: 900V
Case: TO247-3
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IXFK32N90P IXFK(X)32N90P.pdf
IXFK32N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 0.3Ω
Drain current: 32A
Power dissipation: 960W
Drain-source voltage: 900V
Case: TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IXFX32N90P IXFK(X)32N90P.pdf
IXFX32N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 0.3Ω
Drain current: 32A
Power dissipation: 960W
Drain-source voltage: 900V
Case: PLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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IXGR32N90B2D1 IXGR32N90B2D1.pdf
IXGR32N90B2D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Gate charge: 89nC
Turn-on time: 42ns
Turn-off time: 690ns
Gate-emitter voltage: ±20V
Collector current: 22A
Power dissipation: 160W
Pulsed collector current: 200A
Collector-emitter voltage: 900V
Case: PLUS247™
Technology: HiPerFAST™; PT
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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