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LBA110STR IXYS LBA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LBA110PTR IXYS LBA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LBA110LSTR IXYS LBA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LBA110PLTR IXYS LBA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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IXHX40N150V1HV IXHX40N150V1HV IXYS IXHX40N150V1HV.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Type of thyristor: thyristor
Max. forward impulse current: 7.6kA
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IXHH40N150HV IXHH40N150HV IXYS IXHH40N150HV.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247HV; THT; tube; 7.6kA
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Type of thyristor: thyristor
Max. forward impulse current: 7.6kA
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IXFN240N15T2 IXFN240N15T2 IXYS IXFN240N15T2.pdf Category: Transistor modules
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Pulsed drain current: 600A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 5.2mΩ
Gate charge: 460nC
Kind of channel: enhancement
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 140ns
Type of semiconductor module: MOSFET transistor
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IXTH240N15X4 IXTH240N15X4 IXYS IXTH240N15X4_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 130ns
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IXFX240N15T2 IXFX240N15T2 IXYS IXFK(X)240N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXFK240N15T2 IXFK240N15T2 IXYS IXFK(X)240N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 240A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Reverse recovery time: 140ns
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IXFH240N15X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_240n15x3_datasheet.pdf?assetguid=db0daa8a-a090-4544-9e9a-0eaae950088b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 240A; Idm: 420A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Pulsed drain current: 420A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 97ns
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MMJX1H40N150 IXYS MMJX1H40N150.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 15.5kA
Case: SMPD
Mounting: SMD
Features of semiconductor devices: Kelvin terminal; MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Type of thyristor: thyristor
Max. forward impulse current: 15.5kA
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LCB710 LCB710 IXYS LCB710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LCB710STR IXYS LCB710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXFN32N120P IXFN32N120P IXYS IXFN32N120P.pdf Category: Transistor modules
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 32A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.31Ω
Pulsed drain current: 100A
Power dissipation: 1kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 360nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
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IXTA3N100P-TRL IXTA3N100P-TRL IXYS littelfuse-discrete-mosfets-ixt-3n100p-datasheet?assetguid=ec56a47a-d10f-43fa-8e9e-e6b982b889df Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 3A; 125W; D2PAK,TO263; 820ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 4.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Reverse recovery time: 820ns
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IXTA3N100D2-TRL IXTA3N100D2-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 3A; 125W; D2PAK,TO263; 970ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 37.5nC
Reverse recovery time: 970ns
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IXTA3N100D2HV-TRL IXTA3N100D2HV-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 3A; 125W; D2PAK,TO263; 970ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 37.5nC
Reverse recovery time: 970ns
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CLA60PD1200NA CLA60PD1200NA IXYS CLA60PD1200NA.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Max. forward impulse current: 935A
Gate current: 40/80mA
Max. forward voltage: 1.09V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 60A
Max. load current: 94A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.79V
Case: SOT227B
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MCMA25PD1200TB IXYS MCMA25PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 25A; TO240AA; Ufmax: 1.25V; bulk
Gate current: 55/80mA
Max. forward voltage: 1.25V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 25A
Max. load current: 40A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.87V
Case: TO240AA
Max. forward impulse current: 0.4kA
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MCMA65PD1200TB IXYS MCMA65PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Gate current: 95/200mA
Max. forward voltage: 1.17V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 65A
Max. load current: 105A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 1.15kA
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MCMA140PD1200TB IXYS MCMA140PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Gate current: 150/200mA
Max. forward voltage: 1.28V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 140A
Max. load current: 220A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 2.4kA
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MCMA110PD1200TB IXYS MCMA110PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Gate current: 150/200mA
Max. forward voltage: 1.21V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 110A
Max. load current: 170A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 1.9kA
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MCMA35PD1200TB IXYS MCMA35PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Gate current: 78/200mA
Max. forward voltage: 1.22V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 35A
Max. load current: 55A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.87V
Case: TO240AA
Max. forward impulse current: 520A
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MCMA50PD1200TB IXYS MCMA50PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 50A; TO240AA; Ufmax: 1.17V; bulk
Gate current: 78/200mA
Max. forward voltage: 1.17V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 50A
Max. load current: 79A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.89V
Case: TO240AA
Max. forward impulse current: 0.8kA
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MCMA85PD1200TB IXYS MCMA85PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.18V; bulk
Gate current: 95/200mA
Max. forward voltage: 1.18V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 85A
Max. load current: 135A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 1.5kA
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CPC3980ZTR CPC3980ZTR IXYS CPC3980.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
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DSEI60-06A DSEI60-06A IXYS DSEI60-06A.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 550A; TO247-2; tube; 166W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.55kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 1.5V
Power dissipation: 166W
Reverse recovery time: 35ns
Technology: FRED
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DSEI60-10A DSEI60-10A IXYS DSEI60-10A.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; Ifsm: 500A; TO247-2; tube; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.5kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 1.8V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
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CPC1303GR CPC1303GR IXYS CPC1303GR.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 30V; SO4
Number of channels: 1
Mounting: SMD
Collector-emitter voltage: 30V
CTR@If: 200-2500%@0.2mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 2µs
Case: SO4
Turn-off time: 8µs
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53+1.63 EUR
55+1.57 EUR
58+1.48 EUR
60+1.43 EUR
100+1.36 EUR
200+1.31 EUR
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IXYH20N65B3 IXYS media?resourcetype=datasheets&amp;itemid=1ada074a-a195-4f5e-bc03-b3cf3a2bd9e1&amp;filename=littelfuse_discrete_igbts_xpt_ixy_20n65b3_datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 58A; 230W; TO247-3
Mounting: THT
Pulsed collector current: 108A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 58A
Collector-emitter voltage: 650V
Power dissipation: 230W
Gate charge: 29nC
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IXYH75N65C3H1 IXYH75N65C3H1 IXYS IXYH75N65C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Pulsed collector current: 360A
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IXYH75N65C3 IXYH75N65C3 IXYS IXYH75N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Pulsed collector current: 360A
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IXTP120N20X4 IXTP120N20X4 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixtp120n20x4-datasheet?assetguid=498447f2-cfa1-469a-ae0d-3e02c92edc63 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X4-Class; N; 200V; 120A; 417W; TO220-3; 190ns
Reverse recovery time: 190ns
Mounting: THT
Power dissipation: 417W
Gate charge: 108nC
Polarisation: N
Technology: X4-Class
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: TO220-3
On-state resistance: 9.5mΩ
Produkt ist nicht verfügbar
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IXYT30N65C3H1HV IXYS IXY_30N65C3H1_HV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXTA30N65X2 IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; D2PAK-3
Type of transistor: N-MOSFET
Technology: X2-Class
Case: D2PAK-3
Mounting: SMD
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IXXA30N65C3HV IXXA30N65C3HV IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 52A; 230W; D2PAK
Type of transistor: IGBT
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Collector current: 52A
Collector-emitter voltage: 650V
Pulsed collector current: 113A
Gate-emitter voltage: ±20V
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IXXH30N65B4 IXXH30N65B4 IXYS IXXH30N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXXH30N65B4D1 IXXH30N65B4D1 IXYS IXXH30N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXXH30N65C4D1 IXXH30N65C4D1 IXYS IXXH30N65C4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 136A
Turn-on time: 65ns
Turn-off time: 161ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXYH30N65C3H1 IXYH30N65C3H1 IXYS IXY_30N65C3H1_HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXYP30N65C3 IXYP30N65C3 IXYS IXYH(P)30N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXTR140P10T IXTR140P10T IXYS IXTR140P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -110A
Power dissipation: 270W
Case: ISOPLUS247™
Gate-source voltage: ±15V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Technology: TrenchP™
Produkt ist nicht verfügbar
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IXTA50N25T-TRL IXTA50N25T-TRL IXYS littelfuse-discrete-mosfets-ixt-50n25t-datasheet?assetguid=d7f19b2b-0219-4b0c-a29d-b093518ee586 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 250V; 50A; 400W; D2PAK,TO263; 166ns
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 166ns
Produkt ist nicht verfügbar
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IXFH150N15P IXFH150N15P IXYS IXFH150N15P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 150A; 714W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFH150N17T2 IXYS DS100229IXFHT150N17T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; 175V; 150A; 880W; TO247-3; 160ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 175V
Drain current: 150A
Power dissipation: 880W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 233nC
Kind of channel: enhancement
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
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MCC255-14io1 IXYS LFPCN250210_Y1-screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 250A; Y1; Ufmax: 1.36V
Case: Y1
Gate current: 150/220mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 250A
Kind of package: bulk
Semiconductor structure: double series
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MCC255-16io1 IXYS MCC255-16IO1.pdf LFPCN250210_Y1-screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V
Case: Y1-CU
Max. forward impulse current: 7.82kA
Gate current: 150/220mA
Max. forward voltage: 1.08V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 250A
Kind of package: bulk
Semiconductor structure: double series
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MCC255-12io1 IXYS LFPCN250210_Y1-screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 250A; Y1; Ufmax: 1.36V
Case: Y1
Gate current: 150/220mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 250A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC255-18io1 IXYS MCC255-18io1.pdf LFPCN250210_Y1-screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V
Case: Y1-CU
Max. forward impulse current: 7.82kA
Gate current: 150/220mA
Max. forward voltage: 1.08V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 250A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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IXTK120N65X2 IXTK120N65X2 IXYS IXT_120N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
On-state resistance: 23mΩ
Reverse recovery time: 505ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Technology: X2-Class
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO264
Produkt ist nicht verfügbar
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IXTK120N20P IXTK120N20P IXYS IXTK120N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264
On-state resistance: 22mΩ
Reverse recovery time: 180ns
Mounting: THT
Power dissipation: 714W
Gate charge: 152nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
Produkt ist nicht verfügbar
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DSEP60-06A DSEP60-06A IXYS DSEP60-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 600A; TO247-2; tube; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Max. forward impulse current: 0.6kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 1.39V
Reverse recovery time: 35ns
Technology: HiPerFRED™
Power dissipation: 330W
Features of semiconductor devices: fast switching
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30+7.98 EUR
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DSEP60-06AT-TUB DSEP60-06AT-TUB IXYS DSEP60-06AT.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 60A; 35ns; D3PAK; Ufmax: 1.39V; 330W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Max. forward impulse current: 0.6kA
Case: D3PAK
Max. forward voltage: 1.39V
Reverse recovery time: 35ns
Technology: HiPerFRED™
Power dissipation: 330W
Features of semiconductor devices: fast switching
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DSEP60-06AZ-TRL IXYS dsep60-06az-datasheet?assetguid=67e17690-63b2-4b68-8e19-a7ef161d4ceb Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60A; 35ns; D3PAK,TO268AA; 2V; Ifsm: 600A
Type of diode: rectifying
Mounting: SMD
Load current: 60A
Max. forward impulse current: 0.6kA
Case: D3PAK; TO268AA
Kind of package: reel; tape
Max. forward voltage: 2V
Reverse recovery time: 35ns
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DSEP60-06AZ-TUB IXYS DSEP60-06AZ?assetguid=67e17690-63b2-4b68-8e19-a7ef161d4ceb Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60A; 35ns; D3PAK,TO268AA; 2V; Ifsm: 600A
Type of diode: rectifying
Mounting: SMD
Load current: 60A
Max. forward impulse current: 0.6kA
Case: D3PAK; TO268AA
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 35ns
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DSEP60-12B IXYS littelfuse-power-semiconductors-dsep60-12b-datasheet?assetguid=d6424097-d31e-436f-a612-3acaffab9fed Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; Ifsm: 500A; TO247-2; tube; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward impulse current: 0.5kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 3.25V
Reverse recovery time: 65ns
Technology: FRED
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IXGT25N160 IXGT25N160 IXYS IXGH(T)25N160.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
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IXGA30N120B3 IXGA30N120B3 IXYS IXGA(H,P)30N120B3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO263
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: SMD
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IXGP30N120B3 IXGP30N120B3 IXYS IXGA(H,P)30N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO220-3
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
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LBA110STR LBA110.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LBA110PTR LBA110.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LBA110LSTR LBA110L.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LBA110PLTR LBA110L.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXHX40N150V1HV IXHX40N150V1HV.pdf
IXHX40N150V1HV
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Type of thyristor: thyristor
Max. forward impulse current: 7.6kA
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IXHH40N150HV IXHH40N150HV.pdf
IXHH40N150HV
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247HV; THT; tube; 7.6kA
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Type of thyristor: thyristor
Max. forward impulse current: 7.6kA
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IXFN240N15T2 IXFN240N15T2.pdf
IXFN240N15T2
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Pulsed drain current: 600A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 5.2mΩ
Gate charge: 460nC
Kind of channel: enhancement
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 140ns
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXTH240N15X4 IXTH240N15X4_HV.pdf
IXTH240N15X4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 130ns
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IXFX240N15T2 IXFK(X)240N15T2.pdf
IXFX240N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXFK240N15T2 IXFK(X)240N15T2.pdf
IXFK240N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 240A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Reverse recovery time: 140ns
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IXFH240N15X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_240n15x3_datasheet.pdf?assetguid=db0daa8a-a090-4544-9e9a-0eaae950088b
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 240A; Idm: 420A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Pulsed drain current: 420A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 97ns
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MMJX1H40N150 MMJX1H40N150.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 15.5kA
Case: SMPD
Mounting: SMD
Features of semiconductor devices: Kelvin terminal; MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Type of thyristor: thyristor
Max. forward impulse current: 15.5kA
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LCB710 LCB710.pdf
LCB710
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LCB710STR LCB710.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.6Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXFN32N120P IXFN32N120P.pdf
IXFN32N120P
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 32A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.31Ω
Pulsed drain current: 100A
Power dissipation: 1kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 360nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
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IXTA3N100P-TRL littelfuse-discrete-mosfets-ixt-3n100p-datasheet?assetguid=ec56a47a-d10f-43fa-8e9e-e6b982b889df
IXTA3N100P-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 3A; 125W; D2PAK,TO263; 820ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 4.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Reverse recovery time: 820ns
Produkt ist nicht verfügbar
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IXTA3N100D2-TRL
IXTA3N100D2-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 3A; 125W; D2PAK,TO263; 970ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 37.5nC
Reverse recovery time: 970ns
Produkt ist nicht verfügbar
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IXTA3N100D2HV-TRL
IXTA3N100D2HV-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 3A; 125W; D2PAK,TO263; 970ns
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 37.5nC
Reverse recovery time: 970ns
Produkt ist nicht verfügbar
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CLA60PD1200NA CLA60PD1200NA.pdf
CLA60PD1200NA
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Max. forward impulse current: 935A
Gate current: 40/80mA
Max. forward voltage: 1.09V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 60A
Max. load current: 94A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.79V
Case: SOT227B
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MCMA25PD1200TB MCMA25PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 25A; TO240AA; Ufmax: 1.25V; bulk
Gate current: 55/80mA
Max. forward voltage: 1.25V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 25A
Max. load current: 40A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.87V
Case: TO240AA
Max. forward impulse current: 0.4kA
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MCMA65PD1200TB MCMA65PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Gate current: 95/200mA
Max. forward voltage: 1.17V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 65A
Max. load current: 105A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 1.15kA
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MCMA140PD1200TB MCMA140PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Gate current: 150/200mA
Max. forward voltage: 1.28V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 140A
Max. load current: 220A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 2.4kA
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MCMA110PD1200TB MCMA110PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Gate current: 150/200mA
Max. forward voltage: 1.21V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 110A
Max. load current: 170A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 1.9kA
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MCMA35PD1200TB MCMA35PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Gate current: 78/200mA
Max. forward voltage: 1.22V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 35A
Max. load current: 55A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.87V
Case: TO240AA
Max. forward impulse current: 520A
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MCMA50PD1200TB MCMA50PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 50A; TO240AA; Ufmax: 1.17V; bulk
Gate current: 78/200mA
Max. forward voltage: 1.17V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 50A
Max. load current: 79A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.89V
Case: TO240AA
Max. forward impulse current: 0.8kA
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MCMA85PD1200TB MCMA85PD1200TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.18V; bulk
Gate current: 95/200mA
Max. forward voltage: 1.18V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 85A
Max. load current: 135A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 1.5kA
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CPC3980ZTR CPC3980.pdf
CPC3980ZTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
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DSEI60-06A description DSEI60-06A.pdf
DSEI60-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 550A; TO247-2; tube; 166W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.55kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 1.5V
Power dissipation: 166W
Reverse recovery time: 35ns
Technology: FRED
Produkt ist nicht verfügbar
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DSEI60-10A description DSEI60-10A.pdf
DSEI60-10A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; Ifsm: 500A; TO247-2; tube; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.5kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 1.8V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
Produkt ist nicht verfügbar
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CPC1303GR CPC1303GR.pdf
CPC1303GR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 30V; SO4
Number of channels: 1
Mounting: SMD
Collector-emitter voltage: 30V
CTR@If: 200-2500%@0.2mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 2µs
Case: SO4
Turn-off time: 8µs
auf Bestellung 497 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
44+1.95 EUR
53+1.63 EUR
55+1.57 EUR
58+1.48 EUR
60+1.43 EUR
100+1.36 EUR
200+1.31 EUR
Mindestbestellmenge: 44 Stücke
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IXYH20N65B3 media?resourcetype=datasheets&amp;itemid=1ada074a-a195-4f5e-bc03-b3cf3a2bd9e1&amp;filename=littelfuse_discrete_igbts_xpt_ixy_20n65b3_datasheet.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 58A; 230W; TO247-3
Mounting: THT
Pulsed collector current: 108A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 58A
Collector-emitter voltage: 650V
Power dissipation: 230W
Gate charge: 29nC
Produkt ist nicht verfügbar
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IXYH75N65C3H1 IXYH75N65C3H1.pdf
IXYH75N65C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Pulsed collector current: 360A
Produkt ist nicht verfügbar
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IXYH75N65C3 IXYH75N65C3.pdf
IXYH75N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Pulsed collector current: 360A
Produkt ist nicht verfügbar
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IXTP120N20X4 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixtp120n20x4-datasheet?assetguid=498447f2-cfa1-469a-ae0d-3e02c92edc63
IXTP120N20X4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X4-Class; N; 200V; 120A; 417W; TO220-3; 190ns
Reverse recovery time: 190ns
Mounting: THT
Power dissipation: 417W
Gate charge: 108nC
Polarisation: N
Technology: X4-Class
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: TO220-3
On-state resistance: 9.5mΩ
Produkt ist nicht verfügbar
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IXYT30N65C3H1HV IXY_30N65C3H1_HV.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXTA30N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; D2PAK-3
Type of transistor: N-MOSFET
Technology: X2-Class
Case: D2PAK-3
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXXA30N65C3HV
IXXA30N65C3HV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 52A; 230W; D2PAK
Type of transistor: IGBT
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Collector current: 52A
Collector-emitter voltage: 650V
Pulsed collector current: 113A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXXH30N65B4 IXXH30N65B4.pdf
IXXH30N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXXH30N65B4D1 IXXH30N65B4D1.pdf
IXXH30N65B4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXXH30N65C4D1 IXXH30N65C4D1.pdf
IXXH30N65C4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 136A
Turn-on time: 65ns
Turn-off time: 161ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXYH30N65C3H1 IXY_30N65C3H1_HV.pdf
IXYH30N65C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXYP30N65C3 IXYH(P)30N65C3.pdf
IXYP30N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXTR140P10T IXTR140P10T.pdf
IXTR140P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -110A
Power dissipation: 270W
Case: ISOPLUS247™
Gate-source voltage: ±15V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Technology: TrenchP™
Produkt ist nicht verfügbar
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IXTA50N25T-TRL littelfuse-discrete-mosfets-ixt-50n25t-datasheet?assetguid=d7f19b2b-0219-4b0c-a29d-b093518ee586
IXTA50N25T-TRL
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 250V; 50A; 400W; D2PAK,TO263; 166ns
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Reverse recovery time: 166ns
Produkt ist nicht verfügbar
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IXFH150N15P IXFH150N15P.pdf
IXFH150N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 150A; 714W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFH150N17T2 DS100229IXFHT150N17T2.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 175V; 150A; 880W; TO247-3; 160ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 175V
Drain current: 150A
Power dissipation: 880W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 233nC
Kind of channel: enhancement
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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MCC255-14io1 LFPCN250210_Y1-screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 250A; Y1; Ufmax: 1.36V
Case: Y1
Gate current: 150/220mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 250A
Kind of package: bulk
Semiconductor structure: double series
auf Bestellung 5 Stücke:
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MCC255-16io1 MCC255-16IO1.pdf LFPCN250210_Y1-screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V
Case: Y1-CU
Max. forward impulse current: 7.82kA
Gate current: 150/220mA
Max. forward voltage: 1.08V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 250A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC255-12io1 LFPCN250210_Y1-screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 250A; Y1; Ufmax: 1.36V
Case: Y1
Gate current: 150/220mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 250A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCC255-18io1 MCC255-18io1.pdf LFPCN250210_Y1-screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V
Case: Y1-CU
Max. forward impulse current: 7.82kA
Gate current: 150/220mA
Max. forward voltage: 1.08V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 250A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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IXTK120N65X2 IXT_120N65X2.pdf
IXTK120N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
On-state resistance: 23mΩ
Reverse recovery time: 505ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Technology: X2-Class
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO264
Produkt ist nicht verfügbar
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IXTK120N20P IXTK120N20P-DTE.pdf
IXTK120N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO264
On-state resistance: 22mΩ
Reverse recovery time: 180ns
Mounting: THT
Power dissipation: 714W
Gate charge: 152nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
Produkt ist nicht verfügbar
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DSEP60-06A DSEP60-06A.pdf
DSEP60-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 600A; TO247-2; tube; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Max. forward impulse current: 0.6kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 1.39V
Reverse recovery time: 35ns
Technology: HiPerFRED™
Power dissipation: 330W
Features of semiconductor devices: fast switching
auf Bestellung 326 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
8+11.13 EUR
9+9.63 EUR
10+8.94 EUR
30+7.98 EUR
60+7.88 EUR
Mindestbestellmenge: 8 Stücke
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DSEP60-06AT-TUB DSEP60-06AT.pdf
DSEP60-06AT-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 60A; 35ns; D3PAK; Ufmax: 1.39V; 330W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Max. forward impulse current: 0.6kA
Case: D3PAK
Max. forward voltage: 1.39V
Reverse recovery time: 35ns
Technology: HiPerFRED™
Power dissipation: 330W
Features of semiconductor devices: fast switching
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+12.15 EUR
Mindestbestellmenge: 7 Stücke
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DSEP60-06AZ-TRL dsep60-06az-datasheet?assetguid=67e17690-63b2-4b68-8e19-a7ef161d4ceb
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60A; 35ns; D3PAK,TO268AA; 2V; Ifsm: 600A
Type of diode: rectifying
Mounting: SMD
Load current: 60A
Max. forward impulse current: 0.6kA
Case: D3PAK; TO268AA
Kind of package: reel; tape
Max. forward voltage: 2V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
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DSEP60-06AZ-TUB DSEP60-06AZ?assetguid=67e17690-63b2-4b68-8e19-a7ef161d4ceb
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60A; 35ns; D3PAK,TO268AA; 2V; Ifsm: 600A
Type of diode: rectifying
Mounting: SMD
Load current: 60A
Max. forward impulse current: 0.6kA
Case: D3PAK; TO268AA
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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DSEP60-12B littelfuse-power-semiconductors-dsep60-12b-datasheet?assetguid=d6424097-d31e-436f-a612-3acaffab9fed
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; Ifsm: 500A; TO247-2; tube; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward impulse current: 0.5kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 3.25V
Reverse recovery time: 65ns
Technology: FRED
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXGT25N160 IXGH(T)25N160.pdf
IXGT25N160
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXGA30N120B3 IXGA(H,P)30N120B3.pdf
IXGA30N120B3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO263
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: SMD
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+12.67 EUR
10+11.2 EUR
50+10.06 EUR
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IXGP30N120B3 IXGA(H,P)30N120B3.pdf
IXGP30N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 87nC
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 56ns
Kind of package: tube
Case: TO220-3
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Mounting: THT
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+13.84 EUR
Mindestbestellmenge: 7 Stücke
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