| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.85 EUR |
| 10+ | 6.33 EUR |
| 100+ | 5.76 EUR |
| 500+ | 5.74 EUR |
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Technische Details IXFA22N65X2 IXYS
Description: MOSFET N-CH 650V 22A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1.5mA, Supplier Device Package: TO-263HV, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V.
Weitere Produktangebote IXFA22N65X2 nach Preis ab 5.45 EUR bis 14.03 EUR
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IXFA22N65X2 | IXYS |
 Description: MOSFET N-CH 650V 22A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1.5mA Supplier Device Package: TO-263HV Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V |
auf Bestellung 4207 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFA22N65X2 |
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Hersteller: IXYS
Description: MOSFET N-CH 650V 22A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1.5mA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
Description: MOSFET N-CH 650V 22A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1.5mA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
auf Bestellung 4207 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.03 EUR |
| 50+ | 7.54 EUR |
| 100+ | 6.93 EUR |
| 500+ | 5.83 EUR |
| 1000+ | 5.47 EUR |
| 2000+ | 5.45 EUR |