auf Bestellung 224 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 9.26 EUR |
| 10+ | 7.78 EUR |
| 50+ | 6.88 EUR |
| 100+ | 6.07 EUR |
| 500+ | 5.58 EUR |
| 1000+ | 4.82 EUR |
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Technische Details IXFA22N65X2 IXYS
Description: MOSFET N-CH 650V 22A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1.5mA, Supplier Device Package: TO-263HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V.
Weitere Produktangebote IXFA22N65X2 nach Preis ab 4.82 EUR bis 9.33 EUR
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IXFA22N65X2 | Hersteller : IXYS |
 Description: MOSFET N-CH 650V 22A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1.5mA Supplier Device Package: TO-263HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA22N65X2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 22A 3-Pin(2+Tab) D2PAK |
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IXFA22N65X2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 390W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 37nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 145ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFA22N65X2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 390W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 37nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 145ns |
Produkt ist nicht verfügbar |