IXYP8N90C3D1 IXYS
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Type of transistor: IGBT
Power dissipation: 125W
Mounting: THT
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Type of transistor: IGBT
Power dissipation: 125W
Mounting: THT
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 156 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
13+ | 5.65 EUR |
15+ | 5.08 EUR |
19+ | 3.85 EUR |
20+ | 3.63 EUR |
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Technische Details IXYP8N90C3D1 IXYS
Description: IGBT 900V 20A 125W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Input Type: Standard, Reverse Recovery Time (trr): 114 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 16ns/40ns, Switching Energy: 460µJ (on), 180µJ (off), Test Condition: 450V, 8A, 30Ohm, 15V, Gate Charge: 13.3 nC, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 48 A, Power - Max: 125 W.
Weitere Produktangebote IXYP8N90C3D1 nach Preis ab 3.63 EUR bis 8.54 EUR
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IXYP8N90C3D1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3 Kind of package: tube Case: TO220-3 Gate-emitter voltage: ±20V Collector current: 8A Pulsed collector current: 48A Turn-on time: 39ns Turn-off time: 238ns Type of transistor: IGBT Power dissipation: 125W Mounting: THT Gate charge: 13.3nC Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 900V |
auf Bestellung 156 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYP8N90C3D1 | Hersteller : IXYS | IGBT Transistors XPT 900V IGBT GenX3 XPT IGBTs |
auf Bestellung 125 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYP8N90C3D1 | Hersteller : IXYS |
Description: IGBT 900V 20A 125W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Input Type: Standard Reverse Recovery Time (trr): 114 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 16ns/40ns Switching Energy: 460µJ (on), 180µJ (off) Test Condition: 450V, 8A, 30Ohm, 15V Gate Charge: 13.3 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 48 A Power - Max: 125 W |
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