| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.71 EUR |
| 10+ | 4.58 EUR |
| 100+ | 3.77 EUR |
| 500+ | 2.93 EUR |
| 1000+ | 2.89 EUR |
| 2500+ | 2.84 EUR |
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Technische Details IXYP8N90C3 IXYS
Description: IGBT 900V 20A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 16ns/40ns, Switching Energy: 460µJ (on), 180µJ (off), Test Condition: 450V, 8A, 30Ohm, 15V, Gate Charge: 13.3 nC, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 48 A, Power - Max: 125 W.
Weitere Produktangebote IXYP8N90C3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXYP8N90C3 | IXYS |
 Description: IGBT 900V 20A TO-220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 16ns/40ns Switching Energy: 460µJ (on), 180µJ (off) Test Condition: 450V, 8A, 30Ohm, 15V Gate Charge: 13.3 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 48 A Power - Max: 125 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXYP8N90C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3 Collector current: 8A Mounting: THT Collector-emitter voltage: 900V Power dissipation: 125W Gate charge: 13.3nC Technology: GenX3™; Planar; XPT™ Pulsed collector current: 48A Type of transistor: IGBT Turn-on time: 39ns Kind of package: tube Case: TO220-3 Turn-off time: 238ns Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXYP8N90C3 |
|
Hersteller: IXYS
Description: IGBT 900V 20A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
Description: IGBT 900V 20A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYP8N90C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector current: 8A
Mounting: THT
Collector-emitter voltage: 900V
Power dissipation: 125W
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Type of transistor: IGBT
Turn-on time: 39ns
Kind of package: tube
Case: TO220-3
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector current: 8A
Mounting: THT
Collector-emitter voltage: 900V
Power dissipation: 125W
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Type of transistor: IGBT
Turn-on time: 39ns
Kind of package: tube
Case: TO220-3
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH