
auf Bestellung 257 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 6.37 EUR |
10+ | 4.17 EUR |
100+ | 2.76 EUR |
500+ | 2.71 EUR |
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Technische Details IXYP8N90C3 IXYS
Description: IGBT 900V 20A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 16ns/40ns, Switching Energy: 460µJ (on), 180µJ (off), Test Condition: 450V, 8A, 30Ohm, 15V, Gate Charge: 13.3 nC, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 48 A, Power - Max: 125 W.
Weitere Produktangebote IXYP8N90C3
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXYP8N90C3 | Hersteller : Littelfuse |
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IXYP8N90C3 | Hersteller : IXYS |
![]() Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3 Case: TO220-3 Gate-emitter voltage: ±20V Collector current: 8A Pulsed collector current: 48A Turn-on time: 39ns Turn-off time: 238ns Type of transistor: IGBT Power dissipation: 125W Mounting: THT Kind of package: tube Gate charge: 13.3nC Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 900V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXYP8N90C3 | Hersteller : IXYS |
Description: IGBT 900V 20A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 16ns/40ns Switching Energy: 460µJ (on), 180µJ (off) Test Condition: 450V, 8A, 30Ohm, 15V Gate Charge: 13.3 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 48 A Power - Max: 125 W |
Produkt ist nicht verfügbar |
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IXYP8N90C3 | Hersteller : IXYS |
![]() Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3 Case: TO220-3 Gate-emitter voltage: ±20V Collector current: 8A Pulsed collector current: 48A Turn-on time: 39ns Turn-off time: 238ns Type of transistor: IGBT Power dissipation: 125W Mounting: THT Kind of package: tube Gate charge: 13.3nC Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 900V |
Produkt ist nicht verfügbar |