IXBH6N170 IXYS
Hersteller: IXYS
Description: IGBT 1700V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.08 µs
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 6A
Supplier Device Package: TO-247AD
Gate Charge: 17 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 75 W
Description: IGBT 1700V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.08 µs
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 6A
Supplier Device Package: TO-247AD
Gate Charge: 17 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 75 W
auf Bestellung 570 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 27.95 EUR |
30+ | 22.31 EUR |
120+ | 19.96 EUR |
510+ | 17.61 EUR |
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Technische Details IXBH6N170 IXYS
Category: THT IGBT transistors, Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3, Technology: BiMOSFET™, Mounting: THT, Features of semiconductor devices: high voltage, Case: TO247-3, Kind of package: tube, Power dissipation: 75W, Collector-emitter voltage: 1.7kV, Gate-emitter voltage: ±20V, Collector current: 6A, Pulsed collector current: 36A, Turn-on time: 104ns, Turn-off time: 700ns, Type of transistor: IGBT, Gate charge: 17nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXBH6N170 nach Preis ab 19.99 EUR bis 28.13 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXBH6N170 | Hersteller : IXYS | IGBT Transistors 12 Amps 1700V 3.6 Rds |
auf Bestellung 188 Stücke: Lieferzeit 14-28 Tag (e) |
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IXBH6N170 Produktcode: 83906 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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IXBH6N170 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3 Technology: BiMOSFET™ Mounting: THT Features of semiconductor devices: high voltage Case: TO247-3 Kind of package: tube Power dissipation: 75W Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 6A Pulsed collector current: 36A Turn-on time: 104ns Turn-off time: 700ns Type of transistor: IGBT Gate charge: 17nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXBH6N170 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3 Technology: BiMOSFET™ Mounting: THT Features of semiconductor devices: high voltage Case: TO247-3 Kind of package: tube Power dissipation: 75W Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 6A Pulsed collector current: 36A Turn-on time: 104ns Turn-off time: 700ns Type of transistor: IGBT Gate charge: 17nC |
Produkt ist nicht verfügbar |