auf Bestellung 1348 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 18.59 EUR |
| 10+ | 17.86 EUR |
| 25+ | 17.53 EUR |
| 50+ | 17.42 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTK140N20P IXYS
Description: MOSFET N-CH 200V 140A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V, Power Dissipation (Max): 800W (Tc), Vgs(th) (Max) @ Id: 5V @ 500µA, Supplier Device Package: TO-264 (IXTK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V.
Weitere Produktangebote IXTK140N20P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
IXTK140N20P | Hersteller : IXYS SEMICONDUCTOR |
 Description: IXYS SEMICONDUCTOR - IXTK140N20P - Leistungs-MOSFET, PolarFET, n-Kanal, 200 V, 140 A, 0.018 ohm, TO-264, DurchsteckmontagetariffCode: 85412900 Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 140A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 800W Anzahl der Pins: 3Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.018ohm |
auf Bestellung 292 Stücke: Lieferzeit 14-21 Tag (e) |
|
 |
IXTK140N20P | Hersteller : Littelfuse |
Trans MOSFET N-CH 200V 140A 3-Pin(3+Tab) TO-264AA |
Produkt ist nicht verfügbar |
|
 |
IXTK140N20P | Hersteller : Littelfuse |
Trans MOSFET N-CH 200V 140A 3-Pin(3+Tab) TO-264AA |
Produkt ist nicht verfügbar |
|
 |
IXTK140N20P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264 Mounting: THT Drain-source voltage: 200V Drain current: 140A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 800W Polarisation: unipolar Kind of package: tube Gate charge: 240nC Technology: PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V Case: TO264 Reverse recovery time: 180ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
IXTK140N20P | Hersteller : IXYS |
Description: MOSFET N-CH 200V 140A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V Power Dissipation (Max): 800W (Tc) Vgs(th) (Max) @ Id: 5V @ 500µA Supplier Device Package: TO-264 (IXTK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V |
Produkt ist nicht verfügbar |
|
|
|
IXTK140N20P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264 Mounting: THT Drain-source voltage: 200V Drain current: 140A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 800W Polarisation: unipolar Kind of package: tube Gate charge: 240nC Technology: PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V Case: TO264 Reverse recovery time: 180ns |
Produkt ist nicht verfügbar |