IXTK140N20P IXYS
Hersteller: IXYS
Description: MOSFET N-CH 200V 140A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
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Technische Details IXTK140N20P IXYS
Description: MOSFET N-CH 200V 140A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V, Power Dissipation (Max): 800W (Tc), Vgs(th) (Max) @ Id: 5V @ 500µA, Supplier Device Package: TO-264 (IXTK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V.
Weitere Produktangebote IXTK140N20P
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTK140N20P | Hersteller : IXYS |
MOSFETs 140 Amps 200V 0.018 Rds |
Produkt ist nicht verfügbar |
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IXTK140N20P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 140A Power dissipation: 800W Case: TO264 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 180ns Technology: PolarHT™ |
Produkt ist nicht verfügbar |