| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXFH120N30X3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 120A Power dissipation: 735W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 145ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
 |
IXTP2N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Power dissipation: 55W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 137ns Gate charge: 4.3nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
|
IXTH62N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 62A Power dissipation: 780W Case: TO247-3 On-state resistance: 50mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 445ns Gate charge: 0.1µC Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
 |
DSEI30-06A | IXYS |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 37A; tube; Ifsm: 300A; TO247-2; 125W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 37A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 0.3kA Case: TO247-2 Max. forward voltage: 1.4V Power dissipation: 125W Reverse recovery time: 35ns Technology: FRED |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
| MD16200S-DKM2MM | IXYS |
Category: Diode modules Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S Type of semiconductor module: diode Semiconductor structure: common cathode; double Max. off-state voltage: 1.6kV Load current: 200A Case: package S Max. forward voltage: 1.5V Max. forward impulse current: 6.5kA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Max. load current: 310A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MDMA210P1600YD | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 210A Case: Y4-M6 Max. forward voltage: 1.04V Max. forward impulse current: 6.6kA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
 |
LCA110 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
 |
LCA110S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
 |
LCA110L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| LCA110LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| LCA110STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
 |
LCA110LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
|
DSEK60-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 300A; TO247-3; 125W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 0.3kA Case: TO247-3 Max. forward voltage: 1.4V Power dissipation: 125W Reverse recovery time: 35ns Technology: FRED |
auf Bestellung 183 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
 |
DSEK60-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 26Ax2; tube; Ifsm: 200A; TO247-3; 125W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 26A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 200A Case: TO247-3 Max. forward voltage: 2.55V Power dissipation: 125W Reverse recovery time: 40ns Technology: FRED |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
 |
IXTR40P50P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 312W Case: ISOPLUS247™ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: PolarP™ Drain-source voltage: -500V Drain current: -22A Reverse recovery time: 477ns Gate charge: 205nC On-state resistance: 0.26Ω Gate-source voltage: ±20V |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
 |
IXTQ82N25P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 82A Power dissipation: 500W Case: TO3P Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: THT Gate charge: 142nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
auf Bestellung 262 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
 |
IXFB100N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™ Kind of package: tube Kind of channel: enhancement Mounting: THT Technology: HiPerFET™; Polar™ Type of transistor: N-MOSFET Case: PLUS264™ Polarisation: unipolar Reverse recovery time: 200ns Gate charge: 240nC On-state resistance: 49mΩ Gate-source voltage: ±30V Drain current: 100A Drain-source voltage: 500V Power dissipation: 1890W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
 |
IXFB100N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™ Kind of package: tube Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Case: PLUS264™ Polarisation: unipolar Gate charge: 255nC On-state resistance: 49mΩ Drain current: 100A Drain-source voltage: 500V Power dissipation: 1.56kW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
 |
IXGK400N30A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264 Case: TO264 Mounting: THT Technology: GenX3™; PT Type of transistor: IGBT Turn-on time: 0.1µs Gate charge: 560nC Turn-off time: 565ns Gate-emitter voltage: ±20V Collector current: 200A Collector-emitter voltage: 300V Power dissipation: 1kW Pulsed collector current: 1.2kA Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
 |
IXTN80N30L2 | IXYS |
Category: Transistor drivers Description: Module; single transistor; 300V; 80A; SOT227B; screw; Idm: 200A Case: SOT227B Type of semiconductor module: MOSFET transistor Kind of channel: enhancement Technology: Linear L2™ Mechanical mounting: screw Electrical mounting: screw Polarisation: unipolar Reverse recovery time: 485ns Gate charge: 660nC On-state resistance: 38mΩ Gate-source voltage: ±30V Drain current: 80A Pulsed drain current: 200A Drain-source voltage: 300V Power dissipation: 735W Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| MIXA225RF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Gate-emitter voltage: ±20V Max. off-state voltage: 1.2kV Collector current: 250A Pulsed collector current: 500A Power dissipation: 1.1kW Topology: boost chopper; NTC thermistor Semiconductor structure: diode/transistor Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MDNA425P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-Fit Load current: 425A Max. off-state voltage: 2.2kV Max. forward impulse current: 10kA Kind of package: bulk Semiconductor structure: double series Type of semiconductor module: diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MDNA300P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-Fit Load current: 300A Max. off-state voltage: 2.2kV Max. forward impulse current: 8kA Kind of package: bulk Semiconductor structure: double series Type of semiconductor module: diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MDNA600P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-Fit Load current: 600A Max. off-state voltage: 2.2kV Max. forward impulse current: 15kA Kind of package: bulk Semiconductor structure: double series Type of semiconductor module: diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MIXA300PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Gate-emitter voltage: ±20V Max. off-state voltage: 1.2kV Collector current: 325A Pulsed collector current: 650A Power dissipation: 1.5kW Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT Application: fans; for pump; for UPS; motors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MIXA450PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Gate-emitter voltage: ±20V Max. off-state voltage: 1.2kV Collector current: 450A Pulsed collector current: 900A Power dissipation: 2.1kW Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT Application: fans; for pump; for UPS; motors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MIXG330PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-in PCB Technology: X2PT Max. off-state voltage: 1.2kV Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MIXG490PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-in PCB Technology: X2PT Max. off-state voltage: 1.2kV Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MIXG330PF1200PTSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-in PCB Technology: X2PT Max. off-state voltage: 1.2kV Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MIXG490PF1200PTSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-in PCB Technology: X2PT Max. off-state voltage: 1.2kV Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
 |
VBE55-06NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 600V; If: 68A; Ifsm: 215A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 68A Max. forward impulse current: 215A Electrical mounting: THT Mechanical mounting: screw Version: module Case: ECO-PAC 1 Technology: FRED |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
 |
DPG120C300QB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 60Ax2; tube; Ifsm: 450A; TO3P; 275W Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 60A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 0.45kA Case: TO3P Max. forward voltage: 1.4V Power dissipation: 275W Reverse recovery time: 35ns Technology: HiPerFRED™ 2nd Gen |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
| IXGL75N250 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 2.5kV; 110A; 430W; ISOPLUS264™ Type of transistor: IGBT Power dissipation: 430W Case: ISOPLUS264™ Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 110A Pulsed collector current: 580A Collector-emitter voltage: 2.5kV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
 |
IXYH30N450HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV Case: TO247HV Mounting: THT Kind of package: tube Features of semiconductor devices: high voltage Technology: XPT™ Gate charge: 88nC Turn-on time: 632ns Turn-off time: 1545ns Gate-emitter voltage: ±20V Collector current: 30A Power dissipation: 430W Pulsed collector current: 200A Collector-emitter voltage: 4.5kV Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
 |
IXYT30N450HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV Case: TO268HV Mounting: SMD Kind of package: tube Features of semiconductor devices: high voltage Technology: XPT™ Gate charge: 88nC Turn-on time: 632ns Turn-off time: 1542ns Gate-emitter voltage: ±20V Collector current: 30A Power dissipation: 430W Pulsed collector current: 200A Collector-emitter voltage: 4.5kV Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
|
IXFH96N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 96A Power dissipation: 600W Case: TO247-3 On-state resistance: 24mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 145nC |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
|
|
IXTP48N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 48A Power dissipation: 250W Case: TO220AB On-state resistance: 50mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 60nC Reverse recovery time: 130ns Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 299 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
 |
IXFX230N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 230A Power dissipation: 1.67kW Case: PLUS247™ On-state resistance: 7.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 358nC Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 108 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
| MEK600-04DA | IXYS |
Category: Diode modules Description: Module: diode; double,common cathode; 400V; If: 600A; Y4-M6; screw Kind of package: bulk Semiconductor structure: common cathode; double Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Case: Y4-M6 Max. forward voltage: 1.2V Max. off-state voltage: 0.4kV Load current: 600A Max. forward impulse current: 3kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| ZY180RM | IXYS |
Category: Discrete semicon. modules - Unclass. Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| ZY180R480 | IXYS |
Category: Discrete semicon. modules - Unclass. Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| ZY180R350 | IXYS |
Category: Discrete semicon. modules - Unclass. Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| ZY180L350 | IXYS |
Category: Discrete semicon. modules - Unclass. Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| ZY180L480 | IXYS |
Category: Discrete semicon. modules - Unclass. Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
 |
PLA191S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 3ms Turn-off time: 1ms Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
| PLA191STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 3ms Turn-off time: 1ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
 |
IXTP14N60PM | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 75W Case: TO220FP On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs Features of semiconductor devices: standard power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
|
IXTK150N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 150A Power dissipation: 714W Case: TO264 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: PolarHT™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| IXTL2N450 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 2A Power dissipation: 220W Case: ISOPLUS i5-pac™ On-state resistance: 20Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.75µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IXTL2N470 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.7kV; 2A; 220W; ISOPLUS i5-pac™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.7kV Drain current: 2A Power dissipation: 220W Case: ISOPLUS i5-pac™ On-state resistance: 20Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.75µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
 |
DSP25-16AR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 28Ax2; tube; Ifsm: 300A; ISOPLUS247™ Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.6kV Load current: 28A x2 Case: ISOPLUS247™ Max. forward voltage: 1.23V Max. forward impulse current: 0.3kA Kind of package: tube Semiconductor structure: double series Power dissipation: 100W |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
 |
DSP25-16A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 25A; tube; Ifsm: 300A; TO247-3; 160W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.6kV Load current: 25A Case: TO247-3 Max. forward voltage: 1.23V Max. forward impulse current: 0.3kA Kind of package: tube Semiconductor structure: double series Power dissipation: 160W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
 |
DSP25-16AT-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.6kV Load current: 25A Case: D3PAK Max. forward voltage: 1.16V Max. forward impulse current: 0.3kA Semiconductor structure: double series Power dissipation: 160W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| DSP25-16AT-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V Mounting: SMD Case: D3PAK; TO268AA Kind of package: reel; tape Max. forward impulse current: 325A Max. forward voltage: 1.23V Max. off-state voltage: 1.6kV Load current: 25A Type of diode: rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
|
|
IXBH12N300 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3 Features of semiconductor devices: high voltage Type of transistor: IGBT Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 62nC Turn-on time: 460ns Turn-off time: 705ns Collector current: 12A Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 160W Collector-emitter voltage: 3kV Technology: BiMOSFET™; FRED |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
 |
LF2101NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA Mounting: SMD Type of integrated circuit: driver Case: SO8 Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Kind of package: reel; tape Operating temperature: -40...125°C Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V Voltage class: 600V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
 |
LAA108S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS Operating temperature: -40...85°C Case: DIP8 Kind of output: MOSFET Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Turn-off time: 3ms Turn-on time: 3ms Body dimensions: 9.66x6.35x3.3mm Control current max.: 50mA Max. operating current: 300mA On-state resistance: 8Ω Switched voltage: max. 100V AC; max. 100V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Manufacturer series: OptoMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| LAA108STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS Operating temperature: -40...85°C Case: DIP8 Kind of output: MOSFET Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Turn-off time: 3ms Turn-on time: 3ms Body dimensions: 9.66x6.35x3.3mm Control current max.: 50mA Max. operating current: 300mA On-state resistance: 8Ω Switched voltage: max. 100V AC; max. 100V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Manufacturer series: OptoMOS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MKI75-06A7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Application: for UPS; motors Max. off-state voltage: 0.6kV Technology: NPT Topology: H-bridge Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MWI75-06A7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Application: motors Max. off-state voltage: 0.6kV Technology: NPT Topology: IGBT three-phase bridge; NTC thermistor Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFH120N30X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP2N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Gate charge: 4.3nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Gate charge: 4.3nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH62N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 62A
Power dissipation: 780W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 445ns
Gate charge: 0.1µC
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 62A
Power dissipation: 780W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 445ns
Gate charge: 0.1µC
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSEI30-06A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 37A; tube; Ifsm: 300A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 37A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 37A; tube; Ifsm: 300A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 37A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 6.44 EUR |
| 16+ | 5.58 EUR |
| 17+ | 5.18 EUR |
| MD16200S-DKM2MM |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 200A
Case: package S
Max. forward voltage: 1.5V
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Max. load current: 310A
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 200A
Case: package S
Max. forward voltage: 1.5V
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Max. load current: 310A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MDMA210P1600YD |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 210A
Case: Y4-M6
Max. forward voltage: 1.04V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 210A
Case: Y4-M6
Max. forward voltage: 1.04V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LCA110 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LCA110S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LCA110L |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LCA110LSTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LCA110STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LCA110LS |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSEK60-06A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 300A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-3
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 300A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-3
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.41 EUR |
| DSEK60-12A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26Ax2; tube; Ifsm: 200A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.55V
Power dissipation: 125W
Reverse recovery time: 40ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26Ax2; tube; Ifsm: 200A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.55V
Power dissipation: 125W
Reverse recovery time: 40ns
Technology: FRED
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 21.28 EUR |
| IXTR40P50P |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 312W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -22A
Reverse recovery time: 477ns
Gate charge: 205nC
On-state resistance: 0.26Ω
Gate-source voltage: ±20V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 312W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -22A
Reverse recovery time: 477ns
Gate charge: 205nC
On-state resistance: 0.26Ω
Gate-source voltage: ±20V
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 21.44 EUR |
| 5+ | 19.09 EUR |
| 10+ | 16.95 EUR |
| IXTQ82N25P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 82A
Power dissipation: 500W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 82A
Power dissipation: 500W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 12.28 EUR |
| 9+ | 10.34 EUR |
| 10+ | 9.17 EUR |
| 30+ | 8.83 EUR |
| IXFB100N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 49mΩ
Gate-source voltage: ±30V
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1890W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 49mΩ
Gate-source voltage: ±30V
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1890W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFB100N50Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 49mΩ
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1.56kW
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 49mΩ
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1.56kW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGK400N30A3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Case: TO264
Mounting: THT
Technology: GenX3™; PT
Type of transistor: IGBT
Turn-on time: 0.1µs
Gate charge: 560nC
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 300V
Power dissipation: 1kW
Pulsed collector current: 1.2kA
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Case: TO264
Mounting: THT
Technology: GenX3™; PT
Type of transistor: IGBT
Turn-on time: 0.1µs
Gate charge: 560nC
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 300V
Power dissipation: 1kW
Pulsed collector current: 1.2kA
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTN80N30L2 |
|
Hersteller: IXYS
Category: Transistor drivers
Description: Module; single transistor; 300V; 80A; SOT227B; screw; Idm: 200A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Kind of channel: enhancement
Technology: Linear L2™
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Reverse recovery time: 485ns
Gate charge: 660nC
On-state resistance: 38mΩ
Gate-source voltage: ±30V
Drain current: 80A
Pulsed drain current: 200A
Drain-source voltage: 300V
Power dissipation: 735W
Semiconductor structure: single transistor
Category: Transistor drivers
Description: Module; single transistor; 300V; 80A; SOT227B; screw; Idm: 200A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Kind of channel: enhancement
Technology: Linear L2™
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Reverse recovery time: 485ns
Gate charge: 660nC
On-state resistance: 38mΩ
Gate-source voltage: ±30V
Drain current: 80A
Pulsed drain current: 200A
Drain-source voltage: 300V
Power dissipation: 735W
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MIXA225RF1200TSF |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Topology: boost chopper; NTC thermistor
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Topology: boost chopper; NTC thermistor
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MDNA425P2200PTSF |
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-Fit
Load current: 425A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 10kA
Kind of package: bulk
Semiconductor structure: double series
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-Fit
Load current: 425A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 10kA
Kind of package: bulk
Semiconductor structure: double series
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MDNA300P2200PTSF |
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-Fit
Load current: 300A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 8kA
Kind of package: bulk
Semiconductor structure: double series
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-Fit
Load current: 300A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 8kA
Kind of package: bulk
Semiconductor structure: double series
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MDNA600P2200PTSF |
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-Fit
Load current: 600A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 15kA
Kind of package: bulk
Semiconductor structure: double series
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-Fit
Load current: 600A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 15kA
Kind of package: bulk
Semiconductor structure: double series
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MIXA300PF1200TSF |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 325A
Pulsed collector current: 650A
Power dissipation: 1.5kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 325A
Pulsed collector current: 650A
Power dissipation: 1.5kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MIXA450PF1200TSF |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.1kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.1kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MIXG330PF1200TSF |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MIXG490PF1200TSF |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MIXG330PF1200PTSF |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MIXG490PF1200PTSF |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VBE55-06NO7 |
|
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 68A; Ifsm: 215A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 68A
Max. forward impulse current: 215A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 68A; Ifsm: 215A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 68A
Max. forward impulse current: 215A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 23.11 EUR |
| 5+ | 22.05 EUR |
| 10+ | 20.47 EUR |
| DPG120C300QB |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 60Ax2; tube; Ifsm: 450A; TO3P; 275W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 60A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO3P
Max. forward voltage: 1.4V
Power dissipation: 275W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 60Ax2; tube; Ifsm: 450A; TO3P; 275W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 60A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO3P
Max. forward voltage: 1.4V
Power dissipation: 275W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 11.92 EUR |
| 9+ | 9.87 EUR |
| IXGL75N250 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 110A; 430W; ISOPLUS264™
Type of transistor: IGBT
Power dissipation: 430W
Case: ISOPLUS264™
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 580A
Collector-emitter voltage: 2.5kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 110A; 430W; ISOPLUS264™
Type of transistor: IGBT
Power dissipation: 430W
Case: ISOPLUS264™
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 580A
Collector-emitter voltage: 2.5kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXYH30N450HV |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYT30N450HV |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1542ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1542ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFH96N20P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 145nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 145nC
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 12.22 EUR |
| 8+ | 10.65 EUR |
| 10+ | 9.73 EUR |
| 20+ | 8.94 EUR |
| IXTP48N20T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 60nC
Reverse recovery time: 130ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 60nC
Reverse recovery time: 130ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 6.26 EUR |
| 16+ | 5.5 EUR |
| 20+ | 4.39 EUR |
| 50+ | 3.39 EUR |
| IXFX230N20T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1.67kW
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 358nC
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1.67kW
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 358nC
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 29.27 EUR |
| 5+ | 27.51 EUR |
| 10+ | 24.73 EUR |
| 30+ | 24.31 EUR |
| MEK600-04DA |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 600A; Y4-M6; screw
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.2V
Max. off-state voltage: 0.4kV
Load current: 600A
Max. forward impulse current: 3kA
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 600A; Y4-M6; screw
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.2V
Max. off-state voltage: 0.4kV
Load current: 600A
Max. forward impulse current: 3kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZY180RM |
Hersteller: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZY180R480 |
Hersteller: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZY180R350 |
Hersteller: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZY180L350 |
Hersteller: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZY180L480 |
|
Hersteller: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PLA191S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 12.51 EUR |
| 100+ | 9.57 EUR |
| PLA191STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTP14N60PM |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTK150N15P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTL2N450 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 2A
Power dissipation: 220W
Case: ISOPLUS i5-pac™
On-state resistance: 20Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 2A
Power dissipation: 220W
Case: ISOPLUS i5-pac™
On-state resistance: 20Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTL2N470 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.7kV; 2A; 220W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.7kV
Drain current: 2A
Power dissipation: 220W
Case: ISOPLUS i5-pac™
On-state resistance: 20Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.7kV; 2A; 220W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.7kV
Drain current: 2A
Power dissipation: 220W
Case: ISOPLUS i5-pac™
On-state resistance: 20Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSP25-16AR |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 28Ax2; tube; Ifsm: 300A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 28A x2
Case: ISOPLUS247™
Max. forward voltage: 1.23V
Max. forward impulse current: 0.3kA
Kind of package: tube
Semiconductor structure: double series
Power dissipation: 100W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 28Ax2; tube; Ifsm: 300A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 28A x2
Case: ISOPLUS247™
Max. forward voltage: 1.23V
Max. forward impulse current: 0.3kA
Kind of package: tube
Semiconductor structure: double series
Power dissipation: 100W
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 12.27 EUR |
| 10+ | 10.65 EUR |
| DSP25-16A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 25A
Case: TO247-3
Max. forward voltage: 1.23V
Max. forward impulse current: 0.3kA
Kind of package: tube
Semiconductor structure: double series
Power dissipation: 160W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 25A
Case: TO247-3
Max. forward voltage: 1.23V
Max. forward impulse current: 0.3kA
Kind of package: tube
Semiconductor structure: double series
Power dissipation: 160W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSP25-16AT-TUB |
|
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 25A
Case: D3PAK
Max. forward voltage: 1.16V
Max. forward impulse current: 0.3kA
Semiconductor structure: double series
Power dissipation: 160W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 25A
Case: D3PAK
Max. forward voltage: 1.16V
Max. forward impulse current: 0.3kA
Semiconductor structure: double series
Power dissipation: 160W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSP25-16AT-TRL |
|
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V
Mounting: SMD
Case: D3PAK; TO268AA
Kind of package: reel; tape
Max. forward impulse current: 325A
Max. forward voltage: 1.23V
Max. off-state voltage: 1.6kV
Load current: 25A
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V
Mounting: SMD
Case: D3PAK; TO268AA
Kind of package: reel; tape
Max. forward impulse current: 325A
Max. forward voltage: 1.23V
Max. off-state voltage: 1.6kV
Load current: 25A
Type of diode: rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXBH12N300 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 62nC
Turn-on time: 460ns
Turn-off time: 705ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 160W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™; FRED
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 62nC
Turn-on time: 460ns
Turn-off time: 705ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 160W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™; FRED
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LF2101NTR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Mounting: SMD
Type of integrated circuit: driver
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Mounting: SMD
Type of integrated circuit: driver
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LAA108S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LAA108STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MKI75-06A7T |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: for UPS; motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: for UPS; motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MWI75-06A7T |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH