| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DHG20C1200PB | IXYS |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 10Ax2; tube; Ifsm: 60A; TO220AB; 85W Type of diode: rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 2.23V Max. forward impulse current: 60A Kind of package: tube Reverse recovery time: 200ns Heatsink thickness: 1.14...1.39mm Power dissipation: 85W Features of semiconductor devices: fast switching Technology: Sonic FRD™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DPU30I1200PA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 250A; TO220-2; 123ns Type of diode: rectifying Case: TO220-2 Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 250A Kind of package: tube Reverse recovery time: 123ns Technology: FRED |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXA20I1200PB | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3 Case: TO220-3 Mounting: THT Kind of package: tube Gate charge: 47nC Turn-on time: 110ns Turn-off time: 350ns Gate-emitter voltage: ±20V Collector current: 22A Power dissipation: 165W Pulsed collector current: 45A Collector-emitter voltage: 1.2kV Technology: GenX3™; Planar; Sonic FRD™; XPT™ Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MIXA80W1200PTEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: E3-Pack Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Collector current: 84A Technology: XPT™ Type of semiconductor module: IGBT Topology: IGBT three-phase bridge; NTC thermistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MIXG120W1200PTEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: E3-Pack Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Collector current: 140A Technology: X2PT Type of semiconductor module: IGBT Topology: IGBT three-phase bridge; NTC thermistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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DSEE30-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO247-3; tube; 165W Max. off-state voltage: 1.2kV Load current: 30A Max. forward impulse current: 200A Case: TO247-3 Max. forward voltage: 2.5V Power dissipation: 165W Technology: HiPerFRED™ Features of semiconductor devices: fast switching Kind of package: tube Semiconductor structure: double series Type of diode: rectifying Reverse recovery time: 30ns Mounting: THT |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MEE300-06DA | IXYS |
Category: Diode modules Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V Max. forward impulse current: 2.4kA Max. forward voltage: 1.19V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 0.6kV Electrical mounting: screw Load current: 304A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IXXH80N65B4D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 625W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 430A Mounting: THT Gate charge: 0.12µC Kind of package: tube Technology: GenX4™; Trench; XPT™ Turn-on time: 125ns Turn-off time: 222ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXXH80N65B4H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 625W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 430A Mounting: THT Gate charge: 0.12µC Kind of package: tube Technology: GenX4™; Trench; XPT™ Turn-on time: 123ns Turn-off time: 147ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MCC56-12io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.62V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 60A Case: TO240AA Max. forward voltage: 1.62V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw Max. forward impulse current: 1.62kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MCC56-12io8B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.57V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 60A Case: TO240AA Max. forward voltage: 1.57V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw Max. forward impulse current: 1.5kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MCC56-18io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.57V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 60A Case: TO240AA Max. forward voltage: 1.57V Max. forward impulse current: 1.6kA Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCC56-08io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 800V; 60A; TO240AA; Ufmax: 1.62V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 60A Case: TO240AA Max. forward voltage: 1.62V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCC56-08io8B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 800V; 60A; TO240AA; Ufmax: 1.62V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 60A Case: TO240AA Max. forward voltage: 1.62V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCC56-14IO1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 60A Case: TO240AA Max. forward voltage: 1.62V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 36 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MCC56-14io8B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 60A Case: TO240AA Max. forward voltage: 1.62V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCC56-18io8B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.62V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 60A Case: TO240AA Max. forward voltage: 1.62V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IXYK180N65A5 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 180A; 1.15kW; TO264 Type of transistor: IGBT Power dissipation: 1.15kW Case: TO264 Mounting: THT Kind of package: tube Pulsed collector current: 1kA Turn-off time: 0.5µs Gate-emitter voltage: ±20V Collector current: 180A Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IXYN180N65A5 | IXYS |
Category: IGBT modules Description: Module: IGBT; Ic: 180A; SOT227B; tube; screw Case: SOT227B Kind of package: tube Gate-emitter voltage: ±20V Collector current: 180A Collector-emitter voltage: 650V Type of semiconductor module: IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IXYX180N65A5 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 220A; 1.15kW; TO247-3 Type of transistor: IGBT Power dissipation: 1.15kW Case: TO247-3 Mounting: THT Kind of package: tube Pulsed collector current: 1kA Turn-off time: 0.5µs Gate-emitter voltage: ±20V Collector current: 220A Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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DFE240X600NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw Max. load current: 240A Max. off-state voltage: 0.6kV Type of semiconductor module: diode Max. forward impulse current: 1.2kA Semiconductor structure: double independent Technology: FRED Mechanical mounting: screw Electrical mounting: screw Case: SOT227B Kind of package: tube Reverse recovery time: 35ns Max. forward voltage: 1.2V Load current: 120A x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXBH24N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3 Mounting: THT Features of semiconductor devices: high voltage Type of transistor: IGBT Case: TO247-3 Kind of package: tube Gate charge: 0.14µC Turn-on time: 190ns Turn-off time: 1285ns Collector current: 24A Pulsed collector current: 230A Gate-emitter voltage: ±20V Power dissipation: 250W Collector-emitter voltage: 1.7kV Technology: BiMOSFET™ |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXBH22N300HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 3kV; 60A; 290W; TO247HV Mounting: THT Type of transistor: IGBT Case: TO247HV Kind of package: tube Collector current: 60A Power dissipation: 290W Collector-emitter voltage: 3kV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXBH2N250 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO247-3 Mounting: THT Features of semiconductor devices: high voltage Type of transistor: IGBT Case: TO247-3 Kind of package: tube Gate charge: 10.6nC Turn-on time: 310ns Turn-off time: 252ns Collector current: 2A Pulsed collector current: 13A Gate-emitter voltage: ±20V Power dissipation: 32W Collector-emitter voltage: 2.5kV Technology: BiMOSFET™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTH120P065T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns Mounting: THT Type of transistor: P-MOSFET Gate-source voltage: ±15V Kind of package: tube Case: TO247-3 On-state resistance: 10mΩ Reverse recovery time: 53ns Power dissipation: 298W Gate charge: 185nC Polarisation: unipolar Technology: TrenchP™ Drain current: -120A Kind of channel: enhancement Drain-source voltage: -65V |
auf Bestellung 107 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA120P065T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263 Mounting: SMD Type of transistor: P-MOSFET Gate-source voltage: ±15V Kind of package: tube Case: TO263 On-state resistance: 10mΩ Reverse recovery time: 53ns Power dissipation: 298W Gate charge: 185nC Polarisation: unipolar Technology: TrenchP™ Drain current: -120A Kind of channel: enhancement Drain-source voltage: -65V |
auf Bestellung 264 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP3N120 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns Reverse recovery time: 700ns Mounting: THT Power dissipation: 200W Gate charge: 42nC Polarisation: unipolar Drain current: 3A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB On-state resistance: 4.5Ω |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP2R4N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W Reverse recovery time: 920ns Mounting: THT Pulsed drain current: 6A Power dissipation: 125W Gate charge: 37nC Polarisation: unipolar Technology: Polar™ Features of semiconductor devices: standard power mosfet Drain current: 2.4A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO220AB On-state resistance: 7.5Ω |
auf Bestellung 307 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DSEC60-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30Ax2; Ifsm: 200A; TO247-3; tube; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Max. forward impulse current: 200A Case: TO247-3 Kind of package: tube Max. forward voltage: 2.74V Power dissipation: 165W Reverse recovery time: 40ns Technology: HiPerFRED™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CS19-08ho1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; TO220AB; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 31A Load current: 20A Gate current: 28/50mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 155A |
auf Bestellung 109 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CS19-08HO1S-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; tube Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 31A Load current: 20A Gate current: 28/50mA Case: D2PAK Mounting: SMD Kind of package: tube Max. forward impulse current: 155A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CS19-08HO1S-TRL | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 31A Load current: 20A Gate current: 28/50mA Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 155A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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VHF25-08IO7 | IXYS |
Category: Single phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A Type of bridge rectifier: half-controlled Max. off-state voltage: 0.8kV Load current: 32A Max. forward impulse current: 180A Gate current: 25/50mA Electrical mounting: THT Mechanical mounting: screw Version: module Case: ECO-PAC 1 Leads: wire Ø 0.75mm Features of semiconductor devices: freewheelling diode |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| VHFD37-08IO1 | IXYS |
Category: Single phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 40A; Ifsm: 280A Type of bridge rectifier: half-controlled Max. off-state voltage: 0.8kV Load current: 40A Max. forward impulse current: 280A Gate current: 50/80mA Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Case: V1-A-Pack Leads: connectors Leads dimensions: 2x0.5mm Features of semiconductor devices: field diodes; freewheelling diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| VHFD16-12IO1 | IXYS |
Category: Single phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 21A; screw Type of bridge rectifier: half-controlled Max. off-state voltage: 1.2kV Load current: 21A Max. forward impulse current: 130A Gate current: 50/80mA Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Case: V1-A-Pack Leads: connectors Leads dimensions: 2x0.5mm Features of semiconductor devices: field diodes; freewheelling diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| VHFD16-16IO1 | IXYS |
Category: Single phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 21A; Igt: 65mA Type of bridge rectifier: half-controlled Max. off-state voltage: 1.6kV Load current: 21A Max. forward impulse current: 130A Gate current: 65mA Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Case: V1-A-Pack Leads: connectors Leads dimensions: 2x0.5mm Features of semiconductor devices: field diodes; freewheelling diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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VHFD37-12IO1 | IXYS |
Category: Single phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 40A; Igt: 65mA Type of bridge rectifier: half-controlled Max. off-state voltage: 1.2kV Load current: 40A Max. forward impulse current: 0.5kA Gate current: 65mA Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Case: V1-A-Pack Leads: connectors Leads dimensions: 2x0.5mm Features of semiconductor devices: field diodes; freewheelling diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH6N150 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 6A; 540W; TO247-3; 1.5us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 6A Power dissipation: 540W Case: TO247-3 Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.5µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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LDA200S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; Uinsul: 3.75kV; CTR@If: 33-1000%@1mA; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Collector-emitter voltage: 500mV Turn-on time: 7µs Turn-off time: 20µs Trigger current: 1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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LDA200STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; Uinsul: 3.75kV; CTR@If: 33-1000%@1mA; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Collector-emitter voltage: 500mV Turn-on time: 7µs Turn-off time: 20µs Trigger current: 1A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IX4310N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V Type of integrated circuit: driver Mounting: SMD Case: SO8 Operating temperature: -40...125°C Kind of package: tube Supply voltage: 5...24V Output current: -2...2A Kind of output: non-inverting Kind of integrated circuit: gate driver; low-side Number of channels: 2 |
auf Bestellung 1672 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP8N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 32W; TO220FP; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 32W Case: TO220FP On-state resistance: 0.55Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CLA80MT1200NHR | IXYS |
Category: Triacs Description: Triac; 1.2kV; 40A; Igt: 70/90mA; ISO247™; tube; Ifsm: 440A Max. forward impulse current: 0.44kA Gate current: 70/90mA Max. off-state voltage: 1.2kV Max. load current: 40A Kind of package: tube Case: ISO247™ Typ of triac: standard Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IX3407BTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; SOIC8; Ch: 1; 2.5kV; 1.25W Type of integrated circuit: driver Number of channels: 1 Mounting: SMD Case: SOIC8 Operating temperature: -40...125°C Pulse fall time: 10ns Impulse rise time: 10ns Power dissipation: 1.25W Insulation voltage: 2.5kV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXFH26N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 36A Power dissipation: 460W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP50N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: PolarHT™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CPC3909CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89 Kind of package: reel; tape Kind of channel: depletion Mounting: SMD Case: SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 0.3A Power dissipation: 1.1W On-state resistance: 9Ω Gate-source voltage: ±15V Drain-source voltage: 400V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MEE250-12DA | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 260A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 Max. forward impulse current: 2.4kA Max. forward voltage: 1.54V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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DHG55I3300FE | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 3.3kV; 50A; tube; Ifsm: 600A; Ufmax: 3.4V Type of diode: rectifying Mounting: THT Max. off-state voltage: 3.3kV Load current: 50A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 0.6kA Case: ISOPLUS i4-pac™ x024e Max. forward voltage: 3.4V Technology: Sonic FRD™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFN32N100Q3 | IXYS |
Category: Transistor modules Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 28A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.32Ω Pulsed drain current: 96A Power dissipation: 780W Technology: HiPerFET™; Q3-Class Kind of channel: enhancement Gate charge: 195nC Reverse recovery time: 300ns Gate-source voltage: ±40V Mechanical mounting: screw |
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CPC3710CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 0.22A; 1.4W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT89 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.4W Drain current: 0.22A Kind of channel: depletion Drain-source voltage: 250V Gate-source voltage: ±15V On-state resistance: 10Ω |
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VGB0124AY7A | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: braking rectifier assemblies; Urmax: 1.4kV Type of bridge rectifier: braking rectifier assemblies Max. off-state voltage: 1.4kV Load current: 1A Max. forward impulse current: 60A Electrical mounting: screw Mechanical mounting: screw Version: module Case: VG-A |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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| LDA102S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 50-350%@1mA; 50mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV CTR@If: 50-350%@1mA Collector-emitter voltage: 500mV Turn-on time: 7µs Turn-off time: 20µs Trigger current: 50mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MIXA61H1200ED | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Case: E2-Pack Application: motors; photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Mechanical mounting: screw Technology: Sonic FRD™; XPT™ Pulsed collector current: 150A Collector current: 60A Power dissipation: 290W |
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| MIXA61WB1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™ Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Case: E3-Pack Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: XPT™ Collector current: 190A |
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IXFR18N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 10.5A; Idm: 36A; 200W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 10.5A Pulsed drain current: 36A Power dissipation: 200W Case: ISOPLUS247™ Gate-source voltage: ±30V On-state resistance: 0.66Ω Mounting: THT Gate charge: 97nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns Technology: HiPerFET™; Polar™ |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYY8N90C3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252 Type of transistor: IGBT Power dissipation: 125W Case: TO252 Mounting: SMD Gate charge: 13.3nC Kind of package: tube Collector current: 8A Collector-emitter voltage: 900V Technology: GenX3™; Planar; XPT™ Pulsed collector current: 48A Turn-on time: 39ns Turn-off time: 238ns Gate-emitter voltage: ±20V |
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IXYA8N90C3D1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263 Type of transistor: IGBT Power dissipation: 125W Case: TO263 Mounting: SMD Gate charge: 13.3nC Kind of package: tube Collector current: 8A Collector-emitter voltage: 900V Technology: GenX3™; Planar; XPT™ Pulsed collector current: 48A Turn-on time: 39ns Turn-off time: 238ns Gate-emitter voltage: ±20V |
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IXYY8N90C3-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 900V; 20A; 125W; DPAK Type of transistor: IGBT Power dissipation: 125W Case: DPAK Mounting: SMD Gate charge: 13.3nC Kind of package: reel; tape Collector current: 20A Collector-emitter voltage: 900V Pulsed collector current: 48A Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFH18N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 18A Power dissipation: 540W Case: TO247-3 On-state resistance: 0.6Ω Mounting: THT Gate charge: 97nC Kind of package: tube Kind of channel: enhancement |
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Im Einkaufswagen Stück im Wert von UAH |
| DHG20C1200PB |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10Ax2; tube; Ifsm: 60A; TO220AB; 85W
Type of diode: rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 2.23V
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10Ax2; tube; Ifsm: 60A; TO220AB; 85W
Type of diode: rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 2.23V
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
Produkt ist nicht verfügbar
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| DPU30I1200PA |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 250A; TO220-2; 123ns
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Kind of package: tube
Reverse recovery time: 123ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 250A; TO220-2; 123ns
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Kind of package: tube
Reverse recovery time: 123ns
Technology: FRED
Produkt ist nicht verfügbar
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| IXA20I1200PB |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 47nC
Turn-on time: 110ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 22A
Power dissipation: 165W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 47nC
Turn-on time: 110ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 22A
Power dissipation: 165W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Type of transistor: IGBT
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| MIXA80W1200PTEH |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 84A
Technology: XPT™
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 84A
Technology: XPT™
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
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| MIXG120W1200PTEH |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 140A
Technology: X2PT
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 140A
Technology: X2PT
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
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| DSEE30-12A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO247-3; tube; 165W
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.5V
Power dissipation: 165W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: tube
Semiconductor structure: double series
Type of diode: rectifying
Reverse recovery time: 30ns
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO247-3; tube; 165W
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.5V
Power dissipation: 165W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: tube
Semiconductor structure: double series
Type of diode: rectifying
Reverse recovery time: 30ns
Mounting: THT
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| MEE300-06DA |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Max. forward impulse current: 2.4kA
Max. forward voltage: 1.19V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 304A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Max. forward impulse current: 2.4kA
Max. forward voltage: 1.19V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 304A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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| IXXH80N65B4D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Turn-on time: 125ns
Turn-off time: 222ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Turn-on time: 125ns
Turn-off time: 222ns
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| IXXH80N65B4H1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Turn-on time: 123ns
Turn-off time: 147ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Turn-on time: 123ns
Turn-off time: 147ns
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| MCC56-12io1B |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.62kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.62kA
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| MCC56-12io8B |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.5kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.5kA
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| MCC56-18io1B |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.6kA
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.6kA
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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| MCC56-08io1B |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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| MCC56-08io8B |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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| MCC56-14IO1 |
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 36 Stücke
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| MCC56-14io8B |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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| MCC56-18io8B |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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| IXYK180N65A5 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 180A; 1.15kW; TO264
Type of transistor: IGBT
Power dissipation: 1.15kW
Case: TO264
Mounting: THT
Kind of package: tube
Pulsed collector current: 1kA
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Collector current: 180A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 180A; 1.15kW; TO264
Type of transistor: IGBT
Power dissipation: 1.15kW
Case: TO264
Mounting: THT
Kind of package: tube
Pulsed collector current: 1kA
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Collector current: 180A
Collector-emitter voltage: 650V
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| IXYN180N65A5 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; Ic: 180A; SOT227B; tube; screw
Case: SOT227B
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 180A
Collector-emitter voltage: 650V
Type of semiconductor module: IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; Ic: 180A; SOT227B; tube; screw
Case: SOT227B
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 180A
Collector-emitter voltage: 650V
Type of semiconductor module: IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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| IXYX180N65A5 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 220A; 1.15kW; TO247-3
Type of transistor: IGBT
Power dissipation: 1.15kW
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 1kA
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Collector current: 220A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 220A; 1.15kW; TO247-3
Type of transistor: IGBT
Power dissipation: 1.15kW
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 1kA
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Collector current: 220A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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| DFE240X600NA |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw
Max. load current: 240A
Max. off-state voltage: 0.6kV
Type of semiconductor module: diode
Max. forward impulse current: 1.2kA
Semiconductor structure: double independent
Technology: FRED
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.2V
Load current: 120A x2
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw
Max. load current: 240A
Max. off-state voltage: 0.6kV
Type of semiconductor module: diode
Max. forward impulse current: 1.2kA
Semiconductor structure: double independent
Technology: FRED
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.2V
Load current: 120A x2
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| IXBH24N170 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Collector current: 24A
Pulsed collector current: 230A
Gate-emitter voltage: ±20V
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Collector current: 24A
Pulsed collector current: 230A
Gate-emitter voltage: ±20V
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IXBH22N300HV |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 60A; 290W; TO247HV
Mounting: THT
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Collector current: 60A
Power dissipation: 290W
Collector-emitter voltage: 3kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 60A; 290W; TO247HV
Mounting: THT
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Collector current: 60A
Power dissipation: 290W
Collector-emitter voltage: 3kV
Produkt ist nicht verfügbar
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| IXBH2N250 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 10.6nC
Turn-on time: 310ns
Turn-off time: 252ns
Collector current: 2A
Pulsed collector current: 13A
Gate-emitter voltage: ±20V
Power dissipation: 32W
Collector-emitter voltage: 2.5kV
Technology: BiMOSFET™
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 10.6nC
Turn-on time: 310ns
Turn-off time: 252ns
Collector current: 2A
Pulsed collector current: 13A
Gate-emitter voltage: ±20V
Power dissipation: 32W
Collector-emitter voltage: 2.5kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
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| IXTH120P065T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Mounting: THT
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO247-3
On-state resistance: 10mΩ
Reverse recovery time: 53ns
Power dissipation: 298W
Gate charge: 185nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -65V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Mounting: THT
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO247-3
On-state resistance: 10mΩ
Reverse recovery time: 53ns
Power dissipation: 298W
Gate charge: 185nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -65V
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA120P065T |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Mounting: SMD
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO263
On-state resistance: 10mΩ
Reverse recovery time: 53ns
Power dissipation: 298W
Gate charge: 185nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -65V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Mounting: SMD
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO263
On-state resistance: 10mΩ
Reverse recovery time: 53ns
Power dissipation: 298W
Gate charge: 185nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -65V
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTP3N120 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Reverse recovery time: 700ns
Mounting: THT
Power dissipation: 200W
Gate charge: 42nC
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 4.5Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Reverse recovery time: 700ns
Mounting: THT
Power dissipation: 200W
Gate charge: 42nC
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 4.5Ω
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTP2R4N120P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Reverse recovery time: 920ns
Mounting: THT
Pulsed drain current: 6A
Power dissipation: 125W
Gate charge: 37nC
Polarisation: unipolar
Technology: Polar™
Features of semiconductor devices: standard power mosfet
Drain current: 2.4A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
On-state resistance: 7.5Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Reverse recovery time: 920ns
Mounting: THT
Pulsed drain current: 6A
Power dissipation: 125W
Gate charge: 37nC
Polarisation: unipolar
Technology: Polar™
Features of semiconductor devices: standard power mosfet
Drain current: 2.4A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
On-state resistance: 7.5Ω
auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEC60-12A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30Ax2; Ifsm: 200A; TO247-3; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 2.74V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30Ax2; Ifsm: 200A; TO247-3; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 2.74V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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| CS19-08ho1 |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)
| CS19-08HO1S-TUB |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 155A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 155A
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| CS19-08HO1S-TRL |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 155A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 155A
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| VHF25-08IO7 |
|
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 32A
Max. forward impulse current: 180A
Gate current: 25/50mA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 32A
Max. forward impulse current: 180A
Gate current: 25/50mA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| VHFD37-08IO1 |
|
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 40A; Ifsm: 280A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 40A
Max. forward impulse current: 280A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 40A; Ifsm: 280A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 40A
Max. forward impulse current: 280A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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| VHFD16-12IO1 |
|
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 21A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 21A
Max. forward impulse current: 130A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 21A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 21A
Max. forward impulse current: 130A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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| VHFD16-16IO1 |
|
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 21A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 21A
Max. forward impulse current: 130A
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 21A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 21A
Max. forward impulse current: 130A
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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| VHFD37-12IO1 |
|
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 40A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.5kA
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 40A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.5kA
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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| IXTH6N150 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 6A; 540W; TO247-3; 1.5us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 6A
Power dissipation: 540W
Case: TO247-3
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 6A; 540W; TO247-3; 1.5us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 6A
Power dissipation: 540W
Case: TO247-3
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.5µs
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| LDA200S |
|
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; Uinsul: 3.75kV; CTR@If: 33-1000%@1mA; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Collector-emitter voltage: 500mV
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; Uinsul: 3.75kV; CTR@If: 33-1000%@1mA; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Collector-emitter voltage: 500mV
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
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| LDA200STR |
|
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; Uinsul: 3.75kV; CTR@If: 33-1000%@1mA; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Collector-emitter voltage: 500mV
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; Uinsul: 3.75kV; CTR@If: 33-1000%@1mA; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Collector-emitter voltage: 500mV
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| IX4310N |
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...24V
Output current: -2...2A
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...24V
Output current: -2...2A
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
auf Bestellung 1672 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTP8N65X2M |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 32W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 32W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
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| CLA80MT1200NHR |
|
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 40A; Igt: 70/90mA; ISO247™; tube; Ifsm: 440A
Max. forward impulse current: 0.44kA
Gate current: 70/90mA
Max. off-state voltage: 1.2kV
Max. load current: 40A
Kind of package: tube
Case: ISO247™
Typ of triac: standard
Mounting: THT
Category: Triacs
Description: Triac; 1.2kV; 40A; Igt: 70/90mA; ISO247™; tube; Ifsm: 440A
Max. forward impulse current: 0.44kA
Gate current: 70/90mA
Max. off-state voltage: 1.2kV
Max. load current: 40A
Kind of package: tube
Case: ISO247™
Typ of triac: standard
Mounting: THT
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| IX3407BTR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; SOIC8; Ch: 1; 2.5kV; 1.25W
Type of integrated circuit: driver
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...125°C
Pulse fall time: 10ns
Impulse rise time: 10ns
Power dissipation: 1.25W
Insulation voltage: 2.5kV
Category: MOSFET/IGBT drivers
Description: IC: driver; SOIC8; Ch: 1; 2.5kV; 1.25W
Type of integrated circuit: driver
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...125°C
Pulse fall time: 10ns
Impulse rise time: 10ns
Power dissipation: 1.25W
Insulation voltage: 2.5kV
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| IXFH26N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
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| IXTP50N20P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
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| CPC3909CTR |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89
Kind of package: reel; tape
Kind of channel: depletion
Mounting: SMD
Case: SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.3A
Power dissipation: 1.1W
On-state resistance: 9Ω
Gate-source voltage: ±15V
Drain-source voltage: 400V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89
Kind of package: reel; tape
Kind of channel: depletion
Mounting: SMD
Case: SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.3A
Power dissipation: 1.1W
On-state resistance: 9Ω
Gate-source voltage: ±15V
Drain-source voltage: 400V
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| MEE250-12DA |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 260A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 2.4kA
Max. forward voltage: 1.54V
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 260A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 2.4kA
Max. forward voltage: 1.54V
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| DHG55I3300FE |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 3.3kV; 50A; tube; Ifsm: 600A; Ufmax: 3.4V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 3.3kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.6kA
Case: ISOPLUS i4-pac™ x024e
Max. forward voltage: 3.4V
Technology: Sonic FRD™
Category: THT universal diodes
Description: Diode: rectifying; THT; 3.3kV; 50A; tube; Ifsm: 600A; Ufmax: 3.4V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 3.3kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.6kA
Case: ISOPLUS i4-pac™ x024e
Max. forward voltage: 3.4V
Technology: Sonic FRD™
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| IXFN32N100Q3 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.32Ω
Pulsed drain current: 96A
Power dissipation: 780W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhancement
Gate charge: 195nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.32Ω
Pulsed drain current: 96A
Power dissipation: 780W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhancement
Gate charge: 195nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
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| CPC3710CTR |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.22A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Drain current: 0.22A
Kind of channel: depletion
Drain-source voltage: 250V
Gate-source voltage: ±15V
On-state resistance: 10Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.22A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Drain current: 0.22A
Kind of channel: depletion
Drain-source voltage: 250V
Gate-source voltage: ±15V
On-state resistance: 10Ω
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| VGB0124AY7A |
|
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: braking rectifier assemblies; Urmax: 1.4kV
Type of bridge rectifier: braking rectifier assemblies
Max. off-state voltage: 1.4kV
Load current: 1A
Max. forward impulse current: 60A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Case: VG-A
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: braking rectifier assemblies; Urmax: 1.4kV
Type of bridge rectifier: braking rectifier assemblies
Max. off-state voltage: 1.4kV
Load current: 1A
Max. forward impulse current: 60A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Case: VG-A
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
| LDA102S |
|
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 50-350%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Collector-emitter voltage: 500mV
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 50-350%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Collector-emitter voltage: 500mV
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
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Mindestbestellmenge: 100 Stücke
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| MIXA61H1200ED |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Pulsed collector current: 150A
Collector current: 60A
Power dissipation: 290W
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Pulsed collector current: 150A
Collector current: 60A
Power dissipation: 290W
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| MIXA61WB1200TEH |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Case: E3-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: XPT™
Collector current: 190A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Case: E3-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: XPT™
Collector current: 190A
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| IXFR18N90P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 10.5A; Idm: 36A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 10.5A
Pulsed drain current: 36A
Power dissipation: 200W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 10.5A; Idm: 36A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 10.5A
Pulsed drain current: 36A
Power dissipation: 200W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYY8N90C3 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252
Type of transistor: IGBT
Power dissipation: 125W
Case: TO252
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector current: 8A
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252
Type of transistor: IGBT
Power dissipation: 125W
Case: TO252
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector current: 8A
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Gate-emitter voltage: ±20V
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| IXYA8N90C3D1 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector current: 8A
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector current: 8A
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Gate-emitter voltage: ±20V
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| IXYY8N90C3-TRL |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 900V; 20A; 125W; DPAK
Type of transistor: IGBT
Power dissipation: 125W
Case: DPAK
Mounting: SMD
Gate charge: 13.3nC
Kind of package: reel; tape
Collector current: 20A
Collector-emitter voltage: 900V
Pulsed collector current: 48A
Gate-emitter voltage: ±20V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 900V; 20A; 125W; DPAK
Type of transistor: IGBT
Power dissipation: 125W
Case: DPAK
Mounting: SMD
Gate charge: 13.3nC
Kind of package: reel; tape
Collector current: 20A
Collector-emitter voltage: 900V
Pulsed collector current: 48A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IXFH18N90P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 18A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 18A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
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