Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTP50N25T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO220AB On-state resistance: 60mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 166ns Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
auf Bestellung 341 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP52P10P | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXTP56N15T | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXTP60N10T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 176W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 49nC Kind of channel: enhancement Mounting: THT Case: TO220AB Reverse recovery time: 59ns Drain-source voltage: 100V Drain current: 60A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 298 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP60N20T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 500W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 73nC Kind of channel: enhancement Mounting: THT Case: TO220AB Reverse recovery time: 118ns Drain-source voltage: 200V Drain current: 60A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 234 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP62N15P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO220AB Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 62A Power dissipation: 350W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 267 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP6N100D2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 6A Power dissipation: 300W Case: TO220AB On-state resistance: 2.2Ω Mounting: THT Kind of package: tube Kind of channel: depletion Reverse recovery time: 41ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 350 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP6N50D2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 6A Power dissipation: 300W Case: TO220AB On-state resistance: 0.5Ω Mounting: THT Kind of package: tube Kind of channel: depletion Reverse recovery time: 64ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 162 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP70N075T2 | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXTP75N10P | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXTP76N25T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO220AB; 148ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 76A Power dissipation: 460W Case: TO220AB On-state resistance: 44mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 148ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTP76P10T | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; 70ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -76A Power dissipation: 298W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 25mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 70ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 313 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP80N075L2 | IXYS |
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auf Bestellung 199 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP80N10T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns Drain-source voltage: 100V Drain current: 80A Case: TO220AB Polarisation: unipolar On-state resistance: 14mΩ Power dissipation: 230W Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 60nC Kind of channel: enhancement Mounting: THT Reverse recovery time: 100ns Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 127 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP80N12T2 | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXTP86N20T | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXTP8N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTP8N65X2M | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 32W; TO220FP; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 32W Case: TO220FP On-state resistance: 0.55Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns Features of semiconductor devices: ultra junction x-class Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IXTP8N70X2 | IXYS |
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auf Bestellung 233 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP8N70X2M | IXYS |
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auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP90N055T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns Power dissipation: 150W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 42nC Kind of channel: enhancement Mounting: THT Case: TO220AB Reverse recovery time: 37ns Drain-source voltage: 55V Drain current: 90A On-state resistance: 8.4mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 292 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP96P085T | IXYS |
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auf Bestellung 240 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ10P50P | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXTQ110N10P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 480W Case: TO3P Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Technology: PolarHT™ Reverse recovery time: 130ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IXTQ120N15P | IXYS |
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auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ120N20P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P Case: TO3P Mounting: THT Reverse recovery time: 180ns Drain-source voltage: 200V Drain current: 120A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 714W Polarisation: unipolar Kind of package: tube Gate charge: 152nC Technology: PolarHT™ Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ130N20T | IXYS |
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auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ140N10P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: TO3P Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhancement Technology: PolarHT™ Reverse recovery time: 120ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IXTQ14N60P | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXTQ150N15P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P Case: TO3P Reverse recovery time: 150ns Drain-source voltage: 150V Drain current: 150A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 714W Polarisation: unipolar Kind of package: tube Gate charge: 0.19µC Technology: PolarHT™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ16N50P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 300W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement Technology: PolarHT™ Reverse recovery time: 400ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IXTQ170N10P | IXYS |
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auf Bestellung 301 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ18N60P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 360W Case: TO3P On-state resistance: 0.42Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 49nC Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTQ200N10T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns Drain-source voltage: 100V Drain current: 200A Case: TO3P Polarisation: unipolar On-state resistance: 5.5mΩ Power dissipation: 550W Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 152nC Kind of channel: enhancement Mounting: THT Reverse recovery time: 76ns Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ22N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 350W Case: TO3P Mounting: THT Kind of package: tube On-state resistance: 0.27Ω Features of semiconductor devices: standard power mosfet Gate charge: 50nC Kind of channel: enhancement Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 22A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 111 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ22N60P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 400W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IXTQ26N50P | IXYS |
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auf Bestellung 276 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ26N60P | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXTQ26P20P | IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P Mounting: THT Case: TO3P Kind of package: tube Gate charge: 56nC Technology: PolarP™ Kind of channel: enhancement Gate-source voltage: ±20V Reverse recovery time: 240ns Drain-source voltage: -200V Drain current: -26A On-state resistance: 0.17Ω Type of transistor: P-MOSFET Power dissipation: 300W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IXTQ30N50L | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXTQ30N50L2 | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXTQ30N50P | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXTQ30N60L2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Case: TO3P On-state resistance: 0.24Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 540W Features of semiconductor devices: linear power mosfet Gate charge: 335nC Reverse recovery time: 710ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTQ30N60P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Case: TO3P On-state resistance: 0.24Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 540W Features of semiconductor devices: standard power mosfet Gate charge: 82nC Reverse recovery time: 0.5µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IXTQ32N65X | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXTQ34N65X2M | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 40W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 96mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ36N30P | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXTQ36N50P | IXYS |
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auf Bestellung 298 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ36P15P | IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -36A Power dissipation: 300W Case: TO3P Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: THT Gate charge: 55nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 228ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IXTQ3N150M | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 1.83A Pulsed drain current: 9A Power dissipation: 73W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 7.3Ω Mounting: THT Gate charge: 38.6nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 900ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IXTQ40N50L2 | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXTQ44N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 650W Case: TO3P On-state resistance: 0.14Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 400ns Features of semiconductor devices: standard power mosfet Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IXTQ44P15T | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXTQ450P2 | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXTQ460P2 | IXYS |
![]() Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P On-state resistance: 0.27Ω Type of transistor: N-MOSFET Power dissipation: 480W Polarisation: unipolar Kind of package: tube Gate charge: 48nC Technology: Polar2™ Kind of channel: enhancement Gate-source voltage: ±30V Mounting: THT Case: TO3P Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 24A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 163 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ470P2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns Case: TO3P Mounting: THT On-state resistance: 0.145Ω Kind of package: tube Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 42A Type of transistor: N-MOSFET Power dissipation: 830W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Gate charge: 88nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IXTQ480P2 | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXTQ48N20T | IXYS | IXTQ48N20T THT N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IXTQ48N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 48A Pulsed drain current: 70A Power dissipation: 70W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 17 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ50N20P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO3P Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 264 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP50N25T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
auf Bestellung 341 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
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12+ | 6.48 EUR |
17+ | 4.3 EUR |
18+ | 4.06 EUR |
50+ | 3.9 EUR |
IXTP52P10P |
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Hersteller: IXYS
IXTP52P10P THT P channel transistors
IXTP52P10P THT P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTP56N15T |
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Hersteller: IXYS
IXTP56N15T THT N channel transistors
IXTP56N15T THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTP60N10T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 59ns
Drain-source voltage: 100V
Drain current: 60A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 59ns
Drain-source voltage: 100V
Drain current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 298 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.67 EUR |
40+ | 1.8 EUR |
43+ | 1.7 EUR |
100+ | 1.64 EUR |
IXTP60N20T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 118ns
Drain-source voltage: 200V
Drain current: 60A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 118ns
Drain-source voltage: 200V
Drain current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 234 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.88 EUR |
15+ | 4.93 EUR |
16+ | 4.66 EUR |
IXTP62N15P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 267 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.53 EUR |
21+ | 3.53 EUR |
22+ | 3.35 EUR |
IXTP6N100D2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 350 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.21 EUR |
9+ | 8.28 EUR |
10+ | 7.84 EUR |
50+ | 7.71 EUR |
IXTP6N50D2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 162 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.62 EUR |
12+ | 6.29 EUR |
13+ | 5.95 EUR |
IXTP70N075T2 |
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Hersteller: IXYS
IXTP70N075T2 THT N channel transistors
IXTP70N075T2 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTP75N10P |
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Hersteller: IXYS
IXTP75N10P THT N channel transistors
IXTP75N10P THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTP76N25T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO220AB; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO220AB
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO220AB; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO220AB
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTP76P10T |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 313 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.21 EUR |
15+ | 5 EUR |
16+ | 4.73 EUR |
500+ | 4.56 EUR |
IXTP80N075L2 |
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Hersteller: IXYS
IXTP80N075L2 THT N channel transistors
IXTP80N075L2 THT N channel transistors
auf Bestellung 199 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.9 EUR |
11+ | 6.71 EUR |
12+ | 6.33 EUR |
1000+ | 6.23 EUR |
IXTP80N10T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Drain-source voltage: 100V
Drain current: 80A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 14mΩ
Power dissipation: 230W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 60nC
Kind of channel: enhancement
Mounting: THT
Reverse recovery time: 100ns
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Drain-source voltage: 100V
Drain current: 80A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 14mΩ
Power dissipation: 230W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 60nC
Kind of channel: enhancement
Mounting: THT
Reverse recovery time: 100ns
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 127 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.92 EUR |
27+ | 2.67 EUR |
29+ | 2.53 EUR |
500+ | 2.43 EUR |
IXTP80N12T2 |
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Hersteller: IXYS
IXTP80N12T2 THT N channel transistors
IXTP80N12T2 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTP86N20T |
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Hersteller: IXYS
IXTP86N20T THT N channel transistors
IXTP86N20T THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTP8N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Anzahl je Verpackung: 300 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Anzahl je Verpackung: 300 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTP8N65X2M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 32W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 32W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTP8N70X2 |
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Hersteller: IXYS
IXTP8N70X2 THT N channel transistors
IXTP8N70X2 THT N channel transistors
auf Bestellung 233 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.45 EUR |
24+ | 3.03 EUR |
25+ | 2.86 EUR |
IXTP8N70X2M |
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Hersteller: IXYS
IXTP8N70X2M THT N channel transistors
IXTP8N70X2M THT N channel transistors
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
7+ | 10.21 EUR |
20+ | 3.58 EUR |
50+ | 2.37 EUR |
IXTP90N055T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 42nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 37ns
Drain-source voltage: 55V
Drain current: 90A
On-state resistance: 8.4mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 42nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 37ns
Drain-source voltage: 55V
Drain current: 90A
On-state resistance: 8.4mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 292 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.93 EUR |
41+ | 1.76 EUR |
44+ | 1.66 EUR |
500+ | 1.6 EUR |
IXTP96P085T |
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Hersteller: IXYS
IXTP96P085T THT P channel transistors
IXTP96P085T THT P channel transistors
auf Bestellung 240 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.41 EUR |
15+ | 4.99 EUR |
16+ | 4.7 EUR |
IXTQ10P50P |
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Hersteller: IXYS
IXTQ10P50P THT P channel transistors
IXTQ10P50P THT P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ110N10P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ120N15P |
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Hersteller: IXYS
IXTQ120N15P THT N channel transistors
IXTQ120N15P THT N channel transistors
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.93 EUR |
8+ | 8.94 EUR |
30+ | 7.81 EUR |
IXTQ120N20P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Case: TO3P
Mounting: THT
Reverse recovery time: 180ns
Drain-source voltage: 200V
Drain current: 120A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 714W
Polarisation: unipolar
Kind of package: tube
Gate charge: 152nC
Technology: PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Case: TO3P
Mounting: THT
Reverse recovery time: 180ns
Drain-source voltage: 200V
Drain current: 120A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 714W
Polarisation: unipolar
Kind of package: tube
Gate charge: 152nC
Technology: PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
5+ | 14.3 EUR |
120+ | 9.25 EUR |
IXTQ130N20T |
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Hersteller: IXYS
IXTQ130N20T THT N channel transistors
IXTQ130N20T THT N channel transistors
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.01 EUR |
9+ | 8.17 EUR |
10+ | 7.72 EUR |
IXTQ140N10P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 120ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 120ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ14N60P |
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Hersteller: IXYS
IXTQ14N60P THT N channel transistors
IXTQ14N60P THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ150N15P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Case: TO3P
Reverse recovery time: 150ns
Drain-source voltage: 150V
Drain current: 150A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 714W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.19µC
Technology: PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Case: TO3P
Reverse recovery time: 150ns
Drain-source voltage: 150V
Drain current: 150A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 714W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.19µC
Technology: PolarHT™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
IXTQ16N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 400ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 400ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ170N10P |
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Hersteller: IXYS
IXTQ170N10P THT N channel transistors
IXTQ170N10P THT N channel transistors
auf Bestellung 301 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.44 EUR |
8+ | 9.31 EUR |
IXTQ18N60P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO3P
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 49nC
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO3P
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 49nC
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ200N10T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Drain-source voltage: 100V
Drain current: 200A
Case: TO3P
Polarisation: unipolar
On-state resistance: 5.5mΩ
Power dissipation: 550W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 152nC
Kind of channel: enhancement
Mounting: THT
Reverse recovery time: 76ns
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Drain-source voltage: 100V
Drain current: 200A
Case: TO3P
Polarisation: unipolar
On-state resistance: 5.5mΩ
Power dissipation: 550W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 152nC
Kind of channel: enhancement
Mounting: THT
Reverse recovery time: 76ns
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 11.91 EUR |
8+ | 8.94 EUR |
IXTQ22N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 350W
Case: TO3P
Mounting: THT
Kind of package: tube
On-state resistance: 0.27Ω
Features of semiconductor devices: standard power mosfet
Gate charge: 50nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 22A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 350W
Case: TO3P
Mounting: THT
Kind of package: tube
On-state resistance: 0.27Ω
Features of semiconductor devices: standard power mosfet
Gate charge: 50nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 22A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 111 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.15 EUR |
16+ | 4.53 EUR |
17+ | 4.29 EUR |
510+ | 4.26 EUR |
1020+ | 4.13 EUR |
IXTQ22N60P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ26N50P |
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Hersteller: IXYS
IXTQ26N50P THT N channel transistors
IXTQ26N50P THT N channel transistors
auf Bestellung 276 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.35 EUR |
12+ | 5.96 EUR |
IXTQ26N60P |
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Hersteller: IXYS
IXTQ26N60P THT N channel transistors
IXTQ26N60P THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ26P20P |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Gate charge: 56nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 240ns
Drain-source voltage: -200V
Drain current: -26A
On-state resistance: 0.17Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Gate charge: 56nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 240ns
Drain-source voltage: -200V
Drain current: -26A
On-state resistance: 0.17Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ30N50L |
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Hersteller: IXYS
IXTQ30N50L THT N channel transistors
IXTQ30N50L THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ30N50L2 |
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Hersteller: IXYS
IXTQ30N50L2 THT N channel transistors
IXTQ30N50L2 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ30N50P |
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Hersteller: IXYS
IXTQ30N50P THT N channel transistors
IXTQ30N50P THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ30N60L2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
Reverse recovery time: 710ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
Reverse recovery time: 710ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ30N60P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Reverse recovery time: 0.5µs
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Reverse recovery time: 0.5µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ32N65X |
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Hersteller: IXYS
IXTQ32N65X THT N channel transistors
IXTQ32N65X THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ34N65X2M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.55 EUR |
9+ | 7.98 EUR |
IXTQ36N30P |
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Hersteller: IXYS
IXTQ36N30P THT N channel transistors
IXTQ36N30P THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ36N50P |
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Hersteller: IXYS
IXTQ36N50P THT N channel transistors
IXTQ36N50P THT N channel transistors
auf Bestellung 298 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 16.16 EUR |
7+ | 10.37 EUR |
IXTQ36P15P |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ3N150M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.83A
Pulsed drain current: 9A
Power dissipation: 73W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 7.3Ω
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.83A
Pulsed drain current: 9A
Power dissipation: 73W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 7.3Ω
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ40N50L2 |
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Hersteller: IXYS
IXTQ40N50L2 THT N channel transistors
IXTQ40N50L2 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ44N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ44P15T |
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Hersteller: IXYS
IXTQ44P15T THT P channel transistors
IXTQ44P15T THT P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ450P2 |
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Hersteller: IXYS
IXTQ450P2 THT N channel transistors
IXTQ450P2 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ460P2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Gate charge: 48nC
Technology: Polar2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO3P
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 24A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Gate charge: 48nC
Technology: Polar2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO3P
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 24A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 163 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.35 EUR |
14+ | 5.32 EUR |
15+ | 5.03 EUR |
30+ | 4.93 EUR |
IXTQ470P2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 42A
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 42A
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ480P2 |
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Hersteller: IXYS
IXTQ480P2 THT N channel transistors
IXTQ480P2 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ48N20T |
Hersteller: IXYS
IXTQ48N20T THT N channel transistors
IXTQ48N20T THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXTQ48N65X2M |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 14.13 EUR |
8+ | 9.61 EUR |
IXTQ50N20P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 264 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.62 EUR |
19+ | 3.95 EUR |
20+ | 3.73 EUR |
510+ | 3.59 EUR |