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IXYH24N90C3D1

IXYH24N90C3D1 IXYS


littelfuse_discrete_igbts_xpt_ixyh24n90c3d1_datasheet.pdf.pdf Hersteller: IXYS
Description: IGBT 900V 44A 200W C3 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/73ns
Switching Energy: 1.35mJ (on), 400µJ (off)
Test Condition: 450V, 24A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 44 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
auf Bestellung 1 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+19.47 EUR
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Technische Details IXYH24N90C3D1 IXYS

Description: IGBT 900V 44A 200W C3 TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 340 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A, Supplier Device Package: TO-247 (IXTH), Td (on/off) @ 25°C: 20ns/73ns, Switching Energy: 1.35mJ (on), 400µJ (off), Test Condition: 450V, 24A, 10Ohm, 15V, Gate Charge: 40 nC, Part Status: Active, Current - Collector (Ic) (Max): 44 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 105 A, Power - Max: 200 W.

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IXYH24N90C3D1 IXYH24N90C3D1 Hersteller : IXYS media-3322148.pdf IGBT Transistors 900V 24A 2.7V XPT IGBTs GenX3 w/ Diode
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+19.61 EUR
10+ 16.81 EUR
30+ 15.98 EUR
120+ 13.32 EUR
270+ 12 EUR
510+ 11.4 EUR
1020+ 10.88 EUR
IXYH24N90C3D1 IXYH24N90C3D1 Hersteller : Littelfuse ittelfuse_discrete_igbts_xpt_ixyh24n90c3d1_datasheet.pdf.pdf Trans IGBT Chip N-CH 900V 44A 200000mW 3-Pin(3+Tab) TO-247
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IXYH24N90C3D1 IXYH24N90C3D1 Hersteller : IXYS IXYH24N90C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH24N90C3D1 IXYH24N90C3D1 Hersteller : IXYS IXYH24N90C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Produkt ist nicht verfügbar