IXFP5N100P IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 250W
Case: TO220AB
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 12+ | 6.13 EUR |
| 15+ | 4.78 EUR |
| 50+ | 3.63 EUR |
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Technische Details IXFP5N100P IXYS
Description: MOSFET N-CH 1000V 5A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 2.8Ohm @ 500mA, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 6V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V.
Weitere Produktangebote IXFP5N100P nach Preis ab 5.28 EUR bis 10.81 EUR
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IXFP5N100P | Hersteller : IXYS |
MOSFETs 5 Amps 1000V |
auf Bestellung 319 Stücke: Lieferzeit 10-14 Tag (e) |
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