IXGX120N120A3 IXYS
Hersteller: IXYSDescription: IGBT PT 1200V 240A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
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Technische Details IXGX120N120A3 IXYS
Description: IGBT PT 1200V 240A PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 40ns/490ns, Switching Energy: 10mJ (on), 33mJ (off), Test Condition: 960V, 100A, 1Ohm, 15V, Gate Charge: 420 nC, Part Status: Active, Current - Collector (Ic) (Max): 240 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 600 A, Power - Max: 830 W.
Weitere Produktangebote IXGX120N120A3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXGX120N120A3 | Hersteller : IXYS |
IGBTs 120 Amps 1200V |
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IXGX120N120A3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™ Kind of package: tube Turn-on time: 105ns Gate charge: 420nC Turn-off time: 1365ns Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 600A Collector-emitter voltage: 1.2kV Power dissipation: 830W Technology: GenX3™; PT Type of transistor: IGBT Case: PLUS247™ Mounting: THT |
Produkt ist nicht verfügbar |