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IXYP15N65C3D1M

IXYP15N65C3D1M IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE4058AF680B820&compId=IXYP15N65C3D1M.pdf?ci_sign=71e42345e6a97e4ab412adb420898f2de3276576 Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Case: TO220FP
Mounting: THT
Kind of package: tube
Power dissipation: 57W
Gate charge: 19nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 9A
Pulsed collector current: 80A
Turn-on time: 36ns
Turn-off time: 122ns
Anzahl je Verpackung: 1 Stücke
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Technische Details IXYP15N65C3D1M IXYS

Description: IGBT PT 650V 16A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 30 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A, Supplier Device Package: TO-220-3, IGBT Type: PT, Td (on/off) @ 25°C: 15ns/68ns, Switching Energy: 270µJ (on), 230µJ (off), Test Condition: 400V, 15A, 20Ohm, 15V, Gate Charge: 19 nC, Part Status: Active, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 48 W.

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IXYP15N65C3D1M IXYP15N65C3D1M Hersteller : IXYS littelfuse-discrete-igbts-ixyp15n65c3d1m-datasheet?assetguid=9810358b-0d4f-49a1-a56d-9255a99c4d1e Description: IGBT PT 650V 16A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 48 W
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IXYP15N65C3D1M IXYP15N65C3D1M Hersteller : IXYS media-3322158.pdf IGBTs 650V/16A XPT IGBT C3 Copacked TO-220
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IXYP15N65C3D1M IXYP15N65C3D1M Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE4058AF680B820&compId=IXYP15N65C3D1M.pdf?ci_sign=71e42345e6a97e4ab412adb420898f2de3276576 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Case: TO220FP
Mounting: THT
Kind of package: tube
Power dissipation: 57W
Gate charge: 19nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 9A
Pulsed collector current: 80A
Turn-on time: 36ns
Turn-off time: 122ns
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