IXKC40N60C
Hersteller:
CoolMOS Power MOSFET ISOPLUS220 Транзистори
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Technische Details IXKC40N60C
Description: MOSFET N-CH 600V 28A ISOPLUS220, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ISOPLUS220™, Vgs(th) (Max) @ Id: 3.9V @ 2mA, Rds On (Max) @ Id, Vgs: 95mOhm @ 28A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: ISOPLUS220™, Packaging: Tube.
Weitere Produktangebote IXKC40N60C
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IXKC40N60C | Hersteller : IXYS |
Description: MOSFET N-CH 600V 28A ISOPLUS220 Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: ISOPLUS220™ Vgs(th) (Max) @ Id: 3.9V @ 2mA Rds On (Max) @ Id, Vgs: 95mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS220™ Packaging: Tube |
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IXKC40N60C | Hersteller : IXYS |
MOSFET 28 Amps 600V 0.1 Rds |
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| IXKC40N60C | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; ISOPLUS220™; 800ns Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Case: ISOPLUS220™ Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 800ns |
Produkt ist nicht verfügbar |