IXYP15N65C3 IXYS
Hersteller: IXYSDescription: IGBT PT 650V 38A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
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Technische Details IXYP15N65C3 IXYS
Description: IGBT PT 650V 38A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A, Supplier Device Package: TO-220-3, IGBT Type: PT, Td (on/off) @ 25°C: 15ns/68ns, Switching Energy: 270µJ (on), 230µJ (off), Test Condition: 400V, 15A, 20Ohm, 15V, Gate Charge: 19 nC, Part Status: Active, Current - Collector (Ic) (Max): 38 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 200 W.
Weitere Produktangebote IXYP15N65C3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXYP15N65C3 | Hersteller : IXYS |
IGBTs TO220 650V 15A GENX3 |
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IXYP15N65C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 200W Case: TO220-3 Mounting: THT Gate charge: 19nC Kind of package: tube Collector current: 15A Gate-emitter voltage: ±20V Pulsed collector current: 80A Turn-on time: 36ns Collector-emitter voltage: 650V Turn-off time: 122ns |
Produkt ist nicht verfügbar |