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CLA100PD1200NA CLA100PD1200NA IXYS Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 100A
Case: SOT227B
Max. forward voltage: 1.21V
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Max. forward impulse current: 1.5kA
Kind of package: bulk
Gate current: 40/80mA
Threshold on-voltage: 0.83V
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CLA110MB1200NA CLA110MB1200NA IXYS CLA110MB1200NA.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT227B
Max. forward voltage: 1.04V
Max. forward impulse current: 935A
Gate current: 40/80mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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MMO62-12IO6 MMO62-12IO6 IXYS MMo62-12io6-DTE.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 30A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 0.4kA
Gate current: 100mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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IXGN200N60B3 IXGN200N60B3 IXYS ixgn200n60b3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Electrical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 200A
Max. off-state voltage: 0.6kV
Power dissipation: 830W
Pulsed collector current: 1.2kA
Mechanical mounting: screw
Technology: GenX3™; PT
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DSEI2X61-02A DSEI2X61-02A IXYS DSEI2x61-02A.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 71A x2
Case: SOT227B
Max. forward voltage: 0.88V
Electrical mounting: screw
Max. load current: 142A
Mechanical mounting: screw
Max. forward impulse current: 0.95kA
Kind of package: tube
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DSEP2X91-03A DSEP2X91-03A IXYS DSEP2X91-03A-DTE.pdf description Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 90A x2
Case: SOT227B
Max. forward voltage: 1.54V
Electrical mounting: screw
Max. load current: 180A
Mechanical mounting: screw
Technology: HiPerFRED™
Max. forward impulse current: 1kA
Kind of package: tube
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DSEP2X61-03A DSEP2X61-03A IXYS DSEP2x61-03A.pdf description Category: Diode modules
Description: Module: diode; double independent; 300V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.11V
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Technology: HiPerFRED™
Max. forward impulse current: 0.6kA
Kind of package: tube
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IXFB210N20P IXFB210N20P IXYS IXFB210N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 10.5mΩ
Drain current: 210A
Power dissipation: 1.5kW
Drain-source voltage: 200V
Kind of package: tube
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IXFB210N30P3 IXFB210N30P3 IXYS IXFB210N30P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 268nC
Reverse recovery time: 250ns
On-state resistance: 14.5mΩ
Drain current: 210A
Gate-source voltage: ±20V
Power dissipation: 1890W
Drain-source voltage: 300V
Kind of package: tube
Produkt ist nicht verfügbar
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DSEC120-12AK DSEC120-12AK IXYS Littelfuse-Power-Semiconductors-DSEC120-12AK-Datasheet?assetguid=6d7c4a83-944f-41eb-8b81-8f646ced8d79 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Mounting: THT
Case: TO264
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 2.66V
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.2kV
Load current: 60A x2
Power dissipation: 330W
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IXFH26N50P3 IXFH26N50P3 IXYS IXFH26N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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PS2601 PS2601 IXYS PS2601.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
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IXTP80N075L2 IXTP80N075L2 IXYS IXTA(H,P)80N075L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
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IXTA80N075L2 IXTA80N075L2 IXYS IXTA(H,P)80N075L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
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IXTH80N075L2 IXTH80N075L2 IXYS IXTA(H,P)80N075L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
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CLA80MT1200NHB CLA80MT1200NHB IXYS CLA80MT1200NHB.pdf Category: Triacs
Description: Triac; 1.2kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 440A
Type of thyristor: triac
Kind of package: tube
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
Case: TO247-3
Mounting: THT
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CLA60MT1200NHB CLA60MT1200NHB IXYS CLA60MT1200NHB.pdf Category: Triacs
Description: Triac; 1.2kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 325A
Type of thyristor: triac
Kind of package: tube
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
Case: TO247-3
Mounting: THT
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CLA60MT1200NHR CLA60MT1200NHR IXYS CLA60MT1200NHR.pdf Category: Triacs
Description: Triac; 1.2kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 325A
Type of thyristor: triac
Kind of package: tube
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
Case: ISO247™
Mounting: THT
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IXFH230N10T IXFH230N10T IXYS IXFH230N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: thrench gate power mosfet
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IXFH320N10T2 IXFH320N10T2 IXYS IXFH(T)320N10T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Mounting: THT
Case: TO247-3
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Reverse recovery time: 98ns
Gate charge: 430nC
On-state resistance: 3.5mΩ
Power dissipation: 1kW
Drain-source voltage: 100V
Drain current: 320A
Kind of channel: enhancement
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DSA50C100HB DSA50C100HB IXYS DSA50C100HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.72V
Power dissipation: 160W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward voltage: 0.72V
Load current: 25A x2
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DSSK50-01A DSSK50-01A IXYS DSSK50-01A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.65V
Power dissipation: 135W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward voltage: 0.65V
Load current: 25A x2
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DSA30C100HB DSA30C100HB IXYS DSA30C100HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO247-3; Ufmax: 0.72V
Power dissipation: 85W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.1kV
Max. forward impulse current: 340A
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward voltage: 0.72V
Load current: 15A x2
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MCB40P1200LB-TRR IXYS MCB40P1200LB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: double series
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MCB40P1200LB-TUB IXYS MCB40P1200LB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
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DSEP8-12A DSEP8-12A IXYS DSEP8-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 40A; TO220AC; 60W; 40ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: TO220AC
Max. forward voltage: 1.96V
Power dissipation: 60W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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IX4426MTR IX4426MTR IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
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IX4426NTR IX4426NTR IXYS littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
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IX4426NE IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Case: SOIC8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: non-inverting
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 1.5A
Pulse fall time: 8ns
Impulse rise time: 10ns
Number of channels: 2
Supply voltage: 4.5...30V
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IX4426NETR IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Case: SOIC8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: non-inverting
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 1.5A
Pulse fall time: 8ns
Impulse rise time: 10ns
Number of channels: 2
Supply voltage: 4.5...30V
Produkt ist nicht verfügbar
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DSEP2X60-12A DSEP2X60-12A IXYS media?resourcetype=datasheets&itemid=c205d7ca-54ab-4175-bdd7-497f43ba7754&filename=Littelfuse-Power-Semiconductors-DSEP2x60-12A-Datasheet Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 60A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.52V
Max. forward impulse current: 0.8kA
Kind of package: tube
Electrical mounting: screw
Type of semiconductor module: diode
Mechanical mounting: screw
Max. load current: 120A
auf Bestellung 10 Stücke:
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2+53.17 EUR
3+50.42 EUR
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IXBN42N170A IXBN42N170A IXYS IXBN42N170A.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 21A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Power dissipation: 313W
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
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DSEI2X30-10B DSEI2X30-10B IXYS DSEI2x30-10B_DSEI2x31-10B.pdf Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Max. forward voltage: 2V
Load current: 30A x2
Max. load current: 60A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Type of semiconductor module: diode
Semiconductor structure: double independent
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3+26.03 EUR
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IXTA1N170DHV IXTA1N170DHV IXYS IXTA(H)1N170DHV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Case: TO263HV
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 30ns
Drain current: 1A
On-state resistance: 16Ω
Power dissipation: 290W
Drain-source voltage: 1.7kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXTH1N170DHV IXTH1N170DHV IXYS IXTA(H)1N170DHV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Case: TO247HV
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 30ns
Drain current: 1A
On-state resistance: 16Ω
Power dissipation: 290W
Drain-source voltage: 1.7kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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MMIX1G320N60B3 IXYS MMIX1G320N60B3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Technology: BiMOSFET™; GenX3™; PT
Mounting: SMD
Case: SMPD
Kind of package: tube
Turn-on time: 107ns
Gate charge: 585nC
Turn-off time: 595ns
Gate-emitter voltage: ±20V
Collector current: 180A
Collector-emitter voltage: 600V
Pulsed collector current: 1kA
Power dissipation: 1kW
Type of transistor: IGBT
Produkt ist nicht verfügbar
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OMA160 OMA160 IXYS OMA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Switched voltage: max. 250V AC; max. 250V DC
On-state resistance: 100Ω
Relay variant: 1-phase; current source
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CPC1560G CPC1560G IXYS CPC1560.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Turn-off time: 400µs
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CPC1560GS CPC1560GS IXYS CPC1560.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Turn-off time: 400µs
Produkt ist nicht verfügbar
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CPC1560GSTR IXYS CPC1560.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Turn-off time: 400µs
Produkt ist nicht verfügbar
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DSEP30-06B DSEP30-06B IXYS media?resourcetype=datasheets&itemid=9922dd98-2752-4f64-b2f8-12debebce6e5&filename=littelfuse-power-semiconductors-dsep30-06b-datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-2
Max. forward voltage: 2.51V
Power dissipation: 165W
Reverse recovery time: 25ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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DSEP30-06A DSEP30-06A IXYS DSEP30-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-2
Max. forward voltage: 1.25V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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DSEP30-06BR DSEP30-06BR IXYS DSEP30-06BR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: ISOPLUS247™
Max. forward voltage: 1.61V
Power dissipation: 135W
Reverse recovery time: 25ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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IXYH40N90C3D1 IXYH40N90C3D1 IXYS IXYH40N90C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
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IXYH40N90C3 IXYH40N90C3 IXYS IXYH40N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
Produkt ist nicht verfügbar
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IXYX140N90C3 IXYX140N90C3 IXYS IXYK(X)140N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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LCC110 LCC110 IXYS LCC110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 4ms
Operating temperature: -40...85°C
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LCC110S LCC110S IXYS lcc110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 4ms
Operating temperature: -40...85°C
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LCC110P LCC110P IXYS LCC110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 4ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCC110PTR IXYS LCC110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 4ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCC110STR IXYS LCC110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 4ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCC120 LCC120 IXYS LCC120.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCC120S LCC120S IXYS LCC120.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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LCC120STR IXYS LCC120.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LAA110 LAA110 IXYS LAA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LAA110PL LAA110PL IXYS LAA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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17+4.46 EUR
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LAA110L LAA110L IXYS LAA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LAA110LS LAA110LS IXYS LAA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LAA110P IXYS LAA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LAA110LSTR IXYS LAA100L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CLA100PD1200NA Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969
CLA100PD1200NA
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 100A
Case: SOT227B
Max. forward voltage: 1.21V
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Max. forward impulse current: 1.5kA
Kind of package: bulk
Gate current: 40/80mA
Threshold on-voltage: 0.83V
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CLA110MB1200NA CLA110MB1200NA.pdf
CLA110MB1200NA
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT227B
Max. forward voltage: 1.04V
Max. forward impulse current: 935A
Gate current: 40/80mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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MMO62-12IO6 MMo62-12io6-DTE.pdf
MMO62-12IO6
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 30A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 0.4kA
Gate current: 100mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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3+30.97 EUR
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IXGN200N60B3 ixgn200n60b3.pdf
IXGN200N60B3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Electrical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 200A
Max. off-state voltage: 0.6kV
Power dissipation: 830W
Pulsed collector current: 1.2kA
Mechanical mounting: screw
Technology: GenX3™; PT
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2+56.54 EUR
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DSEI2X61-02A DSEI2x61-02A.pdf
DSEI2X61-02A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 71A x2
Case: SOT227B
Max. forward voltage: 0.88V
Electrical mounting: screw
Max. load current: 142A
Mechanical mounting: screw
Max. forward impulse current: 0.95kA
Kind of package: tube
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.22 EUR
10+29.6 EUR
Mindestbestellmenge: 3
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DSEP2X91-03A description DSEP2X91-03A-DTE.pdf
DSEP2X91-03A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 90A x2
Case: SOT227B
Max. forward voltage: 1.54V
Electrical mounting: screw
Max. load current: 180A
Mechanical mounting: screw
Technology: HiPerFRED™
Max. forward impulse current: 1kA
Kind of package: tube
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+41.54 EUR
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DSEP2X61-03A description DSEP2x61-03A.pdf
DSEP2X61-03A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.11V
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Technology: HiPerFRED™
Max. forward impulse current: 0.6kA
Kind of package: tube
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+33.79 EUR
Mindestbestellmenge: 3
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IXFB210N20P IXFB210N20P.pdf
IXFB210N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 10.5mΩ
Drain current: 210A
Power dissipation: 1.5kW
Drain-source voltage: 200V
Kind of package: tube
Produkt ist nicht verfügbar
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IXFB210N30P3 IXFB210N30P3.pdf
IXFB210N30P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 268nC
Reverse recovery time: 250ns
On-state resistance: 14.5mΩ
Drain current: 210A
Gate-source voltage: ±20V
Power dissipation: 1890W
Drain-source voltage: 300V
Kind of package: tube
Produkt ist nicht verfügbar
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DSEC120-12AK Littelfuse-Power-Semiconductors-DSEC120-12AK-Datasheet?assetguid=6d7c4a83-944f-41eb-8b81-8f646ced8d79
DSEC120-12AK
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Mounting: THT
Case: TO264
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 2.66V
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.2kV
Load current: 60A x2
Power dissipation: 330W
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.46 EUR
10+15.44 EUR
Mindestbestellmenge: 5
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IXFH26N50P3 IXFH26N50P3.pdf
IXFH26N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
auf Bestellung 305 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.08 EUR
10+7.51 EUR
11+6.68 EUR
30+6.31 EUR
Mindestbestellmenge: 8
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PS2601 PS2601.pdf
PS2601
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXTP80N075L2 IXTA(H,P)80N075L2.pdf
IXTP80N075L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.11 EUR
11+6.88 EUR
12+6.19 EUR
50+6.09 EUR
Mindestbestellmenge: 9
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IXTA80N075L2 IXTA(H,P)80N075L2.pdf
IXTA80N075L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.84 EUR
10+13.08 EUR
25+11.47 EUR
Mindestbestellmenge: 5
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IXTH80N075L2 IXTA(H,P)80N075L2.pdf
IXTH80N075L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
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CLA80MT1200NHB CLA80MT1200NHB.pdf
CLA80MT1200NHB
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 440A
Type of thyristor: triac
Kind of package: tube
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
Case: TO247-3
Mounting: THT
auf Bestellung 273 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.4 EUR
10+8.24 EUR
Mindestbestellmenge: 8
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CLA60MT1200NHB CLA60MT1200NHB.pdf
CLA60MT1200NHB
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 325A
Type of thyristor: triac
Kind of package: tube
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
Case: TO247-3
Mounting: THT
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.45 EUR
10+7.81 EUR
Mindestbestellmenge: 8
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CLA60MT1200NHR CLA60MT1200NHR.pdf
CLA60MT1200NHR
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 325A
Type of thyristor: triac
Kind of package: tube
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
Case: ISO247™
Mounting: THT
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.26 EUR
10+11.01 EUR
30+10.6 EUR
Mindestbestellmenge: 6
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IXFH230N10T IXFH230N10T.pdf
IXFH230N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.51 EUR
10+8.69 EUR
30+7.08 EUR
120+7.01 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFH320N10T2 IXFH(T)320N10T2.pdf
IXFH320N10T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Mounting: THT
Case: TO247-3
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Reverse recovery time: 98ns
Gate charge: 430nC
On-state resistance: 3.5mΩ
Power dissipation: 1kW
Drain-source voltage: 100V
Drain current: 320A
Kind of channel: enhancement
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.37 EUR
Mindestbestellmenge: 5
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DSA50C100HB DSA50C100HB.pdf
DSA50C100HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.72V
Power dissipation: 160W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward voltage: 0.72V
Load current: 25A x2
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.52 EUR
18+4.08 EUR
20+3.6 EUR
30+3.29 EUR
Mindestbestellmenge: 16
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DSSK50-01A DSSK50-01A.pdf
DSSK50-01A
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.65V
Power dissipation: 135W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward voltage: 0.65V
Load current: 25A x2
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
Mindestbestellmenge: 11
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DSA30C100HB DSA30C100HB.pdf
DSA30C100HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO247-3; Ufmax: 0.72V
Power dissipation: 85W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.1kV
Max. forward impulse current: 340A
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward voltage: 0.72V
Load current: 15A x2
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.39 EUR
24+3.07 EUR
27+2.72 EUR
30+2.47 EUR
Mindestbestellmenge: 22
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MCB40P1200LB-TRR MCB40P1200LB.pdf
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCB40P1200LB-TUB MCB40P1200LB.pdf
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
Produkt ist nicht verfügbar
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DSEP8-12A DSEP8-12A.pdf
DSEP8-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 40A; TO220AC; 60W; 40ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: TO220AC
Max. forward voltage: 1.96V
Power dissipation: 60W
Reverse recovery time: 40ns
Technology: HiPerFRED™
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.06 EUR
33+2.23 EUR
50+1.57 EUR
100+1.53 EUR
Mindestbestellmenge: 24
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IX4426MTR IX4426-27-28.pdf
IX4426MTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
85+0.85 EUR
90+0.8 EUR
Mindestbestellmenge: 61
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IX4426NTR littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250
IX4426NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Produkt ist nicht verfügbar
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IX4426NE
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Case: SOIC8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: non-inverting
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 1.5A
Pulse fall time: 8ns
Impulse rise time: 10ns
Number of channels: 2
Supply voltage: 4.5...30V
Produkt ist nicht verfügbar
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IX4426NETR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Case: SOIC8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: non-inverting
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 1.5A
Pulse fall time: 8ns
Impulse rise time: 10ns
Number of channels: 2
Supply voltage: 4.5...30V
Produkt ist nicht verfügbar
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DSEP2X60-12A media?resourcetype=datasheets&itemid=c205d7ca-54ab-4175-bdd7-497f43ba7754&filename=Littelfuse-Power-Semiconductors-DSEP2x60-12A-Datasheet
DSEP2X60-12A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 60A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.52V
Max. forward impulse current: 0.8kA
Kind of package: tube
Electrical mounting: screw
Type of semiconductor module: diode
Mechanical mounting: screw
Max. load current: 120A
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+53.17 EUR
3+50.42 EUR
Mindestbestellmenge: 2
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IXBN42N170A IXBN42N170A.pdf
IXBN42N170A
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 21A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Power dissipation: 313W
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+48.39 EUR
3+43.5 EUR
Mindestbestellmenge: 2
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DSEI2X30-10B DSEI2x30-10B_DSEI2x31-10B.pdf
DSEI2X30-10B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Max. forward voltage: 2V
Load current: 30A x2
Max. load current: 60A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Type of semiconductor module: diode
Semiconductor structure: double independent
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+26.03 EUR
Mindestbestellmenge: 3
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IXTA1N170DHV IXTA(H)1N170DHV.pdf
IXTA1N170DHV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Case: TO263HV
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 30ns
Drain current: 1A
On-state resistance: 16Ω
Power dissipation: 290W
Drain-source voltage: 1.7kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXTH1N170DHV IXTA(H)1N170DHV.pdf
IXTH1N170DHV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Case: TO247HV
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 30ns
Drain current: 1A
On-state resistance: 16Ω
Power dissipation: 290W
Drain-source voltage: 1.7kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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MMIX1G320N60B3 MMIX1G320N60B3.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Technology: BiMOSFET™; GenX3™; PT
Mounting: SMD
Case: SMPD
Kind of package: tube
Turn-on time: 107ns
Gate charge: 585nC
Turn-off time: 595ns
Gate-emitter voltage: ±20V
Collector current: 180A
Collector-emitter voltage: 600V
Pulsed collector current: 1kA
Power dissipation: 1kW
Type of transistor: IGBT
Produkt ist nicht verfügbar
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OMA160 OMA160.pdf
OMA160
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Switched voltage: max. 250V AC; max. 250V DC
On-state resistance: 100Ω
Relay variant: 1-phase; current source
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.19 EUR
17+4.25 EUR
25+3.69 EUR
Mindestbestellmenge: 14
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CPC1560G CPC1560.pdf
CPC1560G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Turn-off time: 400µs
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.21 EUR
16+4.58 EUR
Mindestbestellmenge: 14
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CPC1560GS CPC1560.pdf
CPC1560GS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Turn-off time: 400µs
Produkt ist nicht verfügbar
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CPC1560GSTR CPC1560.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Turn-off time: 400µs
Produkt ist nicht verfügbar
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DSEP30-06B media?resourcetype=datasheets&itemid=9922dd98-2752-4f64-b2f8-12debebce6e5&filename=littelfuse-power-semiconductors-dsep30-06b-datasheet
DSEP30-06B
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-2
Max. forward voltage: 2.51V
Power dissipation: 165W
Reverse recovery time: 25ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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DSEP30-06A DSEP30-06A.pdf
DSEP30-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-2
Max. forward voltage: 1.25V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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DSEP30-06BR DSEP30-06BR.pdf
DSEP30-06BR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: ISOPLUS247™
Max. forward voltage: 1.61V
Power dissipation: 135W
Reverse recovery time: 25ns
Technology: HiPerFRED™
Produkt ist nicht verfügbar
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IXYH40N90C3D1 IXYH40N90C3D1.pdf
IXYH40N90C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
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IXYH40N90C3 IXYH40N90C3.pdf
IXYH40N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
Produkt ist nicht verfügbar
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IXYX140N90C3 IXYK(X)140N90C3.pdf
IXYX140N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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LCC110 LCC110.pdf
LCC110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 4ms
Operating temperature: -40...85°C
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.82 EUR
50+3.93 EUR
Mindestbestellmenge: 15
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LCC110S lcc110.pdf
LCC110S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 4ms
Operating temperature: -40...85°C
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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LCC110P LCC110.pdf
LCC110P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 4ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCC110PTR LCC110.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 4ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCC110STR LCC110.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 4ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCC120 LCC120.pdf
LCC120
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LCC120S LCC120.pdf
LCC120S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
auf Bestellung 637 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.02 EUR
14+5.38 EUR
25+5.13 EUR
50+5.05 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
LCC120STR LCC120.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LAA110 LAA110.pdf
LAA110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.85 EUR
16+4.49 EUR
18+4 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
LAA110PL LAA110L.pdf
LAA110PL
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.06 EUR
17+4.46 EUR
100+4.1 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
LAA110L LAA110L.pdf
LAA110L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LAA110LS LAA110L.pdf
LAA110LS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LAA110P LAA100.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LAA110LSTR LAA100L.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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