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MCB40P1200LB-TUB

MCB40P1200LB-TUB IXYS

media-3320625.pdf Hersteller: IXYS
Discrete Semiconductor Modules SiC MOSFET phaseleg 25mO SMPD-B
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+357.68 EUR
10+ 335 EUR
20+ 324.23 EUR
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Technische Details MCB40P1200LB-TUB IXYS

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B, Technology: SiC, Case: SMPD-B, Mounting: SMD, On-state resistance: 34mΩ, Kind of package: tube, Gate charge: 161nC, Kind of channel: enhanced, Gate-source voltage: -5...20V, Drain-source voltage: 1.2kV, Drain current: 55A, Type of transistor: N-MOSFET, Semiconductor structure: double series, Polarisation: unipolar, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote MCB40P1200LB-TUB nach Preis ab 382.96 EUR bis 399.85 EUR

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Preis ohne MwSt
MCB40P1200LB-TUB Hersteller : IXYS media?resourcetype=datasheets&itemid=342f592b-5d45-4a74-859b-9516f656d799&filename=littelfuse-power-semiconductors-mcb40p1200lb-datasheet Description: POWER MOSFET
Packaging: Tube
Package / Case: 9-SMD Power Module
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 58A
Supplier Device Package: SMPD
Part Status: Active
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+399.85 EUR
10+ 382.96 EUR
MCB40P1200LB-TUB Hersteller : IXYS MCB40P1200LB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Technology: SiC
Case: SMPD-B
Mounting: SMD
On-state resistance: 34mΩ
Kind of package: tube
Gate charge: 161nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Drain-source voltage: 1.2kV
Drain current: 55A
Type of transistor: N-MOSFET
Semiconductor structure: double series
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MCB40P1200LB-TUB Hersteller : IXYS MCB40P1200LB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Technology: SiC
Case: SMPD-B
Mounting: SMD
On-state resistance: 34mΩ
Kind of package: tube
Gate charge: 161nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Drain-source voltage: 1.2kV
Drain current: 55A
Type of transistor: N-MOSFET
Semiconductor structure: double series
Polarisation: unipolar
Produkt ist nicht verfügbar