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Technische Details MCB40P1200LB-TUB IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 55A, Case: SMPD-B, Gate-source voltage: -5...20V, On-state resistance: 34mΩ, Mounting: SMD, Gate charge: 161nC, Kind of package: tube, Kind of channel: enhancement, Semiconductor structure: double series.
Weitere Produktangebote MCB40P1200LB-TUB nach Preis ab 382.96 EUR bis 399.85 EUR
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| MCB40P1200LB-TUB | Hersteller : IXYS |
 Description: POWER MOSFETPackaging: Tube Package / Case: 9-SMD Power Module Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Source Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 58A Supplier Device Package: SMPD Part Status: Active |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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| MCB40P1200LB-TUB | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 55A Case: SMPD-B Gate-source voltage: -5...20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 161nC Kind of package: tube Kind of channel: enhancement Semiconductor structure: double series |
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