Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXFT50N85XHV | IXYS | IXFT50N85XHV SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXFT52N50P2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 52A Power dissipation: 960W Case: TO268 On-state resistance: 0.12Ω Mounting: SMD Gate charge: 113nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFT60N50P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 60A Power dissipation: 1.04kW Case: TO268 On-state resistance: 0.11Ω Mounting: SMD Gate charge: 96nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
IXFT60N60X3HV | IXYS |
![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Pulsed drain current: 90A Power dissipation: 625W Case: TO268HV Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: SMD Gate charge: 51nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 175ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXFT60N65X2HV | IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Power dissipation: 780W Case: TO268 Gate-source voltage: ±30V On-state resistance: 52mΩ Mounting: SMD Gate charge: 108nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; X2-Class Reverse recovery time: 180ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFT69N30P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 69A; 500W; TO268; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 69A Power dissipation: 500W Case: TO268 On-state resistance: 49mΩ Mounting: SMD Gate charge: 156nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 100ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFT70N20Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268 Mounting: SMD Case: TO268 Drain-source voltage: 200V Drain current: 70A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Kind of package: tube Gate charge: 67nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFT70N30Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 70A Power dissipation: 830W Case: TO268 On-state resistance: 54mΩ Mounting: SMD Gate charge: 98nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
IXFT80N65X2HV | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
IXFT86N30T | IXYS | IXFT86N30T SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
IXFT88N30P | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXFT94N30P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 94A Power dissipation: 1.04kW Case: TO268 On-state resistance: 36mΩ Mounting: SMD Gate charge: 102nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
IXFT94N30T | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXFT96N20P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 96A Power dissipation: 600W Case: TO268 On-state resistance: 24mΩ Mounting: SMD Gate charge: 145nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX100N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 100A Power dissipation: 1.04kW Case: PLUS247™ On-state resistance: 30mΩ Mounting: THT Gate charge: 183nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 200ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX120N25P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 700W Case: PLUS247™ On-state resistance: 24mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX120N30P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 120A Power dissipation: 1.13kW Case: PLUS247™ On-state resistance: 27mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX120N30T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 120A Power dissipation: 960W Case: PLUS247™ On-state resistance: 24mΩ Mounting: THT Gate charge: 265nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX120N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 220ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 120A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 24mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 220ns Features of semiconductor devices: ultra junction x-class Gate charge: 240nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX140N25T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 140A Power dissipation: 960W Case: PLUS247™ On-state resistance: 17mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX140N30P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™ Mounting: THT Polarisation: unipolar Power dissipation: 1.04kW Type of transistor: N-MOSFET On-state resistance: 24mΩ Drain current: 140A Drain-source voltage: 300V Gate charge: 185nC Case: PLUS247™ Kind of channel: enhancement Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX150N30P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 150A Power dissipation: 1.3kW Case: PLUS247™ On-state resistance: 19mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX160N30T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 160A; 1390W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 160A Power dissipation: 1390W Case: PLUS247™ On-state resistance: 19mΩ Mounting: THT Gate charge: 376nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX170N20P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1250W; PLUS247™ Mounting: THT Case: PLUS247™ Drain-source voltage: 200V Drain current: 170A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Gate charge: 185nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX170N20T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; PLUS247™ Mounting: THT Case: PLUS247™ Drain-source voltage: 200V Drain current: 170A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 1.15kW Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 265nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX180N15P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 180A Power dissipation: 830W Case: PLUS247™ On-state resistance: 11mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFX180N25T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 180A Power dissipation: 1390W Case: PLUS247™ On-state resistance: 12.9mΩ Mounting: THT Gate charge: 364nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX200N10P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Power dissipation: 830W Case: PLUS247™ On-state resistance: 7.5mΩ Mounting: THT Gate charge: 235nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX20N120P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Power dissipation: 780W Case: PLUS247™ On-state resistance: 570mΩ Mounting: THT Gate charge: 193nC Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±30V Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFX210N30X3 | IXYS |
![]() ![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 210A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 5.5mΩ Mounting: THT Gate charge: 375nC Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±20V Reverse recovery time: 190ns Technology: HiPerFET™; X3-Class Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX220N17T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 170V Drain current: 220A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 6.3mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFX230N20T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 230A Power dissipation: 1670W Case: PLUS247™ On-state resistance: 7.5mΩ Mounting: THT Gate charge: 358nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
auf Bestellung 118 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFX240N15T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 240A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 5.2mΩ Mounting: THT Gate charge: 460nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX240N25X3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; PLUS247™; 177ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 240A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 5mΩ Mounting: THT Gate charge: 345nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 177ns Features of semiconductor devices: ultra junction x-class Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
IXFX24N100Q3 | IXYS | IXFX24N100Q3 THT N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXFX250N10P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 250A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 6.5mΩ Mounting: THT Gate charge: 205nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX26N100P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 26A Power dissipation: 780W Case: PLUS247™ On-state resistance: 390mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX26N120P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 26A; 960W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 26A Power dissipation: 960W Case: PLUS247™ On-state resistance: 0.5Ω Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX27N80Q | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 27A Power dissipation: 481W Case: PLUS247™ On-state resistance: 0.32Ω Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 108 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFX300N20X3 | IXYS |
![]() ![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 300A Power dissipation: 1.25kW Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 375nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 170ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 21 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFX320N17T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 170V Drain current: 320A Power dissipation: 1670W Case: PLUS247™ On-state resistance: 5.2mΩ Mounting: THT Gate charge: 640nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX32N100P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 32A Power dissipation: 960W Case: PLUS247™ On-state resistance: 0.32Ω Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX32N100Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 32A Power dissipation: 1.25kW Case: PLUS247™ Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX32N80P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 32A Power dissipation: 830W Case: PLUS247™ On-state resistance: 0.27Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
IXFX32N80Q3 | IXYS | IXFX32N80Q3 THT N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXFX32N90P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™ Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Kind of package: tube Gate charge: 215nC Kind of channel: enhancement Mounting: THT Case: PLUS247™ Drain-source voltage: 900V Drain current: 32A On-state resistance: 0.3Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX34N80 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Power dissipation: 568W Case: PLUS247™ On-state resistance: 0.24Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX360N10T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 360A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 2.9mΩ Mounting: THT Gate charge: 525nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFX360N15T2 | IXYS | IXFX360N15T2 THT N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
IXFX400N15X3 | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXFX40N90P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 40A; 960W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 40A Power dissipation: 960W Case: PLUS247™ On-state resistance: 0.23Ω Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX420N10T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 420A Power dissipation: 1670W Case: PLUS247™ On-state resistance: 2.6mΩ Mounting: THT Gate charge: 670nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
IXFX44N60 | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXFX44N80P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 44A Power dissipation: 1.04kW Case: PLUS247™ On-state resistance: 0.19Ω Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX44N80Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 44A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 0.19Ω Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX48N60P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 48A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Power dissipation: 830W Case: PLUS247™ On-state resistance: 135mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns Technology: HiPerFET™; PolarHV™ Gate-source voltage: ±30V Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
IXFX48N60Q3 | IXYS | IXFX48N60Q3 THT N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXFX520N075T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 520A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 2.2mΩ Mounting: THT Gate charge: 545nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX55N50 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 55A; 520W; PLUS247™; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 55A Power dissipation: 520W Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Gate charge: 330nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFX64N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 830W Case: PLUS247™ On-state resistance: 85mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IXFT50N85XHV |
Hersteller: IXYS
IXFT50N85XHV SMD N channel transistors
IXFT50N85XHV SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFT52N50P2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 52A
Power dissipation: 960W
Case: TO268
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 52A
Power dissipation: 960W
Case: TO268
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFT60N50P3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFT60N60X3HV |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 175ns
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 175ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFT60N65X2HV |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Reverse recovery time: 180ns
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Reverse recovery time: 180ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.89 EUR |
7+ | 11.14 EUR |
IXFT69N30P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 69A; 500W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 69A
Power dissipation: 500W
Case: TO268
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 69A; 500W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 69A
Power dissipation: 500W
Case: TO268
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFT70N20Q3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268
Mounting: SMD
Case: TO268
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268
Mounting: SMD
Case: TO268
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFT70N30Q3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Power dissipation: 830W
Case: TO268
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Power dissipation: 830W
Case: TO268
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFT80N65X2HV |
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Hersteller: IXYS
IXFT80N65X2HV SMD N channel transistors
IXFT80N65X2HV SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFT86N30T |
Hersteller: IXYS
IXFT86N30T SMD N channel transistors
IXFT86N30T SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFT88N30P |
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Hersteller: IXYS
IXFT88N30P SMD N channel transistors
IXFT88N30P SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFT94N30P3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 94A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 94A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFT94N30T |
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Hersteller: IXYS
IXFT94N30T SMD N channel transistors
IXFT94N30T SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFT96N20P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Power dissipation: 600W
Case: TO268
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Power dissipation: 600W
Case: TO268
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX100N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX120N25P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX120N30P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX120N30T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX120N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 220ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 220ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 240nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 220ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 220ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 240nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX140N25T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 140A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 140A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX140N30P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™
Mounting: THT
Polarisation: unipolar
Power dissipation: 1.04kW
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Drain current: 140A
Drain-source voltage: 300V
Gate charge: 185nC
Case: PLUS247™
Kind of channel: enhancement
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™
Mounting: THT
Polarisation: unipolar
Power dissipation: 1.04kW
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Drain current: 140A
Drain-source voltage: 300V
Gate charge: 185nC
Case: PLUS247™
Kind of channel: enhancement
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX150N30P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX160N30T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160A; 1390W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: PLUS247™
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160A; 1390W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: PLUS247™
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX170N20P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1250W; PLUS247™
Mounting: THT
Case: PLUS247™
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1250W; PLUS247™
Mounting: THT
Case: PLUS247™
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX170N20T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; PLUS247™
Mounting: THT
Case: PLUS247™
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.15kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; PLUS247™
Mounting: THT
Case: PLUS247™
Drain-source voltage: 200V
Drain current: 170A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.15kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX180N15P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 17.88 EUR |
10+ | 13.91 EUR |
IXFX180N25T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 180A
Power dissipation: 1390W
Case: PLUS247™
On-state resistance: 12.9mΩ
Mounting: THT
Gate charge: 364nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 180A
Power dissipation: 1390W
Case: PLUS247™
On-state resistance: 12.9mΩ
Mounting: THT
Gate charge: 364nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX200N10P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX20N120P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
2+ | 35.75 EUR |
3+ | 25.34 EUR |
30+ | 25.14 EUR |
IXFX210N30X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 190ns
Technology: HiPerFET™; X3-Class
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 190ns
Technology: HiPerFET™; X3-Class
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX220N17T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 16.03 EUR |
6+ | 12.61 EUR |
30+ | 12.13 EUR |
IXFX230N20T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 358nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 358nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
auf Bestellung 118 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 21.25 EUR |
120+ | 20.43 EUR |
IXFX240N15T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX240N25X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; PLUS247™; 177ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 345nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 177ns
Features of semiconductor devices: ultra junction x-class
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; PLUS247™; 177ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 345nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 177ns
Features of semiconductor devices: ultra junction x-class
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX24N100Q3 |
Hersteller: IXYS
IXFX24N100Q3 THT N channel transistors
IXFX24N100Q3 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX250N10P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 250A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 250A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX26N100P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX26N120P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 26A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 26A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 26A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 26A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX27N80Q |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 108 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 24.58 EUR |
4+ | 23.24 EUR |
30+ | 23.09 EUR |
100+ | 22.35 EUR |
IXFX300N20X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 32.23 EUR |
30+ | 31.12 EUR |
IXFX320N17T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 320A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 320A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX32N100P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX32N100Q3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX32N80P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 32A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 32A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX32N80Q3 |
Hersteller: IXYS
IXFX32N80Q3 THT N channel transistors
IXFX32N80Q3 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX32N90P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhancement
Mounting: THT
Case: PLUS247™
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhancement
Mounting: THT
Case: PLUS247™
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX34N80 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IXFX360N10T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 17.39 EUR |
6+ | 12.44 EUR |
7+ | 11.77 EUR |
IXFX360N15T2 |
Hersteller: IXYS
IXFX360N15T2 THT N channel transistors
IXFX360N15T2 THT N channel transistors
Produkt ist nicht verfügbar
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IXFX400N15X3 |
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Hersteller: IXYS
IXFX400N15X3 THT N channel transistors
IXFX400N15X3 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFX40N90P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 40A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 40A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX420N10T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX44N60 |
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Hersteller: IXYS
IXFX44N60 THT N channel transistors
IXFX44N60 THT N channel transistors
Produkt ist nicht verfügbar
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Stück im Wert von UAH
IXFX44N80P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX44N80Q3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX48N60P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 48A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHV™
Gate-source voltage: ±30V
Anzahl je Verpackung: 300 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 48A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHV™
Gate-source voltage: ±30V
Anzahl je Verpackung: 300 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX48N60Q3 |
Hersteller: IXYS
IXFX48N60Q3 THT N channel transistors
IXFX48N60Q3 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX520N075T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFX55N50 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 55A; 520W; PLUS247™; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Power dissipation: 520W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Anzahl je Verpackung: 300 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 55A; 520W; PLUS247™; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Power dissipation: 520W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Anzahl je Verpackung: 300 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
IXFX64N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH