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CPC1786J CPC1786J IXYS CPC1786.pdf Category: DC Solid State Relays
Description: Relay: solid state; 800mA; max.1kVDC; THT; i4-pac; OptoMOS; 2Ω
Mounting: THT
Kind of output: MOSFET
Case: i4-pac
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Turn-on time: 20ms
Control current max.: 100mA
Max. operating current: 0.8A
On-state resistance: 2Ω
Switched voltage: max. 1kV DC
Insulation voltage: 2.5kV
Relay variant: current source
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
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IXyH100N65C3 IXyH100N65C3 IXYS IXYH100N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 62ns
Gate charge: 172nC
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 420A
Collector-emitter voltage: 650V
Power dissipation: 830W
auf Bestellung 275 Stücke:
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5+14.64 EUR
6+13.63 EUR
10+12.58 EUR
30+10.61 EUR
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IXYN100N65C3H1 IXYN100N65C3H1 IXYS IXYN100N65C3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 90A; SOT227B; 600W
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 90A
Type of semiconductor module: IGBT
Pulsed collector current: 420A
Max. off-state voltage: 650V
Mechanical mounting: screw
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IXYN100N65B3D1 IXYN100N65B3D1 IXYS IXYN100N65B3D1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Type of semiconductor module: IGBT
Pulsed collector current: 490A
Max. off-state voltage: 650V
Mechanical mounting: screw
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IXFN100N65X2 IXFN100N65X2 IXYS IXFN100N65X2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 78A; SOT227B; screw; Idm: 200A
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Gate charge: 183nC
Reverse recovery time: 200ns
On-state resistance: 30mΩ
Gate-source voltage: ±40V
Drain current: 78A
Pulsed drain current: 200A
Power dissipation: 595W
Drain-source voltage: 650V
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IXYX100N65B3D1 IXYX100N65B3D1 IXYS IXYK(X)100N65B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 830W
Case: PLUS247™
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 358ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 460A
Collector-emitter voltage: 650V
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IXYH100N65A3 IXYH100N65A3 IXYS IXYH100N65A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 470W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 470W
Case: TO247-3
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Turn-on time: 87ns
Turn-off time: 459ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 650V
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IXFX100N65X2 IXFX100N65X2 IXYS IXFK(X)100N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: PLUS247™
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Polarisation: unipolar
Gate charge: 183nC
Reverse recovery time: 200ns
On-state resistance: 30mΩ
Drain current: 100A
Power dissipation: 1.04kW
Drain-source voltage: 650V
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IXYH100N65C5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYH100N65C5Datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 750W; TO247-3
Type of transistor: IGBT
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 560A
Collector-emitter voltage: 650V
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IXYN100N65A3 IXYN100N65A3 IXYS IXYN100N65A3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Type of semiconductor module: IGBT
Pulsed collector current: 460A
Max. off-state voltage: 650V
Mechanical mounting: screw
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IXYR100N65A3V1 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; ISOPLUS247™
Type of transistor: IGBT
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Collector current: 100A
Collector-emitter voltage: 650V
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IXTP32P20T IXTP32P20T IXYS IXT_32P20T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Reverse recovery time: 190ns
Gate charge: 185nC
On-state resistance: 0.13Ω
Gate-source voltage: ±15V
Power dissipation: 300W
auf Bestellung 250 Stücke:
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8+9.88 EUR
9+8.07 EUR
10+7.16 EUR
50+7.02 EUR
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IXTP32P05T IXTP32P05T IXYS IXT_32P05T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Reverse recovery time: 26ns
Gate charge: 46nC
On-state resistance: 39mΩ
Gate-source voltage: ±15V
Power dissipation: 83W
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IXKK85N60C IXKK85N60C IXYS IXKK85N60C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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CPC1130N CPC1130N IXYS CPC1130N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC3730CTR CPC3730CTR IXYS CPC3730.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
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IXFH88N30P IXFH88N30P IXYS IXFH(K,T)88N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 40mΩ
Drain current: 88A
Drain-source voltage: 300V
Power dissipation: 600W
Kind of channel: enhancement
auf Bestellung 292 Stücke:
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6+12.53 EUR
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IXFH70N30Q3 IXFH70N30Q3 IXYS IXFH(T)70N30Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 54mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
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5+15.27 EUR
10+13.38 EUR
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IXFQ94N30P3 IXFQ94N30P3 IXYS IXFH(Q,T)94N30P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 94A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 102nC
auf Bestellung 300 Stücke:
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6+13.31 EUR
7+11.17 EUR
10+9.98 EUR
30+9.61 EUR
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IXFK150N30P3 IXFK150N30P3 IXYS IXFK(X)150N30P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Case: TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 197nC
On-state resistance: 19mΩ
Drain current: 150A
Drain-source voltage: 300V
Mounting: THT
Power dissipation: 1.3kW
Kind of package: tube
auf Bestellung 100 Stücke:
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10+19.56 EUR
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IXFK88N30P IXFK88N30P IXYS IXFH(K,T)88N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 40mΩ
Drain current: 88A
Drain-source voltage: 300V
Power dissipation: 600W
Kind of channel: enhancement
auf Bestellung 1 Stücke:
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IXFL210N30P3 IXFL210N30P3 IXYS IXFL210N30P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 268nC
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IXTT88N30P IXTT88N30P IXYS IXTH88N30P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
Reverse recovery time: 250ns
auf Bestellung 27 Stücke:
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5+15.1 EUR
6+12.96 EUR
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IXTA36N30P IXTA36N30P IXYS IXTA36N30P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Reverse recovery time: 250ns
auf Bestellung 239 Stücke:
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14+5.45 EUR
20+3.65 EUR
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IXFH50N30Q3 IXFH50N30Q3 IXYS IXFH50N30Q3_IXFT50N30Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 50A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 65nC
Reverse recovery time: 250ns
auf Bestellung 8 Stücke:
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6+13.2 EUR
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IXTQ88N30P IXTQ88N30P IXYS IXTH88N30P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
Reverse recovery time: 250ns
auf Bestellung 264 Stücke:
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7+11.81 EUR
10+10.48 EUR
30+9.81 EUR
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IXFH56N30X3 IXFH56N30X3 IXYS IXF_56N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 56A
Power dissipation: 320W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 56nC
Reverse recovery time: 115ns
auf Bestellung 129 Stücke:
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7+11.55 EUR
10+8.25 EUR
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IXFT150N30X3HV IXFT150N30X3HV IXYS IXF_150N30X3_HV.pdf 300VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 254nC
Reverse recovery time: 167ns
auf Bestellung 26 Stücke:
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4+21.79 EUR
5+20.82 EUR
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IXFP56N30X3 IXFP56N30X3 IXYS IXF_56N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 56A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 56nC
Reverse recovery time: 115ns
auf Bestellung 224 Stücke:
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9+8.91 EUR
11+6.52 EUR
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IXFK140N30P IXFK140N30P IXYS IXFK140N30P_IXFX140N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Gate charge: 185nC
On-state resistance: 24mΩ
Polarisation: unipolar
Kind of package: tube
Gate-source voltage: ±20V
Drain current: 140A
Type of transistor: N-MOSFET
Case: TO264
Drain-source voltage: 300V
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
Kind of channel: enhancement
auf Bestellung 256 Stücke:
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4+22.49 EUR
5+20.08 EUR
10+18.98 EUR
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IXFP38N30X3 IXFP38N30X3 IXYS IXF_38N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Reverse recovery time: 90ns
auf Bestellung 58 Stücke:
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16+4.6 EUR
18+4.08 EUR
50+3.66 EUR
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IXFP56N30X3M IXFP56N30X3M IXYS IXFP56N30X3M.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 56A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 56nC
Reverse recovery time: 115ns
auf Bestellung 311 Stücke:
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8+9.38 EUR
11+6.88 EUR
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IXFH72N30X3 IXFH72N30X3 IXYS IXF_72N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 72A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 82nC
Reverse recovery time: 100ns
auf Bestellung 3 Stücke:
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3+23.84 EUR
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IXFH52N30P IXFH52N30P IXYS IXF(V,H)52N30P(S).pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 52A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 110nC
Reverse recovery time: 160ns
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IXFP38N30X3M IXFP38N30X3M IXYS IXFP38N30X3M.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Reverse recovery time: 90ns
auf Bestellung 278 Stücke:
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IXFA38N30X3 IXFA38N30X3 IXYS IXF_38N30X3.pdf 300VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Reverse recovery time: 90ns
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IXFP26N30X3 IXFP26N30X3 IXYS IXF_26N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 26A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Reverse recovery time: 105ns
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IXFX210N30X3 IXFX210N30X3 IXYS IXF_210N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 375nC
Reverse recovery time: 190ns
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IXFP72N30X3 IXFP72N30X3 IXYS IXF_72N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 72A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 82nC
Reverse recovery time: 100ns
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IXFQ72N30X3 IXFQ72N30X3 IXYS IXF_72N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 72A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 82nC
Reverse recovery time: 100ns
auf Bestellung 297 Stücke:
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IXFT120N30X3HV IXFT120N30X3HV IXYS IXF_120N30X3_HV.pdf 300VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Mounting: SMD
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO268
Polarisation: unipolar
Reverse recovery time: 145ns
Gate charge: 170nC
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 735W
Kind of package: tube
auf Bestellung 12 Stücke:
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MMIX1F210N30P3
+1
 		MMIX1F210N30P3 IXYS media?resourcetype=datasheets&itemid=670ef26e-24b2-4f5e-8ee0-56c3d653d777&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Mounting: SMD
Case: SMPD
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 268nC
Reverse recovery time: 250ns
On-state resistance: 16mΩ
Drain current: 108A
Gate-source voltage: ±20V
Power dissipation: 520W
Pulsed drain current: 550A
Drain-source voltage: 300V
auf Bestellung 20 Stücke:
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IXFB170N30P IXFB170N30P IXYS IXFB170N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 170A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 258nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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IXTK140N30P IXTK140N30P IXYS IXTK140N30P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Gate charge: 185nC
On-state resistance: 0.24Ω
Polarisation: unipolar
Kind of package: tube
Gate-source voltage: ±20V
Drain current: 140A
Type of transistor: N-MOSFET
Case: TO264
Drain-source voltage: 300V
Power dissipation: 1.04kW
Technology: Polar™
Reverse recovery time: 250ns
Kind of channel: enhancement
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IXFK140N25T IXFK140N25T IXYS IXFK(X)140N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 17mΩ
Drain current: 140A
Drain-source voltage: 250V
Power dissipation: 960W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
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IXYK140N120A4 IXYS IXYK140N120A4_DS.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 1.5kW; TO264
Type of transistor: IGBT
Power dissipation: 1.5kW
Case: TO264
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 1.2kA
Produkt ist nicht verfügbar
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IXYK140N90C3 IXYK140N90C3 IXYS IXYK(X)140N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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DSA20C100PN DSA20C100PN IXYS DSA20C100PN.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.71V
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Max. forward voltage: 0.71V
Power dissipation: 35W
Load current: 10A x2
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.24kA
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DSA20C45PB DSA20C45PB IXYS DSA20C45PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220AB; Ufmax: 0.61V
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.61V
Power dissipation: 45W
Load current: 10A x2
Max. off-state voltage: 45V
Max. forward impulse current: 260A
auf Bestellung 312 Stücke:
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IXTK100N25P IXTK100N25P IXYS IXTK100N25P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Technology: PolarHT™
Type of transistor: N-MOSFET
Mounting: THT
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
Reverse recovery time: 200ns
Kind of channel: enhancement
On-state resistance: 27mΩ
Gate-source voltage: ±20V
Power dissipation: 600W
Drain-source voltage: 250V
Drain current: 100A
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IXFH12N100P IXFH12N100P IXYS IXFH12N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 263 Stücke:
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7+10.44 EUR
8+9.38 EUR
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10+7.72 EUR
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IXTH12N100L IXTH12N100L IXYS IXTH12N100L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
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CPC3703CTR CPC3703CTR IXYS CPC3703.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT89
On-state resistance: 4Ω
Drain current: 0.36A
Power dissipation: 1.1W
Gate-source voltage: ±15V
Drain-source voltage: 250V
Polarisation: unipolar
auf Bestellung 1478 Stücke:
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53+1.37 EUR
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250+0.5 EUR
500+0.49 EUR
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DSEK60-02A DSEK60-02A IXYS 238_L124.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-3
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 288 Stücke:
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DSEK60-02AR DSEK60-02AR IXYS 238_L124.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: ISOPLUS247™
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
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DNA30E2200PA DNA30E2200PA IXYS DNA30E2200PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Mounting: THT
Case: TO220AC
Type of diode: rectifying
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Load current: 30A
Max. off-state voltage: 2.2kV
Power dissipation: 210W
Kind of package: tube
Semiconductor structure: single diode
auf Bestellung 294 Stücke:
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DNA30E2200FE DNA30E2200FE IXYS media?resourcetype=datasheets&itemid=b450a78f-15ed-4d9b-87fd-45be0f83674f&filename=Littelfuse-Power-Semiconductors-DNA30E2200FE-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; Ufmax: 1.22V
Mounting: THT
Case: ISOPLUS i4-pac™ x024e
Features of semiconductor devices: high voltage
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Max. forward voltage: 1.22V
Load current: 30A
Power dissipation: 110W
Max. forward impulse current: 370A
Max. off-state voltage: 2.2kV
auf Bestellung 229 Stücke:
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8+9.01 EUR
10+7.38 EUR
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CNA30E2200FB IXYS CNA30E2200FB.pdf Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; 30A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Features of semiconductor devices: phase control thyristor (PCT)
Type of thyristor: thyristor
Gate current: 250mA
Load current: 30A
Max. forward impulse current: 200A
Max. off-state voltage: 2.2kV
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CNE60E2200TZ-TUB IXYS Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; Ifmax: 94A; 60A; Igt: 80mA; D3PAK,TO268AA; SMD
Mounting: SMD
Case: D3PAK; TO268AA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
Load current: 60A
Max. load current: 94A
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
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DNA30E2200PZ-TRL IXYS media?resourcetype=datasheets&itemid=15a76a8f-64ce-441e-839f-231a223f6827&filename=Littelfuse-Power-Semiconductors-DNA30E2200PZ-Datasheet Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; D2PAK; Ufmax: 1.26V; Ifsm: 370A
Mounting: SMD
Case: D2PAK
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward voltage: 1.26V
Load current: 30A
Max. forward impulse current: 370A
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
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CPC1786J CPC1786.pdf
CPC1786J
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 800mA; max.1kVDC; THT; i4-pac; OptoMOS; 2Ω
Mounting: THT
Kind of output: MOSFET
Case: i4-pac
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Turn-on time: 20ms
Control current max.: 100mA
Max. operating current: 0.8A
On-state resistance: 2Ω
Switched voltage: max. 1kV DC
Insulation voltage: 2.5kV
Relay variant: current source
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
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IXyH100N65C3 IXYH100N65C3.pdf
IXyH100N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 62ns
Gate charge: 172nC
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 420A
Collector-emitter voltage: 650V
Power dissipation: 830W
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.64 EUR
6+13.63 EUR
10+12.58 EUR
30+10.61 EUR
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IXYN100N65C3H1 IXYN100N65C3H1.pdf
IXYN100N65C3H1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 90A; SOT227B; 600W
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 90A
Type of semiconductor module: IGBT
Pulsed collector current: 420A
Max. off-state voltage: 650V
Mechanical mounting: screw
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IXYN100N65B3D1 IXYN100N65B3D1.pdf
IXYN100N65B3D1
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Type of semiconductor module: IGBT
Pulsed collector current: 490A
Max. off-state voltage: 650V
Mechanical mounting: screw
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IXFN100N65X2 IXFN100N65X2.pdf
IXFN100N65X2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 78A; SOT227B; screw; Idm: 200A
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Gate charge: 183nC
Reverse recovery time: 200ns
On-state resistance: 30mΩ
Gate-source voltage: ±40V
Drain current: 78A
Pulsed drain current: 200A
Power dissipation: 595W
Drain-source voltage: 650V
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IXYX100N65B3D1 IXYK(X)100N65B3D1.pdf
IXYX100N65B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 830W
Case: PLUS247™
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 358ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 460A
Collector-emitter voltage: 650V
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IXYH100N65A3 IXYH100N65A3.pdf
IXYH100N65A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 470W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 470W
Case: TO247-3
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Turn-on time: 87ns
Turn-off time: 459ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IXFX100N65X2 IXFK(X)100N65X2.pdf
IXFX100N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: PLUS247™
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Polarisation: unipolar
Gate charge: 183nC
Reverse recovery time: 200ns
On-state resistance: 30mΩ
Drain current: 100A
Power dissipation: 1.04kW
Drain-source voltage: 650V
Produkt ist nicht verfügbar
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IXYH100N65C5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYH100N65C5Datasheet.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 750W; TO247-3
Type of transistor: IGBT
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 560A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IXYN100N65A3 IXYN100N65A3.pdf
IXYN100N65A3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Type of semiconductor module: IGBT
Pulsed collector current: 460A
Max. off-state voltage: 650V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXYR100N65A3V1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; ISOPLUS247™
Type of transistor: IGBT
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Collector current: 100A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IXTP32P20T IXT_32P20T.pdf
IXTP32P20T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Reverse recovery time: 190ns
Gate charge: 185nC
On-state resistance: 0.13Ω
Gate-source voltage: ±15V
Power dissipation: 300W
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.88 EUR
9+8.07 EUR
10+7.16 EUR
50+7.02 EUR
Mindestbestellmenge: 8
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IXTP32P05T IXT_32P05T.pdf
IXTP32P05T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Reverse recovery time: 26ns
Gate charge: 46nC
On-state resistance: 39mΩ
Gate-source voltage: ±15V
Power dissipation: 83W
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
Mindestbestellmenge: 11
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IXKK85N60C IXKK85N60C.pdf
IXKK85N60C
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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CPC1130N CPC1130N.pdf
CPC1130N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.96 EUR
Mindestbestellmenge: 12
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CPC3730CTR CPC3730.pdf
CPC3730CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.1 EUR
Mindestbestellmenge: 23
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IXFH88N30P IXFH(K,T)88N30P.pdf
IXFH88N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 40mΩ
Drain current: 88A
Drain-source voltage: 300V
Power dissipation: 600W
Kind of channel: enhancement
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.53 EUR
10+12.1 EUR
30+11.74 EUR
Mindestbestellmenge: 6
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IXFH70N30Q3 IXFH(T)70N30Q3.pdf
IXFH70N30Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 54mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.27 EUR
10+13.38 EUR
Mindestbestellmenge: 5
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IXFQ94N30P3 IXFH(Q,T)94N30P3.pdf
IXFQ94N30P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 94A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 102nC
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.31 EUR
7+11.17 EUR
10+9.98 EUR
30+9.61 EUR
Mindestbestellmenge: 6
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IXFK150N30P3 IXFK(X)150N30P3.pdf
IXFK150N30P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Case: TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 197nC
On-state resistance: 19mΩ
Drain current: 150A
Drain-source voltage: 300V
Mounting: THT
Power dissipation: 1.3kW
Kind of package: tube
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.34 EUR
10+19.56 EUR
Mindestbestellmenge: 4
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IXFK88N30P IXFH(K,T)88N30P.pdf
IXFK88N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 40mΩ
Drain current: 88A
Drain-source voltage: 300V
Power dissipation: 600W
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXFL210N30P3 IXFL210N30P3.pdf
IXFL210N30P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 268nC
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXTT88N30P IXTH88N30P-DTE.pdf
IXTT88N30P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
Reverse recovery time: 250ns
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.1 EUR
6+12.96 EUR
10+12.1 EUR
Mindestbestellmenge: 5
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IXTA36N30P IXTA36N30P-DTE.pdf
IXTA36N30P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Reverse recovery time: 250ns
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.45 EUR
20+3.65 EUR
Mindestbestellmenge: 14
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IXFH50N30Q3 IXFH50N30Q3_IXFT50N30Q3.pdf
IXFH50N30Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 50A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 65nC
Reverse recovery time: 250ns
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.2 EUR
Mindestbestellmenge: 6
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IXTQ88N30P IXTH88N30P-DTE.pdf
IXTQ88N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
Reverse recovery time: 250ns
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.71 EUR
7+11.81 EUR
10+10.48 EUR
30+9.81 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFH56N30X3 IXF_56N30X3.pdf 300VProductBrief.pdf
IXFH56N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 56A
Power dissipation: 320W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 56nC
Reverse recovery time: 115ns
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.55 EUR
10+8.25 EUR
Mindestbestellmenge: 7
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IXFT150N30X3HV IXF_150N30X3_HV.pdf 300VProductBrief.pdf
IXFT150N30X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 254nC
Reverse recovery time: 167ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.79 EUR
5+20.82 EUR
Mindestbestellmenge: 4
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IXFP56N30X3 IXF_56N30X3.pdf 300VProductBrief.pdf
IXFP56N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 56A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 56nC
Reverse recovery time: 115ns
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.91 EUR
11+6.52 EUR
Mindestbestellmenge: 9
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IXFK140N30P IXFK140N30P_IXFX140N30P.pdf
IXFK140N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Gate charge: 185nC
On-state resistance: 24mΩ
Polarisation: unipolar
Kind of package: tube
Gate-source voltage: ±20V
Drain current: 140A
Type of transistor: N-MOSFET
Case: TO264
Drain-source voltage: 300V
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
Kind of channel: enhancement
auf Bestellung 256 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+22.49 EUR
5+20.08 EUR
10+18.98 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFP38N30X3 IXF_38N30X3.pdf 300VProductBrief.pdf
IXFP38N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Reverse recovery time: 90ns
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.12 EUR
16+4.6 EUR
18+4.08 EUR
50+3.66 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXFP56N30X3M IXFP56N30X3M.pdf 300VProductBrief.pdf
IXFP56N30X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 56A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 56nC
Reverse recovery time: 115ns
auf Bestellung 311 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.38 EUR
11+6.88 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXFH72N30X3 IXF_72N30X3.pdf 300VProductBrief.pdf
IXFH72N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 72A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 82nC
Reverse recovery time: 100ns
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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IXFH52N30P IXF(V,H)52N30P(S).pdf
IXFH52N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 52A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 110nC
Reverse recovery time: 160ns
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.91 EUR
10+7.29 EUR
12+6.49 EUR
30+5.62 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFP38N30X3M IXFP38N30X3M.pdf 300VProductBrief.pdf
IXFP38N30X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Reverse recovery time: 90ns
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.65 EUR
15+4.85 EUR
50+4.39 EUR
Mindestbestellmenge: 13
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IXFA38N30X3 IXF_38N30X3.pdf 300VProductBrief.pdf
IXFA38N30X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Reverse recovery time: 90ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.12 EUR
16+4.53 EUR
Mindestbestellmenge: 14
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IXFP26N30X3 IXF_26N30X3.pdf 300VProductBrief.pdf
IXFP26N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 26A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Reverse recovery time: 105ns
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.8 EUR
25+2.97 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IXFX210N30X3 IXF_210N30X3.pdf 300VProductBrief.pdf
IXFX210N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 375nC
Reverse recovery time: 190ns
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+33.16 EUR
5+32.07 EUR
Mindestbestellmenge: 3
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IXFP72N30X3 IXF_72N30X3.pdf 300VProductBrief.pdf
IXFP72N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 72A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 82nC
Reverse recovery time: 100ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.85 EUR
10+8.14 EUR
25+7.92 EUR
Mindestbestellmenge: 7
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IXFQ72N30X3 IXF_72N30X3.pdf 300VProductBrief.pdf
IXFQ72N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 72A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 82nC
Reverse recovery time: 100ns
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.72 EUR
10+8.88 EUR
30+8.65 EUR
Mindestbestellmenge: 7
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IXFT120N30X3HV IXF_120N30X3_HV.pdf 300VProductBrief.pdf
IXFT120N30X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Mounting: SMD
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO268
Polarisation: unipolar
Reverse recovery time: 145ns
Gate charge: 170nC
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 735W
Kind of package: tube
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.78 EUR
10+16.02 EUR
Mindestbestellmenge: 4
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MMIX1F210N30P3 media?resourcetype=datasheets&itemid=670ef26e-24b2-4f5e-8ee0-56c3d653d777&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf
MMIX1F210N30P3MMIX1F210N30P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Mounting: SMD
Case: SMPD
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 268nC
Reverse recovery time: 250ns
On-state resistance: 16mΩ
Drain current: 108A
Gate-source voltage: ±20V
Power dissipation: 520W
Pulsed drain current: 550A
Drain-source voltage: 300V
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+57.77 EUR
3+51.02 EUR
10+45.87 EUR
20+45.82 EUR
Mindestbestellmenge: 2
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IXFB170N30P IXFB170N30P.pdf
IXFB170N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 170A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 258nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.37 EUR
Mindestbestellmenge: 3
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IXTK140N30P IXTK140N30P-DTE.pdf
IXTK140N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Gate charge: 185nC
On-state resistance: 0.24Ω
Polarisation: unipolar
Kind of package: tube
Gate-source voltage: ±20V
Drain current: 140A
Type of transistor: N-MOSFET
Case: TO264
Drain-source voltage: 300V
Power dissipation: 1.04kW
Technology: Polar™
Reverse recovery time: 250ns
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK140N25T IXFK(X)140N25T.pdf
IXFK140N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 17mΩ
Drain current: 140A
Drain-source voltage: 250V
Power dissipation: 960W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXYK140N120A4 IXYK140N120A4_DS.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 1.5kW; TO264
Type of transistor: IGBT
Power dissipation: 1.5kW
Case: TO264
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 1.2kA
Produkt ist nicht verfügbar
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IXYK140N90C3 IXYK(X)140N90C3.pdf
IXYK140N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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DSA20C100PN DSA20C100PN.pdf
DSA20C100PN
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.71V
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Max. forward voltage: 0.71V
Power dissipation: 35W
Load current: 10A x2
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.24kA
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.93 EUR
Mindestbestellmenge: 37
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DSA20C45PB DSA20C45PB.pdf
DSA20C45PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220AB; Ufmax: 0.61V
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.61V
Power dissipation: 45W
Load current: 10A x2
Max. off-state voltage: 45V
Max. forward impulse current: 260A
auf Bestellung 312 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
148+0.49 EUR
149+0.48 EUR
Mindestbestellmenge: 143
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IXTK100N25P IXTK100N25P-DTE.pdf
IXTK100N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Technology: PolarHT™
Type of transistor: N-MOSFET
Mounting: THT
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
Reverse recovery time: 200ns
Kind of channel: enhancement
On-state resistance: 27mΩ
Gate-source voltage: ±20V
Power dissipation: 600W
Drain-source voltage: 250V
Drain current: 100A
Produkt ist nicht verfügbar
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IXFH12N100P IXFH12N100P.pdf
IXFH12N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 263 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.44 EUR
8+9.38 EUR
9+8.71 EUR
10+7.72 EUR
30+7.54 EUR
Mindestbestellmenge: 7
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IXTH12N100L IXTH12N100L.pdf
IXTH12N100L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
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CPC3703CTR CPC3703.pdf
CPC3703CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT89
On-state resistance: 4Ω
Drain current: 0.36A
Power dissipation: 1.1W
Gate-source voltage: ±15V
Drain-source voltage: 250V
Polarisation: unipolar
auf Bestellung 1478 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.37 EUR
83+0.87 EUR
125+0.57 EUR
250+0.5 EUR
500+0.49 EUR
Mindestbestellmenge: 53
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DSEK60-02A 238_L124.pdf
DSEK60-02A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-3
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 288 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.89 EUR
14+5.21 EUR
Mindestbestellmenge: 13
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DSEK60-02AR 238_L124.pdf
DSEK60-02AR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: ISOPLUS247™
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Produkt ist nicht verfügbar
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DNA30E2200PA DNA30E2200PA.pdf
DNA30E2200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Mounting: THT
Case: TO220AC
Type of diode: rectifying
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Load current: 30A
Max. off-state voltage: 2.2kV
Power dissipation: 210W
Kind of package: tube
Semiconductor structure: single diode
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.59 EUR
19+3.8 EUR
22+3.4 EUR
25+3.35 EUR
Mindestbestellmenge: 16
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DNA30E2200FE media?resourcetype=datasheets&itemid=b450a78f-15ed-4d9b-87fd-45be0f83674f&filename=Littelfuse-Power-Semiconductors-DNA30E2200FE-Datasheet
DNA30E2200FE
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; Ufmax: 1.22V
Mounting: THT
Case: ISOPLUS i4-pac™ x024e
Features of semiconductor devices: high voltage
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Max. forward voltage: 1.22V
Load current: 30A
Power dissipation: 110W
Max. forward impulse current: 370A
Max. off-state voltage: 2.2kV
auf Bestellung 229 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.01 EUR
10+7.38 EUR
25+7.25 EUR
Mindestbestellmenge: 8
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CNA30E2200FB CNA30E2200FB.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; 30A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Features of semiconductor devices: phase control thyristor (PCT)
Type of thyristor: thyristor
Gate current: 250mA
Load current: 30A
Max. forward impulse current: 200A
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
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CNE60E2200TZ-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; Ifmax: 94A; 60A; Igt: 80mA; D3PAK,TO268AA; SMD
Mounting: SMD
Case: D3PAK; TO268AA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
Load current: 60A
Max. load current: 94A
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
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DNA30E2200PZ-TRL media?resourcetype=datasheets&itemid=15a76a8f-64ce-441e-839f-231a223f6827&filename=Littelfuse-Power-Semiconductors-DNA30E2200PZ-Datasheet
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; D2PAK; Ufmax: 1.26V; Ifsm: 370A
Mounting: SMD
Case: D2PAK
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward voltage: 1.26V
Load current: 30A
Max. forward impulse current: 370A
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
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