| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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CS45-16IO1 | IXYS |
 Category: SMD/THT thyristorsDescription: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.6kV Max. load current: 71A Load current: 45A Gate current: 80mA Case: TO247AD Mounting: THT Kind of package: tube Max. forward impulse current: 520A |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CS45-16IO1R | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT Case: TO247AD Mounting: THT Kind of package: tube Max. forward impulse current: 520A Gate current: 80mA Max. off-state voltage: 1.6kV Load current: 45A Max. load current: 71A Type of thyristor: standard |
auf Bestellung 197 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CS45-12IO1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT Case: TO247AD Mounting: THT Kind of package: tube Max. forward impulse current: 520A Gate current: 80mA Max. off-state voltage: 1.2kV Load current: 45A Max. load current: 71A Type of thyristor: standard |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP100N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 150W Case: TO220AB On-state resistance: 7mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube Reverse recovery time: 34ns Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP48P05T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 150W Gate charge: 53nC Polarisation: unipolar Technology: TrenchP™ Drain current: -48A Kind of channel: enhancement Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±15V On-state resistance: 30mΩ Reverse recovery time: 30ns |
auf Bestellung 291 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTY48P05T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252 Case: TO252 Mounting: SMD Kind of package: tube Power dissipation: 150W Gate charge: 53nC Polarisation: unipolar Technology: TrenchP™ Drain current: -48A Kind of channel: enhancement Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±15V On-state resistance: 30mΩ Reverse recovery time: 30ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA48P05T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263 Case: TO263 Mounting: SMD Kind of package: tube Power dissipation: 150W Gate charge: 53nC Polarisation: unipolar Technology: TrenchP™ Drain current: -48A Kind of channel: enhancement Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±15V On-state resistance: 30mΩ Reverse recovery time: 30ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA48P05T-TRL | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; 50V; 48A; 150W; D2PAK,TO263 Case: D2PAK; TO263 Mounting: SMD Power dissipation: 150W Drain current: 48A Kind of channel: enhancement Drain-source voltage: 50V Type of transistor: P-MOSFET Gate-source voltage: 15V On-state resistance: 30mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTY48P05T-TRL | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; 50V; 48A; 150W; DPAK,TO252AA Case: DPAK; TO252AA Mounting: SMD Power dissipation: 150W Drain current: 48A Kind of channel: enhancement Drain-source voltage: 50V Type of transistor: P-MOSFET Gate-source voltage: 15V On-state resistance: 30mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NCD2400MTR | IXYS |
Category: Integrated circuits - others Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6 Type of integrated circuit: digital capacitor Interface: 2-wire; I2C Kind of memory: EEPROM; non-volatile Case: DFN6 Mounting: SMD Operating temperature: -40...105°C Supply voltage: 2.5...5.5V Kind of package: reel; tape Application: for OCXO application Capacitance: 1.7...203pF Number of positions: 512 Integrated circuit features: programmable |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXDH20N120 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 175ns Turn-off time: 570ns |
auf Bestellung 176 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1966Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase Type of relay: solid state Max. operating current: 3A Switched voltage: max. 240V AC Relay variant: 1-phase Switching method: zero voltage switching Body dimensions: 21.08x10.16x3.3mm Operating temperature: -40...85°C Case: SIP4 Control current max.: 50mA Mounting: THT Insulation voltage: 3.75kV |
auf Bestellung 1132 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1966YX6 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Insulation voltage: 3.75kV Turn-on time: 500µs Switching method: instantaneous switching Switched voltage: max. 600V AC Case: SIP4 Max. operating current: 3A Control current max.: 50mA Type of relay: solid state Mounting: THT Relay variant: 1-phase |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH60N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 60A Power dissipation: 1.04kW Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns |
auf Bestellung 132 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1906Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC Manufacturer series: OptoMOS Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 10ms Switched voltage: max. 60V AC; max. 60V DC Case: SIP4 Max. operating current: 2A Turn-off time: 5ms Control current max.: 50mA On-state resistance: 0.3Ω Type of relay: solid state Mounting: THT Relay variant: 1-phase; current source Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MIXA10WB1200TED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 12A Case: E2-Pack Application: motors; photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 30A Mechanical mounting: screw Power dissipation: 60W Technology: Sonic FRD™; XPT™ |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CLB30I1200HB | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT Max. off-state voltage: 1.2kV Load current: 30A Max. forward impulse current: 325A Case: TO247AD Gate current: 50mA Max. load current: 47A Kind of package: tube Type of thyristor: standard Mounting: THT |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CLB30I1200PZ-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV Max. off-state voltage: 1.2kV Load current: 30A Max. forward impulse current: 255A Case: TO263ABHV Gate current: 30/50mA Max. load current: 47A Kind of package: tube Type of thyristor: standard Mounting: SMD |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CLB30I1200PZ-TRL | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape Case: D2PAK Mounting: SMD Max. off-state voltage: 1.2kV Load current: 30A Kind of package: reel; tape Type of thyristor: thyristor Gate current: 30mA Max. load current: 47A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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LBA110 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Control current max.: 50mA |
auf Bestellung 105 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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LBA110S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
auf Bestellung 227 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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LBA110L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP8 Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1010N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 1.5kV Turn-on time: 3ms Switched voltage: max. 250V AC; max. 250V DC Case: SOP4 Max. operating current: 0.17A Turn-off time: 3ms Control current max.: 50mA On-state resistance: 11.5Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 4.09x3.81x2.03mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CPC1010NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 1.5kV Turn-on time: 3ms Switched voltage: max. 250V AC; max. 250V DC Case: SOP4 Max. operating current: 0.17A Turn-off time: 3ms Control current max.: 50mA On-state resistance: 11.5Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 4.09x3.81x2.03mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CPC1016NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 1.5kV Turn-on time: 2ms Switched voltage: max. 100V AC; max. 100V DC Case: SOP4 Max. operating current: 0.1A Turn-off time: 1ms Control current max.: 50mA On-state resistance: 16Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 4.09x3.81x2.03mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CPC1019NTR | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms Type of relay: solid state Max. operating current: 750mA Switched voltage: max. 60V DC Mounting: SMT Case: SOP4 Manufacturer series: OptoMOS Body dimensions: 4.09x3.81x2.03mm Turn-on time: 3ms Turn-off time: 3ms Contacts configuration: SPST-NO On-state resistance: 0.6Ω Control current max.: 50mA Kind of output: MOSFET Insulation voltage: 1.5kV Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTQ200N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns Case: TO3P Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 152nC Reverse recovery time: 76ns On-state resistance: 5.5mΩ Drain current: 200A Drain-source voltage: 100V Power dissipation: 550W Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXGP20N120B | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Gate charge: 72nC Kind of package: tube Turn-off time: 150ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXXH80N65B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 625W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 430A Mounting: THT Gate charge: 0.12µC Kind of package: tube Technology: GenX4™; Trench; XPT™ Turn-on time: 125ns Turn-off time: 222ns |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DPF80C200HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W Kind of package: tube Case: TO247-3 Features of semiconductor devices: fast switching Mounting: THT Technology: HiPerFRED™ 2nd Gen Type of diode: rectifying Reverse recovery time: 55ns Max. forward voltage: 1.22V Power dissipation: 215W Load current: 40A x2 Max. off-state voltage: 200V Max. forward impulse current: 560A Semiconductor structure: common cathode; double |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH110N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 110A Power dissipation: 694W Case: TO247-3 On-state resistance: 26mΩ Mounting: THT Gate charge: 157nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 256 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP110N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 180W Case: TO220AB On-state resistance: 6.6mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 38ns |
auf Bestellung 278 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH110N15T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns Case: TO247-3 Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 150nC Reverse recovery time: 85ns On-state resistance: 13mΩ Drain current: 110A Drain-source voltage: 150V Power dissipation: 480W |
auf Bestellung 284 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH110N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 110A Power dissipation: 694W Case: TO247-3 On-state resistance: 26mΩ Mounting: THT Gate charge: 157nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 170ns Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFA110N15T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns Case: TO263 Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 150nC Reverse recovery time: 85ns On-state resistance: 13mΩ Drain current: 110A Drain-source voltage: 150V Power dissipation: 480W |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH110N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 480W Case: TO247-3 On-state resistance: 15mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Polar™ |
auf Bestellung 171 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DSB60C30PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V Mounting: THT Type of diode: Schottky rectifying Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.49V Load current: 30A x2 Max. off-state voltage: 30V Max. forward impulse current: 530A Power dissipation: 145W Case: TO220AB Kind of package: tube Semiconductor structure: common cathode; double |
auf Bestellung 160 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DSB60C60PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V Mounting: THT Type of diode: Schottky rectifying Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.69V Load current: 30A x2 Max. off-state voltage: 60V Max. forward impulse current: 490A Power dissipation: 145W Case: TO220AB Kind of package: tube Semiconductor structure: common cathode; double |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DSB60C30HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V Mounting: THT Type of diode: Schottky rectifying Max. forward voltage: 0.47V Load current: 30A x2 Max. off-state voltage: 30V Max. forward impulse current: 570A Power dissipation: 130W Case: TO247-3 Kind of package: tube Semiconductor structure: common cathode; double |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DSB60C45HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.58V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 0.58V Max. forward impulse current: 570A Power dissipation: 130W Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DSB60C45PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.6V Max. forward impulse current: 490A Power dissipation: 145W Kind of package: tube Heatsink thickness: 1.14...1.39mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXYP8N90C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3 Collector current: 8A Mounting: THT Collector-emitter voltage: 900V Power dissipation: 125W Gate charge: 13.3nC Technology: GenX3™; Planar; XPT™ Pulsed collector current: 48A Type of transistor: IGBT Turn-on time: 39ns Kind of package: tube Case: TO220-3 Turn-off time: 238ns Gate-emitter voltage: ±20V |
auf Bestellung 105 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXYP8N90C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3 Collector current: 8A Mounting: THT Collector-emitter voltage: 900V Power dissipation: 125W Gate charge: 13.3nC Technology: GenX3™; Planar; XPT™ Pulsed collector current: 48A Type of transistor: IGBT Turn-on time: 39ns Kind of package: tube Case: TO220-3 Turn-off time: 238ns Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXBOD2-56R | IXYS |
Category: Thyristors - others Description: Thyristor: BOD x4; 0.9A; BOD; THT; 2nd Gen; 5.6kV; bulk Mounting: THT Type of thyristor: BOD x4 Case: BOD Max. load current: 0.9A Breakover voltage: 5.6kV Technology: 2nd Gen Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH120N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 480W Case: TO247-3 On-state resistance: 12mΩ Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 140ns Features of semiconductor devices: ultra junction x-class |
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IXFH120N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 120A Power dissipation: 714W Case: TO247-3 On-state resistance: 22mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 100ns Technology: HiPerFET™; Polar™ |
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IXFH120N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 120A Power dissipation: 600W Case: TO247-3 On-state resistance: 16mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
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DSEI120-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 109A; Ifsm: 540A; TO247-2; tube; 357W Power dissipation: 357W Case: TO247-2 Mounting: THT Kind of package: tube Max. forward impulse current: 540A Max. forward voltage: 1.55V Technology: FRED Features of semiconductor devices: fast switching Max. off-state voltage: 1.2kV Load current: 109A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 40ns |
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DSEI120-12AZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AA; Ufmax: 1.55V Power dissipation: 357W Case: TO268AA Mounting: SMD Kind of package: tube Max. forward impulse current: 540A Max. forward voltage: 1.55V Technology: FRED Features of semiconductor devices: fast switching Max. off-state voltage: 1.2kV Load current: 109A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 40ns |
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DSEI12-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 11A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO220AC Max. forward voltage: 2.2V Max. forward impulse current: 75A Power dissipation: 78W Technology: FRED Kind of package: tube Heatsink thickness: 1.14...1.39mm |
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| DSEI12-12AZ-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 12A; 50ns; D2PAK,TO263AB; Ufmax: 2.6V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 12A Reverse recovery time: 50ns Semiconductor structure: single diode Case: D2PAK; TO263AB Max. forward voltage: 2.6V Max. forward impulse current: 75A Technology: FRED Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DSEI12-12AZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 11A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO263ABHV Max. forward voltage: 2.2V Max. forward impulse current: 75A Power dissipation: 78W Technology: FRED Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IXTA100N04T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 150W Case: TO263 On-state resistance: 7mΩ Mounting: SMD Kind of channel: enhancement Kind of package: tube Reverse recovery time: 34ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXA30RG1200DHGLB | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT Max. off-state voltage: 1.2kV Electrical mounting: SMT Case: SMPD-B Type of semiconductor module: IGBT Power dissipation: 147W Technology: ISOPLUS™; Sonic FRD™ Pulsed collector current: 75A Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 30A Topology: boost chopper |
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IXA20PG1200DHGLB | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 23A Case: SMPD-B Electrical mounting: SMT Gate-emitter voltage: ±20V Pulsed collector current: 45A Power dissipation: 130W Technology: ISOPLUS™; Sonic FRD™ |
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CLA30E1200HB | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 28mA; TO247AD; THT Max. off-state voltage: 1.2kV Load current: 30A Max. forward impulse current: 0.3kA Case: TO247AD Gate current: 28mA Max. load current: 47A Kind of package: tube Type of thyristor: standard Mounting: THT |
auf Bestellung 267 Stücke: Lieferzeit 14-21 Tag (e) |
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DCG10P1200HR | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 12.5A; ISO247™; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 12.5A Semiconductor structure: double series Case: ISO247™ Max. forward voltage: 2.2V Max. forward impulse current: 750A Kind of package: tube Features of semiconductor devices: ultrafast switching |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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DCG17P1200HR | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18A; ISO247™; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 18A Semiconductor structure: double series Case: ISO247™ Max. forward voltage: 2.2V Max. forward impulse current: 1kA Kind of package: tube Features of semiconductor devices: ultrafast switching |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN100N50P | IXYS |
Category: Transistor modules Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 75A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 49mΩ Pulsed drain current: 250A Power dissipation: 1.04kW Technology: HiPerFET™ Gate-source voltage: ±30V Mechanical mounting: screw Kind of channel: enhancement Reverse recovery time: 200ns Gate charge: 240nC |
auf Bestellung 278 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1973Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC Operating temperature: -40...85°C Mounting: THT Manufacturer series: OptoMOS Relay variant: 1-phase Kind of output: MOSFET Body dimensions: 21.08x10.16x3.3mm Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 5ms Switched voltage: max. 400V AC Case: SIP4 Max. operating current: 0.35mA Turn-off time: 3ms Control current max.: 50mA On-state resistance: 5Ω Type of relay: solid state |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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| CS45-16IO1 |
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Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| CS45-16IO1R |
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Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
Gate current: 80mA
Max. off-state voltage: 1.6kV
Load current: 45A
Max. load current: 71A
Type of thyristor: standard
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
Gate current: 80mA
Max. off-state voltage: 1.6kV
Load current: 45A
Max. load current: 71A
Type of thyristor: standard
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)
| CS45-12IO1 |
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Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
Gate current: 80mA
Max. off-state voltage: 1.2kV
Load current: 45A
Max. load current: 71A
Type of thyristor: standard
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
Gate current: 80mA
Max. off-state voltage: 1.2kV
Load current: 45A
Max. load current: 71A
Type of thyristor: standard
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTP100N04T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 34ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 34ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 300 Stücke:
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| IXTP48P05T |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 150W
Gate charge: 53nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 30ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 150W
Gate charge: 53nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 30ns
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTY48P05T |
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Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Case: TO252
Mounting: SMD
Kind of package: tube
Power dissipation: 150W
Gate charge: 53nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 30ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Case: TO252
Mounting: SMD
Kind of package: tube
Power dissipation: 150W
Gate charge: 53nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXTA48P05T |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Power dissipation: 150W
Gate charge: 53nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 30ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Power dissipation: 150W
Gate charge: 53nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXTA48P05T-TRL |
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Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Power dissipation: 150W
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: P-MOSFET
Gate-source voltage: 15V
On-state resistance: 30mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Power dissipation: 150W
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: P-MOSFET
Gate-source voltage: 15V
On-state resistance: 30mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXTY48P05T-TRL |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; DPAK,TO252AA
Case: DPAK; TO252AA
Mounting: SMD
Power dissipation: 150W
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: P-MOSFET
Gate-source voltage: 15V
On-state resistance: 30mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; DPAK,TO252AA
Case: DPAK; TO252AA
Mounting: SMD
Power dissipation: 150W
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: P-MOSFET
Gate-source voltage: 15V
On-state resistance: 30mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| NCD2400MTR |
|
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Type of integrated circuit: digital capacitor
Interface: 2-wire; I2C
Kind of memory: EEPROM; non-volatile
Case: DFN6
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.5...5.5V
Kind of package: reel; tape
Application: for OCXO application
Capacitance: 1.7...203pF
Number of positions: 512
Integrated circuit features: programmable
Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Type of integrated circuit: digital capacitor
Interface: 2-wire; I2C
Kind of memory: EEPROM; non-volatile
Case: DFN6
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.5...5.5V
Kind of package: reel; tape
Application: for OCXO application
Capacitance: 1.7...203pF
Number of positions: 512
Integrated circuit features: programmable
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| IXDH20N120 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 175ns
Turn-off time: 570ns
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 175ns
Turn-off time: 570ns
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1966Y |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Type of relay: solid state
Max. operating current: 3A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Switching method: zero voltage switching
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Case: SIP4
Control current max.: 50mA
Mounting: THT
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Type of relay: solid state
Max. operating current: 3A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Switching method: zero voltage switching
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Case: SIP4
Control current max.: 50mA
Mounting: THT
Insulation voltage: 3.75kV
auf Bestellung 1132 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1966YX6 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 500µs
Switching method: instantaneous switching
Switched voltage: max. 600V AC
Case: SIP4
Max. operating current: 3A
Control current max.: 50mA
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 500µs
Switching method: instantaneous switching
Switched voltage: max. 600V AC
Case: SIP4
Max. operating current: 3A
Control current max.: 50mA
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Produkt ist nicht verfügbar
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| IXFH60N50P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1906Y |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 10ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SIP4
Max. operating current: 2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.3Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 10ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SIP4
Max. operating current: 2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.3Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
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| MIXA10WB1200TED |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 12A
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mechanical mounting: screw
Power dissipation: 60W
Technology: Sonic FRD™; XPT™
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 12A
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mechanical mounting: screw
Power dissipation: 60W
Technology: Sonic FRD™; XPT™
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
| CLB30I1200HB |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 325A
Case: TO247AD
Gate current: 50mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: THT
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 325A
Case: TO247AD
Gate current: 50mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: THT
auf Bestellung 39 Stücke:
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| CLB30I1200PZ-TUB |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Case: TO263ABHV
Gate current: 30/50mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: SMD
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Case: TO263ABHV
Gate current: 30/50mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: SMD
auf Bestellung 5 Stücke:
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| CLB30I1200PZ-TRL |
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| LBA110 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Control current max.: 50mA
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
| LBA110S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
| LBA110L |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1010N |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 250V AC; max. 250V DC
Case: SOP4
Max. operating current: 0.17A
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 11.5Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 250V AC; max. 250V DC
Case: SOP4
Max. operating current: 0.17A
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 11.5Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
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| CPC1010NTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 250V AC; max. 250V DC
Case: SOP4
Max. operating current: 0.17A
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 11.5Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 250V AC; max. 250V DC
Case: SOP4
Max. operating current: 0.17A
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 11.5Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| CPC1016NTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 100V AC; max. 100V DC
Case: SOP4
Max. operating current: 0.1A
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 16Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 100V AC; max. 100V DC
Case: SOP4
Max. operating current: 0.1A
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 16Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| CPC1019NTR |
|
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Type of relay: solid state
Max. operating current: 750mA
Switched voltage: max. 60V DC
Mounting: SMT
Case: SOP4
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Turn-on time: 3ms
Turn-off time: 3ms
Contacts configuration: SPST-NO
On-state resistance: 0.6Ω
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Type of relay: solid state
Max. operating current: 750mA
Switched voltage: max. 60V DC
Mounting: SMT
Case: SOP4
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Turn-on time: 3ms
Turn-off time: 3ms
Contacts configuration: SPST-NO
On-state resistance: 0.6Ω
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| IXTQ200N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Case: TO3P
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 76ns
On-state resistance: 5.5mΩ
Drain current: 200A
Drain-source voltage: 100V
Power dissipation: 550W
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Case: TO3P
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 76ns
On-state resistance: 5.5mΩ
Drain current: 200A
Drain-source voltage: 100V
Power dissipation: 550W
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IXGP20N120B |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Turn-off time: 150ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Turn-off time: 150ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXXH80N65B4 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Turn-on time: 125ns
Turn-off time: 222ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Turn-on time: 125ns
Turn-off time: 222ns
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
| DPF80C200HB |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W
Kind of package: tube
Case: TO247-3
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 55ns
Max. forward voltage: 1.22V
Power dissipation: 215W
Load current: 40A x2
Max. off-state voltage: 200V
Max. forward impulse current: 560A
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W
Kind of package: tube
Case: TO247-3
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 55ns
Max. forward voltage: 1.22V
Power dissipation: 215W
Load current: 40A x2
Max. off-state voltage: 200V
Max. forward impulse current: 560A
Semiconductor structure: common cathode; double
auf Bestellung 1 Stücke:
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| IXFH110N25T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 256 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTP110N055T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH110N15T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH110N25T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
Features of semiconductor devices: thrench gate power mosfet
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Lieferzeit 14-21 Tag (e)
| IXFA110N15T2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Case: TO263
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Case: TO263
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH110N10P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
| DSB60C30PB |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 530A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 530A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
| DSB60C60PB |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Max. forward impulse current: 490A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Max. forward impulse current: 490A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
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| DSB60C30HB |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 570A
Power dissipation: 130W
Case: TO247-3
Kind of package: tube
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 570A
Power dissipation: 130W
Case: TO247-3
Kind of package: tube
Semiconductor structure: common cathode; double
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Im Einkaufswagen
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| DSB60C45HB |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.58V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.58V
Max. forward impulse current: 570A
Power dissipation: 130W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.58V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.58V
Max. forward impulse current: 570A
Power dissipation: 130W
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| DSB60C45PB |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.6V
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.6V
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXYP8N90C3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector current: 8A
Mounting: THT
Collector-emitter voltage: 900V
Power dissipation: 125W
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Type of transistor: IGBT
Turn-on time: 39ns
Kind of package: tube
Case: TO220-3
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector current: 8A
Mounting: THT
Collector-emitter voltage: 900V
Power dissipation: 125W
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Type of transistor: IGBT
Turn-on time: 39ns
Kind of package: tube
Case: TO220-3
Turn-off time: 238ns
Gate-emitter voltage: ±20V
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYP8N90C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector current: 8A
Mounting: THT
Collector-emitter voltage: 900V
Power dissipation: 125W
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Type of transistor: IGBT
Turn-on time: 39ns
Kind of package: tube
Case: TO220-3
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector current: 8A
Mounting: THT
Collector-emitter voltage: 900V
Power dissipation: 125W
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Type of transistor: IGBT
Turn-on time: 39ns
Kind of package: tube
Case: TO220-3
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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Stück im Wert von UAH
| IXBOD2-56R |
|
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; 2nd Gen; 5.6kV; bulk
Mounting: THT
Type of thyristor: BOD x4
Case: BOD
Max. load current: 0.9A
Breakover voltage: 5.6kV
Technology: 2nd Gen
Kind of package: bulk
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; 2nd Gen; 5.6kV; bulk
Mounting: THT
Type of thyristor: BOD x4
Case: BOD
Max. load current: 0.9A
Breakover voltage: 5.6kV
Technology: 2nd Gen
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXFH120N25X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH120N20P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Technology: HiPerFET™; Polar™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Technology: HiPerFET™; Polar™
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH120N15P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEI120-12A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; Ifsm: 540A; TO247-2; tube; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 540A
Max. forward voltage: 1.55V
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Load current: 109A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 40ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; Ifsm: 540A; TO247-2; tube; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 540A
Max. forward voltage: 1.55V
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Load current: 109A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 40ns
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEI120-12AZ-TUB |
|
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AA; Ufmax: 1.55V
Power dissipation: 357W
Case: TO268AA
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 540A
Max. forward voltage: 1.55V
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Load current: 109A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 40ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AA; Ufmax: 1.55V
Power dissipation: 357W
Case: TO268AA
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 540A
Max. forward voltage: 1.55V
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Load current: 109A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 40ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEI12-12A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEI12-12AZ-TRL |
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 50ns; D2PAK,TO263AB; Ufmax: 2.6V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 2.6V
Max. forward impulse current: 75A
Technology: FRED
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 50ns; D2PAK,TO263AB; Ufmax: 2.6V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 2.6V
Max. forward impulse current: 75A
Technology: FRED
Kind of package: reel; tape
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Mindestbestellmenge: 800 Stücke
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| DSEI12-12AZ-TUB |
|
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
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| IXTA100N04T2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO263
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 34ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO263
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 34ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXA30RG1200DHGLB |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Max. off-state voltage: 1.2kV
Electrical mounting: SMT
Case: SMPD-B
Type of semiconductor module: IGBT
Power dissipation: 147W
Technology: ISOPLUS™; Sonic FRD™
Pulsed collector current: 75A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Topology: boost chopper
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Max. off-state voltage: 1.2kV
Electrical mounting: SMT
Case: SMPD-B
Type of semiconductor module: IGBT
Power dissipation: 147W
Technology: ISOPLUS™; Sonic FRD™
Pulsed collector current: 75A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Topology: boost chopper
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
| IXA20PG1200DHGLB |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 23A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 130W
Technology: ISOPLUS™; Sonic FRD™
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 23A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 130W
Technology: ISOPLUS™; Sonic FRD™
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
| CLA30E1200HB |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 28mA; TO247AD; THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 0.3kA
Case: TO247AD
Gate current: 28mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: THT
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 28mA; TO247AD; THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 0.3kA
Case: TO247AD
Gate current: 28mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: THT
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
| DCG10P1200HR |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 12.5A; ISO247™; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12.5A
Semiconductor structure: double series
Case: ISO247™
Max. forward voltage: 2.2V
Max. forward impulse current: 750A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 12.5A; ISO247™; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12.5A
Semiconductor structure: double series
Case: ISO247™
Max. forward voltage: 2.2V
Max. forward impulse current: 750A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| DCG17P1200HR |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18A; ISO247™; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: double series
Case: ISO247™
Max. forward voltage: 2.2V
Max. forward impulse current: 1kA
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18A; ISO247™; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: double series
Case: ISO247™
Max. forward voltage: 2.2V
Max. forward impulse current: 1kA
Kind of package: tube
Features of semiconductor devices: ultrafast switching
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFN100N50P |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 75A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 250A
Power dissipation: 1.04kW
Technology: HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate charge: 240nC
Category: Transistor modules
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 75A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 250A
Power dissipation: 1.04kW
Technology: HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate charge: 240nC
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1973Y |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Operating temperature: -40...85°C
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 5ms
Switched voltage: max. 400V AC
Case: SIP4
Max. operating current: 0.35mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 5Ω
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Operating temperature: -40...85°C
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 5ms
Switched voltage: max. 400V AC
Case: SIP4
Max. operating current: 0.35mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 5Ω
Type of relay: solid state
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)