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IXTP32P05T IXTP32P05T IXYS IXT_32P05T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
On-state resistance: 39mΩ
Reverse recovery time: 26ns
Mounting: THT
Power dissipation: 83W
Gate charge: 46nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -32A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO220AB
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IXKK85N60C IXKK85N60C IXYS IXKK85N60C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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CPC1130N CPC1130N IXYS CPC1130N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 350V AC; max. 350V DC
Case: SOP4
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 30Ω
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IXFH88N30P IXFH88N30P IXYS IXFH(K,T)88N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 40mΩ
Drain current: 88A
Drain-source voltage: 300V
Power dissipation: 600W
Kind of channel: enhancement
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IXFK150N30P3 IXFK150N30P3 IXYS IXFK(X)150N30P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Case: TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 197nC
On-state resistance: 19mΩ
Drain current: 150A
Drain-source voltage: 300V
Mounting: THT
Power dissipation: 1.3kW
Kind of package: tube
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IXFK88N30P IXFK88N30P IXYS IXFH(K,T)88N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 40mΩ
Drain current: 88A
Drain-source voltage: 300V
Power dissipation: 600W
Kind of channel: enhancement
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IXFK140N30P IXFK140N30P IXYS IXFK140N30P_IXFX140N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Gate charge: 185nC
On-state resistance: 24mΩ
Polarisation: unipolar
Kind of package: tube
Gate-source voltage: ±20V
Drain current: 140A
Type of transistor: N-MOSFET
Case: TO264
Drain-source voltage: 300V
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
Kind of channel: enhancement
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IXFT120N30X3HV IXFT120N30X3HV IXYS IXF_120N30X3_HV.pdf 300VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Mounting: SMD
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO268
Polarisation: unipolar
Reverse recovery time: 145ns
Gate charge: 170nC
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 735W
Kind of package: tube
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IXFB170N30P IXFB170N30P IXYS IXFB170N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 170A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 258nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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IXTK140N30P IXTK140N30P IXYS IXTK140N30P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Gate charge: 185nC
On-state resistance: 0.24Ω
Polarisation: unipolar
Kind of package: tube
Gate-source voltage: ±20V
Drain current: 140A
Type of transistor: N-MOSFET
Case: TO264
Drain-source voltage: 300V
Power dissipation: 1.04kW
Technology: Polar™
Reverse recovery time: 250ns
Kind of channel: enhancement
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IXFK140N25T IXFK140N25T IXYS IXFK(X)140N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 17mΩ
Drain-source voltage: 250V
Power dissipation: 960W
Drain current: 140A
Kind of package: tube
Case: TO264
Kind of channel: enhancement
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IXYK140N120A4 IXYS IXYK140N120A4_DS.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 1.5kW; TO264
Type of transistor: IGBT
Power dissipation: 1.5kW
Case: TO264
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 1.2kA
Collector-emitter voltage: 1.2kV
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IXYK140N90C3 IXYK140N90C3 IXYS IXYK(X)140N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Turn-on time: 122ns
Gate charge: 330nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 140A
Power dissipation: 1.63kW
Pulsed collector current: 840A
Collector-emitter voltage: 900V
Kind of package: tube
Case: TO264
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IXFH12N100P IXFH12N100P IXYS IXFH12N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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IXTH12N100L IXTH12N100L IXYS IXTH12N100L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
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CPC3703CTR CPC3703CTR IXYS CPC3703.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT89
On-state resistance: 4Ω
Drain current: 0.36A
Power dissipation: 1.1W
Gate-source voltage: ±15V
Drain-source voltage: 250V
Polarisation: unipolar
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DSEK60-02A DSEK60-02A IXYS 238_L124.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-3
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
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DSEK60-02AR DSEK60-02AR IXYS 238_L124.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: ISOPLUS247™
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
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DNA30E2200PA DNA30E2200PA IXYS DNA30E2200PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Mounting: THT
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Power dissipation: 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Type of diode: rectifying
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DNA30E2200FE DNA30E2200FE IXYS media?resourcetype=datasheets&itemid=b450a78f-15ed-4d9b-87fd-45be0f83674f&filename=Littelfuse-Power-Semiconductors-DNA30E2200FE-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; Ufmax: 1.22V
Mounting: THT
Max. forward impulse current: 370A
Max. forward voltage: 1.22V
Power dissipation: 110W
Features of semiconductor devices: high voltage
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: ISOPLUS i4-pac™ x024e
Type of diode: rectifying
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IXDI614SITR IXYS littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SOIC8; 14A; Ch: 1; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SOIC8
Output current: 14A
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 18ns
Application: automotive industry
Maximum output current: 14A
Supply voltage: 4.5...35V
Kind of output: N-Channel
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IXTP6N100D2 IXTP6N100D2 IXYS IXTA(H,P)6N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
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IXFR26N100P IXFR26N100P IXYS IXFR26N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 197nC
On-state resistance: 0.43Ω
Drain current: 15A
Power dissipation: 290W
Drain-source voltage: 1kV
Polarisation: unipolar
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IXTP1R6N100D2 IXTP1R6N100D2 IXYS IXTA(P,Y)1R6N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Mounting: THT
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
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IXTA6N100D2 IXTA6N100D2 IXYS IXTA(H,P)6N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO263; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
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IXTH6N100D2 IXTH6N100D2 IXYS IXTA(H,P)6N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO247-3; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
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IXFN36N100 IXFN36N100 IXYS IXFN36N100.pdf description Category: Transistor drivers
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Kind of channel: enhancement
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 180ns
Gate charge: 380nC
Mechanical mounting: screw
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IXFK26N100P IXFK26N100P IXYS IXFK26N100P_IXFX26N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Gate charge: 197nC
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IXFX26N100P IXFX26N100P IXYS IXFK26N100P_IXFX26N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 197nC
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IXTY1R6N100D2 IXTY1R6N100D2 IXYS IXTA(P,Y)1R6N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Mounting: SMD
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Case: TO252
Kind of package: tube
Polarisation: unipolar
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IXTA1R6N100D2 IXTA1R6N100D2 IXYS IXTA(P,Y)1R6N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Mounting: SMD
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Case: TO263
Kind of package: tube
Polarisation: unipolar
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IXTA1R6N100D2HV IXTA1R6N100D2HV IXYS IXTA1R6N100D2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Reverse recovery time: 970ns
Gate charge: 27nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: Polar™
Case: TO263
Kind of package: tube
Polarisation: unipolar
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CPC1117NTR CPC1117NTR IXYS CPC1117N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1125N CPC1125N IXYS CPC1125N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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CPC1125NTR CPC1125NTR IXYS CPC1125N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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CPC1014NTR CPC1014NTR IXYS CPC1014N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Operating temperature: -40...85°C
Case: SOP4
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Kind of output: MOSFET
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.4A
Manufacturer series: OptoMOS
On-state resistance: 2Ω
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
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IXTY44N10T IXTY44N10T IXYS IXTP(Y)44N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO252
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
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MCC72-08io1B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCC72-08io8B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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DSEI2X121-02A DSEI2X121-02A IXYS DSEI2x121-02A.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Case: SOT227B
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.1V
Max. off-state voltage: 200V
Max. forward impulse current: 1.3kA
Load current: 123A x2
Max. load current: 246A
Semiconductor structure: double independent
Type of semiconductor module: diode
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CPC1130NTR CPC1130NTR IXYS CPC1130N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1114N CPC1114N IXYS CPC1114N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1150NTR CPC1150NTR IXYS CPC1150N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1114NTR CPC1114NTR IXYS CPC1114N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CS45-16IO1 CS45-16IO1 IXYS CS45-08IO1-DTE.pdf CS45-16IO1.pdf description Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
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12+7.12 EUR
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CS45-16IO1R CS45-16IO1R IXYS CS45-16io1R.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
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CS45-12IO1 CS45-12IO1 IXYS CS45-08IO1-DTE.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 80mA
Max. off-state voltage: 1.2kV
Load current: 45A
Max. load current: 71A
Max. forward impulse current: 520A
Type of thyristor: thyristor
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30+6.01 EUR
60+5.65 EUR
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IXTP100N04T2 IXTP100N04T2 IXYS IXTA(P)100N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
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IXTP48P05T IXTP48P05T IXYS IXT_48P05T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Gate-source voltage: ±15V
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Power dissipation: 150W
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IXTY48P05T IXTY48P05T IXYS IXT_48P05T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Gate-source voltage: ±15V
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Power dissipation: 150W
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IXTA48P05T IXTA48P05T IXYS IXT_48P05T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Gate-source voltage: ±15V
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Power dissipation: 150W
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IXTA48P05T-TRL IXYS littelfuse-discrete-mosfets-ixt-4n80p-datasheet?assetguid=595aff53-2a35-43a0-b191-4cbac9044a16 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Drain current: 48A
Gate-source voltage: 15V
On-state resistance: 30mΩ
Power dissipation: 150W
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IXTY48P05T-TRL IXYS littelfusediscretemosfetspchannelixt48p05td.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; DPAK,TO252AA
Case: DPAK; TO252AA
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Drain current: 48A
Gate-source voltage: 15V
On-state resistance: 30mΩ
Power dissipation: 150W
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NCD2400MTR IXYS NCD2400M.pdf Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Type of integrated circuit: digital capacitor
Interface: 2-wire; I2C
Kind of memory: EEPROM; non-volatile
Case: DFN6
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.5...5.5V
Kind of package: reel; tape
Application: for OCXO application
Capacitance: 1.7...203pF
Number of positions: 512
Integrated circuit features: programmable
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CPC3720CTR CPC3720CTR IXYS CPC3720.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Kind of channel: depletion
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Power dissipation: 1.4W
Drain current: 0.13A
Gate-source voltage: ±15V
On-state resistance: 22Ω
Drain-source voltage: 350V
Kind of package: reel; tape
auf Bestellung 376 Stücke:
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199+0.43 EUR
226+0.38 EUR
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MCC95-16io1B MCC95-16io1B IXYS MCC95-16io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 116A; TO240AA; Ufmax: 1.5V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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IX2127N IX2127N IXYS IX2127.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Mounting: SMD
Type of integrated circuit: driver
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Voltage class: 600V
Kind of integrated circuit: gate driver; high-side
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LF2181NTR LF2181NTR IXYS LF2181NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Mounting: SMD
Type of integrated circuit: driver
Case: SO8
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Kind of integrated circuit: gate driver; high-/low-side
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DH20-18A DH20-18A IXYS DH20-18A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 20A; tube; Ifsm: 150A; TO247-2; 140W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 150A
Kind of package: tube
Features of semiconductor devices: fast switching
Reverse recovery time: 300ns
Max. forward voltage: 2.35V
Power dissipation: 140W
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17+5.26 EUR
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IXDH20N120 IXDH20N120 IXYS IXDH20N120_IXDH20N120D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 175ns
Turn-off time: 570ns
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IXTP32P05T IXT_32P05T.pdf
IXTP32P05T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
On-state resistance: 39mΩ
Reverse recovery time: 26ns
Mounting: THT
Power dissipation: 83W
Gate charge: 46nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -32A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO220AB
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IXKK85N60C IXKK85N60C.pdf
IXKK85N60C
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
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CPC1130N CPC1130N.pdf
CPC1130N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 350V AC; max. 350V DC
Case: SOP4
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 30Ω
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IXFH88N30P IXFH(K,T)88N30P.pdf
IXFH88N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 40mΩ
Drain current: 88A
Drain-source voltage: 300V
Power dissipation: 600W
Kind of channel: enhancement
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6+14.91 EUR
10+14.4 EUR
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IXFK150N30P3 IXFK(X)150N30P3.pdf
IXFK150N30P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Case: TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 197nC
On-state resistance: 19mΩ
Drain current: 150A
Drain-source voltage: 300V
Mounting: THT
Power dissipation: 1.3kW
Kind of package: tube
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IXFK88N30P IXFH(K,T)88N30P.pdf
IXFK88N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 40mΩ
Drain current: 88A
Drain-source voltage: 300V
Power dissipation: 600W
Kind of channel: enhancement
auf Bestellung 1 Stücke:
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IXFK140N30P IXFK140N30P_IXFX140N30P.pdf
IXFK140N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Gate charge: 185nC
On-state resistance: 24mΩ
Polarisation: unipolar
Kind of package: tube
Gate-source voltage: ±20V
Drain current: 140A
Type of transistor: N-MOSFET
Case: TO264
Drain-source voltage: 300V
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
Kind of channel: enhancement
auf Bestellung 56 Stücke:
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3+30.55 EUR
5+28.14 EUR
10+26.05 EUR
25+22.82 EUR
50+22.59 EUR
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IXFT120N30X3HV IXF_120N30X3_HV.pdf 300VProductBrief.pdf
IXFT120N30X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Mounting: SMD
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO268
Polarisation: unipolar
Reverse recovery time: 145ns
Gate charge: 170nC
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 735W
Kind of package: tube
auf Bestellung 12 Stücke:
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4+22.35 EUR
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IXFB170N30P IXFB170N30P.pdf
IXFB170N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 170A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 258nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 3 Stücke:
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AnzahlPrivatkunde
3+29 EUR
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IXTK140N30P IXTK140N30P-DTE.pdf
IXTK140N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Gate charge: 185nC
On-state resistance: 0.24Ω
Polarisation: unipolar
Kind of package: tube
Gate-source voltage: ±20V
Drain current: 140A
Type of transistor: N-MOSFET
Case: TO264
Drain-source voltage: 300V
Power dissipation: 1.04kW
Technology: Polar™
Reverse recovery time: 250ns
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK140N25T IXFK(X)140N25T.pdf
IXFK140N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 17mΩ
Drain-source voltage: 250V
Power dissipation: 960W
Drain current: 140A
Kind of package: tube
Case: TO264
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXYK140N120A4 IXYK140N120A4_DS.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 1.5kW; TO264
Type of transistor: IGBT
Power dissipation: 1.5kW
Case: TO264
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 1.2kA
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXYK140N90C3 IXYK(X)140N90C3.pdf
IXYK140N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Turn-on time: 122ns
Gate charge: 330nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 140A
Power dissipation: 1.63kW
Pulsed collector current: 840A
Collector-emitter voltage: 900V
Kind of package: tube
Case: TO264
Produkt ist nicht verfügbar
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IXFH12N100P IXFH12N100P.pdf
IXFH12N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 263 Stücke:
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7+12.42 EUR
8+11.16 EUR
9+10.36 EUR
10+9.19 EUR
30+8.97 EUR
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IXTH12N100L IXTH12N100L.pdf
IXTH12N100L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
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CPC3703CTR CPC3703.pdf
CPC3703CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT89
On-state resistance: 4Ω
Drain current: 0.36A
Power dissipation: 1.1W
Gate-source voltage: ±15V
Drain-source voltage: 250V
Polarisation: unipolar
auf Bestellung 1478 Stücke:
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53+1.63 EUR
83+1.04 EUR
125+0.68 EUR
250+0.6 EUR
500+0.58 EUR
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DSEK60-02A 238_L124.pdf
DSEK60-02A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-3
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 288 Stücke:
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13+7.01 EUR
14+6.2 EUR
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DSEK60-02AR 238_L124.pdf
DSEK60-02AR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: ISOPLUS247™
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Produkt ist nicht verfügbar
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DNA30E2200PA DNA30E2200PA.pdf
DNA30E2200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Mounting: THT
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Power dissipation: 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Type of diode: rectifying
auf Bestellung 294 Stücke:
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15+5.7 EUR
16+5.38 EUR
17+5.06 EUR
25+4.36 EUR
50+3.99 EUR
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DNA30E2200FE media?resourcetype=datasheets&itemid=b450a78f-15ed-4d9b-87fd-45be0f83674f&filename=Littelfuse-Power-Semiconductors-DNA30E2200FE-Datasheet
DNA30E2200FE
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; Ufmax: 1.22V
Mounting: THT
Max. forward impulse current: 370A
Max. forward voltage: 1.22V
Power dissipation: 110W
Features of semiconductor devices: high voltage
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: ISOPLUS i4-pac™ x024e
Type of diode: rectifying
auf Bestellung 226 Stücke:
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8+10.72 EUR
10+8.78 EUR
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IXDI614SITR littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SOIC8; 14A; Ch: 1; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SOIC8
Output current: 14A
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 18ns
Application: automotive industry
Maximum output current: 14A
Supply voltage: 4.5...35V
Kind of output: N-Channel
Produkt ist nicht verfügbar
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IXTP6N100D2 IXTA(H,P)6N100D2.pdf
IXTP6N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
auf Bestellung 350 Stücke:
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7+12.38 EUR
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IXFR26N100P IXFR26N100P.pdf
IXFR26N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 197nC
On-state resistance: 0.43Ω
Drain current: 15A
Power dissipation: 290W
Drain-source voltage: 1kV
Polarisation: unipolar
auf Bestellung 6 Stücke:
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2+61.39 EUR
3+55.25 EUR
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IXTP1R6N100D2 IXTA(P,Y)1R6N100D2.pdf
IXTP1R6N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Mounting: THT
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
auf Bestellung 280 Stücke:
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17+5.24 EUR
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50+3.36 EUR
100+2.98 EUR
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IXTA6N100D2 IXTA(H,P)6N100D2.pdf
IXTA6N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO263; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
Produkt ist nicht verfügbar
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IXTH6N100D2 IXTA(H,P)6N100D2.pdf
IXTH6N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO247-3; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
Produkt ist nicht verfügbar
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IXFN36N100 description IXFN36N100.pdf
IXFN36N100
Hersteller: IXYS
Category: Transistor drivers
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Kind of channel: enhancement
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 180ns
Gate charge: 380nC
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFK26N100P IXFK26N100P_IXFX26N100P.pdf
IXFK26N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Gate charge: 197nC
Produkt ist nicht verfügbar
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IXFX26N100P IXFK26N100P_IXFX26N100P.pdf
IXFX26N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 197nC
Produkt ist nicht verfügbar
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IXTY1R6N100D2 IXTA(P,Y)1R6N100D2.pdf
IXTY1R6N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Mounting: SMD
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Case: TO252
Kind of package: tube
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXTA1R6N100D2 IXTA(P,Y)1R6N100D2.pdf
IXTA1R6N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Mounting: SMD
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Case: TO263
Kind of package: tube
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXTA1R6N100D2HV IXTA1R6N100D2HV.pdf
IXTA1R6N100D2HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Reverse recovery time: 970ns
Gate charge: 27nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: Polar™
Case: TO263
Kind of package: tube
Polarisation: unipolar
Produkt ist nicht verfügbar
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CPC1117NTR CPC1117N.pdf
CPC1117NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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CPC1125N CPC1125N.pdf
CPC1125N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1125NTR CPC1125N.pdf
CPC1125NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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CPC1014NTR CPC1014N.pdf
CPC1014NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Operating temperature: -40...85°C
Case: SOP4
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Kind of output: MOSFET
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.4A
Manufacturer series: OptoMOS
On-state resistance: 2Ω
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IXTY44N10T IXTP(Y)44N10T.pdf
IXTY44N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO252
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
auf Bestellung 423 Stücke:
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21+4.11 EUR
26+3.28 EUR
34+2.55 EUR
50+2.06 EUR
70+1.94 EUR
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MCC72-08io1B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCC72-08io8B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DSEI2X121-02A DSEI2x121-02A.pdf
DSEI2X121-02A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Case: SOT227B
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.1V
Max. off-state voltage: 200V
Max. forward impulse current: 1.3kA
Load current: 123A x2
Max. load current: 246A
Semiconductor structure: double independent
Type of semiconductor module: diode
auf Bestellung 120 Stücke:
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2+46.22 EUR
5+43.13 EUR
10+39.5 EUR
20+38.53 EUR
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CPC1130NTR CPC1130N.pdf
CPC1130NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1114N CPC1114N.pdf
CPC1114N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1150NTR CPC1150N.pdf
CPC1150NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1114NTR CPC1114N.pdf
CPC1114NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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CS45-16IO1 description CS45-08IO1-DTE.pdf CS45-16IO1.pdf
CS45-16IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.12 EUR
15+6.72 EUR
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CS45-16IO1R CS45-16io1R.pdf
CS45-16IO1R
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+13.63 EUR
9+10.6 EUR
10+8.83 EUR
30+7.96 EUR
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CS45-12IO1 CS45-08IO1-DTE.pdf
CS45-12IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 80mA
Max. off-state voltage: 1.2kV
Load current: 45A
Max. load current: 71A
Max. forward impulse current: 520A
Type of thyristor: thyristor
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+9.06 EUR
11+7.75 EUR
13+7.04 EUR
30+6.01 EUR
60+5.65 EUR
Mindestbestellmenge: 10 Stücke
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IXTP100N04T2 IXTA(P)100N04T2.pdf
IXTP100N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
auf Bestellung 300 Stücke:
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24+3.59 EUR
38+2.25 EUR
50+1.98 EUR
100+1.9 EUR
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IXTP48P05T IXT_48P05T.pdf
IXTP48P05T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Gate-source voltage: ±15V
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Power dissipation: 150W
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)
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15+5.69 EUR
20+4.38 EUR
50+3.71 EUR
100+3.59 EUR
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IXTY48P05T IXT_48P05T.pdf
IXTY48P05T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Gate-source voltage: ±15V
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Power dissipation: 150W
Produkt ist nicht verfügbar
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IXTA48P05T IXT_48P05T.pdf
IXTA48P05T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Gate-source voltage: ±15V
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Power dissipation: 150W
Produkt ist nicht verfügbar
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IXTA48P05T-TRL littelfuse-discrete-mosfets-ixt-4n80p-datasheet?assetguid=595aff53-2a35-43a0-b191-4cbac9044a16
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Drain current: 48A
Gate-source voltage: 15V
On-state resistance: 30mΩ
Power dissipation: 150W
Produkt ist nicht verfügbar
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IXTY48P05T-TRL littelfusediscretemosfetspchannelixt48p05td.pdf
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; DPAK,TO252AA
Case: DPAK; TO252AA
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Drain current: 48A
Gate-source voltage: 15V
On-state resistance: 30mΩ
Power dissipation: 150W
Produkt ist nicht verfügbar
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NCD2400MTR NCD2400M.pdf
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Type of integrated circuit: digital capacitor
Interface: 2-wire; I2C
Kind of memory: EEPROM; non-volatile
Case: DFN6
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.5...5.5V
Kind of package: reel; tape
Application: for OCXO application
Capacitance: 1.7...203pF
Number of positions: 512
Integrated circuit features: programmable
Produkt ist nicht verfügbar
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CPC3720CTR CPC3720.pdf
CPC3720CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Kind of channel: depletion
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Power dissipation: 1.4W
Drain current: 0.13A
Gate-source voltage: ±15V
On-state resistance: 22Ω
Drain-source voltage: 350V
Kind of package: reel; tape
auf Bestellung 376 Stücke:
Lieferzeit 14-21 Tag (e)
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103+0.83 EUR
182+0.46 EUR
199+0.43 EUR
226+0.38 EUR
250+0.35 EUR
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MCC95-16io1B MCC95-16io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC95-16io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 116A; TO240AA; Ufmax: 1.5V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 25 Stücke:
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AnzahlPrivatkunde
2+51.18 EUR
5+51 EUR
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IX2127N IX2127.pdf
IX2127N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Mounting: SMD
Type of integrated circuit: driver
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Voltage class: 600V
Kind of integrated circuit: gate driver; high-side
auf Bestellung 811 Stücke:
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82+1.04 EUR
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LF2181NTR LF2181NTR.pdf
LF2181NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Mounting: SMD
Type of integrated circuit: driver
Case: SO8
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
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DH20-18A DH20-18A.pdf
DH20-18A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 20A; tube; Ifsm: 150A; TO247-2; 140W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 150A
Kind of package: tube
Features of semiconductor devices: fast switching
Reverse recovery time: 300ns
Max. forward voltage: 2.35V
Power dissipation: 140W
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
11+7.93 EUR
17+5.26 EUR
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IXDH20N120 IXDH20N120_IXDH20N120D1.pdf
IXDH20N120
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 175ns
Turn-off time: 570ns
auf Bestellung 192 Stücke:
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9+9.58 EUR
10+8.63 EUR
12+7.63 EUR
30+6.84 EUR
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