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IXFH12N100P IXFH12N100P IXYS IXFH12N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 263 Stücke:
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8+11.16 EUR
9+10.36 EUR
10+9.19 EUR
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IXTH12N100L IXTH12N100L IXYS IXTH12N100L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
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CPC3703CTR CPC3703CTR IXYS CPC3703.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT89
On-state resistance: 4Ω
Drain current: 0.36A
Power dissipation: 1.1W
Gate-source voltage: ±15V
Drain-source voltage: 250V
Polarisation: unipolar
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250+0.6 EUR
500+0.58 EUR
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DSEK60-02A DSEK60-02A IXYS 238_L124.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-3
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
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DSEK60-02AR DSEK60-02AR IXYS 238_L124.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: ISOPLUS247™
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
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DNA30E2200PA DNA30E2200PA IXYS DNA30E2200PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Mounting: THT
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Power dissipation: 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Type of diode: rectifying
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17+5.06 EUR
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DNA30E2200FE DNA30E2200FE IXYS media?resourcetype=datasheets&itemid=b450a78f-15ed-4d9b-87fd-45be0f83674f&filename=Littelfuse-Power-Semiconductors-DNA30E2200FE-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; Ufmax: 1.22V
Mounting: THT
Max. forward impulse current: 370A
Max. forward voltage: 1.22V
Power dissipation: 110W
Features of semiconductor devices: high voltage
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: ISOPLUS i4-pac™ x024e
Type of diode: rectifying
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10+8.78 EUR
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IXDI614SITR IXYS littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SOIC8; 14A; Ch: 1; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SOIC8
Output current: 14A
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 18ns
Application: automotive industry
Maximum output current: 14A
Supply voltage: 4.5...35V
Kind of output: N-Channel
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IXFR26N100P IXFR26N100P IXYS IXFR26N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 197nC
On-state resistance: 0.43Ω
Drain current: 15A
Power dissipation: 290W
Drain-source voltage: 1kV
Polarisation: unipolar
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IXTP1R6N100D2 IXTP1R6N100D2 IXYS IXTA(P,Y)1R6N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Mounting: THT
Drain current: 1.6A
Kind of channel: depletion
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 10Ω
Reverse recovery time: 11ns
Power dissipation: 100W
Gate charge: 645nC
Polarisation: unipolar
auf Bestellung 280 Stücke:
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IXTY1R6N100D2 IXTY1R6N100D2 IXYS IXTA(P,Y)1R6N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Mounting: SMD
Drain current: 1.6A
Kind of channel: depletion
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO252
On-state resistance: 10Ω
Reverse recovery time: 11ns
Power dissipation: 100W
Gate charge: 645nC
Polarisation: unipolar
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IXTA1R6N100D2 IXTA1R6N100D2 IXYS IXTA(P,Y)1R6N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Mounting: SMD
Drain current: 1.6A
Kind of channel: depletion
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 10Ω
Reverse recovery time: 11ns
Power dissipation: 100W
Gate charge: 645nC
Polarisation: unipolar
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IXTA1R6N100D2HV IXTA1R6N100D2HV IXYS IXTA1R6N100D2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Technology: Polar™
Drain current: 1.6A
Kind of channel: depletion
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 10Ω
Reverse recovery time: 970ns
Power dissipation: 100W
Gate charge: 27nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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CPC1117NTR CPC1117NTR IXYS CPC1117N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1014NTR CPC1014NTR IXYS CPC1014N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SOP4
Max. operating current: 0.4A
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 2Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
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IXTY44N10T IXTY44N10T IXYS IXTP(Y)44N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO252
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
auf Bestellung 423 Stücke:
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MCC72-08io1B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCC72-08io8B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DSEI2X121-02A DSEI2X121-02A IXYS DSEI2x121-02A.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Case: SOT227B
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.1V
Max. off-state voltage: 200V
Max. forward impulse current: 1.3kA
Load current: 123A x2
Max. load current: 246A
Semiconductor structure: double independent
Type of semiconductor module: diode
auf Bestellung 120 Stücke:
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CPC1130NTR CPC1130NTR IXYS CPC1130N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1114N CPC1114N IXYS CPC1114N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-on time: 2ms
Case: SOP4
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 2Ω
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NC
Insulation voltage: 1.5kV
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CPC1114NTR CPC1114NTR IXYS CPC1114N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CS45-16IO1 CS45-16IO1 IXYS CS45-08IO1-DTE.pdf CS45-16IO1.pdf description Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
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CS45-16IO1R CS45-16IO1R IXYS CS45-16io1R.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
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CS45-12IO1 CS45-12IO1 IXYS CS45-08IO1-DTE.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 45A
Case: TO247AD
Mounting: THT
Max. load current: 71A
Max. forward impulse current: 520A
Kind of package: tube
Gate current: 80mA
Type of thyristor: thyristor
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IXTP100N04T2 IXTP100N04T2 IXYS IXTA(P)100N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
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IXTP48P05T IXTP48P05T IXYS IXT_48P05T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Gate-source voltage: ±15V
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Power dissipation: 150W
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IXTY48P05T IXTY48P05T IXYS IXT_48P05T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Gate-source voltage: ±15V
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Power dissipation: 150W
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IXTA48P05T IXTA48P05T IXYS IXT_48P05T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Gate-source voltage: ±15V
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Power dissipation: 150W
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IXTA48P05T-TRL IXYS littelfuse-discrete-mosfets-ixt-4n80p-datasheet?assetguid=595aff53-2a35-43a0-b191-4cbac9044a16 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Drain current: 48A
Gate-source voltage: 15V
On-state resistance: 30mΩ
Power dissipation: 150W
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IXTY48P05T-TRL IXYS littelfusediscretemosfetspchannelixt48p05td.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; DPAK,TO252AA
Case: DPAK; TO252AA
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Drain current: 48A
Gate-source voltage: 15V
On-state resistance: 30mΩ
Power dissipation: 150W
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NCD2400MTR IXYS NCD2400M.pdf Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Type of integrated circuit: digital capacitor
Interface: 2-wire; I2C
Kind of memory: EEPROM; non-volatile
Case: DFN6
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.5...5.5V
Kind of package: reel; tape
Application: for OCXO application
Capacitance: 1.7...203pF
Number of positions: 512
Integrated circuit features: programmable
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IXDH20N120 IXDH20N120 IXYS IXDH20N120_IXDH20N120D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 175ns
Turn-off time: 570ns
Gate-emitter voltage: ±20V
Collector current: 25A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 50A
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CPC1966Y CPC1966Y IXYS CPC1966.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 240V AC
Case: SIP4
Max. operating current: 3A
Control current max.: 50mA
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
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CPC1966YX6 CPC1966YX6 IXYS CPC1966YX6.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 500µs
Switching method: instantaneous switching
Switched voltage: max. 600V AC
Case: SIP4
Max. operating current: 3A
Control current max.: 50mA
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
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IXFH60N50P3 IXFH60N50P3 IXYS IXF_60N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Kind of package: tube
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CPC1906Y CPC1906Y IXYS CPC1906.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 10ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SIP4
Max. operating current: 2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.3Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
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MIXA10WB1200TEDMIXA10WB1200TED
MIXA10WB1200TEDMIXA10WB1200TED
 MIXA10WB1200TED IXYS MIXA10WB1200TED.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Power dissipation: 60W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 30A
Application: motors; photovoltaics
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 12A
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CLB30I1200HB CLB30I1200HB IXYS CLB30I1200HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 50mA
Max. off-state voltage: 1.2kV
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 325A
Type of thyristor: thyristor
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CLB30I1200PZ-TUB CLB30I1200PZ-TUB IXYS CLB30I1200PZ.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
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CLB30I1200PZ-TRL CLB30I1200PZ-TRL IXYS Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
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LBA110 LBA110 IXYS littelfuse-integrated-circuits-lba110-datasheet?assetguid=5197d7d9-edb1-4128-af0b-ede0a7f87ed0 description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LBA110S LBA110S IXYS LBA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LBA110L LBA110L IXYS LBA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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CPC1010N CPC1010N IXYS CPC1010N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 250V AC; max. 250V DC
Case: SOP4
Max. operating current: 0.17A
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 11.5Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
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CPC1010NTR CPC1010NTR IXYS CPC1010N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 250V AC; max. 250V DC
Case: SOP4
Max. operating current: 0.17A
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 11.5Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
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CPC1016NTR CPC1016NTR IXYS CPC1016N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 100V AC; max. 100V DC
Case: SOP4
Max. operating current: 0.1A
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 16Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
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CPC1019NTR CPC1019NTR IXYS CPC1019N.pdf Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 60V DC
Case: SOP4
Max. operating current: 750mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 0.6Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
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IXTQ200N10T IXTQ200N10T IXYS IXTH(Q)200N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Case: TO3P
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 76ns
On-state resistance: 5.5mΩ
Drain current: 200A
Drain-source voltage: 100V
Power dissipation: 550W
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXGP20N120B IXGP20N120B IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; TO220-3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Turn-off time: 150ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 100A
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IXXH80N65B4 IXXH80N65B4 IXYS IXXH80N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Mounting: THT
Collector-emitter voltage: 650V
Power dissipation: 625W
Gate charge: 0.12µC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 430A
Type of transistor: IGBT
Turn-on time: 125ns
Kind of package: tube
Case: TO247-3
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
auf Bestellung 246 Stücke:
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DPF80C200HB DPF80C200HB IXYS DPF80C200HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W
Kind of package: tube
Case: TO247-3
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 55ns
Max. forward voltage: 1.22V
Power dissipation: 215W
Load current: 40A x2
Max. off-state voltage: 200V
Max. forward impulse current: 560A
Semiconductor structure: common cathode; double
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IXFH110N25T IXFH110N25T IXYS IXFH110N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Case: TO247-3
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 157nC
On-state resistance: 26mΩ
Drain current: 110A
Drain-source voltage: 250V
Power dissipation: 694W
auf Bestellung 256 Stücke:
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IXTP110N055T2 IXTP110N055T2 IXYS IXTA(P)110N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
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IXFH110N15T2 IXFH110N15T2 IXYS IXFH110N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
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IXTH110N25T IXTH110N25T IXYS IXTH110N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Case: TO247-3
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 157nC
Reverse recovery time: 170ns
On-state resistance: 26mΩ
Drain current: 110A
Drain-source voltage: 250V
Power dissipation: 694W
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IXFA110N15T2 IXFA110N15T2 IXYS IXFA(P)110N15T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Case: TO263
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
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IXFH110N10P IXFH110N10P IXYS IXFH110N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 171 Stücke:
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DSB60C30PB DSB60C30PB IXYS DSB60C30PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 530A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
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DSB60C60PB DSB60C60PB IXYS DSB60C60PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Max. forward impulse current: 490A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
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IXFH12N100P IXFH12N100P.pdf
IXFH12N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 263 Stücke:
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7+12.42 EUR
8+11.16 EUR
9+10.36 EUR
10+9.19 EUR
30+8.97 EUR
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IXTH12N100L IXTH12N100L.pdf
IXTH12N100L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
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CPC3703CTR CPC3703.pdf
CPC3703CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT89
On-state resistance: 4Ω
Drain current: 0.36A
Power dissipation: 1.1W
Gate-source voltage: ±15V
Drain-source voltage: 250V
Polarisation: unipolar
auf Bestellung 1478 Stücke:
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AnzahlPrivatkunde
53+1.63 EUR
83+1.04 EUR
125+0.68 EUR
250+0.6 EUR
500+0.58 EUR
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DSEK60-02A 238_L124.pdf
DSEK60-02A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-3
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 288 Stücke:
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AnzahlPrivatkunde
13+7.01 EUR
14+6.2 EUR
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DSEK60-02AR 238_L124.pdf
DSEK60-02AR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: ISOPLUS247™
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Produkt ist nicht verfügbar
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DNA30E2200PA DNA30E2200PA.pdf
DNA30E2200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Mounting: THT
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Power dissipation: 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Type of diode: rectifying
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
15+5.7 EUR
16+5.38 EUR
17+5.06 EUR
25+4.36 EUR
50+3.99 EUR
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DNA30E2200FE media?resourcetype=datasheets&itemid=b450a78f-15ed-4d9b-87fd-45be0f83674f&filename=Littelfuse-Power-Semiconductors-DNA30E2200FE-Datasheet
DNA30E2200FE
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; Ufmax: 1.22V
Mounting: THT
Max. forward impulse current: 370A
Max. forward voltage: 1.22V
Power dissipation: 110W
Features of semiconductor devices: high voltage
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: ISOPLUS i4-pac™ x024e
Type of diode: rectifying
auf Bestellung 226 Stücke:
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AnzahlPrivatkunde
8+10.72 EUR
10+8.78 EUR
25+8.63 EUR
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IXDI614SITR littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SOIC8; 14A; Ch: 1; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SOIC8
Output current: 14A
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 18ns
Application: automotive industry
Maximum output current: 14A
Supply voltage: 4.5...35V
Kind of output: N-Channel
Produkt ist nicht verfügbar
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IXFR26N100P IXFR26N100P.pdf
IXFR26N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 197nC
On-state resistance: 0.43Ω
Drain current: 15A
Power dissipation: 290W
Drain-source voltage: 1kV
Polarisation: unipolar
auf Bestellung 6 Stücke:
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2+61.39 EUR
3+55.25 EUR
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IXTP1R6N100D2 IXTA(P,Y)1R6N100D2.pdf
IXTP1R6N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Mounting: THT
Drain current: 1.6A
Kind of channel: depletion
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 10Ω
Reverse recovery time: 11ns
Power dissipation: 100W
Gate charge: 645nC
Polarisation: unipolar
auf Bestellung 280 Stücke:
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17+5.24 EUR
19+4.59 EUR
50+3.36 EUR
100+2.98 EUR
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IXTY1R6N100D2 IXTA(P,Y)1R6N100D2.pdf
IXTY1R6N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Mounting: SMD
Drain current: 1.6A
Kind of channel: depletion
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO252
On-state resistance: 10Ω
Reverse recovery time: 11ns
Power dissipation: 100W
Gate charge: 645nC
Polarisation: unipolar
auf Bestellung 350 Stücke:
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15+6.02 EUR
16+5.39 EUR
18+4.91 EUR
25+4.16 EUR
70+3.44 EUR
140+3.39 EUR
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IXTA1R6N100D2 IXTA(P,Y)1R6N100D2.pdf
IXTA1R6N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Mounting: SMD
Drain current: 1.6A
Kind of channel: depletion
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 10Ω
Reverse recovery time: 11ns
Power dissipation: 100W
Gate charge: 645nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXTA1R6N100D2HV IXTA1R6N100D2HV.pdf
IXTA1R6N100D2HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Technology: Polar™
Drain current: 1.6A
Kind of channel: depletion
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 10Ω
Reverse recovery time: 970ns
Power dissipation: 100W
Gate charge: 27nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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CPC1117NTR CPC1117N.pdf
CPC1117NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1014NTR CPC1014N.pdf
CPC1014NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SOP4
Max. operating current: 0.4A
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 2Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IXTY44N10T IXTP(Y)44N10T.pdf
IXTY44N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO252
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
auf Bestellung 423 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
21+4.11 EUR
26+3.28 EUR
34+2.55 EUR
50+2.06 EUR
70+1.94 EUR
Mindestbestellmenge: 21 Stücke
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MCC72-08io1B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCC72-08io8B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DSEI2X121-02A DSEI2x121-02A.pdf
DSEI2X121-02A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Case: SOT227B
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.1V
Max. off-state voltage: 200V
Max. forward impulse current: 1.3kA
Load current: 123A x2
Max. load current: 246A
Semiconductor structure: double independent
Type of semiconductor module: diode
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+46.22 EUR
5+43.13 EUR
10+39.5 EUR
20+38.53 EUR
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CPC1130NTR CPC1130N.pdf
CPC1130NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1114N CPC1114N.pdf
CPC1114N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-on time: 2ms
Case: SOP4
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 2Ω
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NC
Insulation voltage: 1.5kV
auf Bestellung 840 Stücke:
Lieferzeit 14-21 Tag (e)
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23+3.81 EUR
26+3.39 EUR
100+2.98 EUR
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CPC1114NTR CPC1114N.pdf
CPC1114NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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CS45-16IO1 description CS45-08IO1-DTE.pdf CS45-16IO1.pdf
CS45-16IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.12 EUR
15+6.72 EUR
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CS45-16IO1R CS45-16io1R.pdf
CS45-16IO1R
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+13.63 EUR
9+10.6 EUR
10+8.83 EUR
30+7.96 EUR
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CS45-12IO1 CS45-08IO1-DTE.pdf
CS45-12IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 45A
Case: TO247AD
Mounting: THT
Max. load current: 71A
Max. forward impulse current: 520A
Kind of package: tube
Gate current: 80mA
Type of thyristor: thyristor
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
9+9.85 EUR
11+8.39 EUR
12+7.64 EUR
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IXTP100N04T2 IXTA(P)100N04T2.pdf
IXTP100N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
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24+3.59 EUR
38+2.25 EUR
50+1.98 EUR
100+1.9 EUR
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IXTP48P05T IXT_48P05T.pdf
IXTP48P05T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Gate-source voltage: ±15V
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Power dissipation: 150W
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
15+5.69 EUR
20+4.38 EUR
50+3.71 EUR
100+3.59 EUR
Mindestbestellmenge: 15 Stücke
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IXTY48P05T IXT_48P05T.pdf
IXTY48P05T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Gate-source voltage: ±15V
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Power dissipation: 150W
Produkt ist nicht verfügbar
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IXTA48P05T IXT_48P05T.pdf
IXTA48P05T
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Gate-source voltage: ±15V
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Power dissipation: 150W
Produkt ist nicht verfügbar
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IXTA48P05T-TRL littelfuse-discrete-mosfets-ixt-4n80p-datasheet?assetguid=595aff53-2a35-43a0-b191-4cbac9044a16
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Drain current: 48A
Gate-source voltage: 15V
On-state resistance: 30mΩ
Power dissipation: 150W
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IXTY48P05T-TRL littelfusediscretemosfetspchannelixt48p05td.pdf
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; DPAK,TO252AA
Case: DPAK; TO252AA
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Drain current: 48A
Gate-source voltage: 15V
On-state resistance: 30mΩ
Power dissipation: 150W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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NCD2400MTR NCD2400M.pdf
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Type of integrated circuit: digital capacitor
Interface: 2-wire; I2C
Kind of memory: EEPROM; non-volatile
Case: DFN6
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 2.5...5.5V
Kind of package: reel; tape
Application: for OCXO application
Capacitance: 1.7...203pF
Number of positions: 512
Integrated circuit features: programmable
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IXDH20N120 IXDH20N120_IXDH20N120D1.pdf
IXDH20N120
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 175ns
Turn-off time: 570ns
Gate-emitter voltage: ±20V
Collector current: 25A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 50A
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
9+9.58 EUR
10+8.63 EUR
12+7.63 EUR
30+6.84 EUR
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CPC1966Y CPC1966.pdf
CPC1966Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 240V AC
Case: SIP4
Max. operating current: 3A
Control current max.: 50mA
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Produkt ist nicht verfügbar
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CPC1966YX6 CPC1966YX6.pdf
CPC1966YX6
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 500µs
Switching method: instantaneous switching
Switched voltage: max. 600V AC
Case: SIP4
Max. operating current: 3A
Control current max.: 50mA
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Produkt ist nicht verfügbar
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IXFH60N50P3 IXF_60N50P3.pdf
IXFH60N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Kind of package: tube
auf Bestellung 128 Stücke:
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7+12.46 EUR
10+11.47 EUR
30+10.02 EUR
60+9.94 EUR
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CPC1906Y CPC1906.pdf
CPC1906Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 10ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SIP4
Max. operating current: 2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.3Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
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MIXA10WB1200TED MIXA10WB1200TED.pdf
MIXA10WB1200TEDMIXA10WB1200TED
MIXA10WB1200TEDMIXA10WB1200TED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Power dissipation: 60W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 30A
Application: motors; photovoltaics
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 12A
auf Bestellung 6 Stücke:
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CLB30I1200HB CLB30I1200HB.pdf
CLB30I1200HB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 50mA
Max. off-state voltage: 1.2kV
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 325A
Type of thyristor: thyristor
auf Bestellung 39 Stücke:
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17+5.03 EUR
19+4.52 EUR
30+4.36 EUR
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CLB30I1200PZ-TUB CLB30I1200PZ.pdf
CLB30I1200PZ-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
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22+4 EUR
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CLB30I1200PZ-TRL
CLB30I1200PZ-TRL
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
Produkt ist nicht verfügbar
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LBA110 description littelfuse-integrated-circuits-lba110-datasheet?assetguid=5197d7d9-edb1-4128-af0b-ede0a7f87ed0
LBA110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
auf Bestellung 175 Stücke:
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LBA110S LBA110.pdf
LBA110S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
auf Bestellung 227 Stücke:
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5+18.25 EUR
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LBA110L LBA110L.pdf
LBA110L
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
auf Bestellung 100 Stücke:
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7+14.16 EUR
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CPC1010N CPC1010N.pdf
CPC1010N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 250V AC; max. 250V DC
Case: SOP4
Max. operating current: 0.17A
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 11.5Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
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CPC1010NTR CPC1010N.pdf
CPC1010NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 250V AC; max. 250V DC
Case: SOP4
Max. operating current: 0.17A
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 11.5Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
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CPC1016NTR CPC1016N.pdf
CPC1016NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 100V AC; max. 100V DC
Case: SOP4
Max. operating current: 0.1A
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 16Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
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CPC1019NTR CPC1019N.pdf
CPC1019NTR
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 60V DC
Case: SOP4
Max. operating current: 750mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 0.6Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
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IXTQ200N10T IXTH(Q)200N10T.pdf
IXTQ200N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Case: TO3P
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 76ns
On-state resistance: 5.5mΩ
Drain current: 200A
Drain-source voltage: 100V
Power dissipation: 550W
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXGP20N120B
IXGP20N120B
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; TO220-3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Turn-off time: 150ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 100A
Produkt ist nicht verfügbar
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IXXH80N65B4 IXXH80N65B4.pdf
IXXH80N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Mounting: THT
Collector-emitter voltage: 650V
Power dissipation: 625W
Gate charge: 0.12µC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 430A
Type of transistor: IGBT
Turn-on time: 125ns
Kind of package: tube
Case: TO247-3
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
auf Bestellung 246 Stücke:
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7+13.26 EUR
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30+8.27 EUR
60+7.79 EUR
120+7.32 EUR
150+7.16 EUR
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DPF80C200HB DPF80C200HB.pdf
DPF80C200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W
Kind of package: tube
Case: TO247-3
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 55ns
Max. forward voltage: 1.22V
Power dissipation: 215W
Load current: 40A x2
Max. off-state voltage: 200V
Max. forward impulse current: 560A
Semiconductor structure: common cathode; double
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IXFH110N25T IXFH110N25T.pdf
IXFH110N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Case: TO247-3
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 157nC
On-state resistance: 26mΩ
Drain current: 110A
Drain-source voltage: 250V
Power dissipation: 694W
auf Bestellung 256 Stücke:
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7+13.84 EUR
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IXTP110N055T2 IXTA(P)110N055T2.pdf
IXTP110N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
auf Bestellung 278 Stücke:
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IXFH110N15T2 IXFH110N15T2.pdf
IXFH110N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
auf Bestellung 284 Stücke:
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10+8.98 EUR
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IXTH110N25T IXTH110N25T.pdf
IXTH110N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Case: TO247-3
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 157nC
Reverse recovery time: 170ns
On-state resistance: 26mΩ
Drain current: 110A
Drain-source voltage: 250V
Power dissipation: 694W
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IXFA110N15T2 IXFA(P)110N15T2.pdf
IXFA110N15T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Case: TO263
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
auf Bestellung 37 Stücke:
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IXFH110N10P IXFH110N10P.pdf
IXFH110N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 171 Stücke:
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8+10.77 EUR
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DSB60C30PB DSB60C30PB.pdf
DSB60C30PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 530A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
auf Bestellung 160 Stücke:
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40+2.13 EUR
45+1.9 EUR
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57+1.51 EUR
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DSB60C60PB DSB60C60PB.pdf
DSB60C60PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Max. forward impulse current: 490A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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