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Technische Details IXYH100N65C5 IXYS
Description: IGBT TRENCH FS 650V 230A TO-247, Packaging: Bulk, Gate Charge: 313 nC, Test Condition: 300V, 50A, 2Ohm, 15V, Switching Energy: 560µJ (on), 780µJ (off), Td (on/off) @ 25°C: 40ns/255ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247 (IXYH), Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A, Power - Max: 750 W, Current - Collector Pulsed (Icm): 560 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 230 A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3.
Weitere Produktangebote IXYH100N65C5
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IXYH100N65C5 | Hersteller : IXYS |
 Description: IGBT TRENCH FS 650V 230A TO-247Packaging: Bulk Gate Charge: 313 nC Test Condition: 300V, 50A, 2Ohm, 15V Switching Energy: 560µJ (on), 780µJ (off) Td (on/off) @ 25°C: 40ns/255ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247 (IXYH) Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: 750 W Current - Collector Pulsed (Icm): 560 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 230 A Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 |
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| IXYH100N65C5 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 100A; 750W; TO247-3 Type of transistor: IGBT Power dissipation: 750W Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 560A Collector-emitter voltage: 650V |
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