| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXTA26P20P-TRL | IXYS |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; 26A; 300W; D2PAK,TO263 Mounting: SMD Drain current: 26A Kind of channel: enhancement Type of transistor: P-MOSFET Gate-source voltage: 20V Case: D2PAK; TO263 On-state resistance: 0.17Ω Power dissipation: 300W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTN90P20P | IXYS |
Category: Transistor modules Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A Drain current: -90A Kind of channel: enhancement Drain-source voltage: -200V Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: ±30V Semiconductor structure: single transistor Case: SOT227B On-state resistance: 44mΩ Reverse recovery time: 315ns Pulsed drain current: -270A Type of semiconductor module: MOSFET transistor Power dissipation: 890W Gate charge: 205nC Polarisation: unipolar Technology: PolarP™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTT48P20P | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268 Mounting: SMD Drain current: -48A Kind of channel: enhancement Drain-source voltage: -200V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO268 On-state resistance: 85mΩ Reverse recovery time: 260ns Power dissipation: 462W Gate charge: 103nC Polarisation: unipolar Technology: PolarP™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFP4N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Power dissipation: 150W Gate charge: 26nC Polarisation: unipolar Drain current: 4A |
auf Bestellung 396 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DMA150YA1600NA | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A Case: SOT227B Max. forward impulse current: 0.8kA Max. forward voltage: 1.16V Version: module Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: screw Load current: 150A Semiconductor structure: common anode Type of bridge rectifier: three-phase half bridge |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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LOC110 | IXYS |
Category: Optocouplers - others Description: Optocoupler; THT; OUT: photodiode; 3.75kV; DIP8 Type of optocoupler: optocoupler Mounting: THT Kind of output: photodiode Insulation voltage: 3.75kV Case: DIP8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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LOC110S | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; OUT: photodiode; 3.75kV Type of optocoupler: optocoupler Mounting: SMD Kind of output: photodiode Insulation voltage: 3.75kV |
auf Bestellung 235 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1135N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...85°C Contacts configuration: SPST-NC Insulation voltage: 1.5kV Turn-on time: 2ms Switched voltage: max. 350V AC; max. 350V DC Case: SOP4 Max. operating current: 120mA Turn-off time: 2ms Control current max.: 50mA On-state resistance: 35Ω |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1135NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 2ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CS20-22MOF1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 2.2kV; 18A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT; tube Mounting: THT Gate current: 250mA Max. off-state voltage: 2.2kV Load current: 18A Kind of package: tube Case: ISOPLUS i4-pac™ x024c Type of thyristor: thyristor Max. forward impulse current: 200A |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MEK300-06DA | IXYS |
Category: Diode modules Description: Module: diode; double,common cathode; 600V; If: 304A; Y4-M6; screw Type of semiconductor module: diode Semiconductor structure: common cathode; double Max. off-state voltage: 0.6kV Load current: 304A Case: Y4-M6 Max. forward voltage: 1.19V Max. forward impulse current: 2.4kA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFP24N60X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO220AB; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 400W Case: TO220AB On-state resistance: 0.175Ω Mounting: THT Gate charge: 47nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 140ns Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXDN602SIA | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
auf Bestellung 472 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXDN602D2TR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DFN8 Output current: -2...2A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
auf Bestellung 1998 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXDN602SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -2...2A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXDN602SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXDN602SITR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -2...2A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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LAA108P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Max. operating current: 300mA Switched voltage: max. 100V AC; max. 100V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Control current max.: 50mA Kind of output: MOSFET |
auf Bestellung 418 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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LCA712 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Switched voltage: max. 60V AC; max. 60V DC Mounting: THT Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Turn-on time: 2.5ms Case: DIP6 Max. operating current: 1A Turn-off time: 350µs Control current max.: 50mA On-state resistance: 0.5Ω Manufacturer series: OptoMOS Relay variant: 1-phase; current source |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DPF240X200NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 200V Load current: 120A x2 Case: SOT227B Max. forward voltage: 1.06V Max. forward impulse current: 1.2kA Electrical mounting: screw Max. load current: 240A Mechanical mounting: screw Kind of package: tube |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DSA240X200NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 200V Load current: 120A x2 Case: SOT227B Max. forward voltage: 0.87V Max. forward impulse current: 1.6kA Electrical mounting: screw Max. load current: 240A Mechanical mounting: screw Features of semiconductor devices: Schottky Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFN520N075T2 | IXYS |
Category: Transistor modules Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 75V Drain current: 480A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 1.9mΩ Pulsed drain current: 1.5kA Power dissipation: 940W Technology: GigaMOS™; HiPerFET™; TrenchT2™ Kind of channel: enhancement Gate charge: 545nC Reverse recovery time: 150ns Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MCC312-16io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 320Ax2; Ifmax: 520A; Y1-CU Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 320A x2 Max. load current: 520A Case: Y1-CU Max. forward voltage: 1.32V Max. forward impulse current: 8kA Gate current: 150/220mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| VVZ110-12IO7 | IXYS |
Category: Three phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E Version: module Case: PWS-E Leads: M6 screws Electrical mounting: FASTON connectors; screw Type of bridge rectifier: half-controlled Mechanical mounting: screw Gate current: 100/200mA Max. forward voltage: 1.75V Load current: 110A Max. off-state voltage: 1.2kV Max. forward impulse current: 1.35kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IXBOD2-50R | IXYS |
Category: Thyristors - others Description: Thyristor: BOD x4; 0.9A; BOD; THT; 2nd Gen; 5kV; bulk Mounting: THT Type of thyristor: BOD x4 Case: BOD Max. load current: 0.9A Breakover voltage: 5kV Technology: 2nd Gen Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IXyH100N65C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3 Case: TO247-3 Technology: GenX3™; Planar; XPT™ Type of transistor: IGBT Kind of package: tube Mounting: THT Turn-on time: 62ns Gate charge: 172nC Turn-off time: 200ns Gate-emitter voltage: ±20V Power dissipation: 830W Collector current: 100A Pulsed collector current: 420A Collector-emitter voltage: 650V |
auf Bestellung 275 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP32P20T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns On-state resistance: 0.13Ω Reverse recovery time: 190ns Mounting: THT Power dissipation: 300W Gate charge: 185nC Polarisation: unipolar Technology: TrenchP™ Drain current: -32A Kind of channel: enhancement Drain-source voltage: -200V Type of transistor: P-MOSFET Gate-source voltage: ±15V Kind of package: tube Case: TO220AB |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP32P05T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB On-state resistance: 39mΩ Reverse recovery time: 26ns Mounting: THT Power dissipation: 83W Gate charge: 46nC Polarisation: unipolar Technology: TrenchP™ Drain current: -32A Kind of channel: enhancement Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±15V Kind of package: tube Case: TO220AB |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXKK85N60C | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 85A Power dissipation: 694W Case: TO264 On-state resistance: 36mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: super junction coolmos |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1130N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 2ms Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH88N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO247-3 Mounting: THT Type of transistor: N-MOSFET Case: TO247-3 Kind of package: tube Polarisation: unipolar Gate charge: 180nC On-state resistance: 40mΩ Drain current: 88A Drain-source voltage: 300V Power dissipation: 600W Kind of channel: enhancement |
auf Bestellung 292 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK150N30P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264 Case: TO264 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 197nC On-state resistance: 19mΩ Drain current: 150A Drain-source voltage: 300V Mounting: THT Power dissipation: 1.3kW Kind of package: tube |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK88N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264 Mounting: THT Type of transistor: N-MOSFET Case: TO264 Kind of package: tube Polarisation: unipolar Gate charge: 180nC On-state resistance: 40mΩ Drain current: 88A Drain-source voltage: 300V Power dissipation: 600W Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK140N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264 Mounting: THT Power dissipation: 1.04kW Gate charge: 185nC Polarisation: unipolar Technology: HiPerFET™; Polar™ Drain current: 140A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO264 On-state resistance: 24mΩ Reverse recovery time: 200ns |
auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFT120N30X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268 Mounting: SMD Power dissipation: 735W Gate charge: 170nC Polarisation: unipolar Technology: HiPerFET™; X3-Class Drain current: 120A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO268 On-state resistance: 11mΩ Reverse recovery time: 145ns |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFB170N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 170A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 258nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTK140N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264 Mounting: THT Power dissipation: 1.04kW Gate charge: 185nC Polarisation: unipolar Technology: Polar™ Drain current: 140A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO264 On-state resistance: 0.24Ω Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK140N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264 Mounting: THT Power dissipation: 960W Gate charge: 255nC Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Drain current: 140A Kind of channel: enhancement Drain-source voltage: 250V Type of transistor: N-MOSFET Kind of package: tube Case: TO264 On-state resistance: 17mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXYK140N120A4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 140A; 1.5kW; TO264 Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 1.5kW Pulsed collector current: 1.2kA Type of transistor: IGBT Kind of package: tube Case: TO264 Gate-emitter voltage: ±20V Collector current: 140A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXYK140N90C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264 Mounting: THT Collector-emitter voltage: 900V Power dissipation: 1.63kW Gate charge: 330nC Technology: GenX3™; Planar; XPT™ Pulsed collector current: 840A Type of transistor: IGBT Turn-on time: 122ns Kind of package: tube Case: TO264 Turn-off time: 0.3µs Gate-emitter voltage: ±20V Collector current: 140A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH12N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Power dissipation: 463W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns |
auf Bestellung 263 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH12N100L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Power dissipation: 400W Case: TO247-3 On-state resistance: 1.3Ω Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 1µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CPC3703CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89 Kind of channel: depletion Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Case: SOT89 On-state resistance: 4Ω Drain current: 0.36A Power dissipation: 1.1W Gate-source voltage: ±15V Drain-source voltage: 250V Polarisation: unipolar |
auf Bestellung 1478 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DSEK60-02A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; TO247-3; 125W Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 34A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 325A Case: TO247-3 Max. forward voltage: 1.1V Power dissipation: 125W Reverse recovery time: 35ns Technology: FRED |
auf Bestellung 288 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DSEK60-02AR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; ISOPLUS247™ Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 34A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 325A Case: ISOPLUS247™ Max. forward voltage: 1.1V Power dissipation: 125W Reverse recovery time: 35ns Technology: FRED |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DNA30E2200PA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W Mounting: THT Max. forward impulse current: 315A Max. forward voltage: 1.24V Power dissipation: 210W Max. off-state voltage: 2.2kV Load current: 30A Kind of package: tube Semiconductor structure: single diode Case: TO220AC Type of diode: rectifying |
auf Bestellung 294 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DNA30E2200FE | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; Ufmax: 1.22V Mounting: THT Max. forward impulse current: 370A Max. forward voltage: 1.22V Power dissipation: 110W Features of semiconductor devices: high voltage Max. off-state voltage: 2.2kV Load current: 30A Kind of package: tube Semiconductor structure: single diode Case: ISOPLUS i4-pac™ x024e Type of diode: rectifying |
auf Bestellung 226 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXDI614SITR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SOIC8; 14A; Ch: 1; MOSFET Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SOIC8 Output current: 14A Number of channels: 1 Integrated circuit features: MOSFET Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 25ns Pulse fall time: 18ns Application: automotive industry Maximum output current: 14A Supply voltage: 4.5...35V Kind of output: N-Channel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXFR26N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 15A Power dissipation: 290W Case: ISOPLUS247™ On-state resistance: 0.43Ω Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhancement |
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Im Einkaufswagen Stück im Wert von UAH |
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IXTP1R6N100D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: THT Gate charge: 645nC Kind of package: tube Kind of channel: depletion Reverse recovery time: 11ns |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTY1R6N100D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO252 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 645nC Kind of package: tube Kind of channel: depletion Reverse recovery time: 11ns |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA1R6N100D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO263 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 645nC Kind of package: tube Kind of channel: depletion Reverse recovery time: 11ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA1R6N100D2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO263 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 27nC Kind of package: tube Kind of channel: depletion Reverse recovery time: 970ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1117NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CPC1014NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 1.5kV Turn-on time: 2ms Switched voltage: max. 60V AC; max. 60V DC Case: SOP4 Max. operating current: 0.4A Turn-off time: 1ms Control current max.: 50mA On-state resistance: 2Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 4.09x3.81x2.03mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTY44N10T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns Case: TO252 Mounting: SMD Kind of package: tube Power dissipation: 130W Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Drain current: 44A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET On-state resistance: 30mΩ Reverse recovery time: 60ns |
auf Bestellung 421 Stücke: Lieferzeit 14-21 Tag (e) |
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| MCC72-08io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 116A Case: TO240AA Max. forward voltage: 1.82V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCC72-08io8B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 116A Case: TO240AA Max. forward voltage: 1.82V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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DSEI2X121-02A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 200V Load current: 123A x2 Case: SOT227B Max. forward voltage: 1.1V Max. forward impulse current: 1.3kA Electrical mounting: screw Max. load current: 246A Mechanical mounting: screw Kind of package: tube |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1130NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 2ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTA26P20P-TRL |
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Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 26A; 300W; D2PAK,TO263
Mounting: SMD
Drain current: 26A
Kind of channel: enhancement
Type of transistor: P-MOSFET
Gate-source voltage: 20V
Case: D2PAK; TO263
On-state resistance: 0.17Ω
Power dissipation: 300W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 26A; 300W; D2PAK,TO263
Mounting: SMD
Drain current: 26A
Kind of channel: enhancement
Type of transistor: P-MOSFET
Gate-source voltage: 20V
Case: D2PAK; TO263
On-state resistance: 0.17Ω
Power dissipation: 300W
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| IXTN90P20P |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A
Drain current: -90A
Kind of channel: enhancement
Drain-source voltage: -200V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±30V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 44mΩ
Reverse recovery time: 315ns
Pulsed drain current: -270A
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Gate charge: 205nC
Polarisation: unipolar
Technology: PolarP™
Category: Transistor modules
Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A
Drain current: -90A
Kind of channel: enhancement
Drain-source voltage: -200V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±30V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 44mΩ
Reverse recovery time: 315ns
Pulsed drain current: -270A
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Gate charge: 205nC
Polarisation: unipolar
Technology: PolarP™
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXTT48P20P |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268
Mounting: SMD
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 85mΩ
Reverse recovery time: 260ns
Power dissipation: 462W
Gate charge: 103nC
Polarisation: unipolar
Technology: PolarP™
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268
Mounting: SMD
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 85mΩ
Reverse recovery time: 260ns
Power dissipation: 462W
Gate charge: 103nC
Polarisation: unipolar
Technology: PolarP™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFP4N100P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Power dissipation: 150W
Gate charge: 26nC
Polarisation: unipolar
Drain current: 4A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Power dissipation: 150W
Gate charge: 26nC
Polarisation: unipolar
Drain current: 4A
auf Bestellung 396 Stücke:
Lieferzeit 14-21 Tag (e)
| DMA150YA1600NA |
|
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Max. forward impulse current: 0.8kA
Max. forward voltage: 1.16V
Version: module
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 150A
Semiconductor structure: common anode
Type of bridge rectifier: three-phase half bridge
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Max. forward impulse current: 0.8kA
Max. forward voltage: 1.16V
Version: module
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 150A
Semiconductor structure: common anode
Type of bridge rectifier: three-phase half bridge
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
| LOC110 |
|
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; THT; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: DIP8
Category: Optocouplers - others
Description: Optocoupler; THT; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: DIP8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LOC110S |
|
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: photodiode; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: photodiode
Insulation voltage: 3.75kV
Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: photodiode; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: photodiode
Insulation voltage: 3.75kV
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1135N |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 350V AC; max. 350V DC
Case: SOP4
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 350V AC; max. 350V DC
Case: SOP4
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1135NTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CS20-22MOF1 |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; 18A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT; tube
Mounting: THT
Gate current: 250mA
Max. off-state voltage: 2.2kV
Load current: 18A
Kind of package: tube
Case: ISOPLUS i4-pac™ x024c
Type of thyristor: thyristor
Max. forward impulse current: 200A
Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; 18A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT; tube
Mounting: THT
Gate current: 250mA
Max. off-state voltage: 2.2kV
Load current: 18A
Kind of package: tube
Case: ISOPLUS i4-pac™ x024c
Type of thyristor: thyristor
Max. forward impulse current: 200A
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
| MEK300-06DA |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 304A; Y4-M6; screw
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 0.6kV
Load current: 304A
Case: Y4-M6
Max. forward voltage: 1.19V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 304A; Y4-M6; screw
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 0.6kV
Load current: 304A
Case: Y4-M6
Max. forward voltage: 1.19V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFP24N60X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO220AB; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO220AB; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXDN602SIA |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 472 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDN602D2TR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 1998 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDN602SI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXDN602SIATR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXDN602SITR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| LAA108P |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Control current max.: 50mA
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Control current max.: 50mA
Kind of output: MOSFET
auf Bestellung 418 Stücke:
Lieferzeit 14-21 Tag (e)
| LCA712 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Case: DIP6
Max. operating current: 1A
Turn-off time: 350µs
Control current max.: 50mA
On-state resistance: 0.5Ω
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Case: DIP6
Max. operating current: 1A
Turn-off time: 350µs
Control current max.: 50mA
On-state resistance: 0.5Ω
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| DPF240X200NA |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 1.06V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Max. load current: 240A
Mechanical mounting: screw
Kind of package: tube
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 1.06V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Max. load current: 240A
Mechanical mounting: screw
Kind of package: tube
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
| DSA240X200NA |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.87V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Max. load current: 240A
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Kind of package: tube
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.87V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Max. load current: 240A
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| IXFN520N075T2 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 75V
Drain current: 480A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.9mΩ
Pulsed drain current: 1.5kA
Power dissipation: 940W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate charge: 545nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 75V
Drain current: 480A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.9mΩ
Pulsed drain current: 1.5kA
Power dissipation: 940W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate charge: 545nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCC312-16io1 |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320Ax2; Ifmax: 520A; Y1-CU
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A x2
Max. load current: 520A
Case: Y1-CU
Max. forward voltage: 1.32V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320Ax2; Ifmax: 520A; Y1-CU
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A x2
Max. load current: 520A
Case: Y1-CU
Max. forward voltage: 1.32V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VVZ110-12IO7 |
|
Hersteller: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E
Version: module
Case: PWS-E
Leads: M6 screws
Electrical mounting: FASTON connectors; screw
Type of bridge rectifier: half-controlled
Mechanical mounting: screw
Gate current: 100/200mA
Max. forward voltage: 1.75V
Load current: 110A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.35kA
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E
Version: module
Case: PWS-E
Leads: M6 screws
Electrical mounting: FASTON connectors; screw
Type of bridge rectifier: half-controlled
Mechanical mounting: screw
Gate current: 100/200mA
Max. forward voltage: 1.75V
Load current: 110A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.35kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXBOD2-50R |
|
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; 2nd Gen; 5kV; bulk
Mounting: THT
Type of thyristor: BOD x4
Case: BOD
Max. load current: 0.9A
Breakover voltage: 5kV
Technology: 2nd Gen
Kind of package: bulk
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; 2nd Gen; 5kV; bulk
Mounting: THT
Type of thyristor: BOD x4
Case: BOD
Max. load current: 0.9A
Breakover voltage: 5kV
Technology: 2nd Gen
Kind of package: bulk
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IXyH100N65C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 62ns
Gate charge: 172nC
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Power dissipation: 830W
Collector current: 100A
Pulsed collector current: 420A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 62ns
Gate charge: 172nC
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Power dissipation: 830W
Collector current: 100A
Pulsed collector current: 420A
Collector-emitter voltage: 650V
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTP32P20T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
On-state resistance: 0.13Ω
Reverse recovery time: 190ns
Mounting: THT
Power dissipation: 300W
Gate charge: 185nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -32A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO220AB
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
On-state resistance: 0.13Ω
Reverse recovery time: 190ns
Mounting: THT
Power dissipation: 300W
Gate charge: 185nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -32A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO220AB
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTP32P05T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
On-state resistance: 39mΩ
Reverse recovery time: 26ns
Mounting: THT
Power dissipation: 83W
Gate charge: 46nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -32A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO220AB
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
On-state resistance: 39mΩ
Reverse recovery time: 26ns
Mounting: THT
Power dissipation: 83W
Gate charge: 46nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -32A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO220AB
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
| IXKK85N60C |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPC1130N |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH88N30P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 40mΩ
Drain current: 88A
Drain-source voltage: 300V
Power dissipation: 600W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 40mΩ
Drain current: 88A
Drain-source voltage: 300V
Power dissipation: 600W
Kind of channel: enhancement
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFK150N30P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Case: TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 197nC
On-state resistance: 19mΩ
Drain current: 150A
Drain-source voltage: 300V
Mounting: THT
Power dissipation: 1.3kW
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Case: TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 197nC
On-state resistance: 19mΩ
Drain current: 150A
Drain-source voltage: 300V
Mounting: THT
Power dissipation: 1.3kW
Kind of package: tube
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFK88N30P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 40mΩ
Drain current: 88A
Drain-source voltage: 300V
Power dissipation: 600W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 40mΩ
Drain current: 88A
Drain-source voltage: 300V
Power dissipation: 600W
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFK140N30P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Power dissipation: 1.04kW
Gate charge: 185nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 24mΩ
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Power dissipation: 1.04kW
Gate charge: 185nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 24mΩ
Reverse recovery time: 200ns
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFT120N30X3HV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Mounting: SMD
Power dissipation: 735W
Gate charge: 170nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 11mΩ
Reverse recovery time: 145ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Mounting: SMD
Power dissipation: 735W
Gate charge: 170nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 11mΩ
Reverse recovery time: 145ns
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFB170N30P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 170A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 258nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 170A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 258nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTK140N30P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Power dissipation: 1.04kW
Gate charge: 185nC
Polarisation: unipolar
Technology: Polar™
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 0.24Ω
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Power dissipation: 1.04kW
Gate charge: 185nC
Polarisation: unipolar
Technology: Polar™
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 0.24Ω
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFK140N25T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264
Mounting: THT
Power dissipation: 960W
Gate charge: 255nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 17mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264
Mounting: THT
Power dissipation: 960W
Gate charge: 255nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 17mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYK140N120A4 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 1.5kW; TO264
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 1.5kW
Pulsed collector current: 1.2kA
Type of transistor: IGBT
Kind of package: tube
Case: TO264
Gate-emitter voltage: ±20V
Collector current: 140A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 1.5kW; TO264
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 1.5kW
Pulsed collector current: 1.2kA
Type of transistor: IGBT
Kind of package: tube
Case: TO264
Gate-emitter voltage: ±20V
Collector current: 140A
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXYK140N90C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Collector-emitter voltage: 900V
Power dissipation: 1.63kW
Gate charge: 330nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 840A
Type of transistor: IGBT
Turn-on time: 122ns
Kind of package: tube
Case: TO264
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 140A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Collector-emitter voltage: 900V
Power dissipation: 1.63kW
Gate charge: 330nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 840A
Type of transistor: IGBT
Turn-on time: 122ns
Kind of package: tube
Case: TO264
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 140A
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| IXFH12N100P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 263 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH12N100L |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
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| CPC3703CTR |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT89
On-state resistance: 4Ω
Drain current: 0.36A
Power dissipation: 1.1W
Gate-source voltage: ±15V
Drain-source voltage: 250V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT89
On-state resistance: 4Ω
Drain current: 0.36A
Power dissipation: 1.1W
Gate-source voltage: ±15V
Drain-source voltage: 250V
Polarisation: unipolar
auf Bestellung 1478 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEK60-02A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-3
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-3
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 288 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEK60-02AR |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: ISOPLUS247™
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: ISOPLUS247™
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
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| DNA30E2200PA |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Mounting: THT
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Power dissipation: 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Mounting: THT
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Power dissipation: 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Type of diode: rectifying
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)
| DNA30E2200FE |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; Ufmax: 1.22V
Mounting: THT
Max. forward impulse current: 370A
Max. forward voltage: 1.22V
Power dissipation: 110W
Features of semiconductor devices: high voltage
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: ISOPLUS i4-pac™ x024e
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; Ufmax: 1.22V
Mounting: THT
Max. forward impulse current: 370A
Max. forward voltage: 1.22V
Power dissipation: 110W
Features of semiconductor devices: high voltage
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: ISOPLUS i4-pac™ x024e
Type of diode: rectifying
auf Bestellung 226 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDI614SITR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SOIC8; 14A; Ch: 1; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SOIC8
Output current: 14A
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 18ns
Application: automotive industry
Maximum output current: 14A
Supply voltage: 4.5...35V
Kind of output: N-Channel
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SOIC8; 14A; Ch: 1; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SOIC8
Output current: 14A
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 18ns
Application: automotive industry
Maximum output current: 14A
Supply voltage: 4.5...35V
Kind of output: N-Channel
Produkt ist nicht verfügbar
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| IXFR26N100P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTP1R6N100D2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: THT
Gate charge: 645nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: THT
Gate charge: 645nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTY1R6N100D2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 645nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 645nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA1R6N100D2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 645nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 645nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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| IXTA1R6N100D2HV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 970ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 970ns
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| CPC1117NTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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| CPC1014NTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SOP4
Max. operating current: 0.4A
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 2Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SOP4
Max. operating current: 0.4A
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 2Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
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| IXTY44N10T |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Case: TO252
Mounting: SMD
Kind of package: tube
Power dissipation: 130W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
On-state resistance: 30mΩ
Reverse recovery time: 60ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Case: TO252
Mounting: SMD
Kind of package: tube
Power dissipation: 130W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
On-state resistance: 30mΩ
Reverse recovery time: 60ns
auf Bestellung 421 Stücke:
Lieferzeit 14-21 Tag (e)
| MCC72-08io1B |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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| MCC72-08io8B |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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| DSEI2X121-02A |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 123A x2
Case: SOT227B
Max. forward voltage: 1.1V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Max. load current: 246A
Mechanical mounting: screw
Kind of package: tube
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 123A x2
Case: SOT227B
Max. forward voltage: 1.1V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Max. load current: 246A
Mechanical mounting: screw
Kind of package: tube
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1130NTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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