Technische Details IXFK32N90P IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264, Polarisation: unipolar, Gate charge: 215nC, On-state resistance: 0.3Ω, Drain current: 32A, Power dissipation: 960W, Drain-source voltage: 900V, Case: TO264, Kind of channel: enhancement, Type of transistor: N-MOSFET, Kind of package: tube, Mounting: THT.
Weitere Produktangebote IXFK32N90P
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IXFK32N90P | Hersteller : IXYS |
 MOSFETs Polar HiPerFETs MOSFET w/Fast Diode |
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IXFK32N90P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264 Polarisation: unipolar Gate charge: 215nC On-state resistance: 0.3Ω Drain current: 32A Power dissipation: 960W Drain-source voltage: 900V Case: TO264 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
Produkt ist nicht verfügbar |