IXFP4N100P IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO220AB
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 18+ | 4.18 EUR |
| 20+ | 3.76 EUR |
| 22+ | 3.32 EUR |
| 50+ | 3 EUR |
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Technische Details IXFP4N100P IXYS
Description: MOSFET N-CH 1000V 4A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IXFP4N100P
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFP4N100P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 4A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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IXFP4N100P | Hersteller : IXYS |
MOSFETs 4 Amps 1000V |
Produkt ist nicht verfügbar |