IXFP4N100P IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 119 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 4.18 EUR |
| 20+ | 3.76 EUR |
| 22+ | 3.32 EUR |
| 50+ | 3 EUR |
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Technische Details IXFP4N100P IXYS
Description: MOSFET N-CH 1000V 4A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 25 V.
Weitere Produktangebote IXFP4N100P nach Preis ab 3 EUR bis 4.18 EUR
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IXFP4N100P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Power dissipation: 150W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 26nC |
auf Bestellung 119 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP4N100P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXFP4N100P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXFP4N100P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 4A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFP4N100P | Hersteller : IXYS |
MOSFETs 4 Amps 1000V |
Produkt ist nicht verfügbar |