IXFP4N100P IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Case: TO220AB
Kind of package: tube
Mounting: THT
Power dissipation: 150W
Gate charge: 26nC
Polarisation: unipolar
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
| Anzahl | Privatkunde |
|---|---|
| 18+ | 4.97 EUR |
| 20+ | 4.47 EUR |
| 22+ | 3.95 EUR |
| 50+ | 3.57 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFP4N100P IXYS
Description: MOSFET N-CH 1000V 4A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IXFP4N100P nach Preis ab 4.71 EUR bis 11.65 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXFP4N100P | IXYS |
MOSFETs 4 Amps 1000V |
auf Bestellung 285 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IXFP4N100P |
|
Hersteller: IXYS
MOSFETs 4 Amps 1000V
MOSFETs 4 Amps 1000V
auf Bestellung 285 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.65 EUR |
| 10+ | 7.63 EUR |
| 100+ | 4.74 EUR |
| 500+ | 4.71 EUR |