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IXGH10N170A IXGH10N170A IXYS IXG_10N170A.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Type of transistor: IGBT
Technology: NPT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 29nC
Turn-on time: 107ns
Turn-off time: 240ns
Collector current: 5A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
8+10.14 EUR
10+8.22 EUR
Mindestbestellmenge: 8
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IXGH10N170 IXGH10N170 IXYS IXGH(t)10N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Type of transistor: IGBT
Technology: NPT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 32nC
Turn-on time: 0.3µs
Turn-off time: 630ns
Collector current: 10A
Pulsed collector current: 70A
Gate-emitter voltage: ±20V
Power dissipation: 110W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXTY32P05T-TRL IXYS Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 32A; 83W; DPAK,TO252AA
Case: DPAK; TO252AA
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
On-state resistance: 39mΩ
Power dissipation: 83W
Gate-source voltage: 15V
Drain current: 32A
Drain-source voltage: 50V
Produkt ist nicht verfügbar
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IXTA32P05T-TRL IXYS Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 32A; 83W; D2PAK,TO263
Case: D2PAK; TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
On-state resistance: 39mΩ
Power dissipation: 83W
Gate-source voltage: 15V
Drain current: 32A
Drain-source voltage: 50V
Produkt ist nicht verfügbar
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IXBT2N250 IXBT2N250 IXYS IXBH(T)2N250.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Mounting: SMD
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 10.6nC
Turn-on time: 310ns
Turn-off time: 252ns
Power dissipation: 32W
Collector current: 2A
Pulsed collector current: 13A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 2.5kV
Kind of package: tube
Technology: BiMOSFET™
Case: TO268
auf Bestellung 240 Stücke:
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3+27.83 EUR
10+25.11 EUR
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IXGH2N250 IXGH2N250 IXYS IXGH2N250.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 10.5nC
Turn-on time: 115ns
Turn-off time: 278ns
Power dissipation: 32W
Collector current: 2A
Pulsed collector current: 13.5A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 2.5kV
Kind of package: tube
Technology: NPT
Case: TO247-3
auf Bestellung 300 Stücke:
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3+24.71 EUR
10+22.39 EUR
30+19.96 EUR
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DSSK60-02A DSSK60-02A IXYS DSSK60-02A_AR.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 30Ax2; TO247-3; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.7V
Max. forward impulse current: 0.6kA
Power dissipation: 190W
Kind of package: tube
Produkt ist nicht verfügbar
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IXXH80N65B4 IXXH80N65B4 IXYS IXXH80N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Technology: GenX4™; Trench; XPT™
Mounting: THT
Case: TO247-3
Kind of package: tube
Turn-off time: 222ns
Collector current: 80A
Gate-emitter voltage: ±20V
Power dissipation: 625W
Pulsed collector current: 430A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Gate charge: 0.12µC
Turn-on time: 125ns
auf Bestellung 247 Stücke:
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8+9.71 EUR
11+6.51 EUR
30+5.86 EUR
60+5.81 EUR
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IXGP36N60A3 IXGP36N60A3 IXYS IXGA(P,H)36N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 220W; TO220-3
Type of transistor: IGBT
Power dissipation: 220W
Case: TO220-3
Mounting: THT
Collector-emitter voltage: 600V
Technology: GenX3™; PT
Kind of package: tube
Turn-on time: 43ns
Gate charge: 80nC
Turn-off time: 1µs
Gate-emitter voltage: ±20V
Collector current: 36A
Pulsed collector current: 200A
Produkt ist nicht verfügbar
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IXFK36N60P IXFK36N60P IXYS IXFH(K,T)36N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT36N60P IXFT36N60P IXYS IXFH(K,T)36N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFA36N60X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa36n60x3-datasheet?assetguid=9c561014-ffa0-419b-994f-22f5fa914d61 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
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IXFH36N60X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh36n60x3-datasheet?assetguid=38271253-e2cd-4f1f-b434-c9ed8035371e Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
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IXFP36N60X3 IXFP36N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp36n60x3_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
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IXFR36N60P IXFR36N60P IXYS IXFR36N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXGA36N60A3-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 36A; 220W; TO263
Type of transistor: IGBT
Power dissipation: 220W
Case: TO263
Mounting: SMD
Collector-emitter voltage: 600V
Collector current: 36A
Produkt ist nicht verfügbar
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IXGH28N60B3D1 IXGH28N60B3D1 IXYS IXGH28N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Power dissipation: 190W
Case: TO247-3
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 28A
Pulsed collector current: 150A
Produkt ist nicht verfügbar
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IXFQ28N60P3 IXFQ28N60P3 IXYS IXFH(Q)28N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX220N17T2 IXFX220N17T2 IXYS IXFK(X)220N17T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Kind of channel: enhancement
Case: PLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 500nC
On-state resistance: 6.3mΩ
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.84 EUR
6+13.21 EUR
10+12.26 EUR
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DPF80C200HB DPF80C200HB IXYS DPF80C200HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W
Kind of package: tube
Case: TO247-3
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 55ns
Max. forward voltage: 1.22V
Power dissipation: 215W
Load current: 40A x2
Max. off-state voltage: 200V
Max. forward impulse current: 560A
Semiconductor structure: common cathode; double
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1+71.5 EUR
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IXFH110N25T IXFH110N25T IXYS IXFH110N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 157nC
On-state resistance: 26mΩ
Drain current: 110A
Drain-source voltage: 250V
Power dissipation: 694W
Kind of channel: enhancement
auf Bestellung 256 Stücke:
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7+11.63 EUR
10+9.58 EUR
30+7.79 EUR
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IXTP110N055T2 IXTP110N055T2 IXYS IXTA(P)110N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
auf Bestellung 278 Stücke:
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20+3.73 EUR
23+3.2 EUR
26+2.85 EUR
32+2.29 EUR
36+2 EUR
38+1.93 EUR
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IXFH110N15T2 IXFH110N15T2 IXYS IXFH110N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Kind of channel: enhancement
auf Bestellung 284 Stücke:
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11+6.68 EUR
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IXTH110N25T IXTH110N25T IXYS IXTH110N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 9 Stücke:
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7+10.91 EUR
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IXFA110N15T2 IXFA110N15T2 IXYS IXFA(P)110N15T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Case: TO263
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Kind of channel: enhancement
auf Bestellung 41 Stücke:
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10+7.45 EUR
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IXFH110N10P IXFH110N10P IXYS IXFH110N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
auf Bestellung 171 Stücke:
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10+7.29 EUR
13+5.95 EUR
20+5.62 EUR
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DSB60C30PB DSB60C30PB IXYS DSB60C30PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 530A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
auf Bestellung 160 Stücke:
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40+1.79 EUR
45+1.6 EUR
51+1.42 EUR
57+1.27 EUR
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DSB60C60PB DSB60C60PB IXYS DSB60C60PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Max. forward impulse current: 490A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
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DSB60C30HB DSB60C30HB IXYS DSB60C30HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 570A
Power dissipation: 130W
Case: TO247-3
Kind of package: tube
Semiconductor structure: common cathode; double
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DSB60C45HB DSB60C45HB IXYS DSB60C45HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.58V
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.58V
Load current: 30A x2
Max. off-state voltage: 45V
Max. forward impulse current: 570A
Power dissipation: 130W
Case: TO247-3
Kind of package: tube
Semiconductor structure: common cathode; double
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DSB60C45PB DSB60C45PB IXYS DSB60C45PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.6V
Load current: 30A x2
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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IXYP8N90C3D1 IXYP8N90C3D1 IXYS IXYA(P)8N90C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
auf Bestellung 106 Stücke:
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16+4.52 EUR
18+4.06 EUR
20+3.59 EUR
50+3.23 EUR
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IXYP8N90C3 IXYP8N90C3 IXYS IXYP(y)8N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
Produkt ist nicht verfügbar
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IXBOD2-56R IXBOD2-56R IXYS _Katalog LF_IXYS_WESTCODE_2021.pdf Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; 2nd Gen; 5.6kV; bulk
Mounting: THT
Type of thyristor: BOD x4
Case: BOD
Max. load current: 0.9A
Breakover voltage: 5.6kV
Technology: 2nd Gen
Kind of package: bulk
Produkt ist nicht verfügbar
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IXFH120N25X3 IXFH120N25X3 IXYS IXFH(T,Q)120N25X3_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 292 Stücke:
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30+12.38 EUR
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IXFH120N20P IXFH120N20P IXYS IXFH(K)120N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Technology: HiPerFET™; Polar™
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IXFH120N15P IXFH120N15P IXYS IXF_120N15P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
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DSEI120-12A DSEI120-12A IXYS dsei120-12a.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
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DSEI120-12AZ-TUB DSEI120-12AZ-TUB IXYS DSEI120-12AZ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AA; Ufmax: 1.55V
Power dissipation: 357W
Case: TO268AA
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
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DSEI12-12A DSEI12-12A IXYS DSEI12-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
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DSEI12-12AZ-TRL IXYS Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 50ns; D2PAK,TO263AB; Ufmax: 2.6V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 2.6V
Max. forward impulse current: 75A
Technology: FRED
Kind of package: reel; tape
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DSEI12-12AZ-TUB IXYS DSEI12-12AZ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
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IXTA100N04T2 IXTA100N04T2 IXYS IXTA(P)100N04T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO263
On-state resistance: 7mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
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MG06400D-BN4MM IXYS MG06400D-BN4MM.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 400A
Max. off-state voltage: 0.6kV
Pulsed collector current: 800A
Produkt ist nicht verfügbar
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IXA30RG1200DHGLB IXA30RG1200DHGLB IXYS IXA30RG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Topology: boost chopper
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Electrical mounting: SMT
Case: SMPD-B
Technology: ISOPLUS™; Sonic FRD™
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 75A
Power dissipation: 147W
Max. off-state voltage: 1.2kV
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IXA20PG1200DHGLB IXA20PG1200DHGLB IXYS IXA20PG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Electrical mounting: SMT
Case: SMPD-B
Technology: ISOPLUS™; Sonic FRD™
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Power dissipation: 130W
Max. off-state voltage: 1.2kV
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DHG10I1800PA DHG10I1800PA IXYS DHG10I1800PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.33V
Load current: 10A
Max. forward impulse current: 60A
Power dissipation: 85W
Max. off-state voltage: 1.8kV
Reverse recovery time: 300ns
Features of semiconductor devices: fast switching
Case: TO220AC
Semiconductor structure: single diode
Type of diode: rectifying
Kind of package: tube
Mounting: THT
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DAA10EM1800PZ-TUB DAA10EM1800PZ-TUB IXYS DAA10EM1800PZ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.14V; 100W
Max. forward voltage: 1.14V
Load current: 10A
Max. forward impulse current: 130A
Power dissipation: 100W
Max. off-state voltage: 1.8kV
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Semiconductor structure: single diode
Type of diode: rectifying
Kind of package: tube
Mounting: SMD
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DAA10EM1800PZ-TRL IXYS media?resourcetype=datasheets&itemid=8b1378fb-444d-4854-bf2e-b3d297066d3b&filename=Littelfuse-Power-Semiconductors-DAA10EM1800PZ-Datasheet Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; D2PAK,TO263AB; Ufmax: 1.21V
Max. forward voltage: 1.21V
Load current: 10A
Max. forward impulse current: 160A
Max. off-state voltage: 1.8kV
Case: D2PAK; TO263AB
Semiconductor structure: single diode
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
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DAA10P1800PZ-TRL IXYS Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; D2PAK,TO263AB; Ufmax: 1.26V
Max. forward voltage: 1.26V
Load current: 10A
Max. forward impulse current: 160A
Max. off-state voltage: 1.8kV
Case: D2PAK; TO263AB
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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DAA10P1800PZ-TUB DAA10P1800PZ-TUB IXYS DAA10P1800PZ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.53V; 100W
Max. forward voltage: 1.53V
Load current: 10A
Max. forward impulse current: 150A
Power dissipation: 100W
Max. off-state voltage: 1.8kV
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Semiconductor structure: double series
Type of diode: rectifying
Kind of package: tube
Mounting: SMD
Produkt ist nicht verfügbar
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DMA10P1800PZ-TRL IXYS Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; D2PAK,TO263AB; Ufmax: 1.26V
Max. forward voltage: 1.26V
Load current: 10A
Max. forward impulse current: 130A
Max. off-state voltage: 1.8kV
Case: D2PAK; TO263AB
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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DMA10P1800PZ-TUB IXYS DMA10P1800PZ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.21V; 100W
Max. forward voltage: 1.21V
Load current: 10A
Max. forward impulse current: 100A
Power dissipation: 100W
Max. off-state voltage: 1.8kV
Case: TO263ABHV
Semiconductor structure: double series
Type of diode: rectifying
Kind of package: tube
Mounting: SMD
Produkt ist nicht verfügbar
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IXKH70N60C5 IXKH70N60C5 IXYS IXKH70N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Gate charge: 150nC
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Drain current: 70A
Kind of channel: enhancement
Drain-source voltage: 600V
Power dissipation: 625W
Case: TO247-3
Features of semiconductor devices: super junction coolmos
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXFT70N20Q3 IXFT70N20Q3 IXYS IXFH(T)70N20Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268
Case: TO268
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 67nC
On-state resistance: 40mΩ
Drain current: 70A
Drain-source voltage: 200V
Power dissipation: 690W
Kind of channel: enhancement
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IXFT70N30Q3 IXFT70N30Q3 IXYS IXFH(T)70N30Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268
Case: TO268
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 98nC
On-state resistance: 54mΩ
Drain current: 70A
Drain-source voltage: 300V
Power dissipation: 830W
Kind of channel: enhancement
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CLA30E1200HB CLA30E1200HB IXYS CLA30E1200HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 28mA; TO247AD; THT; tube
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 28mA
Max. load current: 47A
Load current: 30A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: TO247AD
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DLA60I1200HA DLA60I1200HA IXYS DLA60I1200HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 850A; TO247-2; 500W
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Max. forward impulse current: 850A
Kind of package: tube
Power dissipation: 500W
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CLA40E1200HR CLA40E1200HR IXYS CLA40E1200HR.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Max. load current: 63A
Max. forward impulse current: 555A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
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DCG10P1200HR DCG10P1200HR IXYS DCG10P1200HR.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 12.5A; ISO247™; tube
Type of diode: Schottky rectifying
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12.5A
Semiconductor structure: double series
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 2.2V
Max. forward impulse current: 750A
Kind of package: tube
Technology: SiC
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IXGH10N170A IXG_10N170A.pdf
IXGH10N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Type of transistor: IGBT
Technology: NPT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 29nC
Turn-on time: 107ns
Turn-off time: 240ns
Collector current: 5A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
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IXGH10N170 IXGH(t)10N170.pdf
IXGH10N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Type of transistor: IGBT
Technology: NPT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 32nC
Turn-on time: 0.3µs
Turn-off time: 630ns
Collector current: 10A
Pulsed collector current: 70A
Gate-emitter voltage: ±20V
Power dissipation: 110W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
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IXTY32P05T-TRL
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 32A; 83W; DPAK,TO252AA
Case: DPAK; TO252AA
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
On-state resistance: 39mΩ
Power dissipation: 83W
Gate-source voltage: 15V
Drain current: 32A
Drain-source voltage: 50V
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IXTA32P05T-TRL
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 32A; 83W; D2PAK,TO263
Case: D2PAK; TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
On-state resistance: 39mΩ
Power dissipation: 83W
Gate-source voltage: 15V
Drain current: 32A
Drain-source voltage: 50V
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IXBT2N250 IXBH(T)2N250.pdf
IXBT2N250
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Mounting: SMD
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 10.6nC
Turn-on time: 310ns
Turn-off time: 252ns
Power dissipation: 32W
Collector current: 2A
Pulsed collector current: 13A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 2.5kV
Kind of package: tube
Technology: BiMOSFET™
Case: TO268
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IXGH2N250 IXGH2N250.pdf
IXGH2N250
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 10.5nC
Turn-on time: 115ns
Turn-off time: 278ns
Power dissipation: 32W
Collector current: 2A
Pulsed collector current: 13.5A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 2.5kV
Kind of package: tube
Technology: NPT
Case: TO247-3
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DSSK60-02A DSSK60-02A_AR.pdf
DSSK60-02A
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 30Ax2; TO247-3; Ufmax: 0.7V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.7V
Max. forward impulse current: 0.6kA
Power dissipation: 190W
Kind of package: tube
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IXXH80N65B4 IXXH80N65B4.pdf
IXXH80N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Technology: GenX4™; Trench; XPT™
Mounting: THT
Case: TO247-3
Kind of package: tube
Turn-off time: 222ns
Collector current: 80A
Gate-emitter voltage: ±20V
Power dissipation: 625W
Pulsed collector current: 430A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Gate charge: 0.12µC
Turn-on time: 125ns
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8+9.71 EUR
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30+5.86 EUR
60+5.81 EUR
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IXGP36N60A3 IXGA(P,H)36N60A3.pdf
IXGP36N60A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 220W; TO220-3
Type of transistor: IGBT
Power dissipation: 220W
Case: TO220-3
Mounting: THT
Collector-emitter voltage: 600V
Technology: GenX3™; PT
Kind of package: tube
Turn-on time: 43ns
Gate charge: 80nC
Turn-off time: 1µs
Gate-emitter voltage: ±20V
Collector current: 36A
Pulsed collector current: 200A
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IXFK36N60P IXFH(K,T)36N60P.pdf
IXFK36N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
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IXFT36N60P IXFH(K,T)36N60P.pdf
IXFT36N60P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFA36N60X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa36n60x3-datasheet?assetguid=9c561014-ffa0-419b-994f-22f5fa914d61
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH36N60X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh36n60x3-datasheet?assetguid=38271253-e2cd-4f1f-b434-c9ed8035371e
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFP36N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp36n60x3_datasheet.pdf.pdf
IXFP36N60X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
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IXFR36N60P IXFR36N60P.pdf
IXFR36N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXGA36N60A3-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 36A; 220W; TO263
Type of transistor: IGBT
Power dissipation: 220W
Case: TO263
Mounting: SMD
Collector-emitter voltage: 600V
Collector current: 36A
Produkt ist nicht verfügbar
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IXGH28N60B3D1 IXGH28N60B3D1.pdf
IXGH28N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Power dissipation: 190W
Case: TO247-3
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 28A
Pulsed collector current: 150A
Produkt ist nicht verfügbar
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IXFQ28N60P3 IXFH(Q)28N60P3.pdf
IXFQ28N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX220N17T2 IXFK(X)220N17T2.pdf
IXFX220N17T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Kind of channel: enhancement
Case: PLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 500nC
On-state resistance: 6.3mΩ
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.84 EUR
6+13.21 EUR
10+12.26 EUR
Mindestbestellmenge: 5
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DPF80C200HB DPF80C200HB.pdf
DPF80C200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W
Kind of package: tube
Case: TO247-3
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 55ns
Max. forward voltage: 1.22V
Power dissipation: 215W
Load current: 40A x2
Max. off-state voltage: 200V
Max. forward impulse current: 560A
Semiconductor structure: common cathode; double
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXFH110N25T IXFH110N25T.pdf
IXFH110N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 157nC
On-state resistance: 26mΩ
Drain current: 110A
Drain-source voltage: 250V
Power dissipation: 694W
Kind of channel: enhancement
auf Bestellung 256 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.63 EUR
10+9.58 EUR
30+7.79 EUR
Mindestbestellmenge: 7
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IXTP110N055T2 IXTA(P)110N055T2.pdf
IXTP110N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
auf Bestellung 278 Stücke:
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Anzahl Preis
20+3.73 EUR
23+3.2 EUR
26+2.85 EUR
32+2.29 EUR
36+2 EUR
38+1.93 EUR
Mindestbestellmenge: 20
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IXFH110N15T2 IXFH110N15T2.pdf
IXFH110N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Kind of channel: enhancement
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.55 EUR
11+6.68 EUR
Mindestbestellmenge: 10
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IXTH110N25T IXTH110N25T.pdf
IXTH110N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.91 EUR
Mindestbestellmenge: 7
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IXFA110N15T2 IXFA(P)110N15T2.pdf
IXFA110N15T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Case: TO263
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Kind of channel: enhancement
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.45 EUR
Mindestbestellmenge: 10
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IXFH110N10P IXFH110N10P.pdf
IXFH110N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.05 EUR
10+7.29 EUR
13+5.95 EUR
20+5.62 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
DSB60C30PB DSB60C30PB.pdf
DSB60C30PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 530A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
45+1.6 EUR
51+1.42 EUR
57+1.27 EUR
Mindestbestellmenge: 40
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DSB60C60PB DSB60C60PB.pdf
DSB60C60PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Max. forward impulse current: 490A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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DSB60C30HB DSB60C30HB.pdf
DSB60C30HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 570A
Power dissipation: 130W
Case: TO247-3
Kind of package: tube
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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DSB60C45HB DSB60C45HB.pdf
DSB60C45HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.58V
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.58V
Load current: 30A x2
Max. off-state voltage: 45V
Max. forward impulse current: 570A
Power dissipation: 130W
Case: TO247-3
Kind of package: tube
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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DSB60C45PB DSB60C45PB.pdf
DSB60C45PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.6V
Load current: 30A x2
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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IXYP8N90C3D1 IXYA(P)8N90C3D1.pdf
IXYP8N90C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.52 EUR
18+4.06 EUR
20+3.59 EUR
50+3.23 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IXYP8N90C3 IXYP(y)8N90C3.pdf
IXYP8N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
Produkt ist nicht verfügbar
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IXBOD2-56R _Katalog LF_IXYS_WESTCODE_2021.pdf
IXBOD2-56R
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; 2nd Gen; 5.6kV; bulk
Mounting: THT
Type of thyristor: BOD x4
Case: BOD
Max. load current: 0.9A
Breakover voltage: 5.6kV
Technology: 2nd Gen
Kind of package: bulk
Produkt ist nicht verfügbar
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IXFH120N25X3 IXFH(T,Q)120N25X3_HV.pdf
IXFH120N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.4 EUR
30+12.38 EUR
Mindestbestellmenge: 5
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IXFH120N20P IXFH(K)120N20P.pdf
IXFH120N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Technology: HiPerFET™; Polar™
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.23 EUR
7+11.85 EUR
10+10.51 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFH120N15P IXF_120N15P.pdf
IXFH120N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.3 EUR
9+8.02 EUR
10+7.54 EUR
Mindestbestellmenge: 8
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DSEI120-12A description dsei120-12a.pdf
DSEI120-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.51 EUR
Mindestbestellmenge: 6
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DSEI120-12AZ-TUB DSEI120-12AZ.pdf
DSEI120-12AZ-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AA; Ufmax: 1.55V
Power dissipation: 357W
Case: TO268AA
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.44 EUR
6+14.19 EUR
10+12.58 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DSEI12-12A DSEI12-12A.pdf
DSEI12-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.16 EUR
30+2.43 EUR
37+1.96 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
DSEI12-12AZ-TRL
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 50ns; D2PAK,TO263AB; Ufmax: 2.6V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 2.6V
Max. forward impulse current: 75A
Technology: FRED
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DSEI12-12AZ-TUB DSEI12-12AZ.pdf
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Produkt ist nicht verfügbar
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IXTA100N04T2 IXTA(P)100N04T2.pdf
IXTA100N04T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO263
On-state resistance: 7mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
Produkt ist nicht verfügbar
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MG06400D-BN4MM MG06400D-BN4MM.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 400A
Max. off-state voltage: 0.6kV
Pulsed collector current: 800A
Produkt ist nicht verfügbar
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IXA30RG1200DHGLB IXA30RG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf
IXA30RG1200DHGLB
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Topology: boost chopper
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Electrical mounting: SMT
Case: SMPD-B
Technology: ISOPLUS™; Sonic FRD™
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 75A
Power dissipation: 147W
Max. off-state voltage: 1.2kV
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.61 EUR
Mindestbestellmenge: 10
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IXA20PG1200DHGLB IXA20PG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf
IXA20PG1200DHGLB
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Electrical mounting: SMT
Case: SMPD-B
Technology: ISOPLUS™; Sonic FRD™
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Power dissipation: 130W
Max. off-state voltage: 1.2kV
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.13 EUR
7+10.64 EUR
10+10.32 EUR
Mindestbestellmenge: 6
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DHG10I1800PA DHG10I1800PA.pdf
DHG10I1800PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.33V
Load current: 10A
Max. forward impulse current: 60A
Power dissipation: 85W
Max. off-state voltage: 1.8kV
Reverse recovery time: 300ns
Features of semiconductor devices: fast switching
Case: TO220AC
Semiconductor structure: single diode
Type of diode: rectifying
Kind of package: tube
Mounting: THT
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.85 EUR
23+3.12 EUR
50+2.56 EUR
Mindestbestellmenge: 19
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DAA10EM1800PZ-TUB DAA10EM1800PZ.pdf
DAA10EM1800PZ-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.14V; 100W
Max. forward voltage: 1.14V
Load current: 10A
Max. forward impulse current: 130A
Power dissipation: 100W
Max. off-state voltage: 1.8kV
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Semiconductor structure: single diode
Type of diode: rectifying
Kind of package: tube
Mounting: SMD
Produkt ist nicht verfügbar
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DAA10EM1800PZ-TRL media?resourcetype=datasheets&itemid=8b1378fb-444d-4854-bf2e-b3d297066d3b&filename=Littelfuse-Power-Semiconductors-DAA10EM1800PZ-Datasheet
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; D2PAK,TO263AB; Ufmax: 1.21V
Max. forward voltage: 1.21V
Load current: 10A
Max. forward impulse current: 160A
Max. off-state voltage: 1.8kV
Case: D2PAK; TO263AB
Semiconductor structure: single diode
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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DAA10P1800PZ-TRL
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; D2PAK,TO263AB; Ufmax: 1.26V
Max. forward voltage: 1.26V
Load current: 10A
Max. forward impulse current: 160A
Max. off-state voltage: 1.8kV
Case: D2PAK; TO263AB
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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DAA10P1800PZ-TUB DAA10P1800PZ.pdf
DAA10P1800PZ-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.53V; 100W
Max. forward voltage: 1.53V
Load current: 10A
Max. forward impulse current: 150A
Power dissipation: 100W
Max. off-state voltage: 1.8kV
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Semiconductor structure: double series
Type of diode: rectifying
Kind of package: tube
Mounting: SMD
Produkt ist nicht verfügbar
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DMA10P1800PZ-TRL
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; D2PAK,TO263AB; Ufmax: 1.26V
Max. forward voltage: 1.26V
Load current: 10A
Max. forward impulse current: 130A
Max. off-state voltage: 1.8kV
Case: D2PAK; TO263AB
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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DMA10P1800PZ-TUB DMA10P1800PZ.pdf
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.21V; 100W
Max. forward voltage: 1.21V
Load current: 10A
Max. forward impulse current: 100A
Power dissipation: 100W
Max. off-state voltage: 1.8kV
Case: TO263ABHV
Semiconductor structure: double series
Type of diode: rectifying
Kind of package: tube
Mounting: SMD
Produkt ist nicht verfügbar
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IXKH70N60C5 IXKH70N60C5.pdf
IXKH70N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Gate charge: 150nC
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Drain current: 70A
Kind of channel: enhancement
Drain-source voltage: 600V
Power dissipation: 625W
Case: TO247-3
Features of semiconductor devices: super junction coolmos
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Produkt ist nicht verfügbar
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IXFT70N20Q3 IXFH(T)70N20Q3.pdf
IXFT70N20Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268
Case: TO268
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 67nC
On-state resistance: 40mΩ
Drain current: 70A
Drain-source voltage: 200V
Power dissipation: 690W
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFT70N30Q3 IXFH(T)70N30Q3.pdf
IXFT70N30Q3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268
Case: TO268
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 98nC
On-state resistance: 54mΩ
Drain current: 70A
Drain-source voltage: 300V
Power dissipation: 830W
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CLA30E1200HB CLA30E1200HB.pdf
CLA30E1200HB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 28mA; TO247AD; THT; tube
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 28mA
Max. load current: 47A
Load current: 30A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: TO247AD
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.18 EUR
15+4.89 EUR
19+3.93 EUR
20+3.65 EUR
30+3.29 EUR
120+3.26 EUR
Mindestbestellmenge: 14
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DLA60I1200HA DLA60I1200HA.pdf
DLA60I1200HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 850A; TO247-2; 500W
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Max. forward impulse current: 850A
Kind of package: tube
Power dissipation: 500W
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.22 EUR
11+6.55 EUR
12+6.13 EUR
13+5.65 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
CLA40E1200HR CLA40E1200HR.pdf
CLA40E1200HR
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Max. load current: 63A
Max. forward impulse current: 555A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.34 EUR
7+11.43 EUR
10+9.51 EUR
Mindestbestellmenge: 6
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DCG10P1200HR DCG10P1200HR.pdf
DCG10P1200HR
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 12.5A; ISO247™; tube
Type of diode: Schottky rectifying
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12.5A
Semiconductor structure: double series
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 2.2V
Max. forward impulse current: 750A
Kind of package: tube
Technology: SiC
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+47.82 EUR
3+42.9 EUR
Mindestbestellmenge: 2
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