| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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MCD225-12io1 | IXYS |
 Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.2kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 220A Case: Y1-CU Max. forward voltage: 1.18V Max. forward impulse current: 8kA Electrical mounting: screw Max. load current: 400A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.79V Gate current: 150/220mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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MCD225-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 220A Case: Y1-CU Max. forward voltage: 1.18V Max. forward impulse current: 8kA Electrical mounting: screw Max. load current: 400A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.79V Gate current: 150/220mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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MCD225-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 220A Case: Y1-CU Max. forward voltage: 1.18V Max. forward impulse current: 8kA Electrical mounting: screw Max. load current: 400A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.79V Gate current: 150/220mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| MCD255-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 250A; Y1-CU; Ufmax: 1.08V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 250A Case: Y1-CU Max. forward voltage: 1.08V Max. forward impulse current: 9.2kA Electrical mounting: screw Max. load current: 450A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/220mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCD255-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 250A Case: Y1-CU Max. forward voltage: 1.08V Max. forward impulse current: 9.2kA Electrical mounting: screw Max. load current: 450A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/220mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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MCD310-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 320A Case: Y2-DCB Max. forward voltage: 1.09V Max. forward impulse current: 9.2kA Electrical mounting: screw Max. load current: 500A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/200mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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MCD310-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 320A Case: Y2-DCB Max. forward voltage: 1.09V Max. forward impulse current: 9.2kA Electrical mounting: screw Max. load current: 500A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/200mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| MCD162-16io1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.03V Max. forward impulse current: 6kA Electrical mounting: FASTON connectors; screw Max. load current: 300A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCD26-16IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; bulk Max. forward impulse current: 520A Gate current: 100/200mA Max. forward voltage: 1.27V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: FASTON connectors; screw Load current: 27A Max. load current: 42A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.85V Case: TO240AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCD26-14IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 27A; TO240AA; Ufmax: 1.27V; bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 27A Case: TO240AA Max. forward voltage: 1.27V Max. forward impulse current: 520A Electrical mounting: FASTON connectors; screw Max. load current: 42A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.85V Gate current: 100/200mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCMA260PD1800YB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 260A; Y4-M6; Ufmax: 1.06V; bulk Max. forward voltage: 1.06V Load current: 260A Max. load current: 408A Max. off-state voltage: 1.8kV Max. forward impulse current: 8.3kA Kind of package: bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Case: Y4-M6 Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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LBB110 | IXYS |
 Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS Case: DIP8 Mounting: THT Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Operating temperature: -40...85°C Turn-off time: 3ms Turn-on time: 3ms Control current max.: 50mA Body dimensions: 9.65x6.35x3.3mm Max. operating current: 120mA On-state resistance: 35Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Kind of output: MOSFET Relay variant: 1-phase; current source |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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LBB110S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS Case: DIP8 Mounting: SMT Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Operating temperature: -40...85°C Turn-off time: 3ms Turn-on time: 3ms Control current max.: 50mA Body dimensions: 9.65x6.35x3.3mm Max. operating current: 120mA On-state resistance: 35Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Kind of output: MOSFET Relay variant: 1-phase; current source |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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LBB110P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS Case: DIP8 Mounting: SMT Contacts configuration: SPST-NC x2 Kind of output: MOSFET Type of relay: solid state Operating temperature: -40...85°C Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.66x6.35x2.16mm Control current max.: 50mA Max. operating current: 120mA On-state resistance: 35Ω Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source Insulation voltage: 3.75kV Manufacturer series: OptoMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| LBB110PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS Case: DIP8 Mounting: SMT Contacts configuration: SPST-NC x2 Kind of output: MOSFET Type of relay: solid state Operating temperature: -40...85°C Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.66x6.35x2.16mm Control current max.: 50mA Max. operating current: 120mA On-state resistance: 35Ω Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source Insulation voltage: 3.75kV Manufacturer series: OptoMOS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| LBB110STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS Case: DIP8 Mounting: SMT Contacts configuration: SPST-NC x2 Kind of output: MOSFET Type of relay: solid state Operating temperature: -40...85°C Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.65x6.35x3.3mm Control current max.: 50mA Max. operating current: 120mA On-state resistance: 35Ω Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source Insulation voltage: 3.75kV Manufacturer series: OptoMOS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| LF2136BTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Output current: -0.35...0.2A Operating temperature: -40...125°C Supply voltage: 10...20V Type of integrated circuit: driver Voltage class: 600V Kind of package: reel; tape Case: SO28 Kind of integrated circuit: gate driver; high-/low-side Number of channels: 6 Topology: IGBT three-phase bridge; MOSFET three-phase bridge Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IX2120B | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SO28 Output current: -2...2A Number of channels: 2 Mounting: SMD Operating temperature: -40...150°C Voltage class: 1.2kV Kind of package: tube Topology: IGBT half-bridge; MOSFET half-bridge Supply voltage: 15...20V |
auf Bestellung 230 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA130N10T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO263 On-state resistance: 10.1mΩ Mounting: SMD Gate charge: 130nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTN30N100L | IXYS |
Category: Transistor modules Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Pulsed drain current: 70A Power dissipation: 800W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.45Ω Gate charge: 545nC Kind of channel: enhancement Semiconductor structure: single transistor Reverse recovery time: 1µs Technology: Linear™ Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| IXTB30N100L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Power dissipation: 800W Case: PLUS264™ On-state resistance: 0.45Ω Mounting: THT Gate charge: 545nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 1µs Features of semiconductor devices: linear power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IXTA130N10T-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Pulsed drain current: 350A Power dissipation: 360W Case: TO263 Gate-source voltage: ±30V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 104nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 77ns Technology: TrenchMV™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXFP130N10T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO220AB On-state resistance: 10.1mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTP130N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO220AB On-state resistance: 9.1mΩ Mounting: THT Gate charge: 104nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 67ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| IXTA130N10T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Pulsed drain current: 350A Power dissipation: 360W Case: TO263 Gate-source voltage: ±30V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 104nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 77ns Technology: TrenchMV™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IXTA130N10T7 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Pulsed drain current: 350A Power dissipation: 360W Case: TO263-7 Gate-source voltage: ±20V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 104nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 77ns Technology: TrenchMV™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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DSP25-12AT-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A Max. off-state voltage: 1.2kV Load current: 25A Semiconductor structure: double series Case: D3PAK Type of diode: rectifying Mounting: SMD Max. forward impulse current: 0.3kA Max. forward voltage: 1.16V Power dissipation: 160W |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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| LIA136 | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: THT Kind of output: isolation amplifier Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| LIA136S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: SMD Kind of output: isolation amplifier Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| LIA135 | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: THT Kind of output: isolation amplifier Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| LIA136STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: SMD Kind of output: isolation amplifier Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXGA48N60A3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 300W Case: TO263 Mounting: SMD Gate charge: 110nC Kind of package: tube Collector current: 48A Collector-emitter voltage: 600V Pulsed collector current: 300A Turn-on time: 54ns Turn-off time: 925ns Gate-emitter voltage: ±20V |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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PLA192S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| PLA192STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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CPC1708J | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; OptoMOS; 0.08Ω Mounting: THT Control current max.: 50mA On-state resistance: 80mΩ Type of relay: solid state Manufacturer series: OptoMOS Relay variant: current source Kind of output: MOSFET Body dimensions: 19.91x20.88x5.03mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 20ms Switched voltage: max. 60V DC Case: i4-pac Max. operating current: 5350mA Turn-off time: 5ms |
auf Bestellung 142 Stücke: Lieferzeit 14-21 Tag (e) |
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| VHFD29-16IO1 | IXYS |
Category: Single phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; Igt: 65mA Type of bridge rectifier: half-controlled Max. off-state voltage: 1.6kV Load current: 32A Max. forward impulse current: 0.44kA Gate current: 65mA Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Case: V1-A-Pack Leads: connectors Leads dimensions: 2x0.5mm Features of semiconductor devices: field diodes; freewheelling diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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DSSK48-003BS | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 30V; 25Ax2; reel,tape; 105W Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 30V Load current: 25A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.35V Max. forward impulse current: 0.3kA Kind of package: reel; tape Power dissipation: 105W |
auf Bestellung 549 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH75N10L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns Type of transistor: N-MOSFET Technology: Linear L2™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 400W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: THT Gate charge: 215nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 180ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXYH50N120C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 625W Case: TO247-3 Mounting: THT Gate charge: 142nC Kind of package: tube Turn-on time: 96ns Turn-off time: 0.22µs Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 210A Collector-emitter voltage: 1.2kV |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGN50N120C3H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: IGBT Power dissipation: 460W Technology: GenX3™; PT Pulsed collector current: 240A Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Case: SOT227B Gate-emitter voltage: ±20V Collector current: 50A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXYH50N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 750W Case: TO247-3 Mounting: THT Gate charge: 142nC Kind of package: tube Turn-on time: 96ns Turn-off time: 0.22µs Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXYR50N120C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 290W Case: PLUS247™ Mounting: THT Gate charge: 142nC Kind of package: tube Turn-on time: 96ns Turn-off time: 0.22µs Gate-emitter voltage: ±20V Collector current: 32A Pulsed collector current: 210A Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXGH50N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 460W Case: TO247-3 Mounting: THT Gate charge: 196nC Kind of package: tube Turn-on time: 55ns Turn-off time: 485ns Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 250A Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXGK50N120C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 460W Case: TO264 Mounting: THT Gate charge: 196nC Kind of package: tube Turn-on time: 60ns Turn-off time: 485ns Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXGX50N120C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™ Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 460W Gate charge: 196nC Technology: GenX3™; PT Pulsed collector current: 240A Type of transistor: IGBT Turn-on time: 60ns Kind of package: tube Case: PLUS247™ Turn-off time: 485ns Gate-emitter voltage: ±20V Collector current: 50A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTH24N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Gate charge: 36nC Technology: X2-Class Power dissipation: 390W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| IXYH16N250C | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3 Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 2.5kV Collector current: 16A Power dissipation: 500W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 64A Mounting: THT Gate charge: 97nC Kind of package: tube Turn-on time: 14ns Turn-off time: 260ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXYH16N250CV1HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 2.5kV Collector current: 16A Power dissipation: 500W Case: TO247HV Gate-emitter voltage: ±20V Pulsed collector current: 126A Mounting: THT Gate charge: 97nC Kind of package: tube Turn-on time: 39ns Turn-off time: 541ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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CPC1788J | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 1.2A Switched voltage: max. 1kV DC Manufacturer series: OptoMOS Relay variant: current source On-state resistance: 1.25Ω Mounting: THT Case: ISOPLUS264™ Operating temperature: -40...85°C Kind of output: MOSFET Body dimensions: 19.91x26.16x5.03mm Insulation voltage: 2.5kV Turn-on time: 20ms Turn-off time: 5ms Control current max.: 100mA |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1705Y | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 3250mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω Mounting: THT Control current max.: 50mA On-state resistance: 90mΩ Type of relay: solid state Manufacturer series: OptoMOS Relay variant: current source Kind of output: MOSFET Body dimensions: 21.08x10.16x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NC Insulation voltage: 2.5kV Turn-on time: 2ms Switched voltage: max. 60V DC Case: SOP4 Max. operating current: 3.25A Turn-off time: 12ms |
auf Bestellung 81 Stücke: Lieferzeit 14-21 Tag (e) |
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PLA171P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 0.1A Switched voltage: max. 800V AC; max. 800V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Operating temperature: -40...85°C Kind of output: MOSFET Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 5kV Turn-on time: 5ms Turn-off time: 5ms Control current max.: 50mA |
auf Bestellung 132 Stücke: Lieferzeit 14-21 Tag (e) |
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PLB171P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 80mA Switched voltage: max. 800V AC; max. 800V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 90Ω Mounting: SMT Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 5kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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PLA134 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 350mA Switched voltage: max. 100V AC; max. 100V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 3Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Kind of output: MOSFET Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Control current max.: 50mA |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1981Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC Manufacturer series: OptoMOS Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 10ms Switched voltage: max. 1kV AC Case: SIP4 Max. operating current: 180mA Turn-off time: 5ms Control current max.: 50mA On-state resistance: 18Ω Type of relay: solid state Mounting: THT Relay variant: 1-phase Kind of output: MOSFET |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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IXBF42N300 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c Type of transistor: IGBT Technology: BiMOSFET™ Collector-emitter voltage: 3kV Collector current: 24A Power dissipation: 240W Case: ISOPLUS i4-pac™ x024c Gate-emitter voltage: ±20V Pulsed collector current: 380A Mounting: THT Gate charge: 200nC Kind of package: tube Turn-on time: 652ns Turn-off time: 950ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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LCA210LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 85mA Mounting: SMT Manufacturer series: OptoMOS Switched voltage: max. 350V AC; max. 350V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 3ms Control current max.: 100mA On-state resistance: 35Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| LCA220STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC Type of relay: solid state Contacts configuration: SPDT Max. operating current: 120mA Mounting: SMT Manufacturer series: OptoMOS Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 100mA On-state resistance: 20Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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LCA210L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 85mA Mounting: THT Manufacturer series: OptoMOS Switched voltage: max. 350V AC; max. 350V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 3ms Control current max.: 100mA On-state resistance: 35Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| LCA210LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 85mA Mounting: SMT Manufacturer series: OptoMOS Switched voltage: max. 350V AC; max. 350V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 3ms Control current max.: 100mA On-state resistance: 35Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| LCA210STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 85mA Mounting: SMT Manufacturer series: OptoMOS Switched voltage: max. 350V AC; max. 350V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 3ms Control current max.: 100mA On-state resistance: 35Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MCD225-12io1 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCD225-16io1 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCD225-18io1 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCD255-14io1 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCD255-18io1 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCD310-12io1 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCD310-14io1 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCD162-16io1B |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCD26-16IO1B |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. forward impulse current: 520A
Gate current: 100/200mA
Max. forward voltage: 1.27V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 27A
Max. load current: 42A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. forward impulse current: 520A
Gate current: 100/200mA
Max. forward voltage: 1.27V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 27A
Max. load current: 42A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCD26-14IO1B |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Max. load current: 42A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 100/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Max. load current: 42A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 100/200mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCMA260PD1800YB |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Max. forward voltage: 1.06V
Load current: 260A
Max. load current: 408A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 8.3kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y4-M6
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Max. forward voltage: 1.06V
Load current: 260A
Max. load current: 408A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 8.3kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y4-M6
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LBB110 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LBB110S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LBB110P |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LBB110PTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| LBB110STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| LF2136BTR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Type of integrated circuit: driver
Voltage class: 600V
Kind of package: reel; tape
Case: SO28
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Type of integrated circuit: driver
Voltage class: 600V
Kind of package: reel; tape
Case: SO28
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| IX2120B |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...150°C
Voltage class: 1.2kV
Kind of package: tube
Topology: IGBT half-bridge; MOSFET half-bridge
Supply voltage: 15...20V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...150°C
Voltage class: 1.2kV
Kind of package: tube
Topology: IGBT half-bridge; MOSFET half-bridge
Supply voltage: 15...20V
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 34+ | 2.55 EUR |
| 35+ | 2.45 EUR |
| 36+ | 2.4 EUR |
| IXFA130N10T2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.56 EUR |
| 13+ | 6.57 EUR |
| 50+ | 4.94 EUR |
| 100+ | 4.71 EUR |
| IXTN30N100L |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.45Ω
Gate charge: 545nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Technology: Linear™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.45Ω
Gate charge: 545nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Technology: Linear™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTB30N100L |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA130N10T-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFP130N10T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTP130N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 67ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 67ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA130N10T |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA130N10T7 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSP25-12AT-TUB |
|
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Max. off-state voltage: 1.2kV
Load current: 25A
Semiconductor structure: double series
Case: D3PAK
Type of diode: rectifying
Mounting: SMD
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.16V
Power dissipation: 160W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Max. off-state voltage: 1.2kV
Load current: 25A
Semiconductor structure: double series
Case: D3PAK
Type of diode: rectifying
Mounting: SMD
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.16V
Power dissipation: 160W
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 10.33 EUR |
| 10+ | 9.31 EUR |
| 11+ | 8.22 EUR |
| 30+ | 7.52 EUR |
| LIA136 |
|
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LIA136S |
|
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LIA135 |
|
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LIA136STR |
|
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXGA48N60A3 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Collector current: 48A
Collector-emitter voltage: 600V
Pulsed collector current: 300A
Turn-on time: 54ns
Turn-off time: 925ns
Gate-emitter voltage: ±20V
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Collector current: 48A
Collector-emitter voltage: 600V
Pulsed collector current: 300A
Turn-on time: 54ns
Turn-off time: 925ns
Gate-emitter voltage: ±20V
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.6 EUR |
| 13+ | 6.81 EUR |
| 16+ | 5.57 EUR |
| 50+ | 4.91 EUR |
| PLA192S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PLA192STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| CPC1708J |
|
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; OptoMOS; 0.08Ω
Mounting: THT
Control current max.: 50mA
On-state resistance: 80mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 60V DC
Case: i4-pac
Max. operating current: 5350mA
Turn-off time: 5ms
Category: DC Solid State Relays
Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; OptoMOS; 0.08Ω
Mounting: THT
Control current max.: 50mA
On-state resistance: 80mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 60V DC
Case: i4-pac
Max. operating current: 5350mA
Turn-off time: 5ms
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 28.66 EUR |
| 10+ | 24.7 EUR |
| 25+ | 23.19 EUR |
| 100+ | 20.88 EUR |
| VHFD29-16IO1 |
|
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 0.44kA
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 0.44kA
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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| DSSK48-003BS |
|
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 30V; 25Ax2; reel,tape; 105W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 30V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.35V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Power dissipation: 105W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 30V; 25Ax2; reel,tape; 105W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 30V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.35V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Power dissipation: 105W
auf Bestellung 549 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 61+ | 1.39 EUR |
| 64+ | 1.34 EUR |
| 66+ | 1.3 EUR |
| 100+ | 1.27 EUR |
| IXTH75N10L2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXYH50N120C3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 210A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 210A
Collector-emitter voltage: 1.2kV
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 15.32 EUR |
| 10+ | 14.28 EUR |
| 30+ | 14.01 EUR |
| IXGN50N120C3H1 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Power dissipation: 460W
Technology: GenX3™; PT
Pulsed collector current: 240A
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 50A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Power dissipation: 460W
Technology: GenX3™; PT
Pulsed collector current: 240A
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 50A
Produkt ist nicht verfügbar
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| IXYH50N120C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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| IXYR50N120C3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 290W
Case: PLUS247™
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 32A
Pulsed collector current: 210A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 290W
Case: PLUS247™
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 32A
Pulsed collector current: 210A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGH50N120C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 460W
Case: TO247-3
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 250A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 460W
Case: TO247-3
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 250A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXGK50N120C3H1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 460W
Case: TO264
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 460W
Case: TO264
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGX50N120C3H1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 460W
Gate charge: 196nC
Technology: GenX3™; PT
Pulsed collector current: 240A
Type of transistor: IGBT
Turn-on time: 60ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 50A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 460W
Gate charge: 196nC
Technology: GenX3™; PT
Pulsed collector current: 240A
Type of transistor: IGBT
Turn-on time: 60ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH24N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 36nC
Technology: X2-Class
Power dissipation: 390W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 36nC
Technology: X2-Class
Power dissipation: 390W
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXYH16N250C |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 64A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 14ns
Turn-off time: 260ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 64A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 14ns
Turn-off time: 260ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXYH16N250CV1HV |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 126A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 541ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 126A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 541ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| CPC1788J |
|
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Switched voltage: max. 1kV DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 1.25Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Control current max.: 100mA
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Switched voltage: max. 1kV DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 1.25Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Control current max.: 100mA
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 35.6 EUR |
| CPC1705Y |
|
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 3250mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Mounting: THT
Control current max.: 50mA
On-state resistance: 90mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Insulation voltage: 2.5kV
Turn-on time: 2ms
Switched voltage: max. 60V DC
Case: SOP4
Max. operating current: 3.25A
Turn-off time: 12ms
Category: DC Solid State Relays
Description: Relay: solid state; 3250mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Mounting: THT
Control current max.: 50mA
On-state resistance: 90mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Insulation voltage: 2.5kV
Turn-on time: 2ms
Switched voltage: max. 60V DC
Case: SOP4
Max. operating current: 3.25A
Turn-off time: 12ms
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 12.3 EUR |
| 10+ | 10.96 EUR |
| 25+ | 9.94 EUR |
| PLA171P |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 9.96 EUR |
| 10+ | 9.58 EUR |
| 50+ | 7.96 EUR |
| 100+ | 7.37 EUR |
| PLB171P |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 15.9 EUR |
| 10+ | 12.7 EUR |
| PLA134 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 350mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 3Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 350mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 3Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 26.25 EUR |
| CPC1981Y |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 10ms
Switched voltage: max. 1kV AC
Case: SIP4
Max. operating current: 180mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 18Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 10ms
Switched voltage: max. 1kV AC
Case: SIP4
Max. operating current: 180mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 18Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Kind of output: MOSFET
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 21.28 EUR |
| IXBF42N300 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 3kV
Collector current: 24A
Power dissipation: 240W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 652ns
Turn-off time: 950ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 3kV
Collector current: 24A
Power dissipation: 240W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 652ns
Turn-off time: 950ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LCA210LS |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LCA220STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LCA210L |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LCA210LSTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LCA210STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH