| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| IXTH96N25T | IXYS |
IXTH96N25T THT N channel transistors |
auf Bestellung 218 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTH96P085T | IXYS |
IXTH96P085T THT P channel transistors |
auf Bestellung 421 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTK120N25P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264 Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO264 Technology: Polar™ Mounting: THT Kind of package: tube Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Gate charge: 185nC Reverse recovery time: 200ns On-state resistance: 24mΩ Gate-source voltage: ±20V Power dissipation: 700W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 279 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTK170N10P | IXYS |
IXTK170N10P THT N channel transistors |
auf Bestellung 17 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTK180N15P | IXYS |
IXTK180N15P THT N channel transistors |
auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTK200N10P | IXYS |
IXTK200N10P THT N channel transistors |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTK210P10T | IXYS |
IXTK210P10T THT P channel transistors |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTK32P60P | IXYS |
IXTK32P60P THT P channel transistors |
auf Bestellung 213 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTK82N25P | IXYS |
IXTK82N25P THT N channel transistors |
auf Bestellung 287 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTK90P20P | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; TO264 Case: TO264 Type of transistor: P-MOSFET Mounting: THT Technology: PolarP™ Kind of package: tube Drain-source voltage: -200V Drain current: -90A Reverse recovery time: 315ns Gate charge: 205nC On-state resistance: 44mΩ Power dissipation: 890W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP01N100D | IXYS |
IXTP01N100D THT N channel transistors |
auf Bestellung 294 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP08N100D2 | IXYS |
IXTP08N100D2 THT N channel transistors |
auf Bestellung 522 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP08N100P | IXYS |
IXTP08N100P THT N channel transistors |
auf Bestellung 290 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP08N50D2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.8A Power dissipation: 60W Case: TO220AB On-state resistance: 4.6Ω Mounting: THT Gate charge: 312nC Kind of package: tube Kind of channel: depletion Reverse recovery time: 11ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 263 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP100N04T2 | IXYS |
IXTP100N04T2 THT N channel transistors |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP10P15T | IXYS |
IXTP10P15T THT P channel transistors |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP10P50P | IXYS |
IXTP10P50P THT P channel transistors |
auf Bestellung 55 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP110N055T2 | IXYS |
IXTP110N055T2 THT N channel transistors |
auf Bestellung 297 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP120P065T | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns Kind of channel: enhancement Type of transistor: P-MOSFET Case: TO220AB Technology: TrenchP™ Mounting: THT Kind of package: tube Polarisation: unipolar Drain-source voltage: -65V Drain current: -120A Gate charge: 185nC Reverse recovery time: 53ns On-state resistance: 10mΩ Gate-source voltage: ±15V Power dissipation: 298W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 256 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP12N50P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Gate charge: 29nC Reverse recovery time: 300ns On-state resistance: 0.5Ω Kind of channel: enhancement Technology: Polar™ Drain current: 12A Gate-source voltage: ±30V Drain-source voltage: 500V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 282 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP12N70X2 | IXYS |
IXTP12N70X2 THT N channel transistors |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP130N15X4 | IXYS |
IXTP130N15X4 THT N channel transistors |
auf Bestellung 283 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP140P05T | IXYS |
IXTP140P05T THT P channel transistors |
auf Bestellung 211 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP14N60X2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Pulsed drain current: 18A Power dissipation: 180W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 16.7nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP150N15X4 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Type of transistor: N-MOSFET Case: TO220AB Kind of package: tube Mounting: THT Polarisation: unipolar Gate charge: 105nC Reverse recovery time: 100ns On-state resistance: 7.2mΩ Power dissipation: 480W Drain current: 150A Drain-source voltage: 150V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 205 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP15N50L2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 15A Power dissipation: 300W Case: TO220AB On-state resistance: 0.48Ω Mounting: THT Gate charge: 123nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 570ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP15P15T | IXYS |
IXTP15P15T THT P channel transistors |
auf Bestellung 130 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP160N10T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB Type of transistor: N-MOSFET Technology: Trench™ Case: TO220AB Kind of package: tube Polarisation: unipolar Gate charge: 132nC Reverse recovery time: 60ns On-state resistance: 7mΩ Gate-source voltage: ±20V Drain current: 160A Drain-source voltage: 100V Power dissipation: 430W Kind of channel: enhancement Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 254 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP16N50P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 400ns Technology: PolarHT™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 230 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP170N075T2 | IXYS |
IXTP170N075T2 THT N channel transistors |
auf Bestellung 283 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP18P10T | IXYS |
IXTP18P10T THT P channel transistors |
auf Bestellung 342 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP1R6N100D2 | IXYS |
IXTP1R6N100D2 THT N channel transistors |
auf Bestellung 294 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP220N04T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 220A Power dissipation: 360W Case: TO220AB On-state resistance: 3.5mΩ Mounting: THT Gate charge: 112nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 45ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 278 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP230N075T2 | IXYS |
IXTP230N075T2 THT N channel transistors |
auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP24N65X2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 390W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Technology: X2-Class Anzahl je Verpackung: 1 Stücke |
auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP24N65X2M | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 37W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Technology: X2-Class Anzahl je Verpackung: 1 Stücke |
auf Bestellung 86 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP24P085T | IXYS |
IXTP24P085T THT P channel transistors |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP260N055T2 | IXYS | IXTP260N055T2 THT N channel transistors |
auf Bestellung 308 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP26P10T | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns Type of transistor: P-MOSFET Drain-source voltage: -100V Drain current: -26A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: THT Kind of channel: enhancement Polarisation: unipolar Technology: TrenchP™ Reverse recovery time: 70ns Kind of package: tube Gate charge: 52nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP26P20P | IXYS |
IXTP26P20P THT P channel transistors |
auf Bestellung 508 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP270N04T4 | IXYS |
IXTP270N04T4 THT N channel transistors |
auf Bestellung 59 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP2R4N120P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO220AB Technology: Polar™ Mounting: THT Features of semiconductor devices: standard power mosfet Kind of package: tube Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 2.4A Gate charge: 37nC Reverse recovery time: 920ns On-state resistance: 7.5Ω Pulsed drain current: 6A Gate-source voltage: ±30V Power dissipation: 125W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 307 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP32P05T | IXYS |
IXTP32P05T THT P channel transistors |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP32P20T | IXYS |
IXTP32P20T THT P channel transistors |
auf Bestellung 250 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP36P15P | IXYS |
IXTP36P15P THT P channel transistors |
auf Bestellung 203 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP3N100D2 | IXYS |
IXTP3N100D2 THT N channel transistors |
auf Bestellung 154 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP3N120 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO220AB Mounting: THT Kind of package: tube Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Gate charge: 42nC Reverse recovery time: 700ns On-state resistance: 4.5Ω Gate-source voltage: ±20V Power dissipation: 200W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 263 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP44N10T | IXYS |
IXTP44N10T THT N channel transistors |
auf Bestellung 157 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP44P15T | IXYS |
IXTP44P15T THT P channel transistors |
auf Bestellung 289 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP450P2 | IXYS |
IXTP450P2 THT N channel transistors |
auf Bestellung 141 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP48N20T | IXYS |
IXTP48N20T THT N channel transistors |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP48P05T | IXYS |
IXTP48P05T THT P channel transistors |
auf Bestellung 295 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP4N65X2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Power dissipation: 80W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 8.3nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 160ns Technology: X2-Class Anzahl je Verpackung: 1 Stücke |
auf Bestellung 499 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP4N80P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.6A Pulsed drain current: 8A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 3.4Ω Mounting: THT Gate charge: 14.2nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 560ns Features of semiconductor devices: standard power mosfet Anzahl je Verpackung: 1 Stücke |
auf Bestellung 314 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP50N20P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 154 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP50N25T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO220AB On-state resistance: 60mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 166ns Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
auf Bestellung 289 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP60N10T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns Type of transistor: N-MOSFET Features of semiconductor devices: thrench gate power mosfet Case: TO220AB Kind of package: tube Polarisation: unipolar Gate charge: 49nC Reverse recovery time: 59ns On-state resistance: 18mΩ Drain current: 60A Drain-source voltage: 100V Power dissipation: 176W Kind of channel: enhancement Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 251 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP60N20T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns Type of transistor: N-MOSFET Features of semiconductor devices: thrench gate power mosfet Case: TO220AB Kind of package: tube Polarisation: unipolar Gate charge: 73nC Reverse recovery time: 118ns On-state resistance: 40mΩ Drain current: 60A Drain-source voltage: 200V Power dissipation: 500W Kind of channel: enhancement Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP62N15P | IXYS |
IXTP62N15P THT N channel transistors |
auf Bestellung 235 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP6N100D2 | IXYS |
IXTP6N100D2 THT N channel transistors |
auf Bestellung 350 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTH96N25T |
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Hersteller: IXYS
IXTH96N25T THT N channel transistors
IXTH96N25T THT N channel transistors
auf Bestellung 218 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.12 EUR |
| 12+ | 6.22 EUR |
| 13+ | 5.88 EUR |
| IXTH96P085T |
![]() |
Hersteller: IXYS
IXTH96P085T THT P channel transistors
IXTH96P085T THT P channel transistors
auf Bestellung 421 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.69 EUR |
| 11+ | 6.65 EUR |
| 30+ | 6.52 EUR |
| IXTK120N25P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Technology: Polar™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Gate charge: 185nC
Reverse recovery time: 200ns
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Power dissipation: 700W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Technology: Polar™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Gate charge: 185nC
Reverse recovery time: 200ns
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Power dissipation: 700W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 279 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.66 EUR |
| 10+ | 13.74 EUR |
| IXTK170N10P |
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Hersteller: IXYS
IXTK170N10P THT N channel transistors
IXTK170N10P THT N channel transistors
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 12.9 EUR |
| 7+ | 10.4 EUR |
| IXTK180N15P |
![]() |
Hersteller: IXYS
IXTK180N15P THT N channel transistors
IXTK180N15P THT N channel transistors
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 19.95 EUR |
| 5+ | 14.73 EUR |
| 6+ | 13.93 EUR |
| IXTK200N10P |
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Hersteller: IXYS
IXTK200N10P THT N channel transistors
IXTK200N10P THT N channel transistors
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.43 EUR |
| 6+ | 13.63 EUR |
| 25+ | 13.34 EUR |
| IXTK210P10T |
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Hersteller: IXYS
IXTK210P10T THT P channel transistors
IXTK210P10T THT P channel transistors
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 2+ | 35.75 EUR |
| 25+ | 28.14 EUR |
| IXTK32P60P |
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Hersteller: IXYS
IXTK32P60P THT P channel transistors
IXTK32P60P THT P channel transistors
auf Bestellung 213 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 19.98 EUR |
| 25+ | 19.85 EUR |
| IXTK82N25P |
![]() |
Hersteller: IXYS
IXTK82N25P THT N channel transistors
IXTK82N25P THT N channel transistors
auf Bestellung 287 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 13.84 EUR |
| 8+ | 9.05 EUR |
| IXTK90P20P |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; TO264
Case: TO264
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -90A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 44mΩ
Power dissipation: 890W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; TO264
Case: TO264
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -90A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 44mΩ
Power dissipation: 890W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 23.09 EUR |
| 5+ | 19.56 EUR |
| 10+ | 19.33 EUR |
| IXTP01N100D |
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Hersteller: IXYS
IXTP01N100D THT N channel transistors
IXTP01N100D THT N channel transistors
auf Bestellung 294 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.45 EUR |
| 12+ | 6.21 EUR |
| 13+ | 5.86 EUR |
| 50+ | 5.75 EUR |
| IXTP08N100D2 |
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Hersteller: IXYS
IXTP08N100D2 THT N channel transistors
IXTP08N100D2 THT N channel transistors
auf Bestellung 522 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.36 EUR |
| 35+ | 2.09 EUR |
| 37+ | 1.97 EUR |
| IXTP08N100P |
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Hersteller: IXYS
IXTP08N100P THT N channel transistors
IXTP08N100P THT N channel transistors
auf Bestellung 290 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.07 EUR |
| 39+ | 1.86 EUR |
| 41+ | 1.76 EUR |
| IXTP08N50D2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 263 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.62 EUR |
| 24+ | 3.05 EUR |
| 30+ | 2.43 EUR |
| 50+ | 1.9 EUR |
| IXTP100N04T2 |
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Hersteller: IXYS
IXTP100N04T2 THT N channel transistors
IXTP100N04T2 THT N channel transistors
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.43 EUR |
| 41+ | 1.76 EUR |
| 43+ | 1.67 EUR |
| IXTP10P15T |
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Hersteller: IXYS
IXTP10P15T THT P channel transistors
IXTP10P15T THT P channel transistors
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.25 EUR |
| 29+ | 2.46 EUR |
| 500+ | 1.53 EUR |
| IXTP10P50P |
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Hersteller: IXYS
IXTP10P50P THT P channel transistors
IXTP10P50P THT P channel transistors
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.91 EUR |
| 14+ | 5.32 EUR |
| 15+ | 5.03 EUR |
| IXTP110N055T2 |
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Hersteller: IXYS
IXTP110N055T2 THT N channel transistors
IXTP110N055T2 THT N channel transistors
auf Bestellung 297 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.25 EUR |
| 34+ | 2.13 EUR |
| 36+ | 2.02 EUR |
| 50+ | 1.93 EUR |
| IXTP120P065T |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 256 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.59 EUR |
| 13+ | 5.78 EUR |
| 50+ | 4.89 EUR |
| IXTP12N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 282 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.58 EUR |
| 23+ | 3.2 EUR |
| 26+ | 2.83 EUR |
| 50+ | 2.56 EUR |
| 250+ | 2.52 EUR |
| IXTP12N70X2 |
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Hersteller: IXYS
IXTP12N70X2 THT N channel transistors
IXTP12N70X2 THT N channel transistors
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 7.95 EUR |
| 13+ | 5.51 EUR |
| 50+ | 3.86 EUR |
| IXTP130N15X4 |
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Hersteller: IXYS
IXTP130N15X4 THT N channel transistors
IXTP130N15X4 THT N channel transistors
auf Bestellung 283 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.11 EUR |
| 13+ | 5.52 EUR |
| 14+ | 5.22 EUR |
| IXTP140P05T |
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Hersteller: IXYS
IXTP140P05T THT P channel transistors
IXTP140P05T THT P channel transistors
auf Bestellung 211 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.85 EUR |
| 11+ | 6.52 EUR |
| 12+ | 6.16 EUR |
| IXTP14N60X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 8.94 EUR |
| 10+ | 7.15 EUR |
| 50+ | 3.63 EUR |
| IXTP150N15X4 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 100ns
On-state resistance: 7.2mΩ
Power dissipation: 480W
Drain current: 150A
Drain-source voltage: 150V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 100ns
On-state resistance: 7.2mΩ
Power dissipation: 480W
Drain current: 150A
Drain-source voltage: 150V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 205 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.44 EUR |
| 8+ | 9.44 EUR |
| 10+ | 7.74 EUR |
| 25+ | 6.61 EUR |
| IXTP15N50L2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.1 EUR |
| 9+ | 8.31 EUR |
| 10+ | 7.35 EUR |
| IXTP15P15T |
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Hersteller: IXYS
IXTP15P15T THT P channel transistors
IXTP15P15T THT P channel transistors
auf Bestellung 130 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.3 EUR |
| 24+ | 3.07 EUR |
| 25+ | 2.9 EUR |
| IXTP160N10T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Type of transistor: N-MOSFET
Technology: Trench™
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 132nC
Reverse recovery time: 60ns
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Drain current: 160A
Drain-source voltage: 100V
Power dissipation: 430W
Kind of channel: enhancement
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Type of transistor: N-MOSFET
Technology: Trench™
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 132nC
Reverse recovery time: 60ns
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Drain current: 160A
Drain-source voltage: 100V
Power dissipation: 430W
Kind of channel: enhancement
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 254 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.79 EUR |
| 50+ | 4.46 EUR |
| IXTP16N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 230 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 5.11 EUR |
| 23+ | 3.22 EUR |
| 50+ | 3.1 EUR |
| IXTP170N075T2 |
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Hersteller: IXYS
IXTP170N075T2 THT N channel transistors
IXTP170N075T2 THT N channel transistors
auf Bestellung 283 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.53 EUR |
| 23+ | 3.17 EUR |
| 24+ | 3 EUR |
| 100+ | 2.89 EUR |
| IXTP18P10T |
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Hersteller: IXYS
IXTP18P10T THT P channel transistors
IXTP18P10T THT P channel transistors
auf Bestellung 342 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.09 EUR |
| 41+ | 1.76 EUR |
| 43+ | 1.67 EUR |
| IXTP1R6N100D2 |
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Hersteller: IXYS
IXTP1R6N100D2 THT N channel transistors
IXTP1R6N100D2 THT N channel transistors
auf Bestellung 294 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 5 EUR |
| 26+ | 2.76 EUR |
| 28+ | 2.6 EUR |
| IXTP220N04T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 278 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.59 EUR |
| 21+ | 3.52 EUR |
| 50+ | 2.89 EUR |
| IXTP230N075T2 |
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Hersteller: IXYS
IXTP230N075T2 THT N channel transistors
IXTP230N075T2 THT N channel transistors
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.68 EUR |
| 14+ | 5.19 EUR |
| IXTP24N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.12 EUR |
| 50+ | 4.45 EUR |
| 100+ | 4.2 EUR |
| IXTP24N65X2M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
Anzahl je Verpackung: 1 Stücke
auf Bestellung 86 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.71 EUR |
| 17+ | 4.22 EUR |
| 50+ | 3.3 EUR |
| IXTP24P085T |
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Hersteller: IXYS
IXTP24P085T THT P channel transistors
IXTP24P085T THT P channel transistors
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.86 EUR |
| 41+ | 1.76 EUR |
| 43+ | 1.67 EUR |
| 500+ | 1.66 EUR |
| IXTP260N055T2 |
Hersteller: IXYS
IXTP260N055T2 THT N channel transistors
IXTP260N055T2 THT N channel transistors
auf Bestellung 308 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.26 EUR |
| 14+ | 5.19 EUR |
| IXTP26P10T |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
Technology: TrenchP™
Reverse recovery time: 70ns
Kind of package: tube
Gate charge: 52nC
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
Technology: TrenchP™
Reverse recovery time: 70ns
Kind of package: tube
Gate charge: 52nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 8.94 EUR |
| 10+ | 7.15 EUR |
| 50+ | 1.9 EUR |
| IXTP26P20P |
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Hersteller: IXYS
IXTP26P20P THT P channel transistors
IXTP26P20P THT P channel transistors
auf Bestellung 508 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.54 EUR |
| 13+ | 5.59 EUR |
| 14+ | 5.28 EUR |
| IXTP270N04T4 |
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Hersteller: IXYS
IXTP270N04T4 THT N channel transistors
IXTP270N04T4 THT N channel transistors
auf Bestellung 59 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.56 EUR |
| 23+ | 3.23 EUR |
| 24+ | 3.06 EUR |
| IXTP2R4N120P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Technology: Polar™
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Gate charge: 37nC
Reverse recovery time: 920ns
On-state resistance: 7.5Ω
Pulsed drain current: 6A
Gate-source voltage: ±30V
Power dissipation: 125W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Technology: Polar™
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Gate charge: 37nC
Reverse recovery time: 920ns
On-state resistance: 7.5Ω
Pulsed drain current: 6A
Gate-source voltage: ±30V
Power dissipation: 125W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 307 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.26 EUR |
| 11+ | 6.79 EUR |
| 50+ | 5.61 EUR |
| 100+ | 4.96 EUR |
| 250+ | 4.83 EUR |
| IXTP32P05T |
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Hersteller: IXYS
IXTP32P05T THT P channel transistors
IXTP32P05T THT P channel transistors
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.11 EUR |
| 27+ | 2.65 EUR |
| 250+ | 1.69 EUR |
| IXTP32P20T |
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Hersteller: IXYS
IXTP32P20T THT P channel transistors
IXTP32P20T THT P channel transistors
auf Bestellung 250 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.14 EUR |
| 10+ | 7.31 EUR |
| IXTP36P15P |
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Hersteller: IXYS
IXTP36P15P THT P channel transistors
IXTP36P15P THT P channel transistors
auf Bestellung 203 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.07 EUR |
| 14+ | 5.32 EUR |
| 15+ | 5.03 EUR |
| 50+ | 4.9 EUR |
| IXTP3N100D2 |
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Hersteller: IXYS
IXTP3N100D2 THT N channel transistors
IXTP3N100D2 THT N channel transistors
auf Bestellung 154 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 5.96 EUR |
| 26+ | 2.76 EUR |
| 28+ | 2.62 EUR |
| 1000+ | 2.55 EUR |
| IXTP3N120 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Gate charge: 42nC
Reverse recovery time: 700ns
On-state resistance: 4.5Ω
Gate-source voltage: ±20V
Power dissipation: 200W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Gate charge: 42nC
Reverse recovery time: 700ns
On-state resistance: 4.5Ω
Gate-source voltage: ±20V
Power dissipation: 200W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 263 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.55 EUR |
| 10+ | 7.44 EUR |
| 50+ | 6.65 EUR |
| IXTP44N10T |
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Hersteller: IXYS
IXTP44N10T THT N channel transistors
IXTP44N10T THT N channel transistors
auf Bestellung 157 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.7 EUR |
| 57+ | 1.27 EUR |
| 60+ | 1.2 EUR |
| 1000+ | 1.17 EUR |
| IXTP44P15T |
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Hersteller: IXYS
IXTP44P15T THT P channel transistors
IXTP44P15T THT P channel transistors
auf Bestellung 289 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.02 EUR |
| 15+ | 5.02 EUR |
| 16+ | 4.75 EUR |
| 100+ | 4.58 EUR |
| IXTP450P2 |
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Hersteller: IXYS
IXTP450P2 THT N channel transistors
IXTP450P2 THT N channel transistors
auf Bestellung 141 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.86 EUR |
| 23+ | 3.17 EUR |
| 24+ | 2.99 EUR |
| 500+ | 2.87 EUR |
| IXTP48N20T |
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Hersteller: IXYS
IXTP48N20T THT N channel transistors
IXTP48N20T THT N channel transistors
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 5.98 EUR |
| 23+ | 3.13 EUR |
| 25+ | 2.96 EUR |
| IXTP48P05T |
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Hersteller: IXYS
IXTP48P05T THT P channel transistors
IXTP48P05T THT P channel transistors
auf Bestellung 295 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.42 EUR |
| 22+ | 3.32 EUR |
| 23+ | 3.13 EUR |
| IXTP4N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Technology: X2-Class
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Technology: X2-Class
Anzahl je Verpackung: 1 Stücke
auf Bestellung 499 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.06 EUR |
| 41+ | 1.74 EUR |
| 50+ | 1.63 EUR |
| IXTP4N80P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
Anzahl je Verpackung: 1 Stücke
auf Bestellung 314 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.09 EUR |
| 50+ | 1.94 EUR |
| 250+ | 1.82 EUR |
| IXTP50N20P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 154 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.89 EUR |
| 18+ | 4.02 EUR |
| 50+ | 3.55 EUR |
| 100+ | 3.35 EUR |
| 500+ | 3.09 EUR |
| IXTP50N25T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
auf Bestellung 289 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.13 EUR |
| 19+ | 3.9 EUR |
| IXTP60N10T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 49nC
Reverse recovery time: 59ns
On-state resistance: 18mΩ
Drain current: 60A
Drain-source voltage: 100V
Power dissipation: 176W
Kind of channel: enhancement
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 49nC
Reverse recovery time: 59ns
On-state resistance: 18mΩ
Drain current: 60A
Drain-source voltage: 100V
Power dissipation: 176W
Kind of channel: enhancement
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 251 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.87 EUR |
| 29+ | 2.47 EUR |
| 35+ | 2.04 EUR |
| 50+ | 1.66 EUR |
| 100+ | 1.63 EUR |
| IXTP60N20T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Drain current: 60A
Drain-source voltage: 200V
Power dissipation: 500W
Kind of channel: enhancement
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Drain current: 60A
Drain-source voltage: 200V
Power dissipation: 500W
Kind of channel: enhancement
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.68 EUR |
| 14+ | 5.31 EUR |
| IXTP62N15P |
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Hersteller: IXYS
IXTP62N15P THT N channel transistors
IXTP62N15P THT N channel transistors
auf Bestellung 235 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.16 EUR |
| 21+ | 3.53 EUR |
| 22+ | 3.35 EUR |
| IXTP6N100D2 |
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Hersteller: IXYS
IXTP6N100D2 THT N channel transistors
IXTP6N100D2 THT N channel transistors
auf Bestellung 350 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.73 EUR |
| 9+ | 8.28 EUR |
| 10+ | 7.84 EUR |



