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MIXA10WB1200TED IXYS


MIXA10WB1200TED.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A
Semiconductor structure: diode/transistor
Case: E2-Pack
Application: motors; photovoltaics
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 60W
Max. off-state voltage: 1.2kV
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
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3+81.72 EUR
6+73.36 EUR
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Technische Details MIXA10WB1200TED IXYS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A, Semiconductor structure: diode/transistor, Case: E2-Pack, Application: motors; photovoltaics, Type of semiconductor module: IGBT, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Technology: Sonic FRD™; XPT™, Collector current: 12A, Gate-emitter voltage: ±20V, Pulsed collector current: 30A, Power dissipation: 60W, Max. off-state voltage: 1.2kV, Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge.

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MIXA10WB1200TED Hersteller : IXYS MIXA10WB1200TED.pdf Description: IGBT MODULE 1200V 17A 60W E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 9A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: PT
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 60 W
Current - Collector Cutoff (Max): 700 µA
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MIXA10WB1200TED MIXA10WB1200TED Hersteller : IXYS media-3321026.pdf IGBT Modules Converter-Brake Inverter Module
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