IXDH20N120 IXYS
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Technology: NPT
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of transistor: IGBT
Gate charge: 70nC
Turn-on time: 175ns
Turn-off time: 570ns
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Power dissipation: 200W
Collector-emitter voltage: 1.2kV
| Anzahl | Preis |
|---|---|
| 9+ | 8.05 EUR |
| 10+ | 7.25 EUR |
| 12+ | 6.41 EUR |
| 30+ | 5.75 EUR |
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Technische Details IXDH20N120 IXYS
Description: IGBT NPT 1200V 38A TO-247AD, Gate Charge: 70 nC, Test Condition: 600V, 20A, 82Ohm, 15V, Switching Energy: 3.1mJ (on), 2.4mJ (off), IGBT Type: NPT, Supplier Device Package: TO-247AD, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Power - Max: 200 W, Current - Collector Pulsed (Icm): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 38 A, Part Status: Active.
Weitere Produktangebote IXDH20N120
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IXDH20N120 | Hersteller : IXYS |
Description: IGBT NPT 1200V 38A TO-247AD Gate Charge: 70 nC Test Condition: 600V, 20A, 82Ohm, 15V Switching Energy: 3.1mJ (on), 2.4mJ (off) IGBT Type: NPT Supplier Device Package: TO-247AD Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 200 W Current - Collector Pulsed (Icm): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 38 A Part Status: Active |
Produkt ist nicht verfügbar |
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IXDH20N120 | Hersteller : IXYS |
IGBT Transistors 20 Amps 1200V |
Produkt ist nicht verfügbar |