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IXFK88N30P IXFK88N30P IXYS IXFH(K,T)88N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO264
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
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IXFL210N30P3 IXFL210N30P3 IXYS IXFL210N30P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 268nC
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IXTT88N30P IXTT88N30P IXYS IXTH88N30P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
Reverse recovery time: 250ns
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IXTA36N30P IXTA36N30P IXYS IXTA36N30P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Reverse recovery time: 250ns
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IXFH50N30Q3 IXFH50N30Q3 IXYS IXFH50N30Q3_IXFT50N30Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 50A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 65nC
Reverse recovery time: 250ns
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IXTQ88N30P IXTQ88N30P IXYS IXTH88N30P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
Reverse recovery time: 250ns
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7+11.81 EUR
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IXFH56N30X3 IXFH56N30X3 IXYS IXF_56N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 56A
Power dissipation: 320W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 56nC
Reverse recovery time: 115ns
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IXFT150N30X3HV IXFT150N30X3HV IXYS IXF_150N30X3_HV.pdf 300VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 254nC
Reverse recovery time: 167ns
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IXFP56N30X3 IXFP56N30X3 IXYS IXF_56N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 56A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 56nC
Reverse recovery time: 115ns
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IXFK140N30P IXFK140N30P IXYS IXFK140N30P_IXFX140N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 185nC
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Drain current: 140A
Drain-source voltage: 300V
Power dissipation: 1.04kW
Kind of package: tube
Case: TO264
Kind of channel: enhancement
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IXFP38N30X3 IXFP38N30X3 IXYS IXF_38N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Reverse recovery time: 90ns
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IXFP56N30X3M IXFP56N30X3M IXYS IXFP56N30X3M.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 56A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 56nC
Reverse recovery time: 115ns
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IXFH72N30X3 IXFH72N30X3 IXYS IXF_72N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 72A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 82nC
Reverse recovery time: 100ns
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IXFH52N30P IXFH52N30P IXYS IXF(V,H)52N30P(S).pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 52A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 110nC
Reverse recovery time: 160ns
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IXFP38N30X3M IXFP38N30X3M IXYS IXFP38N30X3M.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Reverse recovery time: 90ns
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IXFA38N30X3 IXFA38N30X3 IXYS IXF_38N30X3.pdf 300VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Reverse recovery time: 90ns
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IXFP26N30X3 IXFP26N30X3 IXYS IXF_26N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 26A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Reverse recovery time: 105ns
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IXFX210N30X3 IXFX210N30X3 IXYS IXF_210N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 375nC
Reverse recovery time: 190ns
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IXFP72N30X3 IXFP72N30X3 IXYS IXF_72N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 72A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 82nC
Reverse recovery time: 100ns
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IXFQ72N30X3 IXFQ72N30X3 IXYS IXF_72N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 72A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 82nC
Reverse recovery time: 100ns
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IXFT120N30X3HV IXFT120N30X3HV IXYS IXF_120N30X3_HV.pdf 300VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 170nC
Reverse recovery time: 145ns
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MMIX1F210N30P3
+1
 		MMIX1F210N30P3 IXYS media?resourcetype=datasheets&itemid=670ef26e-24b2-4f5e-8ee0-56c3d653d777&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Mounting: SMD
Case: SMPD
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 268nC
Reverse recovery time: 250ns
On-state resistance: 16mΩ
Drain current: 108A
Gate-source voltage: ±20V
Power dissipation: 520W
Pulsed drain current: 550A
Drain-source voltage: 300V
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3+51.02 EUR
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IXFB170N30P IXFB170N30P IXYS IXFB170N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 170A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 258nC
Reverse recovery time: 200ns
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IXTK140N30P IXTK140N30P IXYS IXTK140N30P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Technology: Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 250ns
Gate charge: 185nC
On-state resistance: 0.24Ω
Gate-source voltage: ±20V
Drain current: 140A
Drain-source voltage: 300V
Power dissipation: 1.04kW
Kind of package: tube
Case: TO264
Kind of channel: enhancement
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IXFK140N25T IXFK140N25T IXYS IXFK(X)140N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 17mΩ
Drain current: 140A
Drain-source voltage: 250V
Power dissipation: 960W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXYK140N120A4 IXYS IXYK140N120A4_DS.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 1.5kW; TO264
Type of transistor: IGBT
Power dissipation: 1.5kW
Case: TO264
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 1.2kA
Produkt ist nicht verfügbar
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IXYK140N90C3 IXYK140N90C3 IXYS IXYK(X)140N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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DSA20C100PN DSA20C100PN IXYS DSA20C100PN.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.71V
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Max. forward voltage: 0.71V
Power dissipation: 35W
Load current: 10A x2
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.24kA
auf Bestellung 37 Stücke:
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37+1.93 EUR
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DSA20C45PB DSA20C45PB IXYS DSA20C45PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220AB; Ufmax: 0.61V
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.61V
Power dissipation: 45W
Load current: 10A x2
Max. off-state voltage: 45V
Max. forward impulse current: 260A
auf Bestellung 312 Stücke:
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143+0.5 EUR
148+0.49 EUR
149+0.48 EUR
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IXTK100N25P IXTK100N25P IXYS IXTK100N25P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Technology: PolarHT™
Type of transistor: N-MOSFET
Mounting: THT
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
Reverse recovery time: 200ns
Kind of channel: enhancement
On-state resistance: 27mΩ
Gate-source voltage: ±20V
Power dissipation: 600W
Drain-source voltage: 250V
Drain current: 100A
Produkt ist nicht verfügbar
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IXFH12N100P IXFH12N100P IXYS IXFH12N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 263 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.44 EUR
8+9.38 EUR
9+8.71 EUR
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IXTH12N100L IXTH12N100L IXYS IXTH12N100L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
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CPC3703CTR CPC3703CTR IXYS CPC3703.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT89
On-state resistance: 4Ω
Drain current: 0.36A
Power dissipation: 1.1W
Gate-source voltage: ±15V
Drain-source voltage: 250V
Polarisation: unipolar
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DSEK60-02A DSEK60-02A IXYS 238_L124.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-3
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
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DSEK60-02AR DSEK60-02AR IXYS 238_L124.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: ISOPLUS247™
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Produkt ist nicht verfügbar
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DNA30E2200PA DNA30E2200PA IXYS DNA30E2200PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Mounting: THT
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Max. forward voltage: 1.24V
Load current: 30A
Power dissipation: 210W
Max. forward impulse current: 315A
Max. off-state voltage: 2.2kV
auf Bestellung 394 Stücke:
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DNA30E2200FE DNA30E2200FE IXYS media?resourcetype=datasheets&itemid=b450a78f-15ed-4d9b-87fd-45be0f83674f&filename=Littelfuse-Power-Semiconductors-DNA30E2200FE-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; Ufmax: 1.22V
Mounting: THT
Case: ISOPLUS i4-pac™ x024e
Features of semiconductor devices: high voltage
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Max. forward voltage: 1.22V
Load current: 30A
Power dissipation: 110W
Max. forward impulse current: 370A
Max. off-state voltage: 2.2kV
auf Bestellung 229 Stücke:
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CNA30E2200FB IXYS CNA30E2200FB.pdf Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; 30A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Features of semiconductor devices: phase control thyristor (PCT)
Type of thyristor: thyristor
Gate current: 250mA
Load current: 30A
Max. forward impulse current: 200A
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
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CNE60E2200TZ-TUB IXYS Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; Ifmax: 94A; 60A; Igt: 80mA; D3PAK,TO268AA; SMD
Mounting: SMD
Case: D3PAK; TO268AA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
Load current: 60A
Max. load current: 94A
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
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DNA30E2200PZ-TRL IXYS media?resourcetype=datasheets&itemid=15a76a8f-64ce-441e-839f-231a223f6827&filename=Littelfuse-Power-Semiconductors-DNA30E2200PZ-Datasheet Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; D2PAK; Ufmax: 1.26V; Ifsm: 370A
Mounting: SMD
Case: D2PAK
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward voltage: 1.26V
Load current: 30A
Max. forward impulse current: 370A
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
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DNA30E2200PZ-TUB IXYS DNA30E2200PZ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Mounting: SMD
Case: TO263ABHV
Features of semiconductor devices: high voltage
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Max. forward voltage: 1.24V
Load current: 30A
Power dissipation: 210W
Max. forward impulse current: 315A
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
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DNA120E2200KO IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 120A; tube; Ifsm: 2kA; ISOPLUS264™
Mounting: THT
Case: ISOPLUS264™
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Load current: 120A
Max. forward impulse current: 2kA
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
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LBB126P LBB126P IXYS LBB126.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LBB126 LBB126 IXYS LBB126.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LBB126S LBB126S IXYS LBB126.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LBB126PTR IXYS LBB126.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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LBB126STR IXYS LBB126.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXDI614SITR IXYS littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SOIC8; 14A; Ch: 1; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SOIC8
Output current: 14A
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 18ns
Application: automotive industry
Maximum output current: 14A
Supply voltage: 4.5...35V
Kind of output: N-Channel
Produkt ist nicht verfügbar
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IX4310TTR IX4310TTR IXYS littelfuse-integrated-circuits-ix4310t-datasheet?assetguid=f6c6e9cc-7c3e-472d-bad7-d563f01f2fa2 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOT23-5; -2÷2A; Ch: 2; 5÷24V
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Kind of package: reel; tape
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Case: SOT23-5
Produkt ist nicht verfügbar
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IXBOD1-25R IXYS IXBOD1_v2.pdf Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; 2.5kV; bulk
Type of thyristor: BOD x3
Max. load current: 0.9A
Case: BOD
Mounting: THT
Breakover voltage: 2.5kV
Kind of package: bulk
Produkt ist nicht verfügbar
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IXBOD1-25RD IXYS IXBOD1_v2.pdf Category: Thyristors - others
Description: Thyristor: BOD x3; 0.2A; BOD; THT; 2.5kV; bulk
Type of thyristor: BOD x3
Max. load current: 0.2A
Case: BOD
Mounting: THT
Breakover voltage: 2.5kV
Features of semiconductor devices: version RD (internal diode)
Kind of package: bulk
Produkt ist nicht verfügbar
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IXTP6N100D2 IXTP6N100D2 IXYS IXTA(H,P)6N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
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IXFR26N100P IXFR26N100P IXYS IXFR26N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 197nC
On-state resistance: 0.43Ω
Drain current: 15A
Power dissipation: 290W
Drain-source voltage: 1kV
Polarisation: unipolar
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IXTP1R6N100D2 IXTP1R6N100D2 IXYS IXTA(P,Y)1R6N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
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IXTA6N100D2 IXTA6N100D2 IXYS IXTA(H,P)6N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO263; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
Produkt ist nicht verfügbar
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IXTH6N100D2 IXTH6N100D2 IXYS IXTA(H,P)6N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO247-3; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
Produkt ist nicht verfügbar
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IXFN36N100 IXFN36N100 IXYS IXFN36N100.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Kind of channel: enhancement
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 180ns
Gate charge: 380nC
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFK26N100P IXFK26N100P IXYS IXFK26N100P_IXFX26N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Gate charge: 197nC
Produkt ist nicht verfügbar
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IXFX26N100P IXFX26N100P IXYS IXFK26N100P_IXFX26N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 197nC
Produkt ist nicht verfügbar
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IXTY1R6N100D2 IXTY1R6N100D2 IXYS IXTA(P,Y)1R6N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
Produkt ist nicht verfügbar
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IXFK88N30P IXFH(K,T)88N30P.pdf
IXFK88N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO264
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
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Anzahl Preis
1+71.5 EUR
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IXFL210N30P3 IXFL210N30P3.pdf
IXFL210N30P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 268nC
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IXTT88N30P IXTH88N30P-DTE.pdf
IXTT88N30P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
Reverse recovery time: 250ns
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5+15.1 EUR
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IXTA36N30P IXTA36N30P-DTE.pdf
IXTA36N30P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Reverse recovery time: 250ns
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20+3.65 EUR
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IXFH50N30Q3 IXFH50N30Q3_IXFT50N30Q3.pdf
IXFH50N30Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 50A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 65nC
Reverse recovery time: 250ns
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Anzahl Preis
6+13.2 EUR
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IXTQ88N30P IXTH88N30P-DTE.pdf
IXTQ88N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
Reverse recovery time: 250ns
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.71 EUR
7+11.81 EUR
10+10.48 EUR
30+9.81 EUR
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IXFH56N30X3 IXF_56N30X3.pdf 300VProductBrief.pdf
IXFH56N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 56A
Power dissipation: 320W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 56nC
Reverse recovery time: 115ns
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.55 EUR
10+8.25 EUR
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IXFT150N30X3HV IXF_150N30X3_HV.pdf 300VProductBrief.pdf
IXFT150N30X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 254nC
Reverse recovery time: 167ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.79 EUR
5+20.82 EUR
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IXFP56N30X3 IXF_56N30X3.pdf 300VProductBrief.pdf
IXFP56N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 56A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 56nC
Reverse recovery time: 115ns
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.91 EUR
11+6.52 EUR
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IXFK140N30P IXFK140N30P_IXFX140N30P.pdf
IXFK140N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 185nC
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Drain current: 140A
Drain-source voltage: 300V
Power dissipation: 1.04kW
Kind of package: tube
Case: TO264
Kind of channel: enhancement
auf Bestellung 256 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+22.49 EUR
5+20.08 EUR
10+18.98 EUR
Mindestbestellmenge: 4
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IXFP38N30X3 IXF_38N30X3.pdf 300VProductBrief.pdf
IXFP38N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Reverse recovery time: 90ns
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.12 EUR
16+4.6 EUR
18+4.08 EUR
50+3.66 EUR
Mindestbestellmenge: 14
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IXFP56N30X3M IXFP56N30X3M.pdf 300VProductBrief.pdf
IXFP56N30X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 56A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 56nC
Reverse recovery time: 115ns
auf Bestellung 311 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.38 EUR
11+6.88 EUR
Mindestbestellmenge: 8
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IXFH72N30X3 IXF_72N30X3.pdf 300VProductBrief.pdf
IXFH72N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 72A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 82nC
Reverse recovery time: 100ns
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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IXFH52N30P IXF(V,H)52N30P(S).pdf
IXFH52N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 52A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 110nC
Reverse recovery time: 160ns
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.91 EUR
10+7.29 EUR
12+6.49 EUR
30+5.62 EUR
Mindestbestellmenge: 9
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IXFP38N30X3M IXFP38N30X3M.pdf 300VProductBrief.pdf
IXFP38N30X3M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Reverse recovery time: 90ns
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.65 EUR
15+4.85 EUR
50+4.39 EUR
Mindestbestellmenge: 13
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IXFA38N30X3 IXF_38N30X3.pdf 300VProductBrief.pdf
IXFA38N30X3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Reverse recovery time: 90ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.12 EUR
16+4.53 EUR
Mindestbestellmenge: 14
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IXFP26N30X3 IXF_26N30X3.pdf 300VProductBrief.pdf
IXFP26N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 26A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Reverse recovery time: 105ns
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.8 EUR
25+2.97 EUR
Mindestbestellmenge: 19
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IXFX210N30X3 IXF_210N30X3.pdf 300VProductBrief.pdf
IXFX210N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 375nC
Reverse recovery time: 190ns
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+33.16 EUR
5+32.07 EUR
Mindestbestellmenge: 3
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IXFP72N30X3 IXF_72N30X3.pdf 300VProductBrief.pdf
IXFP72N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 72A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 82nC
Reverse recovery time: 100ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.85 EUR
10+8.14 EUR
25+7.92 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ72N30X3 IXF_72N30X3.pdf 300VProductBrief.pdf
IXFQ72N30X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 72A
Power dissipation: 390W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 82nC
Reverse recovery time: 100ns
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.72 EUR
10+8.88 EUR
30+8.65 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFT120N30X3HV IXF_120N30X3_HV.pdf 300VProductBrief.pdf
IXFT120N30X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 170nC
Reverse recovery time: 145ns
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.78 EUR
10+16.02 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
MMIX1F210N30P3 media?resourcetype=datasheets&itemid=670ef26e-24b2-4f5e-8ee0-56c3d653d777&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf
MMIX1F210N30P3
+1
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Mounting: SMD
Case: SMPD
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 268nC
Reverse recovery time: 250ns
On-state resistance: 16mΩ
Drain current: 108A
Gate-source voltage: ±20V
Power dissipation: 520W
Pulsed drain current: 550A
Drain-source voltage: 300V
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+57.77 EUR
3+51.02 EUR
10+45.87 EUR
20+45.82 EUR
Mindestbestellmenge: 2
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IXFB170N30P IXFB170N30P.pdf
IXFB170N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 170A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 258nC
Reverse recovery time: 200ns
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.37 EUR
Mindestbestellmenge: 3
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IXTK140N30P IXTK140N30P-DTE.pdf
IXTK140N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Technology: Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 250ns
Gate charge: 185nC
On-state resistance: 0.24Ω
Gate-source voltage: ±20V
Drain current: 140A
Drain-source voltage: 300V
Power dissipation: 1.04kW
Kind of package: tube
Case: TO264
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK140N25T IXFK(X)140N25T.pdf
IXFK140N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 17mΩ
Drain current: 140A
Drain-source voltage: 250V
Power dissipation: 960W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXYK140N120A4 IXYK140N120A4_DS.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 1.5kW; TO264
Type of transistor: IGBT
Power dissipation: 1.5kW
Case: TO264
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 1.2kA
Produkt ist nicht verfügbar
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IXYK140N90C3 IXYK(X)140N90C3.pdf
IXYK140N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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DSA20C100PN DSA20C100PN.pdf
DSA20C100PN
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.71V
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Max. forward voltage: 0.71V
Power dissipation: 35W
Load current: 10A x2
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.24kA
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.93 EUR
Mindestbestellmenge: 37
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DSA20C45PB DSA20C45PB.pdf
DSA20C45PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220AB; Ufmax: 0.61V
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.61V
Power dissipation: 45W
Load current: 10A x2
Max. off-state voltage: 45V
Max. forward impulse current: 260A
auf Bestellung 312 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
148+0.49 EUR
149+0.48 EUR
Mindestbestellmenge: 143
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IXTK100N25P IXTK100N25P-DTE.pdf
IXTK100N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Technology: PolarHT™
Type of transistor: N-MOSFET
Mounting: THT
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
Reverse recovery time: 200ns
Kind of channel: enhancement
On-state resistance: 27mΩ
Gate-source voltage: ±20V
Power dissipation: 600W
Drain-source voltage: 250V
Drain current: 100A
Produkt ist nicht verfügbar
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IXFH12N100P IXFH12N100P.pdf
IXFH12N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 263 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.44 EUR
8+9.38 EUR
9+8.71 EUR
10+7.72 EUR
30+7.54 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTH12N100L IXTH12N100L.pdf
IXTH12N100L
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
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CPC3703CTR CPC3703.pdf
CPC3703CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT89
On-state resistance: 4Ω
Drain current: 0.36A
Power dissipation: 1.1W
Gate-source voltage: ±15V
Drain-source voltage: 250V
Polarisation: unipolar
auf Bestellung 1478 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.37 EUR
83+0.87 EUR
125+0.57 EUR
250+0.5 EUR
500+0.49 EUR
Mindestbestellmenge: 53
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DSEK60-02A 238_L124.pdf
DSEK60-02A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-3
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.89 EUR
14+5.21 EUR
Mindestbestellmenge: 13
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DSEK60-02AR 238_L124.pdf
DSEK60-02AR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: ISOPLUS247™
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Produkt ist nicht verfügbar
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DNA30E2200PA DNA30E2200PA.pdf
DNA30E2200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Mounting: THT
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Max. forward voltage: 1.24V
Load current: 30A
Power dissipation: 210W
Max. forward impulse current: 315A
Max. off-state voltage: 2.2kV
auf Bestellung 394 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.59 EUR
19+3.8 EUR
22+3.4 EUR
25+3.35 EUR
Mindestbestellmenge: 16
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DNA30E2200FE media?resourcetype=datasheets&itemid=b450a78f-15ed-4d9b-87fd-45be0f83674f&filename=Littelfuse-Power-Semiconductors-DNA30E2200FE-Datasheet
DNA30E2200FE
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; Ufmax: 1.22V
Mounting: THT
Case: ISOPLUS i4-pac™ x024e
Features of semiconductor devices: high voltage
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Max. forward voltage: 1.22V
Load current: 30A
Power dissipation: 110W
Max. forward impulse current: 370A
Max. off-state voltage: 2.2kV
auf Bestellung 229 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.01 EUR
10+7.38 EUR
25+7.25 EUR
Mindestbestellmenge: 8
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CNA30E2200FB CNA30E2200FB.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; 30A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Features of semiconductor devices: phase control thyristor (PCT)
Type of thyristor: thyristor
Gate current: 250mA
Load current: 30A
Max. forward impulse current: 200A
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
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CNE60E2200TZ-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; Ifmax: 94A; 60A; Igt: 80mA; D3PAK,TO268AA; SMD
Mounting: SMD
Case: D3PAK; TO268AA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
Load current: 60A
Max. load current: 94A
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
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DNA30E2200PZ-TRL media?resourcetype=datasheets&itemid=15a76a8f-64ce-441e-839f-231a223f6827&filename=Littelfuse-Power-Semiconductors-DNA30E2200PZ-Datasheet
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; D2PAK; Ufmax: 1.26V; Ifsm: 370A
Mounting: SMD
Case: D2PAK
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward voltage: 1.26V
Load current: 30A
Max. forward impulse current: 370A
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
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DNA30E2200PZ-TUB DNA30E2200PZ.pdf
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Mounting: SMD
Case: TO263ABHV
Features of semiconductor devices: high voltage
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Max. forward voltage: 1.24V
Load current: 30A
Power dissipation: 210W
Max. forward impulse current: 315A
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
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DNA120E2200KO
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 120A; tube; Ifsm: 2kA; ISOPLUS264™
Mounting: THT
Case: ISOPLUS264™
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Load current: 120A
Max. forward impulse current: 2kA
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
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LBB126P LBB126.pdf
LBB126P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.18 EUR
50+6.66 EUR
100+5.35 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
LBB126 LBB126.pdf
LBB126
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.33 EUR
50+7.42 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
LBB126S LBB126.pdf
LBB126S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.18 EUR
50+6.66 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
LBB126PTR LBB126.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LBB126STR LBB126.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXDI614SITR littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SOIC8; 14A; Ch: 1; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SOIC8
Output current: 14A
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 18ns
Application: automotive industry
Maximum output current: 14A
Supply voltage: 4.5...35V
Kind of output: N-Channel
Produkt ist nicht verfügbar
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IX4310TTR littelfuse-integrated-circuits-ix4310t-datasheet?assetguid=f6c6e9cc-7c3e-472d-bad7-d563f01f2fa2
IX4310TTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOT23-5; -2÷2A; Ch: 2; 5÷24V
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Kind of package: reel; tape
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Case: SOT23-5
Produkt ist nicht verfügbar
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IXBOD1-25R IXBOD1_v2.pdf
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; 2.5kV; bulk
Type of thyristor: BOD x3
Max. load current: 0.9A
Case: BOD
Mounting: THT
Breakover voltage: 2.5kV
Kind of package: bulk
Produkt ist nicht verfügbar
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IXBOD1-25RD IXBOD1_v2.pdf
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x3; 0.2A; BOD; THT; 2.5kV; bulk
Type of thyristor: BOD x3
Max. load current: 0.2A
Case: BOD
Mounting: THT
Breakover voltage: 2.5kV
Features of semiconductor devices: version RD (internal diode)
Kind of package: bulk
Produkt ist nicht verfügbar
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IXTP6N100D2 IXTA(H,P)6N100D2.pdf
IXTP6N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.4 EUR
9+8.47 EUR
10+7.54 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFR26N100P IXFR26N100P.pdf
IXFR26N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 197nC
On-state resistance: 0.43Ω
Drain current: 15A
Power dissipation: 290W
Drain-source voltage: 1kV
Polarisation: unipolar
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+51.59 EUR
3+46.43 EUR
Mindestbestellmenge: 2
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IXTP1R6N100D2 IXTA(P,Y)1R6N100D2.pdf
IXTP1R6N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.4 EUR
19+3.86 EUR
50+2.82 EUR
100+2.5 EUR
Mindestbestellmenge: 17
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IXTA6N100D2 IXTA(H,P)6N100D2.pdf
IXTA6N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO263; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
Produkt ist nicht verfügbar
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IXTH6N100D2 IXTA(H,P)6N100D2.pdf
IXTH6N100D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO247-3; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
Produkt ist nicht verfügbar
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IXFN36N100 description IXFN36N100.pdf
IXFN36N100
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Kind of channel: enhancement
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 180ns
Gate charge: 380nC
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFK26N100P IXFK26N100P_IXFX26N100P.pdf
IXFK26N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Gate charge: 197nC
Produkt ist nicht verfügbar
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IXFX26N100P IXFK26N100P_IXFX26N100P.pdf
IXFX26N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 197nC
Produkt ist nicht verfügbar
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IXTY1R6N100D2 IXTA(P,Y)1R6N100D2.pdf
IXTY1R6N100D2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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