| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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CPC1302G | IXYS |
 Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V Kind of output: Darlington Case: DIP8 Mounting: THT Type of optocoupler: optocoupler Number of channels: 2 Collector-emitter voltage: 350V CTR@If: 1000-8000%@1mA Insulation voltage: 3.75kV |
auf Bestellung 176 Stücke: Lieferzeit 14-21 Tag (e) |
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CLA100PD1200NA | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw Max. forward impulse current: 1.5kA Gate current: 40/80mA Max. forward voltage: 1.21V Type of semiconductor module: diode-thyristor Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 100A Max. load current: 150A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.83V Case: SOT227B |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGN200N60B3 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 200A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Power dissipation: 830W Technology: GenX3™; PT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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DSEI2X61-02A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 200V Load current: 71A x2 Case: SOT227B Max. forward voltage: 0.88V Max. forward impulse current: 0.95kA Electrical mounting: screw Mechanical mounting: screw Max. load current: 142A Kind of package: tube |
auf Bestellung 121 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEC120-12AK | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 60Ax2; Ifsm: 500A; TO264; tube; 330W Reverse recovery time: 40ns Mounting: THT Max. forward impulse current: 0.5kA Max. forward voltage: 2.66V Power dissipation: 330W Technology: HiPerFRED™ Features of semiconductor devices: fast switching Max. off-state voltage: 1.2kV Load current: 60A x2 Kind of package: tube Semiconductor structure: common cathode; double Case: TO264 Type of diode: rectifying |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH26N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 500W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns |
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CLA80MT1200NHB | IXYS |
Category: Triacs Description: Triac; 1.2kV; 40A; Igt: 70/90mA; TO247-3; tube; Ifsm: 440A Max. forward impulse current: 0.44kA Gate current: 70/90mA Max. off-state voltage: 1.2kV Max. load current: 40A Kind of package: tube Case: TO247-3 Typ of triac: standard Mounting: THT |
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CLA60MT1200NHB | IXYS |
Category: Triacs Description: Triac; 1.2kV; 30A; Igt: 60/80mA; TO247-3; tube; Ifsm: 325A Max. forward impulse current: 325A Gate current: 60/80mA Max. off-state voltage: 1.2kV Max. load current: 30A Kind of package: tube Case: TO247-3 Typ of triac: standard Mounting: THT |
Produkt ist nicht verfügbar |
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CLA60MT1200NHR | IXYS |
Category: Triacs Description: Triac; 1.2kV; 30A; Igt: 60/80mA; ISO247™; tube; Ifsm: 325A Max. forward impulse current: 325A Gate current: 60/80mA Max. off-state voltage: 1.2kV Max. load current: 30A Kind of package: tube Case: ISO247™ Typ of triac: standard Mounting: THT |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH230N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 230A Power dissipation: 650W Case: TO247-3 On-state resistance: 4.7mΩ Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 82ns Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 307 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH320N10T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 320A Power dissipation: 1kW Case: TO247-3 On-state resistance: 3.5mΩ Mounting: THT Gate charge: 430nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 98ns |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
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| MCB40P1200LB-TRR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 55A Case: SMPD-B Gate-source voltage: -5...20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 161nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: double series |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MCB40P1200LB-TUB | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 55A Case: SMPD-B Gate-source voltage: -5...20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 161nC Kind of package: tube Kind of channel: enhancement Semiconductor structure: double series |
Produkt ist nicht verfügbar |
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DSEP8-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 40A; TO220AC; 60W; 40ns Max. off-state voltage: 1.2kV Features of semiconductor devices: fast switching Technology: HiPerFRED™ Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Case: TO220AC Kind of package: tube Reverse recovery time: 40ns Max. forward voltage: 1.96V Load current: 8A Max. forward impulse current: 40A Power dissipation: 60W |
auf Bestellung 174 Stücke: Lieferzeit 14-21 Tag (e) |
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IX4426MTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2 Mounting: SMD Supply voltage: 4.5...30V Output current: -1.5...1.5A Type of integrated circuit: driver Kind of output: inverting Operating temperature: -40...125°C Kind of package: reel; tape Case: DFN8 Kind of integrated circuit: low-side; MOSFET gate driver Number of channels: 2 |
auf Bestellung 1998 Stücke: Lieferzeit 14-21 Tag (e) |
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IX4426NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Mounting: SMD Supply voltage: 4.5...35V Output current: -1.5...1.5A Type of integrated circuit: driver Kind of output: inverting Operating temperature: -40...125°C Kind of package: reel; tape Case: SO8 Kind of integrated circuit: low-side; MOSFET gate driver Number of channels: 2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IX4426NE | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V Impulse rise time: 10ns Mounting: SMD Supply voltage: 4.5...30V Output current: 1.5A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Integrated circuit features: MOSFET Pulse fall time: 8ns Case: SOIC8 Kind of integrated circuit: low-side Number of channels: 2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IX4426NETR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V Impulse rise time: 10ns Mounting: SMD Supply voltage: 4.5...30V Output current: 1.5A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Integrated circuit features: MOSFET Pulse fall time: 8ns Case: SOIC8 Kind of integrated circuit: low-side Number of channels: 2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXBN42N170A | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.7kV Collector current: 21A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 265A Power dissipation: 313W Technology: BiMOSFET™ Features of semiconductor devices: high voltage Mechanical mounting: screw |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| MMIX1G320N60B3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD Technology: BiMOSFET™; GenX3™; PT Mounting: SMD Case: SMPD Kind of package: tube Turn-on time: 107ns Gate charge: 585nC Turn-off time: 595ns Gate-emitter voltage: ±20V Collector current: 180A Collector-emitter voltage: 600V Pulsed collector current: 1kA Power dissipation: 1kW Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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OMA160 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC Insulation voltage: 3.75kV Case: DIP6 Mounting: THT Manufacturer series: OptoMOS Type of relay: solid state Relay variant: 1-phase; current source Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Turn-on time: 125µs Switched voltage: max. 250V AC; max. 250V DC Max. operating current: 50mA Turn-off time: 125µs Control current max.: 50mA On-state resistance: 100Ω |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1560G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC Mounting: THT Case: DIP8 Type of relay: solid state Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 0.1ms Switched voltage: max. 60V AC; max. 60V DC Max. operating current: 300mA Turn-off time: 400µs Control current max.: 50mA On-state resistance: 5.6Ω |
auf Bestellung 146 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEP30-06B | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO247-2; tube; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 250A Case: TO247-2 Kind of package: tube Max. forward voltage: 2.51V Power dissipation: 165W Reverse recovery time: 25ns Technology: HiPerFRED™ |
auf Bestellung 165 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEP30-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO247-2; tube; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 250A Case: TO247-2 Kind of package: tube Max. forward voltage: 1.25V Power dissipation: 165W Reverse recovery time: 35ns Technology: HiPerFRED™ |
auf Bestellung 297 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEP30-06BR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; ISOPLUS247™ Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 250A Case: ISOPLUS247™ Max. forward voltage: 1.61V Power dissipation: 135W Reverse recovery time: 25ns Technology: HiPerFRED™ |
auf Bestellung 295 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYH40N90C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 900V Collector current: 40A Power dissipation: 500W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 74nC Kind of package: tube Technology: GenX3™; Planar; XPT™ Turn-on time: 81ns Turn-off time: 237ns |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYH40N90C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 900V Collector current: 40A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 74nC Kind of package: tube Technology: GenX3™; Planar; XPT™ Turn-on time: 81ns Turn-off time: 237ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXYX140N90C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™ Type of transistor: IGBT Collector-emitter voltage: 900V Collector current: 140A Power dissipation: 1.63kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 840A Mounting: THT Gate charge: 330nC Kind of package: tube Technology: GenX3™; Planar; XPT™ Turn-on time: 122ns Turn-off time: 0.3µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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LCC110 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Type of relay: solid state Mounting: THT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPDT Insulation voltage: 3.75kV Turn-on time: 4ms Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Max. operating current: 120mA Turn-off time: 4ms Control current max.: 50mA On-state resistance: 35Ω |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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LCC110S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPDT Insulation voltage: 3.75kV Turn-on time: 4ms Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Max. operating current: 120mA Turn-off time: 4ms Control current max.: 50mA On-state resistance: 35Ω |
auf Bestellung 103 Stücke: Lieferzeit 14-21 Tag (e) |
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LCC110P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 9.65x6.35x2.16mm Operating temperature: -40...85°C Contacts configuration: SPDT Insulation voltage: 3.75kV Turn-on time: 4ms Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Max. operating current: 120mA Turn-off time: 4ms Control current max.: 50mA On-state resistance: 35Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| LCC110PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 9.65x6.35x2.16mm Operating temperature: -40...85°C Contacts configuration: SPDT Insulation voltage: 3.75kV Turn-on time: 4ms Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Max. operating current: 120mA Turn-off time: 4ms Control current max.: 50mA On-state resistance: 35Ω |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| LCC110STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPDT Insulation voltage: 3.75kV Turn-on time: 4ms Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Max. operating current: 120mA Turn-off time: 4ms Control current max.: 50mA On-state resistance: 35Ω |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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LCC120 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 0.17A Mounting: THT Manufacturer series: OptoMOS Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 20Ω Relay variant: 1-phase; current source |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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LCC120S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 0.17A Mounting: SMT Manufacturer series: OptoMOS Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 20Ω Relay variant: 1-phase; current source |
auf Bestellung 452 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| LCC120STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 0.17A Mounting: SMT Manufacturer series: OptoMOS Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 20Ω Relay variant: 1-phase; current source |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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LAA110 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Control current max.: 50mA Kind of output: MOSFET |
auf Bestellung 245 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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LAA110PL | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 295 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK80N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 80A Power dissipation: 890W Case: TO264P On-state resistance: 38mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns Features of semiconductor devices: ultra junction x-class |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH80N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3 Type of transistor: N-MOSFET On-state resistance: 38mΩ Reverse recovery time: 200ns Mounting: THT Power dissipation: 890W Gate charge: 0.14µC Polarisation: unipolar Technology: HiPerFET™; X2-Class Drain current: 80A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V Kind of package: tube Case: TO247-3 |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH80N65X2-4 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4 Type of transistor: N-MOSFET On-state resistance: 38mΩ Reverse recovery time: 200ns Mounting: THT Power dissipation: 890W Gate charge: 0.14µC Polarisation: unipolar Technology: HiPerFET™; X2-Class Drain current: 80A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V Kind of package: tube Case: TO247-4 |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH80N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 80A Power dissipation: 890W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: THT Gate charge: 137nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 465ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFT80N65X2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 80A Power dissipation: 890W Case: TO268 Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MCC56-16io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 60A Case: TO240AA Max. forward voltage: 1.57V Max. forward impulse current: 1.6kA Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXYH120N65C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 260A; 1.36kW; TO247-3 Type of transistor: IGBT Power dissipation: 1.36kW Case: TO247-3 Mounting: THT Kind of package: tube Collector current: 260A Collector-emitter voltage: 650V Pulsed collector current: 620A Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXFB44N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 44A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 305nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP44N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 130W Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Drain current: 44A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET On-state resistance: 30mΩ Reverse recovery time: 60ns |
auf Bestellung 134 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MMIX1F44N100Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Pulsed drain current: 110A Power dissipation: 694W Case: SMPD Gate-source voltage: ±30V On-state resistance: 245mΩ Mounting: SMD Gate charge: 264nC Kind of channel: enhancement Technology: HiPerFET™; Q3-Class Reverse recovery time: 300ns |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
IXFA4N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Power dissipation: 150W Case: TO263 Mounting: SMD Gate charge: 26nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Polar™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFA4N100Q | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 150W Case: TO263AA Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 39nC Kind of channel: enhancement Technology: HiPerFET™ Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFP4N100PM | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2.1A Pulsed drain current: 8A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3.3Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Polar™ Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH4N100L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Power dissipation: 290W Case: TO247-3 Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 1.1µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFB44N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 44A; 1560W; PLUS264™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 44A Power dissipation: 1.56kW Case: PLUS264™ On-state resistance: 0.22Ω Mounting: THT Gate charge: 264nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGA48N60C3-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 75A; 300W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 300W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: SMD Gate charge: 77nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTA110N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 180W Case: TO263 On-state resistance: 6.6mΩ Mounting: SMD Gate charge: 57nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 38ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTQ36P15P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -36A Power dissipation: 300W Case: TO3P Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: THT Gate charge: 55nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 228ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MCMA550PD1600PTSF | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 550A; SimBus F; Ifsm: 13kA Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Case: SimBus F Electrical mounting: Press-Fit; screw Max. load current: 864A Max. forward impulse current: 13kA Load current: 550A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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DSEI12-10A | IXYS |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 12A; tube; Ifsm: 75A; TO220AC; 78W; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 12A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 75A Case: TO220AC Max. forward voltage: 2.7V Heatsink thickness: 2.29...2.79mm Power dissipation: 78W Reverse recovery time: 50ns Technology: FRED |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1001N | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 30V Insulation voltage: 1.5kV Type of optocoupler: optocoupler Turn-on time: 1µs Case: SOP4 Turn-off time: 30µs Number of channels: 1 Mounting: SMD Collector-emitter voltage: 30V CTR@If: 100-800%@0.2mA Kind of output: transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1001NTR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C Operating temperature: -40...85°C Insulation voltage: 1.5kV Type of optocoupler: optocoupler Turn-on time: 1µs Switched voltage: max. 30V DC Case: SOP4 Max. operating current: 0.1A Turn-off time: 30µs Number of channels: 1 Control current max.: 5mA Mounting: SMD CTR@If: 100-800%@0.2mA Kind of output: transistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CPC1302G |
|
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V
Kind of output: Darlington
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Number of channels: 2
Collector-emitter voltage: 350V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V
Kind of output: Darlington
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Number of channels: 2
Collector-emitter voltage: 350V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)
| CLA100PD1200NA |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Max. forward impulse current: 1.5kA
Gate current: 40/80mA
Max. forward voltage: 1.21V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 100A
Max. load current: 150A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.83V
Case: SOT227B
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Max. forward impulse current: 1.5kA
Gate current: 40/80mA
Max. forward voltage: 1.21V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 100A
Max. load current: 150A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.83V
Case: SOT227B
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
| IXGN200N60B3 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Power dissipation: 830W
Technology: GenX3™; PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Power dissipation: 830W
Technology: GenX3™; PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSEI2X61-02A |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 71A x2
Case: SOT227B
Max. forward voltage: 0.88V
Max. forward impulse current: 0.95kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 142A
Kind of package: tube
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 71A x2
Case: SOT227B
Max. forward voltage: 0.88V
Max. forward impulse current: 0.95kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 142A
Kind of package: tube
auf Bestellung 121 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEC120-12AK |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; Ifsm: 500A; TO264; tube; 330W
Reverse recovery time: 40ns
Mounting: THT
Max. forward impulse current: 0.5kA
Max. forward voltage: 2.66V
Power dissipation: 330W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Load current: 60A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO264
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; Ifsm: 500A; TO264; tube; 330W
Reverse recovery time: 40ns
Mounting: THT
Max. forward impulse current: 0.5kA
Max. forward voltage: 2.66V
Power dissipation: 330W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Load current: 60A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO264
Type of diode: rectifying
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH26N50P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CLA80MT1200NHB |
|
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 40A; Igt: 70/90mA; TO247-3; tube; Ifsm: 440A
Max. forward impulse current: 0.44kA
Gate current: 70/90mA
Max. off-state voltage: 1.2kV
Max. load current: 40A
Kind of package: tube
Case: TO247-3
Typ of triac: standard
Mounting: THT
Category: Triacs
Description: Triac; 1.2kV; 40A; Igt: 70/90mA; TO247-3; tube; Ifsm: 440A
Max. forward impulse current: 0.44kA
Gate current: 70/90mA
Max. off-state voltage: 1.2kV
Max. load current: 40A
Kind of package: tube
Case: TO247-3
Typ of triac: standard
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CLA60MT1200NHB |
|
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; Igt: 60/80mA; TO247-3; tube; Ifsm: 325A
Max. forward impulse current: 325A
Gate current: 60/80mA
Max. off-state voltage: 1.2kV
Max. load current: 30A
Kind of package: tube
Case: TO247-3
Typ of triac: standard
Mounting: THT
Category: Triacs
Description: Triac; 1.2kV; 30A; Igt: 60/80mA; TO247-3; tube; Ifsm: 325A
Max. forward impulse current: 325A
Gate current: 60/80mA
Max. off-state voltage: 1.2kV
Max. load current: 30A
Kind of package: tube
Case: TO247-3
Typ of triac: standard
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
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| CLA60MT1200NHR |
|
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; Igt: 60/80mA; ISO247™; tube; Ifsm: 325A
Max. forward impulse current: 325A
Gate current: 60/80mA
Max. off-state voltage: 1.2kV
Max. load current: 30A
Kind of package: tube
Case: ISO247™
Typ of triac: standard
Mounting: THT
Category: Triacs
Description: Triac; 1.2kV; 30A; Igt: 60/80mA; ISO247™; tube; Ifsm: 325A
Max. forward impulse current: 325A
Gate current: 60/80mA
Max. off-state voltage: 1.2kV
Max. load current: 30A
Kind of package: tube
Case: ISO247™
Typ of triac: standard
Mounting: THT
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH230N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH320N10T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
| MCB40P1200LB-TRR |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: double series
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: double series
Produkt ist nicht verfügbar
Mindestbestellmenge: 200 Stücke
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Stück im Wert von UAH
| MCB40P1200LB-TUB |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSEP8-12A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 40A; TO220AC; 60W; 40ns
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 1.96V
Load current: 8A
Max. forward impulse current: 40A
Power dissipation: 60W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 40A; TO220AC; 60W; 40ns
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 1.96V
Load current: 8A
Max. forward impulse current: 40A
Power dissipation: 60W
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)
| IX4426MTR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Mounting: SMD
Supply voltage: 4.5...30V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Mounting: SMD
Supply voltage: 4.5...30V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
auf Bestellung 1998 Stücke:
Lieferzeit 14-21 Tag (e)
| IX4426NTR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Mounting: SMD
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Mounting: SMD
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
Produkt ist nicht verfügbar
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| IX4426NE |
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Impulse rise time: 10ns
Mounting: SMD
Supply voltage: 4.5...30V
Output current: 1.5A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 8ns
Case: SOIC8
Kind of integrated circuit: low-side
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Impulse rise time: 10ns
Mounting: SMD
Supply voltage: 4.5...30V
Output current: 1.5A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 8ns
Case: SOIC8
Kind of integrated circuit: low-side
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| IX4426NETR |
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Impulse rise time: 10ns
Mounting: SMD
Supply voltage: 4.5...30V
Output current: 1.5A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 8ns
Case: SOIC8
Kind of integrated circuit: low-side
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Impulse rise time: 10ns
Mounting: SMD
Supply voltage: 4.5...30V
Output current: 1.5A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Pulse fall time: 8ns
Case: SOIC8
Kind of integrated circuit: low-side
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| IXBN42N170A |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 21A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Power dissipation: 313W
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 21A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Power dissipation: 313W
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| MMIX1G320N60B3 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Technology: BiMOSFET™; GenX3™; PT
Mounting: SMD
Case: SMPD
Kind of package: tube
Turn-on time: 107ns
Gate charge: 585nC
Turn-off time: 595ns
Gate-emitter voltage: ±20V
Collector current: 180A
Collector-emitter voltage: 600V
Pulsed collector current: 1kA
Power dissipation: 1kW
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Technology: BiMOSFET™; GenX3™; PT
Mounting: SMD
Case: SMPD
Kind of package: tube
Turn-on time: 107ns
Gate charge: 585nC
Turn-off time: 595ns
Gate-emitter voltage: ±20V
Collector current: 180A
Collector-emitter voltage: 600V
Pulsed collector current: 1kA
Power dissipation: 1kW
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| OMA160 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Turn-on time: 125µs
Switched voltage: max. 250V AC; max. 250V DC
Max. operating current: 50mA
Turn-off time: 125µs
Control current max.: 50mA
On-state resistance: 100Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Turn-on time: 125µs
Switched voltage: max. 250V AC; max. 250V DC
Max. operating current: 50mA
Turn-off time: 125µs
Control current max.: 50mA
On-state resistance: 100Ω
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1560G |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Mounting: THT
Case: DIP8
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 0.1ms
Switched voltage: max. 60V AC; max. 60V DC
Max. operating current: 300mA
Turn-off time: 400µs
Control current max.: 50mA
On-state resistance: 5.6Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Mounting: THT
Case: DIP8
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 0.1ms
Switched voltage: max. 60V AC; max. 60V DC
Max. operating current: 300mA
Turn-off time: 400µs
Control current max.: 50mA
On-state resistance: 5.6Ω
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEP30-06B |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO247-2; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 2.51V
Power dissipation: 165W
Reverse recovery time: 25ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO247-2; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 2.51V
Power dissipation: 165W
Reverse recovery time: 25ns
Technology: HiPerFRED™
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEP30-06A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO247-2; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 1.25V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 250A; TO247-2; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 1.25V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEP30-06BR |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: ISOPLUS247™
Max. forward voltage: 1.61V
Power dissipation: 135W
Reverse recovery time: 25ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: ISOPLUS247™
Max. forward voltage: 1.61V
Power dissipation: 135W
Reverse recovery time: 25ns
Technology: HiPerFRED™
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYH40N90C3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 81ns
Turn-off time: 237ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 81ns
Turn-off time: 237ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYH40N90C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 81ns
Turn-off time: 237ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 81ns
Turn-off time: 237ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYX140N90C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 122ns
Turn-off time: 0.3µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 122ns
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LCC110 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPDT
Insulation voltage: 3.75kV
Turn-on time: 4ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPDT
Insulation voltage: 3.75kV
Turn-on time: 4ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
| LCC110S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPDT
Insulation voltage: 3.75kV
Turn-on time: 4ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPDT
Insulation voltage: 3.75kV
Turn-on time: 4ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
| LCC110P |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPDT
Insulation voltage: 3.75kV
Turn-on time: 4ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPDT
Insulation voltage: 3.75kV
Turn-on time: 4ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LCC110PTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPDT
Insulation voltage: 3.75kV
Turn-on time: 4ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPDT
Insulation voltage: 3.75kV
Turn-on time: 4ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| LCC110STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPDT
Insulation voltage: 3.75kV
Turn-on time: 4ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPDT
Insulation voltage: 3.75kV
Turn-on time: 4ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| LCC120 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LCC120S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
auf Bestellung 452 Stücke:
Lieferzeit 14-21 Tag (e)
| LCC120STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
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Mindestbestellmenge: 1000 Stücke
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| LAA110 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Control current max.: 50mA
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Control current max.: 50mA
Kind of output: MOSFET
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)
| LAA110PL |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFK80N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO264P
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO264P
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH80N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
On-state resistance: 38mΩ
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 890W
Gate charge: 0.14µC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
On-state resistance: 38mΩ
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 890W
Gate charge: 0.14µC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-3
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH80N65X2-4 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4
Type of transistor: N-MOSFET
On-state resistance: 38mΩ
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 890W
Gate charge: 0.14µC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4
Type of transistor: N-MOSFET
On-state resistance: 38mΩ
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 890W
Gate charge: 0.14µC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-4
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH80N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 465ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 465ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFT80N65X2HV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MCC56-16io1B |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.6kA
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.6kA
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYH120N65C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 260A; 1.36kW; TO247-3
Type of transistor: IGBT
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 260A
Collector-emitter voltage: 650V
Pulsed collector current: 620A
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 260A; 1.36kW; TO247-3
Type of transistor: IGBT
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 260A
Collector-emitter voltage: 650V
Pulsed collector current: 620A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXFB44N100P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP44N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 130W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
On-state resistance: 30mΩ
Reverse recovery time: 60ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 130W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
On-state resistance: 30mΩ
Reverse recovery time: 60ns
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)
| MMIX1F44N100Q3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 694W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 264nC
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 694W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 264nC
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFA4N100P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO263
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO263
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFA4N100Q |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 150W
Case: TO263AA
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Technology: HiPerFET™
Reverse recovery time: 250ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 150W
Case: TO263AA
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Technology: HiPerFET™
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFP4N100PM |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.1A
Pulsed drain current: 8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.1A
Pulsed drain current: 8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH4N100L |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 290W
Case: TO247-3
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.1µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 290W
Case: TO247-3
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.1µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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Stück im Wert von UAH
| IXFB44N100Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 44A; 1560W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.56kW
Case: PLUS264™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 264nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 44A; 1560W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.56kW
Case: PLUS264™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 264nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGA48N60C3-TRL |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 300W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 300W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 300W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 300W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| IXTA110N055T2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTQ36P15P |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MCMA550PD1600PTSF |
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 550A; SimBus F; Ifsm: 13kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. load current: 864A
Max. forward impulse current: 13kA
Load current: 550A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 550A; SimBus F; Ifsm: 13kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. load current: 864A
Max. forward impulse current: 13kA
Load current: 550A
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| DSEI12-10A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; tube; Ifsm: 75A; TO220AC; 78W; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 75A
Case: TO220AC
Max. forward voltage: 2.7V
Heatsink thickness: 2.29...2.79mm
Power dissipation: 78W
Reverse recovery time: 50ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; tube; Ifsm: 75A; TO220AC; 78W; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 75A
Case: TO220AC
Max. forward voltage: 2.7V
Heatsink thickness: 2.29...2.79mm
Power dissipation: 78W
Reverse recovery time: 50ns
Technology: FRED
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1001N |
|
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 30V
Insulation voltage: 1.5kV
Type of optocoupler: optocoupler
Turn-on time: 1µs
Case: SOP4
Turn-off time: 30µs
Number of channels: 1
Mounting: SMD
Collector-emitter voltage: 30V
CTR@If: 100-800%@0.2mA
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 30V
Insulation voltage: 1.5kV
Type of optocoupler: optocoupler
Turn-on time: 1µs
Case: SOP4
Turn-off time: 30µs
Number of channels: 1
Mounting: SMD
Collector-emitter voltage: 30V
CTR@If: 100-800%@0.2mA
Kind of output: transistor
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| CPC1001NTR |
|
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Operating temperature: -40...85°C
Insulation voltage: 1.5kV
Type of optocoupler: optocoupler
Turn-on time: 1µs
Switched voltage: max. 30V DC
Case: SOP4
Max. operating current: 0.1A
Turn-off time: 30µs
Number of channels: 1
Control current max.: 5mA
Mounting: SMD
CTR@If: 100-800%@0.2mA
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Operating temperature: -40...85°C
Insulation voltage: 1.5kV
Type of optocoupler: optocoupler
Turn-on time: 1µs
Switched voltage: max. 30V DC
Case: SOP4
Max. operating current: 0.1A
Turn-off time: 30µs
Number of channels: 1
Control current max.: 5mA
Mounting: SMD
CTR@If: 100-800%@0.2mA
Kind of output: transistor
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Mindestbestellmenge: 2000 Stücke
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