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DSB60C30HB DSB60C30HB IXYS DSB60C30HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 570A
Power dissipation: 130W
Case: TO247-3
Kind of package: tube
Semiconductor structure: common cathode; double
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DSB60C45HB DSB60C45HB IXYS DSB60C45HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.58V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.58V
Max. forward impulse current: 570A
Power dissipation: 130W
Kind of package: tube
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DSB60C45PB DSB60C45PB IXYS DSB60C45PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.6V
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
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IXYP8N90C3D1 IXYP8N90C3D1 IXYS IXYA(P)8N90C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Collector current: 8A
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Gate-emitter voltage: ±20V
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IXYP8N90C3 IXYP8N90C3 IXYS IXYP(y)8N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Collector current: 8A
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Gate-emitter voltage: ±20V
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IXBOD2-56R IXBOD2-56R IXYS _Katalog LF_IXYS_WESTCODE_2021.pdf Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; 2nd Gen; 5.6kV; bulk
Mounting: THT
Type of thyristor: BOD x4
Case: BOD
Max. load current: 0.9A
Breakover voltage: 5.6kV
Technology: 2nd Gen
Kind of package: bulk
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IXFH120N25X3 IXFH120N25X3 IXYS IXFH(T,Q)120N25X3_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
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IXFH120N20P IXFH120N20P IXYS IXFH(K)120N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Technology: HiPerFET™; Polar™
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IXFH120N15P IXFH120N15P IXYS IXF_120N15P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
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DSEI120-12A DSEI120-12A IXYS dsei120-12a.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
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DSEI120-12AZ-TUB DSEI120-12AZ-TUB IXYS DSEI120-12AZ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AA; Ufmax: 1.55V
Power dissipation: 357W
Case: TO268AA
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
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DSEI12-12A DSEI12-12A IXYS DSEI12-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
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DSEI12-12AZ-TRL IXYS Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 50ns; D2PAK,TO263AB; Ufmax: 2.6V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 2.6V
Max. forward impulse current: 75A
Technology: FRED
Kind of package: reel; tape
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DSEI12-12AZ-TUB IXYS DSEI12-12AZ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
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IXTA100N04T2 IXTA100N04T2 IXYS IXTA(P)100N04T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO263
On-state resistance: 7mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
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IXA30RG1200DHGLB IXA30RG1200DHGLB IXYS IXA30RG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of semiconductor module: IGBT
Power dissipation: 147W
Technology: ISOPLUS™; Sonic FRD™
Pulsed collector current: 75A
Max. off-state voltage: 1.2kV
Electrical mounting: SMT
Semiconductor structure: diode/transistor
Case: SMPD-B
Gate-emitter voltage: ±20V
Collector current: 30A
Topology: boost chopper
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IXA20PG1200DHGLB IXA20PG1200DHGLB IXYS IXA20PG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Electrical mounting: SMT
Type of semiconductor module: IGBT
Power dissipation: 130W
Technology: ISOPLUS™; Sonic FRD™
Pulsed collector current: 45A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: SMPD-B
Gate-emitter voltage: ±20V
Collector current: 23A
Topology: IGBT half-bridge
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CLA30E1200HB CLA30E1200HB IXYS CLA30E1200HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 28mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO247AD
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 0.3kA
Kind of package: tube
Gate current: 28mA
Type of thyristor: thyristor
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DCG10P1200HR DCG10P1200HR IXYS DCG10P1200HR.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 12.5A; ISO247™; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12.5A
Semiconductor structure: double series
Case: ISO247™
Max. forward voltage: 2.2V
Max. forward impulse current: 750A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
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DCG17P1200HR DCG17P1200HR IXYS DCG17P1200HR.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18A; ISO247™; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: double series
Case: ISO247™
Max. forward voltage: 2.2V
Max. forward impulse current: 1kA
Kind of package: tube
Features of semiconductor devices: ultrafast switching
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IXFN100N50P IXFN100N50P IXYS 99497.pdf description Category: Transistor modules
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 49mΩ
Technology: HiPerFET™
Drain current: 75A
Pulsed drain current: 250A
Drain-source voltage: 500V
Power dissipation: 1.04kW
Type of semiconductor module: MOSFET transistor
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CPC1973Y CPC1973Y IXYS CPC1973.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 5ms
Switched voltage: max. 400V AC
Case: SIP4
Max. operating current: 0.35mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 5Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Kind of output: MOSFET
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CPC1302G CPC1302G IXYS CPC1302.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V
Kind of output: Darlington
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Number of channels: 2
Collector-emitter voltage: 350V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
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CLA100PD1200NA CLA100PD1200NA IXYS Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Gate current: 40/80mA
Max. forward voltage: 1.21V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 100A
Max. load current: 150A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.83V
Case: SOT227B
Max. forward impulse current: 1.5kA
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IXGN200N60B3 IXGN200N60B3 IXYS ixgn200n60b3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Power dissipation: 830W
Technology: GenX3™; PT
Mechanical mounting: screw
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DSEI2X61-02A DSEI2X61-02A IXYS DSEI2x61-02A.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 71A x2
Case: SOT227B
Max. forward voltage: 0.88V
Max. forward impulse current: 0.95kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 142A
Kind of package: tube
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DSEC120-12AK DSEC120-12AK IXYS Littelfuse-Power-Semiconductors-DSEC120-12AK-Datasheet?assetguid=6d7c4a83-944f-41eb-8b81-8f646ced8d79 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; Ifsm: 500A; TO264; tube; 330W
Reverse recovery time: 40ns
Mounting: THT
Max. forward impulse current: 0.5kA
Max. forward voltage: 2.66V
Power dissipation: 330W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Load current: 60A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO264
Type of diode: rectifying
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IXFH26N50P3 IXFH26N50P3 IXYS IXFH26N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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CLA80MT1200NHB CLA80MT1200NHB IXYS CLA80MT1200NHB.pdf Category: Triacs
Description: Triac; 1.2kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 440A
Case: TO247-3
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
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CLA60MT1200NHB CLA60MT1200NHB IXYS CLA60MT1200NHB.pdf Category: Triacs
Description: Triac; 1.2kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 325A
Mounting: THT
Type of thyristor: triac
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
Kind of package: tube
Case: TO247-3
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CLA60MT1200NHR CLA60MT1200NHR IXYS CLA60MT1200NHR.pdf Category: Triacs
Description: Triac; 1.2kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 325A
Mounting: THT
Type of thyristor: triac
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
Kind of package: tube
Case: ISO247™
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IXFH230N10T IXFH230N10T IXYS IXFH230N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: thrench gate power mosfet
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10+10.34 EUR
30+8.43 EUR
120+8.34 EUR
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IXFH320N10T2 IXFH320N10T2 IXYS IXFH(T)320N10T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
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MCB40P1200LB-TRR IXYS MCB40P1200LB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: double series
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MCB40P1200LB-TUB IXYS MCB40P1200LB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
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DSEP8-12A DSEP8-12A IXYS DSEP8-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 40A; TO220AC; 60W; 40ns
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 1.96V
Load current: 8A
Max. forward impulse current: 40A
Power dissipation: 60W
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IX4426MTR IX4426MTR IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Mounting: SMD
Number of channels: 2
Supply voltage: 4.5...30V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
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88+0.98 EUR
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IX4426NTR IX4426NTR IXYS littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
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IX4426NE IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Case: SOIC8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: non-inverting
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 1.5A
Pulse fall time: 8ns
Impulse rise time: 10ns
Number of channels: 2
Supply voltage: 4.5...30V
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IX4426NETR IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Case: SOIC8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: non-inverting
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 1.5A
Pulse fall time: 8ns
Impulse rise time: 10ns
Number of channels: 2
Supply voltage: 4.5...30V
Produkt ist nicht verfügbar
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IXBN42N170A IXBN42N170A IXYS IXBN42N170A.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 21A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Power dissipation: 313W
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
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MMIX1G320N60B3 IXYS MMIX1G320N60B3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Technology: BiMOSFET™; GenX3™; PT
Mounting: SMD
Case: SMPD
Kind of package: tube
Turn-on time: 107ns
Gate charge: 585nC
Turn-off time: 595ns
Gate-emitter voltage: ±20V
Collector current: 180A
Collector-emitter voltage: 600V
Pulsed collector current: 1kA
Power dissipation: 1kW
Type of transistor: IGBT
Produkt ist nicht verfügbar
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OMA160 OMA160 IXYS OMA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
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CPC1560G CPC1560G IXYS CPC1560.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Mounting: THT
Case: DIP8
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 0.1ms
Switched voltage: max. 60V AC; max. 60V DC
Max. operating current: 300mA
Turn-off time: 400µs
Control current max.: 50mA
On-state resistance: 5.6Ω
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DSEP30-06B DSEP30-06B IXYS media?resourcetype=datasheets&itemid=9922dd98-2752-4f64-b2f8-12debebce6e5&filename=littelfuse-power-semiconductors-dsep30-06b-datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-2
Max. forward voltage: 2.51V
Power dissipation: 165W
Reverse recovery time: 25ns
Technology: HiPerFRED™
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DSEP30-06A DSEP30-06A IXYS DSEP30-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-2
Max. forward voltage: 1.25V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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DSEP30-06BR DSEP30-06BR IXYS DSEP30-06BR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: ISOPLUS247™
Max. forward voltage: 1.61V
Power dissipation: 135W
Reverse recovery time: 25ns
Technology: HiPerFRED™
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11+8.31 EUR
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IXYH40N90C3D1 IXYH40N90C3D1 IXYS IXYH40N90C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 81ns
Turn-off time: 237ns
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IXYH40N90C3 IXYH40N90C3 IXYS IXYH40N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 81ns
Turn-off time: 237ns
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IXYX140N90C3 IXYX140N90C3 IXYS IXYK(X)140N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 122ns
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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LCC110 LCC110 IXYS LCC110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
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9+10.56 EUR
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LCC110S LCC110S IXYS lcc110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
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LCC110P LCC110P IXYS LCC110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
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LCC110PTR IXYS LCC110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
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LCC110STR IXYS LCC110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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LCC120 LCC120 IXYS LCC120.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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LCC120S LCC120S IXYS LCC120.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
auf Bestellung 452 Stücke:
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10+11.78 EUR
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LCC120STR IXYS LCC120.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
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 Mindestbestellmenge: 1000 Stücke
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LAA110 LAA110 IXYS LAA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 365 Stücke:
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8+10.64 EUR
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LAA110PL LAA110PL IXYS LAA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 295 Stücke:
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8+11.07 EUR
10+9.75 EUR
100+8.54 EUR
250+8.07 EUR
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DSB60C30HB DSB60C30HB.pdf
DSB60C30HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 570A
Power dissipation: 130W
Case: TO247-3
Kind of package: tube
Semiconductor structure: common cathode; double
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DSB60C45HB DSB60C45HB.pdf
DSB60C45HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.58V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.58V
Max. forward impulse current: 570A
Power dissipation: 130W
Kind of package: tube
Produkt ist nicht verfügbar
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DSB60C45PB DSB60C45PB.pdf
DSB60C45PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.6V
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
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IXYP8N90C3D1 IXYA(P)8N90C3D1.pdf
IXYP8N90C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Collector current: 8A
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Gate-emitter voltage: ±20V
auf Bestellung 106 Stücke:
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16+5.38 EUR
18+4.83 EUR
20+4.27 EUR
50+3.84 EUR
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IXYP8N90C3 IXYP(y)8N90C3.pdf
IXYP8N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Collector current: 8A
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IXBOD2-56R _Katalog LF_IXYS_WESTCODE_2021.pdf
IXBOD2-56R
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; 2nd Gen; 5.6kV; bulk
Mounting: THT
Type of thyristor: BOD x4
Case: BOD
Max. load current: 0.9A
Breakover voltage: 5.6kV
Technology: 2nd Gen
Kind of package: bulk
Produkt ist nicht verfügbar
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IXFH120N25X3 IXFH(T,Q)120N25X3_HV.pdf
IXFH120N25X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
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IXFH120N20P IXFH(K)120N20P.pdf
IXFH120N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Technology: HiPerFET™; Polar™
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IXFH120N15P IXF_120N15P.pdf
IXFH120N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
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DSEI120-12A description dsei120-12a.pdf
DSEI120-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
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DSEI120-12AZ-TUB DSEI120-12AZ.pdf
DSEI120-12AZ-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AA; Ufmax: 1.55V
Power dissipation: 357W
Case: TO268AA
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
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DSEI12-12A DSEI12-12A.pdf
DSEI12-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 109 Stücke:
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DSEI12-12AZ-TRL
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 50ns; D2PAK,TO263AB; Ufmax: 2.6V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 2.6V
Max. forward impulse current: 75A
Technology: FRED
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DSEI12-12AZ-TUB DSEI12-12AZ.pdf
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Produkt ist nicht verfügbar
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IXTA100N04T2 IXTA(P)100N04T2.pdf
IXTA100N04T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO263
On-state resistance: 7mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
Produkt ist nicht verfügbar
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IXA30RG1200DHGLB IXA30RG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf
IXA30RG1200DHGLB
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of semiconductor module: IGBT
Power dissipation: 147W
Technology: ISOPLUS™; Sonic FRD™
Pulsed collector current: 75A
Max. off-state voltage: 1.2kV
Electrical mounting: SMT
Semiconductor structure: diode/transistor
Case: SMPD-B
Gate-emitter voltage: ±20V
Collector current: 30A
Topology: boost chopper
auf Bestellung 38 Stücke:
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IXA20PG1200DHGLB IXA20PG1200DHGLB.pdf SMPD MOSFET and IGBTs_Product Brief.pdf
IXA20PG1200DHGLB
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Electrical mounting: SMT
Type of semiconductor module: IGBT
Power dissipation: 130W
Technology: ISOPLUS™; Sonic FRD™
Pulsed collector current: 45A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: SMPD-B
Gate-emitter voltage: ±20V
Collector current: 23A
Topology: IGBT half-bridge
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CLA30E1200HB CLA30E1200HB.pdf
CLA30E1200HB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 28mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO247AD
Mounting: THT
Max. load current: 47A
Max. forward impulse current: 0.3kA
Kind of package: tube
Gate current: 28mA
Type of thyristor: thyristor
auf Bestellung 280 Stücke:
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12+7.12 EUR
14+6.33 EUR
17+5.14 EUR
18+4.86 EUR
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120+3.88 EUR
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DCG10P1200HR DCG10P1200HR.pdf
DCG10P1200HR
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 12.5A; ISO247™; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12.5A
Semiconductor structure: double series
Case: ISO247™
Max. forward voltage: 2.2V
Max. forward impulse current: 750A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
auf Bestellung 10 Stücke:
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DCG17P1200HR DCG17P1200HR.pdf
DCG17P1200HR
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18A; ISO247™; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: double series
Case: ISO247™
Max. forward voltage: 2.2V
Max. forward impulse current: 1kA
Kind of package: tube
Features of semiconductor devices: ultrafast switching
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1+140.15 EUR
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IXFN100N50P description 99497.pdf
IXFN100N50P
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 49mΩ
Technology: HiPerFET™
Drain current: 75A
Pulsed drain current: 250A
Drain-source voltage: 500V
Power dissipation: 1.04kW
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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CPC1973Y CPC1973.pdf
CPC1973Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 5ms
Switched voltage: max. 400V AC
Case: SIP4
Max. operating current: 0.35mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 5Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Kind of output: MOSFET
auf Bestellung 34 Stücke:
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CPC1302G CPC1302.pdf
CPC1302G
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V
Kind of output: Darlington
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Number of channels: 2
Collector-emitter voltage: 350V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
auf Bestellung 176 Stücke:
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CLA100PD1200NA Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969
CLA100PD1200NA
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Gate current: 40/80mA
Max. forward voltage: 1.21V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 100A
Max. load current: 150A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.83V
Case: SOT227B
Max. forward impulse current: 1.5kA
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IXGN200N60B3 ixgn200n60b3.pdf
IXGN200N60B3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Power dissipation: 830W
Technology: GenX3™; PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DSEI2X61-02A DSEI2x61-02A.pdf
DSEI2X61-02A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 71A x2
Case: SOT227B
Max. forward voltage: 0.88V
Max. forward impulse current: 0.95kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 142A
Kind of package: tube
auf Bestellung 121 Stücke:
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DSEC120-12AK Littelfuse-Power-Semiconductors-DSEC120-12AK-Datasheet?assetguid=6d7c4a83-944f-41eb-8b81-8f646ced8d79
DSEC120-12AK
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; Ifsm: 500A; TO264; tube; 330W
Reverse recovery time: 40ns
Mounting: THT
Max. forward impulse current: 0.5kA
Max. forward voltage: 2.66V
Power dissipation: 330W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Load current: 60A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO264
Type of diode: rectifying
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IXFH26N50P3 IXFH26N50P3.pdf
IXFH26N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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CLA80MT1200NHB CLA80MT1200NHB.pdf
CLA80MT1200NHB
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 440A
Case: TO247-3
Kind of package: tube
Mounting: THT
Type of thyristor: triac
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
auf Bestellung 273 Stücke:
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CLA60MT1200NHB CLA60MT1200NHB.pdf
CLA60MT1200NHB
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 325A
Mounting: THT
Type of thyristor: triac
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
Kind of package: tube
Case: TO247-3
auf Bestellung 15 Stücke:
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7+13.07 EUR
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CLA60MT1200NHR CLA60MT1200NHR.pdf
CLA60MT1200NHR
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 325A
Mounting: THT
Type of thyristor: triac
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
Kind of package: tube
Case: ISO247™
auf Bestellung 42 Stücke:
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6+14.59 EUR
10+13.1 EUR
30+12.61 EUR
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IXFH230N10T IXFH230N10T.pdf
IXFH230N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 307 Stücke:
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7+12.51 EUR
10+10.34 EUR
30+8.43 EUR
120+8.34 EUR
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IXFH320N10T2 IXFH(T)320N10T2.pdf
IXFH320N10T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
auf Bestellung 280 Stücke:
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5+17.1 EUR
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MCB40P1200LB-TRR MCB40P1200LB.pdf
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCB40P1200LB-TUB MCB40P1200LB.pdf
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
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DSEP8-12A DSEP8-12A.pdf
DSEP8-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 40A; TO220AC; 60W; 40ns
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 1.96V
Load current: 8A
Max. forward impulse current: 40A
Power dissipation: 60W
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IX4426MTR IX4426-27-28.pdf
IX4426MTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Mounting: SMD
Number of channels: 2
Supply voltage: 4.5...30V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
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75+1.14 EUR
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88+0.98 EUR
100+0.95 EUR
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IX4426NTR littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250
IX4426NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
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IX4426NE
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Case: SOIC8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: non-inverting
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 1.5A
Pulse fall time: 8ns
Impulse rise time: 10ns
Number of channels: 2
Supply voltage: 4.5...30V
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IX4426NETR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Case: SOIC8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: non-inverting
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 1.5A
Pulse fall time: 8ns
Impulse rise time: 10ns
Number of channels: 2
Supply voltage: 4.5...30V
Produkt ist nicht verfügbar
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IXBN42N170A IXBN42N170A.pdf
IXBN42N170A
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 21A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Power dissipation: 313W
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
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MMIX1G320N60B3 MMIX1G320N60B3.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Technology: BiMOSFET™; GenX3™; PT
Mounting: SMD
Case: SMPD
Kind of package: tube
Turn-on time: 107ns
Gate charge: 585nC
Turn-off time: 595ns
Gate-emitter voltage: ±20V
Collector current: 180A
Collector-emitter voltage: 600V
Pulsed collector current: 1kA
Power dissipation: 1kW
Type of transistor: IGBT
Produkt ist nicht verfügbar
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OMA160 OMA160.pdf
OMA160
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
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8+11.33 EUR
10+9.29 EUR
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CPC1560G CPC1560.pdf
CPC1560G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Mounting: THT
Case: DIP8
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 0.1ms
Switched voltage: max. 60V AC; max. 60V DC
Max. operating current: 300mA
Turn-off time: 400µs
Control current max.: 50mA
On-state resistance: 5.6Ω
auf Bestellung 146 Stücke:
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8+11.35 EUR
10+9.96 EUR
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DSEP30-06B media?resourcetype=datasheets&itemid=9922dd98-2752-4f64-b2f8-12debebce6e5&filename=littelfuse-power-semiconductors-dsep30-06b-datasheet
DSEP30-06B
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-2
Max. forward voltage: 2.51V
Power dissipation: 165W
Reverse recovery time: 25ns
Technology: HiPerFRED™
auf Bestellung 257 Stücke:
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DSEP30-06A DSEP30-06A.pdf
DSEP30-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-2
Max. forward voltage: 1.25V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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DSEP30-06BR DSEP30-06BR.pdf
DSEP30-06BR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: ISOPLUS247™
Max. forward voltage: 1.61V
Power dissipation: 135W
Reverse recovery time: 25ns
Technology: HiPerFRED™
auf Bestellung 295 Stücke:
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11+8.31 EUR
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IXYH40N90C3D1 IXYH40N90C3D1.pdf
IXYH40N90C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 81ns
Turn-off time: 237ns
auf Bestellung 300 Stücke:
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6+14.59 EUR
7+13.84 EUR
10+12.64 EUR
30+10.82 EUR
60+10.46 EUR
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IXYH40N90C3 IXYH40N90C3.pdf
IXYH40N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 81ns
Turn-off time: 237ns
Produkt ist nicht verfügbar
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IXYX140N90C3 IXYK(X)140N90C3.pdf
IXYX140N90C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 122ns
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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LCC110 LCC110.pdf
LCC110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
auf Bestellung 65 Stücke:
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9+10.56 EUR
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LCC110S lcc110.pdf
LCC110S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
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LCC110P LCC110.pdf
LCC110P
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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LCC110PTR LCC110.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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LCC110STR LCC110.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Turn-off time: 4ms
Control current max.: 50mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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LCC120 LCC120.pdf
LCC120
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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LCC120S LCC120.pdf
LCC120S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
auf Bestellung 452 Stücke:
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7+13.15 EUR
10+11.78 EUR
25+11.21 EUR
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LCC120STR LCC120.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 0.17A
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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LAA110 LAA110.pdf
LAA110
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 365 Stücke:
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8+10.64 EUR
9+9.85 EUR
10+8.75 EUR
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LAA110PL LAA110L.pdf
LAA110PL
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 295 Stücke:
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8+11.07 EUR
10+9.75 EUR
100+8.54 EUR
250+8.07 EUR
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