| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXTA1R6N100D2HV | IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263 Mounting: SMD Kind of channel: depletion Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO263 On-state resistance: 10Ω Reverse recovery time: 970ns Power dissipation: 100W Gate charge: 27nC Polarisation: unipolar Technology: Polar™ Drain current: 1.6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1117NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CPC1014NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.4A Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 2Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Operating temperature: -40...85°C Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTY44N10T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 44A Power dissipation: 130W Case: TO252 On-state resistance: 30mΩ Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 60ns Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 397 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MCC72-08io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 116A Case: TO240AA Max. forward voltage: 1.82V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCC72-08io8B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 116A Case: TO240AA Max. forward voltage: 1.82V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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DSEI2X121-02A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 200V Load current: 123A x2 Case: SOT227B Max. forward voltage: 1.1V Max. forward impulse current: 1.3kA Electrical mounting: screw Max. load current: 246A Mechanical mounting: screw Kind of package: tube |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1130NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 2ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CPC1114N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC Type of relay: solid state Max. operating current: 0.4A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source Body dimensions: 4.09x3.81x2.03mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Insulation voltage: 1.5kV Turn-on time: 2ms Case: SOP4 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 2Ω Mounting: SMT Kind of output: MOSFET Contacts configuration: SPST-NC |
auf Bestellung 608 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1114NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.4A Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 2Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CS45-16IO1 | IXYS |
 Category: SMD/THT thyristorsDescription: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.6kV Max. load current: 71A Load current: 45A Gate current: 80mA Case: TO247AD Mounting: THT Kind of package: tube Max. forward impulse current: 520A |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CS45-16IO1R | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT Case: TO247AD Mounting: THT Kind of package: tube Max. forward impulse current: 520A Gate current: 80mA Max. off-state voltage: 1.6kV Load current: 45A Max. load current: 71A Type of thyristor: standard |
auf Bestellung 197 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CS45-12IO1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT Mounting: THT Max. forward impulse current: 520A Gate current: 80mA Max. off-state voltage: 1.2kV Load current: 45A Max. load current: 71A Kind of package: tube Case: TO247AD Type of thyristor: standard |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP100N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 150W Case: TO220AB On-state resistance: 7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 34ns |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP48P05T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -50V Drain current: -48A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 30mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 30ns |
auf Bestellung 291 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTY48P05T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252 Case: TO252 Mounting: SMD Kind of package: tube Power dissipation: 150W Gate charge: 53nC Polarisation: unipolar Technology: TrenchP™ Drain current: -48A Kind of channel: enhancement Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±15V On-state resistance: 30mΩ Reverse recovery time: 30ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA48P05T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263 Case: TO263 Mounting: SMD Kind of package: tube Power dissipation: 150W Gate charge: 53nC Polarisation: unipolar Technology: TrenchP™ Drain current: -48A Kind of channel: enhancement Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±15V On-state resistance: 30mΩ Reverse recovery time: 30ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA48P05T-TRL | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; 50V; 48A; 150W; D2PAK,TO263 Case: D2PAK; TO263 Mounting: SMD Power dissipation: 150W Drain current: 48A Kind of channel: enhancement Drain-source voltage: 50V Type of transistor: P-MOSFET Gate-source voltage: 15V On-state resistance: 30mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTY48P05T-TRL | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; 50V; 48A; 150W; DPAK,TO252AA Case: DPAK; TO252AA Mounting: SMD Power dissipation: 150W Drain current: 48A Kind of channel: enhancement Drain-source voltage: 50V Type of transistor: P-MOSFET Gate-source voltage: 15V On-state resistance: 30mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NCD2400MTR | IXYS |
Category: Integrated circuits - others Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6 Mounting: SMD Operating temperature: -40...105°C Number of positions: 512 Kind of memory: EEPROM; non-volatile Supply voltage: 2.5...5.5V Type of integrated circuit: digital capacitor Integrated circuit features: programmable Application: for OCXO application Kind of package: reel; tape Case: DFN6 Interface: 2-wire; I2C Capacitance: 1.7...203pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXDH20N120 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 175ns Turn-off time: 570ns |
auf Bestellung 176 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1966Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase Type of relay: solid state Mounting: THT Relay variant: 1-phase Body dimensions: 21.08x10.16x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 240V AC Case: SIP4 Max. operating current: 3A Control current max.: 50mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1966YX6 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase Type of relay: solid state Mounting: THT Relay variant: 1-phase Body dimensions: 21.08x10.16x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Turn-on time: 500µs Switching method: instantaneous switching Switched voltage: max. 600V AC Case: SIP4 Max. operating current: 3A Control current max.: 50mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH60N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 60A Power dissipation: 1.04kW Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1906Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC Type of relay: solid state Mounting: THT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 21.08x10.16x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 10ms Switched voltage: max. 60V AC; max. 60V DC Case: SIP4 Max. operating current: 2A Turn-off time: 5ms Control current max.: 50mA On-state resistance: 0.3Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MIXA10WB1200TED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT Power dissipation: 60W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Pulsed collector current: 30A Application: motors; photovoltaics Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Semiconductor structure: diode/transistor Case: E2-Pack Gate-emitter voltage: ±20V Collector current: 12A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CLB30I1200HB | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT Max. off-state voltage: 1.2kV Load current: 30A Max. forward impulse current: 325A Case: TO247AD Gate current: 50mA Max. load current: 47A Kind of package: tube Type of thyristor: standard Mounting: THT |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CLB30I1200PZ-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV Max. off-state voltage: 1.2kV Load current: 30A Max. forward impulse current: 255A Case: TO263ABHV Gate current: 30/50mA Max. load current: 47A Kind of package: tube Type of thyristor: standard Mounting: SMD |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CLB30I1200PZ-TRL | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape Case: D2PAK Mounting: SMD Max. off-state voltage: 1.2kV Load current: 30A Kind of package: reel; tape Type of thyristor: thyristor Gate current: 30mA Max. load current: 47A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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LBA110 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Control current max.: 50mA |
auf Bestellung 105 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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LBA110S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
auf Bestellung 227 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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LBA110L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP8 Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1010N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 11.5Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CPC1010NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 11.5Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CPC1016NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 100V AC; max. 100V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Operating temperature: -40...85°C Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CPC1019NTR | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 750mA Switched voltage: max. 60V DC Manufacturer series: OptoMOS On-state resistance: 0.6Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTQ200N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns Case: TO3P Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 152nC Reverse recovery time: 76ns On-state resistance: 5.5mΩ Drain current: 200A Drain-source voltage: 100V Power dissipation: 550W Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXGP20N120B | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Gate charge: 72nC Kind of package: tube Turn-off time: 150ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXXH80N65B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Mounting: THT Collector-emitter voltage: 650V Power dissipation: 625W Gate charge: 0.12µC Technology: GenX4™; Trench; XPT™ Pulsed collector current: 430A Type of transistor: IGBT Turn-on time: 125ns Kind of package: tube Case: TO247-3 Turn-off time: 222ns Gate-emitter voltage: ±20V Collector current: 80A |
auf Bestellung 239 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DPF80C200HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W Kind of package: tube Case: TO247-3 Features of semiconductor devices: fast switching Mounting: THT Technology: HiPerFRED™ 2nd Gen Type of diode: rectifying Reverse recovery time: 55ns Max. forward voltage: 1.22V Power dissipation: 215W Load current: 40A x2 Max. off-state voltage: 200V Max. forward impulse current: 560A Semiconductor structure: common cathode; double |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH110N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 110A Power dissipation: 694W Case: TO247-3 On-state resistance: 26mΩ Mounting: THT Gate charge: 157nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 256 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP110N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 180W Case: TO220AB On-state resistance: 6.6mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 38ns |
auf Bestellung 278 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH110N15T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns Case: TO247-3 Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 150nC Reverse recovery time: 85ns On-state resistance: 13mΩ Drain current: 110A Drain-source voltage: 150V Power dissipation: 480W |
auf Bestellung 284 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH110N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 110A Power dissipation: 694W Case: TO247-3 On-state resistance: 26mΩ Mounting: THT Gate charge: 157nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 170ns Features of semiconductor devices: thrench gate power mosfet |
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IXFA110N15T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 110A Power dissipation: 480W Case: TO263 On-state resistance: 13mΩ Mounting: SMD Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 85ns |
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IXFH110N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 480W Case: TO247-3 On-state resistance: 15mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Polar™ |
auf Bestellung 171 Stücke: Lieferzeit 14-21 Tag (e) |
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DSB60C30PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V Mounting: THT Type of diode: Schottky rectifying Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.49V Load current: 30A x2 Max. off-state voltage: 30V Max. forward impulse current: 530A Power dissipation: 145W Case: TO220AB Kind of package: tube Semiconductor structure: common cathode; double |
auf Bestellung 160 Stücke: Lieferzeit 14-21 Tag (e) |
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DSB60C60PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V Mounting: THT Type of diode: Schottky rectifying Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.69V Load current: 30A x2 Max. off-state voltage: 60V Max. forward impulse current: 490A Power dissipation: 145W Case: TO220AB Kind of package: tube Semiconductor structure: common cathode; double |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DSB60C30HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V Mounting: THT Type of diode: Schottky rectifying Max. forward voltage: 0.47V Load current: 30A x2 Max. off-state voltage: 30V Max. forward impulse current: 570A Power dissipation: 130W Case: TO247-3 Kind of package: tube Semiconductor structure: common cathode; double |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DSB60C45HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.58V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 0.58V Max. forward impulse current: 570A Power dissipation: 130W Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DSB60C45PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.6V Max. forward impulse current: 490A Power dissipation: 145W Kind of package: tube Heatsink thickness: 1.14...1.39mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXYP8N90C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3 Mounting: THT Collector-emitter voltage: 900V Power dissipation: 125W Gate charge: 13.3nC Technology: GenX3™; Planar; XPT™ Pulsed collector current: 48A Type of transistor: IGBT Turn-on time: 39ns Kind of package: tube Case: TO220-3 Turn-off time: 238ns Gate-emitter voltage: ±20V Collector current: 8A |
auf Bestellung 105 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYP8N90C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3 Mounting: THT Collector-emitter voltage: 900V Power dissipation: 125W Gate charge: 13.3nC Technology: GenX3™; Planar; XPT™ Pulsed collector current: 48A Type of transistor: IGBT Turn-on time: 39ns Kind of package: tube Case: TO220-3 Turn-off time: 238ns Gate-emitter voltage: ±20V Collector current: 8A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXBOD2-56R | IXYS |
Category: Thyristors - others Description: Thyristor: BOD x4; 0.9A; BOD; THT; 2nd Gen; 5.6kV; bulk Mounting: THT Type of thyristor: BOD x4 Case: BOD Max. load current: 0.9A Breakover voltage: 5.6kV Technology: 2nd Gen Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH120N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 480W Case: TO247-3 On-state resistance: 12mΩ Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 140ns Features of semiconductor devices: ultra junction x-class |
auf Bestellung 170 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH120N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 120A Power dissipation: 714W Case: TO247-3 On-state resistance: 22mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 100ns Technology: HiPerFET™; Polar™ |
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IXFH120N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 120A Power dissipation: 600W Case: TO247-3 On-state resistance: 16mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 207 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEI120-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 109A; Ifsm: 540A; TO247-2; tube; 357W Mounting: THT Case: TO247-2 Max. forward impulse current: 540A Max. forward voltage: 1.55V Power dissipation: 357W Technology: FRED Features of semiconductor devices: fast switching Max. off-state voltage: 1.2kV Load current: 109A Kind of package: tube Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 40ns |
auf Bestellung 191 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEI120-12AZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AA; Ufmax: 1.55V Mounting: SMD Case: TO268AA Max. forward impulse current: 540A Max. forward voltage: 1.55V Power dissipation: 357W Technology: FRED Features of semiconductor devices: fast switching Max. off-state voltage: 1.2kV Load current: 109A Kind of package: tube Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 40ns |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEI12-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 11A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO220AC Max. forward voltage: 2.2V Max. forward impulse current: 75A Power dissipation: 78W Technology: FRED Kind of package: tube Heatsink thickness: 1.14...1.39mm |
auf Bestellung 109 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXTA1R6N100D2HV |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Kind of channel: depletion
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 10Ω
Reverse recovery time: 970ns
Power dissipation: 100W
Gate charge: 27nC
Polarisation: unipolar
Technology: Polar™
Drain current: 1.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Kind of channel: depletion
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 10Ω
Reverse recovery time: 970ns
Power dissipation: 100W
Gate charge: 27nC
Polarisation: unipolar
Technology: Polar™
Drain current: 1.6A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPC1117NTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| CPC1014NTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| IXTY44N10T |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO252
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 60ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO252
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 60ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 397 Stücke:
Lieferzeit 14-21 Tag (e)
| MCC72-08io1B |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCC72-08io8B |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
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| DSEI2X121-02A |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 123A x2
Case: SOT227B
Max. forward voltage: 1.1V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Max. load current: 246A
Mechanical mounting: screw
Kind of package: tube
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 123A x2
Case: SOT227B
Max. forward voltage: 1.1V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Max. load current: 246A
Mechanical mounting: screw
Kind of package: tube
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1130NTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| CPC1114N |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Insulation voltage: 1.5kV
Turn-on time: 2ms
Case: SOP4
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 2Ω
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Insulation voltage: 1.5kV
Turn-on time: 2ms
Case: SOP4
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 2Ω
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NC
auf Bestellung 608 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1114NTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| CS45-16IO1 |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| CS45-16IO1R |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
Gate current: 80mA
Max. off-state voltage: 1.6kV
Load current: 45A
Max. load current: 71A
Type of thyristor: standard
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
Gate current: 80mA
Max. off-state voltage: 1.6kV
Load current: 45A
Max. load current: 71A
Type of thyristor: standard
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)
| CS45-12IO1 |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT
Mounting: THT
Max. forward impulse current: 520A
Gate current: 80mA
Max. off-state voltage: 1.2kV
Load current: 45A
Max. load current: 71A
Kind of package: tube
Case: TO247AD
Type of thyristor: standard
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT
Mounting: THT
Max. forward impulse current: 520A
Gate current: 80mA
Max. off-state voltage: 1.2kV
Load current: 45A
Max. load current: 71A
Kind of package: tube
Case: TO247AD
Type of thyristor: standard
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTP100N04T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTP48P05T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 30ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 30ns
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTY48P05T |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Case: TO252
Mounting: SMD
Kind of package: tube
Power dissipation: 150W
Gate charge: 53nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 30ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Case: TO252
Mounting: SMD
Kind of package: tube
Power dissipation: 150W
Gate charge: 53nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
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| IXTA48P05T |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Power dissipation: 150W
Gate charge: 53nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 30ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Power dissipation: 150W
Gate charge: 53nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
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| IXTA48P05T-TRL |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Power dissipation: 150W
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: P-MOSFET
Gate-source voltage: 15V
On-state resistance: 30mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Power dissipation: 150W
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: P-MOSFET
Gate-source voltage: 15V
On-state resistance: 30mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXTY48P05T-TRL |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; DPAK,TO252AA
Case: DPAK; TO252AA
Mounting: SMD
Power dissipation: 150W
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: P-MOSFET
Gate-source voltage: 15V
On-state resistance: 30mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; DPAK,TO252AA
Case: DPAK; TO252AA
Mounting: SMD
Power dissipation: 150W
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: P-MOSFET
Gate-source voltage: 15V
On-state resistance: 30mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| NCD2400MTR |
|
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Mounting: SMD
Operating temperature: -40...105°C
Number of positions: 512
Kind of memory: EEPROM; non-volatile
Supply voltage: 2.5...5.5V
Type of integrated circuit: digital capacitor
Integrated circuit features: programmable
Application: for OCXO application
Kind of package: reel; tape
Case: DFN6
Interface: 2-wire; I2C
Capacitance: 1.7...203pF
Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Mounting: SMD
Operating temperature: -40...105°C
Number of positions: 512
Kind of memory: EEPROM; non-volatile
Supply voltage: 2.5...5.5V
Type of integrated circuit: digital capacitor
Integrated circuit features: programmable
Application: for OCXO application
Kind of package: reel; tape
Case: DFN6
Interface: 2-wire; I2C
Capacitance: 1.7...203pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| IXDH20N120 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 175ns
Turn-off time: 570ns
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 175ns
Turn-off time: 570ns
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1966Y |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 240V AC
Case: SIP4
Max. operating current: 3A
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 240V AC
Case: SIP4
Max. operating current: 3A
Control current max.: 50mA
Produkt ist nicht verfügbar
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| CPC1966YX6 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Turn-on time: 500µs
Switching method: instantaneous switching
Switched voltage: max. 600V AC
Case: SIP4
Max. operating current: 3A
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Turn-on time: 500µs
Switching method: instantaneous switching
Switched voltage: max. 600V AC
Case: SIP4
Max. operating current: 3A
Control current max.: 50mA
Produkt ist nicht verfügbar
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| IXFH60N50P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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| CPC1906Y |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 10ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SIP4
Max. operating current: 2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.3Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 10ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SIP4
Max. operating current: 2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.3Ω
Produkt ist nicht verfügbar
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| MIXA10WB1200TED |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Power dissipation: 60W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 30A
Application: motors; photovoltaics
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 12A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Power dissipation: 60W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 30A
Application: motors; photovoltaics
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 12A
Produkt ist nicht verfügbar
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| CLB30I1200HB |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 325A
Case: TO247AD
Gate current: 50mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: THT
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 325A
Case: TO247AD
Gate current: 50mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: THT
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
| CLB30I1200PZ-TUB |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Case: TO263ABHV
Gate current: 30/50mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: SMD
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Case: TO263ABHV
Gate current: 30/50mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: SMD
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| CLB30I1200PZ-TRL |
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| LBA110 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Control current max.: 50mA
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
| LBA110S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
| LBA110L |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1010N |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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| CPC1010NTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| CPC1016NTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| CPC1019NTR |
|
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 750mA
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
On-state resistance: 0.6Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 750mA
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
On-state resistance: 0.6Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| IXTQ200N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Case: TO3P
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 76ns
On-state resistance: 5.5mΩ
Drain current: 200A
Drain-source voltage: 100V
Power dissipation: 550W
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Case: TO3P
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 76ns
On-state resistance: 5.5mΩ
Drain current: 200A
Drain-source voltage: 100V
Power dissipation: 550W
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IXGP20N120B |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Turn-off time: 150ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Turn-off time: 150ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXXH80N65B4 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Mounting: THT
Collector-emitter voltage: 650V
Power dissipation: 625W
Gate charge: 0.12µC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 430A
Type of transistor: IGBT
Turn-on time: 125ns
Kind of package: tube
Case: TO247-3
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Mounting: THT
Collector-emitter voltage: 650V
Power dissipation: 625W
Gate charge: 0.12µC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 430A
Type of transistor: IGBT
Turn-on time: 125ns
Kind of package: tube
Case: TO247-3
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)
| DPF80C200HB |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W
Kind of package: tube
Case: TO247-3
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 55ns
Max. forward voltage: 1.22V
Power dissipation: 215W
Load current: 40A x2
Max. off-state voltage: 200V
Max. forward impulse current: 560A
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W
Kind of package: tube
Case: TO247-3
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 55ns
Max. forward voltage: 1.22V
Power dissipation: 215W
Load current: 40A x2
Max. off-state voltage: 200V
Max. forward impulse current: 560A
Semiconductor structure: common cathode; double
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH110N25T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 256 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTP110N055T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH110N15T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH110N25T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFA110N15T2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO263
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 85ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO263
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 85ns
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH110N10P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
| DSB60C30PB |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 530A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 530A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
| DSB60C60PB |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Max. forward impulse current: 490A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Max. forward impulse current: 490A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
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Im Einkaufswagen
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| DSB60C30HB |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 570A
Power dissipation: 130W
Case: TO247-3
Kind of package: tube
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 570A
Power dissipation: 130W
Case: TO247-3
Kind of package: tube
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSB60C45HB |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.58V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.58V
Max. forward impulse current: 570A
Power dissipation: 130W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.58V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.58V
Max. forward impulse current: 570A
Power dissipation: 130W
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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Stück im Wert von UAH
| DSB60C45PB |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.6V
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.6V
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXYP8N90C3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Mounting: THT
Collector-emitter voltage: 900V
Power dissipation: 125W
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Type of transistor: IGBT
Turn-on time: 39ns
Kind of package: tube
Case: TO220-3
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 8A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Mounting: THT
Collector-emitter voltage: 900V
Power dissipation: 125W
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Type of transistor: IGBT
Turn-on time: 39ns
Kind of package: tube
Case: TO220-3
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 8A
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYP8N90C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Mounting: THT
Collector-emitter voltage: 900V
Power dissipation: 125W
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Type of transistor: IGBT
Turn-on time: 39ns
Kind of package: tube
Case: TO220-3
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 8A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Mounting: THT
Collector-emitter voltage: 900V
Power dissipation: 125W
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Type of transistor: IGBT
Turn-on time: 39ns
Kind of package: tube
Case: TO220-3
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 8A
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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Stück im Wert von UAH
| IXBOD2-56R |
|
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; 2nd Gen; 5.6kV; bulk
Mounting: THT
Type of thyristor: BOD x4
Case: BOD
Max. load current: 0.9A
Breakover voltage: 5.6kV
Technology: 2nd Gen
Kind of package: bulk
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; 2nd Gen; 5.6kV; bulk
Mounting: THT
Type of thyristor: BOD x4
Case: BOD
Max. load current: 0.9A
Breakover voltage: 5.6kV
Technology: 2nd Gen
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXFH120N25X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH120N20P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Technology: HiPerFET™; Polar™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Technology: HiPerFET™; Polar™
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH120N15P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEI120-12A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; Ifsm: 540A; TO247-2; tube; 357W
Mounting: THT
Case: TO247-2
Max. forward impulse current: 540A
Max. forward voltage: 1.55V
Power dissipation: 357W
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Load current: 109A
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 40ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; Ifsm: 540A; TO247-2; tube; 357W
Mounting: THT
Case: TO247-2
Max. forward impulse current: 540A
Max. forward voltage: 1.55V
Power dissipation: 357W
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Load current: 109A
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 40ns
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEI120-12AZ-TUB |
|
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AA; Ufmax: 1.55V
Mounting: SMD
Case: TO268AA
Max. forward impulse current: 540A
Max. forward voltage: 1.55V
Power dissipation: 357W
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Load current: 109A
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 40ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AA; Ufmax: 1.55V
Mounting: SMD
Case: TO268AA
Max. forward impulse current: 540A
Max. forward voltage: 1.55V
Power dissipation: 357W
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Load current: 109A
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 40ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEI12-12A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)