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IXFT150N30X3HV

IXFT150N30X3HV IXYS


IXF_150N30X3_HV.pdf 300VProductBrief.pdf
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 254nC
Reverse recovery time: 167ns
auf Bestellung 26 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.79 EUR
5+20.82 EUR
Mindestbestellmenge: 4
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Technische Details IXFT150N30X3HV IXYS

Description: MOSFET N-CH 300V 150A TO268HV, Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-268HV (IXFT), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Power Dissipation (Max): 890W (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.

Weitere Produktangebote IXFT150N30X3HV nach Preis ab 20.46 EUR bis 35.01 EUR

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IXFT150N30X3HV IXFT150N30X3HV Hersteller : IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Ultra-Junction-IXF-150N30X3-Datasheet.PDF MOSFETs TO268 300V 150A N-CH X3CLASS
auf Bestellung 283 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.88 EUR
10+24.25 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFT150N30X3HV IXFT150N30X3HV Hersteller : Littelfuse Inc. Description: MOSFET N-CH 300V 150A TO268HV
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268HV (IXFT)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
auf Bestellung 314 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.01 EUR
30+22.58 EUR
120+20.46 EUR
Im Einkaufswagen  Stück im Wert von  UAH