DNA30E2200FE IXYS
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; Ufmax: 1.22V
Mounting: THT
Case: ISOPLUS i4-pac™ x024e
Features of semiconductor devices: high voltage
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Max. forward voltage: 1.22V
Load current: 30A
Power dissipation: 110W
Max. forward impulse current: 370A
Max. off-state voltage: 2.2kV
| Anzahl | Preis |
|---|---|
| 8+ | 9.01 EUR |
| 10+ | 7.38 EUR |
| 25+ | 7.25 EUR |
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Technische Details DNA30E2200FE IXYS
Description: DIODE GEN PURP 2.2KV 30A I4-PAC, Packaging: Tube, Package / Case: TO-251-2, IPAK, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 7pF @ 700V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: i4-PAC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 2200 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A, Current - Reverse Leakage @ Vr: 40 µA @ 2200 V.
Weitere Produktangebote DNA30E2200FE nach Preis ab 10.12 EUR bis 15.15 EUR
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DNA30E2200FE | Hersteller : IXYS |
Rectifiers High Voltage Std Rectifier Sngl Diode |
auf Bestellung 319 Stücke: Lieferzeit 10-14 Tag (e) |
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| DNA30E2200FE | Hersteller : IXYS |
Description: DIODE GEN PURP 2.2KV 30A I4-PAC Packaging: Tube Package / Case: TO-251-2, IPAK Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 7pF @ 700V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: i4-PAC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 2200 V |
auf Bestellung 227 Stücke: Lieferzeit 10-14 Tag (e) |
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