| Anzahl | Privatkunde |
|---|---|
| 1+ | 33.97 EUR |
| 10+ | 23.81 EUR |
| 100+ | 22.35 EUR |
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Technische Details IXFK88N30P IXYS
Description: MOSFET N-CH 300V 88A TO264AA, Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-264AA (IXFK), Vgs(th) (Max) @ Id: 5V @ 4mA, Power Dissipation (Max): 600W (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V, Current - Continuous Drain (Id) @ 25°C: 88A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.
Weitere Produktangebote IXFK88N30P nach Preis ab 22.34 EUR bis 85.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXFK88N30P | Littelfuse Inc. |
 Description: MOSFET N-CH 300V 88A TO264AAInput Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-264AA (IXFK) Vgs(th) (Max) @ Id: 5V @ 4mA Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
auf Bestellung 296 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFK88N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264 Mounting: THT Type of transistor: N-MOSFET Case: TO264 Kind of package: tube Polarisation: unipolar Gate charge: 180nC On-state resistance: 40mΩ Drain current: 88A Drain-source voltage: 300V Power dissipation: 600W Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXFK88N30P |
|
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 300V 88A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Description: MOSFET N-CH 300V 88A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
auf Bestellung 296 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 29.32 EUR |
| 25+ | 23.73 EUR |
| 100+ | 22.34 EUR |
| IXFK88N30P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 40mΩ
Drain current: 88A
Drain-source voltage: 300V
Power dissipation: 600W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 40mΩ
Drain current: 88A
Drain-source voltage: 300V
Power dissipation: 600W
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |