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Technische Details IXTK140N30P IXYS
Description: MOSFET N-CH 300V 140A TO264, Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-264 (IXTK), Vgs(th) (Max) @ Id: 5V @ 500µA, Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.
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IXTK140N30P | Hersteller : IXYS |
Description: MOSFET N-CH 300V 140A TO264 Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-264 (IXTK) Vgs(th) (Max) @ Id: 5V @ 500µA Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
Produkt ist nicht verfügbar |
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IXTK140N30P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264 Mounting: THT Gate charge: 185nC On-state resistance: 0.24Ω Polarisation: unipolar Kind of package: tube Gate-source voltage: ±20V Drain current: 140A Type of transistor: N-MOSFET Case: TO264 Drain-source voltage: 300V Power dissipation: 1.04kW Technology: Polar™ Reverse recovery time: 250ns Kind of channel: enhancement |
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