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Technische Details IXTK140N30P IXYS
Description: MOSFET N-CH 300V 140A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V, Vgs(th) (Max) @ Id: 5V @ 500µA, Supplier Device Package: TO-264 (IXTK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V.
Weitere Produktangebote IXTK140N30P
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IXTK140N30P | Hersteller : IXYS |
 Description: MOSFET N-CH 300V 140A TO264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V Vgs(th) (Max) @ Id: 5V @ 500µA Supplier Device Package: TO-264 (IXTK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTK140N30P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264 Mounting: THT Technology: Polar™ Type of transistor: N-MOSFET Polarisation: unipolar Reverse recovery time: 250ns Gate charge: 185nC On-state resistance: 0.24Ω Gate-source voltage: ±20V Drain current: 140A Drain-source voltage: 300V Power dissipation: 1.04kW Kind of package: tube Case: TO264 Kind of channel: enhancement |
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