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DCG17P1200HR DCG17P1200HR IXYS DCG17P1200HR.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18A; ISO247™; tube
Type of diode: Schottky rectifying
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: double series
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 2.2V
Max. forward impulse current: 1kA
Kind of package: tube
Technology: SiC
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
1+117.77 EUR
3+107.82 EUR
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DPG60C200HB DPG60C200HB IXYS Littelfuse-Power-Semiconductors-DPG60C200HB-Datasheet?assetguid=87B6D095-C8C9-4D2A-9030-B3214D70FAF8 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Reverse recovery time: 35ns
Power dissipation: 160W
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.52 EUR
13+5.86 EUR
14+5.18 EUR
30+4.75 EUR
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DHG40C1200HB DHG40C1200HB IXYS DHG40C1200HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20Ax2; tube; Ifsm: 150A; TO247-3; 140W
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 2.24V
Max. forward impulse current: 150A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Power dissipation: 140W
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.15 EUR
13+5.63 EUR
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DMA50I1200HA DMA50I1200HA IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-2
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Max. forward impulse current: 0.5kA
Kind of package: tube
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.13 EUR
17+4.45 EUR
30+3.95 EUR
120+3.35 EUR
Mindestbestellmenge: 14
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DHG20I1200HA DHG20I1200HA IXYS DHG20I1200HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 150A; TO247-2; 140W
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 2.25V
Max. forward impulse current: 150A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Power dissipation: 140W
auf Bestellung 294 Stücke:
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16+4.73 EUR
20+3.63 EUR
30+3.45 EUR
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DCG20C1200HR DCG20C1200HR IXYS DCG20C1200HR.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 12.5Ax2; ISO247™; tube
Type of diode: Schottky rectifying
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 2.2V
Max. forward impulse current: 750A
Kind of package: tube
Technology: SiC
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
4+20.38 EUR
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DCG35C1200HR DCG35C1200HR IXYS DCG35C1200HR.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18Ax2; ISO247™; tube
Type of diode: Schottky rectifying
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 2.2V
Max. forward impulse current: 1kA
Kind of package: tube
Technology: SiC
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
3+28.11 EUR
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DHG30I1200HA DHG30I1200HA IXYS DHG30I1200HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 180W
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 1.95V
Max. forward impulse current: 200A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Power dissipation: 180W
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.66 EUR
14+5.42 EUR
16+4.7 EUR
20+4.08 EUR
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DPF60C200HJ DPF60C200HJ IXYS DPF60C200HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™
Type of diode: rectifying
Case: ISOPLUS247™
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 0.88V
Max. forward impulse current: 560A
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Reverse recovery time: 35ns
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.32 EUR
19+3.89 EUR
21+3.45 EUR
30+3.27 EUR
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DPG30C200HB DPG30C200HB IXYS Littelfuse-Power-Semiconductors-DPG30C200HB-Datasheet?assetguid=C7522524-F8A5-4F62-BC19-FCC564D51D7C Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 1.25V
Max. forward impulse current: 0.24kA
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Reverse recovery time: 35ns
Power dissipation: 90W
auf Bestellung 24 Stücke:
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17+4.26 EUR
23+3.25 EUR
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IXA12IF1200HB IXA12IF1200HB IXYS IXA12IF1200HB.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: Planar; Sonic FRD™; XPT™
Type of transistor: IGBT
Gate charge: 27nC
Turn-on time: 110ns
Turn-off time: 350ns
Power dissipation: 85W
Collector current: 13A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 1.2kV
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.75 EUR
16+4.73 EUR
30+4.06 EUR
120+3.58 EUR
Mindestbestellmenge: 13
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IXTP18P10T IXTP18P10T IXYS IXT_18P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Case: TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Gate charge: 39nC
Reverse recovery time: 62ns
On-state resistance: 0.12Ω
Gate-source voltage: ±15V
Power dissipation: 83W
Kind of channel: enhancement
auf Bestellung 341 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.59 EUR
24+3.09 EUR
29+2.52 EUR
50+2 EUR
100+1.6 EUR
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MCO600-22io1 IXYS Littelfuse-Power-Semiconductors-MCO600-22io1-Datasheet?assetguid=513E57AB-C4CD-4D86-994B-0EA2FF79457F Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 600A; Y1; Ufmax: 1.34V
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2.2kV
Load current: 600A
Case: Y1
Max. forward voltage: 1.34V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCO600-20io1 IXYS Littelfuse-Power-Semiconductors-MCO600-20io1-Datasheet?assetguid=053B5CC5-F625-4018-BAE3-C7C231E84F22 Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2kV; 600A; Y1; Ufmax: 1.34V
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2kV
Load current: 600A
Case: Y1
Max. forward voltage: 1.34V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFN100N50P IXFN100N50P IXYS 99497.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 75A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 250A
Power dissipation: 1.04kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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LF21844NTR LF21844NTR IXYS LF21844NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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CPC1973Y CPC1973Y IXYS CPC1973.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 5ms
Max. operating current: 0.35mA
Turn-off time: 3ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 5Ω
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.91 EUR
10+9.58 EUR
25+8.71 EUR
Mindestbestellmenge: 7
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CPC1302G CPC1302G IXYS CPC1302.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V
Kind of output: Darlington
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Number of channels: 2
Collector-emitter voltage: 350V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.95 EUR
50+2.09 EUR
100+1.89 EUR
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CPC1302GSTR CPC1302GSTR IXYS CPC1302.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V
Collector-emitter voltage: 350V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-off time: 80µs
Turn-on time: 1µs
Trigger current: 50mA
Slew rate: 0.25V/μs
Number of channels: 2
Max. off-state voltage: 5V
auf Bestellung 76 Stücke:
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22+3.4 EUR
29+2.49 EUR
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CLA60PD1200NA CLA60PD1200NA IXYS CLA60PD1200NA.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: SOT227B
Max. forward voltage: 1.09V
Electrical mounting: screw
Max. load current: 94A
Mechanical mounting: screw
Max. forward impulse current: 935A
Kind of package: bulk
Gate current: 40/80mA
Threshold on-voltage: 0.79V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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CLA100PD1200NA CLA100PD1200NA IXYS Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 100A
Case: SOT227B
Max. forward voltage: 1.21V
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Max. forward impulse current: 1.5kA
Kind of package: bulk
Gate current: 40/80mA
Threshold on-voltage: 0.83V
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
2+40.57 EUR
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CLA110MB1200NA CLA110MB1200NA IXYS CLA110MB1200NA.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT227B
Max. forward voltage: 1.04V
Max. forward impulse current: 935A
Gate current: 40/80mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
3+26.28 EUR
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MMO62-12IO6 MMO62-12IO6 IXYS MMo62-12io6-DTE.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 30A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 0.4kA
Gate current: 100mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
3+30.97 EUR
Mindestbestellmenge: 3
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IXGN200N60B3 IXGN200N60B3 IXYS ixgn200n60b3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.2kA
Power dissipation: 830W
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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DSEI2X61-02A DSEI2X61-02A IXYS DSEI2x61-02A.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 71A x2
Case: SOT227B
Max. forward voltage: 0.88V
Electrical mounting: screw
Max. load current: 142A
Mechanical mounting: screw
Max. forward impulse current: 0.95kA
Kind of package: tube
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)
3+32.22 EUR
10+29.6 EUR
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DSEP2X91-03A DSEP2X91-03A IXYS DSEP2X91-03A-DTE.pdf description Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 90A x2
Case: SOT227B
Max. forward voltage: 1.54V
Electrical mounting: screw
Max. load current: 180A
Mechanical mounting: screw
Technology: HiPerFRED™
Max. forward impulse current: 1kA
Kind of package: tube
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
2+41.54 EUR
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DSEP2X61-03A DSEP2X61-03A IXYS DSEP2x61-03A.pdf description Category: Diode modules
Description: Module: diode; double independent; 300V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.11V
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Technology: HiPerFRED™
Max. forward impulse current: 0.6kA
Kind of package: tube
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
3+33.79 EUR
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IXFB210N20P IXFB210N20P IXYS IXFB210N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 10.5mΩ
Drain current: 210A
Power dissipation: 1.5kW
Drain-source voltage: 200V
Kind of package: tube
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IXFB210N30P3 IXFB210N30P3 IXYS IXFB210N30P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 268nC
Reverse recovery time: 250ns
On-state resistance: 14.5mΩ
Drain current: 210A
Gate-source voltage: ±20V
Power dissipation: 1890W
Drain-source voltage: 300V
Kind of package: tube
Produkt ist nicht verfügbar
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DSEC120-12AK DSEC120-12AK IXYS Littelfuse-Power-Semiconductors-DSEC120-12AK-Datasheet?assetguid=6d7c4a83-944f-41eb-8b81-8f646ced8d79 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Mounting: THT
Case: TO264
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 2.66V
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.2kV
Load current: 60A x2
Power dissipation: 330W
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
5+16.46 EUR
10+15.44 EUR
Mindestbestellmenge: 5
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IXFH26N50P3 IXFH26N50P3 IXYS IXFH26N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.08 EUR
10+7.51 EUR
11+6.68 EUR
30+6.31 EUR
Mindestbestellmenge: 8
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PS2601 PS2601 IXYS PS2601.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
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IXTP80N075L2 IXTP80N075L2 IXYS IXTA(H,P)80N075L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
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IXTA80N075L2 IXTA80N075L2 IXYS IXTA(H,P)80N075L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
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IXTH80N075L2 IXTH80N075L2 IXYS IXTA(H,P)80N075L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
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CLA80MT1200NHB CLA80MT1200NHB IXYS CLA80MT1200NHB.pdf Category: Triacs
Description: Triac; 1.2kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 440A
Type of thyristor: triac
Kind of package: tube
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
Case: TO247-3
Mounting: THT
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CLA60MT1200NHB CLA60MT1200NHB IXYS CLA60MT1200NHB.pdf Category: Triacs
Description: Triac; 1.2kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 325A
Type of thyristor: triac
Kind of package: tube
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
Case: TO247-3
Mounting: THT
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CLA60MT1200NHR CLA60MT1200NHR IXYS CLA60MT1200NHR.pdf Category: Triacs
Description: Triac; 1.2kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 325A
Type of thyristor: triac
Kind of package: tube
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
Case: ISO247™
Mounting: THT
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IXFH230N10T IXFH230N10T IXYS IXFH230N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 307 Stücke:
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IXFH320N10T2 IXFH320N10T2 IXYS IXFH(T)320N10T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
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DSA50C100HB DSA50C100HB IXYS DSA50C100HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.72V
Power dissipation: 160W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward voltage: 0.72V
Load current: 25A x2
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DSSK50-01A DSSK50-01A IXYS DSSK50-01A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.65V
Power dissipation: 135W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward voltage: 0.65V
Load current: 25A x2
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DSA30C100HB DSA30C100HB IXYS DSA30C100HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO247-3; Ufmax: 0.72V
Power dissipation: 85W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.1kV
Max. forward impulse current: 340A
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward voltage: 0.72V
Load current: 15A x2
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MCB40P1200LB-TRR IXYS MCB40P1200LB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: double series
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MCB40P1200LB-TUB IXYS MCB40P1200LB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
Produkt ist nicht verfügbar
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DSEP8-12A DSEP8-12A IXYS DSEP8-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 40A; TO220AC; 60W; 40ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.96V
Max. forward impulse current: 40A
Kind of package: tube
Power dissipation: 60W
Technology: HiPerFRED™
auf Bestellung 174 Stücke:
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IX4426MTR IX4426MTR IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
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IX4426NTR IX4426NTR IXYS littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
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IX4426NE IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Case: SOIC8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: non-inverting
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 1.5A
Pulse fall time: 8ns
Impulse rise time: 10ns
Number of channels: 2
Supply voltage: 4.5...30V
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IX4426NETR IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Case: SOIC8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: non-inverting
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 1.5A
Pulse fall time: 8ns
Impulse rise time: 10ns
Number of channels: 2
Supply voltage: 4.5...30V
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DSEP2X60-12A DSEP2X60-12A IXYS media?resourcetype=datasheets&itemid=c205d7ca-54ab-4175-bdd7-497f43ba7754&filename=Littelfuse-Power-Semiconductors-DSEP2x60-12A-Datasheet Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 60A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.52V
Max. forward impulse current: 0.8kA
Kind of package: tube
Electrical mounting: screw
Type of semiconductor module: diode
Mechanical mounting: screw
Max. load current: 120A
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IXBN42N170A IXBN42N170A IXYS IXBN42N170A.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 21A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Power dissipation: 313W
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
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DSEI2X30-10B DSEI2X30-10B IXYS DSEI2x30-10B_DSEI2x31-10B.pdf Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Max. forward voltage: 2V
Load current: 30A x2
Max. load current: 60A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Type of semiconductor module: diode
Semiconductor structure: double independent
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3+26.03 EUR
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IXTA1N170DHV IXTA1N170DHV IXYS IXTA(H)1N170DHV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Case: TO263HV
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 30ns
Drain current: 1A
On-state resistance: 16Ω
Power dissipation: 290W
Drain-source voltage: 1.7kV
Kind of channel: depletion
Type of transistor: N-MOSFET
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IXTH1N170DHV IXTH1N170DHV IXYS IXTA(H)1N170DHV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Case: TO247HV
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 30ns
Drain current: 1A
On-state resistance: 16Ω
Power dissipation: 290W
Drain-source voltage: 1.7kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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MMIX1G320N60B3 IXYS MMIX1G320N60B3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Technology: BiMOSFET™; GenX3™; PT
Mounting: SMD
Case: SMPD
Kind of package: tube
Turn-on time: 107ns
Gate charge: 585nC
Turn-off time: 595ns
Gate-emitter voltage: ±20V
Collector current: 180A
Collector-emitter voltage: 600V
Pulsed collector current: 1kA
Power dissipation: 1kW
Type of transistor: IGBT
Produkt ist nicht verfügbar
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OMA160 OMA160 IXYS OMA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 250V AC; max. 250V DC
On-state resistance: 100Ω
Relay variant: 1-phase; current source
auf Bestellung 75 Stücke:
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CPC1560G CPC1560G IXYS CPC1560.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Turn-off time: 400µs
auf Bestellung 146 Stücke:
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CPC1560GS CPC1560GS IXYS CPC1560.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Turn-off time: 400µs
Produkt ist nicht verfügbar
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CPC1560GSTR IXYS CPC1560.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Turn-off time: 400µs
Produkt ist nicht verfügbar
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DCG17P1200HR DCG17P1200HR.pdf
DCG17P1200HR
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18A; ISO247™; tube
Type of diode: Schottky rectifying
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: double series
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 2.2V
Max. forward impulse current: 1kA
Kind of package: tube
Technology: SiC
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Anzahl Preis
1+117.77 EUR
3+107.82 EUR
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DPG60C200HB Littelfuse-Power-Semiconductors-DPG60C200HB-Datasheet?assetguid=87B6D095-C8C9-4D2A-9030-B3214D70FAF8
DPG60C200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Reverse recovery time: 35ns
Power dissipation: 160W
auf Bestellung 268 Stücke:
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Anzahl Preis
11+6.52 EUR
13+5.86 EUR
14+5.18 EUR
30+4.75 EUR
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DHG40C1200HB DHG40C1200HB.pdf
DHG40C1200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20Ax2; tube; Ifsm: 150A; TO247-3; 140W
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 2.24V
Max. forward impulse current: 150A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Power dissipation: 140W
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12+6.15 EUR
13+5.63 EUR
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DMA50I1200HA
DMA50I1200HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-2
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Max. forward impulse current: 0.5kA
Kind of package: tube
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.13 EUR
17+4.45 EUR
30+3.95 EUR
120+3.35 EUR
Mindestbestellmenge: 14
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DHG20I1200HA DHG20I1200HA.pdf
DHG20I1200HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 150A; TO247-2; 140W
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 2.25V
Max. forward impulse current: 150A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Power dissipation: 140W
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.73 EUR
20+3.63 EUR
30+3.45 EUR
Mindestbestellmenge: 16
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DCG20C1200HR DCG20C1200HR.pdf
DCG20C1200HR
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 12.5Ax2; ISO247™; tube
Type of diode: Schottky rectifying
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 2.2V
Max. forward impulse current: 750A
Kind of package: tube
Technology: SiC
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.38 EUR
Mindestbestellmenge: 4
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DCG35C1200HR DCG35C1200HR.pdf
DCG35C1200HR
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18Ax2; ISO247™; tube
Type of diode: Schottky rectifying
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 2.2V
Max. forward impulse current: 1kA
Kind of package: tube
Technology: SiC
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+28.11 EUR
Mindestbestellmenge: 3
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DHG30I1200HA DHG30I1200HA.pdf
DHG30I1200HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 180W
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 1.95V
Max. forward impulse current: 200A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Power dissipation: 180W
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.66 EUR
14+5.42 EUR
16+4.7 EUR
20+4.08 EUR
Mindestbestellmenge: 13
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DPF60C200HJ DPF60C200HB.pdf
DPF60C200HJ
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™
Type of diode: rectifying
Case: ISOPLUS247™
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 0.88V
Max. forward impulse current: 560A
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Reverse recovery time: 35ns
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.32 EUR
19+3.89 EUR
21+3.45 EUR
30+3.27 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
DPG30C200HB Littelfuse-Power-Semiconductors-DPG30C200HB-Datasheet?assetguid=C7522524-F8A5-4F62-BC19-FCC564D51D7C
DPG30C200HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 1.25V
Max. forward impulse current: 0.24kA
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Reverse recovery time: 35ns
Power dissipation: 90W
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.26 EUR
23+3.25 EUR
Mindestbestellmenge: 17
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IXA12IF1200HB IXA12IF1200HB.pdf
IXA12IF1200HB
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: Planar; Sonic FRD™; XPT™
Type of transistor: IGBT
Gate charge: 27nC
Turn-on time: 110ns
Turn-off time: 350ns
Power dissipation: 85W
Collector current: 13A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 1.2kV
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.75 EUR
16+4.73 EUR
30+4.06 EUR
120+3.58 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXTP18P10T IXT_18P10T.pdf
IXTP18P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Case: TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Gate charge: 39nC
Reverse recovery time: 62ns
On-state resistance: 0.12Ω
Gate-source voltage: ±15V
Power dissipation: 83W
Kind of channel: enhancement
auf Bestellung 341 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.59 EUR
24+3.09 EUR
29+2.52 EUR
50+2 EUR
100+1.6 EUR
Mindestbestellmenge: 20
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MCO600-22io1 Littelfuse-Power-Semiconductors-MCO600-22io1-Datasheet?assetguid=513E57AB-C4CD-4D86-994B-0EA2FF79457F
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 600A; Y1; Ufmax: 1.34V
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2.2kV
Load current: 600A
Case: Y1
Max. forward voltage: 1.34V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MCO600-20io1 Littelfuse-Power-Semiconductors-MCO600-20io1-Datasheet?assetguid=053B5CC5-F625-4018-BAE3-C7C231E84F22
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2kV; 600A; Y1; Ufmax: 1.34V
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2kV
Load current: 600A
Case: Y1
Max. forward voltage: 1.34V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXFN100N50P description 99497.pdf
IXFN100N50P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 75A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 250A
Power dissipation: 1.04kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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LF21844NTR LF21844NTR.pdf
LF21844NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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CPC1973Y CPC1973.pdf
CPC1973Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 5ms
Max. operating current: 0.35mA
Turn-off time: 3ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 5Ω
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.91 EUR
10+9.58 EUR
25+8.71 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
CPC1302G CPC1302.pdf
CPC1302G
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V
Kind of output: Darlington
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Number of channels: 2
Collector-emitter voltage: 350V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.95 EUR
50+2.09 EUR
100+1.89 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
CPC1302GSTR CPC1302.pdf
CPC1302GSTR
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V
Collector-emitter voltage: 350V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-off time: 80µs
Turn-on time: 1µs
Trigger current: 50mA
Slew rate: 0.25V/μs
Number of channels: 2
Max. off-state voltage: 5V
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.4 EUR
29+2.49 EUR
Mindestbestellmenge: 22
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CLA60PD1200NA CLA60PD1200NA.pdf
CLA60PD1200NA
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: SOT227B
Max. forward voltage: 1.09V
Electrical mounting: screw
Max. load current: 94A
Mechanical mounting: screw
Max. forward impulse current: 935A
Kind of package: bulk
Gate current: 40/80mA
Threshold on-voltage: 0.79V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CLA100PD1200NA Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969
CLA100PD1200NA
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 100A
Case: SOT227B
Max. forward voltage: 1.21V
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Max. forward impulse current: 1.5kA
Kind of package: bulk
Gate current: 40/80mA
Threshold on-voltage: 0.83V
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+40.57 EUR
Mindestbestellmenge: 2
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CLA110MB1200NA CLA110MB1200NA.pdf
CLA110MB1200NA
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT227B
Max. forward voltage: 1.04V
Max. forward impulse current: 935A
Gate current: 40/80mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+26.28 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
MMO62-12IO6 MMo62-12io6-DTE.pdf
MMO62-12IO6
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 30A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 0.4kA
Gate current: 100mA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+30.97 EUR
Mindestbestellmenge: 3
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IXGN200N60B3 ixgn200n60b3.pdf
IXGN200N60B3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.2kA
Power dissipation: 830W
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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DSEI2X61-02A DSEI2x61-02A.pdf
DSEI2X61-02A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 71A x2
Case: SOT227B
Max. forward voltage: 0.88V
Electrical mounting: screw
Max. load current: 142A
Mechanical mounting: screw
Max. forward impulse current: 0.95kA
Kind of package: tube
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.22 EUR
10+29.6 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DSEP2X91-03A description DSEP2X91-03A-DTE.pdf
DSEP2X91-03A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 90A x2
Case: SOT227B
Max. forward voltage: 1.54V
Electrical mounting: screw
Max. load current: 180A
Mechanical mounting: screw
Technology: HiPerFRED™
Max. forward impulse current: 1kA
Kind of package: tube
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+41.54 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DSEP2X61-03A description DSEP2x61-03A.pdf
DSEP2X61-03A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.11V
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Technology: HiPerFRED™
Max. forward impulse current: 0.6kA
Kind of package: tube
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+33.79 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFB210N20P IXFB210N20P.pdf
IXFB210N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 10.5mΩ
Drain current: 210A
Power dissipation: 1.5kW
Drain-source voltage: 200V
Kind of package: tube
Produkt ist nicht verfügbar
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IXFB210N30P3 IXFB210N30P3.pdf
IXFB210N30P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 268nC
Reverse recovery time: 250ns
On-state resistance: 14.5mΩ
Drain current: 210A
Gate-source voltage: ±20V
Power dissipation: 1890W
Drain-source voltage: 300V
Kind of package: tube
Produkt ist nicht verfügbar
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DSEC120-12AK Littelfuse-Power-Semiconductors-DSEC120-12AK-Datasheet?assetguid=6d7c4a83-944f-41eb-8b81-8f646ced8d79
DSEC120-12AK
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Mounting: THT
Case: TO264
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 2.66V
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.2kV
Load current: 60A x2
Power dissipation: 330W
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.46 EUR
10+15.44 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFH26N50P3 IXFH26N50P3.pdf
IXFH26N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.08 EUR
10+7.51 EUR
11+6.68 EUR
30+6.31 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
PS2601 PS2601.pdf
PS2601
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXTP80N075L2 IXTA(H,P)80N075L2.pdf
IXTP80N075L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.11 EUR
11+6.88 EUR
12+6.19 EUR
50+6.09 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXTA80N075L2 IXTA(H,P)80N075L2.pdf
IXTA80N075L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.84 EUR
10+13.08 EUR
25+11.47 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXTH80N075L2 IXTA(H,P)80N075L2.pdf
IXTH80N075L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
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CLA80MT1200NHB CLA80MT1200NHB.pdf
CLA80MT1200NHB
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 440A
Type of thyristor: triac
Kind of package: tube
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
Case: TO247-3
Mounting: THT
auf Bestellung 273 Stücke:
Lieferzeit 14-21 Tag (e)
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8+9.4 EUR
10+8.24 EUR
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CLA60MT1200NHB CLA60MT1200NHB.pdf
CLA60MT1200NHB
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 325A
Type of thyristor: triac
Kind of package: tube
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
Case: TO247-3
Mounting: THT
auf Bestellung 19 Stücke:
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8+9.45 EUR
10+7.81 EUR
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CLA60MT1200NHR CLA60MT1200NHR.pdf
CLA60MT1200NHR
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 325A
Type of thyristor: triac
Kind of package: tube
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
Case: ISO247™
Mounting: THT
auf Bestellung 45 Stücke:
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Anzahl Preis
6+12.26 EUR
10+11.01 EUR
30+10.6 EUR
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IXFH230N10T IXFH230N10T.pdf
IXFH230N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.51 EUR
10+8.69 EUR
30+7.08 EUR
120+7.01 EUR
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IXFH320N10T2 IXFH(T)320N10T2.pdf
IXFH320N10T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
auf Bestellung 288 Stücke:
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5+14.37 EUR
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DSA50C100HB DSA50C100HB.pdf
DSA50C100HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.72V
Power dissipation: 160W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward voltage: 0.72V
Load current: 25A x2
auf Bestellung 95 Stücke:
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Anzahl Preis
16+4.52 EUR
18+4.08 EUR
20+3.6 EUR
30+3.29 EUR
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DSSK50-01A DSSK50-01A.pdf
DSSK50-01A
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; TO247-3; Ufmax: 0.65V
Power dissipation: 135W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward voltage: 0.65V
Load current: 25A x2
auf Bestellung 11 Stücke:
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11+6.51 EUR
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DSA30C100HB DSA30C100HB.pdf
DSA30C100HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO247-3; Ufmax: 0.72V
Power dissipation: 85W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.1kV
Max. forward impulse current: 340A
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward voltage: 0.72V
Load current: 15A x2
auf Bestellung 43 Stücke:
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Anzahl Preis
22+3.39 EUR
24+3.07 EUR
27+2.72 EUR
30+2.47 EUR
Mindestbestellmenge: 22
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MCB40P1200LB-TRR MCB40P1200LB.pdf
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCB40P1200LB-TUB MCB40P1200LB.pdf
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: double series
Produkt ist nicht verfügbar
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DSEP8-12A DSEP8-12A.pdf
DSEP8-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 40A; TO220AC; 60W; 40ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.96V
Max. forward impulse current: 40A
Kind of package: tube
Power dissipation: 60W
Technology: HiPerFRED™
auf Bestellung 174 Stücke:
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Anzahl Preis
24+3.06 EUR
33+2.23 EUR
50+1.57 EUR
100+1.53 EUR
Mindestbestellmenge: 24
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IX4426MTR IX4426-27-28.pdf
IX4426MTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
auf Bestellung 2000 Stücke:
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61+1.17 EUR
85+0.85 EUR
90+0.8 EUR
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IX4426NTR littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250
IX4426NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Produkt ist nicht verfügbar
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IX4426NE
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Case: SOIC8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: non-inverting
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 1.5A
Pulse fall time: 8ns
Impulse rise time: 10ns
Number of channels: 2
Supply voltage: 4.5...30V
Produkt ist nicht verfügbar
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IX4426NETR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Case: SOIC8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: non-inverting
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 1.5A
Pulse fall time: 8ns
Impulse rise time: 10ns
Number of channels: 2
Supply voltage: 4.5...30V
Produkt ist nicht verfügbar
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DSEP2X60-12A media?resourcetype=datasheets&itemid=c205d7ca-54ab-4175-bdd7-497f43ba7754&filename=Littelfuse-Power-Semiconductors-DSEP2x60-12A-Datasheet
DSEP2X60-12A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 60A x2
Semiconductor structure: double independent
Case: SOT227B
Max. forward voltage: 1.52V
Max. forward impulse current: 0.8kA
Kind of package: tube
Electrical mounting: screw
Type of semiconductor module: diode
Mechanical mounting: screw
Max. load current: 120A
auf Bestellung 10 Stücke:
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Anzahl Preis
2+53.17 EUR
3+50.42 EUR
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IXBN42N170A IXBN42N170A.pdf
IXBN42N170A
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 21A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Power dissipation: 313W
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+48.39 EUR
3+43.5 EUR
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DSEI2X30-10B DSEI2x30-10B_DSEI2x31-10B.pdf
DSEI2X30-10B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 30Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Max. forward voltage: 2V
Load current: 30A x2
Max. load current: 60A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Type of semiconductor module: diode
Semiconductor structure: double independent
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+26.03 EUR
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IXTA1N170DHV IXTA(H)1N170DHV.pdf
IXTA1N170DHV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Case: TO263HV
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 30ns
Drain current: 1A
On-state resistance: 16Ω
Power dissipation: 290W
Drain-source voltage: 1.7kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IXTH1N170DHV IXTA(H)1N170DHV.pdf
IXTH1N170DHV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Case: TO247HV
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 30ns
Drain current: 1A
On-state resistance: 16Ω
Power dissipation: 290W
Drain-source voltage: 1.7kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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MMIX1G320N60B3 MMIX1G320N60B3.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Technology: BiMOSFET™; GenX3™; PT
Mounting: SMD
Case: SMPD
Kind of package: tube
Turn-on time: 107ns
Gate charge: 585nC
Turn-off time: 595ns
Gate-emitter voltage: ±20V
Collector current: 180A
Collector-emitter voltage: 600V
Pulsed collector current: 1kA
Power dissipation: 1kW
Type of transistor: IGBT
Produkt ist nicht verfügbar
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OMA160 OMA160.pdf
OMA160
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 250V AC; max. 250V DC
On-state resistance: 100Ω
Relay variant: 1-phase; current source
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.52 EUR
10+7.81 EUR
25+6.79 EUR
Mindestbestellmenge: 8
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CPC1560G CPC1560.pdf
CPC1560G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Turn-off time: 400µs
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.21 EUR
16+4.58 EUR
Mindestbestellmenge: 14
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CPC1560GS CPC1560.pdf
CPC1560GS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Turn-off time: 400µs
Produkt ist nicht verfügbar
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CPC1560GSTR CPC1560.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 0.1ms
Turn-off time: 400µs
Produkt ist nicht verfügbar
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