| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| IXTT75N10L2 | IXYS |
IXTT75N10L2 SMD N channel transistors |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTT82N25P | IXYS |
IXTT82N25P SMD N channel transistors |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTT8P50 | IXYS |
IXTT8P50 SMD P channel transistors |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTU4N70X2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Pulsed drain current: 8A Power dissipation: 80W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 11.8nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 68 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTU8N70X2 | IXYS |
IXTU8N70X2 THT N channel transistors |
auf Bestellung 66 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTX120P20T | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W Kind of channel: enhancement Type of transistor: P-MOSFET Case: PLUS247™ Mounting: THT Technology: TrenchP™ Kind of package: tube Polarisation: unipolar Drain-source voltage: -200V Drain current: -120A Gate charge: 740nC Reverse recovery time: 300ns On-state resistance: 30mΩ Gate-source voltage: ±15V Power dissipation: 1.04kW Anzahl je Verpackung: 1 Stücke |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTX210P10T | IXYS | IXTX210P10T THT P channel transistors |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTX8N150L | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Type of transistor: N-MOSFET Case: PLUS247™ Kind of package: tube Mounting: THT Polarisation: unipolar Gate charge: 250nC Reverse recovery time: 1.7µs On-state resistance: 3.6Ω Power dissipation: 700W Drain current: 8A Drain-source voltage: 1.5kV Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTX90P20P | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns Case: PLUS247™ Type of transistor: P-MOSFET Mounting: THT Technology: PolarP™ Kind of package: tube Drain-source voltage: -200V Drain current: -90A Reverse recovery time: 315ns Gate charge: 205nC On-state resistance: 44mΩ Power dissipation: 890W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 138 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTY01N100 | IXYS |
IXTY01N100 SMD N channel transistors |
auf Bestellung 350 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTY08N100D2 | IXYS |
IXTY08N100D2 SMD N channel transistors |
auf Bestellung 207 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTY14N60X2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Pulsed drain current: 18A Power dissipation: 180W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 16.7nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 350 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTY18P10T | IXYS |
IXTY18P10T SMD P channel transistors |
auf Bestellung 78 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTY1N120P | IXYS |
IXTY1N120P SMD N channel transistors |
auf Bestellung 74 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTY1R6N100D2 | IXYS |
IXTY1R6N100D2 SMD N channel transistors |
auf Bestellung 372 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTY1R6N50D2 | IXYS |
IXTY1R6N50D2 SMD N channel transistors |
auf Bestellung 348 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTY3N50P | IXYS |
IXTY3N50P SMD N channel transistors |
auf Bestellung 32 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTY44N10T | IXYS |
IXTY44N10T SMD N channel transistors |
auf Bestellung 285 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTY4N65X2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Power dissipation: 80W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 8.3nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 160ns Technology: X2-Class Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTY8N65X2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 150W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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IXXH110N65C4 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 880W Case: TO247-3 Mounting: THT Kind of package: tube Collector current: 110A Gate-emitter voltage: ±20V Pulsed collector current: 600A Collector-emitter voltage: 650V Turn-off time: 160ns Gate charge: 167nC Turn-on time: 71ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 226 Stücke: Lieferzeit 7-14 Tag (e) |
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IXXH150N60C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 1.36kW Case: TO247-3 Mounting: THT Gate charge: 200nC Kind of package: tube Turn-on time: 0.1µs Turn-off time: 230ns Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 700A Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 294 Stücke: Lieferzeit 7-14 Tag (e) |
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IXXH30N60B3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 270W Case: TO247AD Mounting: THT Gate charge: 39nC Kind of package: tube Turn-on time: 23ns Turn-off time: 125ns Collector current: 30A Gate-emitter voltage: ±20V Pulsed collector current: 115A Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 233 Stücke: Lieferzeit 7-14 Tag (e) |
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IXXH30N60B3D1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD Type of transistor: IGBT Power dissipation: 270W Case: TO247AD Mounting: THT Gate charge: 39nC Kind of package: tube Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Technology: GenX3™; Planar; XPT™ Turn-on time: 23ns Turn-off time: 125ns Collector current: 30A Pulsed collector current: 115A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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IXXH40N65B4 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 67ns Turn-off time: 252ns Technology: GenX4™; Trench; XPT™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 34 Stücke: Lieferzeit 7-14 Tag (e) |
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IXXH60N65B4 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 265A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 94ns Turn-off time: 208ns Technology: GenX4™; Trench; XPT™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 181 Stücke: Lieferzeit 7-14 Tag (e) |
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IXXH60N65B4H1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 265A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 94ns Turn-off time: 208ns Technology: GenX4™; Trench; XPT™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 289 Stücke: Lieferzeit 7-14 Tag (e) |
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IXXH80N65B4 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 625W Case: TO247-3 Mounting: THT Gate charge: 0.12µC Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 125ns Turn-off time: 222ns Gate-emitter voltage: ±20V Collector current: 80A Pulsed collector current: 430A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 255 Stücke: Lieferzeit 7-14 Tag (e) |
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IXXK110N65B4H1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 880W Case: TO264 Mounting: THT Kind of package: tube Collector current: 110A Gate-emitter voltage: ±20V Pulsed collector current: 570A Collector-emitter voltage: 650V Turn-off time: 250ns Gate charge: 183nC Turn-on time: 65ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 11 Stücke: Lieferzeit 7-14 Tag (e) |
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IXXK160N65B4 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 940W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 860A Mounting: THT Gate charge: 425nC Kind of package: tube Turn-on time: 93ns Turn-off time: 380ns Technology: GenX4™; Trench; XPT™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 293 Stücke: Lieferzeit 7-14 Tag (e) |
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IXYA15N65C3D1 | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 200W Case: TO263 Mounting: SMD Gate charge: 19nC Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 36ns Turn-off time: 102ns Collector current: 15A Gate-emitter voltage: ±20V Pulsed collector current: 80A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 207 Stücke: Lieferzeit 7-14 Tag (e) |
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IXYA20N65C3D1 | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 200W Case: TO263 Mounting: SMD Kind of package: tube Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 105A Collector-emitter voltage: 650V Turn-on time: 51ns Gate charge: 30nC Turn-off time: 132ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 141 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXyH100N65C3 | IXYS |
IXYH100N65C3 THT IGBT transistors |
auf Bestellung 282 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYH20N120C3D1 | IXYS |
IXYH20N120C3D1 THT IGBT transistors |
auf Bestellung 243 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYH40N90C3D1 | IXYS |
IXYH40N90C3D1 THT IGBT transistors |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYH50N120C3D1 | IXYS |
IXYH50N120C3D1 THT IGBT transistors |
auf Bestellung 91 Stücke: Lieferzeit 7-14 Tag (e) |
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IXYH50N65C3H1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 80nC Kind of package: tube Turn-on time: 56ns Turn-off time: 142ns Technology: GenX3™; Planar; XPT™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 136 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYH60N90C3 | IXYS |
IXYH60N90C3 THT IGBT transistors |
auf Bestellung 284 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYH8N250CHV | IXYS |
IXYH8N250CHV THT IGBT transistors |
auf Bestellung 51 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYK120N120C3 | IXYS |
IXYK120N120C3 THT IGBT transistors |
auf Bestellung 33 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYN100N120C3H1 | IXYS |
IXYN100N120C3H1 IGBT modules |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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IXYP20N65C3D1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 200W Case: TO220-3 Mounting: THT Kind of package: tube Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 105A Collector-emitter voltage: 650V Turn-on time: 51ns Gate charge: 30nC Turn-off time: 132ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 228 Stücke: Lieferzeit 7-14 Tag (e) |
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IXYP8N90C3D1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3 Collector-emitter voltage: 900V Technology: GenX3™; Planar; XPT™ Type of transistor: IGBT Mounting: THT Case: TO220-3 Kind of package: tube Gate charge: 13.3nC Turn-on time: 39ns Turn-off time: 238ns Collector current: 8A Gate-emitter voltage: ±20V Pulsed collector current: 48A Power dissipation: 125W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 126 Stücke: Lieferzeit 7-14 Tag (e) |
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IXYX120N120B3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™ Kind of package: tube Technology: GenX3™; Planar; XPT™ Type of transistor: IGBT Mounting: THT Turn-on time: 84ns Turn-off time: 826ns Gate charge: 400nC Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 800A Power dissipation: 1.5kW Collector-emitter voltage: 1.2kV Case: PLUS247™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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IXYX120N120C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™ Kind of package: tube Technology: GenX3™; Planar; XPT™ Type of transistor: IGBT Mounting: THT Turn-on time: 105ns Turn-off time: 346ns Gate charge: 412nC Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 700A Power dissipation: 1.5kW Collector-emitter voltage: 1.2kV Case: PLUS247™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYY8N90C3 | IXYS |
IXYY8N90C3 SMD IGBT transistors |
auf Bestellung 306 Stücke: Lieferzeit 7-14 Tag (e) |
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| LAA100 | IXYS |
LAA100 One Phase Solid State Relays |
auf Bestellung 250 Stücke: Lieferzeit 7-14 Tag (e) |
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| LAA100L | IXYS |
LAA100L One Phase Solid State Relays |
auf Bestellung 250 Stücke: Lieferzeit 7-14 Tag (e) |
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| LAA100P | IXYS |
LAA100P One Phase Solid State Relays |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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| LAA100S | IXYS |
LAA100S One Phase Solid State Relays |
auf Bestellung 87 Stücke: Lieferzeit 7-14 Tag (e) |
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| LAA108 | IXYS |
LAA108 One Phase Solid State Relays |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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| LAA110 | IXYS |
LAA110 One Phase Solid State Relays |
auf Bestellung 276 Stücke: Lieferzeit 7-14 Tag (e) |
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| LAA110PL | IXYS |
LAA110PL One Phase Solid State Relays |
auf Bestellung 295 Stücke: Lieferzeit 7-14 Tag (e) |
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| LAA110S | IXYS |
LAA110S One Phase Solid State Relays |
auf Bestellung 160 Stücke: Lieferzeit 7-14 Tag (e) |
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| LAA120 | IXYS |
LAA120 One Phase Solid State Relays |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| LAA120L | IXYS |
LAA120L One Phase Solid State Relays |
auf Bestellung 88 Stücke: Lieferzeit 7-14 Tag (e) |
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| LAA120LS | IXYS |
LAA120LS One Phase Solid State Relays |
auf Bestellung 98 Stücke: Lieferzeit 7-14 Tag (e) |
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| LAA120PL | IXYS |
LAA120PL One Phase Solid State Relays |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| LAA120S | IXYS |
LAA120S One Phase Solid State Relays |
auf Bestellung 97 Stücke: Lieferzeit 7-14 Tag (e) |
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| LAA125L | IXYS |
LAA125L One Phase Solid State Relays |
auf Bestellung 95 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTT75N10L2 |
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Hersteller: IXYS
IXTT75N10L2 SMD N channel transistors
IXTT75N10L2 SMD N channel transistors
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 2+ | 35.75 EUR |
| 4+ | 17.88 EUR |
| 30+ | 13.73 EUR |
| IXTT82N25P |
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Hersteller: IXYS
IXTT82N25P SMD N channel transistors
IXTT82N25P SMD N channel transistors
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 11.91 EUR |
| IXTT8P50 |
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Hersteller: IXYS
IXTT8P50 SMD P channel transistors
IXTT8P50 SMD P channel transistors
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.35 EUR |
| 9+ | 8.11 EUR |
| IXTU4N70X2 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.66 EUR |
| 30+ | 2.4 EUR |
| 34+ | 2.12 EUR |
| 70+ | 1.92 EUR |
| IXTU8N70X2 |
![]() |
Hersteller: IXYS
IXTU8N70X2 THT N channel transistors
IXTU8N70X2 THT N channel transistors
auf Bestellung 66 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.16 EUR |
| 29+ | 2.55 EUR |
| 30+ | 2.4 EUR |
| 560+ | 2.32 EUR |
| IXTX120P20T |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PLUS247™
Mounting: THT
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Gate charge: 740nC
Reverse recovery time: 300ns
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PLUS247™
Mounting: THT
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Gate charge: 740nC
Reverse recovery time: 300ns
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 28.6 EUR |
| 10+ | 26.93 EUR |
| IXTX210P10T |
Hersteller: IXYS
IXTX210P10T THT P channel transistors
IXTX210P10T THT P channel transistors
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 36.31 EUR |
| 3+ | 30.62 EUR |
| 30+ | 29.44 EUR |
| IXTX8N150L |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
Drain current: 8A
Drain-source voltage: 1.5kV
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
Drain current: 8A
Drain-source voltage: 1.5kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 40.9 EUR |
| IXTX90P20P |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Case: PLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -90A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 44mΩ
Power dissipation: 890W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Case: PLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -90A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 44mΩ
Power dissipation: 890W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 138 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 17.42 EUR |
| IXTY01N100 |
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Hersteller: IXYS
IXTY01N100 SMD N channel transistors
IXTY01N100 SMD N channel transistors
auf Bestellung 350 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.65 EUR |
| 36+ | 2 EUR |
| 38+ | 1.89 EUR |
| IXTY08N100D2 |
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Hersteller: IXYS
IXTY08N100D2 SMD N channel transistors
IXTY08N100D2 SMD N channel transistors
auf Bestellung 207 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.65 EUR |
| 24+ | 3.07 EUR |
| 25+ | 2.92 EUR |
| IXTY14N60X2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 350 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.51 EUR |
| 17+ | 4.25 EUR |
| 25+ | 3.73 EUR |
| 70+ | 3.66 EUR |
| IXTY18P10T |
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Hersteller: IXYS
IXTY18P10T SMD P channel transistors
IXTY18P10T SMD P channel transistors
auf Bestellung 78 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.71 EUR |
| 23+ | 3.12 EUR |
| 25+ | 2.96 EUR |
| IXTY1N120P |
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Hersteller: IXYS
IXTY1N120P SMD N channel transistors
IXTY1N120P SMD N channel transistors
auf Bestellung 74 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.95 EUR |
| 30+ | 2.46 EUR |
| 31+ | 2.32 EUR |
| 70+ | 2.23 EUR |
| IXTY1R6N100D2 |
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Hersteller: IXYS
IXTY1R6N100D2 SMD N channel transistors
IXTY1R6N100D2 SMD N channel transistors
auf Bestellung 372 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.21 EUR |
| 25+ | 2.86 EUR |
| 27+ | 2.7 EUR |
| IXTY1R6N50D2 |
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Hersteller: IXYS
IXTY1R6N50D2 SMD N channel transistors
IXTY1R6N50D2 SMD N channel transistors
auf Bestellung 348 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.58 EUR |
| 25+ | 2.86 EUR |
| 27+ | 2.7 EUR |
| 50+ | 2.63 EUR |
| IXTY3N50P |
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Hersteller: IXYS
IXTY3N50P SMD N channel transistors
IXTY3N50P SMD N channel transistors
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.23 EUR |
| 35+ | 2.04 EUR |
| 95+ | 0.76 EUR |
| IXTY44N10T |
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Hersteller: IXYS
IXTY44N10T SMD N channel transistors
IXTY44N10T SMD N channel transistors
auf Bestellung 285 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.29 EUR |
| 40+ | 1.8 EUR |
| 43+ | 1.7 EUR |
| 140+ | 1.63 EUR |
| IXTY4N65X2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Technology: X2-Class
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Technology: X2-Class
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 11.91 EUR |
| 10+ | 7.15 EUR |
| 25+ | 2.86 EUR |
| 70+ | 1.69 EUR |
| IXTY8N65X2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.9 EUR |
| 24+ | 3.02 EUR |
| 27+ | 2.65 EUR |
| 70+ | 1.93 EUR |
| 140+ | 1.79 EUR |
| 560+ | 1.73 EUR |
| IXXH110N65C4 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Collector-emitter voltage: 650V
Turn-off time: 160ns
Gate charge: 167nC
Turn-on time: 71ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Collector-emitter voltage: 650V
Turn-off time: 160ns
Gate charge: 167nC
Turn-on time: 71ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 226 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.84 EUR |
| 6+ | 12.43 EUR |
| 10+ | 10.88 EUR |
| 30+ | 10.1 EUR |
| IXXH150N60C3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 700A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 700A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 294 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 15.32 EUR |
| 10+ | 13.38 EUR |
| 30+ | 12.04 EUR |
| IXXH30N60B3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
Collector current: 30A
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
Collector current: 30A
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 233 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.35 EUR |
| 11+ | 6.62 EUR |
| 13+ | 5.85 EUR |
| 30+ | 5.25 EUR |
| IXXH30N60B3D1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 23ns
Turn-off time: 125ns
Collector current: 30A
Pulsed collector current: 115A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 23ns
Turn-off time: 125ns
Collector current: 30A
Pulsed collector current: 115A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.54 EUR |
| 11+ | 6.94 EUR |
| IXXH40N65B4 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Technology: GenX4™; Trench; XPT™
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Technology: GenX4™; Trench; XPT™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.89 EUR |
| 12+ | 6.21 EUR |
| 14+ | 5.48 EUR |
| 30+ | 4.93 EUR |
| IXXH60N65B4 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
Technology: GenX4™; Trench; XPT™
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
Technology: GenX4™; Trench; XPT™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 181 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.91 EUR |
| 11+ | 7.01 EUR |
| 12+ | 6.49 EUR |
| 13+ | 5.95 EUR |
| IXXH60N65B4H1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
Technology: GenX4™; Trench; XPT™
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
Technology: GenX4™; Trench; XPT™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 289 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 12.7 EUR |
| 30+ | 11.2 EUR |
| IXXH80N65B4 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 125ns
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 125ns
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 255 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.65 EUR |
| 10+ | 7.86 EUR |
| 30+ | 6.08 EUR |
| 120+ | 5.81 EUR |
| IXXK110N65B4H1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: TO264
Mounting: THT
Kind of package: tube
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: TO264
Mounting: THT
Kind of package: tube
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 24.22 EUR |
| 5+ | 23.08 EUR |
| 10+ | 20.82 EUR |
| 25+ | 18.38 EUR |
| IXXK160N65B4 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
Technology: GenX4™; Trench; XPT™
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
Technology: GenX4™; Trench; XPT™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 293 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 22.27 EUR |
| 10+ | 21.91 EUR |
| IXYA15N65C3D1 |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO263
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 36ns
Turn-off time: 102ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO263
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 36ns
Turn-off time: 102ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 207 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.19 EUR |
| 25+ | 2.89 EUR |
| 29+ | 2.53 EUR |
| 50+ | 2.29 EUR |
| IXYA20N65C3D1 |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 141 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.06 EUR |
| 20+ | 3.65 EUR |
| 23+ | 3.23 EUR |
| 50+ | 2.9 EUR |
| IXyH100N65C3 |
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Hersteller: IXYS
IXYH100N65C3 THT IGBT transistors
IXYH100N65C3 THT IGBT transistors
auf Bestellung 282 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 16.27 EUR |
| 7+ | 11.01 EUR |
| 60+ | 10.98 EUR |
| IXYH20N120C3D1 |
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Hersteller: IXYS
IXYH20N120C3D1 THT IGBT transistors
IXYH20N120C3D1 THT IGBT transistors
auf Bestellung 243 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.72 EUR |
| 8+ | 10.14 EUR |
| 10+ | 9.84 EUR |
| IXYH40N90C3D1 |
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Hersteller: IXYS
IXYH40N90C3D1 THT IGBT transistors
IXYH40N90C3D1 THT IGBT transistors
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 13.84 EUR |
| 8+ | 9.14 EUR |
| IXYH50N120C3D1 |
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Hersteller: IXYS
IXYH50N120C3D1 THT IGBT transistors
IXYH50N120C3D1 THT IGBT transistors
auf Bestellung 91 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 12.21 EUR |
| IXYH50N65C3H1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 142ns
Technology: GenX3™; Planar; XPT™
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 142ns
Technology: GenX3™; Planar; XPT™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 136 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 12.43 EUR |
| 10+ | 10.27 EUR |
| 30+ | 8.51 EUR |
| IXYH60N90C3 |
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Hersteller: IXYS
IXYH60N90C3 THT IGBT transistors
IXYH60N90C3 THT IGBT transistors
auf Bestellung 284 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 12.9 EUR |
| 9+ | 8.17 EUR |
| IXYH8N250CHV |
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Hersteller: IXYS
IXYH8N250CHV THT IGBT transistors
IXYH8N250CHV THT IGBT transistors
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.98 EUR |
| IXYK120N120C3 |
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Hersteller: IXYS
IXYK120N120C3 THT IGBT transistors
IXYK120N120C3 THT IGBT transistors
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 38.54 EUR |
| 3+ | 31.65 EUR |
| 25+ | 30.74 EUR |
| IXYN100N120C3H1 |
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Hersteller: IXYS
IXYN100N120C3H1 IGBT modules
IXYN100N120C3H1 IGBT modules
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 87.09 EUR |
| 2+ | 55.97 EUR |
| IXYP20N65C3D1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 228 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 5.08 EUR |
| 21+ | 3.43 EUR |
| 50+ | 2.69 EUR |
| 100+ | 2.46 EUR |
| IXYP8N90C3D1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 126 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.52 EUR |
| 18+ | 4.06 EUR |
| 20+ | 3.59 EUR |
| 50+ | 3.23 EUR |
| IXYX120N120B3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Turn-on time: 84ns
Turn-off time: 826ns
Gate charge: 400nC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 800A
Power dissipation: 1.5kW
Collector-emitter voltage: 1.2kV
Case: PLUS247™
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Turn-on time: 84ns
Turn-off time: 826ns
Gate charge: 400nC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 800A
Power dissipation: 1.5kW
Collector-emitter voltage: 1.2kV
Case: PLUS247™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 40.27 EUR |
| 3+ | 36.26 EUR |
| 10+ | 32.03 EUR |
| 30+ | 29.7 EUR |
| IXYX120N120C3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Turn-on time: 105ns
Turn-off time: 346ns
Gate charge: 412nC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 700A
Power dissipation: 1.5kW
Collector-emitter voltage: 1.2kV
Case: PLUS247™
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Turn-on time: 105ns
Turn-off time: 346ns
Gate charge: 412nC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 700A
Power dissipation: 1.5kW
Collector-emitter voltage: 1.2kV
Case: PLUS247™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 38.91 EUR |
| 3+ | 36.57 EUR |
| 30+ | 32.76 EUR |
| IXYY8N90C3 |
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Hersteller: IXYS
IXYY8N90C3 SMD IGBT transistors
IXYY8N90C3 SMD IGBT transistors
auf Bestellung 306 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.96 EUR |
| 30+ | 2.43 EUR |
| 32+ | 2.3 EUR |
| 560+ | 2.27 EUR |
| LAA100 |
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Hersteller: IXYS
LAA100 One Phase Solid State Relays
LAA100 One Phase Solid State Relays
auf Bestellung 250 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.13 EUR |
| 16+ | 4.68 EUR |
| 17+ | 4.42 EUR |
| 250+ | 4.33 EUR |
| LAA100L |
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Hersteller: IXYS
LAA100L One Phase Solid State Relays
LAA100L One Phase Solid State Relays
auf Bestellung 250 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 5 EUR |
| 16+ | 4.48 EUR |
| 100+ | 4.3 EUR |
| LAA100P |
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Hersteller: IXYS
LAA100P One Phase Solid State Relays
LAA100P One Phase Solid State Relays
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 11.91 EUR |
| 10+ | 7.15 EUR |
| 250+ | 4.3 EUR |
| LAA100S |
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Hersteller: IXYS
LAA100S One Phase Solid State Relays
LAA100S One Phase Solid State Relays
auf Bestellung 87 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.22 EUR |
| 16+ | 4.68 EUR |
| 17+ | 4.42 EUR |
| 250+ | 4.32 EUR |
| LAA108 |
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Hersteller: IXYS
LAA108 One Phase Solid State Relays
LAA108 One Phase Solid State Relays
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.25 EUR |
| 2500+ | 2.27 EUR |
| LAA110 |
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Hersteller: IXYS
LAA110 One Phase Solid State Relays
LAA110 One Phase Solid State Relays
auf Bestellung 276 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.45 EUR |
| 17+ | 4.39 EUR |
| 18+ | 4.15 EUR |
| LAA110PL |
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Hersteller: IXYS
LAA110PL One Phase Solid State Relays
LAA110PL One Phase Solid State Relays
auf Bestellung 295 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 5.06 EUR |
| 16+ | 4.5 EUR |
| 17+ | 4.26 EUR |
| 1000+ | 4.1 EUR |
| LAA110S |
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Hersteller: IXYS
LAA110S One Phase Solid State Relays
LAA110S One Phase Solid State Relays
auf Bestellung 160 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.32 EUR |
| 17+ | 4.39 EUR |
| 18+ | 4.15 EUR |
| LAA120 |
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Hersteller: IXYS
LAA120 One Phase Solid State Relays
LAA120 One Phase Solid State Relays
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.22 EUR |
| 17+ | 4.3 EUR |
| 18+ | 4.06 EUR |
| 1000+ | 3.92 EUR |
| LAA120L |
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Hersteller: IXYS
LAA120L One Phase Solid State Relays
LAA120L One Phase Solid State Relays
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.22 EUR |
| 16+ | 4.68 EUR |
| 17+ | 4.42 EUR |
| 100+ | 4.32 EUR |
| LAA120LS |
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Hersteller: IXYS
LAA120LS One Phase Solid State Relays
LAA120LS One Phase Solid State Relays
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.22 EUR |
| 16+ | 4.68 EUR |
| 17+ | 4.42 EUR |
| 100+ | 4.32 EUR |
| LAA120PL |
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Hersteller: IXYS
LAA120PL One Phase Solid State Relays
LAA120PL One Phase Solid State Relays
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.22 EUR |
| 16+ | 4.68 EUR |
| 17+ | 4.42 EUR |
| 100+ | 4.32 EUR |
| LAA120S |
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Hersteller: IXYS
LAA120S One Phase Solid State Relays
LAA120S One Phase Solid State Relays
auf Bestellung 97 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.61 EUR |
| 17+ | 4.3 EUR |
| 18+ | 4.06 EUR |
| 1000+ | 3.92 EUR |
| LAA125L |
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Hersteller: IXYS
LAA125L One Phase Solid State Relays
LAA125L One Phase Solid State Relays
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.75 EUR |
| 16+ | 4.68 EUR |
| 17+ | 4.42 EUR |
| 1000+ | 4.25 EUR |









