| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| IXTP6N50D2 | IXYS |
IXTP6N50D2 THT N channel transistors |
auf Bestellung 154 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP76P10T | IXYS |
IXTP76P10T THT P channel transistors |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP80N075L2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 357W Case: TO220AB On-state resistance: 24mΩ Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 160ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 166 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP80N10T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 230W Case: TO220AB On-state resistance: 14mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 72 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP8N70X2 | IXYS |
IXTP8N70X2 THT N channel transistors |
auf Bestellung 224 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP8N70X2M | IXYS |
IXTP8N70X2M THT N channel transistors |
auf Bestellung 298 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP90N055T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns Case: TO220AB Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Drain-source voltage: 55V Drain current: 90A Reverse recovery time: 37ns Gate charge: 42nC On-state resistance: 8.4mΩ Power dissipation: 150W Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 290 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP96P085T | IXYS |
IXTP96P085T THT P channel transistors |
auf Bestellung 134 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTQ10P50P | IXYS |
IXTQ10P50P THT P channel transistors |
auf Bestellung 420 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ120N20P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO3P Technology: PolarHT™ Mounting: THT Kind of package: tube Polarisation: unipolar Drain-source voltage: 200V Drain current: 120A Gate charge: 152nC Reverse recovery time: 180ns On-state resistance: 22mΩ Gate-source voltage: ±20V Power dissipation: 714W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTQ130N20T | IXYS |
IXTQ130N20T THT N channel transistors |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ150N15P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO3P Technology: PolarHT™ Kind of package: tube Mounting: THT Polarisation: unipolar Gate charge: 0.19µC Reverse recovery time: 150ns On-state resistance: 13mΩ Power dissipation: 714W Drain current: 150A Gate-source voltage: ±20V Drain-source voltage: 150V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTQ170N10P | IXYS |
IXTQ170N10P THT N channel transistors |
auf Bestellung 297 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTQ200N10T | IXYS |
IXTQ200N10T THT N channel transistors |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ22N50P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Power dissipation: 350W Case: TO3P On-state resistance: 0.27Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 400ns Features of semiconductor devices: standard power mosfet Anzahl je Verpackung: 1 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTQ26N50P | IXYS |
IXTQ26N50P THT N channel transistors |
auf Bestellung 210 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTQ26P20P | IXYS |
IXTQ26P20P THT P channel transistors |
auf Bestellung 294 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ34N65X2M | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 40W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 96mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTQ36N50P | IXYS |
IXTQ36N50P THT N channel transistors |
auf Bestellung 268 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ460P2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P Type of transistor: N-MOSFET Technology: Polar2™ Case: TO3P Kind of package: tube Polarisation: unipolar Gate charge: 48nC Reverse recovery time: 400ns On-state resistance: 0.27Ω Drain current: 24A Gate-source voltage: ±30V Drain-source voltage: 500V Power dissipation: 480W Kind of channel: enhancement Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 118 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTQ48N65X2M | IXYS | IXTQ48N65X2M THT N channel transistors |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ50N20P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO3P Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 217 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTQ52P10P | IXYS |
IXTQ52P10P THT P channel transistors |
auf Bestellung 123 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ60N20T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns Type of transistor: N-MOSFET Features of semiconductor devices: thrench gate power mosfet Case: TO3P Kind of package: tube Polarisation: unipolar Gate charge: 73nC Reverse recovery time: 118ns On-state resistance: 40mΩ Drain current: 60A Drain-source voltage: 200V Power dissipation: 500W Kind of channel: enhancement Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 218 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTQ76N25T | IXYS |
IXTQ76N25T THT N channel transistors |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTQ82N25P | IXYS |
IXTQ82N25P THT N channel transistors |
auf Bestellung 298 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTQ88N30P | IXYS |
IXTQ88N30P THT N channel transistors |
auf Bestellung 264 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTR20P50P | IXYS |
IXTR20P50P THT P channel transistors |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTR210P10T | IXYS |
IXTR210P10T THT P channel transistors |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTR36P15P | IXYS |
IXTR36P15P THT P channel transistors |
auf Bestellung 52 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTR40P50P | IXYS |
IXTR40P50P THT P channel transistors |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTR48P20P | IXYS |
IXTR48P20P THT P channel transistors |
auf Bestellung 58 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTR90P20P | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns Case: ISOPLUS247™ Type of transistor: P-MOSFET Mounting: THT Technology: PolarP™ Kind of package: tube Drain-source voltage: -200V Drain current: -53A Reverse recovery time: 315ns Gate charge: 205nC On-state resistance: 48mΩ Power dissipation: 312W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTT02N450HV | IXYS |
IXTT02N450HV SMD N channel transistors |
auf Bestellung 147 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTT16P60P | IXYS |
IXTT16P60P SMD P channel transistors |
auf Bestellung 124 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTT170N10P | IXYS |
IXTT170N10P SMD N channel transistors |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTT24P20 | IXYS |
IXTT24P20 SMD P channel transistors |
auf Bestellung 183 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTT50P10 | IXYS |
IXTT50P10 SMD P channel transistors |
auf Bestellung 17 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTT68P20T | IXYS |
IXTT68P20T SMD P channel transistors |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTT75N10L2 | IXYS |
IXTT75N10L2 SMD N channel transistors |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTT88N30P | IXYS |
IXTT88N30P SMD N channel transistors |
auf Bestellung 74 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTT8P50 | IXYS |
IXTT8P50 SMD P channel transistors |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTU4N70X2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Pulsed drain current: 8A Power dissipation: 80W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 11.8nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 68 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTU8N70X2 | IXYS |
IXTU8N70X2 THT N channel transistors |
auf Bestellung 66 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTX120P20T | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W Kind of channel: enhancement Type of transistor: P-MOSFET Case: PLUS247™ Mounting: THT Technology: TrenchP™ Kind of package: tube Polarisation: unipolar Drain-source voltage: -200V Drain current: -120A Gate charge: 740nC Reverse recovery time: 300ns On-state resistance: 30mΩ Gate-source voltage: ±15V Power dissipation: 1.04kW Anzahl je Verpackung: 1 Stücke |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTX210P10T | IXYS | IXTX210P10T THT P channel transistors |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTX8N150L | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Type of transistor: N-MOSFET Case: PLUS247™ Kind of package: tube Mounting: THT Polarisation: unipolar Gate charge: 250nC Reverse recovery time: 1.7µs On-state resistance: 3.6Ω Power dissipation: 700W Drain current: 8A Drain-source voltage: 1.5kV Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTX90P20P | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns Case: PLUS247™ Type of transistor: P-MOSFET Mounting: THT Technology: PolarP™ Kind of package: tube Drain-source voltage: -200V Drain current: -90A Reverse recovery time: 315ns Gate charge: 205nC On-state resistance: 44mΩ Power dissipation: 890W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 138 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTY01N100 | IXYS |
IXTY01N100 SMD N channel transistors |
auf Bestellung 346 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTY08N100D2 | IXYS |
IXTY08N100D2 SMD N channel transistors |
auf Bestellung 207 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTY14N60X2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Pulsed drain current: 18A Power dissipation: 180W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 16.7nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 350 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTY1N120P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO252 Mounting: SMD Features of semiconductor devices: standard power mosfet Kind of package: tube Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 1A Reverse recovery time: 900ns On-state resistance: 20Ω Power dissipation: 63W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 74 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTY1R6N100D2 | IXYS |
IXTY1R6N100D2 SMD N channel transistors |
auf Bestellung 370 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTY1R6N50D2 | IXYS |
IXTY1R6N50D2 SMD N channel transistors |
auf Bestellung 348 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTY3N50P | IXYS |
IXTY3N50P SMD N channel transistors |
auf Bestellung 32 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTY44N10T | IXYS |
IXTY44N10T SMD N channel transistors |
auf Bestellung 285 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTY4N65X2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Power dissipation: 80W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 8.3nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 160ns Technology: X2-Class Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTY8N65X2 | IXYS |
IXTY8N65X2 SMD N channel transistors |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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IXXH110N65C4 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 880W Case: TO247-3 Mounting: THT Kind of package: tube Collector current: 110A Gate-emitter voltage: ±20V Pulsed collector current: 600A Collector-emitter voltage: 650V Turn-off time: 160ns Gate charge: 167nC Turn-on time: 71ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 226 Stücke: Lieferzeit 7-14 Tag (e) |
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IXXH150N60C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 1.36kW Case: TO247-3 Mounting: THT Gate charge: 200nC Kind of package: tube Turn-on time: 0.1µs Turn-off time: 230ns Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 700A Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 294 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXTP6N50D2 |
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Hersteller: IXYS
IXTP6N50D2 THT N channel transistors
IXTP6N50D2 THT N channel transistors
auf Bestellung 154 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.81 EUR |
| 12+ | 5.96 EUR |
| IXTP76P10T |
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Hersteller: IXYS
IXTP76P10T THT P channel transistors
IXTP76P10T THT P channel transistors
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.71 EUR |
| 15+ | 5.02 EUR |
| 16+ | 4.75 EUR |
| 100+ | 4.63 EUR |
| IXTP80N075L2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 166 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.08 EUR |
| 11+ | 6.85 EUR |
| 12+ | 6.15 EUR |
| 50+ | 6.09 EUR |
| IXTP80N10T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 72 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.8 EUR |
| 24+ | 2.99 EUR |
| 50+ | 2.57 EUR |
| IXTP8N70X2 |
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Hersteller: IXYS
IXTP8N70X2 THT N channel transistors
IXTP8N70X2 THT N channel transistors
auf Bestellung 224 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.35 EUR |
| 26+ | 2.79 EUR |
| 28+ | 2.65 EUR |
| 500+ | 2.55 EUR |
| IXTP8N70X2M |
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Hersteller: IXYS
IXTP8N70X2M THT N channel transistors
IXTP8N70X2M THT N channel transistors
auf Bestellung 298 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.49 EUR |
| 28+ | 2.65 EUR |
| 29+ | 2.5 EUR |
| IXTP90N055T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Case: TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Drain-source voltage: 55V
Drain current: 90A
Reverse recovery time: 37ns
Gate charge: 42nC
On-state resistance: 8.4mΩ
Power dissipation: 150W
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Case: TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Drain-source voltage: 55V
Drain current: 90A
Reverse recovery time: 37ns
Gate charge: 42nC
On-state resistance: 8.4mΩ
Power dissipation: 150W
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 290 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.52 EUR |
| 34+ | 2.16 EUR |
| 50+ | 1.82 EUR |
| 100+ | 1.66 EUR |
| 200+ | 1.6 EUR |
| IXTP96P085T |
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Hersteller: IXYS
IXTP96P085T THT P channel transistors
IXTP96P085T THT P channel transistors
auf Bestellung 134 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.63 EUR |
| 15+ | 4.99 EUR |
| 16+ | 4.72 EUR |
| 50+ | 4.59 EUR |
| IXTQ10P50P |
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Hersteller: IXYS
IXTQ10P50P THT P channel transistors
IXTQ10P50P THT P channel transistors
auf Bestellung 420 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.91 EUR |
| 12+ | 5.98 EUR |
| 13+ | 5.65 EUR |
| 60+ | 5.51 EUR |
| IXTQ120N20P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Gate-source voltage: ±20V
Power dissipation: 714W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Gate-source voltage: ±20V
Power dissipation: 714W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 35.75 EUR |
| 30+ | 9.65 EUR |
| 120+ | 9.25 EUR |
| IXTQ130N20T |
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Hersteller: IXYS
IXTQ130N20T THT N channel transistors
IXTQ130N20T THT N channel transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 13.13 EUR |
| 8+ | 8.94 EUR |
| 9+ | 8.45 EUR |
| IXTQ150N15P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 0.19µC
Reverse recovery time: 150ns
On-state resistance: 13mΩ
Power dissipation: 714W
Drain current: 150A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 0.19µC
Reverse recovery time: 150ns
On-state resistance: 13mΩ
Power dissipation: 714W
Drain current: 150A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| IXTQ170N10P |
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Hersteller: IXYS
IXTQ170N10P THT N channel transistors
IXTQ170N10P THT N channel transistors
auf Bestellung 297 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.77 EUR |
| 8+ | 9.32 EUR |
| IXTQ200N10T |
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Hersteller: IXYS
IXTQ200N10T THT N channel transistors
IXTQ200N10T THT N channel transistors
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 3+ | 23.84 EUR |
| 8+ | 8.94 EUR |
| 120+ | 6.16 EUR |
| IXTQ22N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 7.02 EUR |
| 13+ | 5.76 EUR |
| 14+ | 5.13 EUR |
| 30+ | 4.46 EUR |
| IXTQ26N50P |
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Hersteller: IXYS
IXTQ26N50P THT N channel transistors
IXTQ26N50P THT N channel transistors
auf Bestellung 210 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.28 EUR |
| 12+ | 5.98 EUR |
| IXTQ26P20P |
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Hersteller: IXYS
IXTQ26P20P THT P channel transistors
IXTQ26P20P THT P channel transistors
auf Bestellung 294 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.44 EUR |
| 12+ | 5.98 EUR |
| 13+ | 5.65 EUR |
| IXTQ34N65X2M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.71 EUR |
| 8+ | 9.62 EUR |
| 10+ | 8.51 EUR |
| 30+ | 7.72 EUR |
| IXTQ36N50P |
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Hersteller: IXYS
IXTQ36N50P THT N channel transistors
IXTQ36N50P THT N channel transistors
auf Bestellung 268 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 13.28 EUR |
| 7+ | 10.38 EUR |
| IXTQ460P2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Type of transistor: N-MOSFET
Technology: Polar2™
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Gate charge: 48nC
Reverse recovery time: 400ns
On-state resistance: 0.27Ω
Drain current: 24A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Power dissipation: 480W
Kind of channel: enhancement
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Type of transistor: N-MOSFET
Technology: Polar2™
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Gate charge: 48nC
Reverse recovery time: 400ns
On-state resistance: 0.27Ω
Drain current: 24A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Power dissipation: 480W
Kind of channel: enhancement
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 118 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.88 EUR |
| 13+ | 5.76 EUR |
| 15+ | 5.08 EUR |
| 30+ | 4.83 EUR |
| IXTQ48N65X2M |
Hersteller: IXYS
IXTQ48N65X2M THT N channel transistors
IXTQ48N65X2M THT N channel transistors
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.87 EUR |
| 8+ | 9.54 EUR |
| IXTQ50N20P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 217 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.11 EUR |
| 16+ | 4.56 EUR |
| 30+ | 3.76 EUR |
| 60+ | 3.59 EUR |
| IXTQ52P10P |
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Hersteller: IXYS
IXTQ52P10P THT P channel transistors
IXTQ52P10P THT P channel transistors
auf Bestellung 123 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.58 EUR |
| 12+ | 5.98 EUR |
| 13+ | 5.65 EUR |
| 60+ | 5.45 EUR |
| IXTQ60N20T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Drain current: 60A
Drain-source voltage: 200V
Power dissipation: 500W
Kind of channel: enhancement
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Drain current: 60A
Drain-source voltage: 200V
Power dissipation: 500W
Kind of channel: enhancement
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 218 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.38 EUR |
| 16+ | 4.76 EUR |
| 30+ | 4.22 EUR |
| 120+ | 3.55 EUR |
| 510+ | 3.45 EUR |
| IXTQ76N25T |
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Hersteller: IXYS
IXTQ76N25T THT N channel transistors
IXTQ76N25T THT N channel transistors
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.72 EUR |
| 14+ | 5.15 EUR |
| IXTQ82N25P |
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Hersteller: IXYS
IXTQ82N25P THT N channel transistors
IXTQ82N25P THT N channel transistors
auf Bestellung 298 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 12.04 EUR |
| 9+ | 8.17 EUR |
| 10+ | 7.72 EUR |
| 120+ | 7.54 EUR |
| IXTQ88N30P |
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Hersteller: IXYS
IXTQ88N30P THT N channel transistors
IXTQ88N30P THT N channel transistors
auf Bestellung 264 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 15.73 EUR |
| 7+ | 10.81 EUR |
| 8+ | 10.21 EUR |
| 30+ | 10.07 EUR |
| IXTR20P50P |
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Hersteller: IXYS
IXTR20P50P THT P channel transistors
IXTR20P50P THT P channel transistors
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 10.12 EUR |
| 10+ | 7.49 EUR |
| IXTR210P10T |
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Hersteller: IXYS
IXTR210P10T THT P channel transistors
IXTR210P10T THT P channel transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 44.62 EUR |
| 3+ | 32.52 EUR |
| IXTR36P15P |
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Hersteller: IXYS
IXTR36P15P THT P channel transistors
IXTR36P15P THT P channel transistors
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 7.14 EUR |
| 13+ | 5.55 EUR |
| 14+ | 5.23 EUR |
| IXTR40P50P |
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Hersteller: IXYS
IXTR40P50P THT P channel transistors
IXTR40P50P THT P channel transistors
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 18.02 EUR |
| 6+ | 13.23 EUR |
| IXTR48P20P |
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Hersteller: IXYS
IXTR48P20P THT P channel transistors
IXTR48P20P THT P channel transistors
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 10.12 EUR |
| 10+ | 7.49 EUR |
| IXTR90P20P |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Case: ISOPLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -53A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 48mΩ
Power dissipation: 312W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Case: ISOPLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -53A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 48mΩ
Power dissipation: 312W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 10.2 EUR |
| IXTT02N450HV |
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Hersteller: IXYS
IXTT02N450HV SMD N channel transistors
IXTT02N450HV SMD N channel transistors
auf Bestellung 147 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 35.76 EUR |
| 3+ | 28.3 EUR |
| 30+ | 27.38 EUR |
| IXTT16P60P |
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Hersteller: IXYS
IXTT16P60P SMD P channel transistors
IXTT16P60P SMD P channel transistors
auf Bestellung 124 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 18.56 EUR |
| 6+ | 12.4 EUR |
| 7+ | 11.73 EUR |
| 30+ | 11.44 EUR |
| IXTT170N10P |
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Hersteller: IXYS
IXTT170N10P SMD N channel transistors
IXTT170N10P SMD N channel transistors
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 15.86 EUR |
| 7+ | 10.45 EUR |
| 10+ | 10.1 EUR |
| IXTT24P20 |
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Hersteller: IXYS
IXTT24P20 SMD P channel transistors
IXTT24P20 SMD P channel transistors
auf Bestellung 183 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 15.39 EUR |
| 7+ | 10.64 EUR |
| 8+ | 10.07 EUR |
| IXTT50P10 |
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Hersteller: IXYS
IXTT50P10 SMD P channel transistors
IXTT50P10 SMD P channel transistors
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.77 EUR |
| 8+ | 9.41 EUR |
| 9+ | 8.89 EUR |
| 30+ | 8.55 EUR |
| IXTT68P20T |
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Hersteller: IXYS
IXTT68P20T SMD P channel transistors
IXTT68P20T SMD P channel transistors
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 18.62 EUR |
| 5+ | 17.6 EUR |
| 30+ | 16.97 EUR |
| IXTT75N10L2 |
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Hersteller: IXYS
IXTT75N10L2 SMD N channel transistors
IXTT75N10L2 SMD N channel transistors
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 2+ | 35.75 EUR |
| 4+ | 17.88 EUR |
| 30+ | 13.73 EUR |
| IXTT88N30P |
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Hersteller: IXYS
IXTT88N30P SMD N channel transistors
IXTT88N30P SMD N channel transistors
auf Bestellung 74 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 17.16 EUR |
| 6+ | 12.6 EUR |
| IXTT8P50 |
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Hersteller: IXYS
IXTT8P50 SMD P channel transistors
IXTT8P50 SMD P channel transistors
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.35 EUR |
| 9+ | 8.12 EUR |
| IXTU4N70X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.66 EUR |
| 30+ | 2.4 EUR |
| 34+ | 2.12 EUR |
| 70+ | 1.92 EUR |
| IXTU8N70X2 |
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Hersteller: IXYS
IXTU8N70X2 THT N channel transistors
IXTU8N70X2 THT N channel transistors
auf Bestellung 66 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.16 EUR |
| 29+ | 2.55 EUR |
| 30+ | 2.42 EUR |
| 560+ | 2.32 EUR |
| IXTX120P20T |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PLUS247™
Mounting: THT
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Gate charge: 740nC
Reverse recovery time: 300ns
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PLUS247™
Mounting: THT
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Gate charge: 740nC
Reverse recovery time: 300ns
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 28.6 EUR |
| 10+ | 26.84 EUR |
| IXTX210P10T |
Hersteller: IXYS
IXTX210P10T THT P channel transistors
IXTX210P10T THT P channel transistors
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 36.31 EUR |
| 3+ | 30.17 EUR |
| 30+ | 29.01 EUR |
| IXTX8N150L |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
Drain current: 8A
Drain-source voltage: 1.5kV
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
Drain current: 8A
Drain-source voltage: 1.5kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 40.9 EUR |
| IXTX90P20P |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Case: PLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -90A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 44mΩ
Power dissipation: 890W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Case: PLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -90A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 44mΩ
Power dissipation: 890W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 138 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 17.42 EUR |
| IXTY01N100 |
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Hersteller: IXYS
IXTY01N100 SMD N channel transistors
IXTY01N100 SMD N channel transistors
auf Bestellung 346 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.65 EUR |
| 36+ | 2 EUR |
| 38+ | 1.9 EUR |
| IXTY08N100D2 |
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Hersteller: IXYS
IXTY08N100D2 SMD N channel transistors
IXTY08N100D2 SMD N channel transistors
auf Bestellung 207 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.65 EUR |
| 24+ | 3.09 EUR |
| 25+ | 2.92 EUR |
| IXTY14N60X2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 350 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.51 EUR |
| 17+ | 4.25 EUR |
| 25+ | 3.73 EUR |
| 70+ | 3.66 EUR |
| IXTY1N120P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO252
Mounting: SMD
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Reverse recovery time: 900ns
On-state resistance: 20Ω
Power dissipation: 63W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO252
Mounting: SMD
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Reverse recovery time: 900ns
On-state resistance: 20Ω
Power dissipation: 63W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 74 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.95 EUR |
| 28+ | 2.65 EUR |
| 31+ | 2.33 EUR |
| 70+ | 2.22 EUR |
| IXTY1R6N100D2 |
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Hersteller: IXYS
IXTY1R6N100D2 SMD N channel transistors
IXTY1R6N100D2 SMD N channel transistors
auf Bestellung 370 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.21 EUR |
| 25+ | 2.86 EUR |
| 27+ | 2.7 EUR |
| IXTY1R6N50D2 |
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Hersteller: IXYS
IXTY1R6N50D2 SMD N channel transistors
IXTY1R6N50D2 SMD N channel transistors
auf Bestellung 348 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.58 EUR |
| 25+ | 2.86 EUR |
| 27+ | 2.7 EUR |
| 50+ | 2.63 EUR |
| IXTY3N50P |
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Hersteller: IXYS
IXTY3N50P SMD N channel transistors
IXTY3N50P SMD N channel transistors
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.23 EUR |
| 35+ | 2.04 EUR |
| 95+ | 0.76 EUR |
| IXTY44N10T |
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Hersteller: IXYS
IXTY44N10T SMD N channel transistors
IXTY44N10T SMD N channel transistors
auf Bestellung 285 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.29 EUR |
| 40+ | 1.8 EUR |
| 43+ | 1.7 EUR |
| 140+ | 1.63 EUR |
| IXTY4N65X2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Technology: X2-Class
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Technology: X2-Class
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 11.91 EUR |
| 10+ | 7.15 EUR |
| 25+ | 2.86 EUR |
| 70+ | 1.69 EUR |
| IXTY8N65X2 |
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Hersteller: IXYS
IXTY8N65X2 SMD N channel transistors
IXTY8N65X2 SMD N channel transistors
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.1 EUR |
| 36+ | 1.99 EUR |
| 1050+ | 1.19 EUR |
| IXXH110N65C4 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Collector-emitter voltage: 650V
Turn-off time: 160ns
Gate charge: 167nC
Turn-on time: 71ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Collector-emitter voltage: 650V
Turn-off time: 160ns
Gate charge: 167nC
Turn-on time: 71ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 226 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.84 EUR |
| 6+ | 12.43 EUR |
| 10+ | 10.88 EUR |
| 30+ | 10.1 EUR |
| IXXH150N60C3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 700A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 700A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 294 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 15.32 EUR |
| 10+ | 13.38 EUR |
| 30+ | 12.04 EUR |









