| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| LBB110PTR | IXYS |
 Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS Case: DIP8 Mounting: SMT Contacts configuration: SPST-NC x2 Kind of output: MOSFET Type of relay: solid state Operating temperature: -40...85°C Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.66x6.35x2.16mm Control current max.: 50mA Max. operating current: 120mA On-state resistance: 35Ω Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source Insulation voltage: 3.75kV Manufacturer series: OptoMOS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| LBB110STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS Case: DIP8 Mounting: SMT Contacts configuration: SPST-NC x2 Kind of output: MOSFET Type of relay: solid state Operating temperature: -40...85°C Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.65x6.35x3.3mm Control current max.: 50mA Max. operating current: 120mA On-state resistance: 35Ω Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source Insulation voltage: 3.75kV Manufacturer series: OptoMOS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| LF2136BTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Case: SO28 Mounting: SMD Kind of package: reel; tape Supply voltage: 10...20V Output current: -0.35...0.2A Type of integrated circuit: driver Operating temperature: -40...125°C Voltage class: 600V Kind of integrated circuit: gate driver; high-/low-side Number of channels: 6 Topology: IGBT three-phase bridge; MOSFET three-phase bridge |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IX2120B | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A Mounting: SMD Operating temperature: -40...150°C Output current: -2...2A Type of integrated circuit: driver Voltage class: 1.2kV Kind of package: tube Case: SO28 Kind of integrated circuit: gate driver; high-/low-side Number of channels: 2 Topology: IGBT half-bridge; MOSFET half-bridge Supply voltage: 15...20V |
auf Bestellung 230 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFA130N10T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO263 On-state resistance: 10.1mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 130nC Features of semiconductor devices: thrench gate power mosfet Kind of package: tube |
auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTN30N100L | IXYS |
Category: Transistor modules Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W Technology: Linear™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Power dissipation: 800W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.45Ω Kind of channel: enhancement Gate charge: 545nC Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 1µs Pulsed drain current: 70A Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTB30N100L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Power dissipation: 800W Case: PLUS264™ On-state resistance: 0.45Ω Mounting: THT Kind of channel: enhancement Gate charge: 545nC Features of semiconductor devices: linear power mosfet Kind of package: tube Reverse recovery time: 1µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IXTA130N10T-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchMV™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO263 Gate-source voltage: ±30V On-state resistance: 9.1mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 104nC Kind of package: reel; tape Reverse recovery time: 77ns Pulsed drain current: 350A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFP130N10T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO220AB On-state resistance: 10.1mΩ Mounting: THT Kind of channel: enhancement Gate charge: 130nC Features of semiconductor devices: thrench gate power mosfet Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTP130N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO220AB On-state resistance: 9.1mΩ Mounting: THT Kind of channel: enhancement Gate charge: 104nC Features of semiconductor devices: thrench gate power mosfet Kind of package: tube Reverse recovery time: 67ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA130N10T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchMV™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO263 Gate-source voltage: ±30V On-state resistance: 9.1mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 104nC Kind of package: tube Reverse recovery time: 77ns Pulsed drain current: 350A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTA130N10T7 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchMV™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO263-7 Gate-source voltage: ±20V On-state resistance: 9.1mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 104nC Kind of package: tube Reverse recovery time: 77ns Pulsed drain current: 350A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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DSP25-12AT-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A Max. off-state voltage: 1.2kV Load current: 25A Semiconductor structure: double series Case: D3PAK Type of diode: rectifying Mounting: SMD Max. forward impulse current: 0.3kA Max. forward voltage: 1.16V Power dissipation: 160W |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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| LIA136 | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: THT Kind of output: isolation amplifier Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| LIA136S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: SMD Kind of output: isolation amplifier Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| LIA135 | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: THT Kind of output: isolation amplifier Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| LIA136STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: SMD Kind of output: isolation amplifier Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXGA48N60A3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: SMD Gate charge: 110nC Kind of package: tube Turn-on time: 54ns Turn-off time: 925ns |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PLA192S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PLA192STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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CPC1708J | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; OptoMOS; 0.08Ω Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 5350mA Switched voltage: max. 60V DC Manufacturer series: OptoMOS Relay variant: current source On-state resistance: 80mΩ Mounting: THT Case: i4-pac Operating temperature: -40...85°C Kind of output: MOSFET Body dimensions: 19.91x20.88x5.03mm Insulation voltage: 2.5kV Turn-on time: 20ms Turn-off time: 5ms Control current max.: 50mA |
Produkt ist nicht verfügbar |
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| VHFD29-16IO1 | IXYS |
Category: Single phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; Igt: 65mA Type of bridge rectifier: half-controlled Max. off-state voltage: 1.6kV Load current: 32A Max. forward impulse current: 0.44kA Gate current: 65mA Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Case: V1-A-Pack Leads: connectors Leads dimensions: 2x0.5mm Features of semiconductor devices: field diodes; freewheelling diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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DSSK48-003BS | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 30V; 25Ax2; reel,tape; 105W Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 30V Load current: 25A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.35V Max. forward impulse current: 0.3kA Kind of package: reel; tape Power dissipation: 105W |
auf Bestellung 549 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH75N10L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 400W Case: TO247-3 On-state resistance: 21mΩ Mounting: THT Gate charge: 215nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 180ns Technology: Linear L2™ Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXYH50N120C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 625W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 210A Mounting: THT Gate charge: 142nC Kind of package: tube Turn-on time: 96ns Turn-off time: 0.22µs |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXGN50N120C3H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B Technology: GenX3™; PT Collector current: 50A Power dissipation: 460W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 240A Semiconductor structure: single transistor Type of semiconductor module: IGBT Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXYH50N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 750W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 142nC Kind of package: tube Turn-on time: 96ns Turn-off time: 0.22µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXYR50N120C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 32A Power dissipation: 290W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 210A Mounting: THT Gate charge: 142nC Kind of package: tube Turn-on time: 96ns Turn-off time: 0.22µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH50N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 460W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 196nC Kind of package: tube Turn-on time: 55ns Turn-off time: 485ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGK50N120C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 460W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 196nC Kind of package: tube Turn-on time: 60ns Turn-off time: 485ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGX50N120C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 460W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 196nC Kind of package: tube Turn-on time: 60ns Turn-off time: 485ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH24N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 390W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Gate charge: 36nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXYH16N250C | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3 Type of transistor: IGBT Technology: XPT™ Power dissipation: 500W Case: TO247-3 Mounting: THT Gate charge: 97nC Kind of package: tube Collector current: 16A Collector-emitter voltage: 2.5kV Features of semiconductor devices: high voltage Pulsed collector current: 64A Turn-on time: 14ns Turn-off time: 260ns Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IXYH16N250CV1HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV Type of transistor: IGBT Technology: XPT™ Power dissipation: 500W Case: TO247HV Mounting: THT Gate charge: 97nC Kind of package: tube Collector current: 16A Collector-emitter voltage: 2.5kV Features of semiconductor devices: high voltage Pulsed collector current: 126A Turn-on time: 39ns Turn-off time: 541ns Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1788J | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS Mounting: THT Kind of output: MOSFET Case: ISOPLUS264™ Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 20ms Switched voltage: max. 1kV DC Max. operating current: 1.2A Turn-off time: 5ms Control current max.: 100mA On-state resistance: 1.25Ω Type of relay: solid state Manufacturer series: OptoMOS Relay variant: current source Body dimensions: 19.91x26.16x5.03mm |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1705Y | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 3250mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω Type of relay: solid state Contacts configuration: SPST-NC Max. operating current: 3.25A Switched voltage: max. 60V DC Manufacturer series: OptoMOS Relay variant: current source On-state resistance: 90mΩ Mounting: THT Case: SOP4 Operating temperature: -40...85°C Kind of output: MOSFET Body dimensions: 21.08x10.16x3.3mm Insulation voltage: 2.5kV Turn-on time: 2ms Turn-off time: 12ms Control current max.: 50mA |
Produkt ist nicht verfügbar |
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PLA171P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 0.1A Switched voltage: max. 800V AC; max. 800V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Operating temperature: -40...85°C Kind of output: MOSFET Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 5kV Turn-on time: 5ms Turn-off time: 5ms Control current max.: 50mA |
Produkt ist nicht verfügbar |
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PLB171P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 80mA Switched voltage: max. 800V AC; max. 800V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 90Ω Mounting: SMT Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 5kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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PLA134 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 350mA Switched voltage: max. 100V AC; max. 100V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 3Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Kind of output: MOSFET Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Control current max.: 50mA |
Produkt ist nicht verfügbar |
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CPC1981Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 180mA Switched voltage: max. 1kV AC Manufacturer series: OptoMOS Relay variant: 1-phase On-state resistance: 18Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Kind of output: MOSFET Body dimensions: 21.08x10.16x3.3mm Insulation voltage: 2.5kV Turn-on time: 10ms Turn-off time: 5ms Control current max.: 50mA |
Produkt ist nicht verfügbar |
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IXBF42N300 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c Type of transistor: IGBT Technology: BiMOSFET™ Collector-emitter voltage: 3kV Collector current: 24A Power dissipation: 240W Case: ISOPLUS i4-pac™ x024c Gate-emitter voltage: ±20V Pulsed collector current: 380A Mounting: THT Gate charge: 200nC Kind of package: tube Turn-on time: 652ns Turn-off time: 950ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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LCA210LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 85mA Mounting: SMT Manufacturer series: OptoMOS Switched voltage: max. 350V AC; max. 350V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 3ms Control current max.: 100mA On-state resistance: 35Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
Produkt ist nicht verfügbar |
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| LCA220STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC Type of relay: solid state Contacts configuration: SPDT Max. operating current: 120mA Mounting: SMT Manufacturer series: OptoMOS Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 100mA On-state resistance: 20Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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LCA210L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 85mA Mounting: THT Manufacturer series: OptoMOS Switched voltage: max. 350V AC; max. 350V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 3ms Control current max.: 100mA On-state resistance: 35Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| LCA210LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 85mA Mounting: SMT Manufacturer series: OptoMOS Switched voltage: max. 350V AC; max. 350V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 3ms Control current max.: 100mA On-state resistance: 35Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| LCA210STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 85mA Mounting: SMT Manufacturer series: OptoMOS Switched voltage: max. 350V AC; max. 350V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 3ms Control current max.: 100mA On-state resistance: 35Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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LCA220S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC Type of relay: solid state Contacts configuration: SPDT Max. operating current: 120mA Mounting: SMT Manufacturer series: OptoMOS Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 100mA On-state resistance: 20Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXTP8N70X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 8A Power dissipation: 32W Case: TO220FP On-state resistance: 0.55Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns Features of semiconductor devices: ultra junction x-class |
auf Bestellung 283 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP14N85XM | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 14A Power dissipation: 38W Case: TO220FP On-state resistance: 0.55Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 116ns Features of semiconductor devices: ultra junction x-class |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYK120N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 1.5kW Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 700A Mounting: THT Gate charge: 412nC Kind of package: tube Turn-on time: 105ns Turn-off time: 346ns |
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IXYX120N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 1.5kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 800A Mounting: THT Gate charge: 400nC Kind of package: tube Turn-on time: 84ns Turn-off time: 826ns |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYX120N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 1.5kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 700A Mounting: THT Gate charge: 412nC Kind of package: tube Turn-on time: 105ns Turn-off time: 346ns |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFT120N15P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268 Mounting: SMD Power dissipation: 600W Gate charge: 150nC Polarisation: unipolar Technology: HiPerFET™; PolarHT™ Drain current: 120A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO268 On-state resistance: 16mΩ Reverse recovery time: 200ns |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFT120N25X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 480W Case: TO268HV On-state resistance: 12mΩ Mounting: SMD Gate charge: 122nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 140ns Features of semiconductor devices: ultra junction x-class |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN609SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 184 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN609SIA | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH2N300P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 3kV Drain current: 2A Power dissipation: 520W Case: TO247HV On-state resistance: 21Ω Mounting: THT Gate charge: 73nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
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Im Einkaufswagen Stück im Wert von UAH |
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DSA30C60PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.72V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.72V Max. forward impulse current: 340A Power dissipation: 85W Kind of package: tube Heatsink thickness: 1.14...1.39mm |
auf Bestellung 327 Stücke: Lieferzeit 14-21 Tag (e) |
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DSI45-16A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W Semiconductor structure: single diode Case: TO247-2 Mounting: THT Type of diode: rectifying Max. forward voltage: 1.23V Load current: 45A Power dissipation: 270W Max. forward impulse current: 0.48kA Max. off-state voltage: 1.6kV Kind of package: tube |
auf Bestellung 227 Stücke: Lieferzeit 14-21 Tag (e) |
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DSI45-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-2; 270W Semiconductor structure: single diode Case: TO247-2 Mounting: THT Type of diode: rectifying Max. forward voltage: 1.23V Load current: 45A Power dissipation: 270W Max. forward impulse current: 0.48kA Max. off-state voltage: 1.2kV Kind of package: tube |
auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) |
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| LBB110PTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| LBB110STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| LF2136BTR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Case: SO28
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Output current: -0.35...0.2A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Case: SO28
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Output current: -0.35...0.2A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| IX2120B |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Mounting: SMD
Operating temperature: -40...150°C
Output current: -2...2A
Type of integrated circuit: driver
Voltage class: 1.2kV
Kind of package: tube
Case: SO28
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: IGBT half-bridge; MOSFET half-bridge
Supply voltage: 15...20V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Mounting: SMD
Operating temperature: -40...150°C
Output current: -2...2A
Type of integrated circuit: driver
Voltage class: 1.2kV
Kind of package: tube
Case: SO28
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: IGBT half-bridge; MOSFET half-bridge
Supply voltage: 15...20V
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFA130N10T2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTN30N100L |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.45Ω
Kind of channel: enhancement
Gate charge: 545nC
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Pulsed drain current: 70A
Type of semiconductor module: MOSFET transistor
Category: Transistor modules
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.45Ω
Kind of channel: enhancement
Gate charge: 545nC
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Pulsed drain current: 70A
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTB30N100L |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 545nC
Features of semiconductor devices: linear power mosfet
Kind of package: tube
Reverse recovery time: 1µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 545nC
Features of semiconductor devices: linear power mosfet
Kind of package: tube
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA130N10T-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 104nC
Kind of package: reel; tape
Reverse recovery time: 77ns
Pulsed drain current: 350A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 104nC
Kind of package: reel; tape
Reverse recovery time: 77ns
Pulsed drain current: 350A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFP130N10T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 130nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 130nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTP130N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 104nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Reverse recovery time: 67ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 104nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Reverse recovery time: 67ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA130N10T |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 104nC
Kind of package: tube
Reverse recovery time: 77ns
Pulsed drain current: 350A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 104nC
Kind of package: tube
Reverse recovery time: 77ns
Pulsed drain current: 350A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA130N10T7 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 104nC
Kind of package: tube
Reverse recovery time: 77ns
Pulsed drain current: 350A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 104nC
Kind of package: tube
Reverse recovery time: 77ns
Pulsed drain current: 350A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSP25-12AT-TUB |
|
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Max. off-state voltage: 1.2kV
Load current: 25A
Semiconductor structure: double series
Case: D3PAK
Type of diode: rectifying
Mounting: SMD
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.16V
Power dissipation: 160W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Max. off-state voltage: 1.2kV
Load current: 25A
Semiconductor structure: double series
Case: D3PAK
Type of diode: rectifying
Mounting: SMD
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.16V
Power dissipation: 160W
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
| LIA136 |
|
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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| LIA136S |
|
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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| LIA135 |
|
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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| LIA136STR |
|
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| IXGA48N60A3 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
| PLA192S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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| PLA192STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| CPC1708J |
|
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; OptoMOS; 0.08Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 5350mA
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 80mΩ
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Control current max.: 50mA
Category: DC Solid State Relays
Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; OptoMOS; 0.08Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 5350mA
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 80mΩ
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Control current max.: 50mA
Produkt ist nicht verfügbar
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| VHFD29-16IO1 |
|
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 0.44kA
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 0.44kA
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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| DSSK48-003BS |
|
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 30V; 25Ax2; reel,tape; 105W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 30V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.35V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Power dissipation: 105W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 30V; 25Ax2; reel,tape; 105W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 30V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.35V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Power dissipation: 105W
auf Bestellung 549 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH75N10L2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: Linear L2™
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: Linear L2™
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXYH50N120C3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 210A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 210A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
| IXGN50N120C3H1 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Technology: GenX3™; PT
Collector current: 50A
Power dissipation: 460W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Technology: GenX3™; PT
Collector current: 50A
Power dissipation: 460W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Produkt ist nicht verfügbar
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| IXYH50N120C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Produkt ist nicht verfügbar
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| IXYR50N120C3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 290W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 210A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 290W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 210A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Produkt ist nicht verfügbar
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| IXGH50N120C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
Produkt ist nicht verfügbar
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| IXGK50N120C3H1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 485ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 485ns
Produkt ist nicht verfügbar
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| IXGX50N120C3H1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 485ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 485ns
Produkt ist nicht verfügbar
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| IXTH24N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 36nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 36nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXYH16N250C |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Collector current: 16A
Collector-emitter voltage: 2.5kV
Features of semiconductor devices: high voltage
Pulsed collector current: 64A
Turn-on time: 14ns
Turn-off time: 260ns
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Power dissipation: 500W
Case: TO247-3
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Collector current: 16A
Collector-emitter voltage: 2.5kV
Features of semiconductor devices: high voltage
Pulsed collector current: 64A
Turn-on time: 14ns
Turn-off time: 260ns
Gate-emitter voltage: ±20V
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| IXYH16N250CV1HV |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Power dissipation: 500W
Case: TO247HV
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Collector current: 16A
Collector-emitter voltage: 2.5kV
Features of semiconductor devices: high voltage
Pulsed collector current: 126A
Turn-on time: 39ns
Turn-off time: 541ns
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Power dissipation: 500W
Case: TO247HV
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Collector current: 16A
Collector-emitter voltage: 2.5kV
Features of semiconductor devices: high voltage
Pulsed collector current: 126A
Turn-on time: 39ns
Turn-off time: 541ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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| CPC1788J |
|
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Mounting: THT
Kind of output: MOSFET
Case: ISOPLUS264™
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 1kV DC
Max. operating current: 1.2A
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 1.25Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Body dimensions: 19.91x26.16x5.03mm
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Mounting: THT
Kind of output: MOSFET
Case: ISOPLUS264™
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 1kV DC
Max. operating current: 1.2A
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 1.25Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Body dimensions: 19.91x26.16x5.03mm
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1705Y |
|
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 3250mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 3.25A
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 90mΩ
Mounting: THT
Case: SOP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 2ms
Turn-off time: 12ms
Control current max.: 50mA
Category: DC Solid State Relays
Description: Relay: solid state; 3250mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 3.25A
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 90mΩ
Mounting: THT
Case: SOP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 2ms
Turn-off time: 12ms
Control current max.: 50mA
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| PLA171P |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PLB171P |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
| PLA134 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 350mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 3Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 350mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 3Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPC1981Y |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 180mA
Switched voltage: max. 1kV AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 18Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 10ms
Turn-off time: 5ms
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 180mA
Switched voltage: max. 1kV AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 18Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 10ms
Turn-off time: 5ms
Control current max.: 50mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXBF42N300 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 3kV
Collector current: 24A
Power dissipation: 240W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 652ns
Turn-off time: 950ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 3kV
Collector current: 24A
Power dissipation: 240W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 652ns
Turn-off time: 950ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LCA210LS |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LCA220STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LCA210L |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LCA210LSTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LCA210STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LCA220S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP8N70X2M |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 32W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 32W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 283 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFP14N85XM |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 38W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 38W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYK120N120C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYX120N120B3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYX120N120C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFT120N15P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Mounting: SMD
Power dissipation: 600W
Gate charge: 150nC
Polarisation: unipolar
Technology: HiPerFET™; PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 16mΩ
Reverse recovery time: 200ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Mounting: SMD
Power dissipation: 600W
Gate charge: 150nC
Polarisation: unipolar
Technology: HiPerFET™; PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 16mΩ
Reverse recovery time: 200ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFT120N25X3HV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO268HV
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO268HV
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDN609SI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDN609SIA |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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| IXTH2N300P3HV |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 3kV
Drain current: 2A
Power dissipation: 520W
Case: TO247HV
On-state resistance: 21Ω
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 3kV
Drain current: 2A
Power dissipation: 520W
Case: TO247HV
On-state resistance: 21Ω
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSA30C60PB |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.72V
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.72V
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 327 Stücke:
Lieferzeit 14-21 Tag (e)
| DSI45-16A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
Kind of package: tube
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
| DSI45-12A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.2kV
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.2kV
Kind of package: tube
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)