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IXTP8N70X2M IXTP8N70X2M IXYS IXTP8N70X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 12nC
Reverse recovery time: 200ns
Power dissipation: 32W
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IXFP14N85XM IXFP14N85XM IXYS IXFP14N85XM.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Mounting: THT
Power dissipation: 38W
Gate charge: 30nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220FP
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
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IXYK120N120C3 IXYK120N120C3 IXYS IXYK(x)120N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: TO264
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Gate-emitter voltage: ±20V
Collector current: 120A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 700A
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IXYX120N120B3 IXYX120N120B3 IXYS IXYX120N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
Gate-emitter voltage: ±20V
Collector current: 120A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 800A
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IXYX120N120C3 IXYX120N120C3 IXYS IXYK(x)120N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Gate-emitter voltage: ±20V
Collector current: 120A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 700A
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IXFT120N15P IXFT120N15P IXYS IXF_120N15P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Mounting: SMD
Kind of channel: enhancement
Technology: HiPerFET™; PolarHT™
Type of transistor: N-MOSFET
Case: TO268
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 150nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 150V
Power dissipation: 600W
Kind of package: tube
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IXFT120N25X3HV IXFT120N25X3HV IXYS IXFH(T,Q)120N25X3_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO268HV
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
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IXDN609SI IXDN609SI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: tube
Output current: -9...9A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 115ns
Turn-off time: 105ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
Supply voltage: 4.5...35V
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IXDN609SIA IXDN609SIA IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXTH2N300P3HV IXTH2N300P3HV IXYS IXTH(T)2N300P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 3kV
Drain current: 2A
Power dissipation: 520W
Case: TO247HV
On-state resistance: 21Ω
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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DSA30C60PB DSA30C60PB IXYS DSA30C60PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.72V
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
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DSI45-16A DSI45-16A IXYS DSI45-16A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
Kind of package: tube
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DSI45-12A DSI45-12A IXYS DSI45-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.2kV
Kind of package: tube
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DSI45-16AR DSI45-16AR IXYS DSI45-16AR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™
Semiconductor structure: single diode
Case: ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 165W
Max. forward impulse current: 410A
Max. off-state voltage: 1.6kV
Kind of package: tube
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DSEP15-12CR DSEP15-12CR IXYS DSEP15-12CR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 110A; ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward voltage: 2.67V
Max. forward impulse current: 110A
Power dissipation: 150W
Max. off-state voltage: 1.2kV
Load current: 15A
Kind of package: tube
Case: ISOPLUS247™
Features of semiconductor devices: fast switching
Technology: HiPerDynFRED
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IXGA12N120A3 IXGA12N120A3 IXYS IXGA(p,h)12N120A3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Collector current: 12A
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Technology: GenX3™; PT
Type of transistor: IGBT
Kind of package: tube
Gate charge: 20.4nC
Turn-on time: 202ns
Turn-off time: 1545ns
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGA12N120A3-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 22A; 100W; D2PAK
Collector current: 22A
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Type of transistor: IGBT
Kind of package: reel; tape
Gate charge: 20.4nC
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
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MEK350-02DA IXYS PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double,common cathode; 200V; If: 356A; Y4-M6; screw
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 0.92V
Max. off-state voltage: 200V
Load current: 356A
Max. forward impulse current: 2.4kA
Produkt ist nicht verfügbar
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IXCP10M45S IXCP10M45S IXYS IXCP10M90S.pdf Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
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IXCY10M45S IXCY10M45S IXYS IXCP10M90S.pdf Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Case: TO252
Mounting: SMD
Kind of integrated circuit: current regulator
Operating voltage: 450V DC
Type of integrated circuit: driver
Power dissipation: 40W
Operating temperature: -55...150°C
Operating current: 2...100mA
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IXCY10M45S-TRL IXCY10M45S-TRL IXYS 98704.pdf Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Case: TO252
Mounting: SMD
Kind of integrated circuit: current regulator
Operating voltage: 450V DC
Type of integrated circuit: driver
Power dissipation: 40W
Operating temperature: -55...150°C
Operating current: 2...100mA
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IXBH42N170 IXBH42N170 IXYS IXBH42N170_IXBT42N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXFP20N85X IXFP20N85X IXYS IXFH(P)20N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Mounting: THT
Power dissipation: 540W
Gate charge: 63nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 0.33Ω
Reverse recovery time: 190ns
Produkt ist nicht verfügbar
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CPC1998J CPC1998J IXYS cpc1998.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 150mA; 5000mA; max.240VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 20.88x19.91x5.03mm
Insulation voltage: 2.5kV
Switching method: zero voltage switching
Switched voltage: max. 240V AC
Case: i4-pac
Max. operating current: 5A
Control current max.: 150mA
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
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CPC1961G CPC1961G IXYS CPC1961.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP8
Max. operating current: 250mA
Control current max.: 50mA
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
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CPC1918J CPC1918J IXYS CPC1918.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 25ms
Switched voltage: max. 100V AC; max. 100V DC
Case: ISOPLUS264™
Max. operating current: 5250mA
Turn-off time: 10ms
Control current max.: 100mA
On-state resistance: 0.1Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
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CPC1983Y CPC1983Y IXYS CPC1983.pdf Category: DC Solid State Relays
Description: Relay: solid state; 500mA; max.600VDC; THT; SIP4; OptoMOS; 6Ω; 2.5kV
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 5ms
Switched voltage: max. 600V DC
Case: SIP4
Max. operating current: 0.5A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 6Ω
Type of relay: solid state
Mounting: THT
Relay variant: current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1978J CPC1978J IXYS CPC1978.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 750mA; max.800VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 800V AC; max. 800V DC
Case: i4-pac
Max. operating current: 750mA
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 2.3Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1984Y CPC1984Y IXYS CPC1984Y.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 4kV
Turn-on time: 10ms
Switched voltage: max. 600V AC; max. 600V DC
Case: SIP4
Max. operating current: 1A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 0.66Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1977J CPC1977J IXYS CPC1977.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 600V AC; max. 600V DC
Case: i4-pac
Max. operating current: 1.25A
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 1Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
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CPC1979J CPC1979J IXYS CPC1979.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 25ms
Switched voltage: max. 600V AC; max. 600V DC
Case: ISOPLUS264™
Max. operating current: 1.4A
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 0.75Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXFH140N20X3 IXFH140N20X3 IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
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IXFN140N20P IXFN140N20P IXYS IXFN140N20P.pdf description Category: Transistor modules
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
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IXFR140N20P IXFR140N20P IXYS IXFR140N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FBE22-06N1 FBE22-06N1 IXYS FBE22-06N1.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 22A
Max. forward impulse current: 50A
Case: ISOPLUS i4-pac™ x024a
Electrical mounting: THT
Kind of package: tube
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VUE22-06NO7 VUE22-06NO7 IXYS VUE22-06NO7.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 34A; Ifsm: 50A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 34A
Max. forward impulse current: 50A
Version: module
Case: ECO-PAC 1
Electrical mounting: THT
Max. forward voltage: 2.09V
Technology: FRED
Mechanical mounting: screw
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CMA40E1600HR IXYS CMA40E1600HR.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
Max. forward impulse current: 470A
Load current: 40A
Max. off-state voltage: 1.6kV
Max. load current: 63A
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MCMA400PD1600P-PC IXYS Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; screw
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Load current: 400A
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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MCMA400PD1600PTSF IXYS Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. load current: 630A
Max. forward impulse current: 10kA
Load current: 400A
Produkt ist nicht verfügbar
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CPC3902ZTR CPC3902ZTR IXYS CPC3902.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 0.4A
Kind of channel: depletion
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±15V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 2.5Ω
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DPG60C400QB DPG60C400QB IXYS Littelfuse-Power-Semiconductors-DPG60C400QB-Datasheet?assetguid=3C71B727-26DC-4961-AA47-E6824A25148C Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Case: TO3P
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 45ns
Max. forward voltage: 1.41V
Max. forward impulse current: 360A
Load current: 30A x2
Power dissipation: 160W
Max. off-state voltage: 0.4kV
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MEA75-12DA MEA75-12DA IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf MEx75-12DA.pdf Category: Diode modules
Description: Module: diode; double,common anode; 1.2kV; If: 75A; TO240AA; screw
Case: TO240AA
Kind of package: bulk
Mechanical mounting: screw
Max. forward voltage: 1.85V
Load current: 75A
Max. forward impulse current: 1.2kA
Max. off-state voltage: 1.2kV
Semiconductor structure: common anode; double
Type of semiconductor module: diode
Electrical mounting: screw
auf Bestellung 100 Stücke:
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MEE75-12DA IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf MEx75-12DA.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Case: TO240AA
Kind of package: bulk
Mechanical mounting: screw
Max. forward voltage: 1.85V
Load current: 75A
Max. forward impulse current: 1.2kA
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Produkt ist nicht verfügbar
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VUO52-16NO1 VUO52-16NO1 IXYS VUO52-16NO1.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 0.83V
Leads: connectors
Leads dimensions: 2x0.5mm
Case: V1-A-Pack
Mechanical mounting: screw
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IXFR140N30P IXFR140N30P IXYS IXFR140N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™
Mounting: THT
Gate charge: 185nC
On-state resistance: 28mΩ
Polarisation: unipolar
Kind of package: tube
Drain current: 70A
Type of transistor: N-MOSFET
Case: ISOPLUS247™
Drain-source voltage: 300V
Power dissipation: 300W
Kind of channel: enhancement
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IXFX140N30P IXFX140N30P IXYS IXFK140N30P_IXFX140N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™
Mounting: THT
Gate charge: 185nC
On-state resistance: 24mΩ
Polarisation: unipolar
Kind of package: tube
Drain current: 140A
Type of transistor: N-MOSFET
Case: PLUS247™
Drain-source voltage: 300V
Power dissipation: 1.04kW
Kind of channel: enhancement
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DPT15I600PA IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220-2; 28ns
Mounting: THT
Case: TO220-2
Kind of package: tube
Reverse recovery time: 28ns
Load current: 15A
Max. forward impulse current: 150A
Max. off-state voltage: 0.6kV
Technology: FRED
Type of diode: rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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VUO86-16NO7 VUO86-16NO7 IXYS VUO86-16NO7.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 86A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.51V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
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VUO36-16NO8 VUO36-16NO8 IXYS VUO36.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 27A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: square
Max. forward voltage: 1.05V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: FO-B
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MIXG300PF1700TSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 315A
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD255-12N1 MDD255-12N1 IXYS MDD255-xxN1-DTE.pdf MDD255-xxN1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 1.2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
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MDD255-16N1 MDD255-16N1 IXYS MDD255-xxN1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Produkt ist nicht verfügbar
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MDD255-22N1 MDD255-22N1 IXYS MDD255-xxN1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Produkt ist nicht verfügbar
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MDD255-20N1 MDD255-20N1 IXYS MDD255-xxN1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Produkt ist nicht verfügbar
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MDD255-18N1 IXYS MDD255-18N1.pdf Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.8kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Produkt ist nicht verfügbar
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MDD255-14N1 IXYS MDD255-14N1.pdf Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Produkt ist nicht verfügbar
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IXTP270N04T4 IXTP270N04T4 IXYS IXTH(P)270N04T4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 48ns
Features of semiconductor devices: thrench gate power mosfet
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DSEI60-02A DSEI60-02A IXYS DSEI60-02A.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; Ifsm: 540A; TO247-2; tube; 150W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 69A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 540A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 0.88V
Power dissipation: 150W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 191 Stücke:
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DSEI2X61-10B DSEI2X61-10B IXYS DSEI2X61-10B.pdf Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw
Case: SOT227B
Kind of package: tube
Type of semiconductor module: diode
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 2.3V
Max. forward impulse current: 540A
Load current: 60A x2
Max. load current: 120A
Max. off-state voltage: 1kV
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DSEI120-06A DSEI120-06A IXYS DSEI120-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.12V
Max. forward impulse current: 540A
Load current: 126A
Max. off-state voltage: 0.6kV
Technology: FRED
Produkt ist nicht verfügbar
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IXTP8N70X2M IXTP8N70X2M.pdf
IXTP8N70X2M
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 12nC
Reverse recovery time: 200ns
Power dissipation: 32W
auf Bestellung 288 Stücke:
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IXFP14N85XM IXFP14N85XM.pdf
IXFP14N85XM
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Mounting: THT
Power dissipation: 38W
Gate charge: 30nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220FP
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
auf Bestellung 38 Stücke:
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IXYK120N120C3 IXYK(x)120N120C3.pdf
IXYK120N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: TO264
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Gate-emitter voltage: ±20V
Collector current: 120A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 700A
auf Bestellung 256 Stücke:
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IXYX120N120B3 IXYX120N120B3.pdf
IXYX120N120B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
Gate-emitter voltage: ±20V
Collector current: 120A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 800A
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IXYX120N120C3 IXYK(x)120N120C3.pdf
IXYX120N120C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.5kW
Case: PLUS247™
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Gate-emitter voltage: ±20V
Collector current: 120A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 700A
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IXFT120N15P IXF_120N15P.pdf
IXFT120N15P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Mounting: SMD
Kind of channel: enhancement
Technology: HiPerFET™; PolarHT™
Type of transistor: N-MOSFET
Case: TO268
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 150nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 150V
Power dissipation: 600W
Kind of package: tube
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IXFT120N25X3HV IXFH(T,Q)120N25X3_HV.pdf
IXFT120N25X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO268HV
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
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IXDN609SI IXDD609CI.pdf
IXDN609SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: tube
Output current: -9...9A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 115ns
Turn-off time: 105ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
Supply voltage: 4.5...35V
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21+4.12 EUR
29+3.01 EUR
31+2.81 EUR
50+2.68 EUR
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300+2.43 EUR
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IXDN609SIA IXDD609CI.pdf
IXDN609SIA
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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53+1.62 EUR
55+1.57 EUR
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IXTH2N300P3HV IXTH(T)2N300P3HV.pdf
IXTH2N300P3HV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 3kV
Drain current: 2A
Power dissipation: 520W
Case: TO247HV
On-state resistance: 21Ω
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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DSA30C60PB DSA30C60PB.pdf
DSA30C60PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.72V
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 327 Stücke:
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44+1.94 EUR
49+1.75 EUR
55+1.55 EUR
61+1.39 EUR
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DSI45-16A DSI45-16A.pdf
DSI45-16A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
Kind of package: tube
auf Bestellung 227 Stücke:
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14+6.38 EUR
17+5.24 EUR
19+4.59 EUR
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DSI45-12A DSI45-12A.pdf
DSI45-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.2kV
Kind of package: tube
auf Bestellung 480 Stücke:
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16+5.65 EUR
20+4.4 EUR
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DSI45-16AR DSI45-16AR.pdf
DSI45-16AR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™
Semiconductor structure: single diode
Case: ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 165W
Max. forward impulse current: 410A
Max. off-state voltage: 1.6kV
Kind of package: tube
auf Bestellung 57 Stücke:
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13+6.64 EUR
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DSEP15-12CR DSEP15-12CR.pdf
DSEP15-12CR
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 110A; ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward voltage: 2.67V
Max. forward impulse current: 110A
Power dissipation: 150W
Max. off-state voltage: 1.2kV
Load current: 15A
Kind of package: tube
Case: ISOPLUS247™
Features of semiconductor devices: fast switching
Technology: HiPerDynFRED
auf Bestellung 4 Stücke:
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4+21.28 EUR
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IXGA12N120A3 IXGA(p,h)12N120A3.pdf
IXGA12N120A3
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Collector current: 12A
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Technology: GenX3™; PT
Type of transistor: IGBT
Kind of package: tube
Gate charge: 20.4nC
Turn-on time: 202ns
Turn-off time: 1545ns
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IXGA12N120A3-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 22A; 100W; D2PAK
Collector current: 22A
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Type of transistor: IGBT
Kind of package: reel; tape
Gate charge: 20.4nC
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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MEK350-02DA PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 200V; If: 356A; Y4-M6; screw
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 0.92V
Max. off-state voltage: 200V
Load current: 356A
Max. forward impulse current: 2.4kA
Produkt ist nicht verfügbar
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IXCP10M45S IXCP10M90S.pdf
IXCP10M45S
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA
auf Bestellung 339 Stücke:
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24+3.63 EUR
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IXCY10M45S IXCP10M90S.pdf
IXCY10M45S
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Case: TO252
Mounting: SMD
Kind of integrated circuit: current regulator
Operating voltage: 450V DC
Type of integrated circuit: driver
Power dissipation: 40W
Operating temperature: -55...150°C
Operating current: 2...100mA
auf Bestellung 24 Stücke:
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20+4.36 EUR
24+3.53 EUR
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IXCY10M45S-TRL 98704.pdf
IXCY10M45S-TRL
Hersteller: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Case: TO252
Mounting: SMD
Kind of integrated circuit: current regulator
Operating voltage: 450V DC
Type of integrated circuit: driver
Power dissipation: 40W
Operating temperature: -55...150°C
Operating current: 2...100mA
Produkt ist nicht verfügbar
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IXBH42N170 IXBH42N170_IXBT42N170.pdf
IXBH42N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXFP20N85X IXFH(P)20N85X.pdf
IXFP20N85X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Mounting: THT
Power dissipation: 540W
Gate charge: 63nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 0.33Ω
Reverse recovery time: 190ns
Produkt ist nicht verfügbar
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CPC1998J cpc1998.pdf
CPC1998J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 150mA; 5000mA; max.240VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 20.88x19.91x5.03mm
Insulation voltage: 2.5kV
Switching method: zero voltage switching
Switched voltage: max. 240V AC
Case: i4-pac
Max. operating current: 5A
Control current max.: 150mA
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
auf Bestellung 24 Stücke:
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AnzahlPrivatkunde
4+25.05 EUR
5+24.29 EUR
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CPC1961G CPC1961.pdf
CPC1961G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP8
Max. operating current: 250mA
Control current max.: 50mA
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
auf Bestellung 206 Stücke:
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11+7.87 EUR
50+5.14 EUR
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CPC1918J CPC1918.pdf
CPC1918J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 25ms
Switched voltage: max. 100V AC; max. 100V DC
Case: ISOPLUS264™
Max. operating current: 5250mA
Turn-off time: 10ms
Control current max.: 100mA
On-state resistance: 0.1Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1983Y CPC1983.pdf
CPC1983Y
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 500mA; max.600VDC; THT; SIP4; OptoMOS; 6Ω; 2.5kV
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 5ms
Switched voltage: max. 600V DC
Case: SIP4
Max. operating current: 0.5A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 6Ω
Type of relay: solid state
Mounting: THT
Relay variant: current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1978J CPC1978.pdf
CPC1978J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 750mA; max.800VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 800V AC; max. 800V DC
Case: i4-pac
Max. operating current: 750mA
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 2.3Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1984Y CPC1984Y.pdf
CPC1984Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 4kV
Turn-on time: 10ms
Switched voltage: max. 600V AC; max. 600V DC
Case: SIP4
Max. operating current: 1A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 0.66Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1977J CPC1977.pdf
CPC1977J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 600V AC; max. 600V DC
Case: i4-pac
Max. operating current: 1.25A
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 1Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
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CPC1979J CPC1979.pdf
CPC1979J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 25ms
Switched voltage: max. 600V AC; max. 600V DC
Case: ISOPLUS264™
Max. operating current: 1.4A
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 0.75Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
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IXFH140N20X3 IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFH140N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
auf Bestellung 63 Stücke:
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AnzahlPrivatkunde
5+18.05 EUR
10+13.29 EUR
Mindestbestellmenge: 5 Stücke
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IXFN140N20P description IXFN140N20P.pdf
IXFN140N20P
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXFR140N20P IXFR140N20P.pdf
IXFR140N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FBE22-06N1 FBE22-06N1.pdf
FBE22-06N1
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 22A
Max. forward impulse current: 50A
Case: ISOPLUS i4-pac™ x024a
Electrical mounting: THT
Kind of package: tube
auf Bestellung 244 Stücke:
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5+18.71 EUR
25+15.57 EUR
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VUE22-06NO7 VUE22-06NO7.pdf
VUE22-06NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 34A; Ifsm: 50A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 34A
Max. forward impulse current: 50A
Version: module
Case: ECO-PAC 1
Electrical mounting: THT
Max. forward voltage: 2.09V
Technology: FRED
Mechanical mounting: screw
auf Bestellung 1 Stücke:
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AnzahlPrivatkunde
1+85.08 EUR
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CMA40E1600HR CMA40E1600HR.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
Max. forward impulse current: 470A
Load current: 40A
Max. off-state voltage: 1.6kV
Max. load current: 63A
Produkt ist nicht verfügbar
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MCMA400PD1600P-PC
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; screw
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Load current: 400A
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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MCMA400PD1600PTSF
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. load current: 630A
Max. forward impulse current: 10kA
Load current: 400A
Produkt ist nicht verfügbar
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CPC3902ZTR CPC3902.pdf
CPC3902ZTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 0.4A
Kind of channel: depletion
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±15V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 2.5Ω
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
23+3.69 EUR
Mindestbestellmenge: 23 Stücke
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DPG60C400QB Littelfuse-Power-Semiconductors-DPG60C400QB-Datasheet?assetguid=3C71B727-26DC-4961-AA47-E6824A25148C
DPG60C400QB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Case: TO3P
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 45ns
Max. forward voltage: 1.41V
Max. forward impulse current: 360A
Load current: 30A x2
Power dissipation: 160W
Max. off-state voltage: 0.4kV
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
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12+7.59 EUR
30+7.13 EUR
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MEA75-12DA PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf MEx75-12DA.pdf
MEA75-12DA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 1.2kV; If: 75A; TO240AA; screw
Case: TO240AA
Kind of package: bulk
Mechanical mounting: screw
Max. forward voltage: 1.85V
Load current: 75A
Max. forward impulse current: 1.2kA
Max. off-state voltage: 1.2kV
Semiconductor structure: common anode; double
Type of semiconductor module: diode
Electrical mounting: screw
auf Bestellung 100 Stücke:
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2+42.61 EUR
3+39.38 EUR
5+37.6 EUR
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MEE75-12DA PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf MEx75-12DA.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Case: TO240AA
Kind of package: bulk
Mechanical mounting: screw
Max. forward voltage: 1.85V
Load current: 75A
Max. forward impulse current: 1.2kA
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Produkt ist nicht verfügbar
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VUO52-16NO1 VUO52-16NO1.pdf
VUO52-16NO1
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 0.83V
Leads: connectors
Leads dimensions: 2x0.5mm
Case: V1-A-Pack
Mechanical mounting: screw
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+47.99 EUR
5+45.98 EUR
10+42.7 EUR
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IXFR140N30P IXFR140N30P.pdf
IXFR140N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™
Mounting: THT
Gate charge: 185nC
On-state resistance: 28mΩ
Polarisation: unipolar
Kind of package: tube
Drain current: 70A
Type of transistor: N-MOSFET
Case: ISOPLUS247™
Drain-source voltage: 300V
Power dissipation: 300W
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFX140N30P IXFK140N30P_IXFX140N30P.pdf
IXFX140N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™
Mounting: THT
Gate charge: 185nC
On-state resistance: 24mΩ
Polarisation: unipolar
Kind of package: tube
Drain current: 140A
Type of transistor: N-MOSFET
Case: PLUS247™
Drain-source voltage: 300V
Power dissipation: 1.04kW
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DPT15I600PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220-2; 28ns
Mounting: THT
Case: TO220-2
Kind of package: tube
Reverse recovery time: 28ns
Load current: 15A
Max. forward impulse current: 150A
Max. off-state voltage: 0.6kV
Technology: FRED
Type of diode: rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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VUO86-16NO7 VUO86-16NO7.pdf
VUO86-16NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 86A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.51V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Produkt ist nicht verfügbar
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VUO36-16NO8 VUO36.pdf
VUO36-16NO8
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 27A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: square
Max. forward voltage: 1.05V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: FO-B
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1+85.08 EUR
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MIXG300PF1700TSF
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 315A
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD255-12N1 MDD255-xxN1-DTE.pdf MDD255-xxN1-DTE.pdf
MDD255-12N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 1.2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
auf Bestellung 12 Stücke:
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1+220.13 EUR
3+199.17 EUR
6+194.67 EUR
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MDD255-16N1 MDD255-xxN1-DTE.pdf
MDD255-16N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Produkt ist nicht verfügbar
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MDD255-22N1 MDD255-xxN1-DTE.pdf
MDD255-22N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Produkt ist nicht verfügbar
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MDD255-20N1 MDD255-xxN1-DTE.pdf
MDD255-20N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Produkt ist nicht verfügbar
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MDD255-18N1 MDD255-18N1.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.8kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Produkt ist nicht verfügbar
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MDD255-14N1 MDD255-14N1.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Produkt ist nicht verfügbar
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IXTP270N04T4 IXTH(P)270N04T4.pdf
IXTP270N04T4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 48ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 59 Stücke:
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18+4.78 EUR
20+4.31 EUR
23+3.81 EUR
50+3.49 EUR
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DSEI60-02A description DSEI60-02A.pdf
DSEI60-02A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; Ifsm: 540A; TO247-2; tube; 150W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 69A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 540A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 0.88V
Power dissipation: 150W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)
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10+8.97 EUR
11+8.08 EUR
13+6.74 EUR
30+6.72 EUR
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DSEI2X61-10B DSEI2X61-10B.pdf
DSEI2X61-10B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw
Case: SOT227B
Kind of package: tube
Type of semiconductor module: diode
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 2.3V
Max. forward impulse current: 540A
Load current: 60A x2
Max. load current: 120A
Max. off-state voltage: 1kV
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+46.95 EUR
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DSEI120-06A DSEI120-06A.pdf
DSEI120-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.12V
Max. forward impulse current: 540A
Load current: 126A
Max. off-state voltage: 0.6kV
Technology: FRED
Produkt ist nicht verfügbar
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