| Anzahl | Privatkunde |
|---|---|
| 60+ | 10.33 EUR |
Artikel auf Bestellung
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Lieferzeit:
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Mindestmenge:
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Technische Details IXFH120N15P Littelfuse
Description: MOSFET N-CH 150V 120A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-247AD (IXFH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V.
Weitere Produktangebote IXFH120N15P nach Preis ab 10 EUR bis 22.87 EUR
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IXFH120N15P | Littelfuse |
 Trans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-247AD |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH120N15P | Ixys Corporation |
Trans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-247AD |
auf Bestellung 207 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH120N15P | Littelfuse Inc. |
Description: MOSFET N-CH 150V 120A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V |
auf Bestellung 1855 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH120N15P | IXYS |
MOSFETs 120 Amps 150V 0.016 Rds |
auf Bestellung 340 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH120N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 120A Power dissipation: 600W Case: TO247-3 On-state resistance: 16mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 207 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXFH120N15P |
|
Hersteller: Littelfuse
Trans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-247AD
Trans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-247AD
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 60+ | 10.4 EUR |
| IXFH120N15P |
|
Hersteller: Ixys Corporation
Trans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-247AD
Trans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-247AD
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 16.05 EUR |
| 12+ | 14.86 EUR |
| IXFH120N15P |
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 150V 120A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Description: MOSFET N-CH 150V 120A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
auf Bestellung 1855 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.12 EUR |
| 30+ | 11.53 EUR |
| 120+ | 10.59 EUR |
| 510+ | 10 EUR |
| IXFH120N15P |
|
Hersteller: IXYS
MOSFETs 120 Amps 150V 0.016 Rds
MOSFETs 120 Amps 150V 0.016 Rds
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.87 EUR |
| 10+ | 13.74 EUR |
| 120+ | 12.52 EUR |
| IXFH120N15P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)