| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
IXTP120P065T | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns Mounting: THT Type of transistor: P-MOSFET Gate-source voltage: ±15V Kind of package: tube Case: TO220AB On-state resistance: 10mΩ Reverse recovery time: 53ns Power dissipation: 298W Gate charge: 185nC Polarisation: unipolar Technology: TrenchP™ Drain current: -120A Kind of channel: enhancement Drain-source voltage: -65V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
IXTQ120N20P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P On-state resistance: 22mΩ Reverse recovery time: 180ns Mounting: THT Power dissipation: 714W Gate charge: 152nC Polarisation: unipolar Technology: PolarHT™ Drain current: 120A Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO3P |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IXTY1N120P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: TO252 Features of semiconductor devices: standard power mosfet Kind of package: tube Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 1A Reverse recovery time: 900ns On-state resistance: 20Ω Power dissipation: 63W |
auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
VBO25-12NO2 | IXYS |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A Version: square Type of bridge rectifier: single-phase Electrical mounting: THT Load current: 38A Max. forward impulse current: 370A Max. off-state voltage: 1.2kV Case: FO-A Kind of package: bulk Leads: connectors FASTON |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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GBO25-12NO1 | IXYS |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A Version: flat Type of bridge rectifier: single-phase Electrical mounting: THT Load current: 25A Max. forward impulse current: 370A Max. off-state voltage: 1.2kV Case: GBFP Kind of package: tube Leads: flat pin |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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VBO25-16AO2 | IXYS |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 38A Max. forward impulse current: 370A Version: square Case: FO-A Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: avalanche breakdown effect Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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GBO25-16NO1 | IXYS |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 25A Max. forward impulse current: 370A Version: flat Case: GBFP Electrical mounting: THT Leads: flat pin Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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VBO25-16NO2 | IXYS |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 38A Max. forward impulse current: 370A Version: square Case: FO-A Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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VBO25-12AO2 | IXYS |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 38A Max. forward impulse current: 370A Version: square Case: FO-A Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk Features of semiconductor devices: avalanche breakdown effect |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXDD609CI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -9...9A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 404 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXDD609SI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 620 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXDD609YI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 807 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXDD609D2TR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V Case: DFN8 Mounting: SMD Output current: -9...9A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Turn-on time: 115ns Kind of package: reel; tape Turn-off time: 105ns Kind of integrated circuit: gate driver; low-side Number of channels: 1 Supply voltage: 4.5...35V |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXDD609SITR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
PLB190 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: THT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 1ms Turn-off time: 2.5ms Operating temperature: -40...85°C |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
PLB190S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 1ms Turn-off time: 2.5ms Operating temperature: -40...85°C |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PLB190STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 1ms Turn-off time: 2.5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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CPC1965Y | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase Type of relay: solid state Mounting: THT Relay variant: 1-phase Body dimensions: 19.2x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 260V AC Case: SIP4 Max. operating current: 1A Control current max.: 100mA |
auf Bestellung 228 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1945Y | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS Type of relay: solid state Max. operating current: 1A Switched voltage: max. 120V AC Manufacturer series: OptoMOS Relay variant: 1-phase On-state resistance: 0.34Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Kind of output: MOSFET Body dimensions: 19.2x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Switching method: zero voltage switching Turn-off time: 3ms Control current max.: 100mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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PD1201 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase Operating temperature: -40...85°C Insulation voltage: 3.75kV Type of relay: solid state Mounting: THT Relay variant: 1-phase Body dimensions: 19.2x6.35x3.3mm Switching method: zero voltage switching Switched voltage: max. 400V AC Case: DIP4 Max. operating current: 1A Control current max.: 100mA |
auf Bestellung 185 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1943G | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase Type of relay: solid state Mounting: THT Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 400V AC Case: DIP6 Max. operating current: 0.5A Control current max.: 100mA |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1943GS | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase Type of relay: solid state Mounting: SMT Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 400V AC Case: DIP6 Max. operating current: 0.5A Control current max.: 100mA |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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LCA210S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 85mA Mounting: SMT Manufacturer series: OptoMOS Switched voltage: max. 350V AC; max. 350V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 3ms Control current max.: 100mA On-state resistance: 35Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
auf Bestellung 93 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1967J | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC Type of relay: solid state Mounting: THT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 19.91x20.88x5.03mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 20ms Switched voltage: max. 400V AC; max. 400V DC Case: i4-pac Max. operating current: 1350mA Turn-off time: 5ms Control current max.: 100mA On-state resistance: 0.85Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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LCA220 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC Type of relay: solid state Contacts configuration: SPDT Max. operating current: 120mA Mounting: THT Manufacturer series: OptoMOS Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 100mA On-state resistance: 20Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
auf Bestellung 82 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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LCA210 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 85mA Mounting: THT Manufacturer series: OptoMOS Switched voltage: max. 350V AC; max. 350V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 3ms Control current max.: 100mA On-state resistance: 35Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH30N60C3D1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 220W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 38nC Kind of package: tube Turn-on time: 45ns Turn-off time: 160ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXXH30N60C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 60A; 270W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 270W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 110A Gate charge: 37nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MCMA35PD1600TB | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk Gate current: 78/200mA Max. forward voltage: 1.22V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: FASTON connectors; screw Load current: 35A Max. load current: 55A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.87V Case: TO240AA Max. forward impulse current: 520A |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MCD26-08IO1B | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk Case: TO240AA Features of semiconductor devices: Kelvin terminal Gate current: 100/200mA Max. forward voltage: 1.27V Type of semiconductor module: diode-thyristor Mechanical mounting: screw Max. off-state voltage: 0.8kV Electrical mounting: FASTON connectors; screw Load current: 27A Max. load current: 42A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.85V Max. forward impulse current: 520A |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MCD95-16IO1B | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: FASTON connectors; screw Load current: 116A Max. load current: 180A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.85V Case: TO240AA Max. forward impulse current: 2.25kA Gate current: 150/200mA Max. forward voltage: 1.28V |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MCD56-08IO1B | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk Case: TO240AA Features of semiconductor devices: Kelvin terminal Gate current: 100/200mA Max. forward voltage: 1.24V Type of semiconductor module: diode-thyristor Mechanical mounting: screw Max. off-state voltage: 0.8kV Electrical mounting: FASTON connectors; screw Load current: 60A Max. load current: 100A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.85V Max. forward impulse current: 1.5kA |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MCD72-12IO1B | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk Case: TO240AA Features of semiconductor devices: Kelvin terminal Gate current: 150/200mA Max. forward voltage: 1.34V Type of semiconductor module: diode-thyristor Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Load current: 85A Max. load current: 133A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.85V Max. forward impulse current: 1.7kA |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MCD162-16io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Max. forward impulse current: 6kA Gate current: 150/200mA Max. forward voltage: 1.03V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: FASTON connectors; screw Load current: 181A Max. load current: 300A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.88V Case: Y4-M6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DSA1-18D | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.8kV; 2.3A; Ifsm: 110A; FP-Case; tube Type of diode: rectifying Max. off-state voltage: 1.8kV Load current: 2.3A Semiconductor structure: single diode Case: FP-Case Mounting: THT Max. forward voltage: 1.34V Max. forward impulse current: 110A Features of semiconductor devices: avalanche breakdown effect Kind of package: tube |
auf Bestellung 384 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN55N50 | IXYS |
Category: Transistor modulesDescription: Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 55A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 80mΩ Pulsed drain current: 220A Power dissipation: 625W Technology: HiPerFET™ Kind of channel: enhancement Gate charge: 330nC Reverse recovery time: 250ns Gate-source voltage: ±40V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CPC1020N | IXYS |
Category: DC Solid State RelaysDescription: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω Case: SOP4 On-state resistance: 0.25Ω Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 1.5kV Turn-on time: 3ms Switched voltage: max. 30V AC; max. 30V DC Max. operating current: 1.2A Turn-off time: 3ms Control current max.: 50mA Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: current source Kind of output: MOSFET |
auf Bestellung 1084 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1020NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 1.2A Switched voltage: max. 30V AC; max. 30V DC Manufacturer series: OptoMOS Relay variant: current source On-state resistance: 0.25Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CLA100E1200TZ-TUB | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 40mA; D3PAK,TO268AA; SMD Mounting: SMD Case: D3PAK; TO268AA Type of thyristor: thyristor Gate current: 40mA Max. off-state voltage: 1.2kV Load current: 100A Max. load current: 160A Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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VHFD37-16IO1 | IXYS |
Category: Single phase controlled bridge rectif.Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw Leads dimensions: 2x0.5mm Case: V1-A-Pack Type of bridge rectifier: half-controlled Max. forward impulse current: 280A Gate current: 50/80mA Version: module Features of semiconductor devices: field diodes; freewheelling diode Mechanical mounting: screw Leads: connectors Max. off-state voltage: 1.6kV Electrical mounting: FASTON connectors Load current: 40A |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MG12100S-BN2MM | IXYS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of semiconductor module: IGBT Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 200A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Semiconductor structure: transistor/transistor Case: package S Gate-emitter voltage: ±20V Collector current: 100A Topology: IGBT half-bridge |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MG12150W-XN2MM | IXYS |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 300A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Semiconductor structure: transistor/transistor Case: package W Gate-emitter voltage: ±20V Collector current: 150A Topology: IGBT three-phase bridge; NTC thermistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MG12200D-BN2MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of semiconductor module: IGBT Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 400A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Semiconductor structure: transistor/transistor Case: Y3-DCB Gate-emitter voltage: ±20V Collector current: 200A Topology: IGBT half-bridge |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MG12300D-BN2MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: Y3-DCB Type of semiconductor module: IGBT Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 600A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Topology: IGBT half-bridge |
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|
DSEC240-04A | IXYS |
Category: Diode modulesDescription: Module: diode; double,common cathode; 400V; If: 120Ax2; SOT227UI Kind of package: tube Max. forward voltage: 1V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 0.4kV Electrical mounting: screw Load current: 120A x2 Semiconductor structure: common cathode; double Case: SOT227UI Max. forward impulse current: 2kA |
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|
DSA320A100NB | IXYS |
Category: Diode modules Description: Module: diode; double x2,common anode; 100V; 80Ax4; SOT227B; screw Max. forward voltage: 0.77V Type of semiconductor module: diode Features of semiconductor devices: Schottky Mechanical mounting: screw Max. off-state voltage: 0.1kV Electrical mounting: screw Load current: 80A x4 Kind of package: tube Semiconductor structure: common anode; double x2 Case: SOT227B |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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|
IXFR102N30P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™ Power dissipation: 250W Gate charge: 224nC Polarisation: unipolar Drain current: 60A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Kind of package: tube Case: ISOPLUS247™ On-state resistance: 36mΩ Mounting: THT |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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|
IXFK120N20P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns Mounting: THT Power dissipation: 714W Gate charge: 152nC Polarisation: unipolar Drain current: 120A Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Kind of package: tube Case: TO264 On-state resistance: 22mΩ Reverse recovery time: 100ns |
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|
IXFK120N25P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264 Mounting: THT Power dissipation: 700W Gate charge: 185nC Polarisation: unipolar Drain current: 120A Kind of channel: enhancement Drain-source voltage: 250V Type of transistor: N-MOSFET Kind of package: tube Case: TO264 On-state resistance: 24mΩ |
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|
IXFK120N30P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264 Mounting: THT Power dissipation: 1.13kW Gate charge: 150nC Polarisation: unipolar Drain current: 120A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Kind of package: tube Case: TO264 On-state resistance: 27mΩ |
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|
LAA110S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
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|
IXBH20N300 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3 Mounting: THT Collector-emitter voltage: 3kV Power dissipation: 250W Gate charge: 105nC Technology: BiMOSFET™ Features of semiconductor devices: high voltage Pulsed collector current: 130A Type of transistor: IGBT Turn-on time: 64ns Kind of package: tube Case: TO247-3 Turn-off time: 0.3µs Gate-emitter voltage: ±20V Collector current: 50A |
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| IXBH20N360HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 3.6kV; 70A; 430W; TO247HV Mounting: THT Collector-emitter voltage: 3.6kV Power dissipation: 430W Gate charge: 110nC Pulsed collector current: 220A Type of transistor: IGBT Kind of package: tube Case: TO247HV Gate-emitter voltage: ±20V Collector current: 70A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
MCMA140P1600TA | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.6kV; 140A; TO240AA; screw Case: TO240AA Max. off-state voltage: 1.6kV Load current: 140A Semiconductor structure: double series Max. forward voltage: 1.28V Kind of package: bulk Max. forward impulse current: 2.04kA Gate current: 150/200mA Type of semiconductor module: thyristor Mechanical mounting: screw Electrical mounting: screw |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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| MCMA140P1600TA-NI | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.6kV; 140A; Ifmax: 220A; TO240AA Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 140A Max. load current: 220A Case: TO240AA Max. forward voltage: 1.28V Max. forward impulse current: 2.04kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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|
IXTQ22N60P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 400W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs |
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|
IXFQ22N60P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 500W Case: TO3P On-state resistance: 390mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
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|
IXFH12N80P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 12A Power dissipation: 360W Case: TO247-3 On-state resistance: 0.85Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 51nC |
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|
IXTP15P15T | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -15A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 0.24Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: TrenchP™ Gate charge: 48nC Reverse recovery time: 116ns |
auf Bestellung 130 Stücke: Lieferzeit 14-21 Tag (e) |
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|
CPC1540G | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 2ms Turn-off time: 2ms Control current max.: 50mA Kind of output: MOSFET |
auf Bestellung 965 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXTP120P065T |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Mounting: THT
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO220AB
On-state resistance: 10mΩ
Reverse recovery time: 53ns
Power dissipation: 298W
Gate charge: 185nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -65V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Mounting: THT
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO220AB
On-state resistance: 10mΩ
Reverse recovery time: 53ns
Power dissipation: 298W
Gate charge: 185nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -65V
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| IXTQ120N20P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
On-state resistance: 22mΩ
Reverse recovery time: 180ns
Mounting: THT
Power dissipation: 714W
Gate charge: 152nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
On-state resistance: 22mΩ
Reverse recovery time: 180ns
Mounting: THT
Power dissipation: 714W
Gate charge: 152nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTY1N120P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: TO252
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Reverse recovery time: 900ns
On-state resistance: 20Ω
Power dissipation: 63W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: TO252
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Reverse recovery time: 900ns
On-state resistance: 20Ω
Power dissipation: 63W
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
| VBO25-12NO2 |
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Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 38A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: FO-A
Kind of package: bulk
Leads: connectors FASTON
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 38A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: FO-A
Kind of package: bulk
Leads: connectors FASTON
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| GBO25-12NO1 |
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Hersteller: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: GBFP
Kind of package: tube
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: GBFP
Kind of package: tube
Leads: flat pin
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
| VBO25-16AO2 |
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Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: avalanche breakdown effect
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: avalanche breakdown effect
Kind of package: bulk
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| GBO25-16NO1 |
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Hersteller: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
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| VBO25-16NO2 |
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Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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| VBO25-12AO2 |
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Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
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| IXDD609CI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 404 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDD609SI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 620 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDD609YI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 807 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDD609D2TR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Case: DFN8
Mounting: SMD
Output current: -9...9A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 115ns
Kind of package: reel; tape
Turn-off time: 105ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Case: DFN8
Mounting: SMD
Output current: -9...9A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 115ns
Kind of package: reel; tape
Turn-off time: 105ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
Supply voltage: 4.5...35V
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDD609SITR |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| PLB190 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
| PLB190S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| PLB190STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| CPC1965Y |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 260V AC
Case: SIP4
Max. operating current: 1A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 260V AC
Case: SIP4
Max. operating current: 1A
Control current max.: 100mA
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1945Y |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Type of relay: solid state
Max. operating current: 1A
Switched voltage: max. 120V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 0.34Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switching method: zero voltage switching
Turn-off time: 3ms
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Type of relay: solid state
Max. operating current: 1A
Switched voltage: max. 120V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 0.34Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switching method: zero voltage switching
Turn-off time: 3ms
Control current max.: 100mA
Produkt ist nicht verfügbar
Im Einkaufswagen
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| PD1201 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP4
Max. operating current: 1A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP4
Max. operating current: 1A
Control current max.: 100mA
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1943G |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1943GS |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| LCA210S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1967J |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 400V AC; max. 400V DC
Case: i4-pac
Max. operating current: 1350mA
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 0.85Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 400V AC; max. 400V DC
Case: i4-pac
Max. operating current: 1350mA
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 0.85Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
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| LCA220 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
| LCA210 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
| IXGH30N60C3D1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 220W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 160ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 220W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 160ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXXH30N60C3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 110A
Gate charge: 37nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 110A
Gate charge: 37nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| MCMA35PD1600TB |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Gate current: 78/200mA
Max. forward voltage: 1.22V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 35A
Max. load current: 55A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.87V
Case: TO240AA
Max. forward impulse current: 520A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Gate current: 78/200mA
Max. forward voltage: 1.22V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 35A
Max. load current: 55A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.87V
Case: TO240AA
Max. forward impulse current: 520A
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
| MCD26-08IO1B |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Max. forward voltage: 1.27V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 27A
Max. load current: 42A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Max. forward impulse current: 520A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Max. forward voltage: 1.27V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 27A
Max. load current: 42A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Max. forward impulse current: 520A
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| MCD95-16IO1B |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 116A
Max. load current: 180A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Max. forward voltage: 1.28V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 116A
Max. load current: 180A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Max. forward voltage: 1.28V
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
| MCD56-08IO1B |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Case: TO240AA
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Max. forward voltage: 1.24V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 60A
Max. load current: 100A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Max. forward impulse current: 1.5kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Case: TO240AA
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Max. forward voltage: 1.24V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 60A
Max. load current: 100A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Max. forward impulse current: 1.5kA
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| MCD72-12IO1B |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Max. forward voltage: 1.34V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 85A
Max. load current: 133A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Max. forward impulse current: 1.7kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Max. forward voltage: 1.34V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 85A
Max. load current: 133A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Max. forward impulse current: 1.7kA
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| MCD162-16io1 |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
Produkt ist nicht verfügbar
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| DSA1-18D |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; Ifsm: 110A; FP-Case; tube
Type of diode: rectifying
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Case: FP-Case
Mounting: THT
Max. forward voltage: 1.34V
Max. forward impulse current: 110A
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; Ifsm: 110A; FP-Case; tube
Type of diode: rectifying
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Case: FP-Case
Mounting: THT
Max. forward voltage: 1.34V
Max. forward impulse current: 110A
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
auf Bestellung 384 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFN55N50 |
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Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 55A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Pulsed drain current: 220A
Power dissipation: 625W
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 330nC
Reverse recovery time: 250ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 55A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Pulsed drain current: 220A
Power dissipation: 625W
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 330nC
Reverse recovery time: 250ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| CPC1020N |
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Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Case: SOP4
On-state resistance: 0.25Ω
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 30V AC; max. 30V DC
Max. operating current: 1.2A
Turn-off time: 3ms
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Case: SOP4
On-state resistance: 0.25Ω
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 30V AC; max. 30V DC
Max. operating current: 1.2A
Turn-off time: 3ms
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
auf Bestellung 1084 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1020NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| CLA100E1200TZ-TUB |
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Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 40mA; D3PAK,TO268AA; SMD
Mounting: SMD
Case: D3PAK; TO268AA
Type of thyristor: thyristor
Gate current: 40mA
Max. off-state voltage: 1.2kV
Load current: 100A
Max. load current: 160A
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 40mA; D3PAK,TO268AA; SMD
Mounting: SMD
Case: D3PAK; TO268AA
Type of thyristor: thyristor
Gate current: 40mA
Max. off-state voltage: 1.2kV
Load current: 100A
Max. load current: 160A
Kind of package: tube
Produkt ist nicht verfügbar
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| VHFD37-16IO1 |
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Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Leads dimensions: 2x0.5mm
Case: V1-A-Pack
Type of bridge rectifier: half-controlled
Max. forward impulse current: 280A
Gate current: 50/80mA
Version: module
Features of semiconductor devices: field diodes; freewheelling diode
Mechanical mounting: screw
Leads: connectors
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors
Load current: 40A
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Leads dimensions: 2x0.5mm
Case: V1-A-Pack
Type of bridge rectifier: half-controlled
Max. forward impulse current: 280A
Gate current: 50/80mA
Version: module
Features of semiconductor devices: field diodes; freewheelling diode
Mechanical mounting: screw
Leads: connectors
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors
Load current: 40A
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| MG12100S-BN2MM |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: package S
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: package S
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: IGBT half-bridge
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| MG12150W-XN2MM |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Case: package W
Gate-emitter voltage: ±20V
Collector current: 150A
Topology: IGBT three-phase bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Case: package W
Gate-emitter voltage: ±20V
Collector current: 150A
Topology: IGBT three-phase bridge; NTC thermistor
Produkt ist nicht verfügbar
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| MG12200D-BN2MM |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: Y3-DCB
Gate-emitter voltage: ±20V
Collector current: 200A
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: Y3-DCB
Gate-emitter voltage: ±20V
Collector current: 200A
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
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| MG12300D-BN2MM |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Type of semiconductor module: IGBT
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Type of semiconductor module: IGBT
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: IGBT half-bridge
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| DSEC240-04A |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 120Ax2; SOT227UI
Kind of package: tube
Max. forward voltage: 1V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.4kV
Electrical mounting: screw
Load current: 120A x2
Semiconductor structure: common cathode; double
Case: SOT227UI
Max. forward impulse current: 2kA
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 120Ax2; SOT227UI
Kind of package: tube
Max. forward voltage: 1V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.4kV
Electrical mounting: screw
Load current: 120A x2
Semiconductor structure: common cathode; double
Case: SOT227UI
Max. forward impulse current: 2kA
Produkt ist nicht verfügbar
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| DSA320A100NB |
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double x2,common anode; 100V; 80Ax4; SOT227B; screw
Max. forward voltage: 0.77V
Type of semiconductor module: diode
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Max. off-state voltage: 0.1kV
Electrical mounting: screw
Load current: 80A x4
Kind of package: tube
Semiconductor structure: common anode; double x2
Case: SOT227B
Category: Diode modules
Description: Module: diode; double x2,common anode; 100V; 80Ax4; SOT227B; screw
Max. forward voltage: 0.77V
Type of semiconductor module: diode
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Max. off-state voltage: 0.1kV
Electrical mounting: screw
Load current: 80A x4
Kind of package: tube
Semiconductor structure: common anode; double x2
Case: SOT227B
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFR102N30P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Power dissipation: 250W
Gate charge: 224nC
Polarisation: unipolar
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: ISOPLUS247™
On-state resistance: 36mΩ
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Power dissipation: 250W
Gate charge: 224nC
Polarisation: unipolar
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: ISOPLUS247™
On-state resistance: 36mΩ
Mounting: THT
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFK120N20P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Mounting: THT
Power dissipation: 714W
Gate charge: 152nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 22mΩ
Reverse recovery time: 100ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Mounting: THT
Power dissipation: 714W
Gate charge: 152nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 22mΩ
Reverse recovery time: 100ns
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| IXFK120N25P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Mounting: THT
Power dissipation: 700W
Gate charge: 185nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 24mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Mounting: THT
Power dissipation: 700W
Gate charge: 185nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 24mΩ
Produkt ist nicht verfügbar
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| IXFK120N30P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Mounting: THT
Power dissipation: 1.13kW
Gate charge: 150nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 27mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Mounting: THT
Power dissipation: 1.13kW
Gate charge: 150nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 27mΩ
Produkt ist nicht verfügbar
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| LAA110S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
| IXBH20N300 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Collector-emitter voltage: 3kV
Power dissipation: 250W
Gate charge: 105nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 130A
Type of transistor: IGBT
Turn-on time: 64ns
Kind of package: tube
Case: TO247-3
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Collector-emitter voltage: 3kV
Power dissipation: 250W
Gate charge: 105nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 130A
Type of transistor: IGBT
Turn-on time: 64ns
Kind of package: tube
Case: TO247-3
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
Produkt ist nicht verfügbar
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| IXBH20N360HV |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 3.6kV; 70A; 430W; TO247HV
Mounting: THT
Collector-emitter voltage: 3.6kV
Power dissipation: 430W
Gate charge: 110nC
Pulsed collector current: 220A
Type of transistor: IGBT
Kind of package: tube
Case: TO247HV
Gate-emitter voltage: ±20V
Collector current: 70A
Category: THT IGBT transistors
Description: Transistor: IGBT; 3.6kV; 70A; 430W; TO247HV
Mounting: THT
Collector-emitter voltage: 3.6kV
Power dissipation: 430W
Gate charge: 110nC
Pulsed collector current: 220A
Type of transistor: IGBT
Kind of package: tube
Case: TO247HV
Gate-emitter voltage: ±20V
Collector current: 70A
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| MCMA140P1600TA |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; TO240AA; screw
Case: TO240AA
Max. off-state voltage: 1.6kV
Load current: 140A
Semiconductor structure: double series
Max. forward voltage: 1.28V
Kind of package: bulk
Max. forward impulse current: 2.04kA
Gate current: 150/200mA
Type of semiconductor module: thyristor
Mechanical mounting: screw
Electrical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; TO240AA; screw
Case: TO240AA
Max. off-state voltage: 1.6kV
Load current: 140A
Semiconductor structure: double series
Max. forward voltage: 1.28V
Kind of package: bulk
Max. forward impulse current: 2.04kA
Gate current: 150/200mA
Type of semiconductor module: thyristor
Mechanical mounting: screw
Electrical mounting: screw
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| MCMA140P1600TA-NI |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; Ifmax: 220A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Max. load current: 220A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; Ifmax: 220A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Max. load current: 220A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
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| IXTQ22N60P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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| IXFQ22N60P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO3P
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO3P
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| IXFH12N80P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Produkt ist nicht verfügbar
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| IXTP15P15T |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Gate charge: 48nC
Reverse recovery time: 116ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Gate charge: 48nC
Reverse recovery time: 116ns
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1540G |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Control current max.: 50mA
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Control current max.: 50mA
Kind of output: MOSFET
auf Bestellung 965 Stücke:
Lieferzeit 14-21 Tag (e)












































