Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXFN100N50P | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
IXFN100N50Q3 | IXYS | IXFN100N50Q3 Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
IXFN100N65X2 | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
IXFN102N30P | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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IXFN110N60P3 | IXYS |
![]() Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A Polarisation: unipolar Drain-source voltage: 600V Drain current: 90A Pulsed drain current: 275A Power dissipation: 1.5kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 56mΩ Gate charge: 254nC Kind of channel: enhancement Electrical mounting: screw Mechanical mounting: screw Technology: HiPerFET™; Polar3™ Semiconductor structure: single transistor Type of semiconductor module: MOSFET transistor Reverse recovery time: 250ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXFN110N85X | IXYS |
![]() Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 850V Drain current: 110A Power dissipation: 1170W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 33mΩ Kind of channel: enhancement Semiconductor structure: single transistor Reverse recovery time: 205ns Electrical mounting: screw Mechanical mounting: screw Gate charge: 425nC Pulsed drain current: 220A Type of semiconductor module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN120N65X2 | IXYS |
![]() Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 650V Drain current: 108A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 24mΩ Pulsed drain current: 240A Power dissipation: 890W Technology: HiPerFET™; X2-Class Gate-source voltage: ±40V Mechanical mounting: screw Reverse recovery time: 220ns Gate charge: 240nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN130N90SK | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 900V Drain current: 109A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 10mΩ Technology: SiC Kind of channel: enhancement Gate charge: 68nC Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
IXFN132N50P3 | IXYS | IXFN132N50P3 Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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IXFN140N20P | IXYS |
![]() ![]() Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A Polarisation: unipolar Drain-source voltage: 200V Drain current: 115A Pulsed drain current: 280A Power dissipation: 680W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 18mΩ Gate charge: 240nC Kind of channel: enhancement Mechanical mounting: screw Type of module: MOSFET transistor Technology: HiPerFET™; Polar™ Semiconductor structure: single transistor Reverse recovery time: 150ns Electrical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
IXFN140N25T | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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IXFN140N30P | IXYS |
![]() ![]() Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A Polarisation: unipolar Power dissipation: 700W On-state resistance: 24mΩ Drain current: 110A Drain-source voltage: 300V Reverse recovery time: 200ns Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Gate charge: 185nC Case: SOT227B Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 300A Type of semiconductor module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXFN150N65X2 | IXYS |
![]() Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A Power dissipation: 1.04kW Case: SOT227B Gate charge: 355nC Electrical mounting: screw Mechanical mounting: screw Technology: HiPerFET™; X2-Class Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 300A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Reverse recovery time: 190ns Drain-source voltage: 650V Drain current: 145A On-state resistance: 17mΩ Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN160N30T | IXYS | IXFN160N30T Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
IXFN170N25X3 | IXYS |
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auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN170N30P | IXYS |
![]() Description: Module; single transistor; 300V; 138A; SOT227B; screw; Idm: 500A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 138A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 18mΩ Pulsed drain current: 500A Power dissipation: 890W Technology: HiPerFET™; Polar™ Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 200ns Gate charge: 258nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 82 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN170N65X2 | IXYS |
![]() Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 170A Pulsed drain current: 340A Power dissipation: 1170W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 13mΩ Gate charge: 434nC Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Reverse recovery time: 270ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXFN180N15P | IXYS |
![]() ![]() Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 150V Drain current: 150A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 11mΩ Pulsed drain current: 380A Power dissipation: 680W Technology: HiPerFET™; PolarHT™ Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 200ns Gate charge: 240nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN180N25T | IXYS |
![]() Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 250V Drain current: 168A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 12.9mΩ Pulsed drain current: 500A Power dissipation: 900W Technology: GigaMOS™ Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 200ns Gate charge: 364nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN200N10P | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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IXFN20N120P | IXYS |
![]() Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 20A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 570mΩ Pulsed drain current: 50A Power dissipation: 595W Technology: HiPerFET™; Polar™ Gate-source voltage: ±40V Mechanical mounting: screw Reverse recovery time: 300ns Gate charge: 193nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN210N20P | IXYS | IXFN210N20P Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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IXFN210N30P3 | IXYS |
![]() Description: Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 192A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 14.5mΩ Pulsed drain current: 550A Power dissipation: 1.5kW Technology: HiPerFET™; Polar3™ Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 250ns Gate charge: 268nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN210N30X3 | IXYS | IXFN210N30X3 Transistor modules MOSFET |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN220N20X3 | IXYS |
![]() ![]() Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 160A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 6.2mΩ Pulsed drain current: 500A Power dissipation: 390W Technology: HiPerFET™; X3-Class Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 128ns Gate charge: 204nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN230N20T | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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IXFN240N15T2 | IXYS |
![]() Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 150V Drain current: 240A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 5.2mΩ Pulsed drain current: 600A Power dissipation: 830W Technology: GigaMOS™; HiPerFET™; TrenchT2™ Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 140ns Gate charge: 460nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN240N25X3 | IXYS | IXFN240N25X3 Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
IXFN24N100 | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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IXFN26N100P | IXYS |
![]() Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 23A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 390mΩ Pulsed drain current: 65A Power dissipation: 595W Technology: HiPerFET™; Polar™ Gate-source voltage: ±40V Mechanical mounting: screw Reverse recovery time: 300ns Gate charge: 197nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN26N120P | IXYS |
![]() Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 23A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.5Ω Pulsed drain current: 60A Power dissipation: 695W Technology: HiPerFET™; Polar™ Gate-source voltage: ±40V Mechanical mounting: screw Reverse recovery time: 300ns Gate charge: 255nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN27N120SK | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 21.5A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 80mΩ Technology: SiC Kind of channel: enhancement Gate charge: 160nC Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
IXFN300N10P | IXYS | IXFN300N10P Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
IXFN300N20X3 | IXYS | IXFN300N20X3 Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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IXFN30N120P | IXYS |
![]() Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 75A Power dissipation: 890W Case: SOT227B On-state resistance: 0.35Ω Gate charge: 310nC Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Reverse recovery time: 300ns Kind of channel: enhancement Gate-source voltage: ±40V Semiconductor structure: single transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
IXFN320N17T2 | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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IXFN32N100P | IXYS |
![]() Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 27A Pulsed drain current: 75A Power dissipation: 690W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.32Ω Gate charge: 225nC Kind of channel: enhancement Mechanical mounting: screw Type of module: MOSFET transistor Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXFN32N100Q3 | IXYS |
![]() Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 28A Pulsed drain current: 96A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.32Ω Gate charge: 195nC Kind of channel: enhancement Mechanical mounting: screw Type of module: MOSFET transistor Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
IXFN32N120P | IXYS | IXFN32N120P Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
IXFN32N80P | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
IXFN340N07 | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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IXFN360N10T | IXYS |
![]() Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A Polarisation: unipolar Drain-source voltage: 100V Drain current: 360A Pulsed drain current: 900A Power dissipation: 830W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 2.6mΩ Gate charge: 525nC Kind of channel: enhancement Electrical mounting: screw Technology: GigaMOS™; HiPerFET™ Reverse recovery time: 130ns Semiconductor structure: single transistor Mechanical mounting: screw Type of semiconductor module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
auf Bestellung 243 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN360N15T2 | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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IXFN36N100 | IXYS |
![]() ![]() Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 36A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.24Ω Pulsed drain current: 144A Power dissipation: 694W Technology: HiPerFET™ Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 180ns Gate charge: 380nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN38N100P | IXYS | IXFN38N100P Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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IXFN400N15X3 | IXYS |
![]() Description: Module; single transistor; 150V; 400A; SOT227B; screw; Idm: 900A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 150V Drain current: 400A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 2.5mΩ Pulsed drain current: 900A Power dissipation: 695W Technology: HiPerFET™; X3-Class Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 132ns Gate charge: 365nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN40N110P | IXYS |
![]() Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.1kV Drain current: 34A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.26Ω Pulsed drain current: 100A Power dissipation: 890W Technology: HiPerFET™; Polar™ Gate-source voltage: ±40V Mechanical mounting: screw Kind of channel: enhancement Reverse recovery time: 300ns Gate charge: 310nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN40N110Q3 | IXYS |
![]() Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.1kV Drain current: 35A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.26Ω Pulsed drain current: 100A Power dissipation: 960W Technology: HiPerFET™; Q3-Class Gate-source voltage: ±40V Mechanical mounting: screw Reverse recovery time: 434ns Gate charge: 300nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN40N90P | IXYS | IXFN40N90P Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
IXFN420N10T | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
IXFN44N100P | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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IXFN44N100Q3 | IXYS |
![]() Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 38A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.22Ω Pulsed drain current: 110A Power dissipation: 960W Technology: HiPerFET™; Q3-Class Gate-source voltage: ±40V Mechanical mounting: screw Reverse recovery time: 300ns Gate charge: 264nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN44N80P | IXYS |
![]() ![]() Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 39A Pulsed drain current: 100A Power dissipation: 694W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 0.19Ω Gate charge: 200nC Kind of channel: enhancement Mechanical mounting: screw Electrical mounting: screw Reverse recovery time: 250ns Semiconductor structure: single transistor Type of semiconductor module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN44N80Q3 | IXYS |
![]() Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 800V Drain current: 37A Pulsed drain current: 130A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.19Ω Gate charge: 185nC Kind of channel: enhancement Mechanical mounting: screw Electrical mounting: screw Reverse recovery time: 300ns Semiconductor structure: single transistor Type of semiconductor module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXFN48N60P | IXYS |
![]() ![]() Description: Module; single transistor; 600V; 40A; SOT227B; screw; Idm: 110A Polarisation: unipolar Drain-source voltage: 600V Drain current: 40A Power dissipation: 625W Case: SOT227B On-state resistance: 0.14Ω Gate charge: 150nC Kind of channel: enhancement Reverse recovery time: 200ns Pulsed drain current: 110A Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: HiPerFET™; PolarHV™ Gate-source voltage: ±40V Semiconductor structure: single transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
IXFN50N120SIC | IXYS |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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IXFN50N120SK | IXYS |
![]() Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 48A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 50mΩ Technology: SiC Gate-source voltage: -5...20V Mechanical mounting: screw Reverse recovery time: 54ns Features of semiconductor devices: Kelvin terminal Gate charge: 115nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN520N075T2 | IXYS |
![]() Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 75V Drain current: 480A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 1.9mΩ Pulsed drain current: 1.5kA Power dissipation: 940W Technology: GigaMOS™; HiPerFET™; TrenchT2™ Kind of channel: enhancement Gate charge: 545nC Reverse recovery time: 150ns Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXFN52N100X | IXYS |
![]() Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 44A Pulsed drain current: 100A Power dissipation: 830W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.125Ω Gate charge: 245nC Kind of channel: enhancement Mechanical mounting: screw Type of module: MOSFET transistor Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 260ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IXFN52N90P | IXYS |
![]() Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A Power dissipation: 890W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Gate charge: 308nC Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate-source voltage: ±40V Pulsed drain current: 104A Type of semiconductor module: MOSFET transistor Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 900V Drain current: 43A On-state resistance: 0.16Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IXFN100N50P | ![]() |
Hersteller: IXYS
IXFN100N50P Transistor modules MOSFET
IXFN100N50P Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFN100N50Q3 |
Hersteller: IXYS
IXFN100N50Q3 Transistor modules MOSFET
IXFN100N50Q3 Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFN100N65X2 |
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Hersteller: IXYS
IXFN100N65X2 Transistor modules MOSFET
IXFN100N65X2 Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN102N30P |
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Hersteller: IXYS
IXFN102N30P Transistor modules MOSFET
IXFN102N30P Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN110N60P3 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Pulsed drain current: 275A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Gate charge: 254nC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Technology: HiPerFET™; Polar3™
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Pulsed drain current: 275A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Gate charge: 254nC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Technology: HiPerFET™; Polar3™
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN110N85X |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 110A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 33mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 205ns
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 425nC
Pulsed drain current: 220A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 110A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 33mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 205ns
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 425nC
Pulsed drain current: 220A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 92.44 EUR |
IXFN120N65X2 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 108A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 24mΩ
Pulsed drain current: 240A
Power dissipation: 890W
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 220ns
Gate charge: 240nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 108A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 24mΩ
Pulsed drain current: 240A
Power dissipation: 890W
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 220ns
Gate charge: 240nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
100+ | 49.99 EUR |
IXFN130N90SK |
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 900V
Drain current: 109A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 68nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 900V
Drain current: 109A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 68nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN132N50P3 |
Hersteller: IXYS
IXFN132N50P3 Transistor modules MOSFET
IXFN132N50P3 Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN140N20P | ![]() |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; Polar™
Semiconductor structure: single transistor
Reverse recovery time: 150ns
Electrical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; Polar™
Semiconductor structure: single transistor
Reverse recovery time: 150ns
Electrical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN140N25T |
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Hersteller: IXYS
IXFN140N25T Transistor modules MOSFET
IXFN140N25T Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN140N30P | ![]() |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Polarisation: unipolar
Power dissipation: 700W
On-state resistance: 24mΩ
Drain current: 110A
Drain-source voltage: 300V
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 185nC
Case: SOT227B
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 300A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Polarisation: unipolar
Power dissipation: 700W
On-state resistance: 24mΩ
Drain current: 110A
Drain-source voltage: 300V
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 185nC
Case: SOT227B
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 300A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN150N65X2 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A
Power dissipation: 1.04kW
Case: SOT227B
Gate charge: 355nC
Electrical mounting: screw
Mechanical mounting: screw
Technology: HiPerFET™; X2-Class
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Reverse recovery time: 190ns
Drain-source voltage: 650V
Drain current: 145A
On-state resistance: 17mΩ
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A
Power dissipation: 1.04kW
Case: SOT227B
Gate charge: 355nC
Electrical mounting: screw
Mechanical mounting: screw
Technology: HiPerFET™; X2-Class
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Reverse recovery time: 190ns
Drain-source voltage: 650V
Drain current: 145A
On-state resistance: 17mΩ
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 62.99 EUR |
IXFN160N30T |
Hersteller: IXYS
IXFN160N30T Transistor modules MOSFET
IXFN160N30T Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN170N25X3 |
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Hersteller: IXYS
IXFN170N25X3 Transistor modules MOSFET
IXFN170N25X3 Transistor modules MOSFET
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
IXFN170N30P |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 138A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 138A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 18mΩ
Pulsed drain current: 500A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 258nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 138A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 138A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 18mΩ
Pulsed drain current: 500A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 258nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 82 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 46.58 EUR |
IXFN170N65X2 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 13mΩ
Gate charge: 434nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 270ns
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 13mΩ
Gate charge: 434nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 270ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN180N15P | ![]() |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 150A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 11mΩ
Pulsed drain current: 380A
Power dissipation: 680W
Technology: HiPerFET™; PolarHT™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 240nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 150A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 11mΩ
Pulsed drain current: 380A
Power dissipation: 680W
Technology: HiPerFET™; PolarHT™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 240nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
50+ | 27.06 EUR |
100+ | 26.03 EUR |
IXFN180N25T |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 364nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 364nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 31.09 EUR |
IXFN200N10P | ![]() |
Hersteller: IXYS
IXFN200N10P Transistor modules MOSFET
IXFN200N10P Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN20N120P |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 20A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 570mΩ
Pulsed drain current: 50A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 193nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 20A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 570mΩ
Pulsed drain current: 50A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 193nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 18.90 EUR |
IXFN210N20P |
Hersteller: IXYS
IXFN210N20P Transistor modules MOSFET
IXFN210N20P Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN210N30P3 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 192A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14.5mΩ
Pulsed drain current: 550A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar3™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 268nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 192A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14.5mΩ
Pulsed drain current: 550A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar3™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 268nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
10+ | 43.44 EUR |
IXFN210N30X3 |
Hersteller: IXYS
IXFN210N30X3 Transistor modules MOSFET
IXFN210N30X3 Transistor modules MOSFET
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
30+ | 50.05 EUR |
IXFN220N20X3 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 128ns
Gate charge: 204nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 128ns
Gate charge: 204nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
2+ | 36.64 EUR |
30+ | 35.24 EUR |
IXFN230N20T |
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Hersteller: IXYS
IXFN230N20T Transistor modules MOSFET
IXFN230N20T Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN240N15T2 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 460nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 460nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
2+ | 35.75 EUR |
IXFN240N25X3 |
Hersteller: IXYS
IXFN240N25X3 Transistor modules MOSFET
IXFN240N25X3 Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN24N100 | ![]() |
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Hersteller: IXYS
IXFN24N100 Transistor modules MOSFET
IXFN24N100 Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN26N100P |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 390mΩ
Pulsed drain current: 65A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 197nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 390mΩ
Pulsed drain current: 65A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 197nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 38.08 EUR |
3+ | 38.07 EUR |
IXFN26N120P |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.5Ω
Pulsed drain current: 60A
Power dissipation: 695W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 255nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.5Ω
Pulsed drain current: 60A
Power dissipation: 695W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 255nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 39.27 EUR |
IXFN27N120SK |
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 21.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 160nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 21.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 160nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN300N10P |
Hersteller: IXYS
IXFN300N10P Transistor modules MOSFET
IXFN300N10P Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN300N20X3 |
Hersteller: IXYS
IXFN300N20X3 Transistor modules MOSFET
IXFN300N20X3 Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN30N120P |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Case: SOT227B
On-state resistance: 0.35Ω
Gate charge: 310nC
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Reverse recovery time: 300ns
Kind of channel: enhancement
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Case: SOT227B
On-state resistance: 0.35Ω
Gate charge: 310nC
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Reverse recovery time: 300ns
Kind of channel: enhancement
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN320N17T2 |
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Hersteller: IXYS
IXFN320N17T2 Transistor modules MOSFET
IXFN320N17T2 Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN32N100P |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 27A
Pulsed drain current: 75A
Power dissipation: 690W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 225nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 27A
Pulsed drain current: 75A
Power dissipation: 690W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 225nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN32N100Q3 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 28A
Pulsed drain current: 96A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 195nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 28A
Pulsed drain current: 96A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 195nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN32N120P |
Hersteller: IXYS
IXFN32N120P Transistor modules MOSFET
IXFN32N120P Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN32N80P |
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Hersteller: IXYS
IXFN32N80P Transistor modules MOSFET
IXFN32N80P Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN340N07 |
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Hersteller: IXYS
IXFN340N07 Transistor modules MOSFET
IXFN340N07 Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN360N10T |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Pulsed drain current: 900A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.6mΩ
Gate charge: 525nC
Kind of channel: enhancement
Electrical mounting: screw
Technology: GigaMOS™; HiPerFET™
Reverse recovery time: 130ns
Semiconductor structure: single transistor
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Pulsed drain current: 900A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.6mΩ
Gate charge: 525nC
Kind of channel: enhancement
Electrical mounting: screw
Technology: GigaMOS™; HiPerFET™
Reverse recovery time: 130ns
Semiconductor structure: single transistor
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 243 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 28.03 EUR |
100+ | 27.86 EUR |
IXFN360N15T2 |
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Hersteller: IXYS
IXFN360N15T2 Transistor modules MOSFET
IXFN360N15T2 Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN36N100 | ![]() |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 36A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.24Ω
Pulsed drain current: 144A
Power dissipation: 694W
Technology: HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 180ns
Gate charge: 380nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 36A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.24Ω
Pulsed drain current: 144A
Power dissipation: 694W
Technology: HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 180ns
Gate charge: 380nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 88.72 EUR |
IXFN38N100P |
Hersteller: IXYS
IXFN38N100P Transistor modules MOSFET
IXFN38N100P Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN400N15X3 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 400A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 400A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.5mΩ
Pulsed drain current: 900A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 132ns
Gate charge: 365nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 400A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 400A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.5mΩ
Pulsed drain current: 900A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 132ns
Gate charge: 365nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 52.51 EUR |
IXFN40N110P |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 34A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 300ns
Gate charge: 310nC
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 34A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 300ns
Gate charge: 310nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
IXFN40N110Q3 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 35A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 434ns
Gate charge: 300nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 35A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 434ns
Gate charge: 300nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
IXFN40N90P |
Hersteller: IXYS
IXFN40N90P Transistor modules MOSFET
IXFN40N90P Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN420N10T |
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Hersteller: IXYS
IXFN420N10T Transistor modules MOSFET
IXFN420N10T Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN44N100P |
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Hersteller: IXYS
IXFN44N100P Transistor modules MOSFET
IXFN44N100P Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN44N100Q3 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 38A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 264nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 38A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 264nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.53 EUR |
300+ | 68.78 EUR |
IXFN44N80P | ![]() |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 39A
Pulsed drain current: 100A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Gate charge: 200nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Reverse recovery time: 250ns
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 39A
Pulsed drain current: 100A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Gate charge: 200nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Reverse recovery time: 250ns
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 37.39 EUR |
3+ | 35.35 EUR |
IXFN44N80Q3 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Reverse recovery time: 300ns
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Reverse recovery time: 300ns
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN48N60P | ![]() |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; Idm: 110A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 625W
Case: SOT227B
On-state resistance: 0.14Ω
Gate charge: 150nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Pulsed drain current: 110A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; PolarHV™
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; Idm: 110A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 625W
Case: SOT227B
On-state resistance: 0.14Ω
Gate charge: 150nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Pulsed drain current: 110A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: HiPerFET™; PolarHV™
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN50N120SIC |
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Hersteller: IXYS
IXFN50N120SIC Transistor modules MOSFET
IXFN50N120SIC Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IXFN50N120SK |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Reverse recovery time: 54ns
Features of semiconductor devices: Kelvin terminal
Gate charge: 115nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Reverse recovery time: 54ns
Features of semiconductor devices: Kelvin terminal
Gate charge: 115nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 90.86 EUR |
IXFN520N075T2 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 75V
Drain current: 480A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.9mΩ
Pulsed drain current: 1.5kA
Power dissipation: 940W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate charge: 545nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 75V
Drain current: 480A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.9mΩ
Pulsed drain current: 1.5kA
Power dissipation: 940W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate charge: 545nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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IXFN52N100X |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Pulsed drain current: 100A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Pulsed drain current: 100A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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IXFN52N90P |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±40V
Pulsed drain current: 104A
Type of semiconductor module: MOSFET transistor
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 43A
On-state resistance: 0.16Ω
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±40V
Pulsed drain current: 104A
Type of semiconductor module: MOSFET transistor
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 43A
On-state resistance: 0.16Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH