IXGR55N120A3H1 IXYS
Hersteller: IXYS
Description: IGBT PT 1200V 70A ISOPLUS247
Gate Charge: 185 nC
Test Condition: 960V, 55A, 3Ohm, 15V
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Td (on/off) @ 25°C: 23ns/365ns
IGBT Type: PT
Supplier Device Package: ISOPLUS247™
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 55A
Reverse Recovery Time (trr): 200 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 200 W
Current - Collector Pulsed (Icm): 330 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
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Technische Details IXGR55N120A3H1 IXYS
Description: IGBT PT 1200V 70A ISOPLUS247, Gate Charge: 185 nC, Test Condition: 960V, 55A, 3Ohm, 15V, Switching Energy: 5.1mJ (on), 13.3mJ (off), Td (on/off) @ 25°C: 23ns/365ns, IGBT Type: PT, Supplier Device Package: ISOPLUS247™, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 55A, Reverse Recovery Time (trr): 200 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Power - Max: 200 W, Current - Collector Pulsed (Icm): 330 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 70 A, Part Status: Active.
Weitere Produktangebote IXGR55N120A3H1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXGR55N120A3H1 | Hersteller : IXYS |
 IGBTs High Frequency Range 40khz C-IGBT w/Diode |
Produkt ist nicht verfügbar |
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IXGR55N120A3H1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 200W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 330A Mounting: THT Gate charge: 185nC Kind of package: tube Turn-on time: 70ns Turn-off time: 1253ns |
Produkt ist nicht verfügbar |