IXFP8N65X2 IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 105ns
| Anzahl | Preis |
|---|---|
| 23+ | 3.13 EUR |
| 26+ | 2.77 EUR |
| 29+ | 2.5 EUR |
| 50+ | 2.46 EUR |
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Technische Details IXFP8N65X2 IXYS
Description: MOSFET N-CH 650V 8A TO220, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IXFP8N65X2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFP8N65X2 | Hersteller : IXYS |
Description: MOSFET N-CH 650V 8A TO220 Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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IXFP8N65X2 | Hersteller : IXYS |
MOSFETs 650V/8A TO-220 |
Produkt ist nicht verfügbar |