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IXFP8N65X2

IXFP8N65X2 IXYS

IXF_8N65X2.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Drain-source voltage: 650V
Drain current: 8A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 0.45Ω
Power dissipation: 150W
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 11nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Reverse recovery time: 105ns
Mounting: THT
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Technische Details IXFP8N65X2 IXYS

Description: MOSFET N-CH 650V 8A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V.

Weitere Produktangebote IXFP8N65X2

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IXFP8N65X2 IXFP8N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_8n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 300 Stücke
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IXFP8N65X2 IXFP8N65X2 IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Ultra_Junction_IXF_8N65X2_Datasheet.PDF MOSFETs 650V/8A TO-220
Produkt ist nicht verfügbar
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IXFP8N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_8n65x2_datasheet.pdf.pdf
IXFP8N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXFP8N65X2 Littelfuse_Discrete_MOSFETs_N_Channel_Ultra_Junction_IXF_8N65X2_Datasheet.PDF
IXFP8N65X2
Hersteller: IXYS
MOSFETs 650V/8A TO-220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH