IXGX72N60C3H1 IXYS
Hersteller: IXYSDescription: IGBT PT 600V 75A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/77ns
Switching Energy: 1.03mJ (on), 480µJ (off)
Test Condition: 480V, 50A, 2Ohm, 15V
Gate Charge: 174 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 540 W
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Technische Details IXGX72N60C3H1 IXYS
Description: IGBT PT 600V 75A PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 27ns/77ns, Switching Energy: 1.03mJ (on), 480µJ (off), Test Condition: 480V, 50A, 2Ohm, 15V, Gate Charge: 174 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 360 A, Power - Max: 540 W.
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IXGX72N60C3H1 | Hersteller : IXYS |
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IXGX72N60C3H1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™ Type of transistor: IGBT Power dissipation: 540W Case: PLUS247™ Mounting: THT Gate charge: 174nC Kind of package: tube Collector-emitter voltage: 600V Technology: GenX3™; PT Turn-on time: 62ns Turn-off time: 244ns Gate-emitter voltage: ±20V Collector current: 72A Pulsed collector current: 360A |
Produkt ist nicht verfügbar |