IXTH80N075L2 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 75V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 2+ | 14.89 EUR |
| 30+ | 8.81 EUR |
| 120+ | 7.48 EUR |
| 510+ | 6.86 EUR |
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Technische Details IXTH80N075L2 IXYS
Description: MOSFET N-CH 75V 80A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V, Power Dissipation (Max): 357W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V.
Weitere Produktangebote IXTH80N075L2 nach Preis ab 9.82 EUR bis 17.46 EUR
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IXTH80N075L2 | Hersteller : IXYS |
MOSFETs TO247 N-CH 75V 80A |
auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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