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IXFR24N90P

IXFR24N90P IXYS


IXFR24N90P.pdf Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; 230W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Power dissipation: 230W
Case: ISOPLUS247™
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
3+23.84 EUR
Mindestbestellmenge: 3
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Technische Details IXFR24N90P IXYS

Description: MOSFET N-CH 900V 13A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 460mOhm @ 12A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: ISOPLUS247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V.

Weitere Produktangebote IXFR24N90P nach Preis ab 23.84 EUR bis 23.84 EUR

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IXFR24N90P IXFR24N90P Hersteller : IXYS IXFR24N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; 230W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Power dissipation: 230W
Case: ISOPLUS247™
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3+23.84 EUR
Mindestbestellmenge: 3
IXFR24N90P IXFR24N90P Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr24n90p_datasheet.pdf.pdf Description: MOSFET N-CH 900V 13A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 12A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Produkt ist nicht verfügbar
IXFR24N90P IXFR24N90P Hersteller : IXYS media-3322932.pdf MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Produkt ist nicht verfügbar