IXFX44N80P IXYS
Hersteller: IXYS
Description: MOSFET N-CH 800V 44A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 22A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 1+ | 36.13 EUR |
| 30+ | 22.91 EUR |
| 120+ | 20.03 EUR |
| 510+ | 19.65 EUR |
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Technische Details IXFX44N80P IXYS
Description: MOSFET N-CH 800V 44A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 22A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V.
Weitere Produktangebote IXFX44N80P nach Preis ab 27.28 EUR bis 40.29 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFX44N80P | Hersteller : IXYS |
MOSFETs 44 Amps 800V |
auf Bestellung 170 Stücke: Lieferzeit 10-14 Tag (e) |
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