IXFX98N50P3 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 23.22 EUR |
| 5+ | 15.63 EUR |
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Technische Details IXFX98N50P3 IXYS
Description: MOSFET N-CH 500V 98A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 98A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V, Power Dissipation (Max): 1300W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V.
Weitere Produktangebote IXFX98N50P3 nach Preis ab 15.63 EUR bis 31.37 EUR
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IXFX98N50P3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 98A Power dissipation: 1.3kW Case: PLUS247™ On-state resistance: 50mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFX98N50P3 | Hersteller : IXYS |
MOSFETs 500V 98A 0.05Ohm PolarP3 Power MOSFET |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFX98N50P3 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 500V 98A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V Power Dissipation (Max): 1300W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V |
auf Bestellung 304 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFX98N50P3 | Hersteller : Ixys Corporation |
Trans MOSFET N-CH 500V 98A 3-Pin(3+Tab) PLUS 247 |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFX98N50P3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 98A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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IXFX98N50P3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 98A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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IXFX98N50P3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 98A 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |